JP2004022776A - Device and method for treating substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To perform a spin cleaning on substrates having mutually different sizes without generating water marks by using the same device. <P>SOLUTION: A spin cleaner is provided with a treating chamber 4 in which spin cleaning is performed on the substrates W, a chuck 5 which horizontally holds the substrates W in the chamber 4, and a motor 6 which rotates the substrates W held by the chuck 5. The chuck 5 can hold substrates W having different sizes. The treating chamber 4 is composed of a treating chamber main body 8 and a jig 9 which can be attached to and detached from the main body 8. An opening 12 is formed in the jig 9 so as to introduce the outside air into the chamber 4. A plurality of tools 9 having mutually different opening diameters is prepared in advance and the air current in the chamber 4 is controlled by selectively using the tools 9 in accordance with the sizes of the substrates W. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate processing method having a step of rotating a substrate, and a substrate processing apparatus used for carrying out the method.
[0002]
[Prior art]
Conventionally, a dip method has been the mainstream as a method of cleaning a substrate. In this method, the substrate is sequentially immersed in a cleaning liquid tank, a rinsing tank, and a drying tank. If the substrate is small, such as a photomask for LSI, a plurality of substrates can be immersed in the same tank at once. Therefore, batch processing with high throughput can be performed. On the other hand, in the dip method, when cleaning a large-sized substrate, a large-sized tank corresponding to the size is required. Accordingly, a large amount of chemical solution is used for cleaning the substrate. Particularly in recent years, substrates such as photomasks for liquid crystal display devices have tended to become larger. Therefore, it has become difficult to clean such a large substrate by a dip method.
[0003]
Therefore, a single wafer spin cleaning method is used instead of the dipping method. In this method, a processing chamber is constituted by a pair of upper and lower cup-shaped members. In the processing chamber, the substrate is rotated. That is, first, a cleaning liquid is sprayed as a processing liquid onto the substrate while the substrate held horizontally in the processing chamber is rotated (cleaning step). Next, the processing liquid to be sprayed is switched to a rinsing liquid (rinsing step). Next, the supply of the rinsing liquid is stopped, and the substrate is continuously rotated at a high speed for a predetermined period (rotation drying step).
[0004]
Since the spin cleaning method does not require a chemical solution tank unlike the dip method, the apparatus can be downsized. Further, since the cleaning liquid is sprayed on the substrate instead of immersing the substrate in the processing liquid, the processing liquid to be used can be reduced. In the rotation drying step, the processing liquid attached to the substrate can be shaken off by centrifugal force by rotating the substrate at a high speed. Moreover, since an air flow is generated in the processing space, the substrate can be efficiently dried by the air flow. As a result, the substrate cleaning time can be reduced.
[0005]
[Problems to be solved by the invention]
However, when a substrate is subjected to a rotation process, a problem due to an airflow in a processing chamber in which the rotation process is performed is likely to occur. In particular, in the spin cleaning method, a watermark is easily generated on the substrate. The mechanism of generation of the watermark is considered as follows. The processing liquid shaken off from the substrate in the drying step is turned into mist and floats in the processing chamber. The mist may include particles washed from the substrate. Since an airflow is generated in the processing chamber, the mist adheres to the substrate by the airflow. Mist re-attachment becomes more serious when turbulence occurs in the processing chamber. Then, when the re-adhered mist dries, it appears as a watermark. The watermark not only degrades the quality of the pattern formed on the substrate, but also causes the generation of particles. Therefore, when a watermark is generated, it is necessary to wash the substrate again.
[0006]
By the way, the size of the substrate to be subjected to the rotation process may change with the generation. As described above, a photomask for a liquid crystal display device tends to be larger. For example, in the manufacture of a liquid crystal panel, substrates of different sizes are handled. Therefore, if substrates having different sizes can be processed using the same apparatus, it is convenient from the viewpoint of reducing the footprint of the clean room. However, when the size of the substrate is changed, the airflow in the processing chamber changes. Then, the above-mentioned problem of the watermark is induced due to the change in the airflow. In other words, the problem of the watermark becomes particularly serious when the substrates of different sizes are to be rotated using the same apparatus.
