JP2003324184A - Semiconductor power module - Google Patents

Semiconductor power module

Info

Publication number
JP2003324184A
JP2003324184A JP2002129008A JP2002129008A JP2003324184A JP 2003324184 A JP2003324184 A JP 2003324184A JP 2002129008 A JP2002129008 A JP 2002129008A JP 2002129008 A JP2002129008 A JP 2002129008A JP 2003324184 A JP2003324184 A JP 2003324184A
Authority
JP
Japan
Prior art keywords
case
lid
power module
semiconductor power
electrode terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002129008A
Other languages
Japanese (ja)
Other versions
JP3845333B2 (en
Inventor
Yoshihide Okamoto
是英 岡本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2002129008A priority Critical patent/JP3845333B2/en
Publication of JP2003324184A publication Critical patent/JP2003324184A/en
Application granted granted Critical
Publication of JP3845333B2 publication Critical patent/JP3845333B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Landscapes

  • Inverter Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor power module which attains size reduction and high-precision wire bonding. <P>SOLUTION: The semiconductor power module 2 is provided with a case 6 having an open upper end and arranged inside with a power semiconductor chip, and a cover 8 for covering the opening of the case 6. Electrode terminals 34a, 34b and 34c which are electrically connected to the power semiconductor chip are drawn out to the outside and bent along the upper surface of the cover 8. The cover 8 is mounted on the case 6 so as to slide along the opening end of the case 6. By such an arrangement, since wire bonding can be carried out in a state that the electrode terminals 34a, 34b and 34c are bent, a wire bonding tool can be shortened. <P>COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、インバータ装置な
どに用いる半導体パワーモジュールに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor power module used in an inverter device or the like.

【0002】[0002]

【従来の技術】従来の半導体パワーモジュールとして、
ケース内に電力用半導体チップを配設し、上面を蓋で覆
う構造のものがある。
2. Description of the Related Art As a conventional semiconductor power module,
There is a structure in which a power semiconductor chip is arranged in a case and the upper surface is covered with a lid.

【0003】図11(a),(b)に示す上記従来例で
ある半導体パワーモジュール100は、矩形状に形成さ
れており、電力用半導体チップなど各種部品が矩形状の
放熱板102上に積み重ねられ、放熱板102を囲むよ
うに枠状の樹脂ケース104が設けてある。なお、図に
おいて、符号106は、放熱板104の各頂点部に設け
た穴であって、放熱板104を外部の冷却部材にボルト
で締め付けるための取付けボルト用穴である。
The conventional semiconductor power module 100 shown in FIGS. 11A and 11B is formed in a rectangular shape, and various components such as a power semiconductor chip are stacked on a rectangular heat dissipation plate 102. A frame-shaped resin case 104 is provided so as to surround the heat dissipation plate 102. In the figure, reference numeral 106 is a hole provided at each vertex of the heat dissipation plate 104, and is a mounting bolt hole for fastening the heat dissipation plate 104 to an external cooling member with a bolt.

【0004】ケース104は、上端が開放されており、
ケース104の開口部は蓋110により閉じられる。蓋
110は、上から押し込むようにしてケース104に装
着する。開口部の周縁部を形成するケース104の一辺
から、ケース104内に収納された半導体チップとボン
ディングワイヤを介して電気的に接続された電極端子1
12が引き出されるとともに、ケース内側に折り曲げら
れている。電極端子112には貫通孔114が設けてあ
る。ケース104内には、貫通孔114と位置合わせさ
れ、貫通孔114と同軸上にナット挿入用穴(図示せ
ず)が形成されており、該穴内にナット(図示せず)が
挿入されるようになっている。貫通孔114の内径は、
ナットの内径と略等しいかあるいは僅かに大きく設定さ
れており、電極端子112上にバスバー(外部配線)を
配置した状態でナットに螺子(図示せず)を螺合するこ
とで、バスバーを電極端子112に固定できるようにな
っている。
The case 104 has an open upper end,
The opening of the case 104 is closed by the lid 110. The lid 110 is attached to the case 104 by being pushed in from above. An electrode terminal 1 electrically connected from one side of the case 104 forming the peripheral edge of the opening to a semiconductor chip housed in the case 104 via a bonding wire.
12 is pulled out and bent inside the case. A through hole 114 is provided in the electrode terminal 112. A nut insertion hole (not shown) is formed in the case 104 so as to be aligned with the through hole 114 and coaxial with the through hole 114, so that a nut (not shown) can be inserted into the hole. It has become. The inner diameter of the through hole 114 is
The inner diameter of the nut is set to be approximately equal to or slightly larger than the inner diameter of the nut. A bus bar (external wiring) is arranged on the electrode terminal 112, and a screw (not shown) is screwed onto the nut to connect the bus bar to the electrode terminal. It can be fixed to 112.

【0005】図12(a),(b)に示す別の従来例で
ある半導体パワーモジュール200では、電極端子21
2は、ケース204外側に折り曲げられ、開口部の周縁
部を形成するケース204部分に対向する点で半導体モ
ジュール100と異なり、蓋210が上から押し込むよ
うにしてケース204に装着する点は半導体モジュール
100と同様である。
In another conventional semiconductor power module 200 shown in FIGS. 12 (a) and 12 (b), an electrode terminal 21 is used.
2 is different from the semiconductor module 100 in that it is bent to the outside of the case 204 and faces the case 204 portion forming the peripheral edge of the opening, unlike the semiconductor module 100 in that the lid 210 is attached to the case 204 by being pushed from above. The same as 100.

【0006】[0006]

【発明が解決しようとする課題】上記のように電極端子
112、212を折り曲げた構成では、電極端子と接合
するためのナットを収容するケース104、204部分
が必要となり、モジュールが大型化する。
In the structure in which the electrode terminals 112 and 212 are bent as described above, the cases 104 and 204 for accommodating the nuts for joining the electrode terminals are required, and the module becomes large.

【0007】そこで、図13(a),(b)に示す半導
体モジュール300では、蓋310側にナットを配置
し、電極端子312を折り曲げない状態(図の実線位置
312a)で、蓋310を上から押し込むようにしてケ
ース304に装着し、その後電極端子312をケース3
04内側(図の点線位置312b)に折り曲げることに
より、電極端子312の貫通孔314を蓋310のナッ
トに位置合わせするようになっている。
Therefore, in the semiconductor module 300 shown in FIGS. 13 (a) and 13 (b), a nut is arranged on the lid 310 side and the lid 310 is placed in the upper position in a state where the electrode terminal 312 is not bent (solid line position 312a in the figure). Insert the electrode terminal 312 into the case 304 by pushing it in from the case 304.
04 By bending the inside (dotted line position 312b in the figure), the through hole 314 of the electrode terminal 312 is aligned with the nut of the lid 310.

