JP2003347447A - Semiconductor element housing package - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent lowering of air-tightness for the inside of a container due to generation of raised welds at the junction surface with a cover and peeling or damage is generated at the cover in a resin insulation basic material formed by the injection molding process. <P>SOLUTION: This semiconductor element housing package comprises an insulated basic material 1 which is formed by injection molding of a resin 13 including a fibrous filling material, through integral formation of a substrate 1b including the area 1a for placing a semiconductor element S at the center of an upper surface and a frame 1c surrounding the placing area 1a and a cover 2 mounted on the upper surface of the frame 1c covering the placing area 1a. A junction surface 3 with the cover 2 at the upper surface of the frame 1c includes a resin contact portion 4 which is formed through line contact of fluid of the resin 13 due to the injection molding and is also provided with a recess portion 5 like a groove provided along the resin contact portion 4 formed like a line. <P>COPYRIGHT: (C)2004,JPO

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device housing package for housing a semiconductor device.

[0002]

2. Description of the Related Art A semiconductor device mounted on a conventional information processing apparatus such as a computer, a laser diode for converting an electric signal into an optical signal, and an optical signal used for an optical fiber transmission system to a subscriber network in recent years. 2. Description of the Related Art A resin cavity type or resin-sealed type package is used for a semiconductor device containing an optical semiconductor element such as a photodiode for converting into an electric signal.

For example, when the package is a resin cavity type, these semiconductor devices are generally made of an electrically insulating material such as a thermosetting resin or a thermoplastic resin, and have an insulated base having a concave portion for accommodating a semiconductor element on an inner bottom surface. And a plurality of external lead terminals extending from the inside to the outside of the insulating base, and a lid attached to the upper surface of the frame of the insulating base via a sealing material and closing the insulating base. A semiconductor package is then attached to the bottom of the concave portion of the insulating base via a resin adhesive, and each electrode of the semiconductor element is electrically connected to one end of an external lead terminal via a bonding wire. After the connection, the lid is bonded to the upper surface of the frame of the insulating base via a resin sealing material, and the semiconductor element is hermetically housed in a container including the insulating base and the lid. It is manufactured by.

[0004] When the package is a resin-sealed type, a semiconductor element and an ASTM F-15 (Fe-Ni-C
and a plurality of external lead terminals, and a coating material made of an electrically insulating material such as a thermosetting resin or a thermoplastic resin. The semiconductor element on the substrate
While fixing via a brazing material such as a silicon eutectic alloy, each electrode of the semiconductor element is electrically connected to an external lead terminal via a bonding wire, and thereafter, the semiconductor element,
It is manufactured by coating a part of the base and the external lead terminals with a coating material.

In these semiconductor devices, when the package is of a resin cavity type, the insulating base is generally made of epoxy resin, and is formed by transfer molding.
It is manufactured by the method. However, the transfer molding method applies a pressure of about 1000 MPa to the resin injected into the mold at a temperature of about 180 ° C. for about 10 seconds to 100 seconds,
After molding the insulating substrate by thermally curing the resin, it was necessary to further cure the resin at a temperature of about 180 ° C. for about 5 hours.

For this reason, in recent years, a method of forming an insulating substrate by injection molding (injection molding) has been adopted due to demands for cost reduction, shortening of a molding cycle time, and shortening of steps. In this case, as the resin, for example, a thermoplastic resin such as a liquid crystal polymer (LCP) or a polyphenylene sulfide (PPS) resin is used. Also,
In general, these resins contain glass fibers to reduce the coefficient of thermal expansion and improve mechanical properties such as strength and elastic modulus, and semiconductors using an insulating substrate obtained by molding these resins. The element storage package has improved dimensional, thermal and mechanical stability against environmental temperature changes and external stress.

As a method of manufacturing an insulating substrate by injection molding, an external lead terminal is set at a predetermined position in a mold in advance, and a side gate or a side gate is inserted into a mold cavity from a resin injection port of the mold. A method is employed in which a resin containing glass fiber is injected through a pin gate, a submarine gate or the like to form an insulating substrate. As a result, a molded body in which the external lead terminals are integrally attached from the inside to the outside of the insulating base is obtained.

