JP3944415B2 - ELECTRONIC SOURCE DEVICE, ITS MANUFACTURING METHOD, AND DISPLAY DEVICE - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electron source device, a method for manufacturing the electron source device, and a display device.
[0002]
[Prior art]
In recent years, a field emission display (hereinafter referred to as FED) has been developed as a flat image display device. This FED has a face plate and a rear plate which are arranged to face each other with a predetermined gap, and three color phosphor layers are formed on the inner surface of the face plate, and these fluorescent materials are formed on the inner surface of the rear plate. An electron emission source that emits electrons that excite the body is provided.
[0003]
Conventionally, a structure called a spindle type has been proposed as an electron emission source of an FED. This electron emission source has a structure in which an electric field is concentrated on a sharp portion of an electron emission portion formed of Mo, and electrons are emitted from the electron emission portion by a voltage applied to the phosphor layer to cause the phosphor to emit light. is doing. By this method, a thin flat display device is realized.
[0004]
[Problems to be solved by the invention]
However, the above-described electron emission source has a very fine structure, and it has been extremely difficult to form a large number uniformly and simply. Therefore, it is difficult to make a large flat display device using such an electron emission source, and there is a problem that a manufacturing cost increases even if the flat display device has a small screen. In addition, since a difference in electron emission capability occurs due to a slight difference in shape of the electron emission source, it is difficult to obtain a stable image.
[0005]
Recently, a structure has been proposed in which carbon nanotubes (CN) are formed in very fine pores (nanoholes) with a diameter of several nanometers to several hundreds of nanometers, which are obtained by anodic oxidation of aluminum (Al), and used as an electron emission source. (See Displays 21 (2000) P99-104).
[0006]
However, in the electron emission source having such a structure, not only is CN expensive, but if the degree of vacuum in the tube is low, the gas in the tube contaminates the CN and the life is shortened. There was a problem.
[0007]
The present invention has been made to solve these problems, and has a high electron emission capability and a long lifetime even at a low vacuum, and a method for manufacturing such an electron source device extremely inexpensively and simply. Another object of the present invention is to provide a display device with high luminous efficiency, low cost, and high reliability.
[0008]
[Means for Solving the Problems]
An electron source device according to the present invention includes a first conductor layer formed on an insulating substrate and a layer formed on the first conductor layer, and is obtained by anodization of aluminum. Porous alumina having fine pores of At least one selected from frit glass, silica and alumina An alumina binding layer containing a binding inorganic material and further having an aluminum residual portion, a conductive layer made of a conductor or a semiconductor formed in the micropores of the porous alumina, and an upper surface of the alumina binding layer A second conductive layer formed in electrical contact with the conductive layer, and a barrier layer in which the bottom end portion of the fine hole and the aluminum residual portion are made of alumina in the alumina binding layer. And electrons are emitted by a voltage applied between the first conductor layer and the second conductor layer.
[0009]
In this electron source device, the binding inorganic material can be frit glass. The alumina binder layer may have a predetermined pattern, and the second conductor layer may have a pattern different from the pattern of the alumina binder layer. Furthermore, it can be set as the structure where the insulator layer was formed between the patterns of the alumina binder layer.
[0010]
The method of manufacturing an electron source device according to the present invention includes a step of forming a first conductor layer on an insulating substrate, and an aluminum powder as a main component on the first conductor layer. At least one selected from frit glass, silica and alumina A step of forming a conductive paste layer containing a binding inorganic material, a step of heating and baking the conductive paste layer to form an aluminum binding layer, an anodizing of the aluminum binding layer, Porous alumina with a large number of micropores; Said An anodic oxidation step of forming an alumina binding layer containing a binding inorganic material, a step of forming a conductive layer made of a conductor or a semiconductor in the micropores of the porous alumina, and on the alumina binding layer And a step of forming a second conductor layer in electrical contact with the conductive layer, wherein in the step of anodizing the aluminum binder layer, a part of aluminum is left without being oxidized, and the aluminum residue A barrier layer made of alumina is formed between the portion and the bottom end of the fine pores of the porous alumina.