【0008】この構成では、図11、12の場合に比べ
てモジュールを小型化することができる。しかしなが
ら、電極端子312が立ったままでワイヤボンディング
を行う必要があるため、電極端子を折り曲げた状態でワ
イヤボンディングを行う場合に比べて、ボンディングツ
ールを長くする必要があり、その結果ボンディングの精
度が低下する。
With this structure, the module can be made smaller than in the case of FIGS. However, since it is necessary to perform wire bonding while the electrode terminals 312 are standing, it is necessary to lengthen the bonding tool as compared with the case where wire bonding is performed with the electrode terminals bent, and as a result, the accuracy of bonding is reduced. To do.

【0009】そこで、本発明の目的は、小型化が実現で
きるとともにワイヤボンディングが高精度で行える半導
体パワーモジュールを提供することを目的とする。
Therefore, an object of the present invention is to provide a semiconductor power module which can be miniaturized and can perform wire bonding with high accuracy.

【0010】[0010]

【課題を解決するための手段】上記目的を達成するため
に、請求項1に係る半導体パワーモジュールは、上端が
開放され内部に電力用半導体チップを配設したケース
と、ケースの開口部を塞ぐ蓋とを有し、電力用半導体チ
ップと電気的に接続された電極端子を外部に引き出した
半導体パワーモジュールにおいて、電極端子は、ケース
から引き出され蓋の上面に沿うように折り曲げられ、蓋
は、ケースの開口端に沿ってスライドさせることでケー
スに装着するように構成されたことを特徴とする。
In order to achieve the above object, a semiconductor power module according to a first aspect of the invention has a case in which an upper end is opened and a power semiconductor chip is arranged inside, and an opening of the case is closed. In the semiconductor power module having a lid and externally extracting the electrode terminal electrically connected to the power semiconductor chip, the electrode terminal is pulled out from the case and bent along the upper surface of the lid, and the lid is It is characterized in that it is configured to be attached to the case by sliding along the opening end of the case.

【0011】請求項2に係る半導体パワーモジュール
は、請求項1に記載の半導体パワーモジュールにおい
て、上記蓋内には、電極端子を貫通し外部配線を該電極
端子に締め付ける螺子と螺合するナットを支持するナッ
ト支持部が設けてあることを特徴とする。
According to a second aspect of the present invention, there is provided a semiconductor power module according to the first aspect, wherein the lid has a nut that is screwed into a screw that penetrates the electrode terminal and fastens an external wire to the electrode terminal. It is characterized in that a nut supporting portion for supporting is provided.

【0012】請求項3に係る半導体パワーモジュール
は、上端が開放され内部に電力用半導体チップを配設し
たケースと、ケースの開口部を塞ぐ蓋とを有し、電力用
半導体チップと電気的に接続された複数の電極端子を外
部に引き出した半導体パワーモジュールにおいて、複数
の電極端子は、ケースの開口部を囲む上壁の一辺から引
き出され蓋の上面に沿うように折り曲げられ、蓋は、ケ
ースの開口端に沿って電極端子側に向けてスライドさせ
ることでケースに装着するように構成されたことを特徴
とする。
A semiconductor power module according to a third aspect of the present invention has a case having an upper end opened and a power semiconductor chip disposed therein, and a lid closing the opening of the case, and electrically connected to the power semiconductor chip. In a semiconductor power module in which a plurality of connected electrode terminals are drawn out to the outside, the plurality of electrode terminals are drawn out from one side of an upper wall surrounding the opening of the case and bent along the upper surface of the lid, and the lid is a case It is configured to be attached to the case by sliding toward the electrode terminal side along the opening end of the.

【0013】請求項4に係る半導体パワーモジュール
は、請求項3に記載の半導体パワーモジュールにおい
て、蓋内には、電極端子を貫通し外部配線を該電極端子
に締め付ける螺子と螺合するナットを支持するナット支
持部が設けてあることを特徴とする。
A semiconductor power module according to a fourth aspect is the semiconductor power module according to the third aspect, wherein a nut that is screwed into a screw that penetrates the electrode terminal and fastens the external wiring to the electrode terminal is supported in the lid. It is characterized in that a nut supporting portion is provided.

【0014】請求項5に係る半導体パワーモジュール
は、請求項4に記載の半導体パワーモジュールにおい
て、蓋は、ナット支持部をスライド方向に関し複数の電
極端子とケース内の収納部品との間に位置するようにケ
ース開口端上に配置した状態で、電極端子側に向けてス
ライドさせることでケースに装着することを特徴とす
る。
A semiconductor power module according to a fifth aspect is the semiconductor power module according to the fourth aspect, wherein the lid is located between the plurality of electrode terminals and the housing component in the case with respect to the sliding direction of the nut support portion. It is characterized in that it is mounted on the case by sliding it toward the electrode terminal side in the state of being arranged on the opening end of the case.

【0015】請求項6に係る半導体パワーモジュール
は、請求項4に記載の半導体パワーモジュールにおい
て、蓋及びケースの形状は、ナット支持部をスライド方
向に関しケース内の収納部品を挟んで複数の電極端子と
反対側に位置するようにボックス開口端上に配置した状
態で、蓋を電極端子側に向けてスライドさせる際に、ナ
ット支持部と収納部品との干渉を防止するように設計さ
れていることを特徴とする。
A semiconductor power module according to a sixth aspect of the present invention is the semiconductor power module according to the fourth aspect, wherein the lid and the case have a plurality of electrode terminals with respect to the sliding direction of the nut support part with the housing component in the case interposed therebetween. Designed to prevent interference between the nut support and the housing parts when the lid is slid toward the electrode terminals when the lid is placed on the open end of the box so that it is located on the opposite side of the box. Is characterized by.

