JP2003346642A - Electron source device and its manufacturing method as well as display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electron source device with a high electron emission capacity, low cost and long life and a display device with a high luminous efficiency and reliability. <P>SOLUTION: The electron source device is provided with a first conductor layer formed on an insulating board, an alumina binding layer formed on it including a porous alumina having a number of fine pores and a bonding inorganic material, a conductive layer formed inside the fine pores of the porous alumina, and a second conductor layer formed in electric contact with the conductive layer on the alumina bonding layer. It is also provided with a barrier layer made of alumina around the periphery of a bottom end part of the fine pores, and it is so structured that electrons are emitted by voltage impressed between the first conductor layer and the second conductor layer. <P>COPYRIGHT: (C)2004,JPO

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an electron source device, a method of manufacturing the electron source device, and a display device.

[0002]

2. Description of the Related Art In recent years, field emission displays (hereinafter referred to as FEDs) have been developed as flat-type image display devices. This FED has a face plate and a rear plate which are arranged to face each other with a predetermined gap therebetween. Phosphor layers of three colors are formed on the inner surface of the face plate, and these fluorescent layers are formed on the inner surface of the rear plate. An electron emission source is provided for emitting electrons that excite the body.

Conventionally, a structure called a spindle type has been proposed as an electron emission source of an FED. This electron emission source has a structure in which an electric field is concentrated on a sharp portion of an electron emission portion formed of Mo, and electrons are emitted from the electron emission portion by a voltage applied between the electron emission portion and the phosphor to emit light. are doing. With this method, a thin flat display device is realized.

[0004]

However, the above-mentioned electron emission source has a very fine structure, and it has been extremely difficult to form a large number of electron sources uniformly and simply. Therefore, there is a problem that it is difficult to manufacture a large-sized flat display device using such an electron emission source, and that even a flat display device having a small screen increases manufacturing cost. In addition, since a slight difference in the shape of the electron emission source causes a difference in the electron emission ability, it has been difficult to obtain a stable image.

[0005] Recently, carbon nanotubes (C) are formed in extremely fine pores (nanoholes) having a diameter of several nm to several hundred nm, which are obtained by anodic oxidation of aluminum (Al).
A structure has been proposed in which N) is formed to serve as an electron emission source (see Displays 21 (2000) P99-104).

However, in the electron emission source having such a structure, not only is CN expensive, but if the degree of vacuum in the tube is low, the gas in the tube contaminates CN and the life is shortened. There were many problems.

SUMMARY OF THE INVENTION The present invention has been made to solve these problems. An electron source device having a high electron emission capability and a long life even at a low vacuum degree, and an extremely inexpensive and simple manufacturing of such an electron source device is provided. It is an object of the present invention to provide a display device having a high luminous efficiency, a low cost and a high reliability.

[0008]

According to the present invention, there is provided an electron source device comprising: a first conductive layer formed on an insulating substrate;
A layer formed on the first conductor layer, including porous alumina having a large number of micropores obtained by anodic oxidation of aluminum and a binding inorganic material, and further having an aluminum residual portion; An alumina binding layer, a conductive layer made of a conductor or a semiconductor formed in the micropores of the porous alumina, and a conductive layer formed on the alumina binding layer in electrical contact with the conductive layer. A bottom end portion of the micropores and the aluminum remaining portion are separated by a barrier layer made of alumina in the alumina binding layer, and the first conductive layer and the second conductive layer are separated from each other by a barrier layer made of alumina. Electrons are emitted by a voltage applied between the second conductive layer and the second conductive layer.

In this electron source device, the binding inorganic material may be frit glass. Further, the alumina binding layer may have a predetermined pattern, and the second conductor layer may have a pattern different from the pattern of the alumina binding layer. Further, a structure in which an insulator layer is formed between patterns of the alumina binding layer can be employed.

