JP2003336050A5 - - Google Patents

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JP2003336050A5
JP2003336050A5 JP2002148555A JP2002148555A JP2003336050A5 JP 2003336050 A5 JP2003336050 A5 JP 2003336050A5 JP 2002148555 A JP2002148555 A JP 2002148555A JP 2002148555 A JP2002148555 A JP 2002148555A JP 2003336050 A5 JP2003336050 A5 JP 2003336050A5
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Prior art keywords
phosphor
emission spectrum
silicon nitride
light
amount
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JP2002148555A
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Japanese (ja)
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JP2003336050A (en
JP4221950B2 (en
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Priority claimed from JP2002148555A external-priority patent/JP4221950B2/en
Priority to JP2002148555A priority Critical patent/JP4221950B2/en
Priority to SG200600830-4A priority patent/SG155768A1/en
Priority to CNB038004542A priority patent/CN100430456C/en
Priority to CA2447288A priority patent/CA2447288C/en
Priority to SG2009037094A priority patent/SG185827A1/en
Priority to KR1020097013179A priority patent/KR100983193B1/en
Priority to AU2003221442A priority patent/AU2003221442A1/en
Priority to EP03710450.2A priority patent/EP1433831B1/en
Priority to KR1020097013180A priority patent/KR100961342B1/en
Priority to SG2009037052A priority patent/SG173925A1/en
Priority to KR1020037015150A priority patent/KR100961324B1/en
Priority to US10/478,598 priority patent/US7258816B2/en
Priority to PCT/JP2003/003418 priority patent/WO2003080764A1/en
Priority to KR1020097013178A priority patent/KR100961322B1/en
Priority to MYPI20030992 priority patent/MY148692A/en
Priority to TW092106347A priority patent/TWI258499B/en
Publication of JP2003336050A publication Critical patent/JP2003336050A/en
Publication of JP2003336050A5 publication Critical patent/JP2003336050A5/ja
Priority to US11/252,111 priority patent/US7297293B2/en
Priority to US11/905,720 priority patent/US7597823B2/en
Priority to US11/905,725 priority patent/US7556744B2/en
Publication of JP4221950B2 publication Critical patent/JP4221950B2/en
Application granted granted Critical
Priority to US12/453,535 priority patent/US7964113B2/en
Priority to US12/453,534 priority patent/US8058793B2/en
Priority to US12/453,587 priority patent/US8076847B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Claims (17)

