JP2003332517A - Microwave integrated circuit, its manufacturing method and radio equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that the cost reduction of the MMIC 203 mounting of an expensive multilayer ceramic substrate and the manufacturing a substrate of a large area are difficult, in a conventional microwave integrated circuit. <P>SOLUTION: In a multilayer substrate 101, Teflon (registered trade mark) is stuck on a first layer substrate 101a, and glass epoxy substrates are stuck on a second layer substrate 101b and a third layer substrate 101c. A first wiring layer 201a is made of a strip conductor, a second wiring layer 201b is made of a ground electrode 210 of a microstrip structure, and the layers 201a, 201b are used for transmitting a high frequency signal. A third wiring layer 201c and a fourth wiring layer 201d are used for an intermediate frequency, power supply and control. A viahole 211 is filled with a conductive material 209, thereby preventing a thermoplastic adhesive agent for mounting the MMIC 203 from flowing in the viahole. In the manufacturing method, a surface mounting device 103 is mounted by a reflow process, a deposit is removed, and a bare chip component 104 is face-up mounted on the ground electrode 210 by using the thermoplastic adhesive agent 208. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention mainly relates to a structure and manufacturing method of an integrated circuit used in a microwave and a millimeter wave band.

[0002]

2. Description of the Related Art In recent years, with the rapid increase in the number of users of wireless devices, there is an urgent need to use the millimeter wave band, which is a new frequency resource.

Utilization of the short wavelength of the millimeter wave band is also being studied for application to a distance measuring device such as an automobile collision prevention radar. In order to put the millimeter-wave band device into practical use, lowering the price, especially on the premise of mass productivity of the high-frequency circuit section,
Miniaturization is an issue.

As a conventional high-frequency circuit structure relating to the present invention, there is a microwave integrated circuit multi-chip module and a microwave integrated circuit multi-chip module mounting structure disclosed in Japanese Patent No. 3129288, for example.

FIG. 8 shows a conventional microwave integrated circuit multichip module. Reference numeral 701 denotes a package substrate, 702 denotes a microstrip antenna, and 70
Reference numeral 3 indicates a via hole, 704 indicates a waveguide portion, and 7
Reference numeral 05 denotes a high frequency circuit layer, 706 denotes a wiring layer, 7
Reference numeral 07 indicates a ground conductor layer, 708 indicates a concave portion, and 709
Is MMIC (Microwave Monolithi)
c Integrated Circuit: MMI
C), 710 is a circulator, 711 is a magnetic material, 712 is a LID, 713 is a recess, and 714 is a dielectric layer ceramic.

In the multi-chip module, the package substrate 701 has a high-frequency circuit layer 705 provided on the surface thereof.
And a ground conductor layer 707 provided below the conductor layer and a dielectric layer ceramic 714 sandwiched between the conductor layers provide a high-frequency transmission path, and a plurality of MMICs 709 are recessed 708.
It is installed in.

[0007]

In the conventional microwave integrated circuit, the MMIC is mounted on an expensive multilayer ceramic substrate.
Since it is difficult to reduce the cost because a complicated recess for mounting is formed, and it is difficult to manufacture a large-area substrate from the viewpoint of reliability, it is not suitable for mass production.

According to the present invention, in such a microwave integrated circuit, a surface-mounted component mounted by a reflow process on a dielectric layer-bonded substrate made of a resin material and a bare chip IC mounted face-up are easily mounted together. It is an object of the present invention to construct a microwave integrated circuit in a small size and at a low cost by various manufacturing processes.

[0009]

In order to solve this problem, the present invention uses a multilayer substrate in which dielectric layers made of a resin material are laminated, and surface mounting components are mounted by a reflow process which is excellent in mass productivity, and a bare chip. The IC is a microwave integrated circuit having excellent performance and high reliability in a simple manufacturing process by face-up mounting with a thermoplastic adhesive material.

