JP2003309216A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which comprises a thinned semiconductor element and secures reliability by preventing damages near the outer edge of the semiconductor element. <P>SOLUTION: The semiconductor device 1 comprises the semiconductor element 2 which is thinned, the surface of which is formed with a plurality of terminals for external connection and which has a bumper 4 having rigidity higher than that of the semiconductor element 2 bonded on the rear face thereof via resin 5. The external shape of the bumper 4 is larger than that of the semiconductor element 2, and the side face 2b of the semiconductor element 2 is covered by the resin 5 for forming a reinforcing section for reinforcing the edge of the semiconductor element 2. Due to the existence of the reinforcing section, damages near the outer edge of the semiconductor element 2 are prevented when the semiconductor device 1 is mounted, while securing reliability after mounting. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a structure having higher rigidity than the semiconductor element is bonded to the back surface of the semiconductor element with a resin.

[0002]

2. Description of the Related Art As a product mounting structure for mounting a semiconductor device manufactured by packaging semiconductor elements on a circuit board, a structure in which a protruding electrode such as a solder bump formed on the semiconductor device is bonded to the substrate is known. There is. In such a mounting structure, the stress level at the time of heat cycle required to realize the bonding reliability after mounting is reduced, that is, due to the difference in the coefficient of thermal expansion between the semiconductor and the work due to the environmental temperature change after mounting. For the purpose of suppressing the stress generated at the joint between the semiconductor element and the solder bump to be low, attempts have been made to make the semiconductor element as thin as 150 μm or less as much as possible.

A mounting structure composed of such a thinned semiconductor element will be described with reference to the drawings. Figure 11
11A is a sectional view of a conventional mounting structure, and FIG. 11B is
It is a figure which shows the deformation | transformation state of the semiconductor element in the conventional mounting structure. In FIG. 11A, the semiconductor device 1 is mounted on the substrate 10, and the electrodes 10 a formed on the upper surface of the substrate 10 have bumps provided on the circuit forming surface of the semiconductor element 2 with solder as a forming material. 3 are joined. As described above, the semiconductor element 2 is thinned for the purpose of suppressing the stress generated at the joint between the semiconductor element and the bump to be low.

FIG. 11B shows a mounting structure in which the semiconductor device 1 having the semiconductor element 2 subjected to such a thinning process is mounted on the substrate 10, and heat shrinkage stress is generated in the substrate 10 after the reflow. It shows the state. Since the semiconductor element 2 is thinned and easily bends, the semiconductor element 2 deforms following the contraction displacement of the substrate 10. In the mounting structure in which the semiconductor element 2 having a thickness of 150 μm or less is used by further reducing the thickness, the bending deformation of the semiconductor element 2 becomes a bending shape in which the semiconductor element 2 is concave between the bumps 3 ( It can be seen that as the thinning progresses, better followability is realized (see arrow a). It has been proved that this can effectively reduce the level of stress generated at the joint between the semiconductor element 2 and the bump 3.

[0005]

However, in the mounting structure composed of the thinned semiconductor element 2, the following defects have been confirmed empirically and by numerical analysis. As shown in FIG. 11B, the semiconductor element 2 has a sharply increased flexure outside the outermost bump 3 (arrow b).
As a result, a crack occurs on the lower surface of the semiconductor element 2 near the outermost periphery of the bump 3 and the semiconductor element 2 breaks from the crack. That is, as the thickness of the semiconductor element is reduced, the stress generated in the solder bump is reduced, but there is a problem that local damage occurs near the outer edge of the semiconductor element.

Therefore, the present invention provides a semiconductor device having a thinned semiconductor element, which is capable of ensuring reliability by preventing damage to the semiconductor element near the outer edge. To aim.

[0007]

According to another aspect of the present invention, there is provided a semiconductor device in which a structure having a higher rigidity than the semiconductor element is adhered to the back surface of the semiconductor element having a plurality of external connection terminals formed on the front surface with a resin. In the semiconductor device, an outer shape of the structure is made larger than an outer shape of the semiconductor element, and a side surface of the semiconductor element is covered with the resin to form a reinforcing portion for reinforcing an edge portion of the semiconductor element.

A semiconductor device according to a second aspect is the semiconductor device according to the first aspect, wherein the reinforcing portion is formed over the entire circumference of the semiconductor element.

