JP3557130B2 - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

Info

Publication number
JP3557130B2
JP3557130B2 JP20008799A JP20008799A JP3557130B2 JP 3557130 B2 JP3557130 B2 JP 3557130B2 JP 20008799 A JP20008799 A JP 20008799A JP 20008799 A JP20008799 A JP 20008799A JP 3557130 B2 JP3557130 B2 JP 3557130B2
Authority
JP
Japan
Prior art keywords
antenna
formed
semiconductor
semiconductor device
antenna pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP20008799A
Other languages
Japanese (ja)
Other versions
JP2001028036A (en
Inventor
茂 岡村
努 樋口
朋治 藤井
愛子 西口
雅俊 赤川
Original Assignee
新光電気工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新光電気工業株式会社 filed Critical 新光電気工業株式会社
Priority to JP20008799A priority Critical patent/JP3557130B2/en
Publication of JP2001028036A publication Critical patent/JP2001028036A/en
Application granted granted Critical
Publication of JP3557130B2 publication Critical patent/JP3557130B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a process for producing a semiconductor equipment to be used for non-contact IC card or the like.
[0002]
[Prior art]
As shown in FIG. 13, the non-contact type IC card is formed by sandwiching an antenna 10 formed in a coil shape and a semiconductor element 12 for signal transmission / reception connected to the antenna 10 with a film 14 formed in a card shape to form a thin card shape. It was formed.
The antenna 10 is formed in a predetermined coil shape by etching a conductive layer formed on the surface of an electrically insulating film. The semiconductor element 12 and the antenna 10 are electrically connected by wire bonding.
[0003]
[Problems to be solved by the invention]
In a conventional non-contact IC card, as shown in FIG. 13, the antenna 10 is arranged along the vicinity of the outer periphery of the card. This is because the communication area of the antenna 10 is determined by the area surrounded by the loop of the antenna and the number of windings of the antenna, so that a large area surrounded by the antenna 10 can be ensured.
The shape of the card type IC card is considered in consideration of the convenience of carrying and the like. However, securing a large area for arranging the antenna 10 as described above restricts miniaturization of the electronic device and restricts application to other uses.
[0004]
The present invention, in view of the characteristics of the electronic component having such a communication function, can easily reduce the size of the electronic component having the communication function, and can easily be applied to various electronic devices. and to provide a manufacturing method of a semiconductor equipment.
[0005]
[Means for Solving the Problems]
In order to achieve the above object, the present invention has the following configuration.
That is, a semiconductor wafer in which semiconductor elements are formed in a predetermined arrangement, and a large-sized antenna substrate in which an antenna pattern for signal transmission and reception is formed on an insulating substrate having electrical insulation in accordance with the arrangement of each semiconductor element, The electrode terminals of each of the semiconductor elements and the antenna pattern are electrically connected and adhered to each other to form a joined body of the semiconductor wafer and the antenna substrate. It is characterized in that one semiconductor device is obtained .
[0006]
Further , an electric insulating layer is formed on the electrode terminal forming surface of the semiconductor wafer on which the semiconductor elements are formed in a predetermined arrangement, and a via hole is formed in the electric insulating layer so that the electrode terminal is exposed on the bottom surface. Forming a conductor layer on the inner surface and the surface of the electrically insulating layer, forming an antenna pattern in accordance with the arrangement position of the semiconductor element by the conductor layer, and connecting the antenna pattern and the electrode terminal to the via hole. The semiconductor device is electrically connected via the formed via, and the semiconductor wafer on which the antenna pattern is formed is cut into semiconductor device units to obtain a semiconductor device .
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1 to 3 show a method of manufacturing an antenna substrate used when manufacturing a semiconductor device according to the present invention.
FIG. 1A is a cross-sectional view of an insulating substrate 20 with a metal foil in which a metal foil 22 is adhered to one surface of an insulating substrate 21 having electrical insulation. In the embodiment, a polyimide film is used as a base material of the insulating substrate 20 with a metal foil. A copper foil is adhered on one surface of the polyimide film, and an adhesive layer 24 made of B-staged polyimide is formed on the other surface.
[0009]
FIG. 1B shows a state in which the metal foil 22 is etched to form the antenna pattern 26. FIG. 2 is a plan view of the antenna pattern 26. In this embodiment, the entire surface of the insulating substrate 21 is formed in a coil shape. The number of turns, pattern width, pattern arrangement, etc. of the antenna pattern 26 formed on the surface of the insulating substrate 21 can be arbitrarily selected.
The method of forming the antenna pattern 26 by etching the metal foil 22 may be a usual photolithography method. A photosensitive resist is applied to the surface of the metal foil 22, exposed and developed to form a resist pattern covering a portion left as the antenna pattern 26, and a portion of the metal foil 22 exposed from the resist pattern is removed by etching. By doing so, the antenna pattern 26 is obtained.
[0010]
A semiconductor device according to the present invention forms an antenna substrate having substantially the same size as an element surface of a semiconductor element and joins the antenna substrate to the element surface of the semiconductor element to obtain a semiconductor device. As described above, when the antenna substrate is formed to have substantially the same size as the semiconductor element, it is required to form the antenna pattern 26 very finely. The method of forming the antenna pattern 26 by the etching method has an advantage that the antenna pattern 26 can be formed extremely finely and can be easily formed into an arbitrary pattern.
[0011]
FIG. 1C shows an antenna substrate 28 in which a via 30 is formed in the substrate on which the antenna pattern 26 is formed. The via 30 is formed as a connection terminal for electrically connecting the antenna pattern 26 between the layers and stacking the antenna substrate 28, and for connecting electrically to the semiconductor element when the antenna substrate 28 is joined to the semiconductor element. I do.
The via 30 can be formed by forming a via hole penetrating the antenna substrate 28 by punching and filling the through hole with a conductor material such as a conductor paste. Further, a via hole is formed on the bottom surface by irradiating a laser beam from a surface opposite to the surface on which the antenna pattern 26 is provided, and a via hole is formed by filling the via hole with a conductive material. be able to.
FIG. 3 shows a plan view of the antenna substrate 28 in which the via 30 is formed. The vias 30 are formed at both ends of the antenna pattern 26 formed in a coil shape.
[0012]
