JP2004022997A - Process for producing semiconductor wafer applied with adhesives - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enhance the bonding strength between the back surface 4 of a semiconductor wafer 2 and adhesives 5. <P>SOLUTION: Circuit plane 3 of the semiconductor wafer 2 is vacuum attracted onto the supporting surface 11 of a supporting member 9. Adhesives 5a applied to a sheet 6 is bonded to the back surface 4 of the semiconductor wafer 2, and a roll 16 is moved being pressed through a separator 7. The adhesives 5 can thereby be pasted to the back surface 4 of the semiconductor wafer 2 with sufficiently high pressure being heated at a sufficiently high temperature. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a semiconductor wafer with an adhesive, in which an adhesive is provided on a back surface of a semiconductor wafer on which no electric circuit is formed.
[0002]
[Prior art]
Conventionally, in order to bond a semiconductor chip to a support such as a lead frame or a substrate using a film adhesive, a film adhesive is provided on a back surface of the semiconductor wafer on which no electric circuit is formed, and then the adhesive is attached. A method has been adopted in which individual semiconductor chips are obtained by dicing a semiconductor wafer and the semiconductor chips are bonded to a support.
[0003]
FIG. 7 is a sectional view showing a typical first prior art in which an adhesive is provided on the back surface of a semiconductor wafer. This first prior art is disclosed, for example, in Japanese Patent Laid-Open No. 6-302629. In this prior art, as shown in FIG. 7, a carrier sheet 31 with an adhesive is prepared by applying an adhesive 33 in the form of a film on a carrier film 31 to the size of a semiconductor wafer 32 and drying the carrier sheet. The adhesive 33 is thermally transferred to the back surface 35 of the semiconductor wafer 32. After that, the carrier film 31 is cut along the outer shape of the semiconductor wafer 32 by the blade 36. In this prior art, it is necessary to form an adhesive 33 on the carrier film 31 to the size of the semiconductor wafer 32, and it is necessary to apply the adhesive 33 to the back surface 35 of the semiconductor wafer 32 after performing accurate alignment. is there. Therefore, workability is poor.
[0004]
Further, in the first prior art, when the adhesive with a carrier film is attached to the back surface of the semiconductor wafer and the carrier film is left, the difference in the coefficient of thermal expansion between the carrier film and the semiconductor wafer, Due to the heat shrinkage of the semiconductor wafer, the semiconductor wafer is warped and deformed. As a result, when the semiconductor wafer is vacuum-adsorbed, transported and stored in a cassette, the semiconductor wafer cannot be transported reliably. It has been pointed out that a semiconductor wafer may be damaged due to collision of the semiconductor wafer with the cassette or the cassette.
[0005]
FIG. 8 is a cross-sectional view showing a typical second prior art in which an adhesive is provided on the back surface of a semiconductor wafer. This second prior art is disclosed, for example, in Japanese Patent Application Laid-Open No. H11-219962. The single-layer adhesive 38 formed on the carrier film 37 is peeled off from the carrier film 37 and placed on the back surface 41 of the semiconductor wafer 39, and the adhesive 38 is applied to the back surface 41 of the semiconductor wafer 39 using a roll 42. Pressure heating. Thereafter, the adhesive 38 is cut along the outer shape of the semiconductor wafer 39 by the blade 43. Thus, a wafer with an adhesive is obtained. In this prior art, since the adhesive 38 and the roll 42 come into contact with each other, pressure and heat must be applied at a relatively low temperature at which the adhesive does not adhere to the roll. As a result, a sufficient adhesive strength between the adhesive and the back surface of the semiconductor wafer cannot be obtained. If the single layer adhesive is thin and the adhesive has a low modulus of elasticity, the adhesive is easy to stretch and difficult to handle.