[0011]
In this method of manufacturing an electron source device, the binding inorganic material can be frit glass. Further, the conductive paste layer can be formed in a predetermined pattern. Furthermore, the conductive paste layer can be formed in a predetermined pattern, and the second conductor layer can be formed in a pattern different from the pattern of the conductive paste layer.
[0012]
Furthermore, a step of forming an insulator layer separating the pattern of the conductive paste layer between the step of forming the conductive paste layer in a predetermined pattern and the step of forming the second conductor layer. Can have.
[0013]
A display device according to the present invention includes a first substrate and a second substrate disposed to face each other, a phosphor layer provided on an inner surface of the first substrate, and an inner surface side of the second substrate. Provided with an electron source that emits electrons that excite the phosphor layer, and the electron source is the above-described electron source device.
[0014]
In this display device, the third electrode can be provided on the opposite side of the alumina binder layer with the second conductor layer interposed therebetween.
[0015]
In the electron source device of the present invention, a conductive layer is formed inside the micropores of the porous alumina (aluminum oxide) layer obtained by anodizing aluminum, and the bottom end of the micropores and the anode A barrier layer made of alumina is provided between the aluminum base portion remaining without being oxidized, and this barrier layer becomes an electron tunnel barrier layer.
[0016]
Then, by applying a voltage between the second conductor layer formed so as to be in electrical contact with the conductive layer and the first conductor layer electrically connected to the aluminum base portion described above, Since the electric field concentrates on the barrier layer and electrons are emitted, a uniform electron source with high electron emission capability can be obtained. In addition, since direct contact between the electron emission portion and the atmospheric gas is avoided, the deterioration due to contamination of the electron emission portion hardly occurs and a long-life display device is realized.
[0017]
Furthermore, a conductive paste containing an aluminum powder and a binding inorganic material is applied by a method such as printing, and then the coating layer is heated and baked, and then anodized to perform a binding process including porous alumina. Since the deposition layer can be formed in a predetermined pattern, an electron source device can be obtained very easily and inexpensively.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described with reference to the drawings.
[0019]
As shown in FIG. 1, an electron source device according to a first embodiment of the present invention includes a first conductor layer 2 formed in a predetermined pattern on an insulating substrate 1 such as a glass substrate of a rear plate. An alumina binder layer 3 having the same pattern is formed on the conductor layer 2. The alumina binding layer 3 has a structure in which a binding portion 4 made of a binding inorganic material and an anodized portion 5 obtained by anodizing aluminum are uniformly mixed. A pattern of the second conductor layer 6 is formed on the alumina binder layer 3.
[0020]
The first conductor layer 2 can also be formed on the entire surface of the insulating substrate 1 without patterning. It is also possible to form the alumina binder layer 3 in a pattern different from that of the lower first conductor layer 2. Further, in order to reliably insulate / separate each pattern portion of the alumina binder layer 3, an insulating substrate pattern is formed between the patterns of the alumina binder layer 3 on the insulating substrate 1 as shown in FIG. 2. be able to. As an insulating material constituting such an insulating layer 7, for example, silica (SiO 2 ₂ Insulating oxides such as In addition, in FIG. 2, illustration of the 1st conductor layer 2 is abbreviate | omitted.
[0021]
Examples of the material for forming the first conductor layer 2 include conductive metals such as Al, Au, and Ag.
[0022]
In order to form these metal patterns, (1) a method of vapor-depositing these metals through a mask having a hole having a desired pattern, or (2) a metal layer is vapor-deposited on the entire surface of the insulating substrate. After forming by a method such as sputtering or plating, a resist layer having a desired pattern can be formed on the metal layer by photolithography, and then the metal layer can be etched and removed with an acid or the like. .
[0023]
ITO and SnO ₂ Conductive metal oxides such as can also be used. These metal oxide patterns can be formed by forming a metal oxide layer on the entire surface of the substrate by a method such as CVD and then patterning the layer by photolithography.
[0024]
Examples of the inorganic material constituting the binding portion 4 include frit glass, silica, and alumina. In particular, the use of frit glass is preferred.