[0008]

However, in the case of forming a molded body in which the external lead terminals are integrally attached from the inside to the outside of the insulating base by conventional injection molding,
A weld may be formed on the upper surface of the insulating base at the joint surface with the lid. Such welds are considered to be formed for the following reasons.

As shown in the cross-sectional view of the mold for showing the resin flow in the mold and the plan view of the insulating base during molding, the mold 20 for forming the insulating base 21 is shown in FIG. In the mold cavity C, there is provided a protruding projection 20a for forming the insulating base 21 in a container shape.
5 is injected from the resin injection port 22 located on the side of FIG.
As shown by the arrow in (b), the inside of the mold cavity C proceeds from the side surface on the resin injection port 22 side toward the opposite side surface direction. FIG. 5A is a perspective view of the mold cavity C for showing the resin flow in the mold cavity C, and the arrows indicate the direction of the resin flow in the mold cavity C.

The projection 20a is provided in the mold cavity C.
Therefore, the resin 23 injected from the resin injection port 22 here
The flow is divided right and left, and merges again behind the projection 20a to form the resin association portion 24. When the resin 23 moves forward in the mold cavity C, the leading end of the flow of the resin 23 forms a fountain flow as shown in a schematic diagram showing the resin flow in the mold cavity C in FIG. ing.

For this reason, in the vicinity of the resin association section 24,
As shown in FIG. 6, the glass fibers 25 in the resin 23 are arranged in a direction substantially perpendicular to the flow direction of the resin along the direction of the resin association portion 24. Then, in this state, the resin 23 associates, and as shown in the schematic diagram of the cross section of the resin association portion 24 in FIG.
The glass fibers 25 are oriented in a direction substantially perpendicular to the joining surface 26 at the joining portion 26 on the joining surface 26 on the upper surface of the frame portion of the insulating base 21 as a finished product. On the other hand, in most parts of the insulating substrate 21 other than the resin association portion 24, the glass fibers 25 are arranged along the direction of resin flow, that is, in a direction substantially parallel to the bonding surface 26.

Thereafter, the resin 23 filled in the mold cavity C is solidified and contracted by cooling. At this time, in the resin association portion 24 in which the glass fibers 25 are oriented in a direction substantially perpendicular to the bonding surface 26, since the glass fibers 25 are oriented in the height direction of the frame portion, In contrast, the area around the resin association portion 24 where the glass fibers 25 are oriented substantially parallel to the bonding surface 26 contracts in the height and thickness directions. Therefore, FIG.
As shown in FIG. 5, a weld 27 having a height W of about 30 to 70 μm is formed on the bonding surface 26.

The insulating substrate 21 having such a weld 27
A semiconductor element is attached to the inner bottom surface of the semiconductor element via a resin adhesive, and each electrode of the semiconductor element is electrically connected to one end of an external lead terminal via a bonding wire. When the semiconductor device is manufactured by hardening and joining the lid at a temperature of about 120 to 150 ° C. through a resin sealing material on the upper surface of the part, the height of the bulge of the weld 27 is about 30 to 70 μm. When the temperature is decreased from the sealing temperature of about 150 ° C. to normal temperature, or when a load such as a temperature cycle is applied in an environment in which the semiconductor device is used, or when an external force is applied, the insulating substrate 21 The raised weld 27 acts as a fulcrum for "lever", and the lid is peeled off at a portion adjacent to the raised portion, resulting in impaired airtightness inside the container for housing the semiconductor element. Was

In the case where the semiconductor element housed inside is a solid-state image sensor and the lid is made of a transparent glass member,
There has been a problem that the raised weld portion serves as a fulcrum, and the glass is broken along the raised portion, thereby impairing the airtightness.

The present invention has been made in view of the above-mentioned conventional problems, and a weld is formed at a portion where the resin flow by injection molding is associated with a joint surface of the upper surface of the insulating substrate with the lid, thereby forming a protrusion. Semiconductors that keep the inside of the container airtight for a long time without peeling or breakage of the lid attached to the upper surface of the insulating base via the resin sealing material even if An object of the present invention is to provide a package for housing a semiconductor element that can operate the element normally and stably.