[0006]
[Problems to be solved by the invention]
An object of the present invention is to improve the adhesive strength between the adhesive and the backside of the semiconductor wafer, which is excellent in productivity, and furthermore, so that the semiconductor wafer does not warp, a thin and easily stretchable adhesive film, without wrinkling, An object of the present invention is to provide a method of manufacturing a semiconductor wafer with an adhesive which realizes a method of attaching the semiconductor wafer.
[0007]
[Means for Solving the Problems]
The present invention, the adhesive of the adhesive sheet provided with an adhesive on one surface of the separator, on the back surface of the semiconductor wafer on which the electric circuit is not formed, in a heated state, pressurized through the separator Pasting step;
On the semiconductor wafer side, the adhesive along the outer peripheral portion of the semiconductor wafer, while cutting over the entire thickness of the adhesive, the separator, the step of cutting only a part of the thickness of the separator,
Peeling off the separator from the adhesive.
[0008]
According to the present invention, a sheet 6 with an adhesive is prepared, and the adhesive is applied to the back surface 4 of the semiconductor wafer 2 through a separator 7 in a heated state. By pressing the adhesive through a separator instead of directly, the adhesive does not adhere to a member to be pressed, such as the roll 16, and the heating temperature is relatively high. This makes it possible to sufficiently increase the adhesive strength between the adhesive and the back surface of the semiconductor wafer.
[0009]
With the adhesive stuck to the back surface of the semiconductor wafer in this manner, the adhesive-bonded sheet was half-cut with a blade from the semiconductor wafer side, that is, the adhesive was formed while cutting the adhesive over its entire thickness. The separator is cut on the adhesive side only a part of the thickness of the separator. Therefore, the separator is not completely cut in the thickness direction.
[0010]
Therefore, next, the separator is peeled and removed from the surface of the adhesive stuck to the back surface of the semiconductor wafer. Thus, the semiconductor wafer with adhesive 1 in which the adhesive is stuck over the entire back surface of the semiconductor wafer is manufactured.
[0011]
Therefore, the work of bonding the adhesive of the sheet with the adhesive to the back surface of the semiconductor wafer is easy, and the bonding strength between the adhesive and the back surface of the semiconductor wafer can be improved. Moreover, since the separator is peeled off at the bonding temperature, the semiconductor wafer does not warp due to the difference in the coefficient of thermal expansion based on the temperature difference between the bonding temperature with the separator and room temperature. Therefore, there is no possibility that the semiconductor wafer will be warped due to the difference in the coefficient of thermal expansion between the semiconductor wafer and the separator, and the semiconductor wafer remains flat and does not bend. Therefore, such a semiconductor wafer can be transported by vacuum suction, for example, and can be accurately stored in a cassette. The warpage of the semiconductor wafer may cause the semiconductor wafer to collide with an obstacle and be damaged. Bugs are avoided.
[0012]
Further, the present invention is characterized in that the cutting step and the peeling step are performed while keeping the heating state.
[0013]
According to the present invention, in a heated state, the adhesive of the sheet with the adhesive is pressed and adhered to the back surface of the semiconductor wafer, and the separator is cut while cutting the adhesive while maintaining the heated state. A cutting step of cutting only a part is performed, and a peeling step of peeling the next separator from the adhesive is performed. Therefore, the separator is peeled off before a large temperature change occurs in the heated adhesive-attached sheet and the semiconductor wafer, so that warpage of the semiconductor wafer can be prevented.
[0014]
In the state where the temperature of the semiconductor wafer on which the adhesive is stuck on the back surface is returned to room temperature, the force of the adhesive that causes the semiconductor wafer to bend and deform on the back surface due to a temperature change from the heating state to room temperature is It is relatively small and is adjusted so that the semiconductor wafer does not warp. Since the semiconductor wafer is not warped in this manner, the semiconductor wafer can be easily transported and stored in a cassette accurately, and there is no possibility that the semiconductor wafer may be damaged by collision with an obstacle. Absent.
