JP2004130309A - Coating method and coating device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To form a flat coating film with a smooth surface on a substrate to be treated. <P>SOLUTION: In this resist coating, an ultrasonic irradiation part 160 immediately after a resist nozzle 154 on the switched-on state is transferred together with the resist nozzle 154 while ultrasonic waves being applied toward the vicinity of a boundary E between band-shaped resist liquid films R(1) and R(2) in the second-time and onward Y-direction scannings. Since the resist liquid is reduced in viscosity or fluidized in the vicinity of boundary between both the band-shaped resist liquid films R(1) and R(2) by the ultrasonic irradiation-scanning of the ultrasonic irradiation part 160, the surfaces of the two liquid films are made uniformly smooth in a direction (horizontal direction) parallel to the substrate surface to remove unevenness. <P>COPYRIGHT: (C)2004,JPO

Description

The present invention relates to a technique for forming a coating film by applying a liquid on a substrate to be processed.

Recently, in a lithography process in an LCD manufacturing process, as a resist coating method that is advantageous for increasing the size of a substrate to be processed (glass substrate), a resist liquid is moved in a relatively linear manner or scanned over a substrate to form a thin linear liquid. A technique (spinless method) in which a resist solution is applied to a substrate with a desired film thickness without requiring high-speed rotation by continuously ejecting the resist solution is widely used.

The resist nozzle used in the spinless method has a discharge port having a very small diameter (for example, about 100 μm), and is configured to discharge the resist liquid at a considerably high pressure. In order to increase the coating efficiency, a large number of discharge ports are arranged in a line, or the discharge ports are formed in a slit shape. Fabrication is difficult at present. For this reason, by a nozzle scan that traverses the substrate a number of times at a constant pitch, a linear or band-like resist liquid film formed on the substrate per scan is scanned in the line width or the band width direction by the number of scans. By joining together, one surface of the resist liquid film is formed on the substrate.

However, in the spinless method or the nozzle scanning method as described above, a non-flat portion, that is, an unevenness (unevenness) occurs near or at a boundary between adjacent linear or belt-like resist liquid films on a substrate, and the unevenness is generated at the boundary. However, there is a problem that the stripes extend along the line, resulting in streak-like coating unevenness, and lowering the resolution of photolithography.

The present invention has been made in view of the problems of the related art, and a coating method and a coating method that forms a flat coating film without streaky coating unevenness on a substrate to be processed by a spinless method or a nozzle scanning method and An object is to provide a coating device.

Another object of the present invention is to provide a coating method and a coating apparatus for forming a flat coating film without unevenness on a substrate to be processed.

In order to achieve the above object, a first coating method according to the present invention includes a nozzle that discharges a predetermined coating liquid onto a substantially horizontally supported substrate in a first direction within a horizontal plane. A first step of scanning in a second direction orthogonal to the first direction at an interval, and applying the coating liquid on the substrate in a linear or band form for each scan; and And a second step of locally applying energy to the vicinity of the boundary between the adjacent linear or belt-shaped coating liquid films to flatten the liquid film.

Further, a first coating apparatus of the present invention includes a nozzle for supplying a predetermined coating liquid toward a substrate to be processed supported substantially horizontally, and a first nozzle for the substrate in a horizontal plane with respect to the substrate. First scanning means for scanning in a second direction orthogonal to the first direction at predetermined intervals in the direction, and locally near a boundary between adjacent linear or band-shaped coating liquid films on the substrate. Flattening means for applying energy to flatten the liquid film.

In the present invention, in the first step, when the coating liquid is applied on the substrate in a linear or band shape at a predetermined interval or pitch (by the first scanning means), the adjacent linear or band-shaped coating liquid films are formed. Irregularities (uneven portions) occur at boundaries or seams. However, in the second step, energy is locally applied to the vicinity of the boundary of the linear or band-shaped coating liquid film on such a substrate (by the planarization means), so that the coating liquid in the vicinity decreases the viscosity and It is fluidized, the surface of the liquid film is leveled and irregularities are removed.

In the present invention, one preferred form of locally applying energy near the boundary of the linear or band-shaped coating liquid film on the substrate is a method of applying ultrasonic waves near the boundary of the linear or band-shaped coating liquid film on the substrate. is there. In terms of an apparatus, the flattening means may have an ultrasonic wave emitting means for emitting ultrasonic waves. In this case, it is preferable to irradiate the ultrasonic wave toward the vicinity of the boundary of the linear or band-shaped coating liquid film from a direction obliquely inclined from above the boundary. By this oblique irradiation, the ultrasonic wave can be applied to the slope of the uneven ridge formed near the boundary of the linear or band-shaped coating liquid film from the vertical direction or a direction close thereto, and the efficiency of flattening can be increased. As another preferred embodiment, a method of irradiating heating light near the boundary of a linear or band-shaped liquid film on a substrate is also effective. In terms of the apparatus, the flattening means may have a light emitting means for emitting light for heating.

局 所 The local energy to the vicinity of each linear or band-shaped coating liquid film boundary may be preferably applied while scanning in the second direction. In this case, in terms of the apparatus, the flattening unit may perform the scanning movement together with the nozzle by the first scanning unit, or may perform the scanning movement by the second scanning unit independent of the first scanning unit. Is also good. As another method, energy for the vicinity of the boundary of the linear or band-shaped coating liquid film on the substrate may be applied simultaneously and collectively in the second direction. This method is advantageous when the planarizing means uses light emitting means.

第 The second coating method of the present invention includes a first step of applying a coating liquid to a surface to be processed of a substrate to be processed, and a second step of irradiating a coating liquid film on the substrate with ultrasonic waves. Further, the second coating apparatus of the present invention has a coating means for coating a coating surface on a processing surface of a substrate to be processed, and an ultrasonic irradiation unit for irradiating the coating liquid film on the substrate with ultrasonic waves.

In the second coating method or the second coating method, even if the coating liquid film is roughened when the coating liquid is coated on the substrate (by the coating means) in the first step, the second step (ultrasonic wave) The application of ultrasonic energy to the unevenness of the coating liquid film (by the irradiation unit) lowers the viscosity of the coating liquid in the vicinity thereof and fluidizes the liquid film, leveling the liquid film surface, and removing the unevenness. It is effective to irradiate the ultrasonic waves to the ridges in the unevenness of such a coating liquid film, and more preferably, to irradiate the ultrasonic waves from a direction obliquely inclined from above the ridge vertically toward the slope of the ridge. May be irradiated.

In addition, since the ultrasonic wave is easily attenuated in the air, the position where the ultrasonic irradiation unit emits the ultrasonic wave is set within a range of 1 mm to 5 mm from the surface of the coating liquid film in order to effectively use the ultrasonic energy. Is preferred.

As a preferred embodiment, the ultrasonic irradiation section includes a vibrator that generates ultrasonic waves, and an ultrasonic horn that emits ultrasonic waves from the vibrator toward the coating liquid film on the substrate into the atmosphere. Further, it is also possible to arrange a plurality of ultrasonic irradiation units in parallel toward the substrate and simultaneously or simultaneously irradiate ultrasonic waves distributed on the line from the plurality of ultrasonic irradiation units. Either a single type or a line type ultrasonic irradiation unit can be moved relative to the substrate by a moving mechanism in order to scan the ultrasonic irradiation position on the substrate.

