JP2004153260A5 - - Google Patents

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Publication number
JP2004153260A5
JP2004153260A5 JP2003350431A JP2003350431A JP2004153260A5 JP 2004153260 A5 JP2004153260 A5 JP 2004153260A5 JP 2003350431 A JP2003350431 A JP 2003350431A JP 2003350431 A JP2003350431 A JP 2003350431A JP 2004153260 A5 JP2004153260 A5 JP 2004153260A5
Authority
JP
Japan
Prior art keywords
via hole
forming
semiconductor
pad electrode
columnar terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003350431A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004153260A (ja
JP4511148B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003350431A priority Critical patent/JP4511148B2/ja
Priority claimed from JP2003350431A external-priority patent/JP4511148B2/ja
Publication of JP2004153260A publication Critical patent/JP2004153260A/ja
Publication of JP2004153260A5 publication Critical patent/JP2004153260A5/ja
Application granted granted Critical
Publication of JP4511148B2 publication Critical patent/JP4511148B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003350431A 2002-10-11 2003-10-09 半導体装置の製造方法 Expired - Fee Related JP4511148B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003350431A JP4511148B2 (ja) 2002-10-11 2003-10-09 半導体装置の製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002298890 2002-10-11
JP2002298889 2002-10-11
JP2002298888 2002-10-11
JP2003350431A JP4511148B2 (ja) 2002-10-11 2003-10-09 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2004153260A JP2004153260A (ja) 2004-05-27
JP2004153260A5 true JP2004153260A5 (hu) 2006-11-16
JP4511148B2 JP4511148B2 (ja) 2010-07-28

Family

ID=32475624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003350431A Expired - Fee Related JP4511148B2 (ja) 2002-10-11 2003-10-09 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP4511148B2 (hu)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005235860A (ja) 2004-02-17 2005-09-02 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4376715B2 (ja) * 2004-07-16 2009-12-02 三洋電機株式会社 半導体装置の製造方法
KR20060087273A (ko) 2005-01-28 2006-08-02 삼성전기주식회사 반도체 패키지및 그 제조방법
KR100616670B1 (ko) 2005-02-01 2006-08-28 삼성전기주식회사 웨이퍼 레벨의 이미지 센서 모듈 및 그 제조방법
JP5361156B2 (ja) * 2007-08-06 2013-12-04 ラピスセミコンダクタ株式会社 半導体装置及びその製造方法
JP5258735B2 (ja) * 2009-11-13 2013-08-07 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
US8384225B2 (en) * 2010-11-12 2013-02-26 Xilinx, Inc. Through silicon via with improved reliability
JP5876893B2 (ja) * 2014-04-02 2016-03-02 ラピスセミコンダクタ株式会社 半導体装置及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3713418B2 (ja) * 2000-05-30 2005-11-09 光正 小柳 ３次元画像処理装置の製造方法
JP2001351997A (ja) * 2000-06-09 2001-12-21 Canon Inc 受光センサーの実装構造体およびその使用方法
JP2002094082A (ja) * 2000-07-11 2002-03-29 Seiko Epson Corp 光素子及びその製造方法並びに電子機器

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