JP2003318449A - Led light source and its fabricating method - Google Patents

Led light source and its fabricating method

Info

Publication number
JP2003318449A
JP2003318449A JP2003141765A JP2003141765A JP2003318449A JP 2003318449 A JP2003318449 A JP 2003318449A JP 2003141765 A JP2003141765 A JP 2003141765A JP 2003141765 A JP2003141765 A JP 2003141765A JP 2003318449 A JP2003318449 A JP 2003318449A
Authority
JP
Japan
Prior art keywords
led
pad
resin
substrate
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003141765A
Other languages
Japanese (ja)
Other versions
JP4030463B2 (en
Inventor
Masami Yasumoto
正美 保本
Yukiharu Uehashi
幸春 上橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Tottori Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP2003141765A priority Critical patent/JP4030463B2/en
Publication of JP2003318449A publication Critical patent/JP2003318449A/en
Application granted granted Critical
Publication of JP4030463B2 publication Critical patent/JP4030463B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Abstract

<P>PROBLEM TO BE SOLVED: To provide an LED light source in which the optical characteristics are made uniform and a bonding wire is prevented from being exposed. <P>SOLUTION: The LED light source comprises a substrate 2 where a pad 22 for LED consisting of a chip placing pad 22a and a wire bonding pad 22b is formed on the upper surface of a basic material, an LED chip 31 placed on the chip placing pad 22a and connected with the wire bonding pad 22b through a bonding wire 32, and a translucent resin 33 for molding the LED chip 31 wherein an oil-repellent film 26 is provided on the upper surface of the substrate 2 to surround the pad 22 for LED. <P>COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【発明の属する技術分野】本発明は、基板上面に配置し
たLEDチップを透光性樹脂によってモ−ルドしたLE
D光源、及びその製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LE in which an LED chip arranged on the upper surface of a substrate is molded with a transparent resin.
The present invention relates to a D light source and a manufacturing method thereof.

【従来の技術】光源の小型化要求に伴って、既製の樹脂
モールドLEDランプに代わり、基板に直接LEDチッ
プを配置してそれを透光性樹脂によってモ−ルドしたL
ED光源が提案され、実用化されている。この種のLE
D光源においては、LEDチップを樹脂モ−ルドするた
め、流動状態の樹脂を基板に直接所定量滴下させ、この
流動状態の樹脂を硬化させる手法が用いられている。と
ころが、基板上面は前記樹脂となじみが良いので、滴下
された流動状態の樹脂が基板表面に沿って広がりやす
く、樹脂形状を一様にできない、樹脂の厚みを厚くでき
ないなどの問題があった。このような点を考慮し、本願
出願人は、LED用パッドの全周を囲む溝を形成し、こ
の溝との境界部分における表面張力によって樹脂の流れ
を規制する手法(特許文献1)を開発し、ある程度の改
善を行うことができた。しかしながら、光学特性の向上
とワイヤボンド線の安定的な埋没を図るために、樹脂の
高さを更に高めるべく滴下する樹脂量を多くしたとこ
ろ、パッドと溝の境界部分の表面張力を越える力が作用
し、樹脂の流れ出しが発生する個所が現れた。そして、
樹脂の流れ出しが生じた個所においては、逆に樹脂の高
さが低くなり、光学特性の不均一化、ワイヤボンド線の
露出の要因になることが分かった。
2. Description of the Related Art With the demand for miniaturization of light sources, an LED chip is directly arranged on a substrate instead of a ready-made resin-molded LED lamp, and the LED chip is molded with a transparent resin.
An ED light source has been proposed and put into practical use. LE of this kind
In the D light source, in order to resin mold the LED chip, a method is used in which a fluid resin is dropped directly onto the substrate by a predetermined amount and the fluid resin is cured. However, since the upper surface of the substrate is well compatible with the resin, there is a problem that the dropped resin in a fluidized state is likely to spread along the substrate surface, the resin shape cannot be made uniform, and the resin cannot be thickened. In consideration of such a point, the applicant of the present application has developed a method (Patent Document 1) of forming a groove surrounding the entire circumference of the LED pad and controlling the resin flow by the surface tension at the boundary with the groove. However, I was able to make some improvements. However, in order to improve the optical characteristics and to bury the wire bond wire stably, when the amount of dropped resin was increased to further increase the height of the resin, a force exceeding the surface tension at the boundary between the pad and the groove was found. A portion where the resin acted and the resin flowed out appeared. And
On the contrary, it was found that at the place where the resin flows out, the height of the resin becomes low, which causes non-uniformity of optical characteristics and exposure of wire bond lines.

【特許文献1】特願平7−151823号(特開平9−
6259号公報)
[Patent Document 1] Japanese Patent Application No. 7-151823
(6259 publication)

【発明が解決しようとする課題】そこで本発明は、上記
の点を考慮し、光学特性の均一化、ワイヤボンド線の露
出防止を図ったLED光源を提供することを主な課題と
する。
SUMMARY OF THE INVENTION In view of the above points, the present invention has as its main object to provide an LED light source in which the optical characteristics are made uniform and the wire bond lines are prevented from being exposed.