[0007]
An object of the present invention is to provide a technique for appropriately rotating substrates of different sizes while using the same apparatus. In particular, it is an object of the present invention to provide a technique for spin-cleaning substrates of different sizes without generating a watermark while using the same apparatus.
[0008]
[Means for Solving the Problems]
According to a first aspect of the present invention, there is provided a processing chamber in which a substrate rotation process is performed, substrate holding means for horizontally holding the substrate in the processing chamber, and rotation for rotating the substrate held by the substrate holding means. Means for rectifying at least substantially the entire area of the upper surface of the substrate in the processing chamber when the substrate is rotated by the rotating means, wherein the substrate holding means has different sizes. In order to enable the substrate to be held, and when the substrates having different sizes are held by the substrate holding means, rectification is formed even over substantially the entire area of the upper surface of the substrate having the different size. Is a substrate processing apparatus capable of controlling the substrate processing.
[0009]
Examples of the substrate include a light-transmitting substrate and a semiconductor substrate. As the translucent substrate, a base material substrate such as a glass substrate for a photomask, a glass substrate for a liquid crystal display device, a glass substrate for a plasma display device, a substrate for an optical disk, or a substrate for a magnetic disk, or a material substrate such as a photomask blank Or a device substrate such as a photomask, a color filter, or a thin film transistor array. The semiconductor substrate includes a silicon wafer and the like. In one embodiment, a liquid crystal display substrate handling different sizes and a photomask substrate used for manufacturing the same are preferably used.
[0010]
The rotation processing includes at least a rotation drying processing. When a series of spin cleaning processes including a spin drying process are performed in the same processing chamber, the entire spin cleaning process corresponds to a spin process. In addition, as the rotation processing, a spin coating processing of a resist solution or the like may be mentioned. When the present invention is applied to spin coating, it is possible to avoid coating unevenness or the like due to turbulence in the processing chamber.
[0011]
According to a second aspect of the present invention, in the first aspect, the processing chamber has an opening for introducing outside air from outside the processing chamber to a substantially central portion of the upper surface of the substrate, and at least the opening A substrate processing apparatus which can control a flow of an airflow in the processing chamber depending on the size of the substrate.
[0012]
According to a specific aspect of the present invention, in the second aspect, the processing chamber includes a jig having the opening and a processing chamber main body that forms the processing chamber together with the jig. There is provided a substrate processing apparatus which is detachable with respect to the processing chamber main body and which can change the size of the opening by changing the jig. In this case, the jig preferably has a tubular portion extending from the opening toward the upper surface of the substrate.
[0013]
According to another specific aspect of the present invention, in the second aspect, there is provided an enlarging / reducing mechanism capable of enlarging / reducing an opening area of the opening, and the opening area is enlarged / reduced by the enlarging / reducing mechanism. A substrate processing apparatus capable of changing the size of a substrate is provided.
In this case, the expansion and contraction mechanism may be automatically controlled, or may be configured to expand and contract the opening area manually.
[0014]
In the case where the enlargement / reduction mechanism is to be automatically controlled, the opening information for specifying the size of the opening such that rectification can be formed over substantially the entire region of the upper surface of the substrate having the size according to the size of the substrate. , A substrate information acquisition unit for acquiring substrate information representing at least the size of a substrate to be processed, and opening information corresponding to the size of the substrate represented by the substrate information acquired by the substrate information acquisition unit And a control unit for controlling the enlargement / reduction mechanism so that the size of the opening is a size specified by the obtained opening information.
[0015]
A third aspect of the present invention is a substrate processing method in the substrate processing apparatus according to the second aspect, including a step of changing a size of the opening according to a size of the substrate. .
[0016]
According to a fourth aspect of the present invention, there is provided a substrate processing method in the substrate processing apparatus according to the second aspect, wherein rectification can be configured over substantially the entire area of the upper surface of the substrate having the size in advance for each size of the substrate. A configuration condition determining step of determining the configuration conditions of the processing chamber including the size of the opening, and a configuration of setting the configuration conditions corresponding to the size of the substrate to be processed among the determined configuration conditions A substrate processing method comprising: a condition setting step; and a rotation processing step of performing a rotation processing on the substrate under the set configuration conditions. In a specific aspect, the rotation processing is a drying processing (rotation drying processing) after cleaning the substrate.