As a result, a microwave integrated circuit in which many functions are integrated can be constructed in a small size and at a low cost in a manufacturing process that is simple and suitable for mass production.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION The invention according to claim 1 of the present invention includes at least two or more dielectric layers having different dielectric constants, at least three or more circuit wiring layers insulated by the dielectric layers, and A multilayer board including a ground conductor layer formed in a circuit wiring layer, a surface mount component mounted on the multilayer board, a via hole connecting the ground conductor layer and filled with a conductor material, and a ground conductor on the ground conductor. It is a microwave integrated circuit that has a semiconductor substrate connected to a thermoplastic adhesive material, and a semiconductor substrate is mounted on a multilayer substrate by laminating a dielectric layer made of a resin material that is inexpensive and excellent in mass productivity. By doing so, an inexpensive and high-performance microwave integrated circuit can be realized.

The invention according to claim 2 is the microwave integrated circuit according to claim 1, wherein the dielectric layer is a layer containing Teflon or a layer containing glass and epoxy, and the dielectric layer loss is A small dielectric layer containing Teflon that does not require strict wiring precision due to its low dielectric constant and excellent high-frequency characteristics, and a glass epoxy substrate that is a highly reliable and inexpensive dielectric layer containing glass and epoxy By combining, a plane filter and low-loss inter-circuit wiring are placed on the wiring layer on the dielectric layer with excellent high-frequency characteristics,
By arranging wiring such as a power supply and a control line, which need to be miniaturized, on a glass epoxy substrate having a multilayer wiring, an inexpensive and high-performance microwave integrated circuit can be realized.

The invention according to claim 3 is the microwave integrated circuit according to claim 1, wherein the dielectric layer is a layer containing polyimide as a main component or a layer containing glass and epoxy. A glass epoxy substrate that is a dielectric layer containing a polyimide that has low loss and low dielectric constant and that does not require strict wiring accuracy and that has excellent high-frequency characteristics, and a highly reliable and inexpensive dielectric layer that contains glass and epoxy. By attaching a flat filter and low-loss inter-circuit wiring to the wiring layer on the dielectric layer that excels in high-frequency characteristics, glass that has multiple layers of wiring that requires miniaturization such as power supply and control lines By arranging it on an epoxy substrate, an inexpensive and high-performance microwave integrated circuit can be realized.

The invention according to claim 4 is the microwave integrated circuit according to claim 1, wherein the dielectric layer is a layer containing benzocyclobutene as a main component or a layer containing glass and epoxy. A dielectric layer containing benzocyclobutene that has low body layer loss and low dielectric constant that does not require strict wiring precision and has excellent high-frequency characteristics, and a highly reliable and inexpensive dielectric layer that contains glass and epoxy. By laminating a certain glass epoxy substrate, a plane filter and low-loss inter-circuit wiring are placed on the wiring layer on the dielectric layer with excellent high frequency characteristics, and wiring that requires miniaturization such as power supply and control lines By arranging on a glass epoxy substrate with multi-layer wiring, an inexpensive and high-performance microwave integrated circuit can be realized.

The invention according to claim 5 is the microwave integrated circuit according to claim 1, wherein the dielectric layer is a layer containing a liquid crystal polymer as a main component or a layer containing glass and epoxy. A dielectric layer containing a liquid crystal polymer that has a small layer loss and does not require strict wiring accuracy due to a low dielectric constant, and a glass that is a reliable and inexpensive glass and a dielectric layer containing epoxy. By attaching an epoxy substrate, a planar filter and low-loss inter-circuit wiring are placed on the wiring layer on the dielectric layer with excellent high-frequency characteristics, and wiring that requires miniaturization such as power supply and control lines is multilayer wiring. By arranging it on the glass epoxy substrate, an inexpensive and high-performance microwave integrated circuit can be realized.

In a sixth aspect of the invention, the semiconductor substrate is
The device is mounted directly above the via hole of the ground conductor layer.
The microwave integrated circuit according to any one of 1 to 5, wherein the semiconductor substrate is arranged directly above the via hole in which the conductive material is embedded, so that a semiconductor is formed without forming a complicated recess on the substrate side. The ground electrode of the substrate and the ground conductor layer of the multi-layer substrate can be reliably connected, and the semiconductor substrate can be mounted without impairing the performance of the semiconductor substrate, and a microwave integrated circuit having excellent characteristics can be realized.

In a seventh aspect of the invention, the semiconductor substrate is
The microwave integrated circuit according to any one of claims 1 to 5, which is mounted in a region of the ground conductor layer surrounded by the via hole, and the via hole is provided around the semiconductor substrate in consideration of characteristics of the semiconductor substrate. By arranging, it is not necessary to have a via hole under which the adhesive material flows directly under the semiconductor substrate, which facilitates the thickness control, enables the semiconductor substrates to be mounted in parallel, and has excellent characteristics. The function is to realize a wave integrated circuit.