[0015]
Further, the present invention also provides a method for applying the pressure of the adhesive of a sheet with an adhesive in which an adhesive is provided on one surface of a separator to the back surface of the semiconductor wafer where the electric circuit is not formed, in a heated state, through the separator. The adhesive strength between the separator and the adhesive is less than the adhesive strength between the semiconductor wafer and the adhesive, and the thickness, elastic modulus, linear expansion coefficient, and glass transition temperature Tg of the adhesive are changed from the heating state to room temperature. When the temperature changes to a value at which the semiconductor wafer is not warped,
On the semiconductor wafer side, the adhesive along the outer peripheral portion of the semiconductor wafer, in the heating state, while cutting over the entire thickness of the adhesive, the separator, cutting only a part of the thickness of the separator, ,
Separating the separator from the adhesive in the heated state.
[0016]
According to the present invention, in a state in which the adhesive of the sheet with the adhesive is attached to the back surface of the semiconductor wafer, the adhesive strength between the separator and the adhesive is small, and the adhesive strength between the back surface of the semiconductor wafer and the adhesive is large. So, after cutting the adhesive and a part of the separator in the thickness direction, when the separator is peeled off from the adhesive in a direction away from the back surface of the semiconductor wafer and pulled, the adhesive is firmly adhered to the back surface of the semiconductor wafer It is certain that it will be kept in state. When the material of the separator is, for example, a polyolefin-based synthetic resin such as polypropylene, the adhesive strength with an adhesive is relatively small, which is preferable. When the separator is, for example, a polyester resin such as polyethylene terephthalate (PET), a silicone resin layer is previously formed on the surface of the separator, and an adhesive is laminated on the silicone resin to form a sheet with an adhesive. It reduces the adhesive strength between the silicone resin and the adhesive. On the other hand, the adhesive strength between the back surface of the semiconductor wafer and the adhesive is relatively large.
[0017]
According to the present invention, when the temperature is returned to a normal temperature from a heating state in which the adhesive is attached to the back surface of the semiconductor wafer and the temperature is changed to a normal temperature, the semiconductor wafer does not warp due to the adhesive. Is relatively thin, the elastic modulus of the adhesive is relatively small, and the glass transition temperature (Tg), which is the temperature in the heated state, is lower than 80 ° C., for example, about 50 ° C. Choose the composition of the adhesive. Thus, the occurrence of warpage of the semiconductor wafer is prevented.
[0018]
Further, the separator of the present invention is characterized in that it is thicker and has a higher elastic modulus than the adhesive.
[0019]
According to the present invention, the thickness of the separator provided with the adhesive is made larger than the thickness of the adhesive, and the elastic modulus of the separator is made of a material larger than the elastic modulus of the adhesive. In the above-described step of attaching to the back surface of the semiconductor wafer, the adhesive-attached sheet is accurately attached to the back surface of the semiconductor wafer without wrinkling of the adhesive-attached sheet and without stretching and deforming the sheet with the adhesive. It becomes possible to attach.
[0020]
Further, the present invention supports the circuit surface on which the electric circuit of the semiconductor wafer is formed on the support surface of the heated support member,
The adhesive may be attached to the back surface of the semiconductor wafer.
[0021]
Further, according to the present invention, a ventilation hole is formed on the support surface,
The vent hole is set to a negative pressure by a negative pressure source, and the circuit surface of the semiconductor wafer is vacuum-adsorbed on the support surface.
[0022]
According to the present invention, the circuit surface of the semiconductor wafer is supported on the support surface 11 of the support member 9 by, for example, vacuum suction, and the support member is heated to allow the back surface 4 of the semiconductor wafer 2 to adhere to the adhesive 5. A high temperature state during pressurization can be obtained. Therefore, the adhesive strength between the back surface 4 of the semiconductor wafer 2 and the adhesive 5 can be reliably improved. In addition to heating the support member 9, a member that presses the adhesive via the separator is also heated, so that the adhesive strength can be further improved.