As another method of forming the via 30, the via 30 can be formed by performing punching or laser processing on the insulating substrate 20 with the metal foil on which the metal foil 22 shown in FIG. (FIG. 1D). In this case, a method of forming the antenna pattern 26 by etching the metal foil 22 after forming the via 30 and a method of forming a via hole in the insulating substrate 20 with a metal foil and etching the metal foil 22 to form the antenna pattern 26 After formation, there is a method in which a conductive material is filled in the via hole to form the via 30 and the antenna substrate 28 is obtained. Further, as another method of forming the via 30, there is a method of forming a via hole in the adhesive layer 24 and the insulating substrate 21, energizing the metal foil 22 and performing electrolytic plating, thereby filling the via hole with a conductive material. .
[0013]
The semiconductor device according to the present invention is obtained by bonding the antenna substrate 28 on which the antenna pattern 26 is formed to a semiconductor element and electrically connecting the antenna pattern 26 and the semiconductor element. When an element having a function of transmitting and receiving signals, such as an IC card, is used as a semiconductor element, a non-contact communication semiconductor device having an antenna in the semiconductor device can be obtained.
[0014]
FIG. 4 is a perspective view of an embodiment of a semiconductor device in which an antenna substrate 28 is integrally formed with a semiconductor element 40 by bonding, and FIG. 5 is a cross-sectional view.
As shown in FIG. 5, the back surface of the antenna substrate 28, that is, the surface opposite to the surface on which the antenna pattern 26 is formed is adhered to the element surface of the semiconductor element 40 to electrically connect the semiconductor element 40 and the antenna pattern 26. . Therefore, the electrode terminals 42 of the semiconductor element 40 are aligned with the vias 30 of the antenna substrate 28, and the antenna substrate 28 and the semiconductor element 40 are bonded using the anisotropic conductive adhesive film 43. By using the anisotropic conductive adhesive film 43, the electrode terminals 42 and the vias 30 are electrically connected, and the antenna substrate 28 and the semiconductor element 40 are integrally bonded.
[0015]
Instead of using the anisotropic conductive adhesive film 43, the electrode terminals 42 and the vias 30 are connected via bumps, and the gap between the antenna substrate 28 and the semiconductor element 40 is filled with an adhesive and bonded together. It is also possible.
When the antenna substrate 28 is bonded to the semiconductor element 40 using the anisotropic conductive adhesive film or the anisotropic conductive adhesive as described above, it is not necessary to form the adhesive layer 24 on the antenna substrate 28 shown in FIG. . When the via 30 is formed using a conductive resin (conductive adhesive) having an adhesive property on the antenna substrate 28 shown in FIG. 1, the adhesive layer 24 is bonded to the active surface of the semiconductor element 40, By bonding the via 30 to the electrode terminal 42, the semiconductor device shown in FIGS.
[0016]
FIG. 6 shows a method of manufacturing a semiconductor device by bonding a multilayer antenna substrate 32 having a multilayer antenna pattern 26 to a semiconductor element 40 as another method of manufacturing a semiconductor device. FIG. 6A shows a state in which a plurality of antenna substrates 28 on which a predetermined antenna pattern 26 is formed are stacked. Since the adhesive layer 24 is formed on each antenna substrate 28, the antenna substrate 28 is positioned and heated / pressed to obtain a multilayer antenna substrate 32 on which the antenna pattern 26 is formed in multiple layers.
The antenna patterns 26 and the vias 30 are designed such that the antenna patterns 26 are electrically connected between the layers when the respective antenna substrates 32 are stacked and integrated.
[0017]
FIG. 7 shows an example of the antenna pattern 26 provided on the antenna substrate 28. Reference numerals 26a, 26b, and 26c denote antenna patterns 26 provided on the first, second, and third antenna substrates 28, respectively. The via 30 is arranged so that these antenna patterns 26a, 26b, 26c are connected in a one-stroke form. Then, both ends of the antenna are electrically connected to the semiconductor element 40 via the vias 30.
[0018]
FIG. 6B shows a state in which the multilayer antenna substrate 32 is positioned and joined to the semiconductor element 40. The antenna substrate 32 and the semiconductor element 40 are joined together by electrically connecting the via 30 and the electrode terminal 42 via an anisotropic conductive adhesive film or a bump or the like. The form in which the multilayer antenna substrate 32 is joined to the semiconductor element 40 is the same as the semiconductor device shown in FIG. The multilayer antenna substrate 32 is joined to one surface of the semiconductor element 40 to form a chip-sized semiconductor device.
[0019]
As described above, since the antenna pattern 26 can be formed in an arbitrary pattern and in an extremely fine pattern, an area where the antenna pattern 26 is arranged is a small area as in the case of being incorporated in a chip-size semiconductor device. Even in a limited case, the semiconductor device can be provided as a semiconductor device having required antenna characteristics. Further, by appropriately selecting the number of layers of the multilayer antenna substrate 32 on which the antenna substrates 28 are stacked, or by appropriately designing the antenna pattern, the semiconductor device can be provided as a semiconductor device having further characteristics according to the product. It becomes.
[0020]
In the above embodiment, the semiconductor device is formed by joining the single-layer antenna substrate 28 or the multilayer antenna substrate 32 formed individually to the single semiconductor element 40. As described above, instead of handling the single semiconductor element 40 and the antenna substrates 28 and 32, a large-sized antenna substrate on which a predetermined antenna pattern is formed in advance is bonded to a semiconductor wafer on which semiconductor elements used for signal transmission and reception are formed. It is also possible to obtain an individual semiconductor device by slicing the joined body of the wafer and the antenna substrate.
[0021]
An antenna pattern is formed on a large-sized antenna substrate to be joined to a semiconductor wafer by aligning the individual semiconductor elements formed on the semiconductor wafer with each other. Are electrically connected and joined. A large-sized antenna substrate has an advantage that a series of operations such as forming the antenna pattern 26 by etching can be efficiently performed, and a semiconductor device having a chip size similar to that shown in FIG. Obtainable.
[0022]
As described above, as a method of forming a semiconductor device having substantially the same size as a semiconductor element by combining a semiconductor element and an antenna substrate, in addition to combining a single semiconductor element and an antenna substrate, the following methods are possible. It is. That is, as in the above example, a method of manufacturing a semiconductor wafer by combining a large-sized antenna substrate, a method of manufacturing a semiconductor wafer by combining an antenna substrate formed in a piece, and a method of combining a large-sized antenna board with a piece of semiconductor element. Manufacturing method.
