JP2004103672A - Semiconductor light emitting element and semiconductor light emitting device - Google Patents

Abstract

An optical semiconductor device having high light output and high reliability is provided.
A light emitting layer having a pn junction is formed on an upper surface of a transparent substrate having a light transmitting wavelength, and an upper electrode and a lower electrode are formed on an upper surface and a lower surface of the transparent substrate, respectively. Has formed. Then, of the four side surfaces of the transparent substrate 21, a pair of side surfaces 27 and 28 facing each other are formed on a sloping surface diverging from the lower surface to the upper surface, and the other pair of side surfaces 29 and 30 are formed as upper surfaces. From the bottom to the lower surface.
[Selection diagram] Fig. 1

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor light emitting device and a semiconductor light emitting device using a transparent substrate, and more particularly to a semiconductor light emitting device and a semiconductor light emitting device having a structure suitable for increasing light output.
[0002]
[Prior art]
2. Description of the Related Art In recent years, semiconductor light emitting devices, especially light emitting diodes (LEDs), have been widely used for full-color displays, traffic / signal devices, in-vehicle applications, and the like. .
[0003]
The structure of this type of conventional typical LED will be described with reference to FIG. As shown in FIG. 8, a light emitting layer 2 having a pn junction is formed on an upper surface of a transparent substrate 1 having a substantially rectangular cross-sectional shape and having a light-transmitting property with respect to a light emission wavelength. In order to establish a connection, an upper surface electrode 3 is provided on the upper surface side, and a lower surface electrode 4 is provided on the lower surface side.
[0004]
In the LED configured as described above, of the light emitted from the pn junction, a light ray whose incident angle is equal to or less than the critical angle shown by a solid line in the figure is extracted outside the LED, but is shown by a dotted line in the figure. Light rays having a critical angle or more are totally reflected, and are repeatedly absorbed by the light-emitting layer 2 and the transparent substrate 1 while being repeatedly reflected inside the LED.
[0005]
For this reason, as the size of the LED increases, it becomes extremely difficult to extract light, and there is a problem that a high light output cannot be obtained.
[0006]
An example of an LED that solves this problem is disclosed in Japanese Patent Application Laid-Open No. H10-34135. The LED has an inverted quadrangular truncated pyramid structure having a continuous side surface forming an oblique angle such that the upper side is a long side and the lower side is a short side, and diverges from the lower side toward the upper side.
[0007]
Another example is disclosed in JP-A-3-35568. This LED has a plurality of side surfaces perpendicular to the lower surface, and between the side surface and the upper surface parallel to the lower surface, a plurality of inclined surfaces having the same number as the vertical side surfaces so as to diverge toward the lower surface side. It has a substantially quadrangular truncated pyramid structure.
[0008]
However, the LED disclosed in the above-mentioned patent publication can improve the light output more than the LED having a rectangular cross section, but has the following problems.
[0009]
That is, when an LED having a trapezoidal structure having flared sides is molded with a resin such as epoxy, stress is unevenly applied to the LED. For example, when the LED spreads toward the upper surface of the LED, an upward force is applied to the LED from the resin, and conversely, when the LED spreads toward the lower surface of the LED, a downward force is applied.
[0010]
Such distortion due to uneven stress applied to the LED not only seriously impairs the long-term reliability of the LED, but also causes fatal effects such as peeling of the LED from the mounting surface and cracking of the LED due to excessive stress. May cause serious defects.
[0011]
[Problems to be solved by the invention]
However, a high light output cannot be obtained in the above-described LED having a rectangular cross section, while the LED disclosed in the patent publication has a problem in reliability. That is, it has been difficult for conventional LEDs to simultaneously satisfy the light output and reliability.
[0012]
The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor light emitting element and a semiconductor light emitting device having high light output and high reliability.
[0013]
[Means for Solving the Problems]
In order to achieve the above object, in the semiconductor light emitting device of the present invention, a transparent substrate having a light transmitting wavelength, a light emitting layer having a pn junction formed on the transparent substrate, A first side surface that is a splayed sloping surface from one main surface of the transparent substrate toward the other main surface; It has a second side surface that is a splayed sloping surface from the main surface toward one main surface.