[0017]
After the configuration conditions are once determined in the configuration condition determination step, it is not necessary to perform the configuration condition determination step each time processing is performed. Of the processing conditions of the processing chamber including the size of the opening that can be configured to be rectified over substantially the entire area of the substrate upper surface having a predetermined size for each size of the substrate, A configuration condition corresponding to the size of the substrate may be set, and the substrate may be rotated under the set configuration condition.
[0018]
In a specific embodiment of the present invention, when the processing chamber is configured by the jig and the processing chamber main body, the setting of each configuration condition determined in the configuration condition determining step is performed by replacing the jig. A processing method is provided.
That is, the method includes a jig preparation step of preparing the jig that satisfies the respective configuration conditions determined in the configuration condition determination step in association with the size of each of the substrates, and in the configuration condition setting step, A substrate processing method is provided in which a jig corresponding to the size of a substrate to be processed is selected from the prepared jigs, and the selected jig is attached to the processing chamber body to set the configuration conditions. You. In this case, the configuration condition may include the length of the cylindrical portion of the jig.
[0019]
In another specific aspect of the present invention, in the case where a scaling mechanism that allows the opening area of the opening to be scaled is provided, in the configuration condition setting step, the size of the opening is changed using the scaling mechanism. There is provided a substrate processing method for setting the configuration conditions including an opening area scaling step.
[0020]
According to the present invention, there is also provided a substrate obtained by using any one of the substrate processing methods described above. Further, according to the present invention, there is also provided a method of manufacturing a photomask including a step of processing a substrate using any one of the substrate processing methods described above.
[0021]
BEST MODE FOR CARRYING OUT THE INVENTION
[First Embodiment]
FIG. 1 shows an overall configuration of a single-wafer spin cleaning apparatus according to an embodiment. The spin cleaning apparatus 1 generally includes an LD / ULD section 2 and a spin cleaning processing section 3. The LD / ULD unit 2 has the same unit as a loader (LD) unit for setting a substrate and an unloader (ULD) unit for taking out the substrate subjected to the spin cleaning process in the processing unit 3. Thereby, the space occupied by the spin cleaning device in the clean room can be reduced.
[0022]
FIG. 2 shows a main configuration of the spin cleaning section 3. The spin cleaning processing unit 3 rotates a processing chamber 4 in which the substrate W is subjected to spin cleaning processing, a chuck 5 that horizontally holds the substrate W in the processing chamber 4, and rotates the substrate W held by the chuck 5. And a motor 6. The chuck 5 and the motor 6 are connected by a rotating shaft 7 extending in the vertical direction. When the motor 6 rotationally drives the chuck 5 via the rotary shaft 7, the substrate W held by the chuck 5 also rotates.
[0023]
The substrate holding means of the present invention includes the chuck 5 and the rotating shaft 7. The substrate holding means can hold substrates W having different sizes. Specifically, the chuck 5 is configured to be able to hold substrates W having different sizes. That is, the chuck 5 has a disk-shaped table connected to the rotating shaft 7 and at least three engaging claws projecting upward from the table and engaging with the outer peripheral edge of the substrate W. The at least three engaging claws are arranged so that the substrate W can be held horizontally. By making each of the engagement claws movable in the radial direction of the substrate W, the same chuck 5 can hold substrates W of different sizes.
[0024]
It is to be noted that the substrate holding means can also hold substrates W of different sizes by selectively using a plurality of types of chucks prepared in advance without making the engagement claws movable in the radial direction of the substrate W. That is, in this case, one chuck holds only a substrate of a specific size, but the size of the substrate held by each chuck is different. Further, the chuck can be replaced with respect to the rotating shaft 7. Then, the substrates W having different sizes can be held in the processing chamber 4 by replacing the chucks as necessary.