[0025]
Such a binding inorganic material holds the anodized portion 5 of Al in the alumina binding layer 3 against an electrostatic attraction caused by a high voltage applied between the phosphor screen described later. It has a sufficient adhesion force. That is, the presence of these binding inorganic materials causes the anodized portion 5 to be bound and integrated into the alumina binding layer 3 and to prevent the layer from falling out of the layer.
[0026]
The proportion of the binding inorganic material in the alumina binding layer 3 is desirably 5 to 50% by weight. When the proportion of the binding inorganic material is less than 5% by weight, the anodized portion 5 of Al is removed, and the withstand voltage characteristic is likely to deteriorate. If it exceeds 50% by weight, the electron emission (emission) characteristics deteriorate, which is not preferable.
[0027]
As shown in an enlarged view in FIG. 3, the anodized portion 5 of Al includes a porous alumina layer 8 having a large number of fine holes (nanoholes) 8a having a diameter of several nanometers to several hundred nanometers extending in a substantially vertical direction. Below the porous alumina layer 8, there is an aluminum residual portion 9 that remains without being anodized. A barrier layer 10 made of alumina (aluminum oxide) is formed between the remaining aluminum portion 9 and the bottom end portion of the nanohole 8a.
[0028]
In addition, a conductive layer 11 made of a conductor such as Al, Au, Ag, Cu, Co, Fe, Cr, or Ni or a semiconductor is formed inside the nanohole 8a. These conductive layers 11 do not need to be filled in the nanoholes 8a without any gap, and it is only necessary to ensure conduction. The conductive layer 11 can be formed, for example, by an electrochemical method, a CVD method, a vapor deposition method, or the like.
[0029]
The second conductor layer 6 is formed in a predetermined pattern so as to be in electrical contact with the conductive layer 11. The pattern of the second conductor layer 6 is preferably different from the pattern of the first conductor layer 2 and the alumina binder layer 3, and more preferably formed so that the patterns of both are orthogonal (cross). To do. For example, it is desirable that the pattern of the first conductor layer 2 and the pattern of the second conductor layer 6 are formed in a stripe shape parallel to two orthogonal axes (for example, the X axis and the Y axis). .
[0030]
Examples of the conductive material constituting the second conductor layer 6 include conductive metals such as Au, Al, and Ag. The pattern can be formed by, for example, vapor deposition or sputtering using a mask having a predetermined opening. It can also be performed by a plating method. Further, the conductive layer 11 can be formed inside the nanohole 8a simultaneously with the formation of the second conductor layer 6 by using a method such as vapor deposition or sputtering.
[0031]
According to this electron source device, the alumina binder layer 3 is obtained by applying a voltage (positive voltage) of several tens of volts between the first conductor layer 2 as a reference electrode and the second conductor layer 6. As a result of the electric field being concentrated on the barrier layer 10 in the porous alumina layer 8, electrons are generated, and the generated electrons are emitted through the second conductor layer 6. Then, by forming the first conductor layer 2 and the second conductor layer 6 so as to be both striped and orthogonal to each other, the adjustment of the electron generation site and the control of the amount of electron generation are performed satisfactorily. be able to.
[0032]
In the electron source device having such a structure, the optimum value of the thickness of the barrier layer 10 in the porous alumina layer 8 is considered to depend on the electric field strength applied to the barrier layer 10. The electric field strength is considered to be affected by various factors such as the resistance value of the conductive layer 11 formed in the nanohole 8a and the depth of the nanohole 8a. The thickness of the barrier layer 10 is desirably 2 nm to 50 nm. If the thickness of the barrier layer 10 is less than 2 nm, electron emission (emission) hardly occurs. Moreover, even if the thickness of the barrier layer 10 exceeds 50 nm, stable good emission is less likely to occur.
[0033]
In the porous alumina layer 8, the depth of the nanohole 8a is 50 nm to 30 μm. The pore diameter is preferably 1 nm to 5000 nm, more preferably 5 to 1000 nm. The shallower the nanohole 8a, the better the emission, but the voltage resistance tends to deteriorate. On the other hand, if the hole diameter is too large, the electric field concentration is reduced, so that the emission generation efficiency is deteriorated. If the hole diameter is too small, formation of the hole and formation of the conductive layer 11 inside becomes difficult. Both the depth and the hole diameter of the nanohole 8a affect the electric field strength applied to the barrier layer 10.
