JP2004031794A - Chip type composite part and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a chip type composite part which is small in occupied area and capable of detecting ambient temperatures accurately even if a thermistor itself generates heat through a method wherein the thermistor and a resistor are formed on the surfaces of a chip respectively for the formation of the chip type composite part, and to provide a method of manufacturing the same. <P>SOLUTION: An internal electrode A2 is formed near the one end of the one surface of an alumina base 1 provided with a viahole 5 at its center, a thermistor layer 3 is formed thereon, and an internal electrode B4 is formed as spreading on the thermistor layer 3 and extending over the viahole 5. An internal electrode C6 is formed as spreading over the viahole 5 on the other surface of the alumina base 1 and extending toward the other end of the alumina base 1, a resistor layer 7 is formed so as to cover the internal electrode C6, an internal electrode D8 is formed as spreading over the resistor layer 7 and extending toward the other end of the alumina base 1, the surfaces of the alumina base 1 are covered with protective coats A9 and B10 except their ends, and terminal electrodes A11 and B12 are provided on both ends of the alumina base 1. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a chip-type composite component in which a thermistor and a resistance element are formed on both surfaces of a base made of an insulating material, and a method of manufacturing the same.
[0002]
[Prior art]
In a circuit for applying a constant voltage, for example, when an NTC thermistor is used, when the thermistor is activated, a current of the thermistor flows and a temperature rise inevitably occurs. When the temperature rises, the resistance value of the thermistor decreases due to the characteristics of the thermistor, so that the power consumption increases, and the self-heating of the thermistor itself makes it impossible to accurately detect the ambient temperature.
[0003]
That is, power consumption (W) = {voltage (V)} ² / Resistance value (R), and if the resistance value decreases as the temperature rises, the power applied to the thermistor increases. This causes a vicious cycle in which the temperature rises more and more.
[0004]
Conventionally, in order to suppress an increase in power supplied to the thermistor, a resistance element is connected in series to increase the applied power due to a decrease in the resistance value of the thermistor due to a rise in temperature (increase in the amount of self-ripening of the thermistor) Has been taken by dividing the voltage into resistors connected in series to prevent erroneous temperature detection.
[0005]
[Problems to be solved by the invention]
However, conventionally, a resistance element and a thermistor are individually prepared and mounted on a substrate, for example, to realize a serial connection. For this reason, a mounting space for each of the thermistor and the resistance element is absolutely necessary, and there is a limit to miniaturization.
[0006]
In some cases, a thermistor and a resistor are mounted on a single chip for miniaturization. However, for example, as described in JP-A-2000-124008, a thermistor and a resistor are connected in parallel in a conventional lamination technology. I could only do it. Therefore, realization of a composite chip in which a thermistor and a resistor are connected in series has been awaited.
[0007]
[Means for Solving the Problems]
SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems. By providing a method of manufacturing a composite chip in which a thermistor and a resistor are connected in series by one chip, the self-heating of the thermistor itself can be achieved with a small occupation area. It is an object of the present invention to enable accurate detection of the ambient temperature even if there is any. Then, for example, the following configuration is provided as a means for achieving the object and solving the above-described problem.
[0008]
That is, a chip-type composite component in which a thermistor and a resistance element are formed on both sides of a base made of an insulating material, wherein the thermistor layer formed on one end side of one side of the base; A resistor layer formed on the other end side on the other side of the first substrate, a first electrode formed on one side of the thermistor layer from one end side of the base, and a second electrode formed on the other end side of the base. A second electrode formed on one side of the resistor layer, a third electrode formed on the center of the base from the other side of the thermistor layer, and a center of the base on the other side of the resistor layer; And a via hole formed through the base to connect the third electrode and the fourth electrode to each other. The first electrode includes a thermistor layer, 3rd electrode, via hole, 4th electrode, resistor layer, Characterized in that the electrodes are connected in series.
[0009]
Then, for example, the first electrode is formed on one surface of the base, the thermistor layer is formed on the center of the base from the first electrode, and the third thermistor layer is formed on the base from the thermistor layer. Forming an electrode, forming the fourth electrode on the other surface of the base, forming the resistor layer on the base from the fourth electrode, and forming the other end of the base on the resistor layer; Wherein the second electrode is formed in a portion.
[0010]
Further, for example, the first electrode is formed on one surface of the base, the thermistor layer is formed on the center of the base from the first electrode, and the third thermistor layer is formed on the base from the thermistor layer. Forming an electrode; forming the second electrode on the other surface of the base; forming the resistor layer on the base from the second electrode; and forming the resistor layer on the base from the resistor layer. It is characterized in that a fourth electrode is formed.
[0011]
Further, for example, the third electrode is formed on one surface of the base, the thermistor layer is formed from the third electrode to one end of the base, and one end of the base is formed on the thermistor layer. Forming the first electrode, forming the fourth electrode on the other surface of the base, forming the resistor layer on the base from the fourth electrode, and forming the resistor layer on the base from the resistor layer. The second electrode is formed on the other end of the base.
[0012]
Further, for example, the first electrode and the third electrode are formed at a predetermined interval on one surface of the base, and the thermistor layer is formed on one surface of the base across the first electrode and the third electrode. Forming the second electrode and the fourth electrode at a predetermined interval on the other surface of the substrate, and forming the resistor layer on one surface of the substrate across the second electrode and the fourth electrode. Is formed.
[0013]
Further, for example, after that, a protective layer is formed by forming a coating layer on both surfaces of the substrate except for the end portions, and external connection electrodes connected to the first electrode and the second electrode are formed. Features.