[0014]
In order to achieve the above object, in the semiconductor light emitting device of the present invention, a transparent substrate having a light-transmitting property with respect to an emission wavelength and having a plurality of four or more side surfaces is provided. A first electrode connected to the surface, a second electrode connected to the other main surface of the transparent substrate, and a light emitting layer having a pn junction provided on the transparent substrate between the main surfaces. Two or more side surfaces of the plurality of side surfaces have a first side surface that is a divergent sloping surface from one main surface toward the other main surface, and the remaining side surface of the plurality of side surfaces Two or more side surfaces have a second side surface that is a divergent inclined surface from the other main surface toward the one main surface, and the first and second side surfaces are provided in line symmetry. It is characterized by having.
[0015]
Further, in order to achieve the above object, in the semiconductor light emitting device of the present invention, a transparent substrate having a light transmitting wavelength with respect to an emission wavelength, a light emitting layer having a pn junction formed on the transparent substrate, A semiconductor light-emitting element having an electrode for electrically connecting to a lead frame, one end of which is electrically connected to the electrode of the semiconductor light-emitting element, and the other end of the lead frame except for the other end thereof. A first resin having one end and a transparent resin sealing the semiconductor light emitting element, wherein a side surface of the transparent substrate is a sloping inclined surface diverging from one main surface to the other main surface of the transparent substrate. It is characterized by having a side surface and a second side surface that is a sloping surface diverging from the other main surface toward the one main surface.
[0016]
According to the present invention, since the side surface is formed as an inclined surface, the light output is high, and the first side surface and the second side surface are formed as mutually opposite inclined surfaces to reduce the stress of the transparent resin. Therefore, a highly reliable semiconductor light emitting device and semiconductor light emitting device can be obtained.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0018]
(First Embodiment)
FIG. 1 is a view showing a first embodiment of a semiconductor light emitting device according to the present invention. FIG. 1 (a) is a plan view of the semiconductor light emitting device, and FIG. 1 (b) is A in FIG. 1 (a). 1C is a cross-sectional view taken along the line A and viewed in the direction of the arrow, and FIG. 1C is a cross-sectional view cut along the line BB of FIG. 1B and viewed in the direction of the arrow.
[0019]
In the semiconductor light emitting device (LED) of the present embodiment, the transparent substrate 21 having a light-transmitting property with respect to the emission wavelength is made of, for example, GaP, GaAs, InP, SiC, or Al ₂ O ₃ . The transparent substrate 21 is provided with a light emitting layer 22 having a pn junction made of, for example, GaP, GaAs, GaAsP, GaAlAs, InGaAlP, InGaAsP, or InGaAlN. Hereinafter, the transparent substrate 21 including the light emitting layer 22 will be referred to.
[0020]
Further, an upper surface (one main surface) 25 and a lower surface (the other main surface) 26 of the transparent substrate 21 are provided with an upper surface electrode (first electrode) 23 for wire bonding connection and a lower surface for attaching to a lead frame. Electrodes (second electrodes) 24 are provided, respectively.
[0021]
Further, in the LED of the present embodiment, of the four side surfaces of the transparent substrate 21, a pair of opposing first side surfaces 27 and 28 are, as shown in FIG. From the upper surface 25 to the upper surface 25, a flared trapezoidal inclined surface is formed, and the other pair of second side surfaces 29 and 30 are formed from the upper surface 25 to the lower surface 26 as shown in FIG. Towards the end, it is formed on an inclined surface having a flared trapezoidal shape. That is, the first and second side surfaces are provided in line symmetry with respect to the center line of the upper surface 25.
[0022]
That is, the upper surface 25 of the transparent substrate 21 forms a rectangle having the long sides of the trapezoid of the first side surfaces 27 and 28 and the short sides of the trapezoid of the second side surfaces 29 and 30 as four sides, and the lower surface 26 has the Each of the first side surfaces 27 and 28 has a trapezoidal short side, and the second side surfaces 29 and 30 have a trapezoidal long side having four sides. That is, the upper surface 25 and the lower surface 26 of the transparent substrate 21 face each other in a 90-degree twisted relationship.
[0023]
Vertical side surfaces 31 and 32 are provided between the upper surface 25 of the transparent substrate 21 and the second side surfaces 29 and 30.
[0024]
The angle between the first side surfaces 27 and 28 and the second side surfaces 29 and 30 and the vertical direction of the transparent substrate 21 is determined in consideration of the refractive index of the transparent resin (not shown) to be molded.