【0016】請求項7に係る半導体パワーモジュール
は、請求項6に記載の半導体パワーモジュールにおい
て、ケースの開口部を囲む上壁は、第1の高さを有する
第1の部分と、第1の高さよりも所定の高さだけ高い第
2の部分とを備え、蓋は、ナット支持部がスライド方向
に関してケース内の収納部品の上流側から下流側に移動
する際に第2の部分上をスライドし、その後、第1の部
分上をスライドしてケースに装着されることを特徴とす
る。
A semiconductor power module according to a seventh aspect is the semiconductor power module according to the sixth aspect, wherein the upper wall surrounding the opening of the case has a first portion having a first height and a first portion. And a second portion that is higher than the height by a predetermined height, and the lid slides on the second portion when the nut support moves in the sliding direction from the upstream side to the downstream side of the storage component in the case. After that, it is slid on the first portion and then mounted on the case.

【0017】[0017]

【発明の実施の形態】以下、添付の図面を参照して本発
明の実施の形態を説明する。なお、本願明細書では、方
向を表す用語(例えば、「上」、「下」、「右」、
「左」、およびこれらの用語を含む別の用語)を適宜用
いるが、説明に用いる図面中の方向を示すだけのもので
あって、これらの用語によって本発明が限定的に解釈さ
れるべきでない。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the accompanying drawings. In the specification of the present application, terms indicating directions (for example, “up”, “down”, “right”,
“Left” and other terms including these terms are used as appropriate, but they only indicate directions in the drawings used for description, and the present invention should not be limitedly interpreted by these terms. .

【0018】実施の形態1.図1〜3を参照して本発明
の実施の形態1に係る半導体パワーモジュールを説明す
る。この半導体パワーモジュール2は、2つの電源端
子、P端子及びN端子を介して外部電源から供給された
電力を、内部の回路によりU、V、W相のいずれかの相
に対応して制御し、制御された電力を1つの出力端子を
介して外部へ出力するものである。このような半導体パ
ワーモジュール2を3つ利用してインバータ装置に適用
する。
Embodiment 1. A semiconductor power module according to Embodiment 1 of the present invention will be described with reference to FIGS. The semiconductor power module 2 controls the electric power supplied from the external power source through the two power source terminals, the P terminal and the N terminal, by an internal circuit in accordance with one of the U, V and W phases. , The controlled electric power is output to the outside through one output terminal. Three such semiconductor power modules 2 are used and applied to an inverter device.

【0019】具体的に、半導体パワーモジュール2は、
矩形状に形成されており、以下に示す各種部品が矩形状
の放熱板4上に積み重ねられ、放熱板4を囲むように枠
状の樹脂ケース6が設けてある。ケース6の上側に設け
た開口部は、蓋8で閉じられるようになっている。後で
詳述するように、蓋8は、ケース6に対しスライド式に
装着されるようになっている。放熱板4の各頂点部に
は、放熱板4を外部の冷却部材にボルトで締め付けるた
めの取付けボルト用穴9が設けてある。
Specifically, the semiconductor power module 2 is
It is formed in a rectangular shape, and various components shown below are stacked on a rectangular heat dissipation plate 4, and a frame-shaped resin case 6 is provided so as to surround the heat dissipation plate 4. The opening provided on the upper side of the case 6 is closed by a lid 8. As will be described later in detail, the lid 8 is slidably attached to the case 6. Each apex of the heat sink 4 is provided with mounting bolt holes 9 for fastening the heat sink 4 to an external cooling member with bolts.

【0020】放熱板4の表面には、絶縁基板10が半田
などのろう材11を介して接合されている。絶縁基板1
0の上面には、銅からなる所定の回路パターン12が形
成されている。回路パターン12には、半導体パワーモ
ジュール2の用途、目的に応じて設けられた複数の半導
体チップ16(例えばIGBT、ダイオード)が、ろう
材(図示せず)で接合され、実装されている。半導体チ
ップ16同士は、アルミなどの金属細線18を介して互
いに接続されている。
An insulating substrate 10 is joined to the surface of the heat dissipation plate 4 via a brazing material 11 such as solder. Insulating substrate 1
A predetermined circuit pattern 12 made of copper is formed on the upper surface of 0. On the circuit pattern 12, a plurality of semiconductor chips 16 (for example, an IGBT and a diode) provided according to the use and purpose of the semiconductor power module 2 are mounted by being joined with a brazing material (not shown). The semiconductor chips 16 are connected to each other via a thin metal wire 18 such as aluminum.

【0021】ケース6の側面には制御用コネクタ20が
配置されている。制御用コネクタ20は、外部回路と内
部回路との間で制御信号のやりとりをするためのコネク
タである。具体的には、制御用コネクタ20のコネクタ
ピン22は、ケース6内の上方空間に配置された制御基
板24上に形成された所定の回路パターン(図示せず)
に、金属細線(図示せず)を介して電気的に接続されて
いる。制御基板24上には半田(図示せず)を介して、
半導体チップ16を制御するための制御用チップ25が
搭載されている。なお、図2では、制御基板24上に配
設された各種部品は図示が省略されている。制御基板2
4上の回路パターンは、上下方向に伸びた中継端子26
の一端に接続されている。中継端子26の他端は、絶縁
基板10近傍に設けた導体パッド28に接続されてい
る。この導体パッド28には、金属細線18を介して、
絶縁基板10上の回路パターン12が電気的に接続され
ている。
A control connector 20 is arranged on the side surface of the case 6. The control connector 20 is a connector for exchanging control signals between an external circuit and an internal circuit. Specifically, the connector pin 22 of the control connector 20 has a predetermined circuit pattern (not shown) formed on the control board 24 arranged in the upper space of the case 6.
Is electrically connected via a thin metal wire (not shown). Via solder (not shown) on the control board 24,
A control chip 25 for controlling the semiconductor chip 16 is mounted. Note that, in FIG. 2, various components arranged on the control board 24 are not shown. Control board 2
The circuit pattern on 4 is the relay terminal 26 extending in the vertical direction.
Is connected to one end of. The other end of the relay terminal 26 is connected to a conductor pad 28 provided near the insulating substrate 10. To the conductor pad 28, through the thin metal wire 18,
The circuit pattern 12 on the insulating substrate 10 is electrically connected.

【0022】制御基板24と絶縁基板10との間には、
ノイズ遮蔽のための導電性のシールド板30が配置され
ている。シールド板30は、例えば図示しない中継端子
を介して接地されている。
Between the control board 24 and the insulating board 10,
A conductive shield plate 30 for shielding noise is arranged. The shield plate 30 is grounded, for example, via a relay terminal (not shown).