According to an eighth aspect of the invention, the semiconductor substrate is
The bare chip IC mounted by face-up, and connected to the circuit wiring layer by a wire.
The microwave integrated circuit described in (1) above has an effect that a high-performance microwave integrated circuit can be realized by directly mounting the bare chip IC on a multilayer substrate made of a dielectric layer.

According to a ninth aspect of the invention, the semiconductor substrate is
9. The microwave integrated circuit according to claim 8, wherein the microwave integrated circuit is arranged in a circuit wiring layer which is at least one layer lower than the circuit wiring layer to which the wire is connected, and a dielectric layer made of a resin material having a large thermal expansion coefficient is formed. By removing it from below the semiconductor substrate and connecting it to the ground conductor layer on the dielectric layer made of a resin material having a small coefficient of thermal expansion, it is possible to relieve the stress applied to the semiconductor substrate, and a highly reliable micro The function is to realize a wave integrated circuit.

According to a tenth aspect of the present invention, the micro module according to any one of the first to ninth aspects further comprises a functional module which is a separately formed circuit block mounted so as to cover the through hole provided in the multilayer substrate. This is a wave integrated circuit, and an expensive MMIC is mounted, the yield is bad, and a circuit block that requires high wiring accuracy is manufactured separately as a functional module and mounted after checking the performance. In addition, by exchanging only the functional module when there is a failure, there is an effect that a high-performance and inexpensive microwave integrated circuit can be realized.

The invention described in claim 11 is a first step of mounting surface mount components on a multilayer substrate by a reflow step,
A micro having a second step of cleaning the multi-layer substrate on which the surface-mounted component is mounted using plasma or ozone, and a third step of mounting a semiconductor substrate face-up on the cleaned multi-layer substrate. This is a method for manufacturing a wave integrated circuit, and has an effect of providing a manufacturing method suitable for a mass production process.

According to a twelfth aspect of the present invention, the step of filling the via hole with a conductive adhesive and curing the same and mounting the semiconductor substrate with the thermoplastic conductive adhesive is performed before the third step. The method for manufacturing a microwave integrated circuit according to claim 11, further comprising: filling the via hole to facilitate control of the thickness of the thermoplastic conductive adhesive, which is suitable for mass production. It has the action of providing a method.

A thirteenth aspect of the present invention is a radio apparatus using the microwave integrated circuit according to any one of the first to tenth aspects, and is small in size and excellent in mass productivity, and has high functionality and high reliability. By using the microwave integrated circuit having the property, a small and low-priced and highly functional wireless device can be realized.

The invention described in claim 14 is a radio system using the microwave integrated circuit according to any one of claims 1 to 10, and is small in size and excellent in mass productivity.
By using a microwave integrated circuit having high functionality and high reliability, there is an effect that a small and low-priced, high-performance wireless system can be realized.

FIG. 1 shows an embodiment of the present invention.
Starting from FIG. 7, description will be made.

(Embodiment 1) FIG. 1 is a perspective view of a microwave integrated circuit of the present invention. 101 indicates a multilayer substrate,
Reference numeral 101a denotes a first layer substrate, 101b denotes a second layer substrate, 101c denotes a third layer substrate, 102 denotes a functional module which is a separately made circuit block, 103 denotes a surface mount component, and 104 Indicates a bare chip IC, 1
Reference numeral 05 denotes a plane filter, 108 denotes a metal plate, and 109 denotes a housing.

The microwave integrated circuit comprises a multilayer substrate 101,
It is composed of a functional module 102, a surface mount component 103, and a bare chip IC 104. In addition, the multilayer substrate 10
1 is mounted on the housing 109 together with the metal plate 108.

First, each component will be described. The multilayer substrate 101 is composed of a dielectric layer and a circuit wiring layer, and
Then, a Teflon substrate, which is a dielectric layer containing Teflon, is attached to the first layer substrate 101a, and a glass epoxy substrate is attached to the second layer substrate 101b and the third layer substrate 101c, and three dielectric layers and four wiring layers are attached. An example of a layered substrate is shown.

