JP2004088084A5 - - Google Patents
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- JP2004088084A5 JP2004088084A5 JP2003175727A JP2003175727A JP2004088084A5 JP 2004088084 A5 JP2004088084 A5 JP 2004088084A5 JP 2003175727 A JP2003175727 A JP 2003175727A JP 2003175727 A JP2003175727 A JP 2003175727A JP 2004088084 A5 JP2004088084 A5 JP 2004088084A5
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003175727A JP4503246B2 (en) | 2002-06-25 | 2003-06-20 | Method for manufacturing semiconductor device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002183839 | 2002-06-25 | ||
| JP2003175727A JP4503246B2 (en) | 2002-06-25 | 2003-06-20 | Method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004088084A JP2004088084A (en) | 2004-03-18 |
| JP2004088084A5 true JP2004088084A5 (en) | 2006-08-03 |
| JP4503246B2 JP4503246B2 (en) | 2010-07-14 |
Family
ID=32071587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003175727A Expired - Fee Related JP4503246B2 (en) | 2002-06-25 | 2003-06-20 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4503246B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8525075B2 (en) | 2004-05-06 | 2013-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
| JP5250181B2 (en) * | 2004-05-06 | 2013-07-31 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| KR100689315B1 (en) | 2004-08-10 | 2007-03-08 | 엘지.필립스 엘시디 주식회사 | Device for crystallizing silicon thin layer and method for crystallizing using the same |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5723217A (en) * | 1980-07-18 | 1982-02-06 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5886717A (en) * | 1981-11-18 | 1983-05-24 | Nec Corp | Forming of single crystal silicon film |
| JPS58151042A (en) * | 1982-03-03 | 1983-09-08 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS61241909A (en) * | 1985-04-19 | 1986-10-28 | Agency Of Ind Science & Technol | Formation of soi crystal |
| JPH02143417A (en) * | 1988-11-24 | 1990-06-01 | Sharp Corp | Manufacture of semiconductor device |
| JPH05226790A (en) * | 1992-02-18 | 1993-09-03 | Hitachi Ltd | Laser annealer |
| JP3216861B2 (en) * | 1995-04-10 | 2001-10-09 | シャープ株式会社 | Method for forming polycrystalline silicon film and method for manufacturing thin film transistor |
| JPH11352420A (en) * | 1998-06-04 | 1999-12-24 | Sumitomo Heavy Ind Ltd | Homogenizer device with beam rotating function and laser beam machining device using it |
| JP2000243968A (en) * | 1999-02-24 | 2000-09-08 | Matsushita Electric Ind Co Ltd | Thin film transistor, manufacture thereof, liquid crystal display device using the same and manufacture thereof |
| JP2001156017A (en) * | 1999-11-29 | 2001-06-08 | Semiconductor Energy Lab Co Ltd | Laser device, method for heat treating by using laser beam and method for manufacturing semiconductor device |
| JP4836333B2 (en) * | 2000-01-28 | 2011-12-14 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| JP2001274433A (en) * | 2000-03-24 | 2001-10-05 | Japan Steel Works Ltd:The | Crystallizing method for silicon film, producing method for polycrystal silicon film and device using the same |
| JP4558140B2 (en) * | 2000-05-02 | 2010-10-06 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP4683761B2 (en) * | 2000-05-12 | 2011-05-18 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
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2003
- 2003-06-20 JP JP2003175727A patent/JP4503246B2/en not_active Expired - Fee Related