[0016]

According to the present invention, there is provided a package for housing a semiconductor element, wherein a resin containing a fibrous filler is injection-molded to form a substrate section having a mounting section for a semiconductor element at the center of the upper surface, and a mounting section. And a lid attached to an upper surface of the frame so as to cover the mounting portion, and a joining surface of the upper surface of the frame with the lid. A resin associated portion formed by staggering the flow of resin by injection molding, and a groove-shaped recess along the streak-shaped resin associated portion is provided. is there.

Further, the semiconductor device housing package of the present invention is characterized in that, in the above structure, the concave portion has a U-shaped cross section.

According to the package for housing a semiconductor element of the present invention, the bonding surface of the insulating base with the lid on the upper surface of the frame portion is
Since the flow of the resin by injection molding is provided with a groove-like concave portion along the resin association portion formed in a streak shape, even if a weld occurs in the resin association portion, the weld is formed in the concave portion, It is not formed so as to protrude from the upper surface of the frame on the joint surface with the lid. Therefore, after the lid is hardened and joined at a temperature of about 120 to 150 ° C. through a resin sealing material on the upper surface of the frame portion of the insulating base, when the temperature is lowered to normal temperature or in a use environment of a semiconductor device, a temperature cycle or the like is performed. Even when a load is applied or an external force is applied, the welded portion does not act as a fulcrum of the lever on the lid, and peeling or breakage of the lid in the region adjacent to the welded portion is prevented. This does not occur, and the inside of the container is kept airtight for a long period of time, and the semiconductor element to be housed can be operated normally and stably.

Further, since the concave portion has a U-shaped cross section, the concave portion has no corners where stress is concentrated, and the stress applied to the concave portion is well dispersed in the concave portion. When the lid is cured and joined at a temperature of about 120 to 150 ° C via a resin sealing material on the top of the frame, and then cooled to room temperature or when a load such as a temperature cycle is applied in the operating environment of the semiconductor device・ Even if an external force is applied, no cracks occur in the frame of the insulating base, the inside of the container is kept airtight for a long period of time, and the semiconductor elements contained can be operated normally and stably. Becomes

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a semiconductor device housing package of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1A is a cross-sectional view showing an example of an embodiment of a semiconductor element housing package of the present invention, FIG. 1B is a side view thereof, and FIG. 2A is another example of the embodiment. FIG. 2B is a side view thereof. FIG. 3A is a perspective view of a cavity of a mold for forming an insulating base constituting the package for housing a semiconductor element of the present invention.
(B) is a sectional view of the mold and a plan view of the insulating base for showing the resin flow in the mold.

In these figures, 1 is an insulating base, 2 is a lid, and these mainly constitute a semiconductor element housing package 6 for housing a semiconductor element S inside. 1a is a mounting portion of the semiconductor element S, 1b is a substrate portion having the mounting portion 1a, 1c is a frame portion surrounding the mounting portion 1a, and these are integrally formed to constitute the insulating base 1. Become.

The insulating base 1 has a function as a support member for supporting the semiconductor element S, and a mounting portion for mounting the semiconductor element S at substantially the center of the substrate 1b constituting the bottom thereof. The semiconductor element S is bonded and fixed on the mounting portion 1a via a resin adhesive. Also,
The insulating base 1 has a semiconductor element S
A frame portion 1c surrounding the mounting portion 1a on which is mounted is formed. The frame part 1c forms a space for accommodating the semiconductor element S inside.

Such an insulating substrate 1 is made of a resin containing a fibrous filler, and is manufactured by injection molding. In addition, a groove-shaped concave portion 5 is formed on a joint surface 3 of the upper surface of the frame portion 1c with the lid 2 along a resin association portion 4 formed by staggering the flow of resin by injection molding. . This is important in the semiconductor device housing package of the present invention.

It should be noted here that the resin joining portion 4 formed by staggering the flow of the resin by injection molding on the joining surface 3 of the upper surface of the frame portion 1c with the lid 2 is described in FIG. b) As shown in the cross-sectional view of the mold for showing the flow of the resin in the mold, the resin 13 injected in the molding of the insulating base 1 is separated in two or more directions and then reunited to form a cover. Body 2
Indicates that a linear streak is formed on the joint surface 3.

