JP2004063995A - 半導体装置及び半導体装置の製造方法 - Google Patents

半導体装置及び半導体装置の製造方法 Download PDF

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Publication number
JP2004063995A
JP2004063995A JP2002223475A JP2002223475A JP2004063995A JP 2004063995 A JP2004063995 A JP 2004063995A JP 2002223475 A JP2002223475 A JP 2002223475A JP 2002223475 A JP2002223475 A JP 2002223475A JP 2004063995 A JP2004063995 A JP 2004063995A
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Japan
Prior art keywords
wiring
semiconductor device
trench
insulating film
conductive film
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JP2002223475A
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Japanese (ja)
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JP2004063995A5 (https=
Inventor
Muneyuki Matsumoto
宗之 松本
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority to JP2002223475A priority Critical patent/JP2004063995A/ja
Publication of JP2004063995A publication Critical patent/JP2004063995A/ja
Publication of JP2004063995A5 publication Critical patent/JP2004063995A5/ja
Pending legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2002223475A 2002-07-31 2002-07-31 半導体装置及び半導体装置の製造方法 Pending JP2004063995A (ja)

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JP2002223475A JP2004063995A (ja) 2002-07-31 2002-07-31 半導体装置及び半導体装置の製造方法

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JP2002223475A JP2004063995A (ja) 2002-07-31 2002-07-31 半導体装置及び半導体装置の製造方法

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JP2004063995A true JP2004063995A (ja) 2004-02-26
JP2004063995A5 JP2004063995A5 (https=) 2005-10-20

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160004179A (ko) 2014-07-02 2016-01-12 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 진보된 상호 접속을 위한 하이브리드 구리 구조를 포함하는 집적 칩 및 금속화층을 형성하는 방법
JP2018207110A (ja) * 2017-06-06 2018-12-27 東京エレクトロン株式会社 二重金属電力レールを有する集積回路の製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160004179A (ko) 2014-07-02 2016-01-12 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 진보된 상호 접속을 위한 하이브리드 구리 구조를 포함하는 집적 칩 및 금속화층을 형성하는 방법
KR101696973B1 (ko) * 2014-07-02 2017-01-16 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 진보된 상호 접속을 위한 하이브리드 구리 구조를 포함하는 집적 칩 및 금속화층을 형성하는 방법
TWI585929B (zh) * 2014-07-02 2017-06-01 台灣積體電路製造股份有限公司 積體電路晶片及後段製程金屬化層之製造方法
US9837354B2 (en) 2014-07-02 2017-12-05 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid copper structure for advance interconnect usage
US10290580B2 (en) 2014-07-02 2019-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid copper structure for advance interconnect usage
US10818597B2 (en) 2014-07-02 2020-10-27 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid copper structure for advance interconnect usage
JP2018207110A (ja) * 2017-06-06 2018-12-27 東京エレクトロン株式会社 二重金属電力レールを有する集積回路の製造方法
JP2023062148A (ja) * 2017-06-06 2023-05-02 東京エレクトロン株式会社 二重金属電力レールを有する集積回路の製造方法
JP7492618B2 (ja) 2017-06-06 2024-05-29 東京エレクトロン株式会社 二重金属電力レールを有する集積回路の製造方法

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