[0014]
Further, for example, a display material is added to the protective coat on one surface of the substrate surface so that the surface on which the thermistor layer or the resistor layer is formed can be identified.
[0015]
Alternatively, a method of manufacturing a chip-type composite component formed by forming a thermistor and a resistance element on both surfaces of a base made of an insulating material, wherein a via-hole forming step of forming a via-hole penetrating a central portion of the base, A first electrode forming step of forming a first electrode extending to the center from one end on one surface of the base, and a thermistor layer forming the thermistor layer on the center of the base from above the first electrode A forming step, a third electrode forming step of forming a third electrode from the thermistor layer on the base to the via hole, and a direction from the via hole at the center on the other surface of the base to the other end. A fourth electrode forming step of forming the fourth electrode, a resistor layer forming step of forming a resistor layer on the base from the fourth electrode, and the other end of the base from the resistor layer Part Characterized by a method for manufacturing a chip-type composite part having a second electrode forming step of forming a serial second electrode.
[0016]
Furthermore, a method of manufacturing a chip-type composite component in which a thermistor and a resistance element are formed on both surfaces of a base made of an insulating material, wherein a via-hole forming step of forming a via-hole penetrating a central portion of the base, A first electrode forming step of forming a first electrode extending to the center from one end on one surface of the base; and a thermistor forming the thermistor layer on the center of the base from the first electrode A layer forming step, a third electrode forming step of forming a third electrode from the thermistor layer on the base to the via hole, and extending to the center from the other end on the other surface of the base. A second electrode forming step of forming a second electrode, a resistor layer forming step of forming a resistor layer on the base central portion from the second electrode, and forming a resistor layer on the base from the upper surface of the resistor layer. Formed and before Characterized by a method for manufacturing a chip-type composite part having a fourth electrode formation step of forming a fourth electrode leading to the via hole.
[0017]
Furthermore, a method of manufacturing a chip-type composite component in which a thermistor and a resistance element are formed on both surfaces of a base made of an insulating material, wherein a via-hole forming step of forming a via-hole penetrating a central portion of the base, Forming a third electrode in the direction of one end from the via hole on one surface of the substrate, and forming a thermistor layer on the third electrode and in the vicinity of one end of the substrate. A thermistor layer forming step, a first electrode forming step of forming a first electrode on the one end face of the base from above the thermistor layer, and a fourth electrode extending from the via hole on the other face of the base to the other end. A fourth electrode forming step of forming an electrode, a resistor layer forming step of forming a resistor layer from above the fourth electrode and near the other end of the base, and a second end of the base from above the resistor layer Second on part Characterized by a method for manufacturing a chip-type composite part having a second electrode forming step of forming an electrode.
[0018]
Alternatively, a method of manufacturing a chip-type composite component formed by forming a thermistor and a resistance element on both surfaces of a base made of an insulating material, wherein a via-hole forming step of forming a via-hole penetrating a central portion of the base, A first electrode forming step of forming a first electrode from one end surface to a central portion on one surface of the base; and a third electrode reaching the via hole with a predetermined interval from the central portion of the first electrode. A third electrode forming step of forming the thermistor layer, a thermistor layer forming step of forming a thermistor layer across the first electrode and the third electrode, and a center portion from the other end surface on the other surface of the base. A second electrode forming step of forming a second electrode, a third electrode forming step of forming a fourth electrode having a predetermined distance from the center of the second electrode and reaching the via hole, And the fourth electrode In characterized by a method for manufacturing a chip-type composite part having a resistive layer forming a resistive layer.
[0019]
Then, for example, after that, a protective coat forming step of forming a coat layer on both surfaces of the base except for the ends to form a protective coat, and an external connection electrode connected to the first electrode and the second electrode, respectively. Forming a chip-type composite component having an external electrode forming step.
[0020]
Further, for example, a method of manufacturing a chip-type composite component including a display material adding step of adding a display material to the protective coat on one surface of the substrate surface is provided.
[0021]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.
[First Embodiment]
FIG. 1 is a cross-sectional view for explaining a configuration of a composite chip according to an embodiment of the present invention, and FIG. 2 is a diagram for explaining a structure on one surface of a composite chip substrate of the embodiment. FIG. 3 is a view for explaining the structure of the other surface of the composite chip substrate according to the present embodiment, where AA in FIG. 1 is one surface of the substrate and BB is the other surface of the substrate. FIG. 1 shows a cross section taken along the plane CC of FIG.
[0022]
In the present embodiment, a case where a thermistor and a resistor are connected to both surfaces of an alumina substrate and an intermediate portion is connected by a via hole will be described as an example of a composite chip.
[0023]
In the figure, reference numeral 1 denotes an alumina substrate having electrical insulation, and the alumina substrate 1 is formed of an alumina sintered body. In this embodiment, the mounting area is approximately 1.28 mm when the composite chip is completed. ² (Composite chip having a size of 1.6 mm × 0.8 mm × 0.8 mm).
[0024]
Reference numeral 2 denotes an internal electrode A formed from one end of one surface of the alumina substrate 1 (the surface AA in FIG. 1) to the center, and 3 covers the entire surface except the end of the internal electrode A2. It is a thermistor layer formed over the center. The thermistor layer 3 of the present embodiment is formed in a substantially square shape.
[0025]
Reference numeral 4 denotes an internal electrode formed from the upper surface of the thermistor layer 3 to a via hole 5 provided in the center of the alumina substrate 1. Reference numerals 5 and 5 denote via holes provided through substantially the center of the alumina substrate 1. The conductive paste is filled in the holes, and electrically connects the internal electrodes B4 and C6.