[0023]
Further, the present invention is characterized in that the separator of the sheet with the adhesive is pressed toward the back surface of the semiconductor wafer while moving the roll.
[0024]
According to the present invention, as shown in FIG. 4, a member for pressing the adhesive 5 to the back surface 4 of the semiconductor wafer 21 via the separator 7 is a roll 16, and this roll is pressed against the separator 7 to adhere. The agent is pressed on the back surface of the semiconductor wafer. In this way, it is possible to easily apply the adhesive to the back surface of the semiconductor wafer with a desired large pressure to improve the adhesive strength.
[0025]
In the present invention, the separator is a thermoplastic synthetic resin,
The adhesive is characterized by containing a thermoplastic and thermosetting synthetic resin.
[0026]
According to the present invention, the separator of the sheet with the adhesive may be, for example, polypropylene, polyester, or the like, and the adhesive may be a material containing, for example, thermoplastic polyimide, and is not particularly limited.
[0027]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 is a simplified cross-sectional view showing a part of a manufacturing process of a semiconductor wafer 1 with an adhesive according to one embodiment of the present invention. An adhesive 5 is attached to the entire back surface 4 of the semiconductor wafer 2 opposite to the circuit surface 3. The semiconductor wafer 2 has, for example, a substantially circular thin plate shape.
[0028]
FIG. 2 is a cross-sectional view illustrating the overall configuration of the sheet with adhesive 6 having the adhesive 5. The adhesive 5 is formed on one surface below the separator 7 in FIG. 2 as indicated by reference numeral 5a. Separator 7 has a thickness of, for example, 50 μm, and adhesive 5 has a thickness smaller than that of separator 7, for example, a thickness of 20 μm. First, such an adhesive-attached sheet 6 is prepared. In another embodiment of the present invention, a cover film is arranged on the adhesive 5a of the sheet 6, and a long strip having a total of three layers of the separator 7, the adhesive 5a and the cover film is wound into a roll and prepared in advance. In addition, the adhesive 5a of the sheet 6 may be attached to the semiconductor wafer 2 as shown in FIG. 1 while the cover film is peeled off from the long strip of the roll.
[0029]
FIG. 3 is a cross-sectional view showing a state where the semiconductor wafer 2 is supported by the support member 9. The circuit surface 3 of the semiconductor wafer 2 is placed and supported on a horizontal support surface 11 of the support member 9. The circuit surface 3 of the semiconductor wafer 2 is a surface facing an electric circuit. The aforementioned adhesive 5 is attached to the back surface 4.
[0030]
The support member 9 is formed with a plurality of ventilation holes 12 that are open toward the support surface 11 interspersed. The ventilation hole 12 communicates with the negative pressure chamber 13. In another embodiment of the present invention, the support member 9 is made of a porous material, and only the support surface 11 for supporting the semiconductor wafer 2 is opened, and the remaining peripheral surface is closed with a sealant. It may be realized by a configuration. The negative pressure chamber 13 is connected to a negative pressure source 15 such as a pump via a pipe 14. Thus, the circuit surface 3 of the semiconductor wafer 2 is vacuum-sucked on the support surface 11 of the support member 9 in a flat state. A heating unit 19 such as an electric heater is provided at an attachment portion of the support member 9.
[0031]
FIG. 4 is a cross-sectional view showing a step of attaching the sheet with adhesive 6 on the back surface 4 of the semiconductor wafer 2 on the support member 9 shown in FIG. On the back surface 4 of the semiconductor wafer 2, an adhesive 5 of a sheet 6 with an adhesive is attached. The roll 16 has a horizontal axis perpendicular to the plane of FIG. 4 and is moved in the movement direction 18 while rolling as indicated by an arrow 17. Thus, the adhesive 5 of the sheet with adhesive 6 is pressed by the roll 6 via the separator 7.
