JP2004103930A - ｐ型ＧａＮ系化合物半導体の製造方法 - Google Patents

ｐ型ＧａＮ系化合物半導体の製造方法 Download PDF

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Publication number
JP2004103930A
JP2004103930A JP2002265473A JP2002265473A JP2004103930A JP 2004103930 A JP2004103930 A JP 2004103930A JP 2002265473 A JP2002265473 A JP 2002265473A JP 2002265473 A JP2002265473 A JP 2002265473A JP 2004103930 A JP2004103930 A JP 2004103930A
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Japan
Prior art keywords
gan
atmosphere
based semiconductor
crystal
cooling
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JP2002265473A
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Japanese (ja)
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JP2004103930A5 (cg-RX-API-DMAC7.html
Inventor
Hiroaki Okagawa
岡川　広明
Kazuyuki Tadatomo
只友　一行
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Mitsubishi Cable Industries Ltd
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Mitsubishi Cable Industries Ltd
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Priority to JP2002265473A priority Critical patent/JP2004103930A/ja
Publication of JP2004103930A publication Critical patent/JP2004103930A/ja
Publication of JP2004103930A5 publication Critical patent/JP2004103930A5/ja
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JP2002265473A 2002-09-11 2002-09-11 ｐ型ＧａＮ系化合物半導体の製造方法 Pending JP2004103930A (ja)

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JP2002265473A JP2004103930A (ja) 2002-09-11 2002-09-11 ｐ型ＧａＮ系化合物半導体の製造方法

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JP2002265473A JP2004103930A (ja) 2002-09-11 2002-09-11 ｐ型ＧａＮ系化合物半導体の製造方法

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JP2004103930A true JP2004103930A (ja) 2004-04-02
JP2004103930A5 JP2004103930A5 (cg-RX-API-DMAC7.html) 2005-08-11

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006112167A1 (ja) * 2005-04-01 2006-10-26 Sharp Kabushiki Kaisha ｐ型窒化物半導体の製造方法及びその方法を用いて作製された半導体装置
JP2008235622A (ja) * 2007-03-22 2008-10-02 Mitsubishi Chemicals Corp ｐ型窒化物系化合物半導体膜の作製方法
JP2010045396A (ja) * 2005-04-05 2010-02-25 Toshiba Corp 窒化ガリウム系半導体素子の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006112167A1 (ja) * 2005-04-01 2006-10-26 Sharp Kabushiki Kaisha ｐ型窒化物半導体の製造方法及びその方法を用いて作製された半導体装置
US8076165B2 (en) 2005-04-01 2011-12-13 Sharp Kabushiki Kaisha Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method
JP2010045396A (ja) * 2005-04-05 2010-02-25 Toshiba Corp 窒化ガリウム系半導体素子の製造方法
JP2008235622A (ja) * 2007-03-22 2008-10-02 Mitsubishi Chemicals Corp ｐ型窒化物系化合物半導体膜の作製方法

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