As a preferred embodiment, the second coating apparatus may include a holding unit that holds the substrate, and a resonance member provided on the holding unit and that resonates with ultrasonic waves from the ultrasonic irradiation unit. The resonance member may be preferably arranged at a position facing the ultrasonic irradiation body with the substrate interposed therebetween. In such a configuration, not only the ultrasonic wave from the ultrasonic irradiation unit is applied to the coating liquid film (particularly, the unevenness) on the substrate, but also the secondary ultrasonic wave reflected by the resonance member is applied. Thus, the flattening of the coating liquid film and the utilization efficiency of the ultrasonic energy can be further improved.

As a preferred embodiment, a vibration amplitude detecting section for detecting a vibration amplitude of the resonance member, and a distance between the substrate and the ultrasonic irradiation body is variably adjusted according to the vibration amplitude of the resonance member detected by the vibration amplitude detection section. An interval adjuster can be provided. Alternatively, a frequency detector for detecting the frequency of the resonance member, and an interval adjuster for variably adjusting the distance between the substrate and the ultrasonic irradiation body according to the frequency of the resonance member detected by the frequency detector. Can be provided. In such a configuration, the resonance member can be reliably vibrated in a resonance state by automatic control according to the vibration characteristics of the resonance member.

As another preferred embodiment, a vibration amplitude detection unit that detects the vibration amplitude of the resonance member, and varies the frequency of the ultrasonic wave emitted from the ultrasonic irradiation body according to the vibration amplitude of the resonance member detected by the vibration amplitude detection unit And a frequency adjustment unit for adjustment. Alternatively, a frequency detector for detecting the frequency of the resonance member, and frequency adjustment for variably adjusting the frequency of the ultrasonic wave emitted from the ultrasonic irradiation body according to the frequency of the resonance member detected by the frequency detector. Part can be provided. Also in such a configuration, the resonance member can be reliably vibrated in a resonance state by automatic control according to the vibration characteristics of the resonance member.

According to the coating method or the coating apparatus of the present invention, a flat coating film without any unevenness can be formed on the substrate to be processed by the above configuration and operation. In particular, a flat coating film without streak-like coating unevenness can be formed on a substrate to be processed by a spinless method or a nozzle scanning method.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

FIG. 1 shows a coating and developing system as one configuration example to which the coating method and the coating apparatus of the present invention can be applied. The coating and developing system 10 is installed in a clean room, for example, using an LCD substrate as a substrate to be processed, and performs various processes such as cleaning, resist coating, pre-baking, developing and post-baking in a photolithography process in an LCD manufacturing process. Things. The exposure processing is performed by an external exposure apparatus 12 installed adjacent to this system.

In this coating and developing system 10, a horizontally long process station (P / S) 16 is disposed at the center, and a cassette station (C / S) 14 and an interface station (I / F) are provided at both ends in the longitudinal direction (X direction). ) 18 are arranged.

The cassette station (C / S) 14 is a cassette loading / unloading port of the system 10, and can mount up to four cassettes C capable of accommodating a plurality of substrates G in a horizontal direction, for example, in the Y direction so that the substrates G are stacked in multiple stages. A cassette stage 20 and a transport mechanism 22 for taking the substrate G in and out of the cassette C on the stage 20. The transfer mechanism 22 has a unit capable of holding the substrate G, for example, a transfer arm 22a, is operable in four axes of X, Y, Z, and θ, and is located between the adjacent process station (P / S) 16 and the substrate G. It can be handed over.

The process station (P / S) 16 arranges each processing unit on a pair of parallel and opposite lines A and B extending in the system longitudinal direction (X direction) in the order of process flow or process. More specifically, an upstream process line A from the cassette station (C / S) 14 to the interface station (I / F) 18 has a cleaning process unit 24, a first thermal processing unit 26, , A coating process unit 28 and a second thermal processing unit 30 are arranged in a horizontal row. On the other hand, a process line B downstream from the interface station (I / F) 18 to the cassette station (C / S) 14 includes a second thermal processing unit 30, a developing process unit 32, and a decolorizing process. The section 34 and the third thermal processing section 36 are arranged in a horizontal row. In this line configuration, the second thermal processing unit 30 is located at the end of the upstream process line A and at the head of the downstream process line B, and straddles between both lines A and B. ing.

An auxiliary transfer space 38 is provided between the process lines A and B, and a shuttle 40 capable of horizontally mounting the substrates G one by one is bidirectionally driven in a line direction (X direction) by a drive mechanism (not shown). You can move to.

In the upstream process line A, the cleaning process section 24 includes a scrubber cleaning unit (SCR) 42, and an excimer is located in a location adjacent to the cassette station (C / S) 10 in the scrubber cleaning unit (SCR) 42. A UV irradiation unit (e-UV) 41 is provided. The cleaning unit in the scrubber cleaning unit (SCR) 42 performs brushing cleaning and blow cleaning on the upper surface (the surface to be processed) of the substrate G while transporting the LCD substrate G in the horizontal direction in the line A direction by roller transportation or belt transportation. It has become.

The first thermal processing unit 26 adjacent to the downstream side of the cleaning process unit 24 is provided with a vertical transport mechanism 46 at the center along the process line A, and a plurality of units are stacked and arranged in multiple stages on both front and rear sides thereof. are doing. For example, as shown in FIG. 2, a pass unit (PASS) 50 for transferring a substrate, heating units (DHP) 52 and 54 for dehydration baking, and an add The fusion unit (AD) 56 is stacked. Here, the pass unit (PASS) 50 provides a space for transferring the substrate G to and from the scrubber cleaning unit (SCR) 42 side. In the downstream multi-stage unit (TB) 48, a pass unit (PASS) 60 for transferring substrates, cooling units (CL) 62 and 64, and an adhesion unit (AD) 66 are stacked in order from the bottom. Here, the pass unit (PASS) 60 provides a space for transferring the substrate G to and from the coating processing unit 28 side.

As shown in FIG. 2, the transport mechanism 46 includes a vertically movable body 70 that can move up and down along a guide rail 68 that extends in a vertical direction, and a swing that can rotate or rotate in the θ direction on the vertically movable body 70. It has a transfer body 72 and a transfer arm or tweezers 74 that can move forward and backward or extend and contract in the front-rear direction while supporting the substrate G on the turning transfer body 72. A driving unit 76 for vertically moving the elevating carrier 70 is provided on the base end side of the vertical guide rail 68, and a driving unit 78 for rotating and driving the swiveling carrier 72 is attached to the elevating carrier 70. A driving unit 80 for driving the reciprocation 74 is attached to the rotary conveyance body 72. Each of the driving units 76, 78, 80 may be constituted by, for example, an electric motor or the like.

The transport mechanism 46 configured as described above can access any units in the multi-stage unit (TB) 44, 48 on both sides by moving up and down or turning at high speed, and the shuttle on the auxiliary transport space 38 side. In both cases, the substrate G can be transferred.

As shown in FIG. 1, the coating processing unit 28 adjacent to the downstream side of the first thermal processing unit 26 includes a resist coating unit (CT) 82, a reduced-pressure drying unit (VD) 84, and an edge remover unit (ER). 86 are arranged in a line along the process line A. Although not shown, a transport device for loading / unloading the substrates G one by one into the three units (CT) 82, (VD) 84, and (ER) 86 in the process order is provided in the coating process unit 28. In each of the units (CT) 82, (VD) 84, and (ER) 86, each processing is performed for each substrate.

The second thermal processing unit 30 adjacent to the downstream side of the coating process unit 28 has the same configuration as the first thermal processing unit 26, and has a vertical type between both process lines A and B. , A multi-stage unit (TB) 88 is provided on the process line A side (last tail), and the other multi-stage unit (TB) 92 is provided on the process line B side (head).