[0025]
For example, when the transparent substrate 21 is GaP and is molded with a transparent resin made of an epoxy resin, since the refractive index for red is 3.3 and 1.5, respectively, a vicinity of about 27 degrees (critical angle) is selected. In general, a range of about 20 to 40 degrees is appropriate.
[0026]
In the LED configured as described above, not only the light beam whose incident angle is less than the critical angle shown by the solid line in FIG. 1C, but also the light beam whose critical angle is more than the critical angle shown by the dotted line in the figure. Can be taken out.
[0027]
FIG. 2 is a sectional view of a semiconductor light emitting device using the LED shown in FIG.
[0028]
As shown in the figure, the transparent substrate 21 is placed in a reflection cup 34 formed at one end of a lead frame 33a such that the upper electrode 23 is on the emission observation surface side, and the lower electrode 24 is made of a conductive paste. (Not shown) and is fixed to the lead frame 33a. Then, after the upper electrode 23 and one end of another lead frame 33b are connected by an Au wire 35, the other ends of the lead frames 33a and 33b and the LED portion are molded into a lens shape with a transparent resin 36. Thus, the semiconductor light emitting device 37 is obtained.
[0029]
Next, a method of manufacturing the LED will be described with reference to FIG. FIG. 3 is a cross-sectional view for explaining a step of cutting a wafer formed with a large number of LEDs, FIG. 3A is a cross-sectional view of a step of dicing from the back surface of the wafer, and FIG. FIG. 9 is a sectional view of a step of dicing from the surface of the wafer.
[0030]
First, a wafer 41 on which LEDs are formed is attached to a dicing sheet (not shown) with the lower surface facing upward, and dicing is performed in one direction at a predetermined pitch from a lower surface 42 of the wafer by a dicing blade 43 having a V-shaped cross section. .
[0031]
At this time, the wafer 41 is not completely cut, and the uncut portions are left as vertical side surfaces 31 and 32 between the upper surface 25 of the LED and the second side surfaces 29 and 30. This is to prevent the wafer 41 from being broken into strips when detached from the dicing sheet.
[0032]
Next, the wafer 41 is turned over so that the upper surface faces upward, and the wafer 41 is again attached to the dicing sheet. Dicing is performed at a predetermined pitch from the upper surface 44 of the wafer in a direction perpendicular to the dicing groove of the lower surface 42 of the wafer, and the wafer 41 is cut.
[0033]
Here, if it is possible to finally separate the LED, it may not be necessary to completely cut the LED, and the uncut portion may be formed by the lower surface 26 of the element and the first side surface 27 as in the case of the vertical side surfaces 31 and 32. , 28 as vertical sides.
[0034]
FIG. 4 is a plan view showing a part of the wafer 41 which has been cut as described above and has an array of V-shaped grooves.
[0035]
Then, after breaking the wafer 41 to separate the individual LEDs, the processing damage on the dicing surface is removed by etching to obtain the LEDs as shown in FIG.
[0036]
It is desirable to perform the etching for removing the processing damage even at the time when the dicing of the lower surface 42 of the wafer is completed, and there is an advantage that the wafer 41 can be prevented from being warped and carelessly broken due to the processing damage distortion.
[0037]
Dicing conditions such as the diamond abrasive grain size of the blade, the number of rotations of the blade, and the feed speed of the wafer may be appropriately selected depending on the semiconductor material used, and are not particularly limited here. The order of dicing is not particularly limited, and the dicing may be started from the upper surface 44 of the wafer. The same applies to the etching conditions for removing the processing damage.
[0038]
As described above, according to the LED and the semiconductor light emitting device of the first embodiment of the present invention, since all the side surfaces are inclined surfaces, not only the light beam whose incident angle is less than the critical angle, but also the light beam whose incident angle is less than the critical angle. Light rays can also be extracted outside, and a high light output can be obtained. Further, since the first and second side surfaces are inclined surfaces that are opposite to each other and are provided line-symmetrically, the stress of the transparent resin applied to the first side surface and the second side surface cancels each other, so that the transparent resin Stress is reduced, and reliability can be improved.
[0039]
(Example)
Next, a specific example in the case of manufacturing an LED having a GaP substrate and an InGaAlP light emitting layer and a semiconductor light emitting device using the LED will be described.
