JP2004088133A - 半導体レーザ素子 - Google Patents
半導体レーザ素子 Download PDFInfo
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- JP2004088133A JP2004088133A JP2003416832A JP2003416832A JP2004088133A JP 2004088133 A JP2004088133 A JP 2004088133A JP 2003416832 A JP2003416832 A JP 2003416832A JP 2003416832 A JP2003416832 A JP 2003416832A JP 2004088133 A JP2004088133 A JP 2004088133A
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Abstract
【解決手段】InP基板1のほぼ中央部分に量子井戸層7を形成し、その左右両側に狭窄層8を形成する。量子井戸層7はN型クラッド層2と光閉じ込め層23と活性層24と光閉じ込め層25とP型クラッド層6との積層構造によって構成し、活性層24と光閉じ込め層23,25の厚みの総和を1000Å以上2000Å以下にして、光閉じ込め係数を小さくし、活性層24内に閉じ込められて活性化した光をクラッド層2,6側にしみ出すしみ出し量を大きくして活性層24およびしみ出し部分から放出する垂直方向のビームの広がり角を小さくしてほぼ真円に近いパターンモードのビームを出力させる。
【選択図】 図1
Description
2 N型クラッド層
6,11 P型クラッド層
7 量子井戸層
8 狭窄層
9 P型InP層
10 N型InP層
23,25 光閉じ込め層
24 活性層
Claims (3)
- InP基板上に複数のGa1−XInXAs1−YPY井戸層とバリヤ層からなる多重量子井戸を含む活性層と、該活性層を上下両側からサンドイッチ状に挟む光閉じ込め層とを有する半導体レーザ素子において、前記活性層を上下に挟むそれぞれの光閉じ込め層はバンドギャップ波長の異なる複数種類の層によって形成され、かつ、前記活性層と前記光閉じ込め層の厚さの総和を1000Å以上2000Å以下にしたことを特徴とする半導体レーザ素子。
- 半導体レーザ素子は励起光源用であって、光ファイバと光結合させて用いるものとした請求項1記載の半導体レーザ素子。
- 励起波長を1.48μm帯とした請求項2記載の半導体レーザ素子。
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JP2003416832A JP3691828B2 (ja) | 2003-12-15 | 2003-12-15 | 半導体レーザ素子 |
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JP2003416832A JP3691828B2 (ja) | 2003-12-15 | 2003-12-15 | 半導体レーザ素子 |
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JP2002341215A Division JP3572065B2 (ja) | 2002-11-25 | 2002-11-25 | 半導体レーザ素子 |
Publications (2)
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JP2004088133A true JP2004088133A (ja) | 2004-03-18 |
JP3691828B2 JP3691828B2 (ja) | 2005-09-07 |
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JP2003416832A Expired - Lifetime JP3691828B2 (ja) | 2003-12-15 | 2003-12-15 | 半導体レーザ素子 |
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JP3691828B2 (ja) | 2005-09-07 |
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