[0032]
As a result, the back surface 4 of the semiconductor wafer 2 is heated to a relatively high temperature suitable for attaching the adhesive 5. In this heated state, a sufficient adhesive strength between the back surface 4 of the semiconductor wafer 2 and the adhesive 5 can be obtained. The roll 16 may also include a built-in heater to heat the adhesive 5 when the adhesive 5 is pressed through the separator 7, whereby the adhesive 5 and the back surface 4 of the semiconductor wafer 2 may be heated. Can be more reliably improved. The roll 16 moves in the moving direction 18 from the right end 21 to the left other end 22 of the semiconductor wafer 2 in FIG. As a result, no air bubbles are trapped between the adhesive 5 and the back surface 4 of the semiconductor wafer 2, and no void is generated.
[0033]
The roll 16 presses the adhesive 5 through the separator 7 instead of directly. Therefore, the adhesive 5 does not adhere to the surface of the roll 16, and the adhesive 5 is securely attached to the back surface 4 of the semiconductor wafer 2, and the outer peripheral surface of the roll 16 and the separator 7 in FIG. The upper surface is in smooth contact, and pressurization can be performed smoothly.
[0034]
FIG. 5 is a cross-sectional view showing a state in which the sheet with adhesive 6 is adhered to the back surface 4 of the semiconductor wafer 2 by the steps of FIG. In this state, the adhesive 5 is applied along the outer peripheral portion 25 of the semiconductor wafer 2 on the semiconductor wafer 2 side (the lower part in FIG. While being cut as shown, the separator 7 is cut at the same time, as indicated by reference numeral 27, only a part of the thickness of the separator 7, and the adhesive-attached sheet 6 is so-called half-cut.
[0035]
After cutting along the outer peripheral portion 25 of the semiconductor wafer 2 using the cutting tool 24 as shown by reference numerals 26 and 27 in FIG. 5, as shown in FIG. 1 (for example, on the left side of FIG. 1), the adhesive-attached sheet 6 is displaced away from the semiconductor wafer 2 as indicated by an arrow 28. Thus, the separator 7 is peeled from the adhesive 5. In FIG. 1, the separator 7 to which the remaining adhesive 5a is adhered is wound up and discarded while the adhesive 5 attached to the semiconductor wafer 2 is left. The adhesive 5 remains attached to the back surface 4 of the semiconductor wafer 2 with a large adhesive strength as described above. As shown in FIG. 5 described above, when the cutting step by the blade 24 and the peeling step of peeling the separator 7 are performed, the heating state by the heating means 19 is maintained.
[0036]
FIG. 6 is a cross-sectional view of the semiconductor wafer with adhesive 1 completed by bonding the adhesive 5 to the back surface 4 of the semiconductor wafer 2. After the separator 7 is separated from the adhesive 5 on the semiconductor wafer 2 as shown in FIG. 1 described above, the negative pressure source 15 is stopped, and the semiconductor wafer 2 is removed from the support surface 11 of the support member 9.
[0037]
The experimental results of the present inventor will be described. In the embodiment shown in FIGS. 1 to 6 described above, the sheet 6 with an adhesive shown in FIG. 2 has a 20 μm-thick adhesive 5 on a separator 7 made of a 50 μm-thick surface-treated PET (polyethylene terephthalate) film. It is provided and configured.
[0038]
The adhesive 5 may be, for example, a compound of a solvent-soluble silicone-modified polyimide and a thermosetting resin such as an epoxy resin, an epoxy resin curing agent, a curing accelerator, a filler, a coupling agent, or the like. A thermosetting resin such as a compound of an epoxy resin, an epoxy resin curing agent, a curing accelerator, a filler, a coupling agent, and the like may be used.