【課題を解決するための手段】本発明のLED光源は、
基板上面にLEDチップを配置し、このLEDチップを
透光性樹脂によってモ−ルドしたLED光源において、
前記基板上面に前記透光性樹脂の外周縁に沿って撥油性
被膜を一定の幅で環状に設けたことを特徴とする。本発
明のLED光源は、チップ配置用及びワイヤボンド用パ
ッドからなるLED用パッドを基材上面に形成した基板
と、前記チップ配置用パッドに配置されて前記ワイヤボ
ンド用パッドにワイヤボンド線を介して接続されるLE
Dチップと、前記LEDチップをモ−ルドする透光性樹
脂を備えるLED光源において、前記LED用パッドを
囲むように前記基板上面に環状の凹部を設け、この凹部
内に撥油性被膜を設けたことを特徴とする。本発明のL
ED光源の製造方法は、チップ配置用及びワイヤボンド
用パッドからなるLED用パッドを基材上面に形成した
基板を準備する工程と、該基板に前記LED用パッドを
囲むように撥油性被膜をメッシュ版あるいはメタル版を
用いて設ける工程と、前記被膜が形成された前記基板の
前記チップ配置用パッドにLEDチップを固定して前記
ワイヤボンド用パッドにワイヤボンド線を接続する工程
と、前記撥油性被膜によって規定される領域内に前記L
EDチップを埋めるように流動状態の樹脂を配置し、該
樹脂を硬化させる工程を備えることを特徴とする。
The LED light source of the present invention comprises:
In the LED light source in which the LED chip is arranged on the upper surface of the substrate and the LED chip is molded by the translucent resin,
An oil-repellent coating is annularly provided on the upper surface of the substrate along the outer peripheral edge of the translucent resin with a constant width. The LED light source of the present invention includes a substrate on which LED pads, which are pads for chip arrangement and pads for wire bonding, are formed on the upper surface of a base material, and a wire bond wire that is arranged on the pad for chip arrangement and through the wire bond pad. LE connected by
In an LED light source including a D chip and a translucent resin that molds the LED chip, an annular recess is provided on the upper surface of the substrate so as to surround the LED pad, and an oil repellent coating film is provided in the recess. It is characterized by L of the present invention
The method of manufacturing an ED light source includes a step of preparing a substrate having LED pads, which are pads for arranging chips and pads for wire bonding, formed on an upper surface of a base material, and an oil-repellent coating is meshed on the substrate to surround the LED pads. Providing using a plate or a metal plate, fixing an LED chip to the chip arranging pad of the substrate on which the film is formed and connecting a wire bond wire to the wire bond pad, and the oil repellency Within the area defined by the coating, the L
The method is characterized by including a step of disposing a fluid resin so as to fill the ED chip and curing the resin.