[0034]
The thickness of the conductive layer 11 is desirably 50 nm to 30 μm. When the thickness of the conductive layer 11 is less than 50 nm, the emission is good, but the voltage resistance is lowered, which is not preferable. On the other hand, when the thickness of the conductive layer 11 exceeds 30 μm, it is difficult to obtain stable and good emission.
[0035]
The thickness of the second conductor layer 6 is desirably 5 nm to 300 nm. When the thickness of the second conductor layer 6 is less than 5 nm, it is difficult to ensure stable and good conduction with the conduction layer 11 in the nanohole 8a. On the contrary, if it exceeds 300 nm, it becomes difficult for electrons to penetrate and be emitted.
[0036]
The electron source device according to the first embodiment of the present invention can be manufactured, for example, by the following method.
[0037]
That is, first, a pattern of a first conductor layer 2 such as Al is formed on an insulating substrate 1 such as a glass substrate. As a pattern forming method, for example, a method of depositing a metal such as Al through a mask having openings having a desired pattern can be adopted.
[0038]
Next, on the pattern of the first conductor layer 2, a conductive paste containing a binder inorganic material such as frit glass mainly composed of Al powder is printed to form a predetermined pattern. The conductive paste layer is heated and fired. Thus, an aluminum binding layer in which the Al powder is integrally bound with the binding inorganic material is obtained.
[0039]
Next, anodization is performed on the obtained aluminum binder layer. Al in the aluminum binder layer is anodized to form a porous alumina layer 8 having a large number of nanoholes 8a. The anodic oxidation time is controlled so that a part of Al remains without being oxidized. In this manner, a pattern of the alumina binding layer 3 is formed in which the binding portion 4 made of a binding inorganic material and the anodized portion 5 obtained by anodizing Al are uniformly mixed.
[0040]
Next, a conductive layer 11 made of a metal such as Au or Al is formed inside the nanohole 8a of the porous alumina layer 8 by a method such as vapor deposition. In order to form the conductive layer 11 made of Ni or the like, the nanoholes 8a can be filled with Ni by electrolytic deposition.
[0041]
Thereafter, a pattern of the second conductor layer 6 made of Au or the like is formed on the pattern of the alumina binder layer 3 by a method such as vapor deposition or sputtering through a mask having a desired pattern of openings. To do. By depositing the same conductive metal, it is possible to simultaneously form the conductive layer 11 and the second conductive layer 6.
[0042]
As described above, according to the first embodiment of the present invention, an electron source having a high electron emission capability, a long lifetime, and high reliability can be obtained simply and inexpensively.
[0043]
Next, an FED equipped with such an electron source device according to the first embodiment will be described with reference to the drawings.
[0044]
As shown in FIG. 4, the FED includes a rear plate 12 and a face plate 13 each made of a rectangular glass substrate, and these plates are arranged to face each other at a predetermined interval. The rear plate 12 and the face plate 13 are joined to each other via a rectangular frame-shaped side wall 14 whose peripheral ends are made of glass to form a vacuum envelope 15.
[0045]
A phosphor screen 16 is formed on the inner surface of the face plate 13. The phosphor screen 16 is configured by arranging a phosphor layer of three colors of red (R), blue (B), and green (G) formed in a stripe shape or a dot shape and a light absorption layer composed of a black pigment. Has been. A metal back layer 17 made of Al is formed on the phosphor screen 16 as a third electrode (anode electrode). A counter electrode (not shown) may be formed as a third electrode between the phosphor screen 16 and the face plate 13, and this may be used as an anode electrode. As the counter electrode, for example, a transparent electrode made of ITO is used.
[0046]
Here, the light absorption layer can be formed by photolithography or the like. In addition, the formation of phosphor layers of three colors of red (R), blue (B), and green (G) is based on ZnS, Y ₂ O ₃ Series, Y ₂ O ₂ It can be performed by a slurry method using a phosphor liquid such as S-based. In addition, formation of the phosphor layer of each color can also be performed by a spray method or a printing method, and also in these methods, patterning by photolithography can be used together as necessary.