第1の発光スペクトルを有する光の少なくとも一部を吸収して、前記第1の発光スペクトルと異なる第2の発光スペクトルを有する光を発光する蛍光体であって、
前記蛍光体は、Mnが添加されたSr−Ca−Si−N:R(Rは少なくともEuを含む1又は2以上の希土類系元素である。)系シリコンナイトライドであることを特徴とする蛍光体。
A phosphor that absorbs at least part of light having a first emission spectrum and emits light having a second emission spectrum different from the first emission spectrum,
The phosphor is Sr—Ca—Si—N: R (R is one or more rare earth elements including at least Eu) based silicon nitride to which Mn is added. body.
第1の発光スペクトルを有する光の少なくとも一部を吸収して、前記第1の発光スペクトルと異なる第2の発光スペクトルを有する光を発光する蛍光体であって、
前記蛍光体は、Mnが添加されたSr−Si−N:R(Rは少なくともEuを含む1又は2以上の希土類系元素である。)系シリコンナイトライドであることを特徴とする蛍光体。
A phosphor that absorbs at least part of light having a first emission spectrum and emits light having a second emission spectrum different from the first emission spectrum,
The phosphor is Sr—Si—N: R (R is one or more rare earth elements including at least Eu) based silicon nitride to which Mn is added.
第1の発光スペクトルを有する光の少なくとも一部を吸収して、前記第1の発光スペクトルと異なる第2の発光スペクトルを有する光を発光する蛍光体であって、
前記蛍光体は、Mnが添加されたCa−Si−N:R(Rは少なくともEuを含む1又は2以上の希土類系元素である。)系シリコンナイトライドであることを特徴とする蛍光体。
A phosphor that absorbs at least part of light having a first emission spectrum and emits light having a second emission spectrum different from the first emission spectrum,
The phosphor is Ca—Si—N: R (R is one or more rare earth elements including at least Eu) based silicon nitride to which Mn is added.
前記シリコンナイトライドは、その組成中にOが含有されていることを特徴とする請求項1乃至3の少なくともいずれか一項に記載の蛍光体。  The phosphor according to any one of claims 1 to 3, wherein the silicon nitride contains O in its composition. 前記Oの含有量は、全組成量に対して3重量%以下であることを特徴とする請求項4に記載の蛍光体。  The phosphor according to claim 4, wherein the content of O is 3% by weight or less based on the total composition amount. 前記シリコンナイトライドは、Mg、Sr、Ca、Ba、Zn、B、Al、Cu、Mn、Cr及びNiからなる群より選ばれる少なくとも1種以上が含有されていることを特徴とする請求項1乃至3の少なくともいずれか一項に記載の蛍光体。  2. The silicon nitride contains at least one selected from the group consisting of Mg, Sr, Ca, Ba, Zn, B, Al, Cu, Mn, Cr and Ni. 4. The phosphor according to at least one of items 3 to 3. 前記Sr−Ca−Si−N:R(Rは少なくともEuを含む1又は2以上の希土類系元素である。)系シリコンナイトライドは、SrとCaとのモル比が、Sr:Ca=1〜9:9〜1であることを特徴とする請求項1に記載の蛍光体。  The Sr—Ca—Si—N: R (R is one or more rare earth elements including at least Eu) -based silicon nitride has a molar ratio of Sr: Ca of Sr: Ca = 1 to 1. It is 9: 9-1, The fluorescent substance of Claim 1 characterized by the above-mentioned. 前記Sr−Ca−Si−N:R(Rは少なくともEuを含む1又は2以上の希土類系元素である。)系シリコンナイトライドは、SrとCaとのモル比が、Sr:Ca=1:1であることを特徴とする請求項1に記載の蛍光体。  The Sr—Ca—Si—N: R (R is one or more rare earth elements including at least Eu) silicon nitride has a molar ratio of Sr: Ca of Sr: Ca = 1: The phosphor according to claim 1, wherein the phosphor is 1. 前記蛍光体のRの配合量は、対応するSr−Ca、Sr、Caに対して0.003〜0.5モルであることを特徴とする請求項1乃至3の少なくともいずれか一項に記載の蛍光体。  4. The amount of R in the phosphor is 0.003 to 0.5 mol with respect to the corresponding Sr—Ca, Sr, and Ca, according to at least one of claims 1 to 3. Phosphor. 前記蛍光体のRの配合量は、対応するSr−Ca、Sr、Caに対して0.005〜0.1モルであることを特徴とする請求項1乃至3の少なくともいずれか一項に記載の蛍光体。  4. The amount of R in the phosphor is 0.005 to 0.1 mol with respect to the corresponding Sr—Ca, Sr, and Ca, according to at least one of claims 1 to 3. Phosphor. 前記蛍光体のMnの添加量は、対応するSr−Ca、Sr、Caに対して0.001〜0.3モルであることを特徴とする請求項1乃至3の少なくともいずれか一項に記載の蛍光体。  4. The amount of Mn added to the phosphor is 0.001 to 0.3 mol with respect to the corresponding Sr—Ca, Sr, and Ca. 5. Phosphor. 前記蛍光体のMnの添加量は、対応するSr−Ca、Sr、Caに対して0.0025〜0.03モルであることを特徴とする請求項1乃至3の少なくともいずれか1項に記載の蛍光体。  The amount of Mn added to the phosphor is 0.0025 to 0.03 mol with respect to the corresponding Sr—Ca, Sr, and Ca, and is at least one of claims 1 to 3. Phosphor. 前記蛍光体は、請求項1乃至3に記載の蛍光体のうちの少なくとも2以上の組合せからなることを特徴とする蛍光体。  The phosphor is composed of a combination of at least two of the phosphors according to claim 1. 前記蛍光体は、平均粒径が3μm以上であることを特徴とする請求項1乃至3の少なくともいずれか一項に記載の蛍光体。  4. The phosphor according to claim 1, wherein the phosphor has an average particle diameter of 3 μm or more. 5. 前記蛍光体は、Mnの残留量が5000ppm以下であることを特徴とする請求項1乃至3の少なくともいずれか一項に記載の蛍光体。  4. The phosphor according to claim 1, wherein the phosphor has a residual amount of Mn of 5000 ppm or less. 5. 第1の発光スペクトル持った光を発光する発光素子と、
前記第1の発光スペクトルの光の少なくとも一部を吸収して、前記第1の発光スペクトルと異なる第2の発光スペクトルを有する光を発光する蛍光体と、を有する発光装置であって、
前記蛍光体は、請求項1乃至15の少なくともいずれか一項に記載の蛍光体を含むことを特徴とする発光装置。
A light emitting element that emits light having a first emission spectrum;
A phosphor that absorbs at least part of the light of the first emission spectrum and emits light having a second emission spectrum different from the first emission spectrum,
The light emitting device comprising the phosphor according to at least one of claims 1 to 15.
前記蛍光体は、セリウムで付活されたイットリウム・アルミニウム酸化物蛍光体、セリウムで付活されたイットリウム・ガドリニウム・アルミニウム酸化物蛍光体、及びセリウムで付活されたイットリウム・ガリウム・アルミニウム酸化物蛍光体の少なくともいずれか1以上を含有していることを特徴とする請求項16に記載の発光装置。  The phosphors include yttrium / aluminum oxide phosphors activated with cerium, yttrium / gadolinium / aluminum oxide phosphors activated with cerium, and yttrium / gallium / aluminum oxide phosphors activated with cerium. The light emitting device according to claim 16, comprising at least one of the bodies.
JP2002148555A 2002-03-22 2002-05-23 Phosphor Expired - Fee Related JP4221950B2 (en)

Priority Applications (22)

