JP2004158564A5 - - Google Patents

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Publication number
JP2004158564A5
JP2004158564A5 JP2002321619A JP2002321619A JP2004158564A5 JP 2004158564 A5 JP2004158564 A5 JP 2004158564A5 JP 2002321619 A JP2002321619 A JP 2002321619A JP 2002321619 A JP2002321619 A JP 2002321619A JP 2004158564 A5 JP2004158564 A5 JP 2004158564A5
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JP
Japan
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JP2002321619A
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JP2004158564A (ja
JP4387091B2 (ja
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Priority to JP2002321619A priority Critical patent/JP4387091B2/ja
Priority claimed from JP2002321619A external-priority patent/JP4387091B2/ja
Priority to US10/700,571 priority patent/US7504325B2/en
Publication of JP2004158564A publication Critical patent/JP2004158564A/ja
Publication of JP2004158564A5 publication Critical patent/JP2004158564A5/ja
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Publication of JP4387091B2 publication Critical patent/JP4387091B2/ja
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Expired - Fee Related legal-status Critical Current

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JP2002321619A 2002-11-05 2002-11-05 薄膜トランジスタの作製方法 Expired - Fee Related JP4387091B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002321619A JP4387091B2 (ja) 2002-11-05 2002-11-05 薄膜トランジスタの作製方法
US10/700,571 US7504325B2 (en) 2002-11-05 2003-11-05 Laser doping processing method and method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002321619A JP4387091B2 (ja) 2002-11-05 2002-11-05 薄膜トランジスタの作製方法

Publications (3)

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JP2004158564A JP2004158564A (ja) 2004-06-03
JP2004158564A5 true JP2004158564A5 (ja) 2005-12-15
JP4387091B2 JP4387091B2 (ja) 2009-12-16

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JP2002321619A Expired - Fee Related JP4387091B2 (ja) 2002-11-05 2002-11-05 薄膜トランジスタの作製方法

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US (1) US7504325B2 (ja)
JP (1) JP4387091B2 (ja)

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WO2007085452A1 (de) 2006-01-25 2007-08-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und vorrichtung zur präzisionsbearbeitung von substraten mittels eines in einen flüssigkeitsstrahl eingekoppelten laser und dessen verwendung
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KR101893331B1 (ko) * 2009-09-17 2018-08-30 사이오닉스, 엘엘씨 감광성 이미징 장치 및 이와 관련된 방법
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US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
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US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
JP5742119B2 (ja) * 2010-06-15 2015-07-01 株式会社Ihi 磁性半導体用基板、磁性半導体用基板の製造方法及び磁性半導体用基板の製造装置
US20120146172A1 (en) 2010-06-18 2012-06-14 Sionyx, Inc. High Speed Photosensitive Devices and Associated Methods
DE102010037355A1 (de) * 2010-09-06 2012-03-08 Schott Solar Ag Kristalline Solarzelle und Verfahren zur Herstellung einer solchen
KR20140014121A (ko) 2010-12-21 2014-02-05 사이오닉스, 아이엔씨. 기판 손상을 감소시키는 반도체 소자 및 관련 방법
KR102025522B1 (ko) 2011-03-10 2019-11-26 사이오닉스, 엘엘씨 3차원 센서, 시스템, 및 관련 방법
DE102011006624A1 (de) * 2011-04-01 2012-10-04 Robert Bosch Gmbh Verfahren zur Herstellung einer Solarzelle
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US20130016203A1 (en) 2011-07-13 2013-01-17 Saylor Stephen D Biometric imaging devices and associated methods
KR20130017312A (ko) * 2011-08-10 2013-02-20 삼성디스플레이 주식회사 표시 장치
US8865507B2 (en) 2011-09-16 2014-10-21 Sionyx, Inc. Integrated visible and infrared imager devices and associated methods
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
JP6466346B2 (ja) 2013-02-15 2019-02-06 サイオニクス、エルエルシー アンチブルーミング特性を有するハイダイナミックレンジｃｍｏｓ画像センサおよび関連づけられた方法
WO2014151093A1 (en) 2013-03-15 2014-09-25 Sionyx, Inc. Three dimensional imaging utilizing stacked imager devices and associated methods
JP2015010017A (ja) * 2013-06-28 2015-01-19 独立行政法人国立高等専門学校機構 レーザを用いたドーピング方法
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
KR102308905B1 (ko) * 2014-11-21 2021-10-06 삼성디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터의 제조 방법 및 박막 트랜지스터를 구비한 유기 발광 표시 장치
WO2016151723A1 (ja) * 2015-03-23 2016-09-29 国立大学法人九州大学 レーザドーピング装置及びレーザドーピング方法
US9972492B2 (en) * 2015-03-26 2018-05-15 Electronics And Telecommunications Research Institute Method of doping substrate
KR102521976B1 (ko) * 2015-03-26 2023-04-17 한국전자통신연구원 기판 도핑 방법
US9805931B2 (en) * 2015-08-28 2017-10-31 Varian Semiconductor Equipment Associates, Inc. Liquid immersion doping
JPWO2017163356A1 (ja) * 2016-03-24 2019-01-31 国立大学法人九州大学 レーザドーピング装置及び半導体装置の製造方法
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CN108899267B (zh) * 2018-06-22 2020-07-24 华中科技大学 一种金属掺杂二硫化钼薄膜的制备方法
CN111128722A (zh) * 2019-12-06 2020-05-08 华南理工大学 一种退火掺杂实现常关型hemt器件的方法

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