A semiconductor device according to a third aspect is the semiconductor device according to the first aspect, wherein the reinforcing portion is formed at a corner of the semiconductor element.

A semiconductor device according to a fourth aspect is the semiconductor device according to the first aspect, wherein the semiconductor element is bonded to the structural body in a state where the resin allows deformation of the semiconductor element in a thickness direction. To do.

A semiconductor device according to a fifth aspect is the semiconductor device according to the first aspect, wherein the thickness of the semiconductor element is 1
It is formed in the range of 0 to 150 μm.

A semiconductor device according to a sixth aspect is the semiconductor device according to the first aspect, wherein bumps are formed on a plurality of external connection terminals of the semiconductor element.

A semiconductor device according to a seventh aspect is the semiconductor device according to the first aspect, wherein a rewiring layer is provided on an electrode forming surface of the semiconductor element, and a rewiring layer is provided on a surface of the rewiring layer. A plurality of electrodes electrically connected to the external connection terminals by the formed internal wiring were provided.

A semiconductor device according to an eighth aspect is the semiconductor device according to the seventh aspect, wherein bumps are formed on the plurality of electrodes.

According to the present invention, the outer shape of the structure bonded to the semiconductor element via the resin is made larger than the outer shape of the semiconductor element, and the side surface of the semiconductor element is covered with the resin to reinforce the edge portion of the semiconductor element. By forming the reinforcing portion, it is possible to prevent the semiconductor element from being damaged near the outer edge portion and ensure the reliability.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) FIG. 1A is a perspective view of a semiconductor device according to a first embodiment of the present invention, and FIG.
1 is a partial cross-sectional view of the semiconductor device according to the first embodiment of the present invention, FIG. 2 is a process explanatory diagram of a method for assembling the semiconductor device according to the first embodiment of the present invention, and FIG. 3 is a semiconductor device according to the first embodiment of the present invention. 4 is a perspective view of a plate-shaped member used for the above, FIG. 4 is a perspective view of an electronic component mounting apparatus used for assembling the semiconductor device according to the first embodiment of the present invention, and FIG. 5 is a semiconductor device according to the first embodiment of the present invention. 6 is a perspective view of a dicing device used for assembling the semiconductor device, FIG. 6 is a partial sectional view of the dicing device used for assembling the semiconductor device according to the first embodiment of the present invention, and FIG. 7A is an embodiment of the present invention. 1 is a sectional view of the mounting structure of FIG. 1, FIG. 7B is a partial sectional view of the mounting structure of the first embodiment of the present invention, and FIG. 8A is a perspective view of the semiconductor device of the first embodiment of the present invention. 8B is a plan view of the semiconductor device according to the first embodiment of the present invention.

First, a semiconductor device will be described with reference to FIG. 1A and 1B, the semiconductor device 1
Has a structure in which a bumper 4 (structure) is adhered to the back surface of the semiconductor element 2 with a resin 5, and a plurality of electrodes 2a serving as external connection terminals formed along the edge of the front surface of the semiconductor element 2. The bumps 3 are formed on the top.

Here, the semiconductor element 2 is in a state after being thinned by a method such as mechanical polishing or etching. In general, in a state where a semiconductor element is mounted on a substrate via bumps, the smaller the thickness dimension of the semiconductor element, the better the bonding reliability after mounting. This is because even if stress concentrates on the joints of the bumps 3 due to the difference in stress between the semiconductor element 2 and the substrate, the semiconductor element 2 itself deforms (deflects) in the thickness direction to disperse the stress. Because. Therefore, in the present embodiment, as described above, the semiconductor element 2
Is thinned to set the thickness t1 to be in the range of 10 to 150 μm so that deformation (deflection) in the thickness direction is possible.

In the thinning process, the surface opposite to the circuit forming surface of the semiconductor element 2 is roughly processed by mechanical polishing using a grindstone or the like, and finished by dry etching or wet etching with a chemical solution. When mechanical polishing is performed, a damage layer having many microcracks is formed on the back surface. This damage layer is a factor that reduces the bending strength of the semiconductor element, but the bending strength of the semiconductor element 2 can be increased by removing this damage layer by finishing.