Although not shown, for example, in the multi-stage unit (TB) 88 on the process line A side, a pass unit (PASS) for transferring a substrate is placed at the lowest stage, and a heating unit (PREBAKE) for pre-baking is placed thereon. For example, three layers may be stacked. In the multi-stage unit (TB) 92 on the process line B side, a pass unit (PASS) for transferring a substrate is placed at the lowest stage, and a cooling unit (COL) is stacked, for example, on one stage. A heating unit (PREBAKE) for pre-baking may be stacked, for example, in two stages.

The transport mechanism 90 in the second thermal processing unit 30 includes one substrate G in the coating process unit 28 and the development process unit 32 via each pass unit (PASS) of both multi-stage unit (TB) 88 and 92. In addition to the transfer of the substrate G in units, the substrate G can be transferred to and from the shuttle 40 in the auxiliary transfer space 38 and the interface station (I / F) 18 described later.

(4) In the downstream process line B, the developing process section 32 includes a so-called flat-flow type developing unit (DEV) 94 for performing a series of developing processing steps while transporting the substrate G in a horizontal posture.

に は A third thermal processing unit 36 is disposed downstream of the developing process unit 32 with the decolorizing process unit 34 interposed therebetween. The decolorization process unit 34 includes an i-ray UV irradiation unit (i-UV) 96 for irradiating the processing surface of the substrate G with i-rays (wavelength 365 nm) to perform the decolorization processing.

The third thermal processing unit 36 has the same configuration as the first thermal processing unit 26 and the second thermal processing unit 30, and has a vertical transfer mechanism 100 along the process line B. And a pair of multi-stage unit portions (TB) 98, 102 on both front and rear sides thereof.

Although not shown, for example, in the multi-stage unit (TB) 98 on the upstream side, a pass unit (PASS) is placed at the lowest stage, and a heating unit (POBAKE) for post-baking is stacked, for example, in three stages. May be. In the multi-stage unit (TB) 102 on the downstream side, a post-baking unit (POBAKE) is placed at the lowest stage, and a pass cooling unit (PASS-COL) for transferring and cooling the substrate is placed on the post-baking unit. The heating units for post-baking (POBAKE) may be stacked in two layers.

The transport mechanism 100 in the third thermal processing unit 36 is connected to the i-line UV irradiation unit (PASS) through the pass unit (PASS) and the pass cooling unit (PASS · COL) of the two multi-stage unit (TB) 98, 102, respectively. Not only can the substrate G be transferred to and from the i-UV) 96 and the cassette station (C / S) 14, but also the substrate G can be transferred to and from the shuttle 40 in the auxiliary transfer space 38 by one sheet. .

The interface station (I / F) 18 has a transfer device 104 for exchanging the substrate G with the adjacent exposure device 12, and a buffer stage (BUF) 106 and an extension cooling stage (EXT · COL) around the transfer device 104. ) 108 and peripheral devices 110 are arranged. The buffer stage (BUF) 1 06 stationary buffer cassette (not shown) is placed. The extension cooling stage (EXT · COL) 108 is a substrate transfer stage having a cooling function, and is used when exchanging the substrate G with the process station (P / S) 16 side. The peripheral device 110 may have a configuration in which, for example, a titler (TITLER) and a peripheral exposure device (EE) are vertically stacked. The transfer device 104 has a unit capable of holding the substrate G, for example, a transfer arm 104a, and exchanges the substrate G with the adjacent exposure device 12, each unit (BUF) 106 , (EXT / COL) 108, (TITLER / EE) 110. Can be performed.

FIG. 3 shows a processing procedure in this coating and developing system. First, in the cassette station (C / S) 14, the transport mechanism 22 takes out one substrate G from the predetermined cassette C on the stage 20 and excimer in the cleaning process section 24 of the process station (P / S) 16. It is carried into the UV irradiation unit (e-UV) 41 (step S1).

The substrate G is subjected to dry cleaning by irradiation with ultraviolet rays in the excimer UV irradiation unit (e-UV) 41 (step S2). This ultraviolet cleaning mainly removes organic substances on the substrate surface. After the end of the ultraviolet cleaning, the substrate G is transferred to a scrubber cleaning unit (SCR) 42 of the cleaning processing unit 24 by roller conveyance or belt conveyance (not shown).

In the scrubber cleaning unit (SCR) 42, as described above, the upper surface (substrate to be processed) of the substrate G is brushed and cleaned while the substrate G is transported in the horizontal direction by the roller transport or belt transport in the horizontal direction in the process line A direction. By cleaning, particulate dirt is removed from the substrate surface (step S3). After the cleaning, the substrate G is rinsed while being transported in a flat flow, and finally, the substrate G is dried using an air knife or the like.

The substrate G that has been cleaned in the scrubber cleaning unit (SCR) 42 is carried into the pass unit (PASS) 50 in the upstream multi-stage unit (TB) 44 of the first thermal processing unit 26.

{Circle around (1)} In the first thermal processing section 26, the substrate G is sequentially transferred to a predetermined unit by a transfer mechanism 46 in a predetermined sequence. For example, the substrate G is first transferred from the pass unit (PASS) 50 to one of the heating units (DHP) 52, 54, where it is subjected to a dehydration process (step S4). Next, the substrate G is moved to one of the cooling units (COL) 62 and 64, where it is cooled to a constant substrate temperature (step S5). Thereafter, the substrate G is transferred to the adhesion unit (AD) 56, where it is subjected to a hydrophobic treatment (step S6). After the completion of the hydrophobic treatment, the substrate G is cooled to a constant substrate temperature by one of the cooling units (COL) 62 and 64 (step S7). Finally, the substrate G is moved to the pass unit (PASS) 60 belonging to the downstream multi-stage unit (TB) 48.

As described above, in the first thermal processing unit 26, the substrate G is transferred between the upstream multi-stage unit (TB) 44 and the downstream multi-stage unit (TB) 48 via the transfer mechanism 46. You can come and go arbitrarily. The same substrate transfer operation can be performed in the second and third thermal processing units 30 and 36.

The substrate G that has undergone the above-described series of thermal or thermal processing in the first thermal processing unit 26 is located on the downstream side of the pass unit (PASS) 60 in the downstream multi-stage unit (TB) 48. Is transferred to the resist coating unit (CT) 82 of the coating process section 28 of FIG.

The substrate G is coated with a resist solution on the upper surface (the surface to be processed) of the substrate by a resist coating unit (CT) 82 by, for example, a spin coating method, and is immediately subjected to a drying process by a reduced pressure drying unit (VD) 84 on the downstream side. Then, an unnecessary (unnecessary) resist on the periphery of the substrate is removed by the edge remover unit (ER) 86 adjacent on the downstream side (step S8).

The substrate G that has been subjected to the above-described resist coating process passes from the edge remover unit (ER) 86 to the pass unit (PASS) belonging to the upstream multi-stage unit (TB) 88 of the adjacent second thermal processing unit 30. Handed over to

{Circle around (2)} In the second thermal processing section 30, the substrate G is sequentially transferred to a predetermined unit by a transfer mechanism 90 in a predetermined sequence. For example, the substrate G is first moved from the pass unit (PASS) to one of the heating units (PREBAKE), where it is baked after resist application (step S9). Next, the substrate G is transferred to one of the cooling units (COL), where it is cooled to a constant substrate temperature (step S10). Thereafter, the substrate G is transferred to the extension cooling stage (EXT.COL) of the interface station (I / F) 18 via the pass unit (PASS) of the downstream multistage unit (TB) 92 or not. ) 108.

