CN1199218C - 形成场电子放射材料和场电子放射设备的方法 - Google Patents

形成场电子放射材料和场电子放射设备的方法 Download PDF

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Publication number
CN1199218C
CN1199218C CNB008099960A CN00809996A CN1199218C CN 1199218 C CN1199218 C CN 1199218C CN B008099960 A CNB008099960 A CN B008099960A CN 00809996 A CN00809996 A CN 00809996A CN 1199218 C CN1199218 C CN 1199218C
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CN
China
Prior art keywords
field electron
silica
mixture
precursor
electron emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB008099960A
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English (en)
Chinese (zh)
Other versions
CN1360731A (zh
Inventor
R·A·塔克
A·博尔登
H·比肖普
C·胡德
W·李
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Printable Field Emitters Ltd
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Printable Field Emitters Ltd
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Publication date
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Publication of CN1360731A publication Critical patent/CN1360731A/zh
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Publication of CN1199218C publication Critical patent/CN1199218C/zh
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Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3048—Distributed particle emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J63/00—Cathode-ray or electron-stream lamps
    • H01J63/02—Details, e.g. electrode, gas filling, shape of vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
CNB008099960A 1999-07-05 2000-06-30 形成场电子放射材料和场电子放射设备的方法 Expired - Fee Related CN1199218C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9915633.3A GB9915633D0 (en) 1999-07-05 1999-07-05 Field electron emission materials and devices
GB9915633.3 1999-07-05

Publications (2)

Publication Number Publication Date
CN1360731A CN1360731A (zh) 2002-07-24
CN1199218C true CN1199218C (zh) 2005-04-27

Family

ID=10856606

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008099960A Expired - Fee Related CN1199218C (zh) 1999-07-05 2000-06-30 形成场电子放射材料和场电子放射设备的方法

Country Status (9)

Country Link
US (1) US6969536B1 (enExample)
EP (1) EP1198818A1 (enExample)
JP (1) JP2003504802A (enExample)
KR (1) KR20020015707A (enExample)
CN (1) CN1199218C (enExample)
AU (1) AU5694400A (enExample)
CA (1) CA2378454A1 (enExample)
GB (2) GB9915633D0 (enExample)
WO (1) WO2001003154A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110189967A (zh) * 2019-07-02 2019-08-30 电子科技大学 一种带有限流阻变层的场发射阴极结构及其制备方法