[0039]
The method of making the adhesive used in this experiment is as follows. In a 300 ml four-necked flask equipped with a thermometer and a stirrer, 7.162 g of 1,3-bis (3-aminophenokine) benzene, silicone diamine (α, ω-bis (3-aminopropyl) polydimethylsiloxane, 33.299 g of average molecular weight (906), 84 g of N-methyl-pyrrolidone and 56 g of xylene were taken, and stirred under a nitrogen flow to dissolve the diamine. While cooling the flask in an ice-water bath, 19.539 g of 4,4'-oxydiphthalic dianhydride was added in small portions. The reaction was carried out at 5 ° C. for 4 hours to obtain a polyamic acid varnish.
[0040]
Thereafter, a Dean-Stark tube was attached to the flask, the system was changed to an oil bath, and the system was heated to 150 ° C. to remove generated water from the system. Heating was continued for 4 hours to obtain a solvent-soluble polyimide.
[0041]
11.4 parts of cresol novolak type epoxy resin (EOCN104S, epoxy equivalent 218 g / aq) manufactured by Nippon Kayaku Co., Ltd., and dicyclopentadiene-modified phenol novolak manufactured by Nippon Petrochemical Co., Ltd. with respect to 100 parts of the solvent-soluble polyimide. A varnish was prepared by mixing 8.63 parts of a mold curing agent (DPP6115H) and 0.1 parts of a curing accelerator (2MAOK-PW) manufactured by Shikoku Chemicals Corporation.
[0042]
The varnish was coated on a surface-treated PET (DuPont Toray Co., Ltd., surface treatment 31, thickness: 50 μm), dried at 90 ° C. for 20 minutes to form an adhesive layer having a thickness of 20 μm. Obtained. The separator 7 of the sheet with adhesive 6 is thicker than the adhesive 5 as described above, and has a higher elastic modulus. The adhesive strength between the separator and the adhesive 5 is less than the adhesive strength between the back surface 4 of the semiconductor wafer 2 and the adhesive 5. The thickness, elastic modulus, and glass transition temperature Tg of the adhesive 5 are selected so that the semiconductor wafer 2 does not warp when the temperature changes from the state of heating by the above-described heating means 19 to room temperature.
[0043]
As shown in FIG. 3, the semiconductor wafer 2 has a diameter of 8 inches and is heated to 160 ° C. Then, as shown in FIG. 4, the adhesive 5 of the sheet with adhesive 6 was pressed against the back surface 4 of the semiconductor wafer 2 using a roll 16. After that, as shown in FIG. 5, the semiconductor wafer 2 was half-cut from the side of the semiconductor wafer 2 using the blade 24 while being heated, and the separator 7 was peeled off as shown in FIG. As a result, it was confirmed that the adhesive 5 was properly attached to the back surface 4 of the semiconductor wafer 2 as shown in FIG. The semiconductor wafer 2 did not warp.
[0044]
【The invention's effect】
According to the present invention, since the adhesive of the sheet with the adhesive is applied to the back surface of the semiconductor wafer by pressing through the separator, the adhesive is easily attached to the entire back surface of the semiconductor wafer. And the productivity is excellent, and since the pressing is performed through the separator as described above, there is no possibility that the adhesive adheres to a member such as a roll for pressing, The adhesive strength between the back surface of the semiconductor wafer and the adhesive can be improved.
[0045]
Furthermore, since only a part of the thickness of the separator is cut at the outer peripheral portion of the semiconductor wafer, when the separator is peeled from the adhesive, the adhesive can be accurately adhered over the entire back surface of the semiconductor wafer, and the separator can be removed. The peeling of the semiconductor wafer prevents the semiconductor wafer from being warped or deformed due to the difference in the coefficient of thermal expansion between the semiconductor wafer and the separator. This makes it possible to accurately and easily transport the semiconductor wafer to which the adhesive has been attached, for example, by vacuum suction, and that the warped semiconductor wafer collides with an obstacle and is damaged. There is no.
[0046]
Further, according to the present invention, even when the adhesive is soft and thin, it can be attached to the back surface of the semiconductor wafer without wrinkling.