[0047]
The electron source device 18 of the first embodiment is provided on the inner surface of the rear plate 12. The electron source device 18 is arranged with the second conductor layer 6 that emits an electron beam (indicated by an arrow) facing inward (phosphor screen 16 side).
[0048]
The side wall 14 is sealed to the peripheral edge of the rear plate 12 and the peripheral edge of the face plate 13 by frit glass, for example, and the inside of the vacuum envelope 15 composed of the rear plate 12, the face plate 13 and the side wall 14 is , Almost kept in vacuum. Further, a large number of spacers (not shown) are arranged between the rear plate 12 and the face plate 13 at a predetermined interval in order to maintain a gap between these plates. The spacers are each formed in a plate shape or a column shape.
[0049]
According to such an FED, in the electron source device 18, for example, the pattern of the first conductor layer 2 formed in a stripe shape parallel to the X axis is used as the reference electrode group, and the first electrode is formed parallel to the Y axis. A voltage is applied between the second electrode group and the pattern of the second conductor layer 6. That is, each crossed pattern is selected as an electrode, and a voltage is applied to the intersection of these electrodes, so that electrons are emitted through the second conductor layer 6. The emitted electrons are accelerated by the voltage (anode voltage) applied to the third electrode (metal back layer 17) provided on the phosphor screen 16 side, and collide with the phosphor layer. As a result of the collision of electrons, the phosphor is excited to emit light, and a desired image is displayed.
[0050]
According to the embodiment of the present invention configured as described above, an electron source having a high electron emission capability, a long lifetime, and a high reliability can be provided, and a display device having a high luminous efficiency, a low cost, and a long lifetime can be obtained. it can.
[0051]
Further, in the electron source device 18, the first conductive layer body layer 2 that is a reference electrode and the second conductive layer 6 that is a second electrode are formed in stripes and orthogonal to each other. Therefore, adjustment of the electron generation site and control of the amount of generated electrons are possible.
[0052]
Next, specific examples of the present invention will be described.
[0053]
Example 1
As an insulating substrate, a glass plate measuring 10 cm in length and 10 cm in width is used, and after thoroughly cleaning one side with a surfactant and acetone, a number of slit-shaped openings having a width of 150 μm are formed on the glass plate. Aluminum was deposited through a mask. Thus, striped aluminum layers having a width of 150 μm and a thickness of 0.2 μm were formed on the glass plate at intervals of 50 μm along the X-axis direction.
[0054]
Next, an aluminum (Al) paste having the following composition was prepared.
Frit glass (PbO / SiO ₂ / B ₂ O ₃ / SnO ₂ ) 10wt%
Al powder 70wt%
Diethylene glycol monobutyl ether acetate 17wt%
Ethylcellulose 3wt%
[0055]
Next, this Al paste is printed on the aluminum layer pattern using a screen printer to form a stripe pattern (width 150 μm, thickness 20 μm, stripe spacing 50 μm) parallel to the X-axis direction. did.
[0056]
Next, this Al paste layer pattern was heated at a temperature of 500 ° C. for 1 hour and baked, and then anodization was performed at a voltage of 20 V using sulfuric acid as an electrolyte. The anodic oxidation time is controlled within the range where conductivity is recognized in the obtained aluminum anodic oxidation layer (porous alumina layer), that is, the aluminum is not completely oxidized and a part of the aluminum base part remains. did. Thus, a striped alumina binder layer was formed in the X-axis direction.
[0057]
Next, gold (Au) is sputtered from above the alumina binder layer pattern through a mask having a large number of slit-shaped openings having a width of 150 μm, and a stripe-shaped Au layer having a width of 150 μm (thickness 50 nm). Were formed at intervals of 50 μm, and an Au layer was formed in the nanoholes of the porous alumina layer to ensure conduction in the nanoholes. The Au layer pattern was formed in the Y-axis direction orthogonal to the Al layer pattern (alumina binder layer pattern). Thus, the Al layer is used as the reference electrode (cathode electrode), the Au layer is used as the second electrode (gate electrode), and the barrier layer made of alumina formed below the nanoholes in the porous alumina layer is used as the electron emission portion. The source was obtained.