At the interface station (I / F) 18, the substrate G is carried from the extension cooling stage (EXT · COL) 108 to the peripheral exposure device (EE) of the peripheral device 110, where the resist adhering to the peripheral portion of the substrate G is removed. After being exposed for removal during development, it is sent to the next exposure device 12 (step S11).

(4) In the exposure device 12, a predetermined circuit pattern is exposed on the resist on the substrate G. When the substrate G that has been subjected to the pattern exposure is returned from the exposure apparatus 12 to the interface station (I / F) 18 (step S11), the substrate G is first carried into a titler (TITLRR) of the peripheral device 110, where a predetermined portion of the substrate is placed. The predetermined information is written in the part (step S12). Thereafter, the substrate G is returned to the extension cooling stage (EXT · COL) 108. The transfer of the substrate G at the interface station (I / F) 18 and the exchange of the substrate G with the exposure device 12 are performed by the transfer device 104.

In the process station (P / S) 16, in the second thermal processing section 30, the transport mechanism 90 receives the exposed substrate G from the extension cooling stage (EXT · COL) 108, and the multi-stage unit section on the process line B side (TB) Transfer to the developing process unit 32 via the pass unit (PASS) in the 92.

(4) In the developing process section 32, the substrate G received from the pass unit (PASS) in the multi-stage unit (TB) 92 is carried into the developing unit (DEV) 94. In the developing unit (DEV) 94, the substrate G is transported downstream of the process line B in a flat flow manner, and a series of development processing steps of development, rinsing, and drying are performed during the transport (step S13).

(4) The substrate G that has been subjected to the development processing in the development processing unit 32 is carried into the decolorization processing unit 34 adjacent on the downstream side, where it is subjected to decolorization processing by i-ray irradiation (step S14). The substrate G that has been subjected to the decolorizing process is transferred to the pass unit (PASS) in the upstream multistage unit (TB) 98 of the third thermal processing unit 36.

{Circle around (3)} In the third thermal processing section (TB) 98, the substrate G is first transferred from the pass unit (PASS) to one of the heating units (POBAKE), where it is subjected to post-baking (step S15). Next, the substrate G is transferred to a pass cooling unit (PASS · COL) in the downstream multi-stage unit (TB) 102, where it is cooled to a predetermined substrate temperature (step S16). The transfer of the substrate G in the third thermal processing section 36 is performed by the transfer mechanism 100.

On the cassette station (C / S) 14 side, the transport mechanism 22 receives and receives the substrate G that has completed all the coating and developing processes from the pass cooling unit (PASS · COL) of the third thermal processing unit 36. The loaded substrate G is stored in one of the cassettes C (step S1).

In the coating and developing system 10, the present invention can be applied to the resist coating unit (CT) 82 of the coating processing unit 28. Hereinafter, an embodiment in which the present invention is applied to a resist coating unit (CT) 82 will be described with reference to FIGS.

FIGS. 4 and 5 show the configuration of the main parts of the resist coating unit (CT) 82, the reduced-pressure drying unit (VD) 84, and the edge remover unit (ER) 86 in the coating processing unit 28.

(4) These coating system processing unit groups (CT) 82, (VD) 84, and (ER) 86 are arranged in a row on the support base 112 in the order of processing steps. The board G can be directly exchanged between the units by one or more sets of transfer arms 116, 116 that move along a pair of guide rails 114, 114 laid on both sides of the support base 112.

The vacuum drying unit (VD) 84 includes a tray or a shallow bottom type lower chamber 118 having an open upper surface, and a lid-like upper chamber configured to be airtightly fitted or fitted to the upper surface of the lower chamber 118. 120. The lower chamber 118 has a substantially rectangular shape, and a stage 122 for horizontally mounting and supporting the substrate G is provided at the center, and exhaust ports 126 are provided at four corners on the bottom surface. An exhaust pipe 128 connected from the bottom of the lower chamber 118 to each exhaust port 126 leads to a vacuum pump (not shown). With the lower chamber 118 covered with the upper chamber 120, the processing space in both chambers 118, 120 can be depressurized to a predetermined degree of vacuum by the vacuum pump.

The edge remover unit (ER) 86 includes a stage 130 for horizontally mounting and supporting the substrate G, alignment means 132 for positioning the substrate G at a pair of opposing corners, and four sides of the substrate G. There are provided four remover heads 134 and the like for removing extra resist from the peripheral portion (edge). While the alignment means 132 positions the substrate G on the stage 130, each remover head 134 moves along each side of the substrate G, and removes excess resist adhering to the peripheral edge of each side of the substrate G with a thinner. It is designed to be dissolved and removed.

The resist coating unit (CT) 82 includes a cup-shaped processing container 136 having an open upper surface, a vertically movable stage 138 for placing and holding the substrate G horizontally in the processing container 136, A vertical drive unit 140 provided below the processing container 136 for raising and lowering the stage 138, and scanning for driving a resist nozzle 154 (FIG. 6) for discharging a resist liquid onto the substrate G on the stage 138 in the XY directions. It has a mechanism 144 and a controller (not shown) for controlling each part.

FIG. 6 shows the configuration of the scanning mechanism 144. In the nozzle scanning mechanism 144, a pair of Y guide rails 146 and 146 extending in the Y direction are arranged on both sides of the processing container 136 (not shown in FIG. 6), and an X direction is provided between the Y guide rails 146 and 146. The X guide rail 148 is extended so as to be movable in the Y direction. The Y-direction driving units 150, 150 arranged at predetermined positions, for example, at one ends of both the Y guide rails 146, 146, move the X guide rail 148 via the transmission mechanism (not shown) such as an endless belt. 146 is driven in the Y direction. In addition, a carriage (transport body) 152 that can move in the X direction along the X guide rail 148 in, for example, a self-propelled manner or an externally driven manner is provided, and a resist nozzle 154 is attached to the carriage 152.

As shown in FIG. 7, the resist nozzle 154 is made of, for example, stainless steel (SUS), and has an introduction passage 154a for introducing the resist solution from the end of the resist solution supply pipe 156, and a buffer for temporarily storing the introduced resist solution. A chamber 154b, one or a plurality of tunnel-type (A) or groove-type (B) nozzle discharge channels 154c extending vertically below the bottom of the buffer chamber 154b, and at the end of each nozzle discharge channel 154c. And a discharge port 154d of a hole type (A) or a slit type (B) provided. The diameter or slit width D of the discharge port 154d is a fine diameter, for example, about 100 μm. As shown in FIG. 6, the resist nozzle 154 is fixedly attached to the carriage 152 with the nozzle longitudinal direction or the ejection port arrangement direction aligned with the X direction.

The ultrasonic irradiation unit 160 is also attached to the carriage 152 via a movable support arm 158. The ultrasonic irradiation section 160 has an ultrasonic oscillator and a high-frequency power supply section for driving the oscillator incorporated in a main body, and has an ultrasonic horn 160a connected to the oscillator at a lower portion of the main body. The ultrasonic waves generated by the vibrator are emitted from the ultrasonic horn 160a toward the substrate G into the atmosphere. The ultrasonic horn 160a is made of a material such as an aluminum alloy or a titanium alloy, and may have a shape such as a conical shape. The attachment or arrangement position of the ultrasonic irradiation unit 160 on the carriage 152 may be set at a position close to one end of the registration nozzle 154, more precisely, one end of the discharge port 154d. In this embodiment, the arm 158 is rotated around a vertical axis by an arm driving mechanism built in the carriage 152 so that the ultrasonic irradiation unit 160 can be switched to the positions on both sides of the registration nozzle 154 in the Y direction. It has become.