[0010] In a method of manufacturing an electron source device according to the present invention, a step of forming a first conductor layer on an insulating substrate;
A paste forming step of forming a layer of a conductive paste containing aluminum powder as a main component and containing a binding inorganic material on the conductive layer, and heating and baking the conductive paste layer to bind the aluminum paste. Forming a layer; anodizing the aluminum binding layer to form an alumina binding layer containing porous alumina having a large number of micropores and a binding inorganic material; Forming a conductive layer made of a conductor or a semiconductor in the fine pores of alumina; and forming a second conductor layer in electrical contact with the conductive layer on the alumina binding layer, In the step of anodizing the aluminum binding layer, a portion of aluminum is left without being oxidized, and between the remaining portion of aluminum and the bottom end of the fine pores of porous alumina, alumina is formed. And forming a rear layer.

In this method of manufacturing an electron source device, the binding inorganic material may be frit glass.
Further, the conductive paste layer can be formed in a predetermined pattern. Further, the conductive paste layer can be formed in a predetermined pattern, and the second conductive layer can be formed in a pattern different from the pattern of the conductive paste layer.

Further, an insulating layer for separating the pattern of the conductive paste layer is formed between the step of forming the conductive paste layer in a predetermined pattern and the step of forming the second conductive layer. Can be included.

[0013] The display device according to the present invention comprises a first substrate and a second substrate which are arranged to face each other, a phosphor layer provided on an inner surface of the first substrate, and a second substrate. And an electron source that is provided on the inner surface side and emits electrons that excite the phosphor layer. The electron source is the above-mentioned electron source device.

In this display device, a third electrode can be provided on the side opposite to the alumina binding layer with the second conductor layer interposed therebetween.

In the electron source device according to the present invention, a conductive layer is formed inside the fine holes of the porous alumina (aluminum oxide) layer obtained by anodic oxidation of aluminum, and the bottom end of the fine holes is formed. And a barrier layer made of alumina between the aluminum base portion remaining without being anodized, and this barrier layer becomes a tunnel barrier layer for electrons.

A voltage is applied between the second conductive layer formed to be in electrical contact with the conductive layer and the first conductive layer electrically connected to the aluminum base. By doing so, an electric field is concentrated on the barrier layer and electrons are emitted, so that a uniform electron source having a high electron emission ability can be obtained. In addition, since direct contact between the electron emitting portion and the atmosphere gas is avoided, deterioration due to contamination of the electron emitting portion hardly occurs, and a long-life display device is realized.

Further, a conductive paste containing an aluminum powder and a binding inorganic material is applied by printing or the like, and then the applied layer is heated and fired, and then anodized to obtain a porous alumina. Can be formed in a predetermined pattern, so that an electron source device can be obtained extremely inexpensively and easily.

[0018]

Next, embodiments of the present invention will be described with reference to the drawings.

As shown in FIG. 1, an electron source device according to a first embodiment of the present invention has a first pattern formed in a predetermined pattern on an insulating substrate 1 such as a rear plate glass substrate.
And an alumina binding layer 3 having the same pattern as the conductive layer 2 is formed on the conductive layer 2. The alumina binding layer 3 has a structure in which a binding portion 4 made of a binding inorganic material and an anodic oxidation portion 5 obtained by anodic oxidation of aluminum are uniformly mixed. Also,
A pattern of the second conductor layer 6 is formed on the alumina binding layer 3.

The first conductor layer 2 can be formed on the entire surface of the insulating substrate 1 without patterning.
Further, it is also possible to form the alumina binding layer 3 in a different pattern from that of the lower first conductive layer 2. Further, in order to reliably insulate and separate each part of the pattern of the alumina binding layer 3, as shown in FIG. 2, a pattern of the insulating substrate 3 is formed between the patterns of the alumina binding layer 3 on the insulating substrate 1. be able to. As an insulating material constituting such an insulating layer 7, for example, an insulating oxide such as silica (SiO ₂ ) can be used. In FIG. 2, the illustration of the first conductor layer 2 is omitted.

Examples of the material for forming the first conductor layer 2 include conductive metals such as Al, Au, and Ag.

In order to form a pattern of these metals, a method of depositing these metals through a mask having openings of a desired pattern, or a method of depositing a metal layer on the entire surface of an insulating substrate, sputtering, After forming by a method such as plating, a method of forming a resist layer having a desired pattern on the metal layer by photolithography and then etching and removing the metal layer with an acid or the like can be employed.

Further, a conductive metal oxide such as ITO or SnO ₂ can be used. These metal oxide patterns can be formed by forming a metal oxide layer on the entire surface of the substrate by a method such as CVD, and then patterning this layer by photolithography.