The bumper 4 facilitates stable holding of the semiconductor device 1 during handling when the semiconductor device 1 is mounted, and protects the semiconductor device 1 mounted on a substrate or the like from external force. Is to have. Therefore, the bumper 4 is made of a structural material such as metal, ceramic, or resin, and has a shape that satisfies the above functions, that is, a thickness t that has a higher rigidity than the semiconductor element 2.
In step 2, the one processed into an outer shape larger than the outer shape of the semiconductor element 2 is used.

Here, the resin 5 for bonding the semiconductor element 2 to the bumper 4 is made of a material having a low elastic coefficient and easily deformed, and the semiconductor element 2 is allowed to deform in the thickness direction. Is bonded to the bumper 4. As a result, in the state where the semiconductor device 1 is mounted on the substrate, the semiconductor element 2 is deformed following the deformation of the substrate.

As shown in FIG. 1, the resin 5 is used for the semiconductor element 2
The resin 5a protrudes from the end portions of the four sides over the entire circumference of the above, and the protruding resin 5a has a shape that crawls along the side surface 2b of the semiconductor element 2 and partially covers the side surface 2b. The resin 5a that covers the side surface 2b forms a reinforcing portion that reinforces the edge portion of the semiconductor element 2.

At the edge of the semiconductor element 2, minute cracks generated when the semiconductor wafer is diced and cut into individual semiconductor elements 2 are likely to remain as they are, and the cracks may cause damage. Resin 5 that covers the side surface 2b
a is a semiconductor element 2 including such minute cracks.
Of the semiconductor element 1 is mounted on the substrate 10 as described later, and the semiconductor element 2 is excessively deformed due to the stress generated by the difference in thermal deformation between the substrate and the semiconductor element 2 as described later. It has a function to prevent it.

Next, a method of assembling the semiconductor device 1 will be described with reference to FIG. In FIG. 2A, the plate member 6 is an intermediate component before the bumper 4 forming a part of the semiconductor device 1 is separated. As shown in FIG. 3, the plate-shaped member 6 is provided with partition portions 6a protruding in a lattice shape on the upper surface thereof, and the recessed portion 6b surrounded by the partition portions 6a is a semiconductor element bonding position where the semiconductor element 2 is bonded. Has become. The partition portion 6a is a dam portion that restricts the resin 5 from spreading beyond the semiconductor bonding position to the periphery when the resin 5 for bonding the semiconductor element 2 is applied to the recess 6b as described later. .

A groove 6c is formed on the lower surface of the plate member 6 at a position corresponding to the partition 6a. The groove portion 6c is formed by cutting a grid-like groove from the lower surface side of the plate-shaped member 6 having a thickness dimension t4, whereby the thickness dimension t3 from the upper surface is a thin portion smaller than t4. This thin part is
It coincides with the cutting position when the plate member 6 is cut and separated into the bumper 4.

Next, as shown in FIG. 2B, the plate member 6
The resin 5 is applied to each of the recesses 6b by the dispenser 7, and thus the resin 5 for bonding the semiconductor element 2 is supplied (first step). In applying the resin 5, the recess 6
Since the partition portion 6a as a dam portion is provided around b, it is possible to prevent the resin 5 from spreading beyond the semiconductor bonding position to the periphery.

In addition, upon application, when the resin 5 spread by the semiconductor element 2 after application protrudes from the end portion of the semiconductor element 2 to the outside, as described above,
A proper amount of resin 5 is dispensed from the dispenser 7 so that there is no excess or deficiency in covering the side surface 2b of the dispenser 7.

After that, the plate-shaped member 6 to which the resin 5 is supplied is sent to the semiconductor element bonding step. In this semiconductor element bonding step, as shown in FIGS. 2C and 2D, the semiconductor element 2 is mounted on the resin 5 applied to the plate member 6 (mounting step), and then the resin 5 is heated. (Heating step), the resin 5 is thermally cured to bond the back surfaces of the plurality of semiconductor elements 2 to the recesses 6b of the plate-shaped member 6 via the resin 5 in an aligned state (second step).

An electronic component mounting apparatus used for mounting the semiconductor element 2 in this mounting step will be described with reference to FIG. In FIG. 4, the component supply table 11 is equipped with an adhesive sheet 12 to which the semiconductor elements 2 are attached in a grid pattern. A semiconductor element peeling mechanism 13 is arranged below the component supply table 11, and the semiconductor element peeling mechanism 13 is driven by a semiconductor element peeling mechanism driving unit 14 to cause the ejector pin mechanism 13 a to move the lower surface of the adhesive sheet 12. When the semiconductor element 2 is picked up by the mounting head 16, the semiconductor element 2 is separated from the upper surface of the adhesive sheet 12.

