JP2019007023A5

JP2019007023A5 -

Info

Publication number: JP2019007023A5
Application number: JP2018188150A
Authority: JP
Filing date: 2018-10-03
Publication date: 2019-09-12
Anticipated expiration: 2036-09-30

Claims

A group consisting of at least one element selected from the group consisting of Ca, Sr, Ba and Mg, at least one element selected from the group consisting of Li, Na and K, and Eu, Ce, Tb and Mn and at least one element more selective, and Al, and a N, on the surface of the phosphor core having a composition comprising Si as necessary, have a layer of a compound containing fluorine,
The fluorine-containing compound layer has a thickness of 0.05 μm or more and 0.8 μm or less,
The layer of fluorine containing compound, at least a first layer, the composition is have a different second layer and its first layer, the nitride phosphor.

In the composition of the phosphor core, at least one element M selected from the group consisting of Ca, Sr, Ba and Mg ^ａa And at least one element M selected from the group consisting of Li, Na and K ^ｂb And at least one element M selected from the group consisting of Eu, Ce, Tb and Mn ^ｃc And Al and N, and optionally Si, the total number of moles of Al and Si is 3, and the element M ^ａa The molar ratio of the element M is 0.80 or more and 1.05 or less. ^ｂb The molar ratio of the element M is 0.80 or more and 1.05 or less. ^ｃc The molar ratio of N is more than 0.001 and 0.1 or less, the molar ratio of N is 3.0 or more and 5.0 or less, and the molar ratio of Si is 0 or more and 0.5 or less. The nitride phosphor according to 1.

Element M ^ａa Contains at least one element selected from Ca and Sr, and the element M ^ａa The nitride phosphor according to claim 2, wherein the total molar ratio of Ca and Sr contained in said is 85 mol% or more.

Element M ^ｂb Contains at least Li and the element M ^ｂb 4. The nitride phosphor according to claim 2, wherein the molar ratio of Li contained in said is 80 mol% or more.

The nitride phosphor according to claim 1 or 2 , wherein the phosphor core has a composition represented by the following general formula (I).
^{_{^{_{^{M a v M b w M c}}}}} x Al 3-y Si y N z (I)
(In the formula, M ^a is at least one element selected from the group consisting of Ca, Sr, Ba and Mg, and M ^b is at least one type selected from the group consisting of Li, Na and K. M ^c is at least one element selected from the group consisting of Eu, Ce, Tb and Mn, and v, w, x, y and z are 0.80 ≦ v ≦ 1. 05, 0.80 ≦ w ≦ 1.05, 0.001 <x ≦ 0.1, 0 ≦ y ≦ 0.5, 3.0 ≦ z ≦ 5.0.)

The first layer includes fluorine and at least one element selected from the group consisting of Ca, Sr, Ba and Mg;
The second layer includes at least one element selected from the group consisting of Ca, Sr, Ba, and Mg, Al, fluorine, and nitrogen;
6. The nitride phosphor according to claim 1 , wherein the nitride phosphor has the first layer on the surface and the second layer on the inner side of the first layer . 7.

In the general formula (I), M ^ａa Is Sr and M ^ｂb Is Li and M ^ｃc The nitride phosphor according to claim 5, wherein y is Eu, and y is y = 0.

The nitride phosphor according to any one of claims 1 to 7, wherein an average particle diameter of the nitride phosphor including the fluorine-containing compound layer is 4.0 µm or more and 20 µm or less.

9. The nitride phosphor according to claim 1, wherein an average thickness of the fluorine-containing compound layer is 0.05 μm or more and 0.3 μm or less.

The nitride phosphor according to any one of claims 1 to 9, wherein the fluorine content is 1.0 mass% or more and 10.0 mass% or less.

Excited by light in a wavelength range of 400 nm or more and 570 nm or less, having an emission spectrum having an emission peak wavelength in a range of 630 nm or more and 670 nm or less, and a ratio of reflectance at 650 nm to reflectance at 460 nm is 2 or more. The nitride phosphor according to any one of claims 1 to 10.

A light emitting device comprising: the nitride phosphor according to any one of claims 1 to 11 ; and an excitation light source that emits light having a peak wavelength of an emission spectrum within a wavelength range of 420 nm to 500 nm .

The light-emitting device according to claim 12, wherein the excitation light source is a semiconductor light-emitting element that emits light having a peak wavelength of an emission spectrum within a wavelength range of 420 nm or more and 460 nm or less.

A fluorescent member comprising: a first phosphor including the nitride phosphor according to any one of claims 1 to 11; and a second phosphor having a peak wavelength of an emission spectrum different from the first phosphor. The light-emitting device according to claim 12 or 13, comprising:

The light emission according to claim 14, wherein the second phosphor includes at least one selected from phosphors having a composition represented by the following formula (IIa), (IId), (IIf), or (IIg). apparatus.
(Y, Gd, Tb, Lu) _３3 (Al, Ga) _５5 O _１２12 : Ce (IIa)
(Ca, Sr) _８8 MgSi _４4 O _１６16 (Cl, F, Br) _２2 : Eu (IId)
(Ba, Sr, Ca) _２2 Si _５5 N _８8 : Eu (IIf)
(Sr, Ca) AlSiN _３3 : Eu (IIg)

The light emitting device according to claim 14, wherein the second phosphor includes at least one selected from phosphors having a composition represented by the following formula (IIc), (IIe), or (IIi).
Si _６−ｐ6-p Al _ｐp O _ｐp N _８−ｐ8-p : Eu (0 <p ≦ 4.2) (IIc)
(Ba, Sr, Ca) Ga _２2 S _４4 : Eu (IIe)
(Ba, Sr) MgAl _１０10 O _１７17 : Mn (IIi)

The content ratio (first phosphor / second phosphor) of the first phosphor and the second phosphor is 0.01 or more and 5.00 or less as a mass ratio. The light emitting device according to any one of the above.

The light emitting device according to any one of claims 14 to 17, wherein an average particle diameter of the second phosphor is 2 µm or more and 35 µm or less.