Examples of the inorganic material forming the binding portion 4 include frit glass, silica, alumina and the like. In particular, the use of frit glass is preferred.

Such a binding inorganic material opposes an electrostatic attraction caused by a high voltage applied between the phosphor screen and a phosphor screen, which will be described later. Has sufficient adhesion to hold in. That is,
The presence of these binding inorganic materials allows the anodized portion 5 to be bound and integrated in the alumina binding layer 3 and is prevented from falling out of the layer.

It is desirable that the ratio of the binding inorganic material in the alumina binding layer 3 is 5 to 50% by weight. If the proportion of the binding inorganic material is less than 5% by weight, the anodized portion 5 of Al will fall off, and the withstand voltage characteristics are likely to deteriorate. 50
If the content is more than 10% by weight, electron emission (emission) characteristics deteriorate, which is not preferable.

As shown in the enlarged view of FIG. 3, the anodized part 5 of Al has a diameter extending in a substantially vertical direction and having a diameter of several nm to several tens.
It includes a porous alumina layer 8 having a large number of micropores (nanoholes) 8a of 0 nm, and a lower portion of the porous alumina layer 8 has an aluminum residual portion 9 remaining without being anodized. A barrier layer 10 made of alumina (aluminum oxide) is formed between the remaining aluminum portion 9 and the bottom end of the nanohole 8a.

In the inside of the nanohole 8a, Al,
A conductive layer 11 made of a conductor or semiconductor such as Au, Ag, Cu, Co, Fe, Cr, or Ni is formed.
These conductive layers 11 do not need to be filled without gaps inside the nanoholes 8a, as long as they can maintain conduction.
The conductive layer 11 can be formed by, for example, an electrochemical method, a CVD method, a vapor deposition method, or the like.

The second conductor layer 6 is formed in a predetermined pattern so as to be in electrical contact with the conductive layer 11. The pattern of the second conductor layer 6 is preferably different from the pattern of the first conductor layer 2 and the alumina binding layer 3 described above, and more preferably, the patterns of both are orthogonal (cross). I do. For example, the pattern of the first conductor layer 2 and the pattern of the second conductor layer 6 are respectively defined by two orthogonal axes (for example, an X axis and a Y axis).
It is desirable to form a stripe parallel to the (axis) direction.

As the conductive material forming the second conductive layer 6, a conductive metal such as Au, Al, or Ag can be used. The pattern can be formed, for example, by a method such as vapor deposition and sputtering using a mask having predetermined openings. Further, it can also be performed by a plating method.
Furthermore, the conductive layer 11 can be formed inside the nanohole 8a simultaneously with the formation of the second conductor layer 6 by using a method such as vapor deposition or sputtering.

According to this electron source device, the first conductor layer 2 is used as a reference electrode, and a voltage of several tens of volts is applied to the second conductor layer 6.
Is applied to the barrier layer 10 in the porous alumina layer 8 in the alumina binding layer 3 to generate electrons as a result of the application of the voltage (positive voltage). It is released outside through the layer 6. By forming the first conductor layer 2 and the second conductor layer 6 so as to be both striped and perpendicular to each other, the adjustment of the electron generation site and the control of the electron generation amount are performed well. be able to.

In the electron source device having such a structure, it is considered that the optimum value of the thickness of the barrier layer 10 in the porous alumina layer 8 depends on the electric field intensity applied to the barrier layer 10. The electric field strength is considered to be affected by various factors such as the resistance value of the conductive layer 11 formed in the nanohole 8a and the depth of the nanohole 8a. It is desirable that the thickness of the barrier layer 10 be 2 nm to 50 nm. When the thickness of the barrier layer 10 is less than 2 nm, electron emission (emission) hardly occurs. In addition, the barrier layer 10
When the thickness exceeds 50 nm, stable and good emission is hardly generated.