A board holding portion 15 is arranged beside the component supply table 11, and a plate-shaped member 6 after the resin is supplied is held on the board holding portion 15. A mounting head 16 driven by a mounting head drive unit 19 is arranged above the component supply table 11 and the substrate holding unit 15. The mounting head 16 includes the suction nozzle 8 and picks up the semiconductor element 2 from the adhesive sheet 12 and mounts it on the plate-shaped member 6 on the substrate holding portion 15.

The camera 1 is provided above the parts supply table 11.
7 is arranged, and the camera 17 images the semiconductor element 2 attached to the adhesive sheet 12. The position of the semiconductor element 2 on the adhesive sheet 12 is recognized by subjecting the image captured by the camera 17 to the recognition processing by the semiconductor element recognition unit 20. The position recognition result is sent to the control unit 21 and the semiconductor element peeling mechanism driving unit 14.
The control unit 21 controls the mounting head drive unit 19 based on the position recognition result, so that when the mounting head 16 picks up the semiconductor element 2, the suction nozzle 8 and the ejector pin mechanism 13a are positioned on the semiconductor element 2 to be picked up. Be matched.

A camera 18 is arranged above the substrate holding portion 15, and the camera 18 images the plate member 6 held by the substrate holding portion 15. The mounting position recognition unit 22 performs recognition processing on the image captured by the camera 18 to detect the semiconductor element mounting position on the plate-shaped member 6. The position recognition result is sent to the control unit 21, and the control unit 21 controls the mounting head drive unit 19 based on the position recognition result, so that the semiconductor element 2 by the mounting head 16 is controlled.
When mounting the semiconductor element 2 held by the suction nozzle 8
Is aligned with the detected mounting position.

When the semiconductor element 2 is mounted on the plate-like member 6 by this electronic component mounting apparatus, as shown in FIG. 2C, the suction nozzle 8 is attached to the front surface side of the semiconductor element 2 on which the bumps 3 are formed. It is adsorbed and held by and the back surface of the semiconductor element 2 is pressed against the resin 5. At this time, by adjusting the pressing height of the suction nozzle 8 according to the coating amount of the resin 5, the resin 5 protruding to the outside of the edge of each semiconductor element 2 (see the arrow A) is removed from the side surface 2 b of the semiconductor element 2. To cover the side surface 2b (the resin 5a shown in FIG. 1B).
reference). At this time, if the end portion on the back surface side of the semiconductor element 2 in which damage during dicing is likely to remain is completely covered and reinforced, the side surface 2b may be completely covered or only partially covered. Either way is fine.

In the present embodiment, the semiconductor elements 2 are mounted one by one while being pressed against the resin 5 by the mounting head 16, so that the mounting load (pressing force) can be made smaller than in the case of collectively mounting (pasting). . Therefore, a die bonding device, a chip mounter, or the like can be used as the electronic component mounting device.

The plate-like member 6 on which the semiconductor element 2 is mounted in this manner is sent to the heating furnace. Then, by heating at a predetermined temperature here, the resin 5 is thermoset as shown in FIG. At this time, the resin 5 protruding to the outside of the edge of each semiconductor element 2 is temporarily reduced in viscosity during the process of thermosetting, so that the surface tension causes the semiconductor element 2 to swell.
Crawl further to the side surface 2b of the above, and it is hardened with the shape covering the side surface 2b. As a result, after the resin 5 is cured, the resin 5a as the reinforcing portion shown in FIG. 1B is formed. Then, the second step is completed.

In the above embodiment, the resin 5 is thermally cured by sending the plate member 6 to the heating furnace after mounting the semiconductor element 2. However, the mounting head 16 having a heating means built-in is used. Alternatively, the semiconductor element 2 may be heated while being mounted.

When the heating is carried out by the mounting head 16, the dedicated heating step shown in FIG. 2D may be omitted. In this case, the heating furnace can be omitted and the facility can be simplified. There is an advantage that you can. However, in this case, the takt time of the mounting head 16 is limited by the thermosetting time, and thus the overall productivity is lower than that in the case where the mounting step and the heating step are performed separately. Also, resin 5
As an example, in the above embodiment, a thermosetting resin is used, but a thermoplastic resin material may be used instead.

