JP2004024953A - Fine particle and fine particle production method - Google Patents
Fine particle and fine particle production method Download PDFInfo
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- JP2004024953A JP2004024953A JP2002181907A JP2002181907A JP2004024953A JP 2004024953 A JP2004024953 A JP 2004024953A JP 2002181907 A JP2002181907 A JP 2002181907A JP 2002181907 A JP2002181907 A JP 2002181907A JP 2004024953 A JP2004024953 A JP 2004024953A
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- SJAKDAHABMRORI-UHFFFAOYSA-N C(C1)C23C11C2CCC31 Chemical compound C(C1)C23C11C2CCC31 SJAKDAHABMRORI-UHFFFAOYSA-N 0.000 description 1
- BFAIMMGBWGSCPF-UHFFFAOYSA-N OC1=CCC=C1 Chemical compound OC1=CCC=C1 BFAIMMGBWGSCPF-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
【０００１】
【発明の属する技術分野】
本発明は、紫外線励起により発光を示す微粒子および、その製造方法である。
【０００２】
【従来の技術及び発明が解決しようとする課題】
現在電子機器の表示装置としては、ブラウン管、液晶、プラズマまたは発光ダイオードなどが使用されている。これらは複雑で高価なため、より安価な表示装置が必要とされている。このためには、シリコンなど安価な素材を用いた発光材料の開発が不可欠である。一方、シリコンは微粒子にしないと発光を示さないという特性がある。
【０００３】
従来、発光を示す結晶化した微粒子作製のためには、溶液からの析出あるいは化学蒸着法を用いる必要があった。
【０００４】
これらいずれの工程でも、結晶化のためには微粒子の熱処理が必要であった。さらに、発光を示す粒子は粒径数ｎｍ以下のものであり、その粒径が波長に関係があるため、発光波長を選ぶためには粒径分布が狭い微粒子が必要で、そのために粒子の分級が必要であった。熱処理、分級はどちらも製造コストを押し上げる要因であった。
【０００５】
本発明は、電子機器の表示装置に安価な発光材料が求められていることに着目し、熱処理や分級無しに発光する微粒子を作製することが技術的課題である。
【０００６】
【課題を解決するための手段】
添付図面を参照して本発明の要旨を説明する。
【０００７】
プラズマを急冷することにより製造したことを特徴とする微粒子。
【０００８】
また、前記微粒子がシリコンであることを特徴とする請求項１記載の微粒子に係るものである。
【０００９】
また、プラズマを急冷することにより製造することを特徴とする微粒子の製造方法に係るものである。
【００１０】
また、前記プラズマが密度１０１８ｃｍ−３以上の高密度プラズマであることを特徴とする請求項３記載の微粒子の製造方法に係るものである。
【００１１】
また、前記プラズマがパルスイオンビームを用いて発生したものであることを特徴とする請求項３，４のいずれか１項に記載の微粒子の製造方法に係るものである。
【００１２】
また、ターゲットにイオンビームを照射してプラズマを発生させ、このプラズマをガス又は冷却した部材によって急冷することで微粒子を作製することを特徴とする請求項３〜５のいずれか１項に記載の微粒子の製造方法に係るものである。
【００１３】
【発明の実施の形態】
好適と考える本発明の実施の形態（発明をどのように実施するか）を、図面に基づいてその作用効果を示して簡単に説明する。
【００１４】
例えば、イオンビームを、シリコンなどのターゲットに照射し、発生した高密度のプラズマを、ガス中または冷却した基板上で急冷することにより微粒子が作製される。
【００１５】
【実施例】
本発明の具体的な実施例について図面に基づいて説明する。
【００１６】
図１に示すように、室温に保持した真空チャンバー１中に、３Ｔｏｒｒのヘリウムガス２を充填し，基板ホルダー３上に単結晶シリコン基板４を設置した。この基板ホルダー３には液体窒素５を導入し、マイナス１０℃に冷却した。真空チャンバー１には単結晶シリコンターゲット６を設置し、これに水素イオンビーム７を照射することにより密度１０１８／ｃｍ３の高密度プラズマ８が発生した。この高密度プラズマをヘリウムガス２と基板で急冷し、微粒子９を基板４上に堆積させた。
【００１７】
図２に堆積した微粒子の粉末Ｘ線回折図形を示す。ピークの位置は、シリコンのそれの位置と一致した。このことから基板４上に結晶化したシリコン微粒子が堆積したことがわかった。
【００１８】
図３に微粒子の粒径分布を示す。プラズマの急冷により、粒径分布の狭い微粒子が作製できたことがわかった。
【００１９】
図４に微粒子に紫外線を照射したときの発光スペクトルを示す。可視光で発光を示していることがわかった。
【００２０】
尚、本発明は、本実施例に限られるものではなく、各構成要件の具体的構成は適宜設計し得るものである。
【００２１】
【発明の効果】
本発明は上述のように構成したから、請求項１，３の発明によれば、微粒子を熱処理や分級無しに作製することが可能となる。
【００２２】
また、請求項２記載の発明によれば、よりコストの安いシリコンの使用を可能にし、発光微粒子を安価に作製ができることとなる。
【００２３】
また、請求項４記載の発明によれば、高密度プラズマから大量に微粒子が製造でき、低コストで発光微粒子を作製できることとなる。
【００２４】
また、請求項５記載の発明によれば、エネルギー変換効率の高いパルスイオンビームを用いることにより、一層低コストで発光微粒子を作製できることとなる。
【００２５】
また、請求項６記載の発明によれば、大量の微粒子を低コストで作製できる極めて実用性に秀れた画期的な微粒子の製造方法となる。
【図面の簡単な説明】
【図１】本実施例における微粒子作製装置の概略構成説明図である。
【図２】本実施例における微粒子の粉末Ｘ線回折図形である。
【図３】本実施例における微粒子の粒径分布である。
【図４】本実施例における微粒子からの、紫外線照射下での発光スペクトルである。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to fine particles that emit light when excited by ultraviolet light, and a method for producing the fine particles.
