JP2004055590A5

JP2004055590A5 -

Info

Publication number: JP2004055590A5
Application number: JP2002206899A
Authority: JP
Filing date: 2002-07-16
Publication date: 2005-10-20
Anticipated expiration: 2022-07-16

Claims

An SOI substrate having an SOI insulating layer provided on one side of the first silicon substrate;
A second silicon substrate bonded to the SOI insulating layer side of the SOI substrate;
A photoelectric conversion unit provided on either the first silicon substrate or the second silicon substrate;
A charge readout portion provided on the other of the first silicon substrate and the second silicon substrate;
A plug unit formed in a state of penetrating the SOI insulating layer from the first silicon substrate to the second silicon substrate, and transmitting a signal charge generated by the photoelectric conversion unit to the charge reading unit side;
A solid-state imaging device comprising:

The solid-state imaging device according to claim 1, wherein the photoelectric conversion unit and the charge readout unit are stacked perpendicular to the light incident direction of the photoelectric conversion unit.

An insulating film is formed by thermal oxidation of the silicon surface on the inner peripheral portion of the contact hole in which the plug portion is embedded, and a capacitor formed by the insulating film is connected to the signal line between the photoelectric conversion portion and the charge readout portion. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is configured as a part.

The solid-state imaging device according to claim 1, wherein the SOI substrate and the second silicon substrate are bonded by high-temperature bonding of SOI.

The solid-state imaging device according to claim 4, wherein a polysilicon film is used as a wiring material of the charge readout portion.

The solid-state imaging device according to claim 1, wherein a transparent electrode is disposed on a surface of the photoelectric conversion unit.

The solid-state imaging device according to claim 6, wherein a global shutter operation is performed through the transparent electrode.

The solid-state imaging device according to claim 6, wherein surplus charges are discharged through the transparent electrode.

2. The solid-state imaging device according to claim 1, wherein a dark output reduction capacitor is arranged in series between the photoelectric conversion unit and the charge-voltage conversion unit of the charge readout unit.

The photoelectric conversion unit has a pair of photodiodes, the first electrode terminals of each photodiode are connected to each other, the connection point is connected to the charge-voltage conversion unit, and the second electrode terminal of one photodiode is connected The solid-state imaging device according to claim 1, wherein the solid-state imaging device is connected to a reference potential, and the second electrode terminal of the other photodiode is connected to a reset control line.

A first silicon substrate;
An SOI insulating layer formed on one side of the first silicon substrate;
A high concentration impurity layer formed by implanting impurity ions into the first silicon substrate through the SOI insulating layer;
A solid-state imaging device comprising an SOI substrate having

The solid-state imaging device according to claim 11, wherein the SOI insulating layer is formed by thermally oxidizing one surface of the first silicon substrate.

A second silicon substrate bonded to the SOI insulating layer side of the SOI substrate; a photoelectric conversion portion provided on either the first silicon substrate or the second silicon substrate; and the first silicon substrate or the second silicon. A charge readout section provided on either one of the substrates and a signal charge generated by the photoelectric conversion section formed by penetrating the SOI insulating layer from the first silicon substrate to the second silicon substrate; The solid-state imaging device according to claim 11, further comprising: a plug unit that transmits to the reading unit side.

Bonding the second silicon substrate to the SOI insulating layer side of the SOI substrate in which the SOI insulating layer is provided on one surface of the first silicon substrate;
Forming a photoelectric conversion portion on either the first silicon substrate or the second silicon substrate;
Forming a charge readout portion on either the first silicon substrate or the second silicon substrate;
Forming a plug part that transmits the signal charge generated by the photoelectric conversion part to the charge reading part side in a state of penetrating the SOI insulating layer from the first silicon substrate to the second silicon substrate;
A method for manufacturing a solid-state imaging device, comprising:

The method of manufacturing a solid-state imaging device according to claim 14, wherein the photoelectric conversion unit and the charge readout unit are stacked perpendicular to the light incident direction of the photoelectric conversion unit.

An insulating film is formed by thermal oxidation of the silicon surface on the inner peripheral portion of the contact hole in which the plug portion is embedded, and a capacitor formed by the insulating film is connected to the signal line between the photoelectric conversion portion and the charge readout portion. The solid-state imaging device manufacturing method according to claim 14, wherein the solid-state imaging device is configured as a part.

15. The method of manufacturing a solid-state imaging device according to claim 14, wherein the SOI substrate and the second silicon substrate are bonded by high-temperature bonding of SOI.

18. The method of manufacturing a solid-state imaging device according to claim 17, wherein a polysilicon film is used as a wiring material of the charge readout portion.

The method for manufacturing a solid-state imaging device according to claim 14, wherein a transparent electrode is disposed on a surface of the photoelectric conversion unit.

15. The method for manufacturing a solid-state imaging device according to claim 14, wherein a capacitor for reducing dark output is arranged in series between the photoelectric conversion unit and the charge-voltage conversion unit of the charge readout unit.

The photoelectric conversion unit is composed of a pair of photodiodes, the first electrode terminals of each photodiode are connected to each other, the connection point is connected to the charge-voltage conversion unit, and the second electrode terminal of one photodiode is used as a reference. The solid-state imaging device manufacturing method according to claim 14, wherein the solid-state imaging device is connected to a potential, and the second electrode terminal of the other photodiode is connected to a reset control line.

A method for manufacturing a solid-state imaging device including an SOI substrate,
Forming an SOI insulating layer on one side of the first silicon substrate;
Forming the SOI substrate by forming a high concentration impurity layer by implanting impurity ions into the first silicon substrate through the SOI insulating layer;
A method for manufacturing a solid-state imaging device.

23. The method of manufacturing a solid-state imaging device according to claim 22, wherein the SOI insulating layer is formed by thermally oxidizing one surface of the first silicon substrate.

Bonding a second silicon substrate to the SOI insulating layer side of the SOI substrate; forming a photoelectric conversion part on either the first silicon substrate or the second silicon substrate; A step of forming a charge readout section on the other of the two silicon substrates, and a signal charge generated by the photoelectric conversion section in a state of penetrating the SOI insulating layer from the first silicon substrate to the second silicon substrate. 23. The method of manufacturing a solid-state imaging device according to claim 22, further comprising: forming a plug portion that transmits to the charge readout portion side.