Next, the operation of the resist coating unit (CT) 82 of this embodiment will be described with reference to FIGS.

First, the substrate G before the coating process is applied to the resist coating unit (CT) 82 by the pass unit (PASS) 60 (FIGS. 1 and 2) in the downstream multistage unit (TB) of the first thermal processing unit 26. It is carried in. In the resist coating unit (CT) 82, the stage 138 is lifted by the lifting drive unit 140 to a position where it comes out from the upper opening of the processing container 136, and the substrate G is transferred onto the stage 138 by a transfer arm (not shown). In order to hold the substrate G, for example, a vacuum-type suction unit (not shown) may be provided on the upper surface of the stage 138.

When the substrate G is placed on the stage 138, the stage 138 is lowered to a predetermined position in the processing container 136 by the elevation drive unit 140, and the resist coating process is performed on the substrate G at that position.

In this resist coating process, when the resist nozzle 154 receives a resist solution from a resist solution supply unit (not shown) via a resist supply pipe 156 and discharges the resist solution toward the substrate G at a predetermined pressure and flow rate. At the same time, the scanning mechanism 144 moves the resist nozzle 154 vertically and horizontally in the X and Y directions, thereby forming a single resist liquid film with a desired film thickness on the substrate G. More specifically, as shown in FIGS. 8, 10 and 13, the surface to be processed of the substrate G is divided into a plurality of, for example, three scanning lines or scanning regions at regular intervals in the X direction. In the Y direction scanning, the resist liquid is applied to one region in a linear or band shape with a desired film thickness, and the line or band liquid film on the substrate G is subjected to a plurality of (three times) Y direction scanning to form a line or a band. One surface of the resist liquid film having the above film thickness is formed on the substrate G by joining them in the band width direction.

8, in the first Y-direction scanning, the resist nozzle 154 is moved from one end (left end) to the other end (right end) in a direction (Y direction) perpendicular to the nozzle longitudinal direction with respect to the first scanning area on the substrate G. While the resist liquid is being ejected, it is moved in a straight line, and the resist liquid is applied in a strip shape to the first scanning area. On the other hand, the ultrasonic wave irradiating unit 160 is kept off, that is, moves integrally with the resist nozzle 154 along one edge of the substrate G without emitting ultrasonic waves. The position of the ultrasonic irradiation unit 160 with respect to the resist nozzle 154 may be set arbitrarily.

When the resist nozzle 154 goes outside the right end of the substrate G after the first Y-direction scan as described above, as shown in FIG. 9, the resist nozzle 154 is moved by a predetermined pitch in the nozzle longitudinal direction (X direction). It is moved to align with the second scanning area on the substrate G. In the meantime, during the next (second) Y-direction scanning, the ultrasonic irradiation unit 160 is positioned so as to be aligned behind the registration nozzle 154 and near the boundary between the first scanning area and the second scanning area. adjust. Note that the discharge of the resist liquid may or may not be stopped outside the substrate G.

Next, as shown in FIG. 10, a second Y-direction scan is performed. In this Y-direction scanning, the resist nozzle 154 moves straight from the one end (right end) to the other end (left end) in the direction (Y direction) perpendicular to the nozzle longitudinal direction, while discharging the resist liquid to the middle region of the substrate G. Then, the resist liquid is applied to the second scanning area in a belt shape. At this time, a boundary or a joint E between the band-shaped resist liquid film R (2) formed in the second scanning region and the band-shaped resist liquid film R (1) formed in the adjacent first scanning region is present. Inevitably, uneven portions, that is, irregularities (irregularities) are generated, and when the irregularities extend along the boundary, streaky coating unevenness occurs.

In this embodiment, as shown in FIGS. 10 and 11, the ultrasonic irradiation unit 160 is turned on immediately after the resist nozzle 154, that is, the boundary E between the two belt-shaped resist liquid films R (1) and R (2). It is moved integrally with the resist nozzle 154 while emitting ultrasonic waves toward the vicinity. By the ultrasonic irradiation scanning of the ultrasonic irradiation unit 160, the resist liquid is reduced in viscosity or fluidized by the energy of the ultrasonic wave near the boundary E between the two belt-shaped resist liquid films R (1) and R (2). As shown in FIG. 12, the liquid film surface is leveled in a direction (horizontal direction) parallel to the substrate surface, and irregularities are removed. Further, since ultrasonic waves are directly irradiated from the liquid film surface side (substrate processing surface side), sound pressure (pressure) is further directly applied to a portion where the resist liquid film has been reduced in viscosity or fluidized, and unevenness is generated. It is possible to further planarize. For this reason, streak-like coating unevenness does not occur along the boundary E between both belt-like resist liquid films R (1) and R (2), and even if it occurs or remains, it is suppressed to such a small size that no problem occurs. You. Since the ultrasonic wave is easily attenuated in the air, the tip (ultrasonic emission port) of the ultrasonic irradiation unit 160 may be brought as close as possible to the surface of the resist liquid film. preferable.

After the second scanning in the Y direction is completed, the resist nozzle 154 is moved to a predetermined pitch in the nozzle longitudinal direction (X direction) in the area outside the left end of the substrate G in the same manner as the previous time (at the end of the first scanning). And the scanning position is moved to the third scanning area of the substrate G. In the meantime, in the next (third) Y-direction scanning, the arrangement position of the ultrasonic irradiation unit 160 is switched so as to align behind the registration nozzle 154 and near the boundary between the second scanning area and the third scanning area. Or adjust it.

As shown in FIG. 13, in the third Y-direction scanning, the resist nozzle 154 is moved from one end (left end) to the other end (left end) in a direction (Y direction) perpendicular to the nozzle longitudinal direction with respect to the third scanning area on the substrate G. The resist solution is ejected to the right end) and moved straight to apply the resist solution in a strip shape to the third scanning area. Also at this time, the unevenness generated near the boundary E between the band-shaped resist liquid film R (3) formed in the third scanning region and the band-shaped resist liquid film R (2) previously formed in the second scanning region is By the ultrasonic irradiation from the ultrasonic irradiation unit 160, the ultrasonic wave is effectively removed by the same operation as described above. Thereby, it is possible to prevent or suppress the occurrence of streak-like coating unevenness along the boundary E between the two strip-shaped resist liquid films R (2), R (3).

(4) When the third scanning in the Y direction is performed as described above, the resist coating processing is completed, and a flat resist liquid coating film having a desired thickness is formed on the entire surface of the substrate G. After the completion of the resist coating process, the resist nozzle 154 and the ultrasonic irradiation unit 160 are retracted outside the processing container 136. In the processing container 136, in order to carry out the substrate G, the lifting / lowering drive unit 140 raises the stage 138 to a position where the stage 138 comes out from the upper opening of the processing container 136. Immediately after, the transfer arms 116, 116 receive the substrate G from the stage 138 and transfer it to the adjacent reduced-pressure drying unit (VD) 84.

In this embodiment, the registration nozzle 154 and the ultrasonic irradiation unit 160 are attached to the carriage 152, and the ultrasonic irradiation unit 160 is attached after the registration nozzle 154 to perform scanning movement together. There is a special advantage that the mechanism 144 can be shared by the resist nozzle 154 and the ultrasonic irradiation unit 160. However, it is unavoidable that the scanning means is complicated, but as shown in FIG. 14, the ultrasonic wave is generated by using a separate scanning mechanism (not shown) independent of the scanning mechanism for the registration nozzle 154. A method or configuration in which the irradiation unit 160 is independently moved by scanning so as to trace the vicinity of the boundary E between the adjacent strip-shaped resist liquid films R (i) and R (i + 1) on the substrate G is also possible. Although not shown, it is also possible to use a method in which an ultrasonic irradiation unit is brought close to or in contact with the back surface of the substrate G to locally apply ultrasonic energy from the back side of the substrate to near the boundary E of the belt-like resist liquid film on the substrate.