[0023]
FIG. 8 shows still another method of manufacturing a semiconductor device. In the present embodiment, the antenna substrate 28 having the antenna pattern 26 formed on both surfaces of the insulating substrate 21 is laminated to form a multilayer antenna pattern 26, and the semiconductor element 40 and the antenna pattern 26 are electrically connected by wire bonding. It is characterized by the following.
FIG. 8A shows a method of forming a multilayer antenna substrate by bonding an antenna substrate 28 having an antenna pattern 26 formed on both surfaces of an insulating substrate 21 with an adhesive sheet 34. The antenna substrate 28 forms the antenna pattern 26 on both surfaces of the insulating substrate 21 by etching the metal foil on both surfaces of the insulating substrate with a metal foil in which the metal foil is applied to both surfaces of the insulating substrate 21, and punches the insulating substrate 21. The via hole is formed by filling the via hole with a conductive material.
[0024]
The adhesive sheet 34 for bonding the antenna substrate 28 is provided with a through hole at a portion where the adjacent antenna patterns 26 are electrically connected, and the through hole is filled with a conductive adhesive 36. By bonding the antenna substrate 28 via the adhesive sheet 34, the antenna patterns 26 of the adjacent layers are electrically connected only at the portion where the adhesive sheet 34 is formed, and the antenna substrate 28 is integrally bonded.
Of course, instead of using the adhesive sheet 34, it is also possible to electrically connect and join the antenna substrates 28, 28 using an anisotropic conductive adhesive film as described above.
[0025]
FIG. 8B shows a state in which the semiconductor element 40 is mounted on the antenna substrate 32 formed by laminating the antenna substrates 28 to form a multilayer, and the semiconductor element 40 and the antenna pattern 26 of the antenna substrate 32 are electrically connected. The semiconductor element 40 and the antenna pattern 26 are connected by wire bonding. 44 is a bonding wire, and 38 is a bonding pad provided on the antenna substrate 28. After the wire bonding, the bonding wire 44, the bonding portion between the bonding wire 44 and the antenna substrate 28, the outer surface of the semiconductor element 40, and the like are sealed by potting or the like.
[0026]
FIG. 9 shows a configuration of the semiconductor device shown in FIG. 8 in which the antenna pattern 26 provided in each layer is electrically connected to the semiconductor element 40 and the antenna pattern 26. The antenna pattern 26 is connected in a one-stroke form as in the above-described embodiment.
In the embodiment, the semiconductor element 40 is formed smaller than the outer dimensions of the multilayer antenna substrate 32, and the semiconductor element 40 and the bonding pads 38 provided on the antenna pattern 26 are wire-bonded. After wire bonding, it is also possible to seal the outer surface of the semiconductor element 40 including the bonding wire 44 by potting a resin.
[0027]
When the semiconductor element 40 and the antenna substrate 32 have the same size, similarly to the method shown in FIG. 6, the semiconductor element 40 and the antenna pattern 26 are electrically connected by an anisotropic conductive adhesive or a bump. And can be joined together. In the embodiment, only the bonding pad 38 is provided on the surface of the antenna substrate 32 on which the semiconductor element 40 is mounted. However, the antenna pattern 26 is also routed on the surface on which the semiconductor element 40 is mounted, and A bonding pad 38 may be provided. In this case, the antenna patterns 26 are formed on both sides of the stacked antenna substrates 28 and 28.
[0028]
FIG. 10 shows still another embodiment of the semiconductor device. The semiconductor device according to the present embodiment is characterized in that an antenna substrate 28 is bonded to a surface on which an electrode terminal is formed of a semiconductor element 40 with the surface on which the antenna pattern 26 is formed facing. By joining the semiconductor element 40 and the antenna substrate 28 using, for example, an anisotropic conductive adhesive film, the electrode terminal 42 and only the terminal 27 of the antenna pattern 26 can be electrically connected and joined. In the case of this semiconductor device, there is an advantage that it is not necessary to form a via 30 for electrical connection in the antenna substrate 28.
[0029]
FIG. 11 shows still another configuration of the semiconductor device according to the present invention. In FIG. 11A, a multilayer antenna substrate 32 is bonded to the surface of the semiconductor element 40 on which the electrode terminals 42 are formed, and the antenna pattern 26 of the first-layer antenna substrate 28 and the electrode terminals 42 are connected by wire bonding. It is an example. Vias 30 are used to electrically connect the antenna patterns 26 between the layers. FIG. 11B shows an example in which the antenna substrates 28 are stacked in a stepwise manner, and the antenna pattern 26 is electrically connected between the layers by wire bonding for each layer. Also in this embodiment, the bonding wires 44 and the bonding portions between the bonding wires 44 and the antenna substrate 28 are sealed by potting or the like.
[0030]
As described above, there are various methods for obtaining a semiconductor device by bonding the antenna substrate and the semiconductor element 40, and the antenna substrate and the antenna pattern formed on the antenna substrate can be formed in any shape. It is. This allows a design according to the characteristics of the product. Further, in the semiconductor device of the above example, a single semiconductor element 40 is mounted in the semiconductor device, but a plurality of semiconductor elements 40 are mounted in one semiconductor device by sandwiching the antenna substrates 28 and 32 between intermediate layers. It is also possible.
[0031]
The semiconductor device of the above embodiment is obtained as a semiconductor device having an antenna for transmitting and receiving signals by bonding an antenna substrate formed separately from the semiconductor element 40 to the electrode terminal forming surface of the semiconductor element 40. is there.
FIG. 12 shows a method of manufacturing a semiconductor device by directly forming an antenna pattern 26 on an electrode terminal forming surface of a semiconductor element as another embodiment of a semiconductor device having an antenna for signal transmission / reception. In this manufacturing method, a required processing is performed on the semiconductor wafer 50 on which the semiconductor element for signal transmission / reception is formed to obtain a semiconductor device in which an antenna pattern is incorporated.
[0032]
FIG. 12A shows a semiconductor wafer 50 on which semiconductor elements are formed in a predetermined arrangement. Reference numeral 52 denotes an electrode terminal electrically connected to the antenna pattern in each semiconductor element.
