JP2003509839A5 - - Google Patents

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Publication number
JP2003509839A5
JP2003509839A5 JP2001522570A JP2001522570A JP2003509839A5 JP 2003509839 A5 JP2003509839 A5 JP 2003509839A5 JP 2001522570 A JP2001522570 A JP 2001522570A JP 2001522570 A JP2001522570 A JP 2001522570A JP 2003509839 A5 JP2003509839 A5 JP 2003509839A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001522570A
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JP2003509839A (ja
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Publication date
Priority claimed from US09/491,845 external-priority patent/US6582618B1/en
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Publication of JP2003509839A publication Critical patent/JP2003509839A/ja
Publication of JP2003509839A5 publication Critical patent/JP2003509839A5/ja
Pending legal-status Critical Current

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JP2001522570A 1999-09-08 2000-06-13 発光スペクトルの主成分分析を用いてエッチ終点を決定する方法 Pending JP2003509839A (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US15289799P 1999-09-08 1999-09-08
US60/152,879 1999-09-08
US16386899P 1999-11-05 1999-11-05
US60/163,868 1999-11-05
US09/491,845 US6582618B1 (en) 1999-09-08 2000-01-26 Method of determining etch endpoint using principal components analysis of optical emission spectra
US09/491,845 2000-01-26
PCT/US2000/016100 WO2001018845A1 (en) 1999-09-08 2000-06-13 Method of determining etch endpoint using principal components analysis of optical emission spectra

Publications (2)

Publication Number Publication Date
JP2003509839A JP2003509839A (ja) 2003-03-11
JP2003509839A5 true JP2003509839A5 (ja) 2007-06-14

Family

ID=27387343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001522570A Pending JP2003509839A (ja) 1999-09-08 2000-06-13 発光スペクトルの主成分分析を用いてエッチ終点を決定する方法

Country Status (5)

Country Link
US (1) US6582618B1 (ja)
EP (1) EP1210724B1 (ja)
JP (1) JP2003509839A (ja)
DE (1) DE60041408D1 (ja)
WO (1) WO2001018845A1 (ja)