The position of the resin association portion 4 formed on the bonding surface 3 differs depending on the position of the resin injection port 12 for injecting the resin 13 into the mold cavity C and the thickness of the frame portion 1c. As shown in the cross-sectional view of the mold in FIG. 3B, when the resin injection port 12 is located on the side surface of the insulating base 1, the resin 13 injected from the resin injection port 12 at the time of molding is used. The projection 10a in the cavity C is divided into left and right by the projection 10a.
In order to join again behind 10a, the resin injection port of the frame 1c
The resin association part 4 is formed on the upper surface of the surface opposite to the surface 12.

In this case, the resin 13 containing the fibrous filler is used.
Are associated in the form of a frontal collision while forming a fountain flow, so that the fibrous fillers are arranged in the height direction of the frame portion 1c in the resin association portion 4 in the insulating base 1, and the lid is provided in the vicinity of the resin association portion 4. It is arranged parallel to the joint surface 3 with the body 2. As described above, since the orientation of the fibrous filler is different between the resin association portion 4 and the periphery thereof, the amount of resin shrinkage differs between the resin association portion 4 and the periphery thereof during the process of cooling and solidifying the resin 13. However, in the present invention, since the groove-shaped concave portion 5 is formed corresponding to the position where the resin association portion 4 is formed, the weld is formed in the resin association portion 4. Occurs, the weld is formed in the concave portion 5 and does not protrude from the joint surface 3 of the upper surface of the frame portion 1c with the lid 2.

Therefore, after the lid 2 is hardened and joined at a temperature of about 120 to 150 ° C. to the upper surface of the frame portion 1c of the insulating base 1 via the resin sealing material 9, the temperature may be lowered to room temperature, or the semiconductor device may be used. Even when a load such as a temperature cycle or an external force is applied in the use environment, the weld portion does not function as a fulcrum of the “lever” with respect to the lid 2, and the region adjacent to the weld portion is not provided. Accordingly, the lid 2 is not peeled off or damaged, the inside of the container is kept airtight for a long time, and the semiconductor element S to be accommodated can be operated normally and stably.

FIG. 1A is a cross-sectional view of a semiconductor element housing package 6 corresponding to this shape.
The structure shown in the side view of FIG. FIG.
FIG. 4A shows a perspective view of the cavity of the mold, and FIG. 4B shows a resin injection port 12 as shown in a sectional view of the mold and a plan view of the insulating base 1 for showing the resin flow in the mold. In the case where two pairs of different thicknesses are located at the center of the lower surface of the insulating base 1 and the opposite surfaces of the frame portion 1c are paired, the resin 13 injected from the resin injection port 12 at the time of molding is used as the mold cavity. After filling the bottom portion of the insulating substrate 1 with 10, the thick portion 17 of the frame portion 1c is first filled, and then the thin portion 18 of the frame portion 1c is filled later. At this time, the resin previously filled in the thick portion 17 serves as a flow leader, so that the resin 13 wrapping around from the thick portion 17 is filled in the thin portion 18 and the frame portion 1c
A resin association portion 4 is formed near the center of the upper surface of the thinner portion. Also in this case, since the resin 13 containing the fibrous filler associates in the form of a frontal collision while forming a fountain flow, the fibrous filler is arranged in the resin association portion 4 in the height direction of the frame portion 1c.

Since the concave portion 5 is formed at a position different depending on the position of the resin inlet 12 and the thickness of the frame portion 1c, the resin associated portion 4 of the insulating base 1 is formed on the metal where the resin associated portion 4 is formed. By forming in advance the protrusions having the streak-like resin association portions 4 as center lines at the positions of the molds, the protrusions are formed in a groove shape.