[0025]
The processing chamber 4 includes a processing chamber main body 8 surrounding the substrate W held by the chuck 5 and a jig 9 detachable from the processing chamber main body 8. The processing chamber body 8 includes a pair of upper and lower mortar-shaped cups 10 and 11 combined so as to surround the substrate W. FIG. 3 shows a top view and a front view of each of the cups 10 and 11.
[0026]
The upper cup 10 is formed with an engaging portion 10a to which the jig 9 is detachably attached. The upper cup 10 has a tapered surface 10b inclined downward. The taper surface 10b is arranged at a position surrounding the entire end surface of the substrate W (see FIG. 2).
[0027]
On the other hand, the lower cup 11 has a rotary shaft through hole 11a (see FIG. 3B) through which the rotary shaft 7 penetrates, and an exhaust hole for discharging gas and / or a processed liquid in the processing chamber 4. 11b and the like are formed.
[0028]
The jig 9 has an opening 12 for introducing outside air from outside the processing chamber 4 to a substantially central portion of the upper surface of the substrate W in the processing chamber 4, and extends vertically downward from the opening 12 toward the upper surface of the substrate W. It has an existing tubular portion 13. The lower end of the cylindrical portion 13 is a rectification supply port 13a. The rectification supply port 13a faces substantially the center of the upper surface of the substrate W.
A flange 14 is formed around the opening 12 so as to protrude in a flange shape from the upper end of the cylindrical portion 13. The peripheral portion of the flange portion 14 is detachably engaged with the engaging portion 10a of the upper cup 10.
[0029]
Therefore, if the outer diameter of the flange portion 14 is constant, even if the size (diameter) of the opening portion 12 and the length of the cylindrical portion 13 are appropriately changed, the jig 9 whose design has been changed also has the same cup. 10 can be detachably engaged. Therefore, if a plurality of jigs 9 having different diameters of the openings 12 and / or lengths of the cylindrical portions 13 are prepared in advance, the configuration of the processing chamber 4 can be changed by appropriately changing the jigs 9 with respect to the processing chamber main body 8. The diameter of the opening portion 12 and the length of the cylindrical portion 13 which are conditions can be changed.
[0030]
Although not shown, a filter section for keeping the air in the spin cleaning device clean is provided above the opening section 12. A HEPA filter is used as a filter.
[0031]
The operation of the spin cleaning device is as follows.
First, a substrate W to be processed is set in the LD / ULD unit 2. The set substrate W is conveyed to the processing unit 3 and transferred to the chuck 5 by a transfer mechanism (not shown). After the substrate W is held by the chuck 5, a nozzle (not shown) extends toward the substrate W. Then, the substrate W is rotated at a low speed by the motor 6 while supplying the cleaning liquid to the substrate W from the nozzle (cleaning step).
As the cleaning liquid, an acidic liquid such as sulfuric acid or an alkaline liquid such as a mixed liquid of ammonia and hydrogen peroxide can be used.
[0032]
By rotating the substrate W, an airflow is generated in the processing chamber 4. The generated airflow flows out of the processing chamber 4 from an exhaust port 11b formed in the lower cup 11. As a result, the inside of the processing chamber 4 becomes negative pressure. Then, outside air is introduced from the opening 12. The introduced outside air is rectified in the process of flowing through the cylindrical portion 13, and the rectification reaches from the rectification supply port 13a to a substantially central portion of the upper surface of the substrate W. Then, it flows toward the periphery of the substrate W (see FIG. 4). In this way, rectification is formed in the entire processing chamber 4 on the upper surface of the substrate W. The rectification is formed over the entire area of the upper surface of the substrate W because the configuration conditions of the processing chamber 4 such as the diameter of the opening 12 and the length of the cylindrical portion 13 are optimized as described later.
[0033]
Incidentally, the tapered surface 10b of the upper mortar cup 10 is disposed at a position facing the end surface of the substrate W. Therefore, the processing liquid blown off by the centrifugal force of the substrate W and the mist M transported by rectification along the upper surface of the substrate W collide with the taper surface 10b, fall down, and are discharged from the exhaust port 11b. . In this way, the mist M is carried to the rectification and is smoothly exhausted, so that it is possible to prevent the processing chamber 4 from being filled with the mist. As a result, generation of a watermark can be suppressed.