FIG. 12B shows a state in which an electrical insulating layer 54 is first formed to form an antenna pattern on the electrode terminal formation surface. The electrical insulating layer 54 can be formed by coating the electrode terminal forming surface of the semiconductor wafer 50 with a resin material such as a polyimide resin, or by bonding an adhesive resin film.
[0033]
FIG. 12C shows a state in which a via hole 56 for exposing the electrode terminal 52 is formed on the bottom surface of the electrically insulating layer 54. The via hole 56 can be formed by a method of irradiating the electrical insulating layer 54 with laser light, a method of performing chemical etching, or the like.
FIG. 12D shows a state in which the conductor layer 58 is formed on the inner surface of the via hole 56 and the entire surface of the electrical insulating layer 54. The conductor layer 58 becomes a conductor portion of the antenna pattern, and also becomes a via 60 that fills the via hole 56 and electrically connects the electrode terminal 52 to the antenna pattern. Therefore, the conductor layer 58 is formed to have a thickness necessary for these conductor portions.
[0034]
FIG. 12E shows a state in which the conductor pattern 58 is etched to form the antenna pattern 26 on the surface of the electrical insulating layer 54. The antenna pattern 26 is formed in a predetermined pattern in accordance with the arrangement position of the semiconductor element on the semiconductor wafer 50. The antenna pattern 26 can be formed by forming a resist pattern covering only the portion left as the antenna pattern 26 on the surface of the conductor layer 58 and etching the conductor layer 58 using this resist pattern as a mask. In the case of the semi-additive method, after a thin conductor layer is formed as a plating power supply layer, a resist pattern exposing a portion to be formed as an antenna pattern is formed, and the conductor portion is formed by electroplating, and then the resist is formed. The antenna pattern 26 having a predetermined pattern can be formed by removing the pattern and etching and removing the thin conductive layer covered with the resist pattern.
[0035]
When the antenna pattern 26 provided on the surface of the semiconductor element has only one layer, the surface of the antenna pattern 26 is covered with a protective film 62 as shown in FIG. 12E or as shown in FIG. Then, the semiconductor wafer 50 is sliced into individual pieces. Thus, a chip-sized semiconductor device in which the antenna pattern 26 is formed on the electrode terminal forming surface is obtained. In FIG. 12F, the line AA is a position where the semiconductor wafer 50 is cut.
[0036]
When the antenna pattern 26 is formed by laminating a plurality of layers, an electric insulating layer similar to the electric insulating layer 54 is formed instead of the protective film 62, and the antenna pattern 26 of the first layer is formed. Similarly, the antenna pattern of the next layer is formed. That is, a via hole is formed in the second electrically insulating layer, a conductor layer is formed by sputtering or the like, and the conductor layer is etched to form a second antenna pattern. The antenna patterns 26 of the first and second layers can be electrically connected via vias formed in the electrically insulating layer. The form of the antenna pattern 26 and the electrical connection between layers are the same as in the form shown in FIG.
[0037]
As shown in FIG. 12, a method of forming the antenna pattern 26 on the electrode terminal formation surface of the semiconductor wafer 50 via the electrical insulating layer 54 includes forming the antenna pattern 26 into a fine pattern, There are advantages in that the semiconductor device can be easily formed by laminating the layers, and that a semiconductor device can be efficiently manufactured by performing operations such as exposure and development on the semiconductor wafer 50.
The semiconductor device obtained by slicing the semiconductor wafer 50 has the antenna pattern 26 formed on the electrode terminal forming surface of the semiconductor element 40 by being electrically connected to the electrode terminal 52.
[0038]
As described above, the semiconductor device according to the present invention is formed to have substantially the same size as the semiconductor element 40, and is formed extremely small as a semiconductor device having an antenna for transmitting and receiving signals. Therefore, even when used as a non-contact type IC card, it is not necessary to use a conventional card shape, and it is possible to use a stamp size or a smaller size. Further, by forming the IC as an IC with an antenna incorporated therein, signals can be transmitted and received between the ICs in a non-contact manner. This eliminates the need for wiring for connecting the ICs, and can be used for various applications such as miniaturization of the mounting board on which the IC is mounted.
[0039]
According to the method for manufacturing a semiconductor device according to the present invention, a semiconductor device is obtained by forming a joined body of a semiconductor wafer and an antenna substrate, or a semiconductor wafer having an antenna pattern formed on a semiconductor device basis. by obtaining the semiconductor device is cut, it is possible to easily and efficiently produce a very small semiconductor equipment comprising an antenna for communication.
[Brief description of the drawings]
FIG. 1 is an explanatory view showing a method for manufacturing an antenna substrate used for a semiconductor device according to the present invention.
FIG. 2 is a plan view showing a state where an antenna pattern is formed on an insulating substrate.
FIG. 3 is a plan view showing a state where vias are formed in an antenna substrate.
FIG. 4 is a perspective view showing an embodiment of a semiconductor device according to the present invention.
5 is a cross-sectional view of the semiconductor device shown in FIG.
FIG. 6 is an explanatory diagram illustrating a method for forming a semiconductor device using a multilayer antenna substrate.
FIG. 7 is an explanatory diagram showing a pattern example of an antenna pattern.
FIG. 8 is an explanatory view showing another method of manufacturing the semiconductor device according to the present invention.
FIG. 9 is an explanatory diagram showing a pattern example of an antenna pattern.
FIG. 10 is a cross-sectional view showing still another configuration example of the semiconductor device according to the present invention.
FIG. 11 is a cross-sectional view showing still another example of the configuration of the semiconductor device according to the present invention.
FIG. 12 is an explanatory view showing still another method of manufacturing a semiconductor device according to the present invention.
FIG. 13 is an explanatory diagram showing a configuration of a conventional IC card.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Antenna 12 Semiconductor element 14 Film 20 Insulating substrate 21 with metal foil 21 Insulating substrate 22 Metal foil 24 Adhesive layers 26, 26a, 26b, 26c Antenna patterns 28, 32 Antenna substrate 30 Via 34 Adhesive sheet 36 Conductive adhesive 38 Bonding pad Reference Signs List 40 semiconductor element 42, 52 electrode terminal 43 anisotropic conductive adhesive film 44 bonding wire 50 semiconductor wafer 54 electrical insulating layer 56 via hole 58 conductive layer 60 via 62 protective film

