JP2006028295A5 - - Google Patents
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- JP2006028295A5 JP2006028295A5 JP2004207271A JP2004207271A JP2006028295A5 JP 2006028295 A5 JP2006028295 A5 JP 2006028295A5 JP 2004207271 A JP2004207271 A JP 2004207271A JP 2004207271 A JP2004207271 A JP 2004207271A JP 2006028295 A5 JP2006028295 A5 JP 2006028295A5
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- nitride phosphor
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第１の構成は、 一般式MAlSiN 3 :Euで表記され、MがII価の価数をとるMg、Ca、Sr、Ba、Znからなる群から選択された一種以上の元素、Alがアルミニウム、Siが珪素、Nが窒素、Euが付活剤となる元素であり、炭素含有量が０．０８重量％より少なく、かつ、酸素含有量が３．０重量％より少ないことを特徴とする窒化物蛍光体である。
The first structure is represented by the general formula MAlSiN 3 : Eu, and M is one or more elements selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, where Al has a valence of II, Al is aluminum, Si is silicon, N is an element nitrogen, which Eu is an activator, the carbon content is rather less than 0.08 wt%, and wherein the oxygen content is less than 3.0 wt% It is a nitride phosphor.
第２の構成は、上記窒化物蛍光体が粉末状であることを特徴とする第１の構成のいずれかに記載の窒化物蛍光体である。
A second configuration is the nitride phosphor according to any one of the first configurations, wherein the nitride phosphor is in a powder form.
第３の構成は、上記粉末状の窒化物蛍光体の平均粒度が２０μｍ以下、０．１μｍ以上であることを特徴とする第２の構成に記載の窒化物蛍光体である。
A third configuration is the nitride phosphor according to the second configuration, wherein the powdered nitride phosphor has an average particle size of 20 μm or less and 0.1 μm or more.
第４の構成は、第１から第３の構成のいずれかに記載の窒化物蛍光体の製造方法であって、上記窒化物蛍光体の原料を窒化ホウ素材質の焼成容器内に充填し、不活性雰囲気中で焼成して窒化物蛍光体を製造することを特徴とする窒化物蛍光体の製造方法である。
A fourth configuration is a method for manufacturing a nitride phosphor according to any one of the first to third configurations, in which a raw material of the nitride phosphor is filled in a firing container made of a boron nitride material, A nitride phosphor manufacturing method is characterized in that a nitride phosphor is manufactured by firing in an active atmosphere.
第５の構成は、第１から第３の構成のいずれかに記載の窒化物蛍光体と、所定波長の光を発光する発光部とを有し、上記所定波長の光の一部を励起源とし、上記窒化物蛍光体を上記所定波長と異なる波長で発光させることを特徴とする光源である。
A fifth configuration includes the nitride phosphor according to any one of the first to third configurations and a light emitting unit that emits light of a predetermined wavelength, and a part of the light of the predetermined wavelength is an excitation source. And the nitride phosphor emits light at a wavelength different from the predetermined wavelength.
第６の構成は、上記所定波長が２５０〜５５０ｎｍの波長であることを特徴とする第５の構成に記載の光源である。
A sixth configuration is the light source according to the fifth configuration, wherein the predetermined wavelength is a wavelength of 250 to 550 nm.
第７の構成は、第１から第３の構成のいずれかに記載の窒化物蛍光体と、所定波長の光を発光する発光部とを有し、上記所定波長の光の一部を励起源とし、上記窒化物蛍光体を上記所定波長と異なる波長で発光させることを特徴とするＬＥＤである。
A seventh configuration includes the nitride phosphor according to any one of the first to third configurations and a light emitting unit that emits light of a predetermined wavelength, and a part of the light of the predetermined wavelength is an excitation source. The nitride phosphor emits light at a wavelength different from the predetermined wavelength.
第８の構成は、上記所定波長が２５０〜５５０ｎｍの波長であることを特徴とする第７の構成に記載のＬＥＤである。
An eighth configuration is the LED according to the seventh configuration, wherein the predetermined wavelength is a wavelength of 250 to 550 nm.