【発明の実施の形態】以下本発明の実施例を図1に示す
線状のLED光源1に適用した場合を例にとって説明す
る。このLED光源1は、基板2の上面に複数のLED
発光部3を直線的に配置して構成している。まず基板2
の構造、並びにその製造手順について図2〜図4を参照
して説明する。基板2は、ガラスエポキシ等の長尺基材
21の表面に銅箔が形成されたものが用意され、それを
エッチング処理することにより、複数のLED用パッド
22とこれらを接続する配線パターン23を導電パター
ンとして備えて構成される。各LED用パッド22は、
それぞれが半円形状を成すチップ配置用のパッド22a
とワイヤボンド用のパッド22bを備え、全体が円ない
し楕円形状を成している。このLED用パッド22の周
囲を凹部24が環状に囲むように、LED用パッド22
とその周囲に位置する配線パターン23の間には、基材
21が露出する所定幅の間隔が設けられている。次に、
上記の基板2は、その表面の光反射性を高めるために、
図3に示すように、チップ配置用のパッド22aとワイ
ヤボンド用のパッド22bの必要部分、その他の回路素
子配置に必要な部分のみを露出させ、残りの大部分を絶
縁性を有する白色系のレジスト膜25によって被覆する
処理が施される。このレジスト膜25によって被覆され
ない導電パターン部分は、必要に応じてメッキ処理を施
すことが望ましい。このように基板2を準備し、次にこ
の基板2の表面にLED用パッド22を囲むように撥油
性被膜26を形成する。撥油性被膜26は、撥油剤の撥
油性を粒状に滴下されたn−ヘキサデカンの接触角度で
表す(撥水剤の撥水性を水滴の接触角度で表すのと同
様)場合に、その接触角度がより大きい、すなわち撥油
性の高い材料が選択して用いられる。尚、前記白色系の
レジスト膜25や、導電パターンの撥油性を前記接触角
度で表すと、材料にもよるが概ね10度以下であり撥油
性は低い。この例では、撥油性被膜26として前記接触
角度が30度以上であるシリコンを主成分とする白色シ
リコン樹脂を用いている。このシリコン樹脂を例えばメ
ッシュ版を用いたスクリーン印刷によって前記導電パタ
ーン部分の厚みと略同じ30μm前後の厚みとなるよう
に形成し、前記凹部24内に収まるように配置してい
る。このように撥油性被膜26をメッシュ版を用いたス
クリーン印刷によって形成する場合は、撥油性被膜26
の幅を狭くしすぎると目詰まりの要因になりやすいの
で、撥油性被膜26の幅は、0.3mm以上に設定する
のが好ましく、より好ましくは、0.5mm前後に設定
するのがよい。次に、LED発光部3の構造、並びにそ
の製造手順について図4、図5を参照して説明する。図
3に示す状態の基板2を用意し、この基板2に一辺が
0.3mm前後の立方体形状をしたLEDチップ31の
固定とワイヤボンド配線を行う。すなわち、各LED用
パッド22のチップ配置用パッド22aにLEDチップ
31を導電性接着剤を介して接着固定する。次いで各L
EDチップ31とワイヤボンド用パッド22bの間にワ
イヤボンド線32をワイヤボンド接続する。図4はこの
状態を示している。LEDチップ31に接続されたワイ
ヤボンド線32の頂上部分の高さは基板2表面から0.
7mm前後となる。引き続き図4、図5を参照して硬化
時に透光性を有する樹脂33によるLEDチップ31の
樹脂モールドについて説明する。流動状態にある透光性
樹脂33をLEDチップ31の上から所定量滴下させる
と、樹脂33はその流動性によって四方に拡がっていく
が、その裾野部分が環状の撥油性被膜26に達すると、
撥油性被膜26によってその拡がりが阻止される。透光
性樹脂33は、例えばエポキシ系の樹脂等を油性の溶媒
に溶かされ形成されるので、撥油性被膜26と接触する
と、撥油性被膜26にはじかれて撥油性被膜26と接触
する面積を小さくするような力、すなわち樹脂33の表
面張力を大きくする力が作用し、樹脂33の拡がりが阻
止される。その結果、撥油性被膜26によって裾野部分
の拡がりが規制された樹脂33は、その拡がりが高さ方
向に向けられ、厚みを厚くすることができる。従来構造
における樹脂の厚みは1mm程度が限度であったのに対
して、従来と同一条件下で厚さが30μ前後と極めて薄
い撥油性被膜26を追加するのみで、樹脂33の厚みを
最高でその4倍の4mm以上にすることができることを
確認した。しかしながら、樹脂33の厚みを必要以上に
厚くすると、逆にLED光源1の厚み増加になるので、
この例では、ワイヤボンド線32の頂上部分(基板2表
面から0.7mm前後)を完全に埋没でき、しかもLE
D光源1の厚みを薄く設定できる最適範囲として、硬化
後の樹脂33の厚みが1.5mm前後になるように設定
している。その後、この樹脂33は硬化のために加熱処
理される。このように樹脂33の厚みを厚くすることに
よって、ワイヤボンド線32を樹脂33に完全に埋没す
ることができるようになり、露出ワイヤボンド線の断線
等の問題を解消することができた。また、撥油性被膜2
6によって、流動状態の樹脂33の形状を互いに独立し
た一定の形状に保つことができ、各LED発光部3の光
学特性を均一に揃えることができる。さらにまた、樹脂
33と基板2の接触部分付近における気泡の発生を抑制
することもできる。上記実施例は、撥油性被膜26をL
ED用パッド22を囲むように環状に形成した凹部24
内に配置して基板2の表面と撥油性被膜26の表面をほ
ぼ同じ高さ(配線パターン23の存在によって基板2の
表面よりも突出する部分も存在)にする場合を示した
が、図6に示すように、LED用パッド22を囲む撥油
性被膜26を環状の凹部24の外に配置したり、図7に
示すように、撥油性被膜26を環状の凹部の内、すなわ
ちLED用パッド22の外周縁部分上に配置してもよ
い。このようにすれば、図5に示す場合に比べて撥油性
被膜26によるLEDチップの光の遮光が多少増大する
恐れがあるが、撥油性被膜26自体の厚みによる堰止め
効果が加わって樹脂の流れ出しをより確実に阻止するこ
とができる。また、上記実施例はメッシュ版により撥油
性被膜26を形成する例を示したが、図4〜図7に示す
撥油性被膜26を、メタル版等を用いて例えば図8
(a),(b)に示すように複数の撥油性被膜要素26
a,26bを用いて形成することもできる。この場合、
撥油性被膜26は図4に示すような切れ目のないもので
はなく、切れ目部分26cが存在した環状になる。この
切れ目部分26cは、撥油性被膜26をメタル版を用い
て形成する場合に、LED用パッド22に相応する部分
を覆う部材を保持するための連結片が必要となり、その
連結片の存在する部分によって形成される。この切れ目
部分26cは、存在しない方が好ましいが、設ける必要
がある場合はその幅を樹脂33の流れ出しを阻止するに
必要とされる幅以内に設定して形成する。この図8に示
す例では、直径(長軸)が3.2mm程度の環状を成す
撥油性被膜26に対して、その切れ目部分26cの幅を
0.3mmに設定しているが、被膜26で囲まれる領域
内に流動状態の樹脂33を高さが3mm程度になるまで
流しても、切れ目部分26cからの樹脂33の流れ出し
は全く生じなかった。また、同様に、直径(長軸)が
4.4mm程度の環状を成す撥油性被膜26に対して、
その切れ目部分26cの幅を0.5mmに設定した場合
においても、切れ目部分26cからの樹脂33の流れ出
しは全く生じなかった。また、撥油性被膜26に形成す
る切れ目26cは、その幅が1mm程度以下であれば樹
脂33の流れ出しを防止することができ、樹脂の流れ出
しを防止する幅以内に設定されたものであれば、撥油性
被膜26に複数個設けることができる。すなわち、撥油
性被膜26は、樹脂33の裾野部分の外郭形状を規定す
るように樹脂33の外周縁に沿って配置されていれば、
分割された複数の要素を集合して環状に形成してもよい
し、連続する1つの要素によって形成してもよい。ま
た,上記実施例は撥油性被膜26としてシリコンを主成
分とする撥油剤を用いる場合を例示したが、撥油性の高
い部材、すなわち上記接触角度が30度以上、好ましく
は50度以上、より好ましくは70度以上の撥油剤をこ
れに代えて用いることもでき、例えばフッ素系ポリマ−
を主成分とする撥油剤やそれに類する撥油剤を用いても
同様の効果が得られる。また,上記実施例は線状のLE
D光源1を例に取ったが、これ以外の面状のLED光源
等も対象とすることもでき、例えばLED発光部3を1
個備えるものや、LED発光部3を複数個を備える他の
LED光源にも適用することができる。
BEST MODE FOR CARRYING OUT THE INVENTION A case where the embodiment of the present invention is applied to the linear LED light source 1 shown in FIG. 1 will be described below as an example. This LED light source 1 includes a plurality of LEDs on the upper surface of a substrate 2.
The light emitting parts 3 are arranged linearly. First substrate 2
2 and the manufacturing procedure thereof will be described with reference to FIGS. The substrate 2 is prepared by forming a copper foil on the surface of a long base material 21 such as glass epoxy. By etching the same, a plurality of LED pads 22 and a wiring pattern 23 connecting these are formed. It is provided and configured as a conductive pattern. Each LED pad 22 is
Pads 22a for chip placement, each of which has a semicircular shape
And a pad 22b for wire bonding are provided, and the whole has a circular or elliptical shape. The LED pad 22 is formed such that the recess 24 annularly surrounds the LED pad 22.