【0023】シールド板30よりも下方のケース6の内
部空間は、絶縁性を確保するためにシリコンゲル32で
充填されている。
The internal space of the case 6 below the shield plate 30 is filled with silicon gel 32 to ensure insulation.

【0024】3つの電極板34a,34b,34cが樹
脂ケース6にインサートされ、一体成形されている。電
極板34a,34b,34cは、相互に絶縁されるとと
もにケース6の開口部を囲む一辺(図の例では長手方向
に伸びる辺)からケース6外部に引き出され、図1に示
すように蓋8の表面に沿うように内側に折り曲げられ、
それぞれ電力用外部接続端子(主回路接続端子)である
直流端子のP端子、N端子、及び交流端子を形成する。
P端子を構成する電極板34aの他端、N端子を構成す
る電極板34bの他端、及び交流端子を構成する電極板
34cの他端は、金属細線を介して、回路パターン12
や半導体チップ16に接続されており、この結果、半導
体パワーモジュール2の動作時には、P端子34aから
N端子34bに流れる直流電流が、制御用コネクタ20
から入力された制御信号に基づいた半導体チップ16の
作用により交流電流に変換され、この交流電流が交流端
子34cから出力される。このとき、半導体チップ16
で発生した大量の熱は、絶縁基板10を介して放熱板4
に伝達し、さらにボルト用穴9を介してボルトにより放
熱板4に取付けられた放熱フィンなどの外部冷却部材に
放熱される。
The three electrode plates 34a, 34b, 34c are inserted into the resin case 6 and integrally molded. The electrode plates 34a, 34b, 34c are pulled out to the outside of the case 6 from one side (the side extending in the longitudinal direction in the example of the figure) that is insulated from each other and surrounds the opening of the case 6, and as shown in FIG. Bent inward along the surface of
The P terminal, the N terminal, and the AC terminal of the DC terminal, which is the external connection terminal (main circuit connection terminal) for power, are formed.
The other end of the electrode plate 34a forming the P terminal, the other end of the electrode plate 34b forming the N terminal, and the other end of the electrode plate 34c forming the AC terminal are connected to the circuit pattern 12 via a thin metal wire.
And the semiconductor chip 16, and as a result, when the semiconductor power module 2 is operating, the direct current flowing from the P terminal 34a to the N terminal 34b is changed to the control connector 20.
Is converted into an alternating current by the action of the semiconductor chip 16 based on the control signal input from the alternating current, and this alternating current is output from the alternating current terminal 34c. At this time, the semiconductor chip 16
A large amount of heat generated in the heat dissipation plate 4 passes through the insulating substrate 10.
And is further radiated to an external cooling member such as a radiation fin attached to the radiation plate 4 by a bolt through the bolt hole 9.

【0025】図4は、蓋8をケース6に装着した状態で
の図3に類似した断面図である。蓋8は、ケース6の開
口端に沿って図2右側から左側に向けて、すなわち電極
端子34(34a,34b,34c)の位置する辺側と
は反対側の辺側から電極端子34が位置する辺側に向け
てスライドさせることで図4のようにケース6上部を覆
うようになっている。図4に示すように、スライドが完
了した状態で、折り曲げられた電極端子34の下面と蓋
8の上面が対向する。各電極端子34には貫通孔36が
設けてあり、蓋8の下面側には、貫通孔36と位置合わ
せされ、貫通孔36と同軸上にナット挿入用穴が形成さ
れており、該穴内にナット38が挿入されている。貫通
孔36の内径は、ナット38の内径と略等しいかあるい
は僅かに大きく設定されており、電極端子34上にバス
バー(図示せず)を配置した状態でナット38に螺子
(図示せず)を螺合することで、バスバーを電極端子3
4に固定できるようになっている。
FIG. 4 is a sectional view similar to FIG. 3 with the lid 8 attached to the case 6. The lid 8 is located along the opening end of the case 6 from the right side to the left side in FIG. 2, that is, from the side opposite to the side where the electrode terminals 34 (34a, 34b, 34c) are located. As shown in FIG. 4, the upper portion of the case 6 is covered by sliding it toward the side of the case 6. As shown in FIG. 4, the lower surface of the bent electrode terminal 34 and the upper surface of the lid 8 face each other when the sliding is completed. A through hole 36 is provided in each electrode terminal 34, and a nut insertion hole is formed on the lower surface side of the lid 8 so as to be aligned with the through hole 36 and coaxial with the through hole 36. The nut 38 is inserted. The inner diameter of the through hole 36 is set to be substantially equal to or slightly larger than the inner diameter of the nut 38, and the nut 38 is screwed with the bus bar (not shown) arranged on the electrode terminal 34.
The bus bar is connected to the electrode terminal 3 by screwing (not shown).
It can be fixed to 4.

【0026】なお、図の例では、蓋8は、電極端子34
と対向する部分を含む領域が他の領域に比べて高くなる
ように段差を設けてあるが、蓋8の形状は本発明を限定
するものではなく、例えばナット支持部40を除く蓋部
分が平坦状に形成されていてもよい。
In the illustrated example, the lid 8 is provided with an electrode terminal 34.
Although the step is provided so that the region including the portion facing to is higher than other regions, the shape of the lid 8 does not limit the present invention, and for example, the lid portion excluding the nut support portion 40 is flat. It may be formed into a shape.

【0027】蓋8は、ケース6の開口部を囲む4辺のう
ち短辺に沿って伸びたガイド上をスライドする。このガ
イドの断面形状はどのようなものであってもよく、例え
ば図5(a)に示すようにケース6側に断面矩形状の凸
部を設けるとともに、蓋8側にこれに係合する凹部を設
けるようにしてもよいし、これとは逆に図5(b)に示
すように蓋8側に断面矩形状の凸部を設けるとともに、
ケース6側にこれに係合する凹部を設けるようにしても
よい。あるいは、図(c)に示すように、ケース6側及
び蓋8側に互いに係合する段部を設けてもよい。
The lid 8 slides on a guide extending along the shorter side of the four sides surrounding the opening of the case 6. The guide may have any cross-sectional shape. For example, as shown in FIG. 5A, a convex portion having a rectangular cross-section is provided on the case 6 side, and a concave portion that engages with this is provided on the lid 8 side. May be provided, or conversely, as shown in FIG. 5B, a convex portion having a rectangular cross section is provided on the lid 8 side, and
You may make it provide the recessed part which engages with this at the case 6 side. Alternatively, as shown in FIG. 7C, a stepped portion that engages with each other may be provided on the case 6 side and the lid 8 side.