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JP2005531927A (ja) 2002-06-28 2005-10-20 東京エレクトロン株式会社 材料処理ツールおよびセンサデータを使用して処理性能を予測するための方法およびシステム
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US6915177B2 (en) * 2002-09-30 2005-07-05 Advanced Micro Devices, Inc. Comprehensive integrated lithographic process control system based on product design and yield feedback system
US6927076B2 (en) * 2002-10-05 2005-08-09 Taiwan Semiconductor Manufacturing Co., Ltd Method for recovering a plasma process
TWI240326B (en) * 2002-10-31 2005-09-21 Tokyo Electron Ltd Method and apparatus for determining an etch property using an endpoint signal
CN100401491C (zh) * 2003-05-09 2008-07-09 优利讯美国有限公司 时分复用处理中的包络跟随器终点检测
US20060006139A1 (en) * 2003-05-09 2006-01-12 David Johnson Selection of wavelengths for end point in a time division multiplexed process
US6952657B2 (en) * 2003-09-10 2005-10-04 Peak Sensor Systems Llc Industrial process fault detection using principal component analysis
US6980873B2 (en) 2004-04-23 2005-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for real-time fault detection, classification, and correction in a semiconductor manufacturing environment
US7437404B2 (en) * 2004-05-20 2008-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for improving equipment communication in semiconductor manufacturing equipment
US20060000799A1 (en) * 2004-06-30 2006-01-05 Hyun-Ho Doh Methods and apparatus for determining endpoint in a plasma processing system
US8676538B2 (en) * 2004-11-02 2014-03-18 Advanced Micro Devices, Inc. Adjusting weighting of a parameter relating to fault detection based on a detected fault
US7695984B1 (en) 2005-04-20 2010-04-13 Pivotal Systems Corporation Use of modeled parameters for real-time semiconductor process metrology applied to semiconductor processes
JP4643392B2 (ja) * 2005-08-24 2011-03-02 東京エレクトロン株式会社 プラズマ処理装置の運転状態判定方法、運転状態判定装置、プログラム及び記憶媒体
US7879732B2 (en) * 2007-12-18 2011-02-01 Chartered Semiconductor Manufacturing Ltd. Thin film etching method and semiconductor device fabrication using same
US9997325B2 (en) 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems
US20110168671A1 (en) * 2010-01-08 2011-07-14 International Business Machines Corporation Process control using signal representative of a throttle valve position
DE102010028461B4 (de) * 2010-04-30 2014-07-10 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Einebnung eines Materialsystems in einem Halbleiterbauelement unter Anwendung eines nicht-selektiven in-situ zubereiteten Schleifmittels
TWI447828B (zh) * 2011-06-22 2014-08-01 Inotera Memories Inc 製程原始資料的壓縮方法及壓縮系統
TWI518525B (zh) * 2012-10-17 2016-01-21 東京威力科創股份有限公司 使用多變量分析之電漿蝕刻程序的終點偵測方法
US10692705B2 (en) 2015-11-16 2020-06-23 Tokyo Electron Limited Advanced optical sensor and method for detecting an optical event in a light emission signal in a plasma chamber
US10522429B2 (en) 2015-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device
JP6974668B2 (ja) 2016-03-31 2021-12-01 東京エレクトロン株式会社 ウェハレスドライクリーニング発光分光法を使用するドライエッチングプロセス特徴の制御
US10453653B2 (en) 2016-09-02 2019-10-22 Tokyo Electron Limited Endpoint detection algorithm for atomic layer etching (ALE)
US10436717B2 (en) 2016-11-18 2019-10-08 Tokyo Electron Limited Compositional optical emission spectroscopy for detection of particle induced arcs in a fabrication process
US10262910B2 (en) * 2016-12-23 2019-04-16 Lam Research Corporation Method of feature exaction from time-series of spectra to control endpoint of process
KR20190121864A (ko) 2017-03-17 2019-10-28 도쿄엘렉트론가부시키가이샤 에칭 메트릭 향상을 위한 표면 개질 제어
US11328964B2 (en) 2018-12-13 2022-05-10 Applied Materials, Inc. Prescriptive analytics in highly collinear response space
JP2020181959A (ja) 2019-04-26 2020-11-05 東京エレクトロン株式会社 学習方法、管理装置および管理プログラム
JP2022533246A (ja) 2019-05-23 2022-07-21 東京エレクトロン株式会社 ハイパースペクトルイメージングを使用する半導体プロセスの光学的診断
US10910201B1 (en) * 2019-08-22 2021-02-02 Tokyo Electron Limited Synthetic wavelengths for endpoint detection in plasma etching
TW202204876A (zh) * 2020-07-16 2022-02-01 日商東京威力科創股份有限公司 資料處理裝置、資料處理系統、資料處理方法及資料處理程式
US11830779B2 (en) 2020-08-12 2023-11-28 Applied Materials, Inc. In-situ etch material selectivity detection system
US12072267B2 (en) * 2020-08-31 2024-08-27 Applied Materials, Inc. Method and hardware for post maintenance vacuum recovery system

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US5121337A (en) 1990-10-15 1992-06-09 Exxon Research And Engineering Company Method for correcting spectral data for data due to the spectral measurement process itself and estimating unknown property and/or composition data of a sample using such method
US5288367A (en) 1993-02-01 1994-02-22 International Business Machines Corporation End-point detection
US5479340A (en) 1993-09-20 1995-12-26 Sematech, Inc. Real time control of plasma etch utilizing multivariate statistical analysis
US5658423A (en) 1995-11-27 1997-08-19 International Business Machines Corporation Monitoring and controlling plasma processes via optical emission using principal component analysis
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US6153115A (en) * 1997-10-23 2000-11-28 Massachusetts Institute Of Technology Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra
JP4051470B2 (ja) * 1999-05-18 2008-02-27 東京エレクトロン株式会社 終点検出方法
US6564114B1 (en) * 1999-09-08 2003-05-13 Advanced Micro Devices, Inc. Determining endpoint in etching processes using real-time principal components analysis of optical emission spectra
US6368879B1 (en) * 1999-09-22 2002-04-09 Advanced Micro Devices, Inc. Process control with control signal derived from metrology of a repetitive critical dimension feature of a test structure on the work piece

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