A space having a predetermined width is provided between the wiring pattern 23 and the wiring pattern 23 located around the wiring pattern 23 to expose the base material 21. next,
The substrate 2 has the following properties in order to enhance the light reflectivity of its surface.
As shown in FIG. 3, only a necessary portion of the pad 22a for arranging the chip and the pad 22b for wire bonding and other portions necessary for arranging the circuit elements are exposed, and most of the rest are of a white type having an insulating property. A process of covering with the resist film 25 is performed. The conductive pattern portion not covered with the resist film 25 is desirably plated as necessary. Thus, the substrate 2 is prepared, and then the oil-repellent coating 26 is formed on the surface of the substrate 2 so as to surround the LED pads 22. When the oil repellency of the oil repellent agent is represented by the contact angle of n-hexadecane dropped in a granular form (similar to the water repellency of the water repellent agent by the contact angle of water droplets), the oil repellent coating film 26 has a contact angle of A larger material, that is, a material having high oil repellency is selected and used. When the oil repellency of the white resist film 25 and the conductive pattern is represented by the contact angle, it is approximately 10 degrees or less, depending on the material, and the oil repellency is low. In this example, as the oil-repellent coating 26, a white silicone resin containing silicon having a contact angle of 30 degrees or more as a main component is used. This silicon resin is formed by screen printing using, for example, a mesh plate so as to have a thickness of about 30 μm, which is approximately the same as the thickness of the conductive pattern portion, and is arranged so as to fit in the recess 24. When the oil repellent coating film 26 is formed by screen printing using a mesh plate as described above, the oil repellent coating film 26 is formed.
The width of the oil-repellent coating 26 is preferably set to 0.3 mm or more, and more preferably set to about 0.5 mm because the width of the oil-repellent coating 26 is likely to cause clogging. Next, the structure of the LED light emitting section 3 and the manufacturing procedure thereof will be described with reference to FIGS. The substrate 2 in the state shown in FIG. 3 is prepared, and the LED chip 31 having a cubic shape with one side of approximately 0.3 mm is fixed and the wire bond wiring is performed on the substrate 2. That is, the LED chip 31 is bonded and fixed to the chip placement pad 22a of each LED pad 22 via a conductive adhesive. Then each L
A wire bond wire 32 is wire-bonded between the ED chip 31 and the wire bond pad 22b. FIG. 4 shows this state. The height of the top portion of the wire bond wire 32 connected to the LED chip 31 is 0.
It will be around 7 mm. Next, with reference to FIGS. 4 and 5, the resin molding of the LED chip 31 with the resin 33 having a light-transmitting property when cured will be described. When a predetermined amount of the translucent resin 33 in a fluid state is dropped from above the LED chip 31, the resin 33 spreads in all directions due to its fluidity, but when its skirt reaches the annular oil-repellent coating 26,
The oil-repellent coating 26 prevents its spread. The translucent resin 33 is formed, for example, by dissolving an epoxy resin or the like in an oily solvent. Therefore, when the translucent resin 33 comes into contact with the oil repellent coating 26, the area of contact with the oil repellent coating 26 is repelled by the oil repellent coating 26. A force to reduce the force, that is, a force to increase the surface tension of the resin 33 acts, and the spread of the resin 33 is prevented. As a result, the resin 33, the expansion of the skirt of which is restricted by the oil-repellent coating 26, is directed in the height direction, and the thickness can be increased. Although the thickness of the resin in the conventional structure is limited to about 1 mm, under the same conditions as the conventional one, the thickness of the resin 33 can be maximized only by adding the extremely thin oil-repellent coating 26 having a thickness of around 30 μ. It was confirmed that it could be four times as large as 4 mm or more. However, if the thickness of the resin 33 is made thicker than necessary, the thickness of the LED light source 1 is increased.
In this example, the top portion of the wire bond wire 32 (about 0.7 mm from the surface of the substrate 2) can be completely buried, and LE