The filling of the via hole 5 with the conductive material may be performed simultaneously with the formation of the internal electrode B4 or the internal electrode C6, or may be a through hole shape in which the conductive material is formed only on the inner periphery of the hole. In this embodiment, for example, the via hole 5 can be formed to have a hole diameter of about 10 μm to 200 μm.
[0026]
Reference numeral 6 denotes an internal electrode C extending from the central via hole on the other surface (the surface BB in FIG. 1) of the alumina substrate 1 to the other end, and 7 covers the entire surface except the central portion of the internal electrode C6, and The resistor layer is formed over the end portion. In the present embodiment, the resistor layer 7 is formed in a substantially square shape.
[0027]
Reference numeral 8 denotes an internal electrode D formed from the upper surface of the resistor layer 7 to the other end of the alumina substrate 1. Reference numeral 9 denotes a protective coat for coating the entire surface of the alumina substrate 1 except for both end portions (terminal electrode forming portions), and reference numeral 10 denotes a protective coating for the other surface of the alumina substrate 1 except for both end portions (terminal electrode forming portions). It is a protective coat B. After the thermistor layer 3 and the resistor layer 7 are connected in series on the alumina substrate 1 by the internal electrodes and the via holes 5 in this manner, the surfaces are coated with the protective coats A9 and B10 except for both ends of the alumina substrate 1. Can prevent from secular change.
[0028]
Finally, terminal electrodes A11 and B12 are formed on both ends of the alumina substrate 1. The terminal electrode A11 is connected to the internal electrode A2, and the terminal electrode B12 is connected to the internal electrode D8. As a result, the connection state shown in FIG. 3 is obtained, and a one-chip composite component in which the thermistor and the resistor are connected in series is realized.
[0029]
The alumina substrate 1 used in the present embodiment is, for example, 96% Al ₂ O ₃ It is desirable to select an alumina substrate having an appropriate thickness according to the chip size.
[0030]
The internal electrodes A2, B4, C6, and D8 can be formed by sputtering, screen printing, or the like of any noble metal such as Ag, Ag / Pd, Pt, and Au. For example, a metal glaze of Ag-Pd-glass can be formed by screen printing or the like. Note that the internal electrodes may be formed of Au or Ag.
[0031]
Similarly, the thermistor layer 3 is formed by screen printing or the like with a thermistor paste having arbitrary characteristics. As the thermistor paste used in the present embodiment, three to four types of composite oxides selected from Mn, Ni, Co, Fe, Al, and Cu according to characteristics are used. The firing temperature of the thermistor layer 3 can be set to 850 ° C. to 1300 ° C., but is preferably set to 1000 ° C. or less.
[0032]
When the firing temperature is set low, for example, when the temperature is 1000 ° C. or lower, the thermistor is used to improve the sinterability at a low temperature and increase the adhesion to the internal electrode A2 and the alumina substrate 1. Add the glass material into the paste.
[0033]
Specifically, for example, it is manufactured by the following method.
[0034]
(1) Oxides of various metals having a thermistor component ratio of Mn: 30 to 60 mol%, Ni: 10 to 30 mol%, Co: 10 to 30 mol%, and Fe: 10 to 30 mol% are used as raw materials. A slurry is produced by mixing with water or alcohol by a wet ball mill. As a metal oxide used as a starting material, Mn ₃ O ₄ , NiO, Co ₃ 0 ₄ , Fe ₂ 0 ₃ It is desirable to set it as such.
[0035]
{Circle over (2)} The mixed slurry is dried in a drying step to remove water or alcohol, and then pre-baked at 800 ° C. to 1000 ° C. to produce a raw material powder.
[0036]
{Circle around (3)} The powder that has been preliminarily calcined is ground by a wet ball mill. At this time, water or alcohol is used as the solvent.
[0037]
{Circle around (4)} The obtained slurry is dried in a drying step to remove water or alcohol components, and then ethyl cellulose and α-terpineol are added, and a thermistor paste is prepared using a three-roll mill.
[0038]
{Circle around (5)} When glass is added to the thermistor paste, borosilicate glass powder is added to the thermistor paste and made into a paste by a three-roll mill.
[0039]
By manufacturing the thermistor paste as described above and forming the thermistor paste on the alumina substrate 1 by screen printing, a small-sized, high-performance thermistor can be manufactured.
[0040]
Further, the resistor layer 7 of the present embodiment may be formed by screen printing a resistor paste having arbitrary characteristics, or by forming a resistor material by sputtering or the like. The resistor material used here is RuO ₂ , SnO ₂ Or the like can be used, and an arbitrary one can be selected according to the resistance value.
[0041]
When the resistor layer 7 is formed by screen printing, the resistor powder is used as a paste. In this case, the firing temperature of the resistor layer 7 is desirably set to 600 ° C. to 1000 ° C. When the firing temperature is the same as that of the thermistor layer 3, the thermistor layer 3 and the resistor layer 7 (including the internal electrodes B4 and C6) may be formed by simultaneous firing.
[0042]
The terminal electrodes A11 and B12 are formed by forming any conductive material such as Ag, Ag / Pd, Ni / Cr, and Cu by dipping or sputtering, and forming nickel, solder, or Sn thereon by electroplating or the like. To secure attachment.
[0043]
The protective coat A9 and the protective coat B10 are arbitrarily selected from glass or a heat-resistant resin and are formed by screen printing or the like. For example, a paste using borosilicate glass, or an epoxy or polyimide resin can be used.
[0044]
The thermistor characteristics and the resistance value characteristics of the resistance element of the composite chip manufactured as described above can be adjusted by laser trimming of the thermistor layer, the resistance layer or the internal electrode, or the internal electrode / structure (electric distance).