By using a Teflon substrate having a low dielectric constant and a small loss as the first layer substrate 101a, it is possible to suppress the connection loss between the circuits to a small level and to realize the plane filter 105 with a low loss.

Similar effects can be obtained by using a dielectric layer containing polyimide, benzocyclobutene, or liquid crystal polymer as a main component other than Teflon.

FIG. 2 shows a sectional view of the mounting portion of the bare chip IC 104. 201a is the first uppermost layer of the multilayer substrate 101.
A wiring layer is shown, 201b shows a second wiring layer between the first layer and the second layer, 201c shows a third wiring layer between the second layer and the third layer, and 201d shows between the third layer and the metal plate 108. Fourth
A wiring layer is shown, 202 is a ground conductor layer, and 203 is M.
MIC is shown, 204 is a wire, 205 is a conductive adhesive, 206 is a via hole, and 207 is a plate capacitor.

The first wiring layer 201a to the fourth wiring layer 20
1d is used as a circuit wiring and ground conductor layer 202, and each layer is connected by a via hole 206. The wiring layers are selectively used, for example, by using the first wiring layer 201a as a strip conductor and the second wiring layer 201b as a ground conductor layer 202 in a microstrip structure, which is mainly used for transmission of high-frequency signals, and is used for the third wiring layer 201c and the fourth wiring. Layer 20
By using 1d for the intermediate frequency, the power supply, and the control, it is possible to configure so that the noise of the power supply or the control signal does not affect the high frequency signal.

In FIG. 2, the first wiring layer 201a and the ground conductor layer 202 are formed on the first layer substrate 101a, and the MMIC 203, which is the bare chip IC 104, and the plate capacitor 207 are mounted with the conductive adhesive 205. M
MIC203, plate capacitor 207 and first wiring layer 2
01a are connected by a wire 204. The ground conductor layer 202 is formed in the second wiring layer 201 by the via hole 206.
b to the ground conductor layer 2 formed on the fourth wiring layer 201d
02 is connected.

The intermediate frequency, power supply, and control wiring of each layer are also connected by the via hole 206. A conductive adhesive 205 is provided in the via hole 206 of the ground conductor layer 202.
Etc. are filled so that the conductive adhesive 205 used when mounting the MMIC 203 does not flow in.

As the conductive adhesive 205 used for mounting the MMIC 203 and filling the via hole 206, a thermosetting type may be used, but by using thermoplastic having a smaller elastic coefficient than the thermosetting type, Teflon substrate and M
The stress generated due to the coefficient of thermal expansion of the MIC 203 can be relaxed.

Further, the Teflon material has a large thermal expansion coefficient as compared with the glass epoxy substrate, and a large stress is generated, so that stress relaxation is required. Here, the effect of stress relaxation is higher when the conductive adhesive 205 is thicker.

Here, the back surface of the MMIC 203 is normally used as a ground electrode, and in order to connect the ground electrode of the MMIC 203 and the ground conductor layer 202 of the multilayer substrate 101 at the shortest distance, it is effective to provide a via hole 206 directly below the MMIC 203. Is. In FIG. 2, since the first wiring layer 201a has a transmission line and the second wiring layer 201b has the ground conductor layer 202, the second wiring layer 201b serves as the ground conductor layer 202 of the multilayer substrate 101. However, when the bare chip IC 104 is mounted, the conductive adhesive 205 flows into the via holes 206 and a sufficient thickness cannot be obtained. Therefore, the thickness of the conductive adhesive 205 can be controlled by pre-filling the via holes 206 with resin. The effect of stress relaxation can be enhanced.

The via hole 2 is used in this embodiment.
Although the conductive adhesive 205 is embedded in the structure 06, the same effect can be obtained by a method of burying a conductor by plating or a method of burying an adhesive having no conductivity.

FIG. 3 shows a further stress relaxation method. Reference numeral 801 denotes an exposed portion where the uppermost Teflon substrate is selectively removed.

Only the mounting portion of the bare chip IC 104 is provided with the exposed portion 801 by selectively removing the uppermost first wiring layer 201a and the first substrate layer 101a, and the second wiring layer 2 is formed.
It is possible to manufacture a circuit with higher reliability by exposing 01b and mounting the MMIC 203 thereon.

