JP2004080005A

JP2004080005A - Semiconductor device, its manufacturing method and photosensitive liquid seal resin

Info

Publication number: JP2004080005A
Application number: JP2003170556A
Authority: JP
Inventors: Takashi Nakajima; 中島　▲高▼士
Original assignee: Individual
Current assignee: Individual
Priority date: 2002-06-17
Filing date: 2003-06-16
Publication date: 2004-03-11

Abstract

<P>PROBLEM TO BE SOLVED: To ease the stress of an external terminal connection part which is caused by a difference in thermal expansion coefficients between a semiconductor chip and a mounting substrate at the mounting of the semiconductor bare chip, to solve repair problems, and to easily connect an external terminal to an opening part obtained by partially exposing the seal resin. <P>SOLUTION: In a semiconductor device, a method for manufacturing the semiconductor device, photosensitive liquid seal resin, and a method for opening the seal resin, the semiconductor chip is previously processed by sealing processing, the sealed surface is partially opened, and an external terminal connected to the opened part is mounted on a mounting substrate through an external terminal having a core consisting of resin plated by a metal. Consequently, problems of repair can be solved, and stress caused by a difference in thermal expansion coefficients between the semiconductor chip and the mounting substrate can be eased. The inexpensive semiconductor device capable of easily connecting the external terminal to the part which is sealed with the seal resin and partially opened can be provided. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】本発明は半導体ベアチップが実装基板に搭載される場合の半導体装置およびその製造方法とその材料に関し、特に実装基板と半導体チップとの熱膨張係数差に起因する応力の低下と、半導体装置が不良の場合のリペアー性の向上を図った半導体装置およびその製造方法と、封止樹脂が開口され、開口された部分に外部端子を容易に取り付けることができる封止材料と封止
方法に関するものである。
【０００２】
【従来の技術および発明の解決すべき課題】従来、半導体ベアチップをそのまま基板に実装する半導体装置では、半導体ベアチップに外部端子として主に半田バンプを形成し、基板に搭載した後、熱リフローさせ、基板と半田バンプとを半田付けしたのちに、アンダーフィルと呼ばれる熱硬化性の封止樹脂を半導体チップと基板との間に流し込み、硬化させて完了させて来た。これにより半導体チップと基板との熱膨張係数差を樹脂によって押さえ込むことで、両者間の応力差による半田バンプのクラックや半田バンプの接合部の剥離の問題を解消してきた。しかしながらこの方法による応力差の押さえ込みには限度があり、約７ｍｍ角以上の大型の半導体チップには適用できないと言う問題が生じていた。また熱硬化性樹脂により半導体チップと基板とを固めてしまっているため、後でリペアー出来ないと言う問題も抱えていた。
【０００３】本発明による半導体装置および本発明による方法により製造された半導体装置では半導体チップにはすでに封止処理が施されていて、ここで言う封止処理が施されたものはスーパーＣＳＰ（チップ・サイズ・パッケージ）と呼ばれる半導体装置特開平１０−０７９３６２に既に存在するが、封止材料が熱硬化性であり、封止後に開口させることが困難であり、且つ封止厚が厚く、あらかじめ銅ポストと呼ばれるバンプ形成をしたのち、銅ポスト上面まで封止を行い、銅ポスト表面を露出させて外部端子である半田ボールを取り付けると言った処理が必要であった。この銅ポスト形成工程はアディティブ法と呼ばれる工法で形成される。あらかじめウエハーに感光性樹脂を塗布して、銅ポストを形成する部分を露光・現像処理によって開口させ、開口させた部分にメッキ法によって銅ポストを形成する、この後あらかじめウエハーに塗布された感光性樹脂は剥離・除去される、と言った複雑な形成工程と感光性樹脂と言う高価な材料を必要とする。このために半導体装置自体が高価になり普及しないと言う課題を抱えていた。また半導体チップと実装基板との熱膨張係数の違いによる応力を吸収する機構を持たないために、実装搭載チップサイズに制限があり約７ｍｍ角以上の大型の半導体チップには適応できないと言う問題が生じていた。