Although not shown, a plurality of ultrasonic irradiation units 160 are arranged in parallel, for example, in a line to form a line-type ultrasonic irradiation unit, and ultrasonic waves distributed on a horizontal line from the line-type ultrasonic irradiation unit are transmitted. It is also possible to irradiate the vicinity of the boundary E of the band-shaped resist liquid film on the substrate G to collectively flatten the linear irregularities. Also in such a line type ultrasonic irradiation system, the line type ultrasonic irradiation unit may be moved by using an appropriate scanning mechanism so that the ultrasonic irradiation position on the substrate can be arbitrarily scanned.

In this embodiment, for example, a heating lamp unit 162 as shown in FIG. 15 may be used instead of the ultrasonic irradiation unit 160. This lamp unit 162 has a heating light source, for example, a halogen lamp 166 and a reflecting mirror 168 facing downward in a cylindrical casing 164 having an opening at the lower end, and transmits light LB emitted from the halogen lamp 166 through a condenser lens 170 to a lower end opening. The light is emitted from the (emission port) 164a toward the work position, that is, near the boundary E between the adjacent strip-shaped resist liquid films R (i) and R (i + 1) on the substrate G. Even by such a lamp heating method, the viscosity of the resist liquid can be reduced near the boundary E of the belt-like resist liquid film to activate the fluidity, and the surface of the resist liquid film can be flattened by leveling unevenness. In addition, as a heating light source, for example, an infrared lamp that emits infrared light or the like can be used.

Further, as shown in FIG. 16, for example, the lamp unit 162 is formed in a horizontally long shape so as to cover from one end to the other end of the substrate G, and the heating light beam is disposed near the boundary E of the belt-like resist liquid film on the substrate G. A method of simultaneously (parallel) irradiating the LB collectively is also possible. In this method, the lamp unit 162 may be step-transferred and aligned in the X-direction by an X-direction feed mechanism (not shown) via the unit supporting member 172 so as to align the lamp unit 162 near the boundary E of each strip-shaped resist liquid film. .

In the above embodiment, the substrate G is fixed on the stage 138, and the resist nozzle 154 and the ultrasonic irradiation unit 160 (or the lamp unit 162) are moved by scanning. However, a scanning method in which the substrate G is moved is also possible.

In the ultrasonic irradiation method of the above embodiment, a resonance member that vibrates in resonance with the ultrasonic wave from the ultrasonic irradiation section 160 is provided, and the ultrasonic wave radiated or reflected from the resonance member is applied to the resist liquid film on the substrate G. The method used for flattening is also effective. Hereinafter, an embodiment of the ultrasonic resonance system will be described with reference to FIGS.

FIG. 17 shows the configuration of the holding unit and the resonance member according to one embodiment. The illustrated holding unit 180 is configured as a holding plate of substantially the same shape having a size slightly larger than the substrate G, and is disposed, for example, in the processing container 136 of the resist coating unit (CT) 82. On the upper surface of the holding plate 180, a plurality of support pins 182 abutting on the lower surface of the substrate G and a plurality of positioning pins 184 abutting on four side surfaces of the substrate G in order to place the substrate G horizontally. Are provided.

Furthermore, a long resonance member 186 is attached to the holding plate 180 at a plurality of locations. More specifically, a linear groove 188 is formed in a portion of the holding plate 180 located immediately below the ultrasonic irradiation scanning line on the substrate G, and a long resonance member 186 is disposed in the groove 188. ing. The resonance member 186 is integrally formed of, for example, the same material (eg, metal, resin, or the like) as the holding plate 180, and is supported by the holding plate 180 by the support portion 190 at a position that becomes a node (node) at the time of resonance. .

As shown in FIG. 18, when ultrasonic waves are radiated from the upper resist irradiating section 160 toward the vicinity of the boundary between the adjacent strip-shaped resist films R (1) and R (2) on the substrate G, the both strip-shaped resist films A part of the ultrasonic wave incident on the boundary between R (1) and R (2) is absorbed there, and the other part transmits through the substrate G and enters the resonance member 186 below or on the back side of the substrate. By matching the frequency of the ultrasonic wave emitted from the resist irradiator 160 with the resonance frequency of the resonance member 186, the resonance member 186 can resonate or resonate. The secondary ultrasonic waves generated by the resonance of the resonance member 186 are radiated as reflected waves to the substrate G side. Thus, ultrasonic energy can be supplied to the boundary between the two strip-shaped resist films R (1) and R (2) from both the upper and lower directions, and the unevenness can be more effectively removed or flattened. In addition, the use efficiency or energy efficiency of ultrasonic waves can be improved by the ultrasonic reflection function of the resonance member 186.

The ultrasonic irradiation unit 160 may be a line-type ultrasonic irradiation unit as described above. Further, instead of being formed integrally with the holding plate 180, the resonance member 186 may be attached to the holding plate 180 as a separately formed component. The configuration and the layout of the resonance member 186 can be variously modified. For example, the configurations shown in FIGS. 19 and 20 are also possible.

In the configuration of FIG. 19, the arrangement direction of the resonance members 186 on the holding plate 180 is orthogonal to FIG. The number and arrangement pitch of the resonance members 186 can be arbitrarily selected as shown in the figure.

In the configuration of FIG. 20, a large number of dot-shaped or cell-shaped resonance members 200 are arranged on the holding plate 180 in a matrix. According to this matrix method, even if the unevenness of the resist liquid film occurs at an arbitrary position on the substrate G, the unevenness at each position is irradiated with ultrasonic waves from both the upper and lower directions of the substrate G to perform adaptive flattening. Can be applied.

FIGS. 21 and 22 show an embodiment for optimizing the resonance function of the resonance member 186 (or the resonance member 200) as described above.

In the embodiment of FIG. 21, the distance between the upper surface of the substrate G and the ultrasonic irradiation unit 160 can be adjusted in order to vibrate the resonance member 186 in a resonance state. More specifically, the ultrasonic irradiation unit 160 is configured to be able to move up and down by an actuator such as a linear motor 202. The linear motor 202 may be attached to the carriage 152 (FIG. 6), for example, and moves the ultrasonic irradiation unit 160 up and down under the control of the controller 204.

On the other hand, a vibration detector or a sensor 206 that detects the vibration of the resonance member 186 and converts the vibration into an electric signal is arranged near the resonance member 186, and the measurement circuit 208 uses the output signal of the sensor 206 to indicate the vibration of the resonance member 186. Measure parameters. As the vibration parameter, for example, a vibration amplitude and a vibration frequency can be selected. The sensor 206 for detecting the vibration may be constituted by, for example, a receiver for detecting the vibration of the resonance member 186 as a sound wave, or may be of a type for detecting a change in capacitance or an eddy current using a capacitor or a coil. It is. The measurement circuit 208 may be configured by an amplifier circuit, a signal processing circuit or an arithmetic circuit according to each parameter. The control unit 210 controls the height position of the ultrasonic irradiation unit 160, that is, the upper surface of the substrate G through the controller 204 and the linear motor 202 based on the parameter measurement values (vibration amplitude measurement value, frequency measurement value) obtained from the measurement circuit 208. Is variably controlled. For example, when the vibration amplitude of the resonance member 186 is used as a vibration parameter, the distance interval may be adjusted so that the measured vibration amplitude matches the maximum value of the vibration amplitude. When the frequency of the resonance member 186 is used as the vibration parameter, the natural frequency or the resonance frequency of the resonance member 186 is set in a memory as a reference value, and the distance interval is set so that the measured frequency value matches the reference value. Adjust it.