In the porous alumina layer 8, the depth of the nanoholes 8a is set to 50 nm to 30 μm. Further, the pore diameter is desirably 1 nm to 5000 nm, more preferably 5 nm to 1000 nm. The shallower the depth of the nanoholes 8a, the better the generation of emissions, but the lower the withstand voltage tends to be. On the other hand, if the hole diameter is too large, the concentration of the electric field is reduced, so that the emission generation efficiency is deteriorated. If the hole diameter is too small, it is difficult to form the holes and the conductive layer 11 inside, which is not preferable. Both the depth and the hole diameter of the nanohole 8a affect the electric field intensity applied to the barrier layer 10.

The thickness of the conductive layer 11 is 50 nm to 30 μm.
It is desirable that If the thickness of the conductive layer 11 is less than 50 nm, emission is good, but the withstand voltage is undesirably reduced. Conversely, if the thickness of the conductive layer 11 is 30
If it exceeds μm, it is difficult to obtain stable and good emission.

The thickness of the second conductor layer 6 is 5 nm to 30
Desirably, it is set to 0 nm. If the thickness of the second conductor layer 6 is less than 5 nm, it is difficult to secure stable and good conduction with the conduction layer 11 in the nanohole 8a. On the other hand, if it exceeds 300 nm, it is difficult for electrons to penetrate and be emitted.

The electron source device according to the first embodiment of the present invention
For example, it can be manufactured by the following method.

That is, first, a pattern of a first conductor layer 2 of Al or the like is formed on an insulating substrate 1 such as a glass substrate. As a method of forming the pattern, for example, a method of evaporating a metal such as Al through a mask having openings of a desired pattern can be employed.

Next, a conductive pattern mainly composed of Al powder and containing a binding inorganic material such as frit glass is printed on the pattern of the first conductive layer 2 to form a predetermined pattern. After that, the conductive paste layer is heated and fired. Thus, an aluminum binding layer in which the Al powder is integrally bound by the binding inorganic material is obtained.

Next, anodic oxidation is performed on the obtained aluminum binding layer. Al in the aluminum binding layer is anodized to form a porous alumina layer 8 having a large number of nanoholes 8a. The anodic oxidation time is controlled so that part of Al remains without being oxidized. Thus, the binding portion 4 made of a binding inorganic material,
The pattern of the alumina binding layer 3 in which the anodic oxidized portions 5 obtained by anodic oxidation of Al are uniformly mixed is formed.

Next, the nano holes 8 in the porous alumina layer 8 are formed.
a conductive layer 11 made of a metal such as Au or Al
Is formed by a method such as vapor deposition. In order to form the conductive layer 11 made of Ni or the like, the nanoholes 8a can be filled with Ni using an electrolytic deposition method.

After that, a pattern of the second conductor layer 6 made of Au or the like is deposited or sputtered on the pattern of the alumina binding layer 3 through a mask having openings of a desired pattern, for example. Formed by a method. By depositing the same conductive metal, the formation of the conductive layer 11 and the formation of the second conductive layer 6 can be performed simultaneously.

As described above, according to the first embodiment of the present invention, an electron source having a high electron emission capability, a long life and a high reliability can be obtained simply and inexpensively.

Next, an FED provided with such an electron source device of the first embodiment will be described with reference to the drawings.

As shown in FIG. 4, the FED includes a rear plate 12 and a face plate 13 each formed of a rectangular glass substrate, and these plates are arranged to face each other at a predetermined interval. And rear plate 1
2 and the face plate 13 are joined to each other via a rectangular frame-shaped side wall 14 made of glass at a peripheral end, thereby forming a vacuum envelope 15.

On the inner surface of the face plate 13, a phosphor screen 16 is formed. Phosphor screen 1
Reference numeral 6 denotes a structure in which three color phosphor layers of red (R), blue (B), and green (G) and a light absorbing layer made of a black pigment, which are formed in a stripe or a dot, are arranged side by side. . On the phosphor screen 16, a metal back layer 17 made of Al is formed as a third electrode (anode electrode). Note that a counter electrode (not shown) may be formed as a third electrode between the phosphor screen 16 and the face plate 13 and used as an anode electrode. As the counter electrode, a transparent electrode made of, for example, ITO is used.

Here, the light absorbing layer can be formed by photolithography or the like. The formation of the phosphor layers of three colors of red (R), blue (B) and green (G) is performed by using ZnS
System, a Y ₂ O ₃ system, a Y ₂ O ₂ S system or the like, and a slurry method using a phosphor liquid. The formation of the phosphor layer of each color can be performed by a spray method or a printing method, and in these methods, patterning by photolithography can be used in combination as needed.