[0045]
Next, a method of manufacturing the composite chip having the above-described configuration will be described with reference to FIGS. 4 to 14 are views for explaining a method of manufacturing the composite chip according to the present embodiment, and schematically show each manufacturing process.
[0046]
4 shows a step of forming an internal electrode A on an alumina substrate as an insulating substrate, FIG. 5 shows a step of forming a thermistor layer thereon, and FIG. 6 shows a step of forming an internal electrode B. 7 shows a step of forming an internal electrode C on a substrate, FIG. 8 shows a step of forming a resistor layer thereon, and FIG. 9 shows a step of forming an internal electrode D thereon. 10 shows a step of forming a protective coat on one side of the alumina base, FIG. 11 shows a step of forming a protective coat on the other side of the alumina base, and FIG. 12 shows a step of cutting into a strip-shaped aggregated part shape. FIG. 13 shows a step of further forming a terminal electrode, and FIG. 14 shows a step of cutting the strip-shaped collective component into individual composite chip components.
[0047]
First, as shown in FIG. 4, an insulating substrate 101 of alumina sintered body having a predetermined size in which a via hole 105 is provided (the following description describes an example of manufacturing 12 composite chips). The internal electrode A102 is printed on one surface by, for example, Ag-Pd-glass metal glaze.
[0048]
Subsequently, as shown in FIG. 5, a thermistor paste (for example, a composite metal oxide having a thermistor characteristic and having a particle size of about several μm and having a thermistor characteristic) is applied to the upper surface of the extension except for the end for each internal electrode A102. (CO ₂ O ₃ + NiO + Mn ₂ O ₃ ) And paint with glass frit and organic vehicle).
[0049]
Next, as shown in FIG. 6, for each thermistor layer 103, the internal electrode B104 is printed by, for example, Ag-Pd-glass metal glaze so as to completely cover the via hole position of the alumina substrate 101 from the upper surface of the thermistor layer 103. Then, each thermistor layer 103 is formed on one surface by firing at, for example, about 850 ° C.
[0050]
Here, since the formation on one side of the alumina base 101 is completed, the alumina base 101 is turned over, and thereafter, the processing on the other side of the alumina base 101 is performed. First, as shown in FIG. 7, the internal electrode C106 is printed on the other surface of the alumina substrate 102 by, for example, Ag-Pd-glass metal glaze so as to completely cover the via hole position of the alumina substrate 101. At the same time, the via holes are filled with an electrode glaze.
[0051]
Subsequently, as shown in FIG. 8, a resistor paste is printed from above each internal electrode C106 to above the alumina substrate 101 to form each resistor layer 107. Next, as shown in FIG. 9, for each resistor layer 107, an internal electrode D108 is printed on the alumina substrate 101 from the upper surface of the resistor layer 107 by, for example, Ag-Pd-glass metal glaze.
[0052]
Thereafter, as shown in FIG. 10, the internal electrode C106 is printed over the alumina substrate 101 excluding the end of the internal electrode D108 by, for example, Ag-Pd-glass metal glaze. Then, each resistor layer 105 is formed on the other surface by firing at, for example, about 850 ° C.
[0053]
In the case where the thermistor layer 103 and the resistor layer 107 are fired at the same temperature, firing may be performed at once instead of firing after forming the thermistor layer 103 on one surface.
[0054]
Here, when it is necessary to adjust the resistance value or the thermistor characteristic, the internal electrode D108 is cut on the resistor layer 105 by a laser beam, and the resistance value is adjusted according to the position of the kerf. The cutting method may be adjusted by a sand blast method in addition to the laser beam, or the internal electrode D108 may be formed in a comb shape in advance, and the comb-shaped continuous portion may be cut at an appropriate position.
[0055]
Next, as shown in FIG. 10, the portion between both ends of each of the internal electrodes A102 and each of the internal electrodes D108 on the other surface of the alumina substrate 101 (excluding the internal electrodes C106, the ends of the resistor layer 107 and the internal electrodes D108) For example, a heat-resistant epoxy resin is formed by printing so as to cover the portion, and the resin is cured at, for example, about 130 ° C. to form the protective coat B110.
[0056]
The next alumina substrate 101 is turned upside down so as to cover the portion between both ends of each internal electrode A102 and each internal electrode D108 on one surface (the portion excluding the end of the internal electrode A10, the thermistor layer 103 and the internal electrode D104). For example, a heat-resistant epoxy resin is formed by printing, and the resin is cured at, for example, about 130 ° C. to form a protective coat A109.
[0057]
The protective coats A109 and B110 may be formed by printing a heat-resistant epoxy resin on both surfaces without separate firing, and the protective coats may be formed on both surfaces by one firing. This can reduce the number of steps.
[0058]
Then, as shown in FIG. 12, the insulating substrate 101 is divided from a portion indicated by a broken line (a division groove may be formed in advance) with the length direction of each composite chip piece as the width direction, and the strip-like divided body 120 is formed. Get.
[0059]
Next, as shown in FIG. 13, continuous terminal electrodes 111 and 112 are formed on both sides in the width direction of the strip-like divided body 120, and one terminal electrode is used as the internal electrode A102, and the other terminal electrode is used as the internal electrode D108. And are connected respectively. The terminal electrodes 111 and 1112 are formed by a method of vacuum deposition of Ni-Cr, a method of applying and firing Ag-Pd-glass metal glaze, and a method of dispersing Ag and applying and curing an epoxy resin paint. You.
[0060]
Finally, as shown in FIG. 14, the strip-like divided body 120 is cut for each composite chip, for example, at the broken line position in FIG. 14 (division grooves may be formed in advance) to complete individual composite chips. .