[0002]
Problems to be solved by the prior art and the invention
At present, as a display device of an electronic device, a cathode ray tube, a liquid crystal, a plasma or a light emitting diode is used. Since these are complicated and expensive, cheaper display devices are needed. For this purpose, it is essential to develop a light emitting material using an inexpensive material such as silicon. On the other hand, silicon does not emit light unless it is made into fine particles.
[0003]
Conventionally, in order to produce crystallized fine particles exhibiting light emission, it was necessary to use precipitation from a solution or chemical vapor deposition.
[0004]
In any of these steps, heat treatment of the fine particles was required for crystallization. Further, the particles that emit light have a particle size of several nm or less, and since the particle size is related to the wavelength, fine particles having a narrow particle size distribution are required to select the emission wavelength, and therefore, classification of the particles is required. Was needed. Both heat treatment and classification were factors that increased production costs.
[0005]
The present invention focuses on the need for an inexpensive light-emitting material for a display device of an electronic device, and has a technical problem to produce fine particles that emit light without heat treatment or classification.
[0006]
[Means for Solving the Problems]
The gist of the present invention will be described with reference to the accompanying drawings.
[0007]
Fine particles characterized by being produced by rapidly cooling plasma.
[0008]
Further, the present invention relates to the fine particles according to claim 1, wherein the fine particles are silicon.
[0009]
Further, the present invention relates to a method for producing fine particles, which is produced by rapidly cooling plasma.
[0010]
4. The method according to claim 3, wherein the plasma is a high-density plasma having a density of 10 18 cm −3 or more.
[0011]
The method according to any one of claims 3 and 4, wherein the plasma is generated using a pulsed ion beam.
[0012]
The method according to any one of claims 3 to 5, wherein the target is irradiated with an ion beam to generate plasma, and the plasma is rapidly cooled by a gas or a cooled member to produce fine particles. The present invention relates to a method for producing fine particles.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
Preferred embodiments of the present invention (how to implement the invention) will be briefly described with reference to the drawings, showing the operational effects thereof.
[0014]
For example, fine particles are produced by irradiating a target such as silicon with an ion beam and rapidly cooling the generated high-density plasma in a gas or on a cooled substrate.
[0015]
【Example】
A specific embodiment of the present invention will be described with reference to the drawings.