[0058]
Next, a face plate having a phosphor screen was produced by the following procedure. First, a lattice matrix-shaped light shielding layer mainly composed of graphite is formed by photolithography on a glass substrate having a length of 10 cm and a width of 10 cm, and then red (Y) regularly arranged in a gap portion of the light shielding layer. ₂ O ₂ Phosphor layers of S: Eu), green (ZnS: Cu, Al), and blue (ZnS: Ag, Al) were formed by photolithography. Next, a film made of nitrocellulose was formed on the phosphor screen thus formed, and an aluminum layer was formed thereon as a metal back layer by vapor deposition, thereby completing a phosphor screen. This aluminum layer becomes an anode electrode which is a third electrode.
[0059]
The face plate thus obtained and the substrate (rear plate) provided with the electron source described above were assembled in the following procedure. First, a hole was made at a desired position outside the image effective surface of the rear plate, and the exhaust pipe was joined with frit glass. Next, a glass frame for gap control is arranged on the rear plate, and the second electrode (gate electrode) of the electron source and the third electrode (metal back layer) of the phosphor screen face each other. A face plate was placed. And after aligning so that each electron emission site | part of an electron source might correspond to the pixel of a phosphor screen, it joined by frit glass. At this time, the glass frame was controlled so that the gap between the gate electrode of the electron source and the third electrode of the phosphor screen was 2 mm over the entire surface. Next, exhaust is performed through the exhaust pipe while heating at 300 ° C., and 1 × 10 ^-3 ~ 5x10 ^-3 When the pressure reached Pa, the exhaust pipe was sealed. A 10 cm × 10 cm display device was manufactured by the above procedure.
[0060]
The display device thus obtained is schematically shown in FIG. In this figure, reference numeral 19 is a face plate, 20 is a phosphor screen, 21 is a metal back layer that is a third electrode, 22 is a rear plate, 23 is an Al layer that is a reference electrode of an electron source, and 24 is a second plate. An Au layer which is an electrode (gate electrode) is shown.
[0061]
In such a display device, the voltage (Va) of the third electrode is 8 kv, and 0 to 50 V corresponding to the signal between the first electrode (reference electrode) group and the second electrode (gate electrode) group. The voltage (Vd) was applied and the emission state of the phosphor layer was observed to measure the electron emission (emission) start voltage and the dielectric breakdown voltage.
[0062]
In the display device of Example 1, emission of electrons started at a voltage (Vd) as low as 4 V, and a good light emission state was obtained. Further, the dielectric breakdown voltage was high, and the voltage resistance was satisfactory. And the discharge resulting from dropping of aluminum powder and alumina was not recognized.
[0063]
Example 2
An Al paste having the following composition was prepared.
Frit glass (PbO / SiO ₂ / B ₂ O ₃ / SnO ₂ ) 15wt%
Aluminum (Al) powder 65wt%
Diethylene glycol monobutyl ether acetate 17wt%
Ethylcellulose 3wt%
[0064]
Using the Al paste thus obtained, an electron source was produced in the same manner as in Example 1, and a display device was completed in the same manner as in Example 1 using the electron source.
[0065]
Subsequently, the electron emission start voltage and the dielectric breakdown voltage of the obtained display device were measured. In the display device of Example 2, electron emission started at a sufficiently low voltage, and a good light emission state was obtained. In addition, it was found that the withstand voltage was 15 kV, which was higher than that of the display device of Example 1, the adhesion of porous alumina by the binder was improved, and the alumina and aluminum powder were prevented from falling off.
[0066]
The present invention is not limited to the above-described embodiment, and various modifications can be made within the scope of the present invention. For example, the material to be used is not limited to the above-described embodiment, and can be variously selected as necessary. Further, the present invention is not limited to the FED but can be applied to other flat display devices.
[0067]
【The invention's effect】
As is apparent from the above description, according to the present invention, a bright and reliable display device having an electron emission capability and a long-life electron source can be obtained simply and inexpensively.