[0061]
As described above, according to the present embodiment, the internal electrode A2 is formed near one end of one surface of the alumina substrate 1, the thermistor layer 3 is formed thereon, and the alumina substrate 1 is formed from above the thermistor layer 3. 1, an internal electrode B4 is formed over the central via hole, an internal electrode C6 is formed from the via hole position on the other surface of the alumina substrate 1 toward the other end, and a resistor layer 7 is formed so as to cover the internal electrode C6. Then, an internal electrode D8 is formed from the resistor layer 7 to the other end of the alumina substrate 1, and the internal electrode A2, the thermistor layer 3, the internal electrode B4, the via hole 5, the internal electrode C6, the resistor layer 7, and the internal electrode D8 Are connected in series, the surfaces of both surfaces are covered with protective coats A9 and B10, and terminal electrodes A11 and B12 are formed at both ends, so that the thermistor element and the resistance element can be made the same small size. -Up to be formed in series, even if a decrease in resistance due to heat generation of the thermistor element, it is possible to minimize their impact.
[0062]
Furthermore, since the resistor layer is formed on the surface opposite to the thermistor layer, the thermistor layer can be less affected by the self-heating of the resistor. By mounting the resistor layer on the substrate side when mounting on the substrate, the heat generated from the resistor is easily diffused to the mounting substrate, and the influence of the heat on the thermistor can be further reduced.
[0063]
[Second Embodiment]
In the above description, the thermistor layer 3 is formed on the internal electrode A2 on one surface of the alumina substrate 1, and the internal electrode B4 is formed thereon, and the internal electrode C6 is formed on the other surface of the alumina substrate 1 on the other surface. An example has been described in which the body layer 7 and the internal electrode D8 are successively superposed thereon to form the respective layers. However, the present invention is not limited to the above example. For example, the resistor layer may be formed on the other surface of the alumina substrate 1 in the same process as on one surface. A second embodiment of the present invention thus formed will be described below with reference to FIGS.
[0064]
FIG. 15 is a cross-sectional view for explaining the configuration of the composite chip of the second embodiment according to the present invention, and FIG. 16 is a diagram for explaining the structure of the other surface of the composite chip base of this embodiment. The same reference numerals are given to the same components as those in the first embodiment, and the detailed description will be omitted. In FIG. 15, AA is one surface of the substrate, and BB is the other surface of the substrate. In the second embodiment, one surface (A-A surface) of the alumina substrate 1 is the same as the configuration shown in FIG. 2 of the first embodiment described above. The description is omitted, and only the other surface (BB surface) will be described. FIG. 15 shows a cross section taken along the line CC of FIG.
[0065]
Also in the second embodiment, for example, the thermistor layer 3 shown in FIG. 2 is formed on one surface of the alumina substrate 1 in the same manner as in the first embodiment. When the formation of the internal electrode C4 on one surface is completed, the alumina substrate 1 is turned over and the internal electrode D208 is first printed on the other surface by, for example, Ag-Pd-glass metal glaze.
[0066]
Subsequently, a resistor paste is printed so as to cover the upper surface of the extension except for the end of each internal electrode D208, thereby forming a resistor layer 207. Next, the internal electrode B204 is printed so as to cover the via hole 5 on the other surface of the alumina substrate 1 from at least the central upper surface of the resistor layer 207. At the same time, the via holes are filled with an electrode glaze.
[0067]
Then, each resistor layer 105 is formed on the other surface by firing at, for example, about 850 ° C. In the case where the thermistor layer 103 and the resistor layer 107 are fired at the same temperature, firing may be performed at once instead of firing after forming the thermistor layer 103 on one surface.
[0068]
Then, the entire surface excluding both ends (terminal electrode forming portions) of one surface of the alumina substrate 1 is coated with the protective coat A209, and the entire surface excluding both ends (terminal electrode forming portions) of the other surface of the alumina substrate 1 is protected. Coated with B210 to prevent aging.
[0069]
Finally, terminal electrodes A211 and B212 are formed at both ends of the alumina base 1. The terminal electrode A211 is connected to the internal electrode A2, and the terminal electrode B212 is connected to the internal electrode D208. As a result, the connection state shown in FIG. 16 is obtained, and a one-chip composite component in which the thermistor and the resistor are connected in series is realized.
[0070]
As described above, according to the second embodiment, a composite chip can be provided in the same steps as in the first embodiment.
[0071]
[Third Embodiment]
In the second embodiment described above, first, the internal electrode A2 and the internal electrode D208 are printed on the alumina substrate 1, and the thermistor layer 3 and the resistor layer 207 are formed thereon, and the internal electrodes are formed thereon. The example of forming B4 and C206 has been described. However, the present invention is not limited to the above example. For example, the internal electrodes B and C may be formed first. First, a third embodiment of the present invention in which the internal electrodes B and C are formed will be described below with reference to FIGS.
FIG. 17 is a cross-sectional view for explaining the configuration of the composite chip of the third embodiment according to the present invention, and FIG. 18 is the structure of one surface (A-A surface) of the composite chip base of this embodiment. This is a diagram for explaining the same. The same reference numerals are given to the same components as those in the first embodiment described above, and the detailed description is omitted. In the third embodiment, the other surface (B-B surface) of the alumina substrate 1 is the same as the configuration shown in FIG. 3 of the first embodiment described above. The description will be omitted, and only one side will be described. FIG. 17 shows a cross section taken along the plane CC of FIG.
In the third embodiment, first, a substantially square internal electrode B304 is formed by printing or the like from the center via hole portion to one end of the alumina base. At the same time, the via holes are filled with an electrode glaze.