第１から第３のいずれかの構成に係る窒化物蛍光体によれば、炭素含有量が０．０８重量％より少ない窒化物蛍光体、酸素含有量が３．０重量％より少ない窒化物蛍光体であることから、発光に寄与しない炭素と酸素の不純物含有量が少ないので、窒化物蛍光体の発光強度の低下を抑制でき、当該窒化物蛍光体の発光効率を向上させることができる。
According to the nitride phosphor according to any one of the first to third configurations, the nitride phosphor having a carbon content of less than 0.08 wt% and the nitride phosphor having an oxygen content of less than 3.0 wt% it either et a body, since the impurity content of carbon and oxygen not contributing to light emission is small, it is possible to suppress deterioration of emission intensity of the nitride phosphor can improve the luminous efficiency of the nitride phosphor.
また、一般式がＭ−Ａｌ−Ｓｉ−Ｎ：Ｚで表記され、ＭがII価の価数をとる一種以上の元素、Ａｌがアルミニウム、Ｓｉが珪素、Ｎが窒素、Ｚが付活剤となる元素であることから、紫外〜緑色の光を発光する発光部からの紫外〜緑色（波長域２５０〜５５０ｎｍ）の広い範囲の光に励起帯を有するので、発光効率を更に向上させることができる。
In addition, the general formula is represented by M-Al-Si-N: Z, where M is one or more elements having a valence of II, Al is aluminum, Si is silicon, N is nitrogen, and Z is an activator. Since it has an excitation band in a wide range of light from ultraviolet to green (wavelength range 250 to 550 nm) from a light emitting part that emits ultraviolet to green light, the luminous efficiency can be further improved. .
第２または第３の構成に係る窒化物蛍光体が粉末状であることから、窒化物蛍光体の塗布または充填を容易に実施できる。更に、窒化物蛍光体の粉末の平均粒度が２０μｍ以下、０．１μｍ以上であることから、発光効率を向上させることができる。
Since the nitride phosphor according to the second or third configuration is in a powder form, it is possible to easily apply or fill the nitride phosphor. Furthermore, since the average particle size of the nitride phosphor powder is 20 μm or less and 0.1 μm or more, the luminous efficiency can be improved.
第４の構成に係る窒化物蛍光体の製造方法によれば、窒化物蛍光体の原料を窒化ホウ素材質の焼成容器内に充填し、不活性雰囲気中で焼成して窒化物蛍光体を製造することから、炭素および酸素の不純物含有量が少ない窒化物蛍光体を製造することができる。このように、発光に寄与しない不純物が少ない窒化物蛍光体を製造できるので、発光強度の低下を抑制でき、窒化物蛍光体の発光効率を向上させることができる。
According to the method for manufacturing a nitride phosphor according to the fourth configuration, a nitride phosphor is filled with a nitride phosphor raw material in a firing container made of boron nitride and fired in an inert atmosphere to produce the nitride phosphor. As a result, a nitride phosphor having a low carbon and oxygen impurity content can be produced. Thus, since the nitride phosphor with few impurities that do not contribute to light emission can be manufactured, a decrease in emission intensity can be suppressed, and the light emission efficiency of the nitride phosphor can be improved.
第５または第６の構成に係る光源は、窒化物蛍光体が、発光部が発光する所定の広い波長域(２５０〜５５０ｎｍ)の光に励起帯を有して発光するため、これらの窒化物蛍光体と発光部との組み合わせにより、可視光または白色光を発光する発光効率の高い光源を得ることができる。
In the light source according to the fifth or sixth configuration, the nitride phosphor emits light having an excitation band in light of a predetermined wide wavelength range (250 to 550 nm) emitted from the light emitting unit. By combining the phosphor and the light emitting portion, a light source with high luminous efficiency that emits visible light or white light can be obtained.
第７または第８の構成に係るＬＥＤは、窒化物蛍光体が、発光部が発光する所定の広い波長域(２５０〜５５０ｎｍ)の光に励起帯を有して発光するため、これらの窒化物蛍光体と発光部との組み合わせにより、可視光または白色光を発光する発光効率の高いＬＥＤを得ることができる。
In the LED according to the seventh or eighth configuration, the nitride phosphor emits light having an excitation band in light of a predetermined wide wavelength range (250 to 550 nm) emitted from the light emitting unit. By combining the phosphor and the light emitting portion, an LED having high luminous efficiency that emits visible light or white light can be obtained.