For example, the case where the multi-layer substrate 101 is a Teflon substrate and a glass epoxy substrate and the MMIC 203 made of gallium arsenide is mounted will be described.

The coefficient of thermal expansion of the Teflon substrate is the largest, and that of the glass epoxy substrate and gallium arsenide are very small. Therefore, without providing the exposed portion 801, the MMI
When C203 is mounted on a Teflon substrate, the MMIC203 and the Teflon substrate have different thermal expansion coefficients when the temperature of the microwave integrated circuit becomes high. Therefore, thermal stress due to expansion is applied, and the MMIC is made of gallium arsenide, which is the weakest stress.
203 may be destroyed.

As a countermeasure against this, by removing the Teflon layer having a large coefficient of thermal expansion and mounting the MMIC 203 on a glass epoxy substrate having a relatively small coefficient of thermal expansion, M
It is possible to realize a highly reliable microwave integrated circuit in which the MIC 203 is not easily broken.

Next, the functional module 102 will be described. FIG. 4 shows a sectional view of the waveguide conversion module portion, and FIG. 5 shows a top view. 301 indicates a ceramic substrate, and 302
Indicates a through hole, 303 indicates a metal cover, 305 indicates a stub for radiation, 306 indicates a signal wiring, and 40
Reference numeral 2 denotes a holding electrode that connects the ground conductor layer 202 and the ceramic substrate 301.

This module is realized by forming a radiation stub 305 on the ceramic substrate 301 and mounting it on the through hole 302 formed in the multilayer substrate 101. The stub 305 on the ceramic substrate 301 and the signal wiring 306 on the multilayer substrate 101 are connected by soldering in a reflow process.

Further, in order to obtain a desired conversion efficiency, a metal cover 303 is covered above the ceramic substrate 301. The depth of the metal cover 303 is set to 1/4 or less of the wavelength used. Through holes 302 are formed in the multilayer substrate 101, the lower metal plate 108, and the housing 109, and the size thereof is equal to the inner diameter of the waveguide corresponding to the frequency used for communication.

For example, in the case of performing communication in the 26 GHz band, a WR-34 waveguide of EIA standard can be used, and the through hole 302 may have a rectangular shape of 8.6 × 4.3 mm.
The mounting position of the ceramic substrate 301 is determined by the ground conductor layer 202 on the multilayer substrate 101 and the holding electrode 402 formed on the ceramic substrate 301. In the reflow process, the ground conductor layer 202 and the ceramic substrate 301
The holding electrodes 402 are connected by solder, and the holding electrodes 402 overlap each other in a larger area at that position.

In order to improve the positional accuracy, a solder resist may be formed on either one or both of the multilayer substrate 101 and the ceramic substrate 301.

Further, although FIG. 5 shows an example in which the number of holding electrodes 402 is five, it is also effective to reduce the electrode area and increase the number to improve the positional accuracy.

Further, in this embodiment, a large number of via holes 206 are provided in order to reduce the radiation loss in the through holes 302.
Are arranged. The distance between the via holes 206 is 1/8
It is desirable that the wavelength is set to be equal to or less than the wavelength, and the plurality of rows are arranged so as to be staggered.

Although the ceramic substrate 301 is used in this embodiment, it goes without saying that the same effect can be obtained by using other dielectric layer materials.

The surface mount component 103 is roughly classified into a millimeter wave package component and an ordinary IF / power source component, and both are mounted by soldering in a reflow process.

The method for manufacturing the microwave integrated circuit will be described below.

As the first step of this embodiment, the surface mount component 103 is mounted by the reflow process. Mounting by the reflow process is a general method, and is a method with excellent mass productivity.

The second step is a cleaning step using plasma or ozone. In this microwave integrated circuit, the surface mount component 103 and the bare chip IC 104 are mixedly mounted on the multilayer substrate 101, and the wiring layer on the multilayer substrate 101 and the bare chip IC 1 are mounted.
The electrodes on 04 are connected by wires 204. At this time, if the flux or the like generated by the reflow process remains on the wiring layer and the electrodes, the bonding strength is reduced. Cleaning using plasma or ozone is performed to remove these deposits.