The width of the groove-shaped concave portion 5 is preferably in the range of 1/20 to 3/10 of the width D of the insulating substrate 1, and if it is less than 1/20, it depends on the type of resin and fibrous filler used. There is a possibility that the bottom of the weld ridge may remain on the bonding surface 3. If the height exceeds 3/10, when the lid 2 is placed on the insulating base 1 when the lid 2 is bonded, the insulating base 1 And lid 2
A gap having a large ratio of the width of the recess to the width of the insulating base 1 is formed between the cover 2 and the cover 2, which may be cracked or deformed when an external force is applied. Further, the depth of the groove-shaped recess 5 is preferably in the range of 2/100 to 7/100 of the height T of the insulating base 1, and if it is less than 2/100, the weld ridge may protrude above the bonding surface 3. When the ratio exceeds 7/100, the embedding property of the resin sealing material 9 deteriorates, and the airtightness inside the container including the insulating base 1 having the frame portion 1c and the lid 2 may not be maintained. is there.

Further, according to the semiconductor element housing package 6 of the present invention, the concave portion 5 formed on the joint surface 3 is formed in a U-shaped cross section, so that the frame portion 1 of the insulating base 1 is formed.
(c) After the lid 2 is hardened and joined at a temperature of about 120 to 150 ° C. via the resin sealing material 9 on the upper surface, a load such as a temperature cycle has been applied in a case where the temperature is lowered to room temperature or in a usage environment of the semiconductor device. Even when external force or the like is applied, the concave portion 5 has no corner where the stress is concentrated, and the stress applied to the concave portion 5 is well dispersed in the concave portion 5, and as a result, the frame portion 2 of the insulating base 1 is formed. Resin cracks due to stress concentration do not occur in the concave portion 5, and the inside of the container can be kept airtight for a long period of time, and the semiconductor element S to be housed can be operated normally and stably.

It should be noted that such a U-shaped cross-sectional shape has a width and depth in the range of the groove-shaped recess 5 from the viewpoint of dispersing the stress applied to the recess 5 in the recess 5 well. It is preferable that the radius of curvature of the corner of the bottom of the concave portion 5 is an arc having a depth dimension (in the range of 2/100 to 7/100 of the height T of the insulating base 1) or more.

Further, the lid 2 is provided on the mounting portion 1 a of the insulating base 1.
When the semiconductor element S to be housed is a solid-state imaging device, a transparent plate material such as glass or translucent resin is used, and in other cases, a plate material such as ceramics, metal, or resin is applied, and the reliability of hermetic sealing is applied. Glass and metal are preferably used from the viewpoint of high cost and low cost.

The lid 2 made of glass has a predetermined size using a cutting device such as a dicing machine by cutting a wide-area glass plate made of glass such as borosilicate glass, barium borosilicate glass, soda glass, crystallized glass, or the like. It is manufactured by cutting into pieces.

The metal lid 2 is made of iron-nickel-
It is made of a metal material such as a cobalt alloy or an iron-nickel alloy / copper / aluminum, and has a predetermined shape by subjecting an ingot of an iron-nickel-cobalt alloy to a conventionally known metal working method such as a rolling method or a punching method. It is produced in.

The thickness of the lid 2 is preferably 0.5 to 1.5 mm
If less than 0.5 mm, the mechanical strength is reduced,
There is a tendency that cracks, deformation, and the like are easily generated by application of an external force, and it is difficult to hermetically accommodate the semiconductor element S.
If the thickness exceeds 1.5 mm, the lid 2 is bonded to the insulating base 1 via the resin sealing material 9, and when heat is applied to the insulating base 1 and the lid 2, a large amount of heat is applied between the two. In some cases, thermal stress is generated, and the lid 2 is separated from the insulating substrate 1 or a crack is generated in the insulating substrate 1, so that the airtightness inside the container including the insulating substrate 1 and the lid 2 cannot be maintained. .

After attaching the semiconductor element S to the insulating base 1, the lid 2 is joined to the insulating base 1 via the resin sealing material 9.

The insulating base 1 and the lid 2 are joined via the resin sealing material 9 such that the semi-cured resin sealing material precursor is sandwiched between the lid 2 and the upper surface of the insulating base 1. Put on,
Finally, heat treatment is performed at a temperature of 120 to 150 ° C. for 0.5 to 5 hours to thermally cure the semi-cured resin sealing material precursor. At this time, because the viscosity of the resin sealing material precursor is high, if a corner is present in the concave portion 5, it becomes difficult to embed the resin sealing material 9 into the corner, and airtightness tends to be impaired. Therefore, from the viewpoint of keeping the inside of the container airtight for a long period of time and operating the semiconductor element S to be accommodated normally and stably, it is preferable that the cross-sectional shape of the concave portion 5 is U-shaped.