On the inner surface of the rear plate 12, the electron source device 18 of the first embodiment is provided. The electron source device 18 emits a second electron beam (indicated by an arrow).
The conductive layer 6 is disposed facing the inside (toward the phosphor screen 16).

The side wall 14 is made of, for example, frit glass, and is made of a material such as frit glass.
The inside of a vacuum envelope 15 composed of the rear plate 12, the face plate 13, and the side wall 14 is substantially kept at a vacuum. further,
A number of spacers (not shown) are arranged at predetermined intervals between the rear plate 12 and the face plate 13 in order to maintain a gap between these plates. Each spacer is formed in a plate shape or a column shape.

According to such an FED, the electron source device 1
8, the pattern of the first conductive layer 2 formed in a stripe shape parallel to the X-axis, for example, is used as a reference electrode group.
A voltage is applied between the second electrode layer and the pattern of the second conductor layer 6 which is a second electrode group formed parallel to the axis. That is,
Each of the crossed patterns is selected as an electrode, and when a voltage is applied to the intersection of those electrodes, electrons are emitted through the second conductor layer 6.
Then, the emitted electrons are accelerated by the voltage (anode voltage) applied to the third electrode (metal back layer 17) provided on the phosphor screen 16 side, and collide with the phosphor layer. As a result of the electron collision, the phosphor is excited and emits light, and a desired image is displayed.

According to the embodiment of the present invention configured as described above, an inexpensive and long-life display device having a high luminous efficiency, a long life and a reliable electron source having a high electron emission capability is provided. Obtainable.

In the electron source device 18, the first conductive layer 2 serving as a reference electrode and the second conductive layer 6 serving as a second electrode are formed in a stripe shape and perpendicular to each other. Therefore, it is possible to adjust the electron generation site and control the amount of generated electrons.

Next, specific examples of the present invention will be described.

Example 1 A glass plate having a size of 10 cm × 10 cm was used as an insulating substrate, and one surface thereof was sufficiently washed with a surfactant and acetone, and then a 150 μm-width slit was formed thereon. Aluminum was deposited through a mask having a number of apertures. Thus, striped aluminum layers having a width of 150 μm and a thickness of 0.2 μm were formed on the glass plate at intervals of 50 μm along the X-axis direction.

Next, an aluminum (Al) paste having the following composition was prepared. Frit glass (PbO / SiO ₂ / B ₂ O ₃ / SnO ₂ ) 10 wt% Al powder 70 wt% Diethylene glycol monobutyl ether acetate 17 wt% Ethyl cellulose 3 wt%

Next, this Al paste is printed on the aluminum layer pattern using a screen printing machine, and a stripe pattern parallel to the X-axis direction (width 150 μm, thickness 20 μm, stripe interval 50 μm).
μm).

Next, the pattern of this Al paste layer was changed to 5
After heating at a temperature of 00 ° C. for 1 hour and firing, anodic oxidation was performed at a voltage of 20 V using sulfuric acid as an electrolyte. The anodizing time is controlled within a range in which the obtained aluminum anodized layer (porous alumina layer) has conductivity, that is, a range in which aluminum is not completely oxidized and a part of the aluminum base remains. did. Thus, a striped alumina binding layer was formed in the X-axis direction.

Then, gold (Au) was sputtered from above the pattern of the alumina binding layer through a mask having a large number of slit-like openings having a width of 150 μm, and a width of
A 50 μm striped Au layer (50 nm thick) is
An Au layer was formed in the nanoholes of the porous alumina layer while being formed at an interval of 0 μm to ensure conduction in the nanoholes. The pattern of the Au layer was formed in the Y-axis direction orthogonal to the pattern of the Al layer (the pattern of the alumina binding layer). In this manner, an electron is used in which the Al layer is used as the reference electrode (cathode electrode), the Au layer is used as the second electrode (gate electrode), and the barrier layer made of alumina formed below the nanoholes of the porous alumina layer is used as the electron emission portion. The source was obtained.