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GB0015928D0 (en) * 2000-06-30 2000-08-23 Printable Field Emitters Limit Field emitters
KR20020049630A (ko) * 2000-12-19 2002-06-26 임지순 전계방출 에미터
GB0106358D0 (en) * 2001-03-13 2001-05-02 Printable Field Emitters Ltd Field emission materials and devices
US6723299B1 (en) 2001-05-17 2004-04-20 Zyvex Corporation System and method for manipulating nanotubes
JP3839713B2 (ja) * 2001-12-12 2006-11-01 株式会社ノリタケカンパニーリミテド 平面ディスプレイの製造方法
JP2003303540A (ja) * 2002-04-11 2003-10-24 Sony Corp 電界電子放出膜、電界電子放出電極および電界電子放出表示装置
US6905667B1 (en) 2002-05-02 2005-06-14 Zyvex Corporation Polymer and method for using the polymer for noncovalently functionalizing nanotubes
US20040034177A1 (en) 2002-05-02 2004-02-19 Jian Chen Polymer and method for using the polymer for solubilizing nanotubes
KR20040011314A (ko) * 2002-07-30 2004-02-05 김영철 탄소나노튜브 분말을 사용한 음이온 발생 장치
TWI287940B (en) * 2003-04-01 2007-10-01 Cabot Microelectronics Corp Electron source and method for making same
KR100827861B1 (ko) 2003-05-22 2008-05-07 지벡스 퍼포먼스 머티리얼즈, 엘엘씨 나노복합물 및 이의 제조 방법
CN1300818C (zh) * 2003-08-06 2007-02-14 北京大学 一种场发射针尖及其制备方法与应用
CN1998087B (zh) * 2004-03-12 2014-12-31 独立行政法人科学技术振兴机构 非晶形氧化物和薄膜晶体管
US7834530B2 (en) * 2004-05-27 2010-11-16 California Institute Of Technology Carbon nanotube high-current-density field emitters
US7296576B2 (en) 2004-08-18 2007-11-20 Zyvex Performance Materials, Llc Polymers for enhanced solubility of nanomaterials, compositions and methods therefor
JP5072220B2 (ja) * 2005-12-06 2012-11-14 キヤノン株式会社 薄膜の製造方法及び電子放出素子の製造方法
WO2009131754A1 (en) * 2008-03-05 2009-10-29 Georgia Tech Research Corporation Cold cathodes and ion thrusters and methods of making and using same
ATE535937T1 (de) * 2009-05-18 2011-12-15 Soitec Silicon On Insulator Herstellungsverfahren für ein hybrid- halbleitersubstrat
CN101714496B (zh) * 2009-11-10 2014-04-23 西安交通大学 利用多层薄膜型电子源的平面气体激发光源
US9058954B2 (en) 2012-02-20 2015-06-16 Georgia Tech Research Corporation Carbon nanotube field emission devices and methods of making same
KR101340356B1 (ko) * 2012-03-20 2013-12-10 한국과학기술원 탄소나노튜브/금속 나노복합소재 및 이의 제조방법
EP3933881A1 (en) 2020-06-30 2022-01-05 VEC Imaging GmbH & Co. KG X-ray source with multiple grids
US12230468B2 (en) 2022-06-30 2025-02-18 Varex Imaging Corporation X-ray system with field emitters and arc protection

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GB1473849A (en) * 1973-09-28 1977-05-18 Mullard Ltd Glow-discharge display device
US5608283A (en) * 1994-06-29 1997-03-04 Candescent Technologies Corporation Electron-emitting devices utilizing electron-emissive particles which typically contain carbon
US5623180A (en) * 1994-10-31 1997-04-22 Lucent Technologies Inc. Electron field emitters comprising particles cooled with low voltage emitting material
US5709577A (en) * 1994-12-22 1998-01-20 Lucent Technologies Inc. Method of making field emission devices employing ultra-fine diamond particle emitters
WO1997006549A1 (en) * 1995-08-04 1997-02-20 Printable Field Emmitters Limited Field electron emission materials and devices
US5667724A (en) * 1996-05-13 1997-09-16 Motorola Phosphor and method of making same
JP3568345B2 (ja) * 1997-01-16 2004-09-22 株式会社リコー 電子発生装置
CN1206690C (zh) * 1997-12-04 2005-06-15 可印刷发射体有限公司 形成场致电子发射材料的方法和场致电子发射装置
WO1999031702A1 (en) * 1997-12-15 1999-06-24 E.I. Du Pont De Nemours And Company Ion bombarded graphite electron emitters
US6250984B1 (en) * 1999-01-25 2001-06-26 Agere Systems Guardian Corp. Article comprising enhanced nanotube emitter structure and process for fabricating article

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110189967A (zh) * 2019-07-02 2019-08-30 电子科技大学 一种带有限流阻变层的场发射阴极结构及其制备方法

Also Published As

Publication number Publication date
GB2353631B (en) 2001-07-11
CN1360731A (zh) 2002-07-24
US6969536B1 (en) 2005-11-29
GB9915633D0 (en) 1999-09-01
JP2003504802A (ja) 2003-02-04
WO2001003154A1 (en) 2001-01-11
CA2378454A1 (en) 2001-01-11
GB2353631A (en) 2001-02-28
GB0015926D0 (en) 2000-08-23
AU5694400A (en) 2001-01-22
KR20020015707A (ko) 2002-02-28
EP1198818A1 (en) 2002-04-24

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