In the embodiment of FIG. 22, the frequency of the ultrasonic waves emitted from the ultrasonic irradiation unit 160 can be adjusted in order to vibrate the resonance member 186 in a resonance state. More specifically, the frequency of the ultrasonic wave generated in the ultrasonic irradiation unit 160 can be variably controlled. For example, the oscillation circuit of the high-frequency power supply unit that drives the vibrator is constituted by a voltage-controlled oscillation circuit, and an external frequency controller 212 supplies a voltage-controlled signal to the voltage-controlled oscillation circuit. The control unit 210 can variably control the frequency of the ultrasonic wave emitted from the ultrasonic irradiation unit 160 through the frequency controller 212 based on the parameter measurement values (vibration amplitude measurement value, frequency measurement value) obtained from the measurement circuit 208. . That is, when the vibration amplitude of the resonance member 186 is used as the vibration parameter, the frequency of the ultrasonic wave may be adjusted so that the measured vibration amplitude matches the maximum vibration amplitude. When the vibration frequency of the resonance member 186 is used as the vibration parameter, the frequency of the ultrasonic wave may be adjusted so that the measured frequency value matches the reference value (resonance frequency).

In the above embodiment (FIGS. 21 and 22), the resonance member 186 can be reliably vibrated in a resonance state by automatic control, which can advantageously cope with an increase in the size of the substrate. That is, each part (the processing container 136, the scanning mechanism 144, and the like) in the resist coating unit (CT) 82 becomes larger with the increase in the size of the substrate, so that manual adjustment by an operator becomes difficult. According to the automatic adjustment mechanism as described above, the adjustment of the ultrasonic irradiation unit 160 (particularly, the adjustment of the distance interval in FIG. 21) can be performed finely and easily without being affected by the size increase. Moreover, real-time adjustment during ultrasonic irradiation scanning is also possible.

に よ り As described above, the adjustment range on the ultrasonic irradiation unit 160 side can increase the selection width or the degree of freedom of the resonance characteristics of the resonance member 186. Although not shown, a plurality of resonance members having different resonance characteristics are arranged on the same holding plate 180, and only a part of the plurality of resonance members is selectively resonated by an adjustment or tuning function on the ultrasonic irradiation unit 160 side. It is also possible to make it.

As another embodiment, when the lamp unit 162 (FIGS. 15 and 16) is used instead of the ultrasonic irradiation unit 160, the light from the lamp unit 162 is used instead of the resonance member 186 (200), though not shown. May be provided on the holding plate 180. Such a light reflector is preferably of a total reflection type. The light reflector receives lamp light transmitted through the substrate G, reflects the light toward the substrate G, and heats the resist liquid film on the substrate G from behind (below). Thus, the efficiency of using light energy in the lamp heating method can be increased.

形態 Alternatively, the ultrasonic irradiation body 160 and the lamp unit 162 may be provided side by side, and both may be selectively used. For example, in the multilayer resist method, using the thickness of the multilayer resist film on the substrate G as a parameter, the ultrasonic irradiation body 160 is used when the film thickness is larger than a set value, and when the film thickness is smaller than the set value. A lamp unit 162 can also be used. Generally, ultrasonic waves are less attenuated in a multilayer film than light (including not only visible light but also infrared light), and are therefore advantageous for a multilayer film having a large film thickness. On the other hand, in the case of a thin multilayer film, the viscosity of the resist can be reduced by heating the light irradiation using the lamp unit 162 and the light reflector, and the unevenness can be efficiently flattened.

FIG. 23 shows an embodiment relating to the irradiation angle in the ultrasonic irradiation method of the present invention. In this embodiment, the ultrasonic irradiator 160 irradiates the ultrasonic waves toward the unevenness of the resist liquid film on the substrate G from a direction inclined obliquely from above the unevenness. More specifically, as shown in the drawing, the ultrasonic irradiating body 160 is attached to the carriage 152 by the support arm 214 so that the ultrasonic wave is emitted at an angle of, for example, θ = 20 ° to 80 ° with respect to the perpendicular of the substrate G. Install diagonally through. Preferably, for example, the tip surface of the ultrasonic irradiation body 160 hits the slope D of the ridge so that the ultrasonic wave emitted from the ultrasonic irradiation body 160 hits at an angle perpendicular to or close to the slope D of the ridge of the resist liquid film. May be substantially parallel. The support arm 214 may be constituted by a rotatable actuator so that the direction of the ultrasonic irradiation body 160 can be variably adjusted. As described above, the ultrasonic waves from the ultrasonic irradiation body 160 are applied almost perpendicularly to the unevenness of the resist liquid film on the substrate G, particularly to the slope D of the raised portion, so that the unevenness is more effectively flattened. be able to.

In the above-described embodiment, the resist solution is applied in a linear or band shape on the substrate G, and the linear unevenness generated near the boundary between the adjacent linear or band-shaped coating films on the substrate is flattened. However, the coating film flattening technique according to the present invention is not limited to the case where such linear irregularities are flattened, but any shape irregularities (non-flat portions) generated in an arbitrary pattern on the coating film. ) Can be applied to the case of flattening. Further, it is also possible to detect the unevenness (particularly, the raised portion) of the resist film on the substrate by using a known film thickness measuring technique. As the energy applied to the resist film for planarization, for example, an electron beam or the like can be used in addition to ultrasonic waves and light.

Although the above-described embodiment relates to a resist coating method and apparatus in a coating and developing processing system for LCD manufacturing, the present invention is applicable to any application for supplying a coating liquid onto a substrate to be processed. As the coating liquid in the present invention, for example, a liquid such as an interlayer insulating material, a dielectric material, and a wiring material can be used in addition to the resist liquid. The substrate to be processed in the present invention is not limited to an LCD substrate, but may be a semiconductor wafer, a CD substrate, a glass substrate, a photomask, a printed substrate, or the like.

FIG. 1 is a plan view illustrating a configuration of a coating and developing processing system to which a coating method and a coating apparatus of the present invention can be applied. FIG. 2 is a schematic side view illustrating a configuration of a thermal processing unit in the coating and developing processing system of FIG. 1. FIG. 2 is a flowchart illustrating a processing procedure in the coating and developing processing system of FIG. 1. FIG. 2 is a plan view illustrating a configuration of a main part of a coating processing unit group in the coating and developing processing system of FIG. 1. FIG. 2 is a side view showing a configuration of a main part of a coating processing unit group in the coating and developing processing system of FIG. 1. FIG. 3 is a perspective view illustrating a configuration of a scanning mechanism in the resist coating unit according to one embodiment. FIG. 3 is a longitudinal sectional view illustrating a configuration example of a resist nozzle in the resist coating unit of the embodiment. FIG. 4 is a schematic plan view showing one stage of a resist coating process in the resist coating unit of the embodiment. FIG. 4 is a schematic plan view showing one stage of a resist coating process in the resist coating unit of the embodiment. FIG. 4 is a schematic plan view showing one stage of a resist coating process in the resist coating unit of the embodiment. FIG. 4 is a schematic partial cross-sectional side view illustrating an operation of an ultrasonic irradiation unit in the resist coating unit of the embodiment. FIG. 4 is a schematic partial cross-sectional side view illustrating an operation of an ultrasonic irradiation unit in the resist coating unit of the embodiment. FIG. 4 is a schematic plan view showing one stage of a resist coating process in the resist coating unit of the embodiment. FIG. 3 is a schematic plan view showing ultrasonic irradiation scanning according to one embodiment. It is a longitudinal section showing the composition of the lamp unit by one example. FIG. 4 is a perspective view illustrating a lamp heating method according to an embodiment. It is a perspective view showing composition of a maintenance plate (retention part) and a resonance member by one example. It is a partial section side view showing an operation of a resonance member in one example. It is a top view showing composition of a holding plate and a resonance member by one example. It is a top view showing composition of a holding plate and a resonance member by one example. FIG. 4 is a diagram illustrating a mechanism for adjusting a distance between a substrate and an ultrasonic irradiation unit according to one embodiment. FIG. 4 is a diagram illustrating a mechanism for adjusting a frequency of an ultrasonic wave emitted from an ultrasonic irradiation unit according to one embodiment. It is a figure showing an important section of an ultrasonic irradiation method by one example.