[0072]
Subsequently, a thermistor paste is printed so as to cover at least one end of the internal electrode B304 except for the central portion, and the upper area is substantially the same as that of the first embodiment, thereby forming a thermistor layer 303.
[0073]
Next, an internal electrode A302 is formed from the upper portion of the thermistor layer 303 to one end of the alumina substrate 1. Then, for example, by firing at about 850 ° C., the formation of the thermistor layer on one side is completed.
[0074]
When the thermistor layer 303 and the resistor layer 7 are fired at the same temperature, the formation of the resistor layer and the like on the other surface is not completed after the formation of the thermistor layer 303 and the like on one surface. After that, firing may be performed at once.
[0075]
Then, the entire surface excluding both ends (terminal electrode forming portions) of one surface of the alumina substrate 1 is coated with the protective coat A309, and the entire surface excluding both ends (terminal electrode forming portions) of the other surface of the alumina substrate 1 is protected. Coated with B310 to prevent aging.
[0076]
Finally, terminal electrodes A311 and B312 are formed on both ends of the alumina substrate 1. Terminal electrode A311 is connected to internal electrode A302, and terminal electrode B312 is connected to internal electrode D8. As a result, the connection state shown in FIG. 17 is obtained, and a one-chip composite component in which the thermistor and the resistor are connected in series is realized.
[0077]
As described above, according to the third embodiment, a composite chip can be provided in the same steps as in the first embodiment.
[0078]
[Fourth Embodiment]
In each of the embodiments described above, the example in which the electrodes are formed on the upper surfaces of the thermistor layer and the resistor layer has been described. However, the present invention is not limited to the above example. For example, the internal electrodes A, B, C, and D may be formed first. First, a fourth embodiment of the present invention in which all the internal electrodes are formed will be described below with reference to FIGS.
[0079]
FIG. 19 is a cross-sectional view for explaining the configuration of the composite chip of the fourth embodiment according to the present invention, and FIG. 20 is for explaining the structure on one surface of the composite chip base of the fourth embodiment. FIGS. 21A and 21B are diagrams for explaining the structure of the other surface of the composite chip substrate according to the fourth embodiment, wherein AA in FIG. 19 is one surface of the substrate, and BB is the other surface of the substrate. It is the direction. FIG. 19 shows a cross section taken along plane CC of FIG.
[0080]
In the fourth embodiment, first, the internal electrodes A402 and B404 are arranged at predetermined intervals in a row from one end to the center of one surface of the alumina substrate 1 and to the portion including the center via hole as shown in FIG. Is formed by printing or the like. At the same time, the via holes are filled with an electrode glaze.
[0081]
Subsequently, a thermistor paste is printed over the internal electrode A402 and the internal electrode B404 so that the upper area is substantially the same as that of the first embodiment, and the thermistor layer 403 is formed by firing at, for example, about 850 ° C. .
[0082]
Next, the alumina substrate 1 is turned upside down, and a process of forming a resistor layer and the like on the other surface is performed. First, the internal electrodes C406 and D408 are formed by printing or the like at predetermined intervals in a row from the other end of the other surface of the alumina substrate 1 to the center and the portion including the center via hole as shown in FIG. At the same time, the via holes are filled with an electrode glaze.
[0083]
Next, a resistor paste is printed over the internal electrode C 406 and the internal electrode D 408 so as to have substantially the same upper area as that of the first embodiment, and baked at, for example, about 850 ° C.
[0084]
When the thermistor layer 403 and the resistor layer 408 are fired at the same temperature, the thermistor paste and the resistor paste may be printed continuously or simultaneously, and then fired collectively.
[0085]
Then, the entire surface excluding both ends (terminal electrode forming portions) of one surface of the alumina substrate 1 is coated with the protective coat A409, and the entire surface excluding both ends (terminal electrode forming portions) of the other surface of the alumina substrate 1 is protected. Coat with B410 to prevent aging.
[0086]
Finally, terminal electrodes A 411 and B 412 are formed on both ends of the alumina substrate 1. The terminal electrode A411 is connected to the internal electrode A402, and the terminal electrode B412 is connected to the internal electrode D408. As a result, the connection state shown in FIG. 19 is obtained, and a one-chip composite component in which the thermistor and the resistor are connected in series is realized.
[0087]
As described above, according to the fourth embodiment, a composite chip can be provided in the same steps as in the first embodiment. In addition, since the internal electrodes are formed in a row, two internal electrodes can be formed in one step, and the number of manufacturing steps can be reduced. Further, the thermistor layer 403 and the resistor layer 407 formed on the internal electrode are also easy to form because the thickness of the internal electrode is not so large. Can provide chips.
[0088]
[Fifth Embodiment]
In the composite chip component of each embodiment described above, since the resistor layer is formed on the surface opposite to the thermistor layer, the thermistor layer can be less affected by the self-heating of the resistor. However, in addition to this, by securely mounting the resistor layer on the board side when mounting on the board, the heat generated from the resistor is easily diffused to the mounting board, further reducing the effect of heat on the thermistor it can. For this reason, if it is possible to easily identify on which side the thermistor layer or the resistor layer is formed, it is easy to confirm when mounting on a substrate.
[0089]
A fourth embodiment according to the present invention in which the formation surface of the thermistor layer (the formation surface of the resistor layer) can be easily identified will be described below with reference to FIGS. FIG. 22 is a schematic diagram for explaining a display material mounting step in the fifth embodiment according to the present invention, and FIG. 23 is a schematic view showing a composite chip of the fifth embodiment.