Claims (2)

  1. A semiconductor wafer on which semiconductor elements are formed in a predetermined arrangement;
    A large-sized antenna substrate in which an antenna pattern for signal transmission / reception is formed on an insulating substrate having electrical insulation in accordance with the arrangement of the semiconductor elements, the electrode terminals of the respective semiconductor elements and the antenna pattern After electrically connecting and bonding to form a bonded body between the semiconductor wafer and the antenna substrate,
    A method of manufacturing a semiconductor device , wherein the joined body is cut into semiconductor device units to obtain individual semiconductor devices .
  2. Forming an electrical insulating layer on the electrode terminal formation surface of the semiconductor wafer on which the semiconductor elements are formed in a predetermined arrangement;
    Forming a via hole in the electrical insulating layer where the electrode terminal is exposed on the bottom surface;
    Forming a conductor layer on the inner surface of the via hole and the surface of the electrical insulating layer,
    An antenna pattern is formed in accordance with the arrangement position of the semiconductor element by the conductor layer, and the antenna pattern and the electrode terminal are electrically connected to each other via a via formed in the via hole.
    A method of manufacturing a semiconductor device , comprising: cutting a semiconductor wafer on which the antenna pattern is formed into semiconductor devices to obtain a semiconductor device .
JP20008799A 1999-07-14 1999-07-14 Method for manufacturing semiconductor device Expired - Fee Related JP3557130B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20008799A JP3557130B2 (en) 1999-07-14 1999-07-14 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20008799A JP3557130B2 (en) 1999-07-14 1999-07-14 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JP2001028036A JP2001028036A (en) 2001-01-30
JP3557130B2 true JP3557130B2 (en) 2004-08-25

Family

ID=16418648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20008799A Expired - Fee Related JP3557130B2 (en) 1999-07-14 1999-07-14 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP3557130B2 (en)