As an optimum range in which the thickness of the D light source 1 can be set thin, the thickness of the cured resin 33 is set to about 1.5 mm. Then, the resin 33 is heat-treated for curing. By increasing the thickness of the resin 33 in this way, the wire bond wire 32 can be completely buried in the resin 33, and problems such as disconnection of the exposed wire bond wire can be solved. In addition, the oil-repellent coating 2
6, the shape of the resin 33 in the fluidized state can be maintained at a constant shape independent of each other, and the optical characteristics of the LED light emitting units 3 can be made uniform. Furthermore, it is possible to suppress the generation of bubbles near the contact portion between the resin 33 and the substrate 2. In the above-mentioned embodiment, the oil-repellent coating 26 is L
An annular recess 24 surrounding the ED pad 22
6 shows a case in which the surface of the substrate 2 and the surface of the oil-repellent coating 26 are arranged at substantially the same height (there is a portion projecting from the surface of the substrate 2 due to the presence of the wiring pattern 23). 7, the oil repellent coating 26 surrounding the LED pad 22 is disposed outside the annular recess 24, or as shown in FIG. 7, the oil repellent coating 26 is disposed inside the annular recess, that is, the LED pad 22. You may arrange | position on the outer peripheral edge part of. By doing so, the light blocking of the LED chip light by the oil repellent coating 26 may be slightly increased as compared with the case shown in FIG. 5, but the blocking effect by the thickness of the oil repellent coating 26 itself is added and the resin The outflow can be prevented more reliably. Further, in the above-mentioned embodiment, the example in which the oil repellent coating film 26 is formed by the mesh plate is shown. However, the oil repellent coating film 26 shown in FIGS.
As shown in (a) and (b), a plurality of oil-repellent coating elements 26 are provided.
It can also be formed using a and 26b. in this case,
The oil-repellent coating 26 is not a continuous one as shown in FIG. 4 but has an annular shape with a cut portion 26c. When the oil-repellent coating 26 is formed by using a metal plate, the cut portion 26c needs a connecting piece for holding a member that covers a portion corresponding to the LED pad 22, and the portion where the connecting piece exists. Formed by. It is preferable that the cut portion 26c does not exist, but if it is necessary to provide the cut portion 26c, the width thereof is set within a width required to prevent the resin 33 from flowing out. In the example shown in FIG. 8, the width of the cut portion 26c is set to 0.3 mm for the oil-repellent coating 26 having an annular shape with a diameter (major axis) of about 3.2 mm. Even if the resin 33 in a fluid state was flowed in the enclosed area until the height became about 3 mm, the resin 33 did not flow out from the cut portion 26c at all. Similarly, with respect to the oil-repellent coating 26 having an annular shape with a diameter (major axis) of about 4.4 mm,
Even when the width of the cut portion 26c was set to 0.5 mm, the resin 33 did not flow out from the cut portion 26c at all. Further, the cut 26c formed in the oil repellent coating film 26 can prevent the resin 33 from flowing out if the width thereof is about 1 mm or less, and if it is set within the width that prevents the resin flowing out, A plurality of oil repellent coatings 26 can be provided. That is, if the oil-repellent coating 26 is arranged along the outer peripheral edge of the resin 33 so as to define the outer shape of the skirt portion of the resin 33,
A plurality of divided elements may be aggregated to form an annular shape, or may be formed by one continuous element. Further, although the above example illustrates the case where the oil repellent agent containing silicon as the main component is used as the oil repellent coating film 26, a member having high oil repellency, that is, the contact angle is 30 degrees or more, preferably 50 degrees or more, and more preferably Can be replaced with an oil repellent having a temperature of 70 degrees or more, for example, a fluoropolymer.
The same effect can be obtained by using an oil repellent mainly composed of or an oil repellent similar thereto. In addition, the above embodiment is a linear LE.
Although the D light source 1 is taken as an example, other planar LED light sources or the like can be used.
The present invention can be applied to an individual LED light source or another LED light source including a plurality of LED light emitting units 3.