The resin sealing material 9 for joining the lid 2 to the upper surface of the insulating base 1 is, specifically, a bisphenol-type epoxy resin, a novolak-type epoxy resin, a naphthalene-type epoxy resin, or a biphenyl-type epoxy resin. A suitable amount of a curing agent such as an aromatic amine-based curing agent or an acid anhydride-based curing agent is added to an epoxy resin such as an epoxy resin, and if necessary, a curing accelerator such as an imidazole-based curing accelerator or a dicyandiamide-based curing accelerator is added and mixed. The paste is made into a paste, and the paste is applied to the lower surface of the lid 2 in a frame shape by using a conventionally known screen printing method. Thereafter, the paste is sealed at a temperature of about 80 ° C. in a semi-cured resin. By being used as a stopper material precursor, it is previously attached to the lower surface of the lid 2.

For the purpose of absorbing the thermal stress caused by the difference in the thermal expansion coefficient between the insulating base 1 and the lid 2, the resin sealing material 9 is made of flexible particles such as soft particles or acrylic rubber particles. Material or a moisture-absorbing filler for the purpose of preventing moisture from entering into the container formed of the insulating base 1 having the frame portion 1c and the lid 2 via the resin sealing material 9. Good.

As the resin integrally forming the insulating base 1 having the frame portion 1c, for example, a liquid crystal polymer (LCP)
And a thermoplastic resin such as polyphenylene sulfide (PPS) resin. In particular, the semiconductor element housing package 6 obtained by orienting rigid molecules in the flow direction of the resin to have a lower thermal expansion coefficient and a higher strength and a higher elastic modulus by the synergistic effect with the fibrous filler to obtain the obtained semiconductor element housing package 6 It is preferable to use LCP from the viewpoint of improving dimensional, thermal and mechanical stability against environmental temperature changes and external stress.

Examples of the fibrous filler contained in the insulating substrate 1 include glass fiber, carbon fiber, aromatic polyamide fiber, potassium titanate fiber, stone fiber, brass fiber, stainless steel fiber, steel fiber, and steel fiber. Ceramic fibers and boron whisker fibers are used. These fiber fillers serve as a reinforcing material for the resin 13, and in particular, from the viewpoint that mechanical properties such as a low thermal expansion coefficient and a high strength and a high elastic modulus in the insulating base 1 can be obtained at low cost. Is preferably a glass fiber. The semiconductor element housing package 6 using the insulating base 1 obtained by molding the resin 13 has improved dimensional, thermal and mechanical stability against environmental temperature changes and external stress.

If the average diameter of the glass fibers is less than 3 μm, the reinforcing effect tends to be small, and it tends to be difficult for the insulating substrate 1 to have a low coefficient of thermal expansion and a high elastic modulus.
If it exceeds 30 μm, the moldability tends to decrease, the strength of the welded portion tends to decrease, and the surface appearance tends to deteriorate. Therefore,
The average diameter of the glass fibers is preferably 3 to 30 μm, and more preferably 3 to 15 μm.

The length of the glass fiber is not particularly limited, but preferably has an average length of 0.05 to 2 mm in the state of being present in the melt-kneaded resin composition before molding.

The content of the glass fiber is preferably 5% by weight or more from the viewpoint of strength, rigidity and dimensional stability with respect to the insulating substrate 1; From the viewpoint of improving the properties, the content is preferably 80% by weight or less. Therefore, the content of glass fiber is
It is preferably from 10 to 80% by weight, and more preferably from 10 to 60% by weight.

Further, the glass fiber is preferably subjected to a surface treatment according to the type of the resin 13 in order to improve the affinity with the resin 13, for example, a treatment with a silane coupling agent or a titanium coupling agent. And / or immersion in an aqueous solution of a sizing agent such as an epoxy resin, a urethane resin, or an acrylic resin.