[0034]
Next, after the supply of the cleaning liquid is stopped, the substrate W is rotated at a medium speed by the motor 6 while supplying the rinsing liquid to the substrate W from the nozzle (rinsing step).
Note that pure water can be used as the rinsing liquid.
[0035]
Next, after the supply of the rinsing liquid is stopped, the substrate W is dried by rotating the substrate W at a high speed by the motor 6 (rotary drying step). Since rectification is performed along the upper surface of the substrate W toward the periphery of the substrate W, the residual mist M in the processing chamber 4 does not adhere to the substrate W again.
In each of the above steps, the rotation speed of the motor 6 is appropriately controlled.
[0036]
Next, the dried substrate W is returned to the LD / ULD unit 2 again by the transporting means (not shown) and is carried out.
[0037]
Hereinafter, a substrate processing method using the above spin cleaning apparatus will be described.
(Construction condition determination step)
For each substrate W having a different size, the configuration conditions of the processing chamber 4 are determined so that rectification can be configured over substantially the entire region of the upper surface of the substrate W. As a specific method for determining the configuration conditions, after holding a substrate W of a specific size on the chuck 5, various configuration conditions are actually provisionally set, and the upper surface of the substrate W is set under the set configuration conditions. It is determined whether rectification can be configured over substantially the entire area. When the rectification can be formed over the entire area of the upper surface of the substrate W, no water mark is generated on the substrate W after the rotation drying process. Therefore, it can be confirmed that rectification can be configured over the entire area of the upper surface of the substrate W.
[0038]
By the way, the configuration conditions of the processing chamber 4 that determine the flow of the air flow in the processing chamber 4 include not only the diameter of the opening 12 and the length of the cylindrical portion 13 but also the shapes of the cups 10 and 11 and the shape of the tapered surface 10b. Innumerable such as the inclination angle. Therefore, the configuration conditions other than the diameter of the opening 12 and the length of the cylindrical portion 13 are optimized and fixed in advance. Then, while changing only the diameter of the opening 12 and / or the length of the cylindrical portion 13, a configuration condition that allows rectification to be formed on the upper surface of the substrate W of each size is obtained. Thus, by changing only the diameter of the opening portion 12 and / or the length of the cylindrical portion 13, rectification can be configured over substantially the entire region of the upper surface of the substrate W of different sizes.
[0039]
Note that the diameter of the opening 12 and / or the length of the cylindrical portion 13 which are constituent conditions are determined by the number of rotations of the substrate, the flow rate of the outside air introduced into the processing chamber 4, and the like, even for substrates of the same size. A plurality may be determined accordingly.
[0040]
The absolute diameter of the opening 12 is IN when the amount of outside air introduced from the opening 12 with the rotation of the substrate W is IN and the amount of processed gas exhausted from the exhaust port 11b is OUT. It is preferable to determine so as to be <OUT. Note that when IN ≧ OUT, smooth exhaust is not performed, so that the processing chamber 4 is filled with mist and a watermark is easily generated.
[0041]
The ratio of the size of the opening 12 to the size of the processing space of the substrate W (opening ratio) is an important parameter that determines the flow of the airflow in the processing chamber. The relationship between the two will be described below.
[0042]
As the aperture ratio of the opening 12 increases, the flow velocity of the airflow from the central portion of the upper surface of the substrate W toward the periphery decreases. If the aperture ratio is too large, a turbulent flow area is formed on the peripheral portion of the upper surface of the substrate W as shown in FIG.
The mechanism is as follows. That is, when the flow velocity of the airflow from the central portion of the upper surface of the substrate W toward the peripheral edge becomes too small, the processing liquid M which is shaken off by the rotation of the substrate W and collides with the tape surface 10b is opposed to the airflow. Re-adhere to the periphery of Due to such a rebound of the processing liquid, a turbulent flow region including mist is formed at a peripheral portion of the upper surface of the substrate W.