Generally, the deposits are mainly composed of carbon (C), and the deposits containing carbon (C) as the main component are plasmas containing oxygen (O ₂ ) as the main component and ozone ( O ₃ )
By irradiating with, it can be sublimated and removed in the form of CO _X. Plasma containing oxygen as a main component can be generated by applying a high frequency to oxygen in the atmosphere or under reduced pressure, and ozone can be easily generated by irradiating oxygen with ultraviolet rays.

The third step is mounting of the bare chip IC 104 and the functional module 102 and wire bonding. The bare chip IC 104 is mounted face-up on the ground conductor layer 202 formed on the surface of the multilayer substrate 101 with a conductive adhesive 205.

By manufacturing by the above method, it is possible to realize a high-frequency integrated circuit which is inexpensive and excellent in mass productivity.

In addition to the dielectric layer described above, B
BT resin multilayer substrate 101 in which a T resin substrate, an alumina composite substrate or a glass epoxy substrate is bonded
Alternatively, a structure in which a glass epoxy multilayer substrate 101 is formed can be similarly implemented.

Note that the same structure can be applied to a structure in which a dielectric layer film is formed on a silicon substrate. Examples of the dielectric layer film include benzocyclobutene (BCB) and polyimide.

After the conductive material is filled in the via hole 206 and cured, the thermoplastic conductive adhesive 20 is added.
5 is used to mount the bare chip IC 104, it is possible to prevent the conductive adhesive 205 from flowing into the via holes 206, control the thickness of the conductive adhesive 205, and enhance the stress relaxation effect.

The via hole 2 is used in this embodiment.
Although the conductive adhesive 205 is embedded in the structure 06, the same effect can be obtained by a method of burying a conductor by plating or a method of burying an adhesive having no conductivity.

(Second Embodiment) FIG. 6 shows a mounting portion of a bare chip IC 104 of a microwave integrated circuit of the present invention.

6 is different from the first embodiment in that the via hole 206 is not provided in the ground conductor layer 202 shown by the broken line portion directly below the bare chip IC 104, and the via hole 206 is arranged in the peripheral portion of the bare chip IC 104. Is.

In consideration of the allowable range of the electrical characteristics of the semiconductor substrate 106, the via hole 20 is formed around the semiconductor substrate 106.
By disposing 6, the via hole 206 through which the adhesive material flows does not exist immediately below the semiconductor substrate 106.
The thickness can be easily controlled, and the semiconductor substrates 106 can be mounted in parallel.

(Embodiment 3) FIG. 7 shows a schematic block diagram of a radio apparatus using the microwave integrated circuit of the present invention.
Reference numeral 601 indicates a transmission amplifier, 603 indicates a waveguide conversion function module, and 604 indicates a low noise amplifier (Low No.).
ise Amplifier: LNA), 605
Represents voltage controlled attenuation air (VVA), 606a represents an up converter, 606b represents a down converter, 607 represents an antenna, 608 represents a band pass filter (BPF), and 609 represents transmission / reception switching. Indicates a switch.

The basic signal flow will be described. Transmission IF
The signal is converted into a transmission signal in a transmission frequency band by an up converter 606a using a local oscillator (LO) signal. The transmission signal passes through the BPF 608, is amplified by the transmission amplifier 601, passes through the transmission / reception changeover switch 609, and the waveguide conversion function module 603 converts the transmission path from the microstrip line to the waveguide, and the antenna 607. Sent by. At the time of reception, the signal received by the antenna 607 is converted into a microstrip line by the waveguide conversion function module 603, passes through the transmission / reception changeover switch 609, and is transmitted by the LNA 604 and the voltage control attenuator 605 to an appropriate signal. Adjusted to level and down converter 606b L
Conversion to the IF frequency is performed using the O signal.

As described above, by constructing a wireless device using the microwave integrated circuit manufactured in the first embodiment, it is possible to realize a wireless device which is inexpensive and excellent in mass productivity.

Further, by using a plurality of the wireless devices shown in FIG. 7, the wireless device is constructed by using the microwave integrated circuit manufactured in the first embodiment, so that it is inexpensive and excellent in mass productivity. Wireless system can be realized.

[0070]

As described above, according to the present invention, the used area of the expensive ceramic substrate 301 can be reduced, and the chip components and package ICs mounted in the reflow process and the die bonding components are integrated. By using a circuit, an advantageous effect that a microwave integrated circuit having high functionality and excellent mass productivity can be realized at a small size and at a low price can be obtained.

