JP2003503839A5 - - Google Patents

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Publication number
JP2003503839A5
JP2003503839A5 JP2001506574A JP2001506574A JP2003503839A5 JP 2003503839 A5 JP2003503839 A5 JP 2003503839A5 JP 2001506574 A JP2001506574 A JP 2001506574A JP 2001506574 A JP2001506574 A JP 2001506574A JP 2003503839 A5 JP2003503839 A5 JP 2003503839A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2001506574A
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JP2003503839A (ja
JP5031159B2 (ja
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Priority claimed from US09/343,246 external-priority patent/US6319355B1/en
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Publication of JP2003503839A publication Critical patent/JP2003503839A/ja
Publication of JP2003503839A5 publication Critical patent/JP2003503839A5/ja
Application granted granted Critical
Publication of JP5031159B2 publication Critical patent/JP5031159B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2001506574A 1999-06-30 2000-06-22 可変振幅高周波エンベロープに応答するコイルを有するプラズマプロセッサ Expired - Lifetime JP5031159B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/343,246 1999-06-30
US09/343,246 US6319355B1 (en) 1999-06-30 1999-06-30 Plasma processor with coil responsive to variable amplitude rf envelope
PCT/US2000/017088 WO2001001443A1 (en) 1999-06-30 2000-06-22 Plasma processor with coil responsive to variable amplitude rf envelope

Publications (3)

Publication Number Publication Date
JP2003503839A JP2003503839A (ja) 2003-01-28
JP2003503839A5 true JP2003503839A5 (ja) 2010-12-24
JP5031159B2 JP5031159B2 (ja) 2012-09-19

Family

ID=23345299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001506574A Expired - Lifetime JP5031159B2 (ja) 1999-06-30 2000-06-22 可変振幅高周波エンベロープに応答するコイルを有するプラズマプロセッサ

Country Status (7)

Country Link
US (1) US6319355B1 (ja)
EP (1) EP1190436B1 (ja)
JP (1) JP5031159B2 (ja)
KR (1) KR100748050B1 (ja)
DE (1) DE60039874D1 (ja)
TW (1) TW494707B (ja)
WO (1) WO2001001443A1 (ja)

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US7096819B2 (en) * 2001-03-30 2006-08-29 Lam Research Corporation Inductive plasma processor having coil with plural windings and method of controlling plasma density
US6597117B2 (en) * 2001-11-30 2003-07-22 Samsung Austin Semiconductor, L.P. Plasma coil
US7169255B2 (en) * 2002-02-15 2007-01-30 Hitachi High-Technologies Corporation Plasma processing apparatus
US6783629B2 (en) 2002-03-11 2004-08-31 Yuri Glukhoy Plasma treatment apparatus with improved uniformity of treatment and method for improving uniformity of plasma treatment
US6700090B2 (en) * 2002-04-26 2004-03-02 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
US6905626B2 (en) * 2002-07-24 2005-06-14 Unaxis Usa Inc. Notch-free etching of high aspect SOI structures using alternating deposition and etching and pulsed plasma
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
KR100486724B1 (ko) * 2002-10-15 2005-05-03 삼성전자주식회사 사행 코일 안테나를 구비한 유도결합 플라즈마 발생장치
US6896773B2 (en) * 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
US9771648B2 (en) * 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
US9123508B2 (en) * 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
EP1803142A1 (en) * 2004-09-24 2007-07-04 Zond, Inc. Apparatus for generating high-current electrical discharges
US8192576B2 (en) * 2006-09-20 2012-06-05 Lam Research Corporation Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing
US20080204795A1 (en) * 2007-02-23 2008-08-28 Samsung Electronics Co., Ltd. Data transmission apparatus and method of controlling the same and method of processing data to be printed onto a printable medium
US20080230008A1 (en) * 2007-03-21 2008-09-25 Alexander Paterson Plasma species and uniformity control through pulsed vhf operation
US9123509B2 (en) 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
US20090004836A1 (en) * 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
US20090017229A1 (en) * 2007-07-10 2009-01-15 Varian Semiconductor Equipment Associates, Inc. Processing System Platen having a Variable Thermal Conductivity Profile
US7927986B2 (en) * 2008-07-22 2011-04-19 Varian Semiconductor Equipment Associates, Inc. Ion implantation with heavy halogenide compounds
US20100048018A1 (en) * 2008-08-25 2010-02-25 Varian Semiconductor Equipment Associates, Inc. Doped Layers for Reducing Electromigration
JP5227245B2 (ja) * 2009-04-28 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置
US8659335B2 (en) * 2009-06-25 2014-02-25 Mks Instruments, Inc. Method and system for controlling radio frequency power
JP5546921B2 (ja) * 2010-03-26 2014-07-09 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US8828883B2 (en) * 2010-08-24 2014-09-09 Micron Technology, Inc. Methods and apparatuses for energetic neutral flux generation for processing a substrate
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US20130256271A1 (en) * 2012-04-03 2013-10-03 Theodoros Panagopoulos Methods and apparatuses for controlling plasma in a plasma processing chamber
US9460894B2 (en) 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
US9502221B2 (en) * 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
TWI501307B (zh) * 2013-07-31 2015-09-21 Acm Res Shanghai Inc Pulse electrochemical polishing method and device
US10573496B2 (en) * 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
EP3088435A1 (de) 2015-04-28 2016-11-02 Sika Technology AG Zweistufiges verfahren zur herstellung eines polyurethan-heissschmelzklebstoffs mit niedrigem gehalt an monomeren diisocyanaten und hoher anfangsfestigkeit
WO2021222726A1 (en) * 2020-05-01 2021-11-04 Mattson Technology, Inc. Methods and apparatus for pulsed inductively coupled plasma for surface treatment processing

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