In order to improve the mechanical properties, electrical properties, thermal properties, surface properties, flammability, etc., and to reduce costs, the insulating substrate 1 is provided with a filler other than glass fiber. May be contained within a range that does not impair, for example, mica, talc, silica, calcium carbonate, glass beads, glass flakes, glass microballoons, clay, wollastenite, titanium oxide, zinc oxide, barium sulfate, and graphite. And the like, and granular or plate-like inorganic fillers. Further, a method of including a hygroscopic filler for the purpose of preventing moisture from entering the inside of the container including the insulating base 1 and the lid 2 via the insulating base 1 can be used.

Further, the resin 13 constituting the insulating base 1 is made of a known substance such as another thermoplastic resin, a compatibilizer,
It contains stabilizers such as antioxidants and ultraviolet absorbers, antistatic agents, flame retardants, coloring agents such as dyes and pigments, lubricants, crystallization accelerators, etc. within a range that does not impair the purpose of the present invention. Is also good.

The resin 13, glass fiber, and other additives constituting the insulating base 1 are pelletized by kneading for use in a molding method described later. The method for producing such a pellet is not particularly limited and may be a known method.For example, after mixing the resin 13 or glass fiber and other additives using a mixing means such as a tumbling mixer, a vented single shaft Prepare a method of pelletizing with an extruder, or prepare a mixture of resin 13 and additives in advance using a powerful mixing means such as a super mixer, and then use a vented twin-screw extruder to A method generally used industrially, such as a method of supplying and pelletizing, is appropriately applied.

As a method for manufacturing the insulating substrate 1 by injection molding, the external lead terminal 7 is set in a predetermined position in a mold 10 in advance, and a side gate, a pin gate and a submarine are set in a mold cavity 11. By injecting the resin 13 containing glass fiber from the resin injection port 12 using a gate or the like, a molded body in which the external lead terminals 7 are integrally attached from the inside to the outside of the insulating base 1 is obtained.

A plurality of external lead terminals 7 are attached to both ends of the frame 1c so as to protrude into and out of the frame 1c.
Each electrode of the semiconductor element S is connected to a region of the external lead terminal 7 protruding inside the frame portion 1c via an electric connection means 8 such as a bonding wire, and a region protruding outside the frame portion 1c is connected to an external electric circuit. Each electrode of the semiconductor element S is electrically connected to an external electric circuit via the external lead terminal 7 by electrically connecting the semiconductor element S (not shown).

The external lead terminals 7 are made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy. For example, an ingot made of an iron-nickel-cobalt alloy or the like is formed by a rolling method or the like. Punching method
It is formed into a predetermined shape by applying a conventionally known metal working method.

The external lead terminal 7 is attached to the frame 1c by setting the external lead terminal 7 at a predetermined position in the mold 10 before forming the insulating base 1 having the frame 1c by injection molding. By doing so, the frame 1c is integrally attached to a predetermined position with both ends protruding inside and outside of the frame 1c.

Further, the external lead terminal 7 is coated with a metal such as nickel or gold having good conductivity, excellent corrosion resistance, and good wettability with a brazing material on the exposed outer surface thereof by a plating method to a predetermined thickness (1). 2020 μm), it is possible to effectively prevent oxidative corrosion of the external lead terminals 7 and to connect the external lead terminals 7 to electrical connection means 8 such as bonding wires and to connect the external lead terminals 7 The connection reliability with an external electric circuit can be made high. Therefore, the external lead terminal 7 is coated with a metal such as nickel or gold having a good conductivity and excellent corrosion resistance and a good wettability with the brazing material to a thickness of 1 to 20 μm on the exposed surface by plating. Is preferred.

Insulating substrate 1 with external lead terminals 7 attached
Further, a lid 2 made of a plate material such as glass, ceramics, metal, or resin is attached to the upper surface thereof via a resin sealing material 9, and the lid 2 closes the mounting portion 1 a of the insulating base 1. The inside of the container composed of the insulating base 1 and the lid 2 is hermetically sealed,
It has a function of hermetically housing the semiconductor element S inside the container.