【０００４】しかし感光性液状封止樹脂を用いることで封止厚が薄く、かつ露光・現像により外部端子を取り付けるための開口部を開けることによって、外部端子を開口部に容易に取り付けることができ、低コスト化を可能にする。かつ封止済みであるためにリペアーすることもできる。
【０００５】また、半導体チップと実装基板との熱膨張係数差に起因して外部端子部に生じる応力に対しては、金属がめっきされた樹脂からなる芯をもつ外部端子を用いて緩和し、かつ大型チップに対しては外部端子の足の長さを長くさせることで、応力による故障に至る頻度は足の長さに反比例することは、既に既知であって、芯である樹脂を簡単に長くでき、応力の低減が可能であり、大型チップへの対応を解決する簡易な半導体装置および製造方法と、封止後に開口させるための感光性液状封止樹脂材料及び開口させるための方法を提供することを目的としている。
【０００６】
【課題を解決するための手段】上記課題を解決するために、本発明では半導体チップにあらかじめ封止処理をほどこし、その封止樹脂が開口され、開口された部分に取り付けた外部端子が、金属がめっきされた樹脂からなる芯をもつ複数の外部端子を具備する。この構成により半導体チップと実装基板との熱膨張係数差に応じた応力を緩和することができる。かつ封止済みであるため、容易にリペアーができる。
【０００７】また、本発明では、半導体装置の製造方法において、感光性樹脂を主体とした液状樹脂からなる封止材でウエハーの配線面を封止し、外部端子を取り付けるための開口部を露光・現像によって開口させた封止工程を具備する。この構成により、開口部に容易に外部端子を取り付けることができ、かつウエハー上での一括封止および一括開口処理が可能となる。
【０００８】また、本発明では、半導体装置の製造方法において、外部端子を取り付けるため、開口部を含む封止面に高弾性率をもつ樹脂フィルムを貼り付け、そのフィルム部分において、外部端子を形成するために端子の外周をくりぬき、そのくりぬいた部分を含むフィルム表面全体をめっきし、メタル形成してのち、全体部分のメタル付きフィルムを剥離する。この場合めっきによるメタル厚は数ミクロン・メートル以下にコントロールされ、薄くかつ弱く、前記フィルムを剥離したときにはメタル付き外部端子のみを残して剥離され、この残ったメタル付外部端子を外部端子とする形成工程とを具備する。この構成により、ウエハー上での一括外部端子形成処理と、樹脂フィルム厚を厚くすることで、外部端子の長さを容易に長くすることが可能となる。
【０００９】また、本発明では、半導体素子の遮光のための粉末を含有した感光性液状封止樹脂を具備する。この構成により封止樹脂に露光・現像による開口部形成処理が可能となり、さらにこのことによって、開口部に容易に外部端子を取り付けることができる。
【００１０】また本発明の半導体装置における製造方法では、液状封止樹脂をスクリーン印刷する。このことで封止厚が薄く、かつ液状封止樹脂をスクリーン印刷で塗布すると同時に、外部端子を取り付けるための開口部を、スクリーン印刷で同時形成することによって、前記銅ポストの形成なしで外部端子を開口部の配線層に直接取り付けることができ、銅ポスト形成工程を不用にすることができる。
【００１１】また、本発明では封止面をレーザーによって開口させ開口部を形成することもできる。このことによって、前記銅ポストの形成なしで外部端子を開口部の配線層に直接取り付けることができ、銅ポスト形成工程を不用にすることができる。
【００１２】また、本発明の半導体装置における製造方法では、液状封止樹脂をスクリーン印刷する。このときに外部端子を取り付けるための開口部もスクリーン印刷によって同時形成するのであるが、液状樹脂であるために濡れ広がり開口部をふさぐことを防ぐための感光性樹脂によるダム・ランドを開口部にあらかじめ形成しておきスクリーン印刷する。このことで開口部に液状封止樹脂が濡れ広がらなくなる。のちにこのダム・ランドは除去することで封止面に微細な開口部を形成できる。
【００１３】また、本発明の半導体装置における製造方法では、ウエハーの再配線上で開口部にあたる部分に感光性樹脂によるダム・ランドを設け、これをウエハーと平板で挟み込み、生じたギャップに毛細管現象とバキュームによる気圧差を利用して、簡単に液状封止樹脂を充填させることができる。充填させたあとは充填材を硬化させ、さらにダム・ランドを除去することで封止面に微細な開口部を形成できる。
【００１４】本発明の半導体装置では、すでに封止済みであるため、基板に実装され、問題のあった半導体装置は外部端子と基板とが半田により接合された部分に熱を加えるだけで半田が溶融して簡単にリペアーすることが出来る。
【００１５】また、本発明の半導体装置では、金属がめっきされた高弾性率を持つ樹脂からなる芯をもつ外部端子を具備しており、半導体チップの大きさに応じて外部端子の足の長さを長くすることにより、半導体チップの大きさに比例する応力を十分に緩和することができる。このため大型の半導体チップに対しても十分に適用可能となる。この場合の外部端子の長さは、大型の半導体チップを１５ｍｍ角として、およそ１ｍｍ程度で十分に対応可能なことが算出できるし、実用上はもっと短くて良いかもしれない。