The plate-shaped member 6 thus cured with the resin 5 is sent to the cutting step, where the plate-shaped member 6 to which the semiconductor element 2 is bonded is rotated by a rotary cutting blade as shown in FIG. 2 (e). The semiconductor element 2 is cut at a cutting position between the adjacent semiconductor elements 2 by 24a (third step). As a result, the plate-shaped member 6 is cut and separated into bumpers 4 for each semiconductor element 2, and the semiconductor device 1
The assembly of is completed.

This cutting step will be described with reference to FIGS. FIG. 5 shows a dicing device used for this cutting. On the upper surface of the substrate fixing portion 23, the plate-shaped member 6 on which the semiconductor element 2 is mounted and the resin curing is completed is placed on the substrate fixing portion 23. A cutting head 24 having a rotary cutting blade 24a is disposed above the substrate fixing portion 23, and the plate is obtained by moving the cutting head 24 in the X direction and the Y direction while rotating the rotary cutting blade 24a. The strip-shaped member 6 is cut along a cutting position that coincides with the groove 6c.

As shown in FIG. 6, a suction holding portion 25 is provided on the upper surface of the substrate fixing portion 23 at each position corresponding to the semiconductor element 2 on the plate-shaped member 6, and the suction holding portion 25 has an upper surface. Has a suction groove 25a. The suction groove 25a is
The suction holes 23 a are provided inside the substrate fixing portion 23, and the suction holes 23 a are further connected to a vacuum suction source 26. By driving the vacuum suction source 26 with the lower surface of the plate-shaped member 6 in contact with the suction-holding portion 25, the plate-shaped member 6 is suction-held by the suction-holding portion 25, whereby the position of the plate-shaped member 6 is changed. Is fixed.

The rotary cutting blade 24a is positioned on the partition 6a of the plate-like member 6 whose position is fixed in this way, and the rotary cutting blade 24a is lowered while being rotated, whereby the thin wall in the groove 6c is formed. The part is cut. At this time, by using the rotary cutting blade 24a having a blade width smaller than the interval between the adjacent semiconductor elements 2, the bumper 4 after the plate-shaped member 6 is separated into individual pieces protrudes from the end surface of the semiconductor element 2. Cut in shape. Therefore, in the separated semiconductor device 1, the outer shape of the bumper 4 is larger than the outer shape of the semiconductor element 2.

Further, in this cutting, since the groove portion 6c is formed in the lower surface in advance, the cutting allowance by the rotary cutting blade 24a is reduced. As a result, the required lowering amount of the rotary cutting blade 24a in the cutting process can be minimized, and an accident that the cutting edge comes into contact with the substrate fixing portion 23 and is damaged when the cutting blade is lowered can be prevented.

Next, an electronic component mounting structure formed by mounting the above-described semiconductor device 1 on a substrate will be described with reference to FIG. As shown in FIG. 7A, the semiconductor device 1 includes a substrate 10
The bumps 3 are soldered and connected to the electrodes 10 a formed on the upper surface of the substrate 10 to be mounted on the substrate 10. Figure 7
(B) shows a deformed state of the semiconductor element 2 located outside the bump 3. In the structure in which the thinned semiconductor element 2 is bonded to the substrate 10 via the bump 3 as shown in the present embodiment, the bumps are generated due to the stress generated by the difference in thermal deformation between the semiconductor element 2 and the substrate 10. The range from 3 to the outside tends to largely bend to the substrate 10 side (see the semiconductor element 2 shown by the broken line). Along with this deformation, a high level of surface stress is generated on the lower surface of the semiconductor element 2 near the outside of the bump 3, which may cause damage to the semiconductor element 2.

On the other hand, as shown in this embodiment,
When the semiconductor device 1 reinforced by the resin 5a covering the side surface 2b of the semiconductor element 2 is mounted on the substrate 10, the downward bending of the semiconductor element 2 in the area outside the outermost bump 3 is significantly reduced. It That is, the resin 5a covers the side surface 2b of the semiconductor element 2 and acts to prevent excessive bending deformation of the semiconductor element 2. By this action, downward bending deformation of the semiconductor element 2 can be prevented, and damage due to bending deformation of the semiconductor element 2 can be prevented.

As in the semiconductor device 1A shown in FIG. 8, the protrusion of the resin 5a from the edge of the semiconductor element 2 is limited to the diagonal direction of the semiconductor element 2, and the side surface of the semiconductor element 2 is reinforced by the resin 5a. The parts may be formed only at the corners of the semiconductor element 2. In this case, FIG. 2 (b)
When the resin 5 is applied by the dispenser 7, the application locus of the dispenser 7 is set in an X shape so that the resin 5 is applied only in the range shown in FIG. Control. By limiting the formation area of the reinforcing portion to the corner portion of the semiconductor element 2 as described above, it is possible to intensively reinforce the corner portion which is most likely to be damaged in the mounted state after the semiconductor device is completed.

(Embodiment 2) FIG. 9 is a process explanatory view of a method for assembling a semiconductor device according to Embodiment 2 of the present invention. In the second embodiment of the present invention, the first resin is supplied to the plate-shaped member.
In the process, a sheet-shaped resin is attached in advance without using a dispenser.

In FIG. 9A, the plate-shaped member 6A has a configuration in which the partition 6a on the upper surface of the plate-shaped member 6 shown in the first embodiment is removed, and the lower surface of the plate-shaped member 6A has the same shape. A groove 6c is formed. The resin sheet 5A is attached to the upper surface of the plate member 6A. The resin sheet 5A is formed by molding a resin material similar to the resin 5 used in the first embodiment into an adhesive sheet, and is attached to the plate-shaped member 6A by the adhesiveness of the resin 5 itself.

After that, the plate-like member 6 to which the resin sheet 5A is attached is sent to the semiconductor element bonding step. In this semiconductor element bonding step, as shown in FIGS. 9B and 9C, the semiconductor element 2 is mounted on the resin sheet 5A attached to the plate-shaped member 6 (mounting step), and then the resin sheet 5A. By heating (heating step) and thermosetting the resin component of the resin sheet 5A, the back surface sides of the plurality of semiconductor elements 2 are adhered to the plate member 6 in an aligned state via the thermoset resin sheet 5A. (Second step).

In the above heating step, the resin component of the resin sheet 5A is thermoset by being heated at a predetermined temperature by the heating furnace. At this time, the resin 5 located on the outer side of the edge of each semiconductor element 2 temporarily decreases in viscosity during the process of thermosetting, thereby increasing the fluidity and crawling to the side surface 2b of the semiconductor element 2 due to surface tension. Go up. Then, by continuing heating further, the resin component of the resin sheet 5A is cured with the shape covering the side surface 2b. As a result, after the resin sheet 5A is cured, as shown in FIG.
Resin 5a is formed as a reinforcing portion shown in FIG. Then, the second step is completed.

The plate-shaped member 6A thus completely cured of the resin sheet 5A is sent to the cutting step, where the plate-shaped member 6A to which the semiconductor element 2 is bonded is cut between the adjacent semiconductor elements 2. (Third step). As a result, the plate-shaped member 6A is cut and separated into bumpers 4 for each semiconductor element 2, and the assembly of the semiconductor device 1 is completed.

(Third Embodiment) FIG. 10A is a perspective view of a semiconductor device according to a third embodiment of the present invention, and FIG. 10B is a partial sectional view of the semiconductor device according to the third embodiment of the present invention. is there.

In FIG. 10A, the semiconductor device 1B has a structure in which a bumper 4 (structure) is adhered to the back surface of the semiconductor element 30 with a rewiring layer by a resin 5 and the semiconductor element 1B with a rewiring layer is formed. A plurality of bumps 3 are formed in a grid pattern on the surface. As shown in FIG. 9B, the semiconductor element 30 with a rewiring layer has a rewiring layer on the upper surface (electrode forming surface) of the thinned semiconductor element 2A as in the semiconductor element 2 according to the first embodiment. 9 is formed.

Electrodes 2a, which are terminals for external connection, are formed on the edges of the surface of the semiconductor element 2A.
Are electrically connected to the electrodes 9a formed by the number corresponding to the electrodes 2a on the surface of the redistribution layer 9 and the internal wiring 9b. The bumps 3 for mounting the semiconductor device 1B are formed on the electrodes 9a.

In the third embodiment, by providing the rewiring layer 9, it is possible to form a larger number of bumps 3 in the same projected area as compared with the semiconductor device 1 shown in the first embodiment. High-density mounting is possible. To assemble this semiconductor device 1B, the semiconductor element 2 may be replaced with the semiconductor element 30 with the rewiring layer in the method of assembling the semiconductor device shown in the first and second embodiments.