Explanation of reference numerals

82 Resist Coating Unit (CT)
138 Stage 144 Scanning mechanism 152 Carriage 154 Resist nozzle 156 Resist supply tube 158 Support arm 160 Ultrasonic irradiation unit 162 Lamp unit 180 Holding plate (holding unit)
186 resonance member 200 resonance member 202 linear motor (actuator)
204 Controller 206 Sensor (Vibration detector)
208 Measurement circuit 210 Control unit 212 Controller 214 Support arm

Claims (29)

A nozzle that discharges a predetermined coating liquid to a substrate to be processed supported substantially horizontally is scanned in a horizontal plane at a predetermined interval in a first direction and in a second direction orthogonal to the first direction. A first step of applying the coating liquid on the substrate in a linear or band form for each scan;
A second step of locally applying energy to the vicinity of a boundary between adjacent linear or belt-shaped coating liquid films on the substrate to flatten the coating liquid film. 4. The coating method according to claim 1, wherein in the second step, an ultrasonic wave is applied near a boundary of the linear or band-shaped coating liquid film on the substrate. 3. The coating method according to claim 2, wherein the ultrasonic wave is applied from a direction inclined obliquely from above the boundary to the vicinity of the boundary of the linear or band-shaped coating liquid film. 4. The coating method according to claim 1, wherein in the second step, heating light is irradiated near a boundary of the linear or band-shaped coating liquid film on the substrate. The coating method according to any one of claims 1 to 4, wherein, in the second step, the energy is applied to the vicinity of a boundary of the linear or band-shaped coating liquid film on the substrate while scanning in the second direction. . 5. The method according to claim 1, wherein, in the second step, the energy is simultaneously applied to the vicinity of a boundary of the linear or band-shaped coating liquid film on the substrate in a collective manner in the second direction. 6. Coating method. A first step of applying a coating liquid on a surface to be processed of the substrate to be processed,
A second step of irradiating the coating liquid film on the substrate with ultrasonic waves. In the first step, irregularities are formed in the coating liquid film on the substrate,
The coating method according to claim 7, wherein the ultrasonic wave is applied to the unevenness of the coating liquid film in the second step. The coating method according to claim 8, wherein the ultrasonic wave is applied from a direction inclined obliquely from above and below the ridge toward the slope of the ridge. A nozzle for supplying a predetermined coating solution toward the substrate to be processed supported substantially horizontally,
First scanning means for scanning the substrate at a predetermined distance in a first direction in a horizontal plane with respect to the substrate in a second direction orthogonal to the first direction;
And a flattening means for locally applying energy to the vicinity of a boundary between adjacent linear or belt-shaped coating liquid films on the substrate to flatten the coating liquid film. The coating apparatus according to claim 10, wherein the flattening means applies the energy to the vicinity of a boundary of the linear or band-shaped coating liquid film on the substrate while scanning the energy in the second direction. The coating apparatus according to claim 11, wherein the flattening unit performs the scanning movement together with the nozzle by the first scanning unit. The coating apparatus according to claim 11, wherein the flattening unit performs a scanning movement by a second scanning unit independent of the first scanning unit. The coating apparatus according to claim 10, wherein the flattening means simultaneously and simultaneously applies the energy in the second direction near a boundary of the linear or band-shaped coating liquid film on the substrate. The coating apparatus according to any one of claims 10 to 14, wherein the flattening unit has an ultrasonic irradiation unit that irradiates an ultrasonic wave near a boundary of the linear or band-shaped coating liquid film on the substrate. The coating apparatus according to any one of claims 10 to 14, wherein the flattening unit includes a light irradiating unit configured to irradiate heating light near a boundary of the linear or band-shaped coating liquid film on the substrate. Coating means for applying a coating liquid on the surface to be processed of the substrate to be processed,
An ultrasonic irradiation unit that irradiates an ultrasonic wave to the coating liquid film on the substrate. The coating apparatus according to claim 17, wherein the ultrasonic irradiation unit emits the ultrasonic waves at a position 1 mm to 5 mm away from the surface of the coating liquid film on the substrate. The said ultrasonic irradiation part has a vibrator which produces | generates the said ultrasonic wave, and the ultrasonic horn which radiates | emits the said ultrasonic wave from the said vibrator toward the said coating liquid film on the said board | substrate into the atmosphere, The claim The coating device according to claim 17 or 18. 20. The coating apparatus according to claim 19, further comprising a plurality of the ultrasonic irradiation units, wherein the plurality of ultrasonic irradiation units are arranged in parallel toward the substrate. The coating device according to any one of claims 17 to 20, further comprising a moving mechanism configured to move the ultrasonic irradiation unit relative to the substrate in order to scan an irradiation position of the ultrasonic wave on the substrate. . Irregularities are formed in the coating liquid film applied on the substrate by the coating means,
The coating device according to any one of claims 17 to 21, wherein the ultrasonic waves from the ultrasonic irradiation unit are applied to irregularities of the coating liquid. 23. The coating method according to claim 22, wherein the ultrasonic irradiation unit irradiates the ultrasonic waves toward a slope of the uneven ridge from a direction inclined obliquely from above the ridge. A holding unit for holding the substrate,
The coating device according to any one of claims 17 to 23, further comprising: a resonance member provided on the holding unit and resonating with the ultrasonic waves from the ultrasonic irradiation unit. 25. The coating apparatus according to claim 24, wherein the resonance member is disposed at a position facing the ultrasonic irradiation body with the substrate interposed therebetween. A vibration amplitude detection unit that detects a vibration amplitude of the resonance member,
26. An interval adjusting unit that variably adjusts a distance interval between the substrate and the ultrasonic irradiation body according to an oscillation amplitude of the resonance member detected by the oscillation amplitude detecting unit. Coating equipment. A frequency detector for detecting the frequency of the resonance member,
26. An interval adjusting unit that variably adjusts a distance interval between the substrate and the ultrasonic irradiation body according to a frequency of the resonance member detected by the frequency detecting unit. Coating equipment. A vibration amplitude detection unit that detects a vibration amplitude of the resonance member,
26. A frequency adjustment unit that variably adjusts the frequency of the ultrasonic wave emitted from the ultrasonic irradiation body according to the vibration amplitude of the resonance member detected by the vibration amplitude detection unit. Coating equipment. A frequency detector for detecting the frequency of the resonance member,
26. A frequency adjustment unit that variably adjusts the frequency of the ultrasonic wave emitted from the ultrasonic irradiation body according to the frequency of the resonance member detected by the frequency detection unit. Coating equipment.

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