【００１６】また、本発明の半導体装置における製造方法では、複数の外部端子を一括して形成することができるので、生産性も良く、ウエハー工程の延長線上でウエハーごとの一括アッセンブリーで製造できる。
【００１７】また、本発明の感光性液状封止樹脂では、液状であるため薄く封止することができ、かつ露光・現像によって開口することができる。この作用のため開口部に外部端子が、銅ポストなるバンプ形成なしで形成できる。この場合の封止厚であるが０．０１ｍｍから０．１ｍｍ程度が液状樹脂の粘度調整によって制御できるし、この感光性封止樹脂は感光性ポリイミドなどの液状樹脂に、カーボンなどの遮光性粉末を１５％から８５％程度含有させて製造されたものが使用される。また粉末粒径は数ナノから数十ミクロン・メートルの微粉末が使用される。なお遮光性の粉末が含有されていても、封止厚みが薄いので、自然光に比べ光量の多い露光時の光は十分に透過できることにより、露光・現像による処理が可能となる。
【００１８】また、本発明の液状封止樹脂では、液状であるため薄く封止することができ、かつスクリーン印刷によって開口部を同時形成することができる。この作用のため開口部に外部端子を、銅ポストなるバンプ形成なしで取り付けることができる。この場合の封止厚であるが０．０１ｍｍから０．１ｍｍ程度がスクリーン厚の調整によって制御できるし、開口部直径も液状封止樹脂の粘度を制御することで０．０５ｍｍ程度の微小開口部まで形成できる。
【００１９】また、本発明のレーザーによる開口部形成方法では直径０．０１ｍｍ程度の極微小開口部まで形成できる。
【００２０】また、本発明のスクリーン印刷とダム・ランドによる開口部形成方法では切り口の整った開口部が形成できる。この場合のダム・ランドの厚みは１０から６０μｍが最適である。
【００２１】また、本発明のダム・ランドと平板による開口部形成方法では微細な開口部が形成できる。この場合のダム・ランドの厚みは１０から６０μｍが最適である。
【００２２】
【発明の実施の形態】図１に示すように、本発明による半導体装置が基板に実装される形態においては、半導体装置は封止面３が開口１３され、開口された部分に取り付けた外部端子が、金属５がめっきされた樹脂からなる芯４をもつ複数の外部端子を具備する。
【００２３】本発明による半導体装置を基板に実装する場合、図４のように、半導体装置は金属がめっきされた樹脂からなる芯をもつ外部端子により基板に半田１２を用いて基板に表面実装されるので、半田１２を再溶融させることによって、不良の場合のリペアーもできるし、外部端子の芯に使われた樹脂の弾性力によって、半導体チップと実装基板との熱膨張係数差による応力に対応できることとなる。また感光性封止樹脂によって容易に封止部を開口させることができ、開口部に容易に外部端子を取り付けることができる。
【００２４】以下、本発明の実施例について図面を用いて詳細に説明する。
【００２５】
【実施例１】図１および図２は、本発明の実施例１に関する断面図である。
【００２６】まず、半導体素子および配線層形成済みの半導体ウエハーに、スピンコート法などにより全面に感光性液状封止樹脂を塗布し、露光・現像を行い、外部端子を形成するための開口部を形成し、硬化させて封止処理を完了する。なおあらかじめ配線層２あるいは開口部の配線層２に樹脂フィルムとの粘着性の良いめっきを施すこともできる。
【００２７】その後、高弾性の樹脂フィルム４を封止面全面に貼り付け、もちろんこの樹脂フィルム４には粘着性を持つことは形成上不可欠であって、外部端子となる周辺をレーザー等によってくりぬく。次にくりぬいた部分６を含む樹脂フィルム表面全体を金属めっきし、もちろんこの金属めっき５は何層から形成されても良いがその表面層は半田との濡れ性の良いめっき、あるいは半田がめっきされることが望ましい。次に外部端子となる部分を残して全体のめっき付樹脂フィルムを封止面から剥離する。また樹脂フィルム剥離後の外部端子にさらに半田濡れ性の良いめっきあるいは半田をめっきしてもよい。そうして個々の半導体装置にするためにダイシング８がなされ、形成されたものが図１および図２の半導体装置である。
【００２８】なお、図４は図１の半導体装置が、外部端子面を下向きにして基板に半田を使い表面実装された断面を示す。
【００２９】
【実施例２】次に、図３は第２の実施例である。
【００３０】感光性液状封止樹脂に開口部が形成された部分に、球状樹脂４を芯とする外部端子に半田などの金属５がめっきされ、それを開口部の配線層に対し半田付けしたものである。この場合半田は高融点半田であり、半田などの金属５の下地部には銅・ニッケルなどの他の金属めっきがされていてもかまわない。また、もちろん開口部分の配線層あるいは封止層下の配線層には、半田などとの濡れ性の良い金属や、配線層と半田とのバリアーとしての下地金属がめっきされていても良い。
【００３１】
【実施例３】
【００３２】図５は本発明の第３の製造方法の実施例を示す。液状樹脂からなる封止材でウエハーの配線面をスクリーン印刷により封止し、外部端子を取り付けるための開口部を同じくスクリーン印刷によって、同時開口させた封止工程を具備する。外部端子は開口された部分のむき出しにされた再配線層の金属に直接接続される。この場合再配線層に外部端子の金属との濡れ性の良い他の金属及び半田とのバリアーとしての下地金属が被覆されていても良い。
【００３３】
【実施例４】
【００３４】図６は本発明の第４の製造方法の実施例を示す。樹脂からなる封止材でウエハーの配線面を封止し、外部端子を取り付けるための開口部をレーザーによって、開口させた封止・開口工程を具備する。外部端子は開口された部分のむき出しにされた再配線層の金属に直接接続される。この場合再配線層に外部端子の金属との濡れ性の良い他の金属及び半田とのバリアーとしての下地金属が被覆されていても良い。