[0016]
As shown in FIG. 1, a helium gas 2 at 3 Torr was charged into a vacuum chamber 1 kept at room temperature, and a single crystal silicon substrate 4 was placed on a substrate holder 3. Liquid nitrogen 5 was introduced into the substrate holder 3 and cooled to -10 ° C. A single-crystal silicon target 6 was placed in the vacuum chamber 1 and irradiated with a hydrogen ion beam 7 to generate a high-density plasma 8 having a density of 10 18 / cm 3 . The high-density plasma was quenched with the helium gas 2 and the substrate, and the fine particles 9 were deposited on the substrate 4.
[0017]
FIG. 2 shows a powder X-ray diffraction pattern of the deposited fine particles. The position of the peak coincided with that of silicon. This indicates that crystallized silicon fine particles were deposited on the substrate 4.
[0018]
FIG. 3 shows the particle size distribution of the fine particles. It was found that fine particles with a narrow particle size distribution could be produced by rapid cooling of the plasma.
[0019]
FIG. 4 shows an emission spectrum when the fine particles are irradiated with ultraviolet rays. It turned out that it emitted light by visible light.
[0020]
It should be noted that the present invention is not limited to the present embodiment, and a specific configuration of each component can be appropriately designed.
[0021]
【The invention's effect】
Since the present invention is configured as described above, according to the first and third aspects of the present invention, fine particles can be produced without heat treatment or classification.
[0022]
Further, according to the second aspect of the present invention, it is possible to use silicon at lower cost, and it is possible to produce light-emitting fine particles at low cost.
[0023]
According to the fourth aspect of the present invention, a large amount of fine particles can be produced from high-density plasma, and luminescent fine particles can be produced at low cost.
[0024]
According to the fifth aspect of the present invention, light-emitting fine particles can be produced at lower cost by using a pulsed ion beam having high energy conversion efficiency.
[0025]
Further, according to the invention described in claim 6, an epoch-making epoch-making method of extremely fine particles capable of producing a large amount of fine particles at low cost.
[Brief description of the drawings]
FIG. 1 is a schematic configuration explanatory view of a fine particle producing apparatus in the present embodiment.
FIG. 2 is a powder X-ray diffraction pattern of fine particles in the present example.
FIG. 3 is a particle size distribution of fine particles in the present example.
FIG. 4 is an emission spectrum under ultraviolet irradiation from fine particles in this example.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002181907A JP4200271B2 (en) | 2002-06-21 | 2002-06-21 | Method for producing fine particles |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002181907A JP4200271B2 (en) | 2002-06-21 | 2002-06-21 | Method for producing fine particles |
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| Publication Number | Publication Date |
|---|---|
| JP2004024953A true JP2004024953A (en) | 2004-01-29 |
| JP4200271B2 JP4200271B2 (en) | 2008-12-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002181907A Expired - Fee Related JP4200271B2 (en) | 2002-06-21 | 2002-06-21 | Method for producing fine particles |
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| Country | Link |
|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007137700A (en) * | 2005-11-16 | 2007-06-07 | Univ Nagoya | Method for manufacturing fluorescent silicon particle, fluorescent silicon particle and method for observing biological substance by using the particle |
| US9115539B2 (en) | 2009-09-24 | 2015-08-25 | Zipwall, Llc | Partition mounting systems, partition assembly kits, double-sided adhesive tape and methods of installation and application |
| US11230091B2 (en) | 2009-09-24 | 2022-01-25 | Zipwall, Llc | Partition mounting systems, partition assembly kits, double-sided adhesive tape and methods of installation and application |
-
2002
- 2002-06-21 JP JP2002181907A patent/JP4200271B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007137700A (en) * | 2005-11-16 | 2007-06-07 | Univ Nagoya | Method for manufacturing fluorescent silicon particle, fluorescent silicon particle and method for observing biological substance by using the particle |
| US9115539B2 (en) | 2009-09-24 | 2015-08-25 | Zipwall, Llc | Partition mounting systems, partition assembly kits, double-sided adhesive tape and methods of installation and application |
| US11230091B2 (en) | 2009-09-24 | 2022-01-25 | Zipwall, Llc | Partition mounting systems, partition assembly kits, double-sided adhesive tape and methods of installation and application |
| US11643831B2 (en) | 2009-09-24 | 2023-05-09 | Zipwall, Llc | Partition mounting systems, partition assembly kits, double-sided adhesive tape and methods of installation and application |
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| Publication number | Publication date |
|---|---|
| JP4200271B2 (en) | 2008-12-24 |
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