JP2004035650A5 - - Google Patents
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- JP2004035650A5 JP2004035650A5 JP2002192279A JP2002192279A JP2004035650A5 JP 2004035650 A5 JP2004035650 A5 JP 2004035650A5 JP 2002192279 A JP2002192279 A JP 2002192279A JP 2002192279 A JP2002192279 A JP 2002192279A JP 2004035650 A5 JP2004035650 A5 JP 2004035650A5
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- Prior art keywords
- aromatic
- residue
- diamine
- general formula
- phenolic
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Description
【請求項1】
下記一般式(I)
【化1】
[式中、Zは芳香族テトラカルボン酸二無水物残基である4価の芳香族基、Y1は下記一般式(II)で表される芳香族ジアミン残基
【化2】
(式中、R1、R2及びR3は、炭素数1〜9のアルキル基、炭素数1〜10のアルコキシ基、COOR(Rは炭素数1〜6のアルキル基を示す)または水素であり、相互に異なっていても同一でもよく;R4、R5、R6、R7は炭素数1〜9のアルキル基または水素であり、相互に異なっていても同一でもよく;Xは−O−、−S−、−SO2−、−C(CH3)2−、−CH2−、−C(CH3)(C2H5)−、または−C(CF3)2−を示し;nは1以上の整数である。)を示す。]で表される繰り返し単位1種以上と、下記一般式(III)
【化3】
(式中、Zは芳香族テトラカルボン酸二無水物残基である4価の芳香族基、Y2はシロキサンジアミン残基または非フェノール性芳香族ジアミン残基を示す。)で表される繰り返し単位1種以上とからなるポリイミド樹脂。
(1)
The following general formula (I)
Embedded image
[In the formula, Z is a tetravalent aromatic group which is an aromatic tetracarboxylic dianhydride residue, and Y 1 is an aromatic diamine residue represented by the following general formula (II).
(Wherein R 1 , R 2 and R 3 are an alkyl group having 1 to 9 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, COOR (R represents an alkyl group having 1 to 6 carbon atoms) or hydrogen. R 4 , R 5 , R 6 , and R 7 are an alkyl group having 1 to 9 carbon atoms or hydrogen, and may be different or the same; X is- O -, - S -, - SO 2 -, - C (CH 3) 2 -, - CH 2 -, - C (CH 3) (C 2 H 5) -, or -C (CF 3) 2 - and N is an integer of 1 or more). And at least one repeating unit represented by the following general formula (III)
Embedded image
(In the formula, Z represents a tetravalent aromatic group which is an aromatic tetracarboxylic dianhydride residue , and Y 2 represents a siloxane diamine residue or a non-phenolic aromatic diamine residue.) A polyimide resin comprising one or more units.
(式中、Zは芳香族テトラカルボン酸二無水物残基である4価の芳香族基、Y2はシロキサンジアミン残基または非フェノール性芳香族ジアミン残基を示す。)で表される繰り返し単位1種以上とからなることを特徴とする。 (In the formula, Z represents a tetravalent aromatic group which is an aromatic tetracarboxylic dianhydride residue , and Y 2 represents a siloxane diamine residue or a non-phenolic aromatic diamine residue.) It is characterized by comprising at least one unit.
上記一般式(III)において、Y2はシロキサンジアミン残基または非フェノール性芳香族ジアミン残基である。Y 2 が非フェノール性芳香族ジアミン残基である場合、この芳香族ジアミンは非フェノール性であれば特に限定されるものではないが、例えば、p−フェニレンジアミン、m−フェニレンジアミン、4,4’−ジフェニレンジアミン、3,3’−ジフェニレンジアミン、3,4’−ジフェニレンジアミン、各種ビス(アミノフェニル)エーテル、各種ビス(アミノフェニルオキシ)ベンゼン、各種2,2−ビス(アミノフェニルオキシフェニル)プロパンを例示できる。Y2がシロキサンジアミン残基である場合、下記一般式(IV)で示されるシロキサンジアミン残基を例示できる。 In the above general formula (III), Y 2 is a siloxane diamine residue or a non-phenolic aromatic diamine residue. When Y 2 is a non-phenolic aromatic diamine residue, the aromatic diamine is not particularly limited as long as it is non-phenolic. For example, p-phenylenediamine, m-phenylenediamine, 4,4 '-Diphenylenediamine, 3,3'-diphenylenediamine, 3,4'-diphenylenediamine, various bis (aminophenyl) ethers, various bis (aminophenyloxy) benzenes, various 2,2-bis (aminophenyl (Oxyphenyl) propane . When Y 2 is a siloxane diamine residue can be exemplified by siloxane diamine residue represented by the following general formula (IV).