[0068]
In addition, an electron source with ultra-fine units and excellent uniformity is provided, and thousands or more unit electron sources correspond to one picture element, so that highly efficient and reliable display can be realized. it can.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing the structure of an electron source device according to a first embodiment of the present invention.
FIG. 2 is a cross-sectional view showing another embodiment of the electron source device.
FIG. 3 is an enlarged cross-sectional view showing an anodized portion of Al in the first embodiment.
FIG. 4 is a cross-sectional view schematically showing the structure of an FED according to an embodiment of the present invention.
FIG. 5 is a diagram schematically showing a display device obtained in an example of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ......... Insulating substrate, 2 ......... 1st conductor layer, 3 ......... Alumina binder layer, 4 ...... Binder part which consists of a binding inorganic material, 5 ......... Anodic oxidation part , 6 ......... second conductor layer, 7 ......... insulator layer, 8a ......... nanohole, 8 ......... porous alumina layer, 9 ......... aluminum residue, 10 ......... barrier layer, 11 ......... Conductive layer, 12 ......... Rear plate, 13 ......... Face plate, 14 ......... Sidewall, 16 ...... Phosphor screen, 17 ......... Metal back layer

Claims (11)

A first conductor layer formed on an insulating substrate;
It is a layer formed on the first conductor layer, and is formed of porous alumina having a large number of micropores obtained by anodization of aluminum, and at least one kind selected from frit glass, silica, and alumina. An alumina binder layer containing an adhesive inorganic material and further having an aluminum residual portion;
A conductive layer made of a conductor or a semiconductor formed in the micropores of the porous alumina;
A second conductor layer formed on the alumina binder layer in electrical contact with the conductive layer;
In the alumina binder layer, the bottom end portion of the fine hole and the aluminum residual portion are separated by a barrier layer made of alumina, and between the first conductor layer and the second conductor layer. Electrons are emitted by a voltage applied to the electron source device.   2. The electron source device according to claim 1, wherein the binding inorganic material is frit glass.   3. The electron source device according to claim 1, wherein the alumina binder layer has a predetermined pattern, and the second conductor layer has a pattern different from the pattern of the alumina binder layer.   4. The electron source device according to claim 3, wherein an insulator layer is formed between the patterns of the alumina binder layer. Forming a first conductor layer on an insulating substrate;
Forming a conductive paste layer on the first conductor layer, the main component of which is an aluminum powder and containing at least one binder inorganic material selected from frit glass, silica, and alumina ;
Heating and baking the conductive paste layer to form an aluminum binder layer;
The aluminum binder layer by anodizing, the anodizing process for forming an alumina binder layer comprising a porous alumina the binder of the inorganic material having a plurality of micropores,
Forming a conductive layer made of a conductor or semiconductor in the micropores of the porous alumina;
Forming a second conductor layer in electrical contact with the conductive layer on the alumina binder layer;
In the step of anodizing the aluminum binder layer, a part of the aluminum is left without being oxidized, and a barrier layer made of alumina is provided between the aluminum residue and the bottom end of the fine pores of the porous alumina. A method of manufacturing an electron source device, comprising: forming an electron source device.   6. The method of manufacturing an electron source device according to claim 5, wherein the binding inorganic material is frit glass.   7. The method of manufacturing an electron source device according to claim 5, wherein the conductive paste layer is formed in a predetermined pattern.   8. The method of manufacturing an electron source device according to claim 7, wherein the second conductor layer is formed in a pattern different from the pattern of the conductive paste layer.   A step of forming an insulating layer separating the pattern of the conductive paste layer between the step of forming the conductive paste layer in a predetermined pattern and the step of forming the second conductive layer; The method of manufacturing an electron source device according to claim 7. A first substrate and a second substrate disposed opposite to each other; a phosphor layer provided on an inner surface of the first substrate; and an inner surface side of the second substrate, the phosphor layer An electron source that emits electrons that excite
The display device according to claim 1, wherein the electron source is the electron source device according to claim 1.   The display device according to claim 10, wherein a third electrode is provided on a side opposite to the first conductor layer with the second conductor layer interposed therebetween.

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