【発明の効果】以上のように本発明によれば、薄い撥油
性被膜によってモ−ルド用樹脂の形状の安定化を図るこ
とができ、光学特性の均一なLED光源を提供すること
ができる。撥油性被膜によってモ−ルド用樹脂の厚みを
厚くすることができ、ワイヤボンド線を樹脂に埋没して
ワイヤボンド線を確実に保護することができる。
As described above, according to the present invention, the shape of the resin for molding can be stabilized by the thin oil-repellent coating, and the LED light source with uniform optical characteristics can be provided. The oil-repellent coating can increase the thickness of the molding resin, and the wire bond wire can be buried in the resin to reliably protect the wire bond wire.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す線状LED光源の平面
図である。
FIG. 1 is a plan view of a linear LED light source showing an embodiment of the present invention.

【図2】同実施例の基板(導電パターン形成済)の要部
を示す平面図である。
FIG. 2 is a plan view showing a main part of a substrate (having a conductive pattern formed) of the same example.

【図3】同実施例の基板(レジスト形成済)の要部を示
す平面図である。
FIG. 3 is a plan view showing a main part of a substrate (resist formed) of the embodiment.

【図4】同実施例の基板(LEDチップ配置済)の要部
を示す平面図である。
FIG. 4 is a plan view showing a main part of a substrate (with LED chips arranged) of the embodiment.

【図5】図1の要部断面図である。5 is a cross-sectional view of the main parts of FIG.

【図6】他の実施例の要部断面図である。FIG. 6 is a cross-sectional view of main parts of another embodiment.

【図7】さらに他の実施例の要部断面図である。FIG. 7 is a cross-sectional view of a main part of still another embodiment.

【図8】(a),(b)は撥油性被膜の他の構成例を示
す平面図である
8A and 8B are plan views showing another configuration example of the oil-repellent coating.

【符号の説明】[Explanation of symbols]

1 線状LED光源 2 基板 21 基材 22 LED用パッド 22a チップ配置用パッド 22b ワイヤボンド用パッド 25 レジスト膜 26 撥油性被膜 3 LED発光部 31 LEDチップ 32 ワイヤボンド線 33 透光性樹脂 1 linear LED light source 2 substrates 21 Base material 22 LED pad 22a Chip placement pad 22b Wire bond pad 25 Resist film 26 Oil repellent coating 3 LED light emitting part 31 LED chip 32 wire bond wire 33 Translucent resin

───────────────────────────────────────────────────── フロントページの続き (72)発明者 上橋 幸春 鳥取県鳥取市南吉方3丁目201番地 鳥取 三洋電機株式会社内 Fターム(参考) 5F041 AA42 AA47 CA77 DA02 DA07 DA13 DA39 DA43 DA55 DA56 DA59    ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Koharu Uehashi             3-201 Minamiyoshikata, Tottori City, Tottori Prefecture Tottori             Sanyo Electric Co., Ltd. F-term (reference) 5F041 AA42 AA47 CA77 DA02 DA07                       DA13 DA39 DA43 DA55 DA56                       DA59

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 基板上面にLEDチップを配置し、この
LEDチップを透光性樹脂によってモ−ルドしたLED
光源において、前記基板上面に前記透光性樹脂の外周縁
に沿って撥油性被膜を一定の幅で環状に設けたことを特
徴とするLED光源。
1. An LED in which an LED chip is arranged on the upper surface of a substrate and the LED chip is molded with a light-transmissive resin.
In the light source, an LED light source is characterized in that an oil-repellent coating is provided in a ring shape on the upper surface of the substrate along the outer peripheral edge of the translucent resin so as to have a constant width.
【請求項2】 チップ配置用及びワイヤボンド用パッド
からなるLED用パッドを基材上面に形成した基板と、
前記チップ配置用パッドに配置されて前記ワイヤボンド
用パッドにワイヤボンド線を介して接続されるLEDチ
ップと、前記LEDチップをモ−ルドする透光性樹脂を
備えるLED光源において、前記LED用パッドを囲む
ように前記基板上面に環状の凹部を設け、この凹部内に
撥油性被膜を設けたことを特徴とするLED光源。
2. A substrate having an LED pad, which is a chip placement pad and a wire bond pad, formed on an upper surface of a base material.
An LED light source including an LED chip arranged on the chip arranging pad and connected to the wire bond pad via a wire bond wire, and an LED light source comprising a translucent resin that molds the LED chip, wherein the LED pad An LED light source characterized in that an annular recess is provided on the upper surface of the substrate so as to surround the above, and an oil repellent coating film is provided in the recess.
【請求項3】 チップ配置用及びワイヤボンド用パッ
ドからなるLED用パッドを基材上面に形成した基板を
準備する工程と、該基板に前記LED用パッドを囲むよ
うに撥油性被膜をメッシュ版あるいはメタル版を用いて
設ける工程と、前記被膜が形成された前記基板の前記チ
ップ配置用パッドにLEDチップを固定して前記ワイヤ
ボンド用パッドにワイヤボンド線を接続する工程と、前
記撥油性被膜によって規定される領域内に前記LEDチ
ップを埋めるように流動状態の樹脂を配置し、該樹脂を
硬化させる工程を備えることを特徴とするLED光源の
製造方法。
3. A step of preparing a substrate on which an LED pad including a chip arranging pad and a wire bonding pad is formed on an upper surface of a base material, and an oil-repellent coating on the substrate so as to surround the LED pad or a mesh plate or A step of providing using a metal plate; a step of fixing an LED chip to the chip arranging pad of the substrate on which the film is formed and connecting a wire bond wire to the wire bond pad; A method of manufacturing an LED light source, comprising a step of disposing a resin in a fluid state so as to fill the LED chip in a defined region and curing the resin.
JP2003141765A 2003-05-20 2003-05-20 LED light source and manufacturing method thereof Expired - Fee Related JP4030463B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003141765A JP4030463B2 (en) 2003-05-20 2003-05-20 LED light source and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003141765A JP4030463B2 (en) 2003-05-20 2003-05-20 LED light source and manufacturing method thereof