As a result, on the side surface 30a of the semiconductor element 30 with a rewiring layer, a reinforcing portion is formed in which the protruding resin 5a covers the side surface 30a. In the semiconductor device 1B having such a configuration, the side surface 30a of the semiconductor element 30 with a rewiring layer is formed.
By forming the reinforcing portion covering the above, the bending deformation that occurs at the edge of the semiconductor element 30 with a rewiring layer after mounting as described above is prevented, and the breakage of the internal wiring 9b in the rewiring layer 9 is prevented. You can

[0056]

According to the present invention, the outer shape of the structure adhered to the semiconductor element via the resin is made larger than the outer shape of the semiconductor element, and the side surface of the semiconductor element is covered with the resin to form the edge portion of the semiconductor element. Since the reinforcing portion that reinforces is formed, it is possible to prevent the semiconductor element from being damaged in the vicinity of the outer edge portion and to ensure the reliability after mounting.

[Brief description of drawings]

FIG. 1A is a perspective view of a semiconductor device according to a first embodiment of the present invention. FIG. 1B is a partial cross-sectional view of the semiconductor device according to the first embodiment of the present invention.

FIG. 2 is a process explanatory view of the method for assembling the semiconductor device according to the first embodiment of the present invention.

FIG. 3 is a perspective view of a plate-like member used in the semiconductor device according to the first embodiment of the present invention.

FIG. 4 is a perspective view of an electronic component mounting apparatus used for assembling the semiconductor device according to the first embodiment of the present invention.

FIG. 5 is a perspective view of a dicing device used for assembling the semiconductor device according to the first embodiment of the present invention.

FIG. 6 is a partial cross-sectional view of a dicing device used for assembling the semiconductor device according to the first embodiment of the present invention.

7A is a sectional view of the mounting structure according to the first embodiment of the present invention. FIG. 7B is a partial sectional view of the mounting structure according to the first embodiment of the present invention.

FIG. 8A is a perspective view of the semiconductor device according to the first embodiment of the present invention. FIG. 8B is a plan view of the semiconductor device according to the first embodiment of the present invention.

FIG. 9 is a process explanatory view of the method for assembling the semiconductor device according to the second embodiment of the present invention.

FIG. 10A is a perspective view of a semiconductor device according to a third embodiment of the present invention. FIG. 10B is a partial cross-sectional view of the semiconductor device according to the third embodiment of the present invention.

11A is a cross-sectional view of a conventional mounting structure, and FIG. 11B is a diagram showing a deformed state of a semiconductor element in the conventional mounting structure.

[Explanation of symbols]

1,1A, 1B Semiconductor device 2,2A semiconductor element 2a electrode 2b side 3 bumps 4 bumpers 5 resin 5A resin sheet 6 Plate members 6a partition 6b recess 7 dispensers

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Yoshiyuki Wada             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd.

Claims (8)

[Claims] 1. A semiconductor device comprising a semiconductor element having a plurality of external connection terminals formed on the front surface thereof, and a structure having a higher rigidity than the semiconductor element adhered to the back surface of the semiconductor element by resin. A semiconductor device, wherein a reinforcing portion is formed that is larger than the outer shape of the semiconductor element and covers the side surface of the semiconductor element with the resin to reinforce the edge portion of the semiconductor element. 2. The semiconductor device according to claim 1, wherein the reinforcing portion is formed over the entire circumference of the semiconductor element. 3. The semiconductor device according to claim 1, wherein the reinforcing portion is formed at a corner portion of the semiconductor element. 4. The semiconductor device according to claim 1, wherein the resin adheres the semiconductor element to the structural body while allowing the semiconductor element to deform in the thickness direction. 5. The semiconductor element has a thickness of 10 to 150 μm.
The semiconductor device according to claim 1, wherein the semiconductor device is formed in a range of m. 6. A bump is formed on a plurality of external connection terminals of the semiconductor element.
The semiconductor device described. 7. A rewiring layer is provided on an electrode forming surface of the semiconductor element, and an internal wiring formed in the rewiring layer is electrically connected to the external connection terminal on a surface of the rewiring layer. The semiconductor device according to claim 1, comprising a plurality of electrodes. 8. The semiconductor device according to claim 7, wherein bumps are formed on the plurality of electrodes.