本発明のポリイミド樹脂は、ジアミンの一部として、特定のジアミンを用いる以外は、従来公知の方法により製造することができる。この場合、原料のテトラカルボン酸二無水物としては、前記一般式(I)におけるZの説明で例示したテトラカルボン酸二無水物が挙げられる。
原料のフェノール性ヒドロキシル基を有する芳香族ジアミンとしては前記一般式(II)で示した二価の有機基に対応する芳香族ジアミンが挙げられる。
又、原料のシロキサンジアミンまたは非フェノール性芳香族ジアミンとしては、前記一般式(III)のY2で例示したシロキサンジアミン残基または芳香族ジアミン残基にそれぞれ対応するシロキサンジアミンまたは芳香族ジアミンが挙げられる。
The polyimide resin of the present invention can be produced by a conventionally known method except that a specific diamine is used as a part of the diamine. In this case, examples of the tetracarboxylic dianhydride as a raw material include the tetracarboxylic dianhydrides exemplified in the description of Z in the general formula (I).
As the aromatic diamine having a phenolic hydroxyl group as a raw material, an aromatic diamine corresponding to the divalent organic group represented by the general formula (II) may be mentioned.
As the siloxane diamines or non-phenolic aromatic diamine ingredients, the corresponding siloxane diamine or an aromatic diamine to the illustrated siloxane diamine residue or an aromatic diamine residue in Y 2 in the general formula (III) can be mentioned Can be
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002192279A JP4174248B2 (en) | 2002-07-01 | 2002-07-01 | Polyimide resin, resin composition containing the same, coating material for electronic component, and adhesive for electronic component |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002192279A JP4174248B2 (en) | 2002-07-01 | 2002-07-01 | Polyimide resin, resin composition containing the same, coating material for electronic component, and adhesive for electronic component |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004035650A JP2004035650A (en) | 2004-02-05 |
JP2004035650A5 true JP2004035650A5 (en) | 2006-08-31 |
JP4174248B2 JP4174248B2 (en) | 2008-10-29 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002192279A Expired - Lifetime JP4174248B2 (en) | 2002-07-01 | 2002-07-01 | Polyimide resin, resin composition containing the same, coating material for electronic component, and adhesive for electronic component |
Country Status (1)
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JP (1) | JP4174248B2 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4084597B2 (en) * | 2002-05-07 | 2008-04-30 | 群栄化学工業株式会社 | Amino group-containing phenol derivatives |
JP4120780B2 (en) * | 2002-07-19 | 2008-07-16 | 信越化学工業株式会社 | Method for producing polyimide resin having phenolic hydroxyl group |
JP4204435B2 (en) * | 2002-10-10 | 2009-01-07 | 信越化学工業株式会社 | Transparent polyimide silicone resin containing thermosetting groups |
JP4871500B2 (en) * | 2004-11-02 | 2012-02-08 | 株式会社カネカ | Resin modifier for improving fluidity of resin composition |
US8080319B2 (en) | 2005-10-21 | 2011-12-20 | Kippon Kayaku Kabushiki Kaisha | Thermosetting resin composition and use thereof |
JP4737447B2 (en) * | 2007-06-01 | 2011-08-03 | 信越化学工業株式会社 | Polyimide resin having a phenolic hydroxyl group and a polyimide resin composition |
CN102083886A (en) | 2007-09-20 | 2011-06-01 | 日本化药株式会社 | Primer resin for semiconductor device, and semiconductor device |
JP5045924B2 (en) * | 2007-11-19 | 2012-10-10 | 信越化学工業株式会社 | Method for producing polyimide resin having phenolic hydroxyl group |
WO2011021628A1 (en) * | 2009-08-18 | 2011-02-24 | 宇部興産株式会社 | Process for producing polyimide siloxane solution composition, and polyimide siloxane solution composition |
WO2012124780A1 (en) | 2011-03-16 | 2012-09-20 | 東レ株式会社 | Epoxy resin composition, method for producing same, and semiconductor device using same |
JP5707216B2 (en) | 2011-04-26 | 2015-04-22 | 藤森工業株式会社 | Electromagnetic wave shielding material for FPC |
CN102321244B (en) * | 2011-07-22 | 2013-05-01 | 中山大学 | Soluble functional polyimide containing rigid non-planar conjugated structure, and preparation method and application thereof |
JP5726048B2 (en) * | 2011-11-14 | 2015-05-27 | 藤森工業株式会社 | Electromagnetic wave shielding material for FPC |
JP6960404B2 (en) | 2016-07-29 | 2021-11-05 | 株式会社カネカ | Polyimide resin and resin composition |
JP6532518B2 (en) * | 2017-12-08 | 2019-06-19 | 信越化学工業株式会社 | Method of manufacturing high efficiency solar cell |
JP7271461B2 (en) * | 2020-02-19 | 2023-05-11 | 信越化学工業株式会社 | Organic film forming material and pattern forming method |
JP7446887B2 (en) * | 2020-03-30 | 2024-03-11 | リンテック株式会社 | film adhesive |
-
2002
- 2002-07-01 JP JP2002192279A patent/JP4174248B2/en not_active Expired - Lifetime
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