Next, a face plate having a phosphor screen was manufactured by the following procedure. First, 10cm
A × width 10cm glass substrate, after the formation of the lattice matrix-shaped light shielding layer mainly composed of graphs Fight by photolithography, the gap of the light-shielding layer, regularly arranged red (Y ₂ O ₂ S: Eu), green (ZnS: C)
u, Al) and blue (ZnS: Ag, Al) phosphor layers were formed by photolithography. Next, a film made of nitrocellulose was formed on the phosphor screen thus formed, and an aluminum layer was formed thereon as a metal back layer by vapor deposition to complete a phosphor screen.
This aluminum layer becomes an anode electrode which is a third electrode.

The thus obtained face plate and a substrate (rear plate) provided with the above-mentioned electron source were assembled in the following procedure. First, a hole was made at a desired position outside the image effective surface of the rear plate, and the exhaust pipe was joined with frit glass. Next, a glass frame for gap control is arranged on the rear plate, and the second electrode (gate electrode) of the electron source and the third electrode (metal back layer) of the phosphor screen face each other on the glass frame. A face plate was placed. Then, after positioning was performed so that the individual electron emission sites of the electron source corresponded to the pixels of the phosphor screen, they were joined by frit glass. At this time, the gap between the gate electrode of the electron source and the third electrode on the phosphor screen is 2 m over the entire surface.
The glass frame was controlled so as to be m. Then 300
Exhaust with an exhaust pipe while heating at 1 ° C.
^{When the} pressure became ^{−3 to} 5 × 10 ⁻³ Pa, the exhaust pipe was sealed. By the above procedure, a display device of 10 cm × 10 cm was manufactured.

FIG. 5 schematically shows the display device thus obtained. In this figure, reference numeral 19 denotes a face plate, 20 denotes a phosphor screen, 21 denotes a metal back layer as a third electrode, 22 denotes a rear plate, 23 denotes an Al layer as a reference electrode of an electron source, and 24 denotes a second electrode. An Au layer which is an electrode (gate electrode) is shown.

In such a display device, the voltage (Va) of the third electrode is set to 8 kv and the first electrode (reference electrode)
By applying a voltage (Vd) of 0 to 50 V according to a signal between the group and the second electrode (gate electrode) group and observing the light emitting state of the phosphor layer, the electron emission (emission) start voltage is obtained. And the dielectric breakdown voltage were measured.

In the display device of Example 1, emission of electrons started at a low voltage (Vd) as low as 4 V, and a favorable light emitting state was obtained. In addition, the dielectric breakdown voltage was high, and the withstand voltage was satisfactory. Then, no discharge caused by dropping of the aluminum powder and alumina was observed.

Example 2 An Al paste having the following composition was prepared. Frit glass (PbO / SiO ₂ / B ₂ O ₃ / SnO ₂ ) 15 wt% Aluminum (Al) powder 65 wt% Diethylene glycol monobutyl ether acetate 17 wt% Ethyl cellulose 3 wt%

Using the Al paste thus obtained,
An electron source was manufactured in the same manner as in Example 1, and a display device was completed in the same manner as in Example 1 using the electron source.

Next, the electron emission start voltage and the breakdown voltage of the obtained display device were measured. In the display device of Example 2, electron emission started at a sufficiently low voltage, and a favorable light emitting state was obtained. In addition, the withstand voltage was 15 kV and
It was found that the adhesive strength of the porous alumina by the binder was improved and the alumina and aluminum powder were prevented from falling off.

The present invention is not limited to the above-described embodiment, but can be variously modified within the scope of the present invention. For example, the material to be used is not limited to the above-described embodiment, but can be variously selected as needed. Further, the present invention is not limited to the FED, but is applicable to other flat panel display devices.

[0067]

As is apparent from the above description, according to the present invention, an electron source having a high electron emission ability and a long life is provided.
A bright and highly reliable display device can be obtained easily and inexpensively.

In addition, since an electron source having ultrafine units and excellent uniformity is provided, and more than several thousand unit electron sources correspond to one picture element, a highly efficient and highly reliable display is realized. can do.

[Brief description of the drawings]

FIG. 1 is a sectional view showing the structure of an electron source device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing another embodiment of the electron source device.