[0040]
Using a 150 μm thick wafer 41, with a V-shaped blade 43 having a tip angle of 60 °, after cutting to a depth of 120 μm from the lower surface 42 of the wafer at a pitch of 300 μm, the wafer 41 is turned upside down and rotated 90 °, Cutting was performed from the wafer surface 44 at a pitch of 300 μm.
[0041]
Next, the cut wafer 41 was broken and separated into LEDs, and the processing damage on the dicing surface was removed by etching with a mixed solution of hydrochloric acid and hydrogen peroxide solution. Thus, an LED having a side surface inclination angle of 30 degrees, a front surface size of 290 μm × 150 μm, a back surface size of 290 μm × 120 μm, and a height of 150 μm was obtained.
[0042]
FIG. 5 is an SEM photograph showing the appearance of the LED thus obtained. However, this is only for indicating the shape of the LED, and no electrodes or the like are provided here.
[0043]
Next, this LED is mounted with a conductive paste in a reflection cup 34 formed by one-piece molding of one end of a lead frame 33a so that the upper electrode 23 is on the emission observation surface side. After the Au wire 35 is ultrasonically bonded to the electrode 23 and one end of the lead frame 33b, one end of the lead frames 33a and 33b and the LED portion are molded into a lens shape with a transparent resin 36 made of epoxy, thereby forming a shell type. Of the semiconductor light emitting device 37 was obtained.
[0044]
Thereafter, the light output and reliability were measured. The light output of the LED showed a value 1.6 times or more higher than that of a conventional LED having a rectangular cross section. The reliability under the acceleration conditions of −40 ° C. and 50 mA was as good as the residual ratio of the light output after 10,000 hours of 92%, which is comparable to the residual ratio of a conventional element having a rectangular cross section of 95%. . At that time, no fatal defects such as peeling of the LED from the lead frame 33 and cracks were observed.
[0045]
Further, when the inclination angle of the side surface is in the range of 20 to 40 degrees, almost the same result is obtained. However, since the light output decreases as the side surface deviates from this range, 20 to 40 degrees is appropriate and preferable. .
[0046]
Further, the semiconductor light emitting device has been described as being a shell-type lamp, but is not limited to this, and may be a surface mount type or array type semiconductor light emitting device.
[0047]
(Second embodiment)
The external shape of the LED according to the second embodiment of the present invention is the same as that of FIG. 1 according to the first embodiment, and the drawings and detailed description thereof are omitted.
[0048]
The LED of the second embodiment is different from the LED of the first embodiment in that the first side surfaces 27 and 28 and the second side surfaces 29 and 30 are roughened over the entire area of the side surfaces. I did it.
[0049]
Various methods and conditions for the surface roughening can be used, and appropriate ones may be selected depending on the semiconductor material to be used, and are not particularly limited here. For example, anisotropic etching of a crystal can be performed using hydrochloric acid in a GaP system and nitric acid in a GaAs or GaAlAs system. In addition, a mechanical method that does not depend on a semiconductor material, such as sandblasting or ion bombardment, can be used.
[0050]
As described above, according to the LED of the second embodiment and the semiconductor light emitting device using the LED, total reflection of light is suppressed due to unevenness of the rough surface, and light extraction efficiency is increased. As a result, a higher light output can be obtained than in the LED and the semiconductor light emitting device of the first embodiment.
[0051]
(Example)
Next, a specific example in which the inclined side surface of the LED using the GaP substrate is roughened will be described in detail.
[0052]
For a GaP substrate, the use of hydrochloric acid etching is advantageous in terms of cost. In this case, if the light emitting layer 22 is made of a material that is not resistant to hydrochloric acid etching, such as InGaAlP, it is necessary to protect the material with a resist or the like in advance. A material that is resistant to etching, such as GaP or GaAsP, does not particularly require protection.
[0053]
The LED according to the first embodiment was mounted on a sheet, and various etchings were performed while changing the temperature of hydrochloric acid and the etching time, and it was confirmed that all the four inclined side surfaces were roughened. FIG. 6 is an SEM photograph showing irregularities in a roughened region.
[0054]
When a light output was measured by resin-molding this series of LEDs, a light output twice or more as high as that of an LED having a rectangular cross section was obtained. It can be seen that the roughening of the four inclined side surfaces further increased the light output by 50%.