【００３５】
【実施例５】
【００３６】図７は本発明の第５の製造方法の実施例を示す。液状樹脂からなる封止材でウエハーの配線面をスクリーン印刷により封止し、外部端子を取り付けるための開口部を同じくスクリーン印刷によって、同時開口させる場合にあらかじめ開口させる部位に感光性樹脂によってダム・ランドを形成しておき、この上からスクリーン印刷を施す。このことによって液状樹脂からなる封止材が開口部分に濡れ広がることを防ぐ役割をする。のちに液状樹脂を硬化したのちケミカル処理によって、この感光性樹脂からなるダム・ランドを除去する。これにより封止樹脂面に開口部を形成させた封止工程が具備される。さらに外部端子は開口された部分のむき出しにされた再配線層の金属に直接接続される。この場合再配線層に外部端子の金属との濡れ性の良い他の金属及び半田とのバリアーとしての下地金属が被覆されていても良い。
【００３７】
【実施例６】
【００３８】図８は本発明の第６の製造方法の実施例を示す。ウエハーの再配線上で開口部にあたる部分に感光性樹脂によるダム・ランドを設け、これをウエハーと平板で挟み込み、生じたギャップに毛細管現象とバキュームによる気圧差を利用して、簡単に液状封止樹脂を充填させることができる。充填させたあとは充填材を硬化させ、そのあと平板を剥離して、さらにダム・ランドをケミカル処理によって除去することで封止面に微細な開口部を形成できる。これにより封止樹脂面に開口部を形成させた封止工程が具備される。さらに外部端子は開口された部分のむき出しにされた再配線層の金属に直接接続される。この場合再配線層に外部端子の金属との濡れ性の良い他の金属及び半田とのバリアーとしての下地金属が被覆されていても良い。
【００３９】
【発明の効果】本発明による半導体装置では、すでに封止済みであるため、基板に実装された問題のあった半導体装置は外部端子と基板とが半田により接合された部分に熱を加えるだけで半田が溶融して簡単にリペアーすることが出来る。
【００４０】また、本発明による半導体装置では、金属がめっきされた高弾性率を持つ樹脂からなる芯をもつ外部端子を具備しており、半導体チップと実装基板との熱膨張係数差に起因する応力を緩和することができ、かつ半導体チップの大きさに応じて外部端子の足の長さを長くすることにより、半導体チップの大きさに比例する応力を十分が緩和することができるため、大型の半導体チップに対しても十分に適用できる。
【００４１】また、本発明の半導体装置における製造方法では、複数の外部端子を一括して形成することができるので、生産性も良く、ウエハー工程の延長線上でウエハーごとの一括アッセンブリーで製造できる。
【００４２】また、本発明の感光性液状封止樹脂では、液状であるため薄く封止することができ、且つ露光・現像の工程によって開口することができる。この作用のため開口部に外部端子が容易に取り付けることができる。
【００４３】また、本発明の半導体装置における製造方法では、封止樹脂を開口させて再配線層に外部端子を取り付けるため、銅ポストなる余分な材料および工程を省くことができ低コスト化への道を開くものである。
【図面の簡単な説明】
【図１】図１は本発明の第１の実施例の半導体装置を示す断面図である。
【図２】図２は本発明の第１の実施例の製造工程を示す断面図である。
【図３】図３は本発明の第２の実施例を示す断面図である。
【図４】図４は本発明の第１の実施例の基板への実装を示す断面図である。
【図５】図５は本発明の第３の実施例の製造方法を示す断面図である。
【図６】図６は本発明の第４の実施例の製造方法を示す断面図である。
【図７】図７は本発明の第５の実施例の製造方法を示す断面図である。
【図８】図８は本発明の第６の実施例の製造方法を示す断面図である。
【符号の説明】
１　　　半導体チップ
２　　　再配線層
３　　　封止樹脂（感光性封止樹脂含む）
４　　　　高弾性樹脂
５　　　　金属めっき
６　　　高弾性樹脂のくりぬき部
７　　　高弾性樹脂フィルム
８　　　ダイシング形成部
９　　　半導体ウエハー
１０　　　実装基板
１１　実装基板上の配線ランド
１２　半田
１３　開口部
１４　スクリーン開口部
１５　スクリーンマスク部
１６　液状封止樹脂
１７　スキージー
１８　レーザー光
１９　ダム・ランド
２０　平板[0001]
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor bare chip is mounted on a mounting board, a method of manufacturing the same, and a material therefor, and more particularly to a reduction in stress caused by a difference in thermal expansion coefficient between the mounting board and the semiconductor chip. And a semiconductor device and a method of manufacturing the same, which improve repairability when the semiconductor device is defective, and a sealing material and a sealing material in which a sealing resin is opened and an external terminal can be easily attached to the opened portion. It relates to the stopping method.