Application Number Priority Date Filing Date Title
JP2002148555A JP4221950B2 (en) 2002-05-23 2002-05-23 Phosphor
PCT/JP2003/003418 WO2003080764A1 (en) 2002-03-22 2003-03-20 Nitride phosphor and method for preparation thereof, and light emitting device
CNB038004542A CN100430456C (en) 2002-03-22 2003-03-20 Nitride phosphor and method for preparation thereof, and light emitting device
CA2447288A CA2447288C (en) 2002-03-22 2003-03-20 Nitride phosphor and method for preparation thereof, and light emitting device
SG2009037094A SG185827A1 (en) 2002-03-22 2003-03-20 Nitride phosphor and production process thereof, and light emitting device
KR1020097013179A KR100983193B1 (en) 2002-03-22 2003-03-20 Nitride Phosphor and Production Process Thereof, and Light Emitting Device
AU2003221442A AU2003221442A1 (en) 2002-03-22 2003-03-20 Nitride phosphor and method for preparation thereof, and light emitting device
EP03710450.2A EP1433831B1 (en) 2002-03-22 2003-03-20 Nitride phosphor and method for preparation thereof, and light emitting device
KR1020097013180A KR100961342B1 (en) 2002-03-22 2003-03-20 Nitride Phosphor and Production Process Thereof, and Light Emitting Device
SG2009037052A SG173925A1 (en) 2002-03-22 2003-03-20 Nitride phosphor and production process thereof, and light emitting device
KR1020037015150A KR100961324B1 (en) 2002-03-22 2003-03-20 Nitride Phosphor and Production Process Thereof, and Light Emitting Device
US10/478,598 US7258816B2 (en) 2002-03-22 2003-03-20 Nitride phosphor and method for preparation thereof, and light emitting device
SG200600830-4A SG155768A1 (en) 2002-03-22 2003-03-20 Nitride phosphor and production process thereof, and light emitting device
KR1020097013178A KR100961322B1 (en) 2002-03-22 2003-03-20 Nitride Phosphor and Production Process Thereof, and Light Emitting Device
MYPI20030992 MY148692A (en) 2002-03-22 2003-03-21 Nitride phosphor and production process thereof, and light emitting device
TW092106347A TWI258499B (en) 2002-03-22 2003-03-21 Nitride phosphor and method for preparation thereof, and light emitting device
US11/252,111 US7297293B2 (en) 2002-03-22 2005-10-18 Nitride phosphor and production process thereof, and light emitting device
US11/905,720 US7597823B2 (en) 2002-03-22 2007-10-03 Nitride phosphor and production process thereof, and light emitting device
US11/905,725 US7556744B2 (en) 2002-03-22 2007-10-03 Nitride phosphor and production process thereof, and light emitting device
US12/453,534 US8058793B2 (en) 2002-03-22 2009-05-14 Nitride phosphor and production process thereof, and light emitting device
US12/453,535 US7964113B2 (en) 2002-03-22 2009-05-14 Nitride phosphor and production process thereof, and light emitting device
US12/453,587 US8076847B2 (en) 2002-03-22 2009-05-15 Nitride phosphor and production process thereof, and light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002148555A JP4221950B2 (en) 2002-05-23 2002-05-23 Phosphor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004313552A Division JP2005042125A (en) 2004-10-28 2004-10-28 Light emitter

Publications (3)

Publication Number Publication Date
JP2003336050A JP2003336050A (en) 2003-11-28
JP2003336050A5 true JP2003336050A5 (en) 2005-07-07
JP4221950B2 JP4221950B2 (en) 2009-02-12

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JP2002148555A Expired - Fee Related JP4221950B2 (en) 2002-03-22 2002-05-23 Phosphor

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG173925A1 (en) 2002-03-22 2011-09-29 Nichia Corp Nitride phosphor and production process thereof, and light emitting device
JP4696661B2 (en) * 2004-04-26 2011-06-08 三菱化学株式会社 Blue composition for color filter, color filter and color image display device
WO2005111707A1 (en) 2004-04-26 2005-11-24 Mitsubishi Chemical Corporation Blue color composition for color filter, color filter, and color image display device
JP4128564B2 (en) * 2004-04-27 2008-07-30 松下電器産業株式会社 Light emitting device
JP2006137902A (en) * 2004-11-15 2006-06-01 Shoei Chem Ind Co Nitride phosphor, process for producing nitride phosphor and white light-emitting element
CN101171321B (en) * 2005-04-01 2013-06-05 三菱化学株式会社 Alloy powder for raw material of inorganic functional material and phosphor
CN104759615A (en) * 2005-04-01 2015-07-08 三菱化学株式会社 Alloy powder for inorganic functional material and phosphor
JP4923771B2 (en) * 2005-06-17 2012-04-25 三菱化学株式会社 Display device
JP2007180377A (en) * 2005-12-28 2007-07-12 Sharp Corp Light emitting device
JP5239176B2 (en) * 2006-03-28 2013-07-17 三菱化学株式会社 Alloy powder for phosphor and method for producing the same
JP2017088800A (en) * 2015-11-16 2017-05-25 サムスン エレクトロニクス カンパニー リミテッド Fluophor and manufacturing method therefor
JP7174266B2 (en) * 2020-06-30 2022-11-17 日亜化学工業株式会社 light emitting device

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