[Brief description of the drawings]
FIG. 1 is a simplified cross-sectional view showing a part of a manufacturing process of a semiconductor wafer with an adhesive 1 according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view showing the overall configuration of an adhesive-attached sheet 6 having an adhesive 5;
FIG. 3 is a cross-sectional view showing a state where the semiconductor wafer 2 is supported by a support member 9;
4 is a cross-sectional view showing a step of attaching a sheet with an adhesive 6 on the back surface 4 of the semiconductor wafer 2 on the support member 9 shown in FIG.
FIG. 5 is a cross-sectional view showing a state in which a sheet with an adhesive 6 is adhered to the back surface 4 of the semiconductor wafer 2 by the steps of FIG.
FIG. 6 is a cross-sectional view of the semiconductor wafer with adhesive 1 completed by bonding an adhesive 5 to the back surface 4 of the semiconductor wafer 2;
FIG. 7 is a sectional view of a first prior art.
FIG. 8 is a sectional view of a second prior art.
[Explanation of symbols]
REFERENCE SIGNS LIST 1 semiconductor wafer with adhesive 2 semiconductor wafer 3 circuit surface 4 back surface 5 adhesive 6 sheet with adhesive 7 separator 9 support member 11 support surface 12 ventilation hole 13 negative pressure chamber 14 conduit 15 negative pressure source 16 roll 17 arrow 18 Moving direction 19 Heating means 21 One end 22 Other end 24 Blade 25 Outer peripheral parts 26, 27 Reference numeral 28 Arrow

Claims (8)

Bonding the adhesive of the sheet with the adhesive provided with an adhesive on one surface of the separator to the back surface of the semiconductor wafer where the electric circuit is not formed, in a heated state, by applying pressure through the separator, ,
On the semiconductor wafer side, the adhesive along the outer peripheral portion of the semiconductor wafer, while cutting over the entire thickness of the adhesive, the separator, a step of cutting only a part of the thickness of the separator,
Separating the separator from the adhesive. The method for manufacturing a semiconductor wafer with an adhesive according to claim 1, wherein the cutting step and the peeling step are performed while maintaining the heating state. The adhesive of the sheet with the adhesive provided with the adhesive on one surface of the separator is applied to the back surface of the semiconductor wafer, on which the electric circuit is not formed, by applying a pressure through the separator in a heated state, The adhesive strength between the adhesive and the adhesive was less than the adhesive strength between the semiconductor wafer and the adhesive, and the thickness, elastic modulus, linear expansion coefficient, and glass transition temperature Tg of the adhesive changed from the heated state to room temperature. When the semiconductor wafer is selected to a value that does not cause warping;
On the semiconductor wafer side, the adhesive along the outer peripheral portion of the semiconductor wafer, in the heated state, while cutting over the entire thickness of the adhesive, the separator, cutting only a part of the thickness of the separator, and ,
Separating the separator from the adhesive in the heated state. The method for manufacturing a semiconductor wafer with an adhesive according to claim 1, wherein the separator is thicker and has a higher elastic modulus than the adhesive. The circuit surface on which the electric circuit of the semiconductor wafer is formed is supported on the support surface of the heated support member,
The method for manufacturing a semiconductor wafer with an adhesive according to any one of claims 1 to 4, wherein the adhesive is attached to the back surface of the semiconductor wafer. A vent is formed on the support surface,
6. The method for manufacturing a semiconductor wafer with an adhesive according to claim 5, wherein the air holes are made to have a negative pressure by a negative pressure source, and the circuit surface of the semiconductor wafer is vacuum-adsorbed on the supporting surface. The method for manufacturing a semiconductor wafer with an adhesive according to any one of claims 1 to 6, wherein the separator of the sheet with the adhesive is pressed toward the back surface of the semiconductor wafer while moving the roll. The separator is a thermoplastic synthetic resin,
The method for manufacturing a semiconductor wafer with an adhesive according to claim 1, wherein the adhesive includes a thermoplastic or thermosetting synthetic resin.

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