Families Citing this family (119)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003006594A (en) * 2001-06-22 2003-01-10 Toppan Forms Co Ltd Formation method for rf-id medium using both-side tape
JP2003044819A (en) * 2001-07-31 2003-02-14 Toppan Forms Co Ltd Recording medium and method for manufacturing the same
JP4963538B2 (en) * 2004-08-19 2012-06-27 テセラ・インターコネクト・マテリアルズ,インコーポレイテッド Integrated circuit device
JP4628835B2 (en) * 2005-03-24 2011-02-09 トッパン・フォームズ株式会社 Communication circuit holder
JP4750455B2 (en) * 2005-04-15 2011-08-17 富士通フロンテック株式会社 RFID tag set, RFID tag, and RFID tag component
US7519328B2 (en) 2006-01-19 2009-04-14 Murata Manufacturing Co., Ltd. Wireless IC device and component for wireless IC device
JP4997779B2 (en) * 2006-02-13 2012-08-08 大日本印刷株式会社 Contactless data carrier
DE112007000799B4 (en) 2006-04-10 2013-10-10 Murata Mfg. Co., Ltd. Wireless IC device
KR100968347B1 (en) 2006-04-14 2010-07-08 가부시키가이샤 무라타 세이사쿠쇼 Antenna
US9064198B2 (en) 2006-04-26 2015-06-23 Murata Manufacturing Co., Ltd. Electromagnetic-coupling-module-attached article
JP4803253B2 (en) 2006-04-26 2011-10-26 株式会社村田製作所 Article with power supply circuit board
CN101454992B (en) 2006-05-26 2015-07-15 株式会社村田制作所 Data coupler
CN101460964B (en) 2006-06-01 2011-09-21 株式会社村田制作所 Wireless IC device and wireless IC device composite component
JP4983794B2 (en) 2006-06-12 2012-07-25 株式会社村田製作所 Electromagnetic coupling module, wireless IC device inspection system, electromagnetic coupling module using the same, and method of manufacturing wireless IC device
JP5200338B2 (en) * 2006-06-15 2013-06-05 ソニー株式会社 RFID tags and products
JP4281850B2 (en) 2006-06-30 2009-06-17 株式会社村田製作所 optical disk
JP4957724B2 (en) 2006-07-11 2012-06-20 株式会社村田製作所 Antenna and wireless IC device
DE112007001912T5 (en) 2006-08-24 2009-07-30 Murata Mfg. Co., Ltd., Nagaokakyo-shi High frequency IC device test system and method of making high frequency IC devices using same
JP4775442B2 (en) 2006-09-26 2011-09-21 株式会社村田製作所 Article with electromagnetic coupling module
JP4907286B2 (en) * 2006-09-29 2012-03-28 東洋アルミニウム株式会社 Circuit structure and manufacturing method thereof
EP2056488B1 (en) 2006-10-27 2014-09-03 Murata Manufacturing Co. Ltd. Article with electromagnetically coupled module
JP4835696B2 (en) 2007-01-26 2011-12-14 株式会社村田製作所 Container with electromagnetic coupling module
WO2008096576A1 (en) 2007-02-06 2008-08-14 Murata Manufacturing Co., Ltd. Packing material provided with electromagnetically coupled module
WO2008126458A1 (en) 2007-04-06 2008-10-23 Murata Manufacturing Co., Ltd. Radio ic device
US8009101B2 (en) 2007-04-06 2011-08-30 Murata Manufacturing Co., Ltd. Wireless IC device
WO2008126649A1 (en) 2007-04-09 2008-10-23 Murata Manufacturing Co., Ltd. Wireless ic device
CN102982366B (en) 2007-04-26 2016-04-13 株式会社村田制作所 Wireless IC device
EP2141636B1 (en) 2007-04-27 2012-02-01 Murata Manufacturing Co. Ltd. Wireless ic device
JP4666101B2 (en) 2007-04-27 2011-04-06 株式会社村田製作所 Wireless IC device
WO2008142957A1 (en) 2007-05-10 2008-11-27 Murata Manufacturing Co., Ltd. Wireless ic device
WO2008140037A1 (en) 2007-05-11 2008-11-20 Murata Manufacturing Co., Ltd. Wireless ic device
KR101062124B1 (en) 2007-06-27 2011-09-02 가부시키가이샤 무라타 세이사쿠쇼 Wireless IC devices
US7762472B2 (en) 2007-07-04 2010-07-27 Murata Manufacturing Co., Ltd Wireless IC device
US8235299B2 (en) 2007-07-04 2012-08-07 Murata Manufacturing Co., Ltd. Wireless IC device and component for wireless IC device
EP2166617B1 (en) 2007-07-09 2015-09-30 Murata Manufacturing Co. Ltd. Wireless ic device
EP2166490B1 (en) 2007-07-17 2015-04-01 Murata Manufacturing Co. Ltd. Wireless ic device and electronic apparatus
JP4434311B2 (en) 2007-07-18 2010-03-17 株式会社村田製作所 Wireless IC device and manufacturing method thereof
US20090021352A1 (en) 2007-07-18 2009-01-22 Murata Manufacturing Co., Ltd. Radio frequency ic device and electronic apparatus
US7830311B2 (en) 2007-07-18 2010-11-09 Murata Manufacturing Co., Ltd. Wireless IC device and electronic device
JP5104865B2 (en) 2007-07-18 2012-12-19 株式会社村田製作所 Wireless IC device
EP2096709B1 (en) 2007-12-20 2012-04-25 Murata Manufacturing Co., Ltd. Radio ic device
EP2557528A3 (en) 2007-12-26 2017-01-18 Murata Manufacturing Co., Ltd. Antenna device and wireless IC device
WO2009110382A1 (en) 2008-03-03 2009-09-11 株式会社村田製作所 Composite antenna
EP2251934B1 (en) 2008-03-03 2018-05-02 Murata Manufacturing Co. Ltd. Wireless ic device and wireless communication system
CN101960665B (en) 2008-03-26 2014-03-26 株式会社村田制作所 Radio IC device
WO2009128437A1 (en) 2008-04-14 2009-10-22 株式会社村田製作所 Radio ic device, electronic device, and method for adjusting resonance frequency of radio ic device
JP4609604B2 (en) 2008-05-21 2011-01-12 株式会社村田製作所 Wireless IC device
WO2009142068A1 (en) 2008-05-22 2009-11-26 株式会社村田製作所 Wireless ic device and method for manufacturing the same
EP2290586B1 (en) 2008-05-26 2014-06-25 Murata Manufacturing Co., Ltd. Wireless ic device system and method for authenticating wireless ic device
EP2282372B1 (en) 2008-05-28 2019-09-11 Murata Manufacturing Co. Ltd. Wireless ic device and component for a wireless ic device
JP4557186B2 (en) 2008-06-25 2010-10-06 株式会社村田製作所 Wireless IC device and manufacturing method thereof
WO2010001987A1 (en) 2008-07-04 2010-01-07 株式会社村田製作所 Wireless ic device
JP5434920B2 (en) 2008-08-19 2014-03-05 株式会社村田製作所 Wireless IC device and manufacturing method thereof
US9675443B2 (en) 2009-09-10 2017-06-13 Johnson & Johnson Vision Care, Inc. Energized ophthalmic lens including stacked integrated components
JP5429182B2 (en) 2008-10-24 2014-02-26 株式会社村田製作所 Wireless IC device
JP4525869B2 (en) 2008-10-29 2010-08-18 株式会社村田製作所 Wireless IC device
DE112009002384T5 (en) 2008-11-17 2012-05-16 Murata Manufacturing Co., Ltd. Antenna and wireless ic component
CN103500873B (en) 2009-01-09 2016-08-31 株式会社村田制作所 Wireless ic device and wireless ic module
WO2010082413A1 (en) 2009-01-16 2010-07-22 株式会社村田製作所 High frequency device and wireless ic device
WO2010087429A1 (en) 2009-01-30 2010-08-05 株式会社村田製作所 Antenna and wireless ic device
JP5510450B2 (en) 2009-04-14 2014-06-04 株式会社村田製作所 Wireless IC device
CN103022661B (en) 2009-04-21 2014-12-03 株式会社村田制作所 Antenna apparatus and resonant frequency setting method of same
