JP2003335599A5 - - Google Patents
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- JP2003335599A5 JP2003335599A5 JP2002147362A JP2002147362A JP2003335599A5 JP 2003335599 A5 JP2003335599 A5 JP 2003335599A5 JP 2002147362 A JP2002147362 A JP 2002147362A JP 2002147362 A JP2002147362 A JP 2002147362A JP 2003335599 A5 JP2003335599 A5 JP 2003335599A5
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- JP
- Japan
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2002147362A JP2003335599A (en) | 2002-05-22 | 2002-05-22 | Process for identifying defect distribution in silicon single crystal ingot |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2002147362A JP2003335599A (en) | 2002-05-22 | 2002-05-22 | Process for identifying defect distribution in silicon single crystal ingot |
Publications (2)
Publication Number | Publication Date |
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JP2003335599A JP2003335599A (en) | 2003-11-25 |
JP2003335599A5 true JP2003335599A5 (en) | 2005-10-20 |
Family
ID=29705954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2002147362A Pending JP2003335599A (en) | 2002-05-22 | 2002-05-22 | Process for identifying defect distribution in silicon single crystal ingot |
Country Status (1)
Country | Link |
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JP (1) | JP2003335599A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5163459B2 (en) * | 2008-12-05 | 2013-03-13 | 株式会社Sumco | Silicon single crystal growth method and silicon wafer inspection method |
JP5282762B2 (en) * | 2010-04-22 | 2013-09-04 | 信越半導体株式会社 | Method for producing silicon single crystal |
JP5621612B2 (en) * | 2011-01-19 | 2014-11-12 | 株式会社Sumco | Silicon single crystal inspection method and manufacturing method |
CN116642914B (en) * | 2023-05-29 | 2024-02-13 | 山东有研半导体材料有限公司 | Detection method for micro defects of heavily arsenic-doped low-resistivity silicon single crystal |
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2002
- 2002-05-22 JP JP2002147362A patent/JP2003335599A/en active Pending