Claims (8)
上記窒化物蛍光体の原料を窒化ホウ素材質の焼成容器内に充填し、不活性雰囲気中で焼成して窒化物蛍光体を製造することを特徴とする窒化物蛍光体の製造方法。 A method for producing a nitride phosphor according to any one of claims 1 to 3 ,
A nitride phosphor is produced by filling a nitride phosphor material into a firing vessel made of boron nitride and firing in an inert atmosphere to produce a nitride phosphor.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004207271A JP5016187B2 (en) | 2004-07-14 | 2004-07-14 | Nitride phosphor, method for producing nitride phosphor, light source and LED using the nitride phosphor |
| TW094105848A TWI262609B (en) | 2004-02-27 | 2005-02-25 | Phosphor and manufacturing method thereof, and light source, LED using said phosphor |
| KR1020050016250A KR100702757B1 (en) | 2004-02-27 | 2005-02-26 | Phosphor and manufacturing method thereof, and light source, led using said phosphor |
| EP05004375A EP1568753B1 (en) | 2004-02-27 | 2005-02-28 | Phosphor and manufacturing method thereof, and LED light source using said phosphor |
| CNB2005100525227A CN100340631C (en) | 2004-02-27 | 2005-02-28 | Phosphor and manufacturing method thereof, and led light source using said phosphor |
| DE602005014296T DE602005014296D1 (en) | 2004-02-27 | 2005-02-28 | Phosphor and its preparation and LED light source using this phosphor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004207271A JP5016187B2 (en) | 2004-07-14 | 2004-07-14 | Nitride phosphor, method for producing nitride phosphor, light source and LED using the nitride phosphor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010153511A Division JP2010265463A (en) | 2010-07-06 | 2010-07-06 | Nitride phosphor, manufacturing method of nitride phosphor, and light source and led using the nitride phosphor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006028295A JP2006028295A (en) | 2006-02-02 |
| JP2006028295A5 true JP2006028295A5 (en) | 2010-01-21 |
| JP5016187B2 JP5016187B2 (en) | 2012-09-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004207271A Expired - Lifetime JP5016187B2 (en) | 2004-02-27 | 2004-07-14 | Nitride phosphor, method for producing nitride phosphor, light source and LED using the nitride phosphor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5016187B2 (en) |
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| JP5446066B2 (en) * | 2006-12-28 | 2014-03-19 | 日亜化学工業株式会社 | Nitride phosphor and light emitting device using the same |
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| WO2012036016A1 (en) * | 2010-09-17 | 2012-03-22 | 株式会社東芝 | Phosphor and light-emitting device |
| WO2013044490A1 (en) * | 2011-09-29 | 2013-04-04 | 北京宇极科技发展有限公司 | Light-emitting material of nitrogen compound, preparation process thereof and illumination source manufactured therefrom |
| CN103045256B (en) * | 2011-10-17 | 2014-08-27 | 有研稀土新材料股份有限公司 | LED (Light Emitting Diode) red fluorescence material and luminescent device containing same |
| US20140015400A1 (en) * | 2012-07-13 | 2014-01-16 | Rohm And Haas Electronic Materials Llc | Phosphor and light emitting devices comprising same |
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| JP7280866B2 (en) | 2018-03-29 | 2023-05-24 | デンカ株式会社 | α-type sialon phosphor and light-emitting device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3837588B2 (en) * | 2003-11-26 | 2006-10-25 | 独立行政法人物質・材料研究機構 | Phosphors and light emitting devices using phosphors |
| JP4568867B2 (en) * | 2004-06-29 | 2010-10-27 | 独立行政法人物質・材料研究機構 | Method for producing composite nitride phosphor |
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2004
- 2004-07-14 JP JP2004207271A patent/JP5016187B2/en not_active Expired - Lifetime
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