WO2010140429A1 (en) 2009-06-03 2010-12-09 株式会社村田製作所 Wireless ic device and production method thereof
JP5516580B2 (en) 2009-06-19 2014-06-11 株式会社村田製作所 Wireless IC device and method for coupling power feeding circuit and radiation plate
CN102474009B (en) 2009-07-03 2015-01-07 株式会社村田制作所 Antenna and antenna module
WO2011037234A1 (en) 2009-09-28 2011-03-31 株式会社村田製作所 Wireless ic device and method for detecting environmental conditions using same
CN102577646B (en) 2009-09-30 2015-03-04 株式会社村田制作所 Circuit substrate and method of manufacture thereof
JP5304580B2 (en) 2009-10-02 2013-10-02 株式会社村田製作所 Wireless IC device
JP5522177B2 (en) 2009-10-16 2014-06-18 株式会社村田製作所 Antenna and wireless IC device
JP5418600B2 (en) 2009-10-27 2014-02-19 株式会社村田製作所 Transceiver and RFID tag reader
CN102549838B (en) 2009-11-04 2015-02-04 株式会社村田制作所 Communication terminal and information processing system
WO2011055701A1 (en) 2009-11-04 2011-05-12 株式会社村田製作所 Communication terminal and information processing system
EP2498207B1 (en) 2009-11-04 2014-12-31 Murata Manufacturing Co., Ltd. Wireless ic tag, reader/writer, and information processing system
GB2487491B (en) 2009-11-20 2014-09-03 Murata Manufacturing Co Antenna device and mobile communication terminal
JP4978756B2 (en) 2009-12-24 2012-07-18 株式会社村田製作所 Communication terminal
CN102792520B (en) 2010-03-03 2017-08-25 株式会社村田制作所 Wireless communication module and Wireless Telecom Equipment
JP5403146B2 (en) 2010-03-03 2014-01-29 株式会社村田製作所 Wireless communication device and wireless communication terminal
WO2011111509A1 (en) 2010-03-12 2011-09-15 株式会社村田製作所 Radio communication device and metallic article
CN102668241B (en) 2010-03-24 2015-01-28 株式会社村田制作所 Rfid system
WO2011122163A1 (en) 2010-03-31 2011-10-06 株式会社村田製作所 Antenna and wireless communication device
JP5170156B2 (en) 2010-05-14 2013-03-27 株式会社村田製作所 Wireless IC device
JP5299351B2 (en) 2010-05-14 2013-09-25 株式会社村田製作所 Wireless IC device
JP5376060B2 (en) 2010-07-08 2013-12-25 株式会社村田製作所 Antenna and RFID device
GB2495418B (en) 2010-07-28 2017-05-24 Murata Manufacturing Co Antenna apparatus and communication terminal instrument
WO2012020748A1 (en) 2010-08-10 2012-02-16 株式会社村田製作所 Printed wire board and wireless communication system
JP5234071B2 (en) 2010-09-03 2013-07-10 株式会社村田製作所 RFIC module
JP5630506B2 (en) 2010-09-30 2014-11-26 株式会社村田製作所 Wireless IC device
WO2012050037A1 (en) 2010-10-12 2012-04-19 株式会社村田製作所 Antenna apparatus and communication terminal apparatus
GB2501385B (en) 2010-10-21 2015-05-27 Murata Manufacturing Co Communication terminal device
JP5510560B2 (en) 2011-01-05 2014-06-04 株式会社村田製作所 Wireless communication device
CN103299325B (en) 2011-01-14 2016-03-02 株式会社村田制作所 RFID chip package and RFID label tag
CN103119786B (en) 2011-02-28 2015-07-22 株式会社村田制作所 Wireless communication device
US8950862B2 (en) 2011-02-28 2015-02-10 Johnson & Johnson Vision Care, Inc. Methods and apparatus for an ophthalmic lens with functional insert layers
WO2012121185A1 (en) 2011-03-08 2012-09-13 株式会社村田製作所 Antenna device and communication terminal apparatus
US9698129B2 (en) 2011-03-18 2017-07-04 Johnson & Johnson Vision Care, Inc. Stacked integrated component devices with energization
US9914273B2 (en) 2011-03-18 2018-03-13 Johnson & Johnson Vision Care, Inc. Method for using a stacked integrated component media insert in an ophthalmic device
US10451897B2 (en) 2011-03-18 2019-10-22 Johnson & Johnson Vision Care, Inc. Components with multiple energization elements for biomedical devices
US9804418B2 (en) 2011-03-21 2017-10-31 Johnson & Johnson Vision Care, Inc. Methods and apparatus for functional insert with power layer
EP2618424A4 (en) 2011-04-05 2014-05-07 Murata Manufacturing Co Wireless communication device
JP5482964B2 (en) 2011-04-13 2014-05-07 株式会社村田製作所 Wireless IC device and wireless communication terminal
WO2012157596A1 (en) 2011-05-16 2012-11-22 株式会社村田製作所 Wireless ic device
JP5488767B2 (en) 2011-07-14 2014-05-14 株式会社村田製作所 Wireless communication device
WO2013011856A1 (en) 2011-07-15 2013-01-24 株式会社村田製作所 Wireless communication device
CN204189963U (en) 2011-07-19 2015-03-04 株式会社村田制作所 Antenna assembly and communication terminal
WO2013035821A1 (en) 2011-09-09 2013-03-14 株式会社村田製作所 Antenna device and wireless device
WO2013080991A1 (en) 2011-12-01 2013-06-06 株式会社村田製作所 Wireless ic device and method for manufacturing same
EP2688145A1 (en) 2012-01-30 2014-01-22 Murata Manufacturing Co., Ltd. Wireless ic device
JP5464307B2 (en) 2012-02-24 2014-04-09 株式会社村田製作所 Antenna device and wireless communication device
JP5304975B1 (en) 2012-04-13 2013-10-02 株式会社村田製作所 RFID tag inspection method and inspection apparatus
US10361405B2 (en) 2014-08-21 2019-07-23 Johnson & Johnson Vision Care, Inc. Biomedical energization elements with polymer electrolytes
US10627651B2 (en) 2014-08-21 2020-04-21 Johnson & Johnson Vision Care, Inc. Methods and apparatus to form biocompatible energization primary elements for biomedical devices with electroless sealing layers
US9599842B2 (en) 2014-08-21 2017-03-21 Johnson & Johnson Vision Care, Inc. Device and methods for sealing and encapsulation for biocompatible energization elements
US9383593B2 (en) 2014-08-21 2016-07-05 Johnson & Johnson Vision Care, Inc. Methods to form biocompatible energization elements for biomedical devices comprising laminates and placed separators
US9715130B2 (en) 2014-08-21 2017-07-25 Johnson & Johnson Vision Care, Inc. Methods and apparatus to form separators for biocompatible energization elements for biomedical devices
US10381687B2 (en) 2014-08-21 2019-08-13 Johnson & Johnson Vision Care, Inc. Methods of forming biocompatible rechargable energization elements for biomedical devices
US10361404B2 (en) 2014-08-21 2019-07-23 Johnson & Johnson Vision Care, Inc. Anodes for use in biocompatible energization elements
US9793536B2 (en) 2014-08-21 2017-10-17 Johnson & Johnson Vision Care, Inc. Pellet form cathode for use in a biocompatible battery
US9941547B2 (en) 2014-08-21 2018-04-10 Johnson & Johnson Vision Care, Inc. Biomedical energization elements with polymer electrolytes and cavity structures
US10345620B2 (en) 2016-02-18 2019-07-09 Johnson & Johnson Vision Care, Inc. Methods and apparatus to form biocompatible energization elements incorporating fuel cells for biomedical devices