Thus, according to the semiconductor element housing package 6 of the present invention, the semiconductor element S is bonded and fixed to the mounting portion 1a of the insulating base 1 via the resin adhesive, and each electrode of the semiconductor element S is fixed to a predetermined position. The external lead terminal 7 is electrically connected to the external lead terminal 7 via an electric connection means 8 such as a bonding wire. Thereafter, the lid 2 is joined to the upper surface of the frame 1c via a resin sealing material 9 to form a frame. A semiconductor device as a product is completed by hermetically housing the semiconductor element S in a container including the insulating base 1 having the insulating layer 1c and the lid 2.

The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.

[0058]

According to the package for housing a semiconductor element of the present invention, the resin association formed by streaking the flow of the resin by injection molding on the joint surface of the upper surface of the insulating base with the lid. Since a groove-shaped recess along the part was provided,
Even if a weld occurs at the resin associated portion, the weld is formed in the recess, and does not protrude from the joint surface of the upper surface of the frame with the lid. Therefore, after the lid is hardened and joined at a temperature of about 120 to 150 ° C. through a resin sealing material on the upper surface of the frame portion of the insulating base, when the temperature is lowered to normal temperature or in a use environment of a semiconductor device, a temperature cycle is performed. Even when a load is applied or an external force is applied, the weld portion does not act as a fulcrum at the leverage on the lid,
The lid is not peeled off or damaged in a region adjacent to the weld portion, the inside of the container is kept airtight for a long period of time, and the semiconductor element to be accommodated can be operated normally and stably.

Since the cross section of the concave portion is U-shaped, the concave portion does not have a corner where stress concentrates, and the stress applied to the concave portion is well dispersed in the concave portion. When the lid is cured and joined at a temperature of about 120 to 150 ° C via a resin sealing material on the top of the frame, and then cooled to room temperature or when a load such as a temperature cycle is applied in the operating environment of the semiconductor device・ Even if an external force is applied, no cracks occur in the frame of the insulating base, the inside of the container is kept airtight for a long period of time, and the semiconductor elements contained can be operated normally and stably. Becomes

[Brief description of the drawings]

FIG. 1A is a cross-sectional view showing an example of an embodiment of a semiconductor device housing package of the present invention, and FIG. 1B is a side view thereof.

FIG. 2A is a cross-sectional view illustrating another example of the embodiment;
(B) is a side view thereof.

FIG. 3A is a perspective view of a cavity of a mold for molding an insulating base, and FIG. 3B is a cross-sectional view of the mold and a plan view of the insulating base for showing a resin flow in the mold. It is.

FIG. 4A is a perspective view of a cavity of a mold for molding an insulating substrate of another example, and FIG. 4B is a cross-sectional view of the mold for showing a resin flow in the mold, and FIG. It is a top view of a base.

FIG. 5A is a perspective view of a mold cavity for showing a resin flow in a mold cavity in a conventional example, and FIG.
FIG. 2 is a cross-sectional view of the mold for showing a resin flow in the mold and a plan view of the insulating base during molding.

FIG. 6 is a schematic diagram showing a resin flow in a mold cavity.

FIG. 7 is a schematic view of a cross section of a resin association portion.

[Explanation of symbols]

1 ... Insulating substrate 1a ・ ・ ・ ・ ・ ・ ・ ・ Placement part 1b ..... substrate part 1c ..... frame part 2 ... Lid 3 .......... joining surface 4 ... Resin association section 5 recess 6 Package for semiconductor device storage S ... Semiconductor element

Claims (2)

[Claims] 1. An insulating substrate in which a resin containing a fibrous filler is injection-molded to integrally form a substrate portion having a mounting portion for a semiconductor element and a frame portion surrounding the mounting portion at the center of the upper surface. And a lid attached to the upper surface of the frame portion so as to cover the mounting portion, wherein the joining surface of the upper surface of the frame portion and the lid is formed of the resin by the injection molding. A package for housing a semiconductor element, comprising: a resin association portion formed by flow associated in a streak shape; and a groove-shaped concave portion provided along the streak-like resin association portion. 2. The package for accommodating a semiconductor element according to claim 1, wherein a cross-sectional shape of said recess is U-shaped.