[0002]
2. Description of the Related Art Conventionally, in a semiconductor device in which a semiconductor bare chip is directly mounted on a substrate, solder bumps are mainly formed as external terminals on the semiconductor bare chip, and after being mounted on the substrate, heat reflow is performed. After soldering the substrate and the solder bumps, a thermosetting sealing resin called underfill is poured between the semiconductor chip and the substrate and cured to complete the process. Thus, by suppressing the difference in the coefficient of thermal expansion between the semiconductor chip and the substrate with the resin, the problems of cracks in the solder bumps and separation of the joints of the solder bumps due to the stress difference between the two have been solved. However, there is a limit in suppressing the stress difference by this method, and there is a problem that the method cannot be applied to a large semiconductor chip having a size of about 7 mm square or more. Further, since the semiconductor chip and the substrate are hardened by the thermosetting resin, there is a problem that the semiconductor chip and the substrate cannot be repaired later.
In a semiconductor device according to the present invention and a semiconductor device manufactured by the method according to the present invention, a semiconductor chip has already been subjected to a sealing process, and the semiconductor device subjected to the sealing process is referred to as a super CSP (chip). A semiconductor device called “size / package” already exists in JP-A-10-079362, but the sealing material is thermosetting, it is difficult to open after sealing, and the sealing thickness is large. After forming a bump called a post, it was necessary to perform a process of sealing up to the upper surface of the copper post, exposing the surface of the copper post, and attaching a solder ball as an external terminal. This copper post forming step is formed by a method called an additive method. A photosensitive resin is applied to the wafer in advance, a portion where a copper post is to be formed is opened by exposure and development processing, and a copper post is formed in the opened portion by a plating method. The resin requires a complicated forming process in which the resin is peeled off and removed, and an expensive material such as a photosensitive resin. For this reason, there is a problem that the semiconductor device itself becomes expensive and does not spread. In addition, since there is no mechanism to absorb the stress due to the difference in the thermal expansion coefficient between the semiconductor chip and the mounting board, the size of the mounting chip is limited and it cannot be applied to a large semiconductor chip of about 7 mm square or more. Had occurred.
However, by using a photosensitive liquid sealing resin, the sealing thickness is small, and by opening an opening for mounting the external terminal by exposure and development, the external terminal can be easily attached to the opening. , Enabling cost reduction. And since it has been sealed, it can be repaired.
[0005] Further, the stress generated in the external terminal portion due to the difference in thermal expansion coefficient between the semiconductor chip and the mounting board is mitigated by using an external terminal having a core made of a metal-plated resin, It is already known that by increasing the length of the external terminal feet for large chips, the frequency of failure due to stress is inversely proportional to the length of the feet. Provided are a simple semiconductor device and a manufacturing method which can be made longer and can reduce stress, and which can cope with a large chip, a photosensitive liquid sealing resin material for opening after sealing, and a method for opening. It is intended to be.
[0006]
In order to solve the above-mentioned problems, in the present invention, a semiconductor chip is subjected to a sealing process in advance, the sealing resin is opened, and an external terminal attached to the opened portion is made of metal. Are provided with a plurality of external terminals having a core made of plated resin. With this configuration, the stress according to the difference in thermal expansion coefficient between the semiconductor chip and the mounting board can be reduced. And since it has been sealed, it can be easily repaired.
According to the present invention, in a method of manufacturing a semiconductor device, a wiring surface of a wafer is sealed with a sealing material made of a liquid resin mainly composed of a photosensitive resin, and an opening for mounting an external terminal is exposed. -A sealing step opened by development is provided. With this configuration, external terminals can be easily attached to the opening, and batch sealing and batch opening processing on the wafer can be performed.
According to the present invention, in a method of manufacturing a semiconductor device, a resin film having a high elastic modulus is attached to a sealing surface including an opening to attach an external terminal, and the external terminal is formed in the film portion. For this purpose, the outer periphery of the terminal is hollowed out, the entire surface of the film including the hollowed out portion is plated, metal is formed, and then the metalized film of the entire portion is peeled off. In this case, the metal thickness by plating is controlled to several microns or less, is thin and weak, and when the film is peeled, it is peeled off leaving only the external terminal with metal, and the remaining external terminal with metal is used as the external terminal. And a step. With this configuration, it is possible to easily increase the length of the external terminal by forming the external terminal collectively on the wafer and increasing the thickness of the resin film.