[0043]
On the other hand, as the aperture ratio of the opening 12 is smaller, the flow velocity of the airflow from the central portion of the upper surface of the substrate W to the periphery becomes larger. In this case, the drying time of the substrate W can be reduced. However, simply reducing the aperture ratio of the opening 12 may result in the formation of a turbulent flow region in the peripheral portion of the upper surface of the substrate W as shown in FIG.
The mechanism is as follows. That is, if the flow velocity of the airflow from the central portion of the upper surface of the substrate W toward the peripheral edge becomes too large, the rebound of the airflow colliding with the taper surface 10b also becomes large. Then, the airflow colliding with the taper surface 10b returns to the peripheral portion of the upper surface of the substrate W again. As a result, a turbulent flow region is formed in the peripheral portion of the upper surface of the substrate W.
[0044]
As described above, when the aperture ratio is too large, the airflow introduced into the processing chamber 4 stalls at the peripheral portion of the substrate W, and a turbulent flow region is generated at the peripheral portion. On the other hand, if the aperture ratio is too small, the rebound of the airflow that collides with the taper surface increases, and a turbulent flow region is generated at the peripheral portion of the substrate W. Therefore, by setting an optimal aperture ratio in consideration of a balance between the two, rectification is formed over the entire region of the upper surface of the substrate W as shown in FIG.
[0045]
[Jig preparation process]
Next, a plurality of jigs that satisfy the respective configuration conditions (the diameter of the opening and the length of the cylindrical portion) determined in the configuration condition determination step are prepared in advance in association with the size of the substrate W.
[0046]
(Configuration condition setting process)
Thereafter, a spin cleaning process is performed. Prior to the process, a configuration condition corresponding to the size of the substrate W to be processed is set prior to the process. That is, the diameter of the opening 12 and / or the length of the cylindrical portion 13 are changed according to the size of the substrate. Since a plurality of jigs 9 have been prepared in the jig preparation step in advance, a jig 9 corresponding to the size of the substrate W to be processed is selected from the plurality of jigs 9 and the selected jig 9 is placed in a processing chamber. The diameter of the opening 12 and / or the length of the cylindrical portion 13 can be easily changed only by replacing the main body 8.
[0047]
(Substrate rotation processing step)
Next, the substrate W is rotated under the set configuration conditions. The operation of the spin cleaning device in the substrate rotation process is as described above.
[0048]
According to the embodiment, the following effects can be obtained.
(1) To make it possible to hold substrates W of different sizes by the chuck 5 and, when the substrates of different sizes are held by the chuck 5, form rectification over substantially the entire region of the upper surface of the substrate of different sizes. Since the flow of the airflow in the processing chamber 4 can be controlled, spin cleaning can be performed on substrates of different sizes without generating a watermark using the same apparatus.
[0049]
(2) The air flow in the processing chamber 4 can be controlled by changing only the diameter of the opening 12 and / or the length of the cylindrical portion 13, and the diameter of the opening 12 and / or the cylindrical portion 13 can be controlled. Since the length is changed by replacing the jig 9, the generation of a watermark can be easily prevented.
[0050]
(3) Since the replacement of the jig 9 can be performed manually, an inexpensive spin cleaning apparatus with a simple configuration can be realized.
[0051]
(4) Since the flow of the airflow in the processing chamber 4 can be controlled while the configuration conditions other than the diameter of the opening 12 and the length of the cylindrical portion 13 are fixed, the existing apparatus is minimally modified. The spin cleaning apparatus of the present invention can be easily and inexpensively realized only by the above.
[0052]
(5) Since the jig 9 has the cylindrical portion 13, the jig 9 can be supplied while maintaining the rectification flowing down in the cylindrical portion 13 to the vicinity of the substrate W. Thereby, the turbulent flow region can be easily eliminated from above the substrate. Further, the distance between the upper surface of the substrate W and the rectification supply port 13a can be easily adjusted only by appropriately changing the design of the length of the cylindrical portion 13. In addition, since the adjustment of the distance is performed by replacing the jig 9, a much simpler configuration is required than when an elevating mechanism for elevating the substrate W and the rectifying supply port 13a is provided.