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP8292791A Division JPH10144963A (en) 1996-11-05 1996-11-05 Led light source and its manufacture

Publications (2)

Publication Number Publication Date
JP2003318449A true JP2003318449A (en) 2003-11-07
JP4030463B2 JP4030463B2 (en) 2008-01-09

Family

ID=29546145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003141765A Expired - Fee Related JP4030463B2 (en) 2003-05-20 2003-05-20 LED light source and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP4030463B2 (en)

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006310856A (en) * 2005-04-27 2006-11-09 Samsung Electro Mech Co Ltd Lcd backlight unit using light-emitting diode
WO2007086229A1 (en) 2006-01-26 2007-08-02 Sony Corporation Light source device and display device
JP2007243225A (en) * 2007-06-20 2007-09-20 Sony Corp Light source apparatus and display apparatus
JP2008021650A (en) * 2006-07-10 2008-01-31 Samsung Electro-Mechanics Co Ltd Direct-type illumination backlight apparatus
JP2008034806A (en) * 2006-07-31 2008-02-14 Cree Inc Light emitting diode package element provided with internal meniscus for disposing lens without forming bubbles
WO2010021346A1 (en) * 2008-08-20 2010-02-25 三菱化学株式会社 Semiconductor light emitting device and method for manufacturing the same
JP2010050235A (en) * 2008-08-20 2010-03-04 Mitsubishi Chemicals Corp Semiconductor light emitting device, and method for manufacturing the same
KR100973956B1 (en) 2007-03-13 2010-08-05 샤프 가부시키가이샤 Semiconductor light emitting device and multiple lead frame for semiconductor light emitting device
JP2011077084A (en) * 2009-09-29 2011-04-14 Rohm Co Ltd Led lighting system and liquid crystal display device
JP2012059921A (en) * 2010-09-09 2012-03-22 Citizen Holdings Co Ltd Semiconductor light-emitting device and manufacturing method of the same
JP2012084900A (en) * 2007-10-31 2012-04-26 Cree Inc Light emitting diode package and manufacturing method thereof
US8507924B2 (en) 2004-07-02 2013-08-13 Cree, Inc. Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming
US8519437B2 (en) 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
JP2013254937A (en) * 2012-05-09 2013-12-19 Rohm Co Ltd Semiconductor light emitting device
US8679876B2 (en) 2006-11-15 2014-03-25 Cree, Inc. Laser diode and method for fabricating same
US8735920B2 (en) 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
US8748915B2 (en) 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
US9035439B2 (en) 2006-03-28 2015-05-19 Cree Huizhou Solid State Lighting Company Limited Apparatus, system and method for use in mounting electronic elements
US9041139B2 (en) 2007-01-19 2015-05-26 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US9093357B2 (en) 2010-01-22 2015-07-28 Sharp Kabushiki Kaisha Light emitting device
US9231023B2 (en) 2009-11-13 2016-01-05 Sharp Kabushiki Kaisha Light-emitting device having a plurality of concentric light transmitting areas
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US9722158B2 (en) 2009-01-14 2017-08-01 Cree Huizhou Solid State Lighting Company Limited Aligned multiple emitter package
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces

Cited By (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8507924B2 (en) 2004-07-02 2013-08-13 Cree, Inc. Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming
US8148897B2 (en) 2005-04-27 2012-04-03 Samsung Electro-Mechanics Co., Ltd. Backlight unit for LCD using LED
JP2006310856A (en) * 2005-04-27 2006-11-09 Samsung Electro Mech Co Ltd Lcd backlight unit using light-emitting diode
US7728343B2 (en) 2006-01-26 2010-06-01 Sony Corporation Light source apparatus and display apparatus and white resist layer
EP1978566A1 (en) * 2006-01-26 2008-10-08 Sony Corporation Light source device and display device
EP1978566A4 (en) * 2006-01-26 2013-11-06 Sony Corp Light source device and display device
JP2007201171A (en) * 2006-01-26 2007-08-09 Sony Corp Light source device and display device
WO2007086229A1 (en) 2006-01-26 2007-08-02 Sony Corporation Light source device and display device
US9035439B2 (en) 2006-03-28 2015-05-19 Cree Huizhou Solid State Lighting Company Limited Apparatus, system and method for use in mounting electronic elements
US8748915B2 (en) 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
JP2008021650A (en) * 2006-07-10 2008-01-31 Samsung Electro-Mechanics Co Ltd Direct-type illumination backlight apparatus
US7887225B2 (en) 2006-07-10 2011-02-15 Samsung Led Co., Ltd. Direct-type backlight unit having surface light source
JP2008034806A (en) * 2006-07-31 2008-02-14 Cree Inc Light emitting diode package element provided with internal meniscus for disposing lens without forming bubbles
US8735920B2 (en) 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
US8679876B2 (en) 2006-11-15 2014-03-25 Cree, Inc. Laser diode and method for fabricating same
US9041139B2 (en) 2007-01-19 2015-05-26 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US9711703B2 (en) 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US9666776B2 (en) 2007-03-13 2017-05-30 Sharp Kabushiki Kaisha Semiconductor light emitting device and multiple lead frame for semiconductor light emitting device
US8415681B2 (en) 2007-03-13 2013-04-09 Sharp Kabushiki Kaisha Semiconductor light emitting device and multiple lead frame for semiconductor light emitting device
KR100973956B1 (en) 2007-03-13 2010-08-05 샤프 가부시키가이샤 Semiconductor light emitting device and multiple lead frame for semiconductor light emitting device
US9224930B2 (en) 2007-03-13 2015-12-29 Sharp Kabushiki Kaisha Semiconductor light emitting device and multiple lead frame for semiconductor light emitting device
JP2007243225A (en) * 2007-06-20 2007-09-20 Sony Corp Light source apparatus and display apparatus
US8519437B2 (en) 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US10892383B2 (en) 2007-10-31 2021-01-12 Cree, Inc. Light emitting diode package and method for fabricating same
US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
JP2012084900A (en) * 2007-10-31 2012-04-26 Cree Inc Light emitting diode package and manufacturing method thereof
US11791442B2 (en) 2007-10-31 2023-10-17 Creeled, Inc. Light emitting diode package and method for fabricating same
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
JP2010050235A (en) * 2008-08-20 2010-03-04 Mitsubishi Chemicals Corp Semiconductor light emitting device, and method for manufacturing the same
WO2010021346A1 (en) * 2008-08-20 2010-02-25 三菱化学株式会社 Semiconductor light emitting device and method for manufacturing the same
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
US9722158B2 (en) 2009-01-14 2017-08-01 Cree Huizhou Solid State Lighting Company Limited Aligned multiple emitter package
JP2011077084A (en) * 2009-09-29 2011-04-14 Rohm Co Ltd Led lighting system and liquid crystal display device
US9607970B2 (en) 2009-11-13 2017-03-28 Sharp Kabushiki Kaisha Light-emitting device having a plurality of concentric light transmitting areas
US9231023B2 (en) 2009-11-13 2016-01-05 Sharp Kabushiki Kaisha Light-emitting device having a plurality of concentric light transmitting areas
US9093357B2 (en) 2010-01-22 2015-07-28 Sharp Kabushiki Kaisha Light emitting device
US9425236B2 (en) 2010-01-22 2016-08-23 Sharp Kabushiki Kaisha Light emitting device
US9679942B2 (en) 2010-01-22 2017-06-13 Sharp Kabushiki Kaisha Light emitting device
US9312304B2 (en) 2010-01-22 2016-04-12 Sharp Kabushiki Kaisha LED illuminating device comprising light emitting device including LED chips on single substrate
US9966367B2 (en) 2010-01-22 2018-05-08 Sharp Kabushiki Kaisha Light emitting device
JP2012059921A (en) * 2010-09-09 2012-03-22 Citizen Holdings Co Ltd Semiconductor light-emitting device and manufacturing method of the same
US9831403B2 (en) 2012-05-09 2017-11-28 Rohm Co., Ltd. Semiconductor light-emitting device
US10305005B2 (en) 2012-05-09 2019-05-28 Rohm Co., Ltd. Semiconductor light-emitting device
JP2013254937A (en) * 2012-05-09 2013-12-19 Rohm Co Ltd Semiconductor light emitting device
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces

Also Published As

Publication number Publication date
JP4030463B2 (en) 2008-01-09

Similar Documents

Publication Publication Date Title
JP4030463B2 (en) LED light source and manufacturing method thereof
JPH10144963A (en) Led light source and its manufacture
US10454003B2 (en) Light emitting device and manufacturing method thereof
TWI495143B (en) Power surface mount light emitting die package
TWI497746B (en) Led package and method for fabricating the same
JP5520243B2 (en) Power surface mounted light emitting die package
JP3431038B2 (en) LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, AND LED HEAD MANUFACTURING METHOD
US8212274B2 (en) Light-emitting diode package and manufacturing method thereof
WO2007142778A2 (en) Packaged light emitting devices including multiple index lenses and methods of fabricating the same
JP2014197708A (en) Overmolded lens over led die
US20070205425A1 (en) Semiconductor light-emitting device
US20070018191A1 (en) Side view LED with improved arrangement of protection device
JP2006066786A (en) Light emitting diode
JP2007311445A (en) Semiconductor light-emitting device, and manufacturing method thereof
JP2006278675A (en) Semiconductor light-emitting device
JP6541963B2 (en) Light emitting device and method of manufacturing the same
JP2010272565A (en) Leadframe, method of manufacturing the leadframe, and semiconductor light emitting device using the leadframe
JP2000174350A (en) Optical semiconductor module
JP2018006760A (en) Sensor package structure
JP2004200208A (en) Light-emitting device
JP2016162811A (en) Light-emitting device and manufacturing method of the same
TW200933826A (en) Light emitting diode package
KR100563373B1 (en) Light-emitting diode with a reflector
KR20070117749A (en) Lamp having surface mounted light emitting diode and manufacturing method of the same
US20240072226A1 (en) Semiconductor device and method of manufacturing the same

Legal Events

Date Code Title Description
RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20051227

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060425

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060623

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070626

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070822

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070918

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20071016

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101026

Year of fee payment: 3

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101026

Year of fee payment: 3

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101026

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees