JP2003504802A - 電界電子放出材料を製造する方法および前記材料から成る電界電子エミッタ - Google Patents
電界電子放出材料を製造する方法および前記材料から成る電界電子エミッタInfo
- Publication number
- JP2003504802A JP2003504802A JP2001508471A JP2001508471A JP2003504802A JP 2003504802 A JP2003504802 A JP 2003504802A JP 2001508471 A JP2001508471 A JP 2001508471A JP 2001508471 A JP2001508471 A JP 2001508471A JP 2003504802 A JP2003504802 A JP 2003504802A
- Authority
- JP
- Japan
- Prior art keywords
- field electron
- electron emission
- mixture
- silica
- emission device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 152
- 239000002245 particle Substances 0.000 claims abstract description 63
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 57
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 54
- 239000010439 graphite Substances 0.000 claims abstract description 50
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 50
- 239000002243 precursor Substances 0.000 claims abstract description 44
- 230000002950 deficient Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 98
- 239000000203 mixture Substances 0.000 claims description 56
- 230000008569 process Effects 0.000 claims description 42
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 18
- 230000005684 electric field Effects 0.000 claims description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 13
- 229920000642 polymer Polymers 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 8
- 239000006185 dispersion Substances 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 150000002736 metal compounds Chemical class 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 238000003491 array Methods 0.000 claims description 4
- 238000005401 electroluminescence Methods 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 150000002902 organometallic compounds Chemical class 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 238000009987 spinning Methods 0.000 claims description 4
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 150000001768 cations Chemical class 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000011572 manganese Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 239000008119 colloidal silica Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 238000005286 illumination Methods 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 230000037452 priming Effects 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims 1
- 239000000976 ink Substances 0.000 description 20
- 238000000576 coating method Methods 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 15
- 239000010408 film Substances 0.000 description 15
- 239000012212 insulator Substances 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 229910003460 diamond Inorganic materials 0.000 description 7
- 239000010432 diamond Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000012258 stirred mixture Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910033181 TiB2 Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- LHENQXAPVKABON-UHFFFAOYSA-N 1-methoxypropan-1-ol Chemical compound CCC(O)OC LHENQXAPVKABON-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000013557 residual solvent Substances 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910000608 Fe(NO3)3.9H2O Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical group B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 229910021386 carbon form Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000003902 lesion Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002696 manganese Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000012703 sol-gel precursor Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3048—Distributed particle emitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/02—Details, e.g. electrode, gas filling, shape of vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Cold Cathode And The Manufacture (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9915633.3A GB9915633D0 (en) | 1999-07-05 | 1999-07-05 | Field electron emission materials and devices |
| GB9915633.3 | 1999-07-05 | ||
| PCT/GB2000/002537 WO2001003154A1 (en) | 1999-07-05 | 2000-06-30 | Method of creating a field electron emission material and field electron emitter comprising said material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003504802A true JP2003504802A (ja) | 2003-02-04 |
| JP2003504802A5 JP2003504802A5 (enExample) | 2007-08-16 |
Family
ID=10856606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001508471A Pending JP2003504802A (ja) | 1999-07-05 | 2000-06-30 | 電界電子放出材料を製造する方法および前記材料から成る電界電子エミッタ |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6969536B1 (enExample) |
| EP (1) | EP1198818A1 (enExample) |
| JP (1) | JP2003504802A (enExample) |
| KR (1) | KR20020015707A (enExample) |
| CN (1) | CN1199218C (enExample) |
| AU (1) | AU5694400A (enExample) |
| CA (1) | CA2378454A1 (enExample) |
| GB (2) | GB9915633D0 (enExample) |
| WO (1) | WO2001003154A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0015928D0 (en) * | 2000-06-30 | 2000-08-23 | Printable Field Emitters Limit | Field emitters |
| KR20020049630A (ko) * | 2000-12-19 | 2002-06-26 | 임지순 | 전계방출 에미터 |
| GB0106358D0 (en) * | 2001-03-13 | 2001-05-02 | Printable Field Emitters Ltd | Field emission materials and devices |