【0028】蓋8の下面側に設けたナット支持部40が
制御基板24上の部品に干渉する場合は、まず、ナット
支持部40をスライド方向に関して電極端子34と上記
部品との間に位置するように蓋8をケース6上に配置し
た上で、蓋8を電極端子34側に向けてスライドさせる
ことでケース6に装着すればよい。これにより、ナット
支持部40の通路を確保するためにモジュールの厚みを
大きくするのを避けることができる。
When the nut support portion 40 provided on the lower surface side of the lid 8 interferes with the component on the control board 24, first, the nut support portion 40 is positioned between the electrode terminal 34 and the component in the sliding direction. After the lid 8 is placed on the case 6 as described above, the lid 8 may be attached to the case 6 by sliding the lid 8 toward the electrode terminal 34 side. Thereby, it is possible to avoid increasing the thickness of the module in order to secure the passage of the nut support portion 40.

【0029】図6は、ボンディング装置の一例を示す概
略側面図である(図では、構成を一部省略して図示して
ある。)。このボンディング装置50は、ウェッジツー
ル52をボンディングツールとして用いている。ウェッ
ジツール52には、ホーン54を介して超音波振動子5
6が接続されており、ツール52先端でアルミからなる
ワイヤ58を半導体チップ16や回路パターン12に押
し付けた状態で、超音波振動子56を駆動することで、
ワイヤ58を半導体チップ16等に熱圧着する。
FIG. 6 is a schematic side view showing an example of the bonding apparatus (the structure is partially omitted in the figure). The bonding device 50 uses a wedge tool 52 as a bonding tool. The ultrasonic tool 5 is attached to the wedge tool 52 via a horn 54.
6 is connected to the semiconductor chip 16 or the circuit pattern 12 by pressing the wire 58 made of aluminum at the tip of the tool 52, and by driving the ultrasonic transducer 56,
The wire 58 is thermocompression bonded to the semiconductor chip 16 or the like.

【0030】図7に示すように、図13の従来例と同様
に電極端子34を立たせた状態でワイヤボンディングを
行う際に、ボンディングされる対象物(半導体チップ1
6や回路パターン12)表面から電極端子34上端まで
のワーク高さd1(例えば50mm)に比べて、上記表
面とボンディング装置50の部品(例えばホーン54な
ど)との間に必要とされるボンディングクリアランスd
2(例えば40mm)が短い場合、ボンディング装置5
0と電極端子34が干渉する可能性がある。したがっ
て、干渉を避けるためボンディングツール52を長くす
る必要があるため、その分ボンディング位置の精度が低
下する。
As shown in FIG. 7, an object to be bonded (semiconductor chip 1
6 or the circuit pattern 12) Compared with the work height d1 (for example, 50 mm) from the surface to the upper end of the electrode terminal 34, the bonding clearance required between the surface and the component of the bonding device 50 (for example, the horn 54). d
If 2 (for example, 40 mm) is short, the bonding device 5
0 and the electrode terminal 34 may interfere with each other. Therefore, since it is necessary to lengthen the bonding tool 52 in order to avoid interference, the accuracy of the bonding position is reduced accordingly.

【0031】これに対し、本実施形態では、電極端子3
4は折り曲げた状態でワイヤボンディングが行えるため
に(図13の従来例では、電極端子が立った状態で蓋を
閉じる必要があるため、ワイヤボンディングは電極端子
が立った状態で行う必要がある。)、ボンディングツー
ル52を短くできる。その結果、ワイヤボンディングの
位置の精度向上を図ることができるとともに、ボンディ
ング装置50の小型化・低コスト化を図ることができ
る。
On the other hand, in the present embodiment, the electrode terminal 3
No. 4 is capable of performing wire bonding in a bent state (in the conventional example of FIG. 13, it is necessary to close the lid with the electrode terminals standing, and therefore, wire bonding needs to be performed with the electrode terminals standing. ), The bonding tool 52 can be shortened. As a result, it is possible to improve the accuracy of the position of wire bonding, and it is possible to reduce the size and cost of the bonding device 50.

【0032】なお、図11、12の従来例に示す半導体
パワーモジュールでは、電極端子を折り曲げた状態でワ
イヤボンディングを行うことができるが、本実施形態で
は、これらのモジュールに比べて小型のモジュールを提
供できる利点を有する。
In the conventional semiconductor power modules shown in FIGS. 11 and 12, wire bonding can be performed with the electrode terminals bent, but in the present embodiment, a module smaller than these modules is used. It has an advantage that can be provided.

【0033】実施の形態2.本実施形態に係る半導体パ
ワーモジュールは、電極端子の位置する辺側とは反対側
の辺側から電極端子が位置する辺側に向けてスライドし
た場合に、蓋の下面側に設けたナット支持部がケース内
に収納された部品に干渉するのを防止するための構成を
備えている。以下、実施の形態1と同一の構成要素に対
しては同一の符号を用いる。また、説明の都合上、スラ
イド方向をX方向、これに直交し電極端子の配置方向を
Y方向とする。
Embodiment 2. The semiconductor power module according to the present embodiment has a nut support portion provided on the lower surface side of the lid when sliding from the side opposite to the side on which the electrode terminal is located toward the side on which the electrode terminal is located. Has a structure for preventing the components from interfering with the components housed in the case. Hereinafter, the same reference numerals are used for the same components as those in the first embodiment. For convenience of explanation, the sliding direction is the X direction, and the arrangement direction of the electrode terminals orthogonal to the sliding direction is the Y direction.

【0034】図8〜10を参照して、本実施形態に係る
半導体パワーモジュール60の蓋8’は、下面側にナッ
ト38が配置された第1の水平部62と、該水平部62
よりも下面(ナット支持部40を除く。)が所定の高さ
だけ高い第2の水平部64と、第1及び第2の水平部6
2、64を連結する段部(垂直部)66とを有する。
Referring to FIGS. 8 to 10, the lid 8 ′ of the semiconductor power module 60 according to the present embodiment has a first horizontal portion 62 having the nut 38 arranged on the lower surface side, and the horizontal portion 62.
A second horizontal portion 64 whose lower surface (excluding the nut support portion 40) is higher than a predetermined height by a predetermined height, and the first and second horizontal portions 6
And a step portion (vertical portion) 66 connecting the two and 64.

【0035】一方、ケース6’は、蓋8’の第1の水平
部62をX方向に沿ってガイドし、その結果ナット支持
部40が電極端子34の下側まで案内されるよう、第1
の水平部62のY方向両端部に対向してX方向に伸びた
第1の水平ガイド68(図9では斜線部で示されてい
る。)を有する。第1の水平ガイド68は、電極端子3
4配置側の一辺と対向する辺の近傍まで伸びており、上
面が第1の水平ガイド68よりも上記所定の高さだけ高
い第2の水平ガイド72に接続されている。
On the other hand, the case 6 ′ guides the first horizontal portion 62 of the lid 8 ′ along the X direction so that the nut support portion 40 is guided to the lower side of the electrode terminal 34.
The first horizontal guides 68 (shown by the hatched portions in FIG. 9) extending in the X direction are opposed to both ends in the Y direction of the horizontal portion 62. The first horizontal guide 68 is used for the electrode terminal 3
The second horizontal guide 72 extends to the vicinity of the side facing the four arrangement side and the upper surface thereof is higher than the first horizontal guide 68 by the predetermined height.

【0036】この構成によれば、ナット支持部40をケ
ース内に収納された部品(例えば部品74)を挟んで電
極端子34と反対側に位置するようにボックス6’の開
口端上に配置した状態で、蓋8’を電極端子34側に向
けてスライドを開始しても、図8に示すように、蓋8’
の第1の水平部62が第2の水平ガイド72上をスライ
ドする間は、ナット支持部40がケース6’内に収納さ
れた部品(例えば部品74)と干渉せず、ナット支持部
40はスライド方向(X方向)に関して収納部品74の
下流側に移動する。さらに蓋8’をX方向にスライドし
て、第1の水平部62の後端(垂直部66)が第2の水
平ガイド72を通過すると、蓋8’は上記所定高さだけ
下に沈み、今度は、第1の水平部62が第1の水平ガイ
ド68上を、第2の水平部64が第2の水平ガイド72
上をスライドする(図9参照)。さらに蓋8’をX方向
にスライドして、図10に示すように、蓋8’でケース
6’を完全に覆う。
According to this structure, the nut support portion 40 is arranged on the open end of the box 6'so as to be located on the side opposite to the electrode terminal 34 with the part (for example, the part 74) housed in the case interposed therebetween. In this state, even if the lid 8 ′ is slid toward the electrode terminal 34 side, as shown in FIG.
While the first horizontal portion 62 of the above slides on the second horizontal guide 72, the nut support portion 40 does not interfere with the component (for example, the component 74) housed in the case 6 ′, and the nut support portion 40 It moves to the downstream side of the storage component 74 in the sliding direction (X direction). When the lid 8'is further slid in the X direction and the rear end (vertical portion 66) of the first horizontal portion 62 passes through the second horizontal guide 72, the lid 8'is sunk below the predetermined height, This time, the first horizontal portion 62 is above the first horizontal guide 68, and the second horizontal portion 64 is above the second horizontal guide 72.
Slide up (see Figure 9). Further, the lid 8'is slid in the X direction to completely cover the case 6'with the lid 8 ', as shown in FIG.

【0037】なお、図9に最もよく示されるように、蓋
8’の垂直部66のY方向両側端部は、蓋8’が沈んだ
後ケース6’の側壁76に沿ってスライドするようにな
っており、これにより図10のように蓋8’でケース
6’を閉じた際にケース6’の閉鎖性が保たれる。
As best shown in FIG. 9, both ends of the vertical portion 66 of the lid 8'in the Y direction slide along the side wall 76 of the case 6'after the lid 8'is sunk. As a result, as shown in FIG. 10, when the case 6'is closed by the lid 8 ', the closing property of the case 6'is maintained.

【0038】以上、本発明の具体的実施形態について説
明したが、本発明はこれらに限らず種々改変可能であ
る。例えば、上記実施形態では、複数の電極端子をケー
スの開口部を囲む一辺から引き出したが、蓋をケースに
スライドして装着できる構成であれば、電極端子を一辺
に配置する必要は必ずしもない。但し、上記実施形態の
ように電極端子を一辺に配置した方が蓋をケースにスラ
イドする構成を簡単にできる点で好ましい。これに関
し、上記実施形態では、電極端子34は、P端子、N端
子及び1つの交流端子の3つとして説明したが、P端
子、N端子及び3つの交流端子を備えた半導体パワーモ
ジュールの場合、これら5つの電極端子をケースの開口
部を囲む一辺から引き出すようにすれば、蓋をケースに
スライド式に装着する構成をとることは比較的容易とな
る。
The specific embodiments of the present invention have been described above, but the present invention is not limited to these and various modifications can be made. For example, in the above-described embodiment, the plurality of electrode terminals are drawn from one side surrounding the opening of the case, but the electrode terminals do not necessarily have to be arranged on one side as long as the lid can be slid on the case. However, it is preferable to dispose the electrode terminals on one side as in the above-described embodiment because the structure in which the lid is slid on the case can be simplified. In this regard, in the above embodiment, the electrode terminal 34 has been described as three P terminals, N terminals, and one AC terminal, but in the case of a semiconductor power module including P terminals, N terminals, and three AC terminals, If these five electrode terminals are drawn out from one side that surrounds the opening of the case, it becomes relatively easy to take a configuration in which the lid is slidably attached to the case.

【0039】[0039]

【発明の効果】請求項1に記載の本発明によれば、電極
端子を折り曲げた状態でワイヤボンディングを行えるの
で、ボンディングツールを短くできる。
According to the first aspect of the present invention, wire bonding can be performed with the electrode terminals bent, so that the bonding tool can be shortened.

【0040】請求項2または4に記載の本発明によれ
ば、電極端子と接合するためのナットを蓋側に配置する
ことで、ケース側にナットを収容するスペースを省略で
きるので、モジュールの小型化を図ることができる。
According to the present invention as set forth in claim 2 or 4, by disposing the nut for joining with the electrode terminal on the lid side, a space for accommodating the nut on the case side can be omitted. Can be realized.

【0041】請求項3に記載の本発明によれば、複数の
電極端子をケースの開口部を囲む城壁の一辺から引き出
しているため、蓋をケースの開口端に沿ってスライド式
に装着する構成を比較的簡易にすることができる。
According to the third aspect of the present invention, since the plurality of electrode terminals are drawn out from one side of the castle wall surrounding the opening of the case, the lid is slidably mounted along the opening end of the case. Can be relatively simple.

【0042】請求項5に記載の本発明によれば、蓋側に
設けたナット支持部が収納部品と干渉する場合、まず、
ナット支持部をスライド方向に関して電極端子と収納部
品との間に位置するように蓋をケース上に配置した上
で、蓋を電極端子側に向けてスライドさせてケースに装
着しており、これにより、ナット支持部の通路を確保す
るためにモジュールの厚みを大きくするのを避けること
ができる。
According to the fifth aspect of the present invention, when the nut support portion provided on the lid side interferes with the storage component, first,
The lid is placed on the case so that the nut support is located between the electrode terminal and the storage component in the sliding direction, and then the lid is slid toward the electrode terminal side and attached to the case. It is possible to avoid increasing the thickness of the module in order to secure the passage of the nut support portion.

【0043】請求項6または7に記載の本発明によれ
ば、蓋側に設けたナット支持部が収納部品と干渉する場
合、蓋及びケースの形状を、ナット支持部をスライド方
向に関しケース内の収納部品を挟んで複数の電極端子と
反対側に位置するようにボックス開口端上に配置した状
態で、蓋を電極端子側に向けてスライドさせる際に、ナ
ット支持部と収納部品との干渉を防止するように設計す
ることにより、ケース内の収納部品の配置の自由度を高
めることができる。
According to the present invention as set forth in claim 6 or 7, when the nut support portion provided on the lid side interferes with the storage component, the shape of the lid and the case is set in the case with respect to the sliding direction of the nut support portion. When the lid is slid toward the electrode terminals with the housing parts placed on the open end of the box so that they are located on the opposite side of the electrode terminals, interference between the nut support and the housing parts By designing to prevent it, the degree of freedom in arranging the storage components in the case can be increased.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の実施の形態1に係る半導体パワーモ
ジュールを示す外観図。
FIG. 1 is an external view showing a semiconductor power module according to a first embodiment of the present invention.

【図2】 図1のモジュールの内部構造を示す平面図。FIG. 2 is a plan view showing the internal structure of the module shown in FIG.

【図3】 図2のA−A線に沿った断面図。FIG. 3 is a sectional view taken along the line AA of FIG.

【図4】 蓋をケースに装着した状態での図3に類似し
た断面図。
FIG. 4 is a sectional view similar to FIG. 3 with the lid attached to the case.

【図5】 蓋をケース上端に沿ってガイドするための蓋
とケースの係合例を示す断面図。
FIG. 5 is a cross-sectional view showing an example of engagement between the lid and the case for guiding the lid along the upper end of the case.

【図6】 (a)ボンディング装置の一例を示す概略側
面図。(b)ボンディングツールの先端部近傍を示す拡
大斜視図。
FIG. 6A is a schematic side view showing an example of a bonding apparatus. (B) An enlarged perspective view showing the vicinity of the tip of the bonding tool.

【図7】 電極端子を立てた状態でワイヤボンディング
を行う場合の干渉の様子を示す側面図であって、一部破
断して示されている。
FIG. 7 is a side view showing a state of interference when wire bonding is performed in a state where the electrode terminals are erected, and is partially cut away.

【図8】 本発明の実施の形態2に係る半導体パワーモ
ジュールを示す断面図であって、蓋を閉める途中の状態
を示す。
FIG. 8 is a cross-sectional view showing a semiconductor power module according to a second embodiment of the present invention, showing a state in which the lid is being closed.

【図9】 本発明の実施の形態2に係る半導体パワーモ
ジュールを示す外観図であって、蓋をケースに完全に装
着する直前の状態を示す。
FIG. 9 is an external view showing the semiconductor power module according to the second embodiment of the present invention, showing a state immediately before the lid is completely attached to the case.

【図10】 本発明の実施の形態2に係る半導体パワー
モジュールを示す断面図であって、蓋をケースに完全に
装着した状態を示す。
FIG. 10 is a sectional view showing a semiconductor power module according to a second embodiment of the present invention, showing a state in which a lid is completely attached to a case.

【図11】 (a)従来の半導体パワーモジュールの一
例を示す概略的な上面図。(b)図11(a)の半導体
パワーモジュールの側面図。
FIG. 11A is a schematic top view showing an example of a conventional semiconductor power module. (B) The side view of the semiconductor power module of FIG. 11 (a).

【図12】 (a)従来の半導体パワーモジュールの別
の例を示す概略的な上面図。(b)図12(a)の半導
体パワーモジュールの側面図。
FIG. 12 (a) is a schematic top view showing another example of the conventional semiconductor power module. (B) The side view of the semiconductor power module of FIG. 12 (a).

【図13】 (a)従来の半導体パワーモジュールのさ
らに別の例を示す概略的な上面図。(b)図13(a)
の半導体パワーモジュールの側面図。
FIG. 13 (a) is a schematic top view showing still another example of a conventional semiconductor power module. (B) FIG. 13 (a)
The side view of the semiconductor power module of FIG.

【符号の説明】[Explanation of symbols]

2:半導体パワーモジュール、4:放熱板、6:ケー
ス、8:蓋、16:半導体チップ、34:電極端子(電
極板)、38:ナット、40:ナット支持部、60:半
導体パワーモジュール、68:ケースの第1の水平ガイ
ド、72:ケースの第2の水平ガイド、74:収納部
品。
2: semiconductor power module, 4: heat sink, 6: case, 8: lid, 16: semiconductor chip, 34: electrode terminal (electrode plate), 38: nut, 40: nut support portion, 60: semiconductor power module, 68 : First horizontal guide of case, 72: Second horizontal guide of case, 74: Storage component.