[0055]
Here, if the difference between the heights of the valleys and peaks of the unevenness in the roughened region is in the range of about 0.1 to 5 μm, the above-described effect can be obtained. Since the light output decreases as the ratio deviates from this range, the range of about 0.1 to 5 μm is appropriate and preferable.
[0056]
This is because light is irregularly reflected by the uneven surface, and the light extraction efficiency from the element increases. However, the uneven surface having a fraction of the wavelength of light is almost the same as a mirror surface and several times the wavelength of light. This is because light is difficult to diffusely reflect on the uneven surface. From this, it is appropriate that the etching condition is about 70 ° C. for about 10 minutes.
[0057]
In a conventional LED having a rectangular cross section, which was tested at the same time, the vertical side surface was not roughened. In the inverted quadrangular pyramid-shaped LED, only two opposing side surfaces were roughened.
[0058]
This difference is explained as follows. In the case of etching with heated hydrochloric acid, the most roughened surface is the [111] P surface, and the [111] Ga surface, the (100) surface, the (110) surface, or a surface equivalent thereto is a rough surface. Does not change.
[0059]
FIG. 7 is a schematic diagram showing the relationship between the shape and the crystal orientation of the LED of the present invention. As shown in the figure, in the LED according to the first embodiment, a wafer having a (100) plane or a plane direction slightly inclined from the (100) plane is used, and four equivalent crystal planes whose inclined side surfaces are [111] P planes are used. That is, since it is composed of the (-1-1-1), (11-1), (1-11), and (-111) planes, or a plane slightly inclined therefrom, the entire surface is roughened. .
[0060]
On the other hand, in the above-mentioned inverted truncated pyramid-shaped LED, of the four inclined side surfaces, the surface close to (11-1) or (1-11), which is the [111] P surface, is roughened. The [111] Ga plane, which is near (111) and (1-1-1), was not roughened.
[0061]
The present invention is not limited to the above embodiment. That is, in the above-described first embodiment, an LED having four side surfaces has been described, but the present invention is also applicable to an LED having four or more even side surfaces. Also in this case, the first and second side surfaces having the inclined surfaces may be provided in line symmetry and the same number.
[0062]
In the first embodiment, the light emitting layer 22 is provided on the transparent substrate 21, and the LED having the four side surfaces 27, 28, 29, and 30 is processed by the V-shaped dicing blade 43. Although the method has been described, the shape and processing method of the LED are not limited thereto.
[0063]
For example, the position of the light emitting layer 22 may be on the upper surface or the lower surface of the transparent substrate 21 or any one of the positions between them. Further, it is needless to say that LEDs of various sizes and shapes can be realized by variously setting the thickness of the transparent substrate 21, the tip angle of the blade, the dicing pitch, and the uncut amount.
[0064]
Further, in the second embodiment, the case where the four side surfaces 27, 28, 29, and 30 are roughened has been described, but a partially rough surface may be used.
[0065]
Here, a GaP substrate has been described as an example, but it goes without saying that the present invention can be similarly applied to an LED using another semiconductor material.
[0066]
For example, depending on the type and plane orientation of the semiconductor material to be used, more side surfaces may be provided, or processing may be performed by combining techniques such as mesa etching, cleaving, oblique polishing, milling, and wire saw.
[0067]
【The invention's effect】
As described above, according to the semiconductor light emitting device and the semiconductor light emitting device of the present invention, high light output and high reliability can be achieved at the same time.
[Brief description of the drawings]
FIGS. 1A and 1B are views showing a semiconductor light emitting device according to a first embodiment of the present invention, wherein FIG. 1A is a plan view and FIG. 1B is along the line AA in FIG. FIG. 1C is a cross-sectional view taken along line BB of FIG. 1A.
FIG. 2 is a sectional view showing a semiconductor light emitting device according to the first embodiment of the present invention.
FIG. 3 is a view showing a dicing process of a wafer in a manufacturing process of the semiconductor light emitting device according to the first embodiment of the present invention.
FIG. 4 is a plan view showing a part of a diced wafer in a semiconductor device manufacturing process according to the first embodiment of the present invention.
FIG. 5 is an SEM photograph showing the appearance of the semiconductor light emitting device according to the first embodiment of the present invention.
FIG. 6 is an SEM photograph showing unevenness of a roughened region in the semiconductor light emitting device according to the second embodiment of the present invention.
FIG. 7 is a view showing a crystal orientation of an inclined side surface in a semiconductor light emitting device according to a second embodiment of the present invention.