Further, the present invention comprises a photosensitive liquid sealing resin containing a powder for shielding the semiconductor element from light. With this configuration, an opening can be formed in the sealing resin by exposure and development. Further, external terminals can be easily attached to the opening.
In the method of manufacturing a semiconductor device according to the present invention, a liquid sealing resin is screen-printed. As a result, the sealing thickness is small, and the liquid sealing resin is applied by screen printing, and at the same time, the opening for attaching the external terminal is simultaneously formed by screen printing, so that the external terminal can be formed without forming the copper post. Can be directly attached to the wiring layer in the opening, and the copper post forming step can be omitted.
In the present invention, an opening may be formed by opening the sealing surface with a laser. Thus, the external terminals can be directly attached to the wiring layer in the opening without forming the copper post, and the copper post forming step can be omitted.
In the method of manufacturing a semiconductor device according to the present invention, a liquid sealing resin is screen-printed. At this time, the opening for attaching the external terminal is also formed simultaneously by screen printing, but since it is a liquid resin, the dam land made of photosensitive resin to prevent it from spreading and blocking the opening is formed in the opening. Formed in advance and screen printed. As a result, the liquid sealing resin does not spread over the opening. By removing the dam land later, a fine opening can be formed in the sealing surface.
In the method of manufacturing a semiconductor device according to the present invention, a dam land made of a photosensitive resin is provided in a portion corresponding to an opening on the rewiring of a wafer, and the dam land is sandwiched between the wafer and a flat plate. The liquid sealing resin can be easily filled by utilizing the pressure difference caused by the pressure and the vacuum. After filling, the filler is cured, and the dam land is removed to form a fine opening on the sealing surface.
In the semiconductor device of the present invention, since the semiconductor device has already been sealed, it is mounted on the substrate, and the problematic semiconductor device is only heated by applying heat to the portion where the external terminal and the substrate are joined by solder. Can be easily repaired by melting.
Further, the semiconductor device of the present invention has external terminals having a core made of resin plated with metal and having a high modulus of elasticity, and the length of the external terminals depends on the size of the semiconductor chip. By increasing the length, the stress proportional to the size of the semiconductor chip can be sufficiently reduced. Therefore, it can be sufficiently applied to a large semiconductor chip. In this case, it is possible to calculate that the length of the external terminal can be sufficiently dealt with about 1 mm when a large semiconductor chip is 15 mm square, and it may be shorter in practical use.
In the method of manufacturing a semiconductor device according to the present invention, a plurality of external terminals can be formed collectively, so that productivity can be improved, and manufacturing can be performed by a collective assembly for each wafer on an extension of the wafer process.
The photosensitive liquid sealing resin of the present invention is liquid and can be thinly sealed and can be opened by exposure and development. Due to this function, external terminals can be formed in the openings without forming bumps which are copper posts. In this case, the sealing thickness can be controlled from about 0.01 mm to about 0.1 mm by adjusting the viscosity of the liquid resin, and the photosensitive sealing resin is made of a liquid resin such as a photosensitive polyimide or a light-shielding powder such as carbon. Is used containing about 15% to 85%. Further, a fine powder having a particle size of several nanometers to several tens of micrometers is used. Even if light-shielding powder is contained, since the sealing thickness is small, light at the time of exposure, which has a larger amount of light than natural light, can be sufficiently transmitted, thereby enabling processing by exposure and development.
Further, the liquid sealing resin of the present invention is liquid and can be thinly sealed, and can simultaneously form openings by screen printing. Due to this effect, the external terminal can be attached to the opening without forming a copper post bump. In this case, the sealing thickness is about 0.01 mm to about 0.1 mm, which can be controlled by adjusting the screen thickness. The opening diameter can be controlled to about 0.05 mm by controlling the viscosity of the liquid sealing resin. Can be formed up to
In the method of forming an opening by using a laser according to the present invention, it is possible to form a very small opening having a diameter of about 0.01 mm.
In the method of forming an opening by screen printing and dam land according to the present invention, an opening having a well-cut edge can be formed. In this case, the thickness of the dam land is optimally 10 to 60 μm.
In the method of forming an opening using a dam land and a flat plate according to the present invention, a fine opening can be formed. In this case, the thickness of the dam land is optimally 10 to 60 μm.
[0022]
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in FIG. 1, when a semiconductor device according to the present invention is mounted on a substrate, the semiconductor device has an opening 13 having a sealing surface 3 and external terminals attached to the opening. Has a plurality of external terminals having a core 4 made of resin plated with metal 5.
When the semiconductor device according to the present invention is mounted on a substrate, as shown in FIG. 4, the semiconductor device is surface-mounted on the substrate by using solder 12 on the substrate by external terminals having a core made of resin plated with metal. Therefore, by re-melting the solder 12, repair in case of failure can be performed, and due to the elastic force of the resin used for the core of the external terminal, it can cope with the stress due to the difference in thermal expansion coefficient between the semiconductor chip and the mounting board You can do it. In addition, the sealing portion can be easily opened by the photosensitive sealing resin, and the external terminal can be easily attached to the opening.