[0053]
In the above-described filter unit, the wind speed of the airflow taken into the processing chamber 4 may be controlled. For example, when a HEPA filter is used, the reliability (reproducibility) can be improved by keeping the wind speed constant.
[0054]
Also, in the process of the spin cleaning process, an inert gas such as nitrogen may be forcibly supplied from the opening 12.
[0055]
Also, a jig accommodating portion such as a magazine for accommodating a plurality of jigs prepared in advance in the jig preparing step, and a tool exchanging means for transferring a jig between the jig accommodating portion and the engaging portion 10a are provided. It is also possible to realize a spin cleaning apparatus in which the jig is exchanged.
[0056]
[Second embodiment]
FIG. 7 shows a main configuration of a spin cleaning apparatus according to the second embodiment. The spin cleaning device includes an enlargement / reduction mechanism 20, a storage unit 21, an input unit 22, and a control unit 23.
[0057]
The expansion and contraction mechanism 20 is a mechanism for expanding and reducing the opening area of the opening formed in the processing chamber 4. The mechanism is not particularly limited, and a known mechanism may be used.
The storage unit 21 includes a table 21a in which size information indicating the size of the substrate is associated with diameter information for specifying the diameter of the opening such that rectification can be configured over substantially the entire area of the upper surface of the substrate having the size. Is stored.
The input unit 22 has an input button or the like for inputting size information of a substrate to be processed.
The control unit 23 acquires the diameter information corresponding to the size information input by the input unit 22 from the table 21a, and enlarges or reduces the diameter of the opening in the processing chamber 4 to the diameter specified by the acquired diameter information. Control the mechanism.
[0058]
With the above configuration, the diameter of the opening 12 can be automatically and quickly changed without depending on the jig replacement.
[0059]
【The invention's effect】
According to the present invention, substrates of different sizes can be appropriately rotated while using the same apparatus.
[Brief description of the drawings]
FIG. 1 is a diagram showing an overall configuration of a substrate processing apparatus according to an embodiment.
FIG. 2 is a diagram showing a configuration of a main part of the substrate processing apparatus according to the embodiment.
FIG. 3 is a top view and a front view of each cup constituting a processing chamber.
FIG. 4 is a diagram illustrating a flow of an airflow in a processing chamber in the embodiment.
FIG. 5 is a diagram for explaining an airflow in a processing chamber in a comparative example.
FIG. 6 is a diagram for explaining the flow of airflow in a processing chamber in another comparative example.
FIG. 7 is a diagram showing a main part configuration of a substrate processing apparatus according to another embodiment.
[Explanation of symbols]
4 processing chamber, 5 chuck, 6 motor, 7 rotating shaft, 8 processing chamber body, 9 jig, 12 opening, 13 cylindrical part.

Claims (5)

A processing chamber in which substrate rotation processing is performed;
Substrate holding means for holding the substrate horizontally in the processing chamber;
Rotating means for rotating the substrate held by the substrate holding means,
When rotating the substrate by the rotating means, a substrate processing apparatus configured to rectify at least over substantially the entire area of the upper surface of the substrate in the processing chamber,
The substrate holding means can hold the different size of the substrate,
When a substrate having a different size is held by the substrate holding means, rectification is also formed over substantially the entire area of the upper surface of the substrate having the different size, so that the flow of air in the processing chamber can be controlled. apparatus. The processing chamber has an opening for introducing outside air from outside the processing chamber to a substantially central portion of the upper surface of the substrate,
2. The substrate processing apparatus according to claim 1, wherein a flow of an airflow in the processing chamber can be controlled at least by a size of the opening. A substrate processing method using the substrate processing apparatus according to claim 2,
Of the processing conditions of the processing chamber including the size of the opening that can be configured to be rectified over substantially the entire area of the substrate upper surface having a predetermined size for each size of the substrate, A substrate processing method comprising: setting a configuration condition corresponding to a size of a substrate; and performing a rotation process on the substrate under the set configuration condition. 4. The substrate processing method according to claim 3, wherein the rotation processing step is a drying processing step after cleaning the substrate. A method for manufacturing a photomask, comprising a step of processing a substrate using the substrate processing method according to claim 3.

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