[0090]
In the fifth embodiment, for example, in the case of a composite chip having the configuration described in the first embodiment, after forming the double-sided protective coat shown in FIG. 11, for example, as shown in FIG. The display material 15 is added to one surface forming the layer. This makes it possible to easily identify which surface is the thermistor forming surface and which surface is the resistor forming surface.
[0091]
The display material 15 may be applied with a paint that is easily distinguishable from the protective coat, or may be displayed with a stamp using ink that is easily distinguishable from the protective coat. Any material or any method may be used so long as it can be identified. Alternatively, a part of the protective coat may be cut off to distinguish it from others.
[0092]
As a result, the external appearance of the composite chip is as shown in FIG. 23, and by adding the display material 15, the front and back of the composite chip can be easily identified.
[0093]
In the second to fourth embodiments as well, after the same protective coat is formed on both surfaces, for example, the display material 15 is formed on the protective coat (protective coat A) of the thermistor layer forming surface. May be added.
[0094]
In each of the above embodiments, since the resistor layer is formed on the surface on the opposite side of the thermistor layer, not only can the thermistor layer be less affected by the self-heating of the resistor, but also when mounted on a substrate. If the resistor layer is mounted on the substrate side, the heat generated from the resistor is easily diffused into the mounting substrate, and the influence of the heat on the thermistor can be further reduced.
[0095]
For this reason, the mounting direction of the chip when mounting the composite chip can be easily identified, it can be definitely positioned at the wiring pattern position of the mounting board, and the mounting result can be easily confirmed. Furthermore, by mounting the display material 15 on the substrate with the side to which the display material 15 is added facing upward (with the display material 15 facing the front side), it is possible to easily confirm a mounting state in which the influence of heat on the thermistor can be easily reduced. .
[0096]
【The invention's effect】
As described above, according to the present invention, it is possible to form a thermistor element and a resistor element in series on both surfaces of one chip, and to obtain a high-precision thermistor characteristic with a small occupied area and little change in characteristics due to heat generation or the like. And a composite chip component having the same. Further, by mounting the resistor layer on the substrate side, the heat generated from the resistor is easily diffused to the mounting substrate, and the influence of the heat on the thermistor can be further reduced.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view illustrating a configuration of a composite chip according to an embodiment of the present invention.
FIG. 2 is a diagram for explaining a structure on one surface of a composite chip substrate according to the present embodiment.
FIG. 3 is a diagram for explaining the structure of the other surface of the composite chip substrate of the present embodiment.
FIG. 4 is a diagram for explaining a method of manufacturing the composite chip according to the embodiment.
FIG. 5 is a diagram for explaining a method of manufacturing the composite chip according to the embodiment.
FIG. 6 is a diagram for explaining a method of manufacturing the composite chip according to the embodiment.
FIG. 7 is a diagram for explaining a method of manufacturing the composite chip according to the embodiment.
FIG. 8 is a diagram illustrating a method for manufacturing a composite chip according to the present embodiment.
FIG. 9 is a diagram illustrating a method for manufacturing a composite chip according to the present embodiment.
FIG. 10 is a diagram for explaining the method of manufacturing the composite chip according to the embodiment.
FIG. 11 is a diagram illustrating a method for manufacturing a composite chip according to the present embodiment.
FIG. 12 is a diagram illustrating a method for manufacturing a composite chip according to the present embodiment.
FIG. 13 is a diagram illustrating a method for manufacturing the composite chip according to the present embodiment.
FIG. 14 is a diagram illustrating a method for manufacturing a composite chip according to the present embodiment.
FIG. 15 is a cross-sectional view illustrating a configuration of a composite chip according to a second embodiment of the present invention.
FIG. 16 is a diagram for explaining the structure of the other surface of the composite chip substrate according to the second embodiment.
FIG. 17 is a cross-sectional view illustrating a configuration of a composite chip according to a third embodiment of the present invention.
FIG. 18 is a diagram for explaining a structure on one surface of a composite chip substrate according to a third embodiment.
FIG. 19 is a cross-sectional view illustrating a configuration of a composite chip according to a fourth embodiment of the present invention.
FIG. 20 is a view for explaining a structure on one surface of a composite chip substrate according to a fourth embodiment.
FIG. 21 is a diagram for explaining the structure of the other surface of the composite chip substrate according to the fourth embodiment.
FIG. 22 is a schematic diagram for explaining a display material mounting step in a fifth embodiment according to the present invention.
FIG. 23 is a schematic view showing a composite chip according to a fifth embodiment.