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0025]
Embodiment 1 FIGS. 1 and 2 are sectional views of Embodiment 1 of the present invention.
First, a photosensitive liquid sealing resin is applied to the entire surface of a semiconductor wafer on which a semiconductor element and a wiring layer have been formed by a spin coating method or the like, and is exposed and developed to form an opening for forming an external terminal. Form and cure to complete the sealing process. The wiring layer 2 or the wiring layer 2 in the opening may be plated in advance with good adhesion to the resin film.
Thereafter, a highly elastic resin film 4 is adhered to the entire surface of the sealing surface. Of course, it is essential for the resin film 4 to have adhesiveness in forming the resin film 4, and the periphery of the external terminal is cut out with a laser or the like. . Next, the entire surface of the resin film including the hollow portion 6 is metal-plated. Of course, the metal plating 5 may be formed of any number of layers, but the surface layer is plated with good wettability with solder or plated with solder. Is desirable. Next, the entire plated resin film is peeled off from the sealing surface except for a portion to be an external terminal. Further, the external terminals after peeling the resin film may be further plated with solder having good wettability or plated with solder. Then, dicing 8 is performed to obtain individual semiconductor devices, and the formed semiconductor device is the semiconductor device shown in FIGS.
FIG. 4 shows a cross section in which the semiconductor device of FIG. 1 is surface-mounted by using solder on a substrate with the external terminal surface facing down.
[0029]
Embodiment 2 Next, FIG. 3 shows a second embodiment.
At the portion where the opening is formed in the photosensitive liquid sealing resin, a metal 5 such as solder is plated on an external terminal having the spherical resin 4 as a core, and this is soldered to the wiring layer of the opening. Things. In this case, the solder is a high melting point solder, and the metal 5 such as solder may be plated with another metal such as copper or nickel. The wiring layer in the opening or the wiring layer below the sealing layer may be plated with a metal having good wettability with solder or a base metal as a barrier between the wiring layer and solder.
[0031]
Embodiment 3
FIG. 5 shows an embodiment of the third manufacturing method of the present invention. The method includes a sealing step in which the wiring surface of the wafer is sealed with a sealing material made of a liquid resin by screen printing, and openings for attaching external terminals are also simultaneously opened by screen printing. The external terminal is directly connected to the metal of the exposed redistribution layer at the opening. In this case, the rewiring layer may be coated with another metal having good wettability with the metal of the external terminal and a base metal as a barrier with solder.
[0033]
Embodiment 4
FIG. 6 shows an embodiment of the fourth manufacturing method of the present invention. The method includes a sealing / opening step in which the wiring surface of the wafer is sealed with a sealing material made of a resin, and an opening for attaching an external terminal is opened by a laser. The external terminal is directly connected to the metal of the exposed redistribution layer at the opening. In this case, the rewiring layer may be coated with another metal having good wettability with the metal of the external terminal and a base metal as a barrier with solder.
[0035]
Embodiment 5
FIG. 7 shows an embodiment of the fifth manufacturing method of the present invention. The wiring surface of the wafer is sealed by screen printing with a sealing material made of liquid resin, and the openings for attaching the external terminals are also screen printed. A land is formed, and screen printing is performed on the land. This serves to prevent the sealing material made of the liquid resin from spreading to the opening. After the liquid resin is cured, the dam land made of the photosensitive resin is removed by a chemical treatment. Thereby, a sealing step of forming an opening in the sealing resin surface is provided. Further, the external terminal is directly connected to the metal of the exposed rewiring layer at the opening. In this case, the rewiring layer may be coated with another metal having good wettability with the metal of the external terminal and a base metal as a barrier with solder.
[0037]
Embodiment 6
FIG. 8 shows an embodiment of the sixth manufacturing method of the present invention. A dam land made of photosensitive resin is provided in the area corresponding to the opening on the rewiring of the wafer, sandwiched between the wafer and the flat plate, and the liquid gap is easily sealed by using the capillary phenomenon and the pressure difference due to vacuum in the resulting gap Resin can be filled. After filling, the filler is cured, the flat plate is peeled off, and the dam land is removed by a chemical treatment, whereby a fine opening can be formed in the sealing surface. Thereby, a sealing step of forming an opening in the sealing resin surface is provided. Further, the external terminal is directly connected to the metal of the exposed rewiring layer at the opening. In this case, the rewiring layer may be coated with another metal having good wettability with the metal of the external terminal and a base metal as a barrier with solder.
[0039]
Since the semiconductor device according to the present invention has already been sealed, the problematic semiconductor device mounted on the substrate only needs to apply heat to the portion where the external terminals and the substrate are joined by solder. The solder melts and can be easily repaired.
Further, the semiconductor device according to the present invention has external terminals having a core made of a resin plated with metal and having a high elastic modulus, which is caused by a difference in thermal expansion coefficient between the semiconductor chip and the mounting substrate. The stress can be relieved, and by increasing the length of the foot of the external terminal according to the size of the semiconductor chip, the stress proportional to the size of the semiconductor chip can be sufficiently reduced. Can be sufficiently applied to the semiconductor chip.
In the method of manufacturing a semiconductor device according to the present invention, a plurality of external terminals can be collectively formed, so that the productivity is good and the manufacturing can be performed by a collective assembly for each wafer on an extension of the wafer process.
Further, since the photosensitive liquid sealing resin of the present invention is liquid, it can be thinly sealed and can be opened by exposure and development steps. Due to this action, the external terminal can be easily attached to the opening.
In the method of manufacturing a semiconductor device according to the present invention, since an external terminal is attached to the rewiring layer by opening the sealing resin, an unnecessary material and a process for forming a copper post can be omitted, and cost reduction can be achieved. It opens the way.
[Brief description of the drawings]
FIG. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention.
FIG. 2 is a sectional view showing a manufacturing process of the first embodiment of the present invention.
FIG. 3 is a sectional view showing a second embodiment of the present invention.
FIG. 4 is a cross-sectional view showing mounting on a substrate according to the first embodiment of the present invention.
FIG. 5 is a sectional view showing a manufacturing method according to a third embodiment of the present invention.
FIG. 6 is a sectional view showing a manufacturing method according to a fourth embodiment of the present invention.
FIG. 7 is a sectional view showing a manufacturing method according to a fifth embodiment of the present invention.
FIG. 8 is a sectional view showing a manufacturing method according to a sixth embodiment of the present invention.
[Explanation of symbols]
Reference Signs List 1 semiconductor chip 2 rewiring layer 3 sealing resin (including photosensitive sealing resin)
Reference Signs List 4 High elastic resin 5 Metal plating 6 High elastic resin cutout 7 High elastic resin film 8 Dicing forming section 9 Semiconductor wafer 10 Mounting substrate 11 Wiring land on mounting substrate 12 Solder 13 Opening 14 Screen opening 15 Screen mask 16 Liquid sealing resin 17 Squeegee 18 Laser beam 19 Dam land 20 Flat plate

Claims

A semiconductor device in which a semiconductor chip is sealed with a sealing resin, the sealing resin is opened, and an external terminal attached to the opened portion has a plurality of external terminals having a core made of a metal-plated resin. .

In a method of manufacturing a semiconductor device, a sealing material made of a liquid resin mainly composed of a photosensitive resin is used to seal a wiring surface of a wafer, and an opening for mounting an external terminal is opened by exposure and development. A method for manufacturing a semiconductor device comprising steps.

In the method for manufacturing a semiconductor device, a resin film having a high elastic modulus is attached to a sealing surface including an opening to attach an external terminal, and in the film portion, an outer periphery of the terminal is cut out to form an external terminal; A semiconductor device comprising an external terminal forming step in which the entire surface of the film including the hollowed portion is plated and metal is formed, and then the film with the metal is entirely peeled off, leaving only the external terminals with metal as external terminals. Manufacturing method.

A photosensitive liquid sealing resin containing a powder for shading semiconductor elements.

The method for manufacturing a semiconductor device includes a sealing step of sealing the wiring surface of the wafer with a sealing material made of a liquid resin by screen printing, and simultaneously opening openings for attaching external terminals by screen printing. Semiconductor device manufacturing method.

In a method of manufacturing a semiconductor device, a method of manufacturing a semiconductor device including a sealing / opening step in which a wiring surface of a wafer is sealed with a sealing material made of a resin, and an opening for attaching an external terminal is opened by a laser. Method.

6. The method for manufacturing a semiconductor device according to claim 5, wherein the wiring surface of the wafer is sealed by screen printing with a sealing material made of a liquid resin, and openings for attaching external terminals are also simultaneously opened by screen printing. A dam land made of a photosensitive resin is provided in advance in the opening portion, and screen printing is performed on the dam land so that the opening portion is prevented from being wet and spread by the liquid resin, and the opening portion is prevented from being blocked. A method of manufacturing a semiconductor device, comprising a step of removing the photosensitive resin and providing an opening in a sealing surface.

In the method of manufacturing a semiconductor device, when the wiring surface of the wafer is sealed with an encapsulant made of a liquid resin and an opening is provided, dam lands are provided in advance in the opening by a photosensitive resin, and the projection-formed wafer and the flat plate are provided. Were stacked with the protrusions facing the flat plate, and a gap material corresponding to the thickness of the protrusion between the wafer and the flat plate was filled with a sealing material made of a liquid resin by utilizing a pressure difference due to capillary action and vacuum, and was cured. A method of manufacturing a semiconductor device, comprising a sealing step in which an opening is formed by removing a flat plate and removing a dam land afterward.