FIG. 3 is an enlarged cross-sectional view showing an anodized portion of Al in the first embodiment.

FIG. 4 is a sectional view schematically showing the structure of an FED according to an embodiment of the present invention.

FIG. 5 is a diagram schematically showing a display device obtained in an example of the present invention.

[Explanation of symbols]

1 ... insulating substrate, 2 ... first conductor layer, 3 ...
Alumina binding layer, 4 binding section made of binding inorganic material, 5 anodized section, 6 second conductive layer,
7 ... insulator layer, 8a ... nanohole, 8 ... porous alumina layer, 9 ... aluminum residual part, 10 ...
... barrier layer, 11 ... conductive layer, 12 ... rear plate, 13 ... face plate, 14 ... side wall,
16 phosphor screen, 17 metal back layer

   ────────────────────────────────────────────────── ─── Continuation of front page    (72) Inventor Tanaka Hajime             1-9-9 Hara-cho, Fukaya-shi, Saitama 2 shares             Toshiba Fukaya Factory (72) Inventor Go Koyanatsu             1-9-9 Hara-cho, Fukaya-shi, Saitama 2 shares             Toshiba Fukaya Factory F term (reference) 5C031 DD17 DD19                 5C036 EE01 EE14 EE19                 5C127 AA01 BA09 CC18 DD78 EE08                       EE15 EE17                 5C135 AA09 AB18 CC01 CC09 HH04                       HH07 HH08 HH15 HH17

Claims (11)

[Claims] A first conductive layer formed on an insulating substrate; and a plurality of fine holes formed by anodic oxidation of aluminum, the first conductive layer being formed on the first conductive layer. An alumina binding layer including a porous alumina having a binding inorganic material and further having an aluminum residual portion; a conductive layer formed of a conductor or a semiconductor formed in the micropores of the porous alumina; A second conductor layer formed in electrical contact with the conductive layer on the binding layer, wherein in the alumina binding layer, the bottom end of the micropores and the aluminum residual portion are formed. An electron source device, wherein electrons are emitted by a voltage separated between a barrier layer made of alumina and applied between the first conductor layer and the second conductor layer. 2. The electron source device according to claim 1, wherein the binding inorganic material is frit glass. 3. The method according to claim 1, wherein the alumina binding layer has a predetermined pattern, and the second conductor layer has a pattern different from the pattern of the alumina binding layer. Electron source device. 4. The electron source device according to claim 3, wherein an insulator layer is formed between the patterns of the alumina binding layer. 5. A step of forming a first conductive layer on an insulating substrate; and a conductive paste containing aluminum powder as a main component and a binding inorganic material on the first conductive layer. Forming an aluminum binding layer; heating and firing the conductive paste layer to form an aluminum binding layer; anodizing the aluminum binding layer to form a porous alumina having a large number of fine pores. Anodizing step of forming an alumina binding layer containing an adhesive inorganic material, forming a conductive layer made of a conductor or a semiconductor in the micropores of the porous alumina, and on the alumina binding layer, Forming a second conductor layer that is in electrical contact with the conductive layer; and anodizing the aluminum binding layer,
A method of manufacturing an electron source device, comprising: leaving a portion of aluminum without being oxidized; and forming a barrier layer made of alumina between the remaining portion of aluminum and the bottom end of the fine pores of porous alumina. Method. 6. The method according to claim 5, wherein the binding inorganic material is frit glass. 7. The method according to claim 5, wherein the conductive paste layer is formed in a predetermined pattern. 8. The method according to claim 7, wherein the second conductive layer is formed in a pattern different from a pattern of the conductive paste layer. 9. An insulating layer for separating the pattern of the conductive paste layer between a step of forming the conductive paste layer in a predetermined pattern and a step of forming the second conductive layer. The method for manufacturing an electron source device according to claim 7, further comprising a step of forming. 10. A first substrate and a second substrate disposed to face each other, a phosphor layer provided on an inner surface of the first substrate, and a phosphor layer provided on an inner surface of the second substrate. And an electron source that emits electrons that excite the phosphor layer. The electron source is the electron source device according to claim 1. Display device. 11. The display device according to claim 10, wherein a third electrode is provided on a side opposite to the first conductor layer with the second conductor layer interposed therebetween. .