[Explanation of symbols]
1,101 Alumina substrate
2, 102, 302, 402 Internal electrode A
3, 103, 303, 403 Thermistor layer
4, 104, 304, 404 Internal electrode B
5, 105 Via hole
6, 106, 206, 306, 406 Internal electrode C
7, 107, 207, 307, 407 Resistor layer
8, 108, 208, 308, 408 Internal electrode D
9, 109, 209, 309, 409 Protective coat A
10, 110, 210, 310, 410 Protective coat B
11, 111, 211, 311, 411 Terminal electrode A
12, 112, 212, 312, 412 Terminal electrode B
15 Display materials

Claims (13)

A chip-type composite component in which a thermistor and a resistance element are formed on both surfaces of a base made of an insulating material,
A thermistor layer formed on one end side on one surface of the base,
A resistor layer formed on the other end side of the other surface of the base,
A first electrode formed on one surface of the thermistor layer from one end surface of the base;
A second electrode formed on one surface of the resistor layer from the other end surface of the base;
A third electrode formed at the center of the base from the other surface of the thermistor layer;
A fourth electrode formed at the center of the base from the other surface of the resistor layer;
A via hole formed through the base to connect the third electrode and the fourth electrode to each other;
A chip-type composite component, wherein a thermistor layer, a third electrode, a via hole, a fourth electrode, a resistor layer, and a second electrode are connected in series from the first electrode. The first electrode is formed on one surface of the base, the thermistor layer is formed on the center of the base from the first electrode, and the third electrode is formed on the base from the thermistor layer. And
The fourth electrode is formed on the other surface of the base, the resistor layer is formed on the base from above the fourth electrode, and the second electrode is formed on the other end of the base from above the resistor layer. 2. The chip-type composite component according to claim 1, wherein said electrode is formed. The first electrode is formed on one surface of the base, the thermistor layer is formed on the center of the base from the first electrode, and the third electrode is formed on the base from the thermistor layer. And
The second electrode is formed on the other surface of the base, the resistor layer is formed on the base from the second electrode, and the fourth electrode is formed on the base from the resistor layer. 2. The chip-type composite component according to claim 1, wherein the component is formed. The third electrode is formed on one surface of the base, the thermistor layer is formed on one end of the base from above the third electrode, and the thermistor layer is formed on one end of the base from above the thermistor layer. Forming a first electrode,
The fourth electrode is formed on the other surface of the base, the resistor layer is formed on the base from above the fourth electrode, and the second electrode is formed on the other end of the base from above the resistor layer. 2. The chip-type composite component according to claim 1, wherein said electrode is formed. Forming the first electrode and the third electrode at a predetermined interval on one surface of the base; forming the thermistor layer on the one surface of the base across the first electrode and the third electrode;
The second electrode and the fourth electrode are formed at a predetermined interval on the other surface of the base, and the resistor layer is formed on one surface of the base across the second electrode and the fourth electrode. The chip-type composite component according to claim 1, wherein Thereafter, a coat layer is formed on both surfaces of the base except for the end portions to form a protective coat, and external connection electrodes respectively connected to the first electrode and the second electrode are formed. The chip-type composite component according to claim 1. 7. The display device according to claim 1, wherein a display material is added to the protective coat on one surface of the substrate surface so that the surface on which the thermistor layer or the resistor layer is formed can be identified. 8. Chip-type composite parts. A method of manufacturing a chip-type composite component formed by forming a thermistor and a resistance element on both surfaces of a base made of an insulating material,
A via hole forming step of forming a via hole penetrating a central portion of the base,
A first electrode forming step of forming a first electrode extending to the center from one end on one surface of the base;
A thermistor layer forming step of forming the thermistor layer on the central part of the base from the first electrode;
A third electrode forming step of forming a third electrode from the thermistor layer to the via hole formed on the base;
A fourth electrode forming step of forming the fourth electrode in a direction toward the other end from the via hole at the center on the other surface of the base;
Forming a resistor layer on the substrate from the fourth electrode;
A second electrode forming step of forming the second electrode on the other end of the base from above the resistor layer. A method of manufacturing a chip-type composite component formed by forming a thermistor and a resistance element on both surfaces of a base made of an insulating material,
A via hole forming step of forming a via hole penetrating a central portion of the base,
A first electrode forming step of forming a first electrode extending to the center from one end on one surface of the base;
A thermistor layer forming step of forming the thermistor layer on the central part of the base from the first electrode;
A third electrode forming step of forming a third electrode from the thermistor layer to the via hole formed on the base;
A second electrode forming step of forming a second electrode extending to the center from the other end on the other surface of the base;
A resistor layer forming step of forming a resistor layer from the second electrode on the base central portion;
A method of manufacturing a chip-type composite component, comprising a fourth electrode forming step of forming a fourth electrode from the upper surface of the resistor layer to the base and extending to the via hole. A method of manufacturing a chip-type composite component formed by forming a thermistor and a resistance element on both surfaces of a base made of an insulating material,
A via hole forming step of forming a via hole penetrating a central portion of the base,
A third electrode forming step of forming a third electrode in one end direction from the via hole on one surface of the base;
A thermistor layer forming step of forming a thermistor layer on the vicinity of one end of the base from above the three electrodes;
A first electrode forming step of forming a first electrode on the one end face of the base from above the thermistor layer;
Forming a fourth electrode from the via hole on the other surface of the base toward the other end,
A resistor layer forming step of forming a resistor layer on the fourth electrode and near the other end of the base;
A second electrode forming step of forming a second electrode on the other end surface of the base from above the resistor layer. A method of manufacturing a chip-type composite component formed by forming a thermistor and a resistance element on both surfaces of a base made of an insulating material,
A via hole forming step of forming a via hole penetrating a central portion of the base,
A first electrode forming step of forming a first electrode from one end surface to the center on one surface of the base;
A third electrode forming step of forming a third electrode having a predetermined distance from the center of the first electrode and reaching the via hole;
A thermistor layer forming step of forming a thermistor layer across the first electrode and the third electrode;
A second electrode forming step of forming a second electrode at the center from the other end surface on the other surface of the base;
A third electrode forming step of forming a fourth electrode having a predetermined distance from the center of the second electrode and reaching the via hole;
A method for manufacturing a chip-type composite component, comprising: a resistor layer forming step of forming a resistor layer across the second electrode and the fourth electrode. Thereafter, a protective coat forming step of forming a coat layer on both surfaces of the base except for the end to form a protective coat,
12. The chip type composite according to claim 8, further comprising: an external electrode forming step of forming external connection electrodes connected to the first electrode and the second electrode, respectively. The method of manufacturing the part. 13. The method for manufacturing a chip-type composite component according to claim 12, further comprising a display material adding step of adding a display material to the protective coat on one surface of the substrate surface.

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