| US6723299B1 (en) | 2001-05-17 | 2004-04-20 | Zyvex Corporation | System and method for manipulating nanotubes |
| JP3839713B2 (ja) * | 2001-12-12 | 2006-11-01 | 株式会社ノリタケカンパニーリミテド | 平面ディスプレイの製造方法 |
| JP2003303540A (ja) * | 2002-04-11 | 2003-10-24 | Sony Corp | 電界電子放出膜、電界電子放出電極および電界電子放出表示装置 |
| US6905667B1 (en) | 2002-05-02 | 2005-06-14 | Zyvex Corporation | Polymer and method for using the polymer for noncovalently functionalizing nanotubes |
| US20040034177A1 (en) | 2002-05-02 | 2004-02-19 | Jian Chen | Polymer and method for using the polymer for solubilizing nanotubes |
| KR20040011314A (ko) * | 2002-07-30 | 2004-02-05 | 김영철 | 탄소나노튜브 분말을 사용한 음이온 발생 장치 |
| TWI287940B (en) * | 2003-04-01 | 2007-10-01 | Cabot Microelectronics Corp | Electron source and method for making same |
| KR100827861B1 (ko) | 2003-05-22 | 2008-05-07 | 지벡스 퍼포먼스 머티리얼즈, 엘엘씨 | 나노복합물 및 이의 제조 방법 |
| CN1300818C (zh) * | 2003-08-06 | 2007-02-14 | 北京大学 | 一种场发射针尖及其制备方法与应用 |
| CN1998087B (zh) * | 2004-03-12 | 2014-12-31 | 独立行政法人科学技术振兴机构 | 非晶形氧化物和薄膜晶体管 |
| US7834530B2 (en) * | 2004-05-27 | 2010-11-16 | California Institute Of Technology | Carbon nanotube high-current-density field emitters |
| US7296576B2 (en) | 2004-08-18 | 2007-11-20 | Zyvex Performance Materials, Llc | Polymers for enhanced solubility of nanomaterials, compositions and methods therefor |
| JP5072220B2 (ja) * | 2005-12-06 | 2012-11-14 | キヤノン株式会社 | 薄膜の製造方法及び電子放出素子の製造方法 |
| WO2009131754A1 (en) * | 2008-03-05 | 2009-10-29 | Georgia Tech Research Corporation | Cold cathodes and ion thrusters and methods of making and using same |
| ATE535937T1 (de) * | 2009-05-18 | 2011-12-15 | Soitec Silicon On Insulator | Herstellungsverfahren für ein hybrid- halbleitersubstrat |
| CN101714496B (zh) * | 2009-11-10 | 2014-04-23 | 西安交通大学 | 利用多层薄膜型电子源的平面气体激发光源 |
| US9058954B2 (en) | 2012-02-20 | 2015-06-16 | Georgia Tech Research Corporation | Carbon nanotube field emission devices and methods of making same |
| KR101340356B1 (ko) * | 2012-03-20 | 2013-12-10 | 한국과학기술원 | 탄소나노튜브/금속 나노복합소재 및 이의 제조방법 |
| CN110189967B (zh) * | 2019-07-02 | 2020-05-26 | 电子科技大学 | 一种带有限流阻变层的场发射阴极结构及其制备方法 |
| EP3933881A1 (en) | 2020-06-30 | 2022-01-05 | VEC Imaging GmbH & Co. KG | X-ray source with multiple grids |
| US12230468B2 (en) | 2022-06-30 | 2025-02-18 | Varex Imaging Corporation | X-ray system with field emitters and arc protection |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997006549A1 (en) * | 1995-08-04 | 1997-02-20 | Printable Field Emmitters Limited | Field electron emission materials and devices |
| WO1999028939A1 (en) * | 1997-12-04 | 1999-06-10 | Printable Field Emitters Limited | Field electron emission materials and devices |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| US5608283A (en) * | 1994-06-29 | 1997-03-04 | Candescent Technologies Corporation | Electron-emitting devices utilizing electron-emissive particles which typically contain carbon |
| US5623180A (en) * | 1994-10-31 | 1997-04-22 | Lucent Technologies Inc. | Electron field emitters comprising particles cooled with low voltage emitting material |
| US5709577A (en) * | 1994-12-22 | 1998-01-20 | Lucent Technologies Inc. | Method of making field emission devices employing ultra-fine diamond particle emitters |
| US5667724A (en) * | 1996-05-13 | 1997-09-16 | Motorola | Phosphor and method of making same |
| JP3568345B2 (ja) * | 1997-01-16 | 2004-09-22 | 株式会社リコー | 電子発生装置 |
| WO1999031702A1 (en) * | 1997-12-15 | 1999-06-24 | E.I. Du Pont De Nemours And Company | Ion bombarded graphite electron emitters |
| US6250984B1 (en) * | 1999-01-25 | 2001-06-26 | Agere Systems Guardian Corp. | Article comprising enhanced nanotube emitter structure and process for fabricating article |
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2000
- 2000-06-30 GB GB0015926A patent/GB2353631B/en not_active Expired - Fee Related
- 2000-06-30 CN CNB008099960A patent/CN1199218C/zh not_active Expired - Fee Related
- 2000-06-30 AU AU56944/00A patent/AU5694400A/en not_active Abandoned
- 2000-06-30 WO PCT/GB2000/002537 patent/WO2001003154A1/en not_active Ceased
- 2000-06-30 KR KR1020017016755A patent/KR20020015707A/ko not_active Abandoned
- 2000-06-30 US US10/030,570 patent/US6969536B1/en not_active Expired - Fee Related
- 2000-06-30 EP EP00942240A patent/EP1198818A1/en not_active Withdrawn
- 2000-06-30 JP JP2001508471A patent/JP2003504802A/ja active Pending
- 2000-06-30 CA CA002378454A patent/CA2378454A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997006549A1 (en) * | 1995-08-04 | 1997-02-20 | Printable Field Emmitters Limited | Field electron emission materials and devices |
| WO1999028939A1 (en) * | 1997-12-04 | 1999-06-10 | Printable Field Emitters Limited | Field electron emission materials and devices |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2353631B (en) | 2001-07-11 |
| CN1360731A (zh) | 2002-07-24 |
| US6969536B1 (en) | 2005-11-29 |
| GB9915633D0 (en) | 1999-09-01 |
| WO2001003154A1 (en) | 2001-01-11 |
| CN1199218C (zh) | 2005-04-27 |
| CA2378454A1 (en) | 2001-01-11 |
| GB2353631A (en) | 2001-02-28 |
| GB0015926D0 (en) | 2000-08-23 |
| AU5694400A (en) | 2001-01-22 |
| KR20020015707A (ko) | 2002-02-28 |
| EP1198818A1 (en) | 2002-04-24 |
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