JP2003335599A5 - - Google Patents

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Publication number
JP2003335599A5
JP2003335599A5 JP2002147362A JP2002147362A JP2003335599A5 JP 2003335599 A5 JP2003335599 A5 JP 2003335599A5 JP 2002147362 A JP2002147362 A JP 2002147362A JP 2002147362 A JP2002147362 A JP 2002147362A JP 2003335599 A5 JP2003335599 A5 JP 2003335599A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002147362A
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Japanese (ja)
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JP2003335599A (en
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Publication date
Application filed filed Critical
Priority to JP2002147362A priority Critical patent/JP2003335599A/en
Priority claimed from JP2002147362A external-priority patent/JP2003335599A/en
Publication of JP2003335599A publication Critical patent/JP2003335599A/en
Publication of JP2003335599A5 publication Critical patent/JP2003335599A5/ja
Pending legal-status Critical Current

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JP2002147362A 2002-05-22 2002-05-22 Process for identifying defect distribution in silicon single crystal ingot Pending JP2003335599A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002147362A JP2003335599A (en) 2002-05-22 2002-05-22 Process for identifying defect distribution in silicon single crystal ingot

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002147362A JP2003335599A (en) 2002-05-22 2002-05-22 Process for identifying defect distribution in silicon single crystal ingot

Publications (2)

Publication Number Publication Date
JP2003335599A JP2003335599A (en) 2003-11-25
JP2003335599A5 true JP2003335599A5 (en) 2005-10-20

Family

ID=29705954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002147362A Pending JP2003335599A (en) 2002-05-22 2002-05-22 Process for identifying defect distribution in silicon single crystal ingot

Country Status (1)

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JP (1) JP2003335599A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5163459B2 (en) * 2008-12-05 2013-03-13 株式会社Sumco Silicon single crystal growth method and silicon wafer inspection method
JP5282762B2 (en) * 2010-04-22 2013-09-04 信越半導体株式会社 Method for producing silicon single crystal
JP5621612B2 (en) * 2011-01-19 2014-11-12 株式会社Sumco Silicon single crystal inspection method and manufacturing method
CN116642914B (en) * 2023-05-29 2024-02-13 山东有研半导体材料有限公司 Detection method for micro defects of heavily arsenic-doped low-resistivity silicon single crystal

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