[Brief description of drawings]

FIG. 1 is a perspective view showing a microwave integrated circuit according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing the microwave integrated circuit according to the first embodiment.

FIG. 3 is a perspective view showing a microwave integrated circuit according to the first embodiment.

FIG. 4 is a sectional view showing a waveguide conversion function module according to the first embodiment.

FIG. 5 is a top view showing the waveguide conversion function module according to the first embodiment.

FIG. 6 is a top view showing a bare chip IC mounting portion of the microwave integrated circuit according to the second embodiment.

FIG. 7 is a diagram showing a wireless device using a microwave integrated circuit according to the third embodiment.

FIG. 8 is a circuit diagram showing a conventional microwave integrated circuit.

[Explanation of symbols]

101 multilayer substrate 101a First layer substrate 101b Second layer substrate 101c Third layer substrate 102 Functional module 103 surface mount components 104 Bare chip IC 105 Plane filter 108 metal plate 109 housing 201a First wiring layer 201b Second wiring layer 201c Third wiring layer 201d Fourth wiring layer 202 Ground conductor layer 203 MMIC 204 wire 205 conductive adhesive 206 via hole 207 Flat plate capacitor 301 ceramic substrate, 302 through hole 303 metal cover 305 stub 306 signal wiring 402 holding electrode 601 transmitter amplifier 603 Waveguide conversion function module 604 LNA 605 VVA 606a up converter 606b Down converter 607 antenna 608 BPF 609 Send / receive switch 801 Exposed part

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Hiroshi Ogura             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Shin Tsubosaka             4-3-1 Tsunashima East, Kohoku Ward, Yokohama City, Kanagawa Prefecture             Matsushita Communication Industry Co., Ltd.

Claims (14)

[Claims] 1. A multi-layer substrate including at least two or more dielectric layers having different dielectric constants, at least three or more circuit wiring layers insulated by the dielectric layers, and a ground conductor layer formed on the circuit wiring layers. A surface mounting component mounted on the multilayer substrate, a via hole connecting the ground conductor layer and filled with a conductor material, and a semiconductor substrate connected to the ground conductor with a thermoplastic adhesive material. Microwave integrated circuit having. 2. The microwave integrated circuit according to claim 1, wherein the dielectric layer is a layer containing Teflon or a layer containing glass and epoxy. 3. The microwave integrated circuit according to claim 1, wherein the dielectric layer is a layer containing polyimide as a main component or a layer containing glass and epoxy. 4. The microwave integrated circuit according to claim 1, wherein the dielectric layer is a layer containing benzocyclobutene as a main component or a layer containing glass and epoxy. 5. The microwave integrated circuit according to claim 1, wherein the dielectric layer is a layer containing a liquid crystal polymer as a main component or a layer containing glass and epoxy. 6. The microwave integrated circuit according to claim 1, wherein the semiconductor substrate is mounted directly on the via hole of the ground conductor layer. 7. The microwave integrated circuit according to claim 1, wherein the semiconductor substrate is mounted in a region of the ground conductor layer surrounded by the via holes. 8. The microwave integrated circuit according to claim 6, wherein the semiconductor substrate is composed of a bare chip IC mounted face up, and is connected to a circuit wiring layer by a wire. 9. The microwave integrated circuit according to claim 8, wherein the semiconductor substrate is arranged in at least one circuit wiring layer lower than the circuit wiring layer to which the wires are connected. 10. The microwave integrated circuit according to claim 1, further comprising a functional module that is a separately formed circuit block mounted so as to cover a through hole provided in the multilayer substrate. 11. A first step of mounting a surface mounting component on a multilayer substrate by a reflow process, and a second step of cleaning the multilayer substrate on which the surface mounting component is mounted using plasma or ozone. A third step of mounting a semiconductor substrate face-up on the cleaned multi-layer substrate. 12. The second step further comprises a step of filling a via hole with a conductive adhesive and curing the via hole, and mounting the semiconductor substrate using the thermoplastic conductive adhesive.
A method for manufacturing the microwave integrated circuit described. 13. A wireless device using the microwave integrated circuit according to claim 1. 14. A radio system using the microwave integrated circuit according to claim 1. Description: