JP2003510796A5 - - Google Patents

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Publication number
JP2003510796A5
JP2003510796A5 JP2000569438A JP2000569438A JP2003510796A5 JP 2003510796 A5 JP2003510796 A5 JP 2003510796A5 JP 2000569438 A JP2000569438 A JP 2000569438A JP 2000569438 A JP2000569438 A JP 2000569438A JP 2003510796 A5 JP2003510796 A5 JP 2003510796A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000569438A
Other versions
JP2003510796A (ja
Filing date
Publication date
Priority claimed from US09/145,818 external-priority patent/US6506648B1/en
Application filed filed Critical
Publication of JP2003510796A publication Critical patent/JP2003510796A/ja
Publication of JP2003510796A5 publication Critical patent/JP2003510796A5/ja
Pending legal-status Critical Current

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JP2000569438A 1998-09-02 1999-08-17 ホットエレクトロン注入が減少された大電力ｒｆ電界効果トランジスタを製造する方法及びそれから得られる構造 Pending JP2003510796A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/145,818 US6506648B1 (en) 1998-09-02 1998-09-02 Method of fabricating a high power RF field effect transistor with reduced hot electron injection and resulting structure
US09/145,818 1998-09-02
PCT/US1999/018780 WO2000014791A1 (en) 1998-09-02 1999-08-17 Method of fabricating a high power rf field effect transistor with reduced hot electron injection and resulting structure

Publications (2)

Publication Number Publication Date
JP2003510796A JP2003510796A (ja) 2003-03-18
JP2003510796A5 true JP2003510796A5 (ja) 2006-10-05

Family

ID=22514691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000569438A Pending JP2003510796A (ja) 1998-09-02 1999-08-17 ホットエレクトロン注入が減少された大電力ｒｆ電界効果トランジスタを製造する方法及びそれから得られる構造

Country Status (5)

Country Link
US (1) US6506648B1 (ja)
EP (1) EP1142012A4 (ja)
JP (1) JP2003510796A (ja)
KR (1) KR100633947B1 (ja)
WO (1) WO2000014791A1 (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6468878B1 (en) * 2001-02-27 2002-10-22 Koninklijke Philips Electronics N.V. SOI LDMOS structure with improved switching characteristics
EP1296378A1 (en) * 2001-09-21 2003-03-26 STMicroelectronics S.r.l. MOS semiconductor device and manufacturing process thereof
US6710424B2 (en) 2001-09-21 2004-03-23 Airip RF chipset architecture
BR0305034A (pt) 2002-06-06 2004-07-20 Nippon Catalytic Chem Ind Composição para absorção de água, processo para produção da mesma, absorvente e produto absorvente
US6727127B1 (en) * 2002-11-21 2004-04-27 Cree, Inc. Laterally diffused MOS transistor (LDMOS) and method of making same
SE0303106D0 (sv) * 2003-11-21 2003-11-21 Infineon Technologies Ag Ldmos transistor device, integrated circuit, and fabrication method thereof
US7307314B2 (en) * 2004-06-16 2007-12-11 Cree Microwave Llc LDMOS transistor with improved gate shield
CN100583453C (zh) 2005-07-13 2010-01-20 Nxp股份有限公司 Ldmos晶体管
US7808102B2 (en) * 2006-07-28 2010-10-05 Alpha & Omega Semiconductor, Ltd. Multi-die DC-DC boost power converter with efficient packaging
US7554154B2 (en) * 2006-07-28 2009-06-30 Alpha Omega Semiconductor, Ltd. Bottom source LDMOSFET structure and method
US7825508B2 (en) * 2006-07-28 2010-11-02 Alpha Omega Semiconductor, Inc. Multi-die DC-DC buck power converter with efficient packaging
CN105789054B (zh) * 2016-03-30 2019-02-05 上海华虹宏力半导体制造有限公司 Rfldmos制备方法及结构

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011789A (ja) * 1973-06-04 1975-02-06
JPS52117081A (en) * 1976-03-29 1977-10-01 Hitachi Ltd Preparation of mis semiconductor device
JPS62274767A (ja) * 1986-05-23 1987-11-28 Fujitsu Ltd 高耐圧半導体装置及びその製造方法
US5155563A (en) * 1991-03-18 1992-10-13 Motorola, Inc. Semiconductor device having low source inductance
GB9106108D0 (en) * 1991-03-22 1991-05-08 Philips Electronic Associated A lateral insulated gate field effect semiconductor device
US5306652A (en) * 1991-12-30 1994-04-26 Texas Instruments Incorporated Lateral double diffused insulated gate field effect transistor fabrication process
US5286995A (en) * 1992-07-14 1994-02-15 Texas Instruments Incorporated Isolated resurf LDMOS devices for multiple outputs on one die
US5539238A (en) * 1992-09-02 1996-07-23 Texas Instruments Incorporated Area efficient high voltage Mosfets with vertical resurf drift regions
JPH0897410A (ja) * 1994-07-01 1996-04-12 Texas Instr Inc <Ti> 自己整合した横型ｄｍｏｓトランジスタの製造法
JPH08236757A (ja) * 1994-12-12 1996-09-13 Texas Instr Inc <Ti> Ｌｄｍｏｓ装置
US5578860A (en) * 1995-05-01 1996-11-26 Motorola, Inc. Monolithic high frequency integrated circuit structure having a grounded source configuration
US5841166A (en) * 1996-09-10 1998-11-24 Spectrian, Inc. Lateral DMOS transistor for RF/microwave applications
US5869875A (en) * 1997-06-10 1999-02-09 Spectrian Lateral diffused MOS transistor with trench source contact
US5912490A (en) * 1997-08-04 1999-06-15 Spectrian MOSFET having buried shield plate for reduced gate/drain capacitance
US5918137A (en) * 1998-04-27 1999-06-29 Spectrian, Inc. MOS transistor with shield coplanar with gate electrode

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