Also Published As

Publication number Publication date
JP2001028036A (en) 2001-01-30

Similar Documents

Publication Publication Date Title
TWI491018B (en) Semiconductor package and manufacturing method thereof
US8381394B2 (en) Circuit board with embedded component and method of manufacturing same
TWI437647B (en) Thermally enhanced semiconductor assembly with bump/base/flange heat spreader and build-up circuitry
CN102074552B (en) Semiconductor device packages and manufacturing methods thereof
US8222747B2 (en) Multilayer wiring substrate mounted with electronic component and method for manufacturing the same
US6861284B2 (en) Semiconductor device and production method thereof
US6406990B1 (en) Method of mounting a semiconductor chip, circuit board for flip-chip connection and method of manufacturing the same, electromagnetic wave readable data carrier and method of manufacturing the same, and electronic component module for an electromagnetic wave readable data carrier
KR101655897B1 (en) A microelectronic assembly and a method of fabricating a stacked microelectronic assembly
KR100773615B1 (en) Semiconductor device and manufacturing method therefor
US7053475B2 (en) Semiconductor device and manufacturing method therefor
JP3709882B2 (en) Circuit module and manufacturing method thereof
EP0567814B1 (en) Printed circuit board for mounting semiconductors and other electronic components
EP1683198B1 (en) Semiconductor device and manufacturing method thereof
JP4716038B2 (en) Electronic component and manufacturing method thereof
KR100533673B1 (en) Semiconductor device, method of manufacture thereof, circuit board, and electronic device
US4941033A (en) Semiconductor integrated circuit device
JP3813402B2 (en) Manufacturing method of semiconductor device
KR100878649B1 (en) Electronic device substrate, electronic device and methods for fabricating the same
US8238109B2 (en) Flex-rigid wiring board and electronic device
TW472330B (en) Semiconductor device and the manufacturing method thereof
US7791206B2 (en) Semiconductor device and method of manufacturing the same
JP4592751B2 (en) Method for manufacturing printed wiring board
JP4298559B2 (en) Electronic component mounting structure and manufacturing method thereof
KR100514558B1 (en) Semiconductor device, method of manufacture thereof, circuit board, and electronic device
US6353420B1 (en) Wireless article including a plural-turn loop antenna

Legal Events

Date Code Title Description
A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20040120

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040219

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040406

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20040409

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20040511

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20040514

R150 Certificate of patent or registration of utility model

Ref document number: 3557130

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090521

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100521

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110521

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110521

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120521

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120521

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130521

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130521

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140521

Year of fee payment: 10

LAPS Cancellation because of no payment of annual fees