FIG. 8 is a sectional view showing a conventional semiconductor light emitting device.
[Explanation of symbols]
1, 21 Transparent substrate 2, 22 Light emitting layer 3, 23 Upper electrode 4, 24 Lower electrode 25 Upper surface of transparent substrate 26 Lower surface of transparent substrate 27, 28 First side surface 29, 30 Second side surface 31, 32 Vertical side surface 33a, 33b Lead frame 34 Reflection cup 35 Gold wire 36 Transparent resin 37 Semiconductor light emitting device 41 Wafer on which semiconductor light emitting element is formed 42 Lower surface of wafer 43 Dicing blade 44 Upper surface of wafer

Claims (15)

A transparent substrate having translucency with respect to the emission wavelength,
A light emitting layer having a pn junction formed on the transparent substrate;
An electrode for electrically connecting to the light emitting layer;
With
A first side surface, wherein the side surface of the transparent substrate is a flared inclined surface from one main surface of the transparent substrate toward the other main surface;
A semiconductor light-emitting device comprising: a second side surface that is a splayed sloping surface from the other main surface toward the one main surface. The transparent substrate has four opposing side surfaces, two opposing side surfaces comprise the first side surface, and the other two opposing side surfaces comprise the second side surface. The semiconductor light emitting device according to claim 1. A vertical side surface is provided between at least one of the one main surface and the first side surface or between the other main surface and the second side surface. The semiconductor light emitting device according to claim 1. 4. The semiconductor according to claim 1, wherein an angle between a vertical direction of the transparent substrate and the first side surface and the second side surface is 20 to 40 degrees. 5. Light emitting element. 5. The semiconductor light emitting device according to claim 1, wherein a roughened region is provided on at least one of the first side surface and the second side surface. 6. element. 6. The semiconductor light emitting device according to claim 5, wherein the difference between the heights of the valleys and peaks of the irregularities in the roughened region is between 0.1 and 5 μm. A transparent substrate having a light-transmitting property with respect to the emission wavelength, and having four or more side faces,
A first electrode connected to one main surface of the transparent substrate;
A second electrode connected to the other main surface of the transparent substrate;
A light-emitting layer having a pn junction provided on the transparent substrate between the main surfaces;
With
Two or more side surfaces of the plurality of side surfaces have a first side surface that is a divergent inclined surface from one main surface toward the other main surface,
The remaining two or more side surfaces of the plurality of side surfaces have a second side surface that is a flared inclined surface from the other main surface toward the one main surface,
A semiconductor light emitting device, wherein the first side surface and the second side surface are provided in line symmetry. 8. The semiconductor light emitting device according to claim 7, wherein the first side surface and the second side surface have the same number. 9. The semiconductor light emitting device according to claim 8, wherein an angle between a vertical direction of the transparent substrate and the first side surface and the second side surface is 20 to 40 degrees. A transparent substrate having translucency with respect to the emission wavelength,
A light emitting layer having a pn junction formed on the transparent substrate;
An electrode for electrically connecting to the light emitting layer;
A semiconductor light emitting device having
A lead frame having one end electrically connected to the electrode of the semiconductor light emitting element;
Except for the other end of the lead frame, a transparent resin sealing the one end and the semiconductor light emitting element,
With
A first side surface, wherein the side surface of the transparent substrate is a flared inclined surface from one main surface of the transparent substrate toward the other main surface;
A semiconductor light emitting device comprising: a second side surface that is a splayed sloping surface from the other main surface toward the one main surface. The transparent substrate has four opposing side surfaces, two opposing side surfaces comprise the first side surface, and the other two opposing side surfaces comprise the second side surface. The semiconductor light emitting device according to claim 10. A vertical side surface is provided between at least one of the one main surface and the first side surface or between the other main surface and the second side surface. The semiconductor light emitting device according to claim 10. The semiconductor according to any one of claims 10 to 12, wherein an angle between a vertical direction of the transparent substrate and the first and second side surfaces is 20 to 40 degrees. Light emitting device. 14. The semiconductor light emitting device according to claim 10, wherein a roughened region is provided on at least one of the first side surface and the second side surface. apparatus. 15. The semiconductor light emitting device according to claim 14, wherein the difference between the heights of the valleys and peaks of the irregularities in the roughened region is between 0.1 and 5 [mu] m.

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