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 上端が開放され内部に電力用半導体チッ
プを配設したケースと、ケースの開口部を塞ぐ蓋を有
し、電力用半導体チップと電気的に接続された電極端子
を外部に引き出した半導体パワーモジュールにおいて、 上記電極端子は、ケースから引き出され蓋の上面に沿う
ように折り曲げられ、 上記蓋は、ケースの開口端に沿ってスライドさせること
でケースに装着するように構成されたことを特徴とする
半導体パワーモジュール。
1. A case having an upper end opened and a power semiconductor chip disposed therein, and a lid for closing the opening of the case, and an electrode terminal electrically connected to the power semiconductor chip is drawn to the outside. In the semiconductor power module, the electrode terminal is pulled out from the case and bent along the upper surface of the lid, and the lid is configured to be attached to the case by sliding along the opening end of the case. The semiconductor power module characterized by.
【請求項2】 上記蓋内には、上記電極端子を貫通し外
部配線を該電極端子に締め付ける螺子と螺合するナット
を支持するナット支持部が設けてあることを特徴とする
請求項1に記載の半導体パワーモジュール。
2. A nut supporting portion for supporting a nut that penetrates the electrode terminal and is screwed with a screw for fastening an external wiring to the electrode terminal is provided in the lid. The semiconductor power module described.
【請求項3】 上端が開放され内部に電力用半導体チッ
プを配設したケースと、ケースの開口部を塞ぐ蓋とを有
し、電力用半導体チップと電気的に接続された複数の電
極端子を外部に引き出した半導体パワーモジュールにお
いて、 上記複数の電極端子は、ケースの開口部を囲む上壁の一
辺から引き出され蓋の上面に沿うように折り曲げられ、 上記蓋は、ケースの開口端に沿って電極端子側に向けて
スライドさせることでケースに装着するように構成され
たことを特徴とする半導体パワーモジュール。
3. A plurality of electrode terminals electrically connected to the power semiconductor chip, the case having a case having an upper end opened and having a power semiconductor chip disposed therein, and a lid closing the opening of the case. In the semiconductor power module drawn out to the outside, the plurality of electrode terminals are drawn out from one side of the upper wall surrounding the opening of the case and bent along the upper surface of the lid, and the lid is formed along the opening end of the case. A semiconductor power module configured to be mounted on a case by sliding toward the electrode terminal side.
【請求項4】 上記蓋内には、上記電極端子を貫通し外
部配線を該電極端子に締め付ける螺子と螺合するナット
を支持するナット支持部が設けてあることを特徴とする
請求項3に記載の半導体パワーモジュール。
4. The nut supporting portion for supporting a nut which penetrates the electrode terminal and is screwed into a screw for fastening an external wiring to the electrode terminal is provided in the lid. The semiconductor power module described.
【請求項5】 上記蓋は、ナット支持部をスライド方向
に関し複数の電極端子とケース内の収納部品との間に位
置するようにケース開口端上に配置した状態で、電極端
子側に向けてスライドさせることでケースに装着するこ
とを特徴とする請求項4に記載の半導体パワーモジュー
ル。
5. The lid is directed toward the electrode terminal side in a state where the nut support portion is arranged on the opening end of the case so as to be located between the plurality of electrode terminals and the housing component in the case in the sliding direction. The semiconductor power module according to claim 4, wherein the semiconductor power module is mounted on the case by sliding.
【請求項6】 上記蓋及びケースの形状は、ナット支持
部をスライド方向に関しケース内の収納部品を挟んで複
数の電極端子と反対側に位置するようにボックス開口端
上に配置した状態で、蓋を電極端子側に向けてスライド
させる際に、ナット支持部と収納部品との干渉を防止す
るように設計されていることを特徴とする請求項4に記
載の半導体パワーモジュール。
6. The shape of the lid and the case is such that the nut support is arranged on the opening end of the box so as to be located on the side opposite to the plurality of electrode terminals with the housing component in the case sandwiched therebetween in the sliding direction. The semiconductor power module according to claim 4, which is designed to prevent interference between the nut support portion and the housing component when the lid is slid toward the electrode terminal side.
【請求項7】 上記ケースの開口部を囲む上壁は、第1
の高さを有する第1の部分と、第1の高さよりも所定の
高さだけ高い第2の部分とを備え、 蓋は、ナット支持部がスライド方向に関してケース内の
収納部品の上流側から下流側に移動する際に第2の部分
上をスライドし、その後、第1の部分上をスライドして
ケースに装着されることを特徴とする請求項6の半導体
パワーモジュール。
7. The upper wall surrounding the opening of the case is a first wall.
And a second portion that is higher than the first height by a predetermined height, and the lid has a nut support from the upstream side of the storage component in the case with respect to the sliding direction. 7. The semiconductor power module according to claim 6, wherein when it moves to the downstream side, it slides on the second portion and then slides on the first portion to be mounted on the case.
JP2002129008A 2002-04-30 2002-04-30 Semiconductor power module Expired - Lifetime JP3845333B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002129008A JP3845333B2 (en) 2002-04-30 2002-04-30 Semiconductor power module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002129008A JP3845333B2 (en) 2002-04-30 2002-04-30 Semiconductor power module

Publications (2)

Publication Number Publication Date
JP2003324184A true JP2003324184A (en) 2003-11-14
JP3845333B2 JP3845333B2 (en) 2006-11-15

Family

ID=29542576

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Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008091787A (en) * 2006-10-04 2008-04-17 Nippon Inter Electronics Corp Power semiconductor module
JP2009081255A (en) * 2007-09-26 2009-04-16 Mitsubishi Electric Corp Power semiconductor module
JP2009130007A (en) * 2007-11-21 2009-06-11 Mitsubishi Electric Corp Semiconductor device and its manufacturing method
JP2014017320A (en) * 2012-07-06 2014-01-30 Mitsubishi Electric Corp Semiconductor device
JP2014175444A (en) * 2013-03-08 2014-09-22 Fuji Electric Co Ltd Semiconductor device
EP2738808A4 (en) * 2011-07-28 2015-08-05 Fuji Electric Co Ltd Semiconductor device and method for producing a semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008091787A (en) * 2006-10-04 2008-04-17 Nippon Inter Electronics Corp Power semiconductor module
JP4628337B2 (en) * 2006-10-04 2011-02-09 日本インター株式会社 Power semiconductor module
JP2009081255A (en) * 2007-09-26 2009-04-16 Mitsubishi Electric Corp Power semiconductor module
JP2009130007A (en) * 2007-11-21 2009-06-11 Mitsubishi Electric Corp Semiconductor device and its manufacturing method
EP2738808A4 (en) * 2011-07-28 2015-08-05 Fuji Electric Co Ltd Semiconductor device and method for producing a semiconductor device
JP2014017320A (en) * 2012-07-06 2014-01-30 Mitsubishi Electric Corp Semiconductor device
JP2014175444A (en) * 2013-03-08 2014-09-22 Fuji Electric Co Ltd Semiconductor device
US9750137B2 (en) 2013-03-08 2017-08-29 Fuji Electric Co., Ltd. Semiconductor device

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