JP2003309078A - Substrate treating apparatus - Google Patents

Substrate treating apparatus

Info

Publication number
JP2003309078A
JP2003309078A JP2002116265A JP2002116265A JP2003309078A JP 2003309078 A JP2003309078 A JP 2003309078A JP 2002116265 A JP2002116265 A JP 2002116265A JP 2002116265 A JP2002116265 A JP 2002116265A JP 2003309078 A JP2003309078 A JP 2003309078A
Authority
JP
Japan
Prior art keywords
boat
cap
reaction tube
base
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002116265A
Other languages
Japanese (ja)
Other versions
JP4342765B2 (en
Inventor
Shinya Morita
慎也 森田
Tomoshi Taniyama
智志 谷山
Hidenari Yoshida
秀成 吉田
Yoshikazu Takashima
義和 高島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Kokusai Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2002116265A priority Critical patent/JP4342765B2/en
Publication of JP2003309078A publication Critical patent/JP2003309078A/en
Application granted granted Critical
Publication of JP4342765B2 publication Critical patent/JP4342765B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vertical furnace which can maintain a boat perpendicular to a reaction tube while maintaining sealability of a reaction chamber even when a base is inclined when the boat is airtightly mounted in the chamber. <P>SOLUTION: The boat is fixed on a cap bearer, and the bearer is held parallel to a seal cap by a coupling bar provided perpendicularly to the cap. A base is fixed on a port side arm, and the cap is held by a plurality of elastic members arranged on the base such as, for example, springs. Thus, the cap is brought into contact with a flange of an inlet adapter by using the springs, maintained airtightly, and simultaneously the port is held parallel to an inside reaction tube and an outside reaction tube. <P>COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】 【0001】 【発明が属する技術分野】本発明は拡散やCVD等の化学
処理を行う基板処理装置に係わり、特に反応室の開口部
を閉塞する封止構造に関する。 【0002】 【従来の技術】半導体製造工程には、ウエハ等の基板上
に薄膜を形成し、或いは不純物の拡散などの処理をする
工程があり、斯かる処理を行う装置に縦型炉がある。 【0003】以下、図3により縦型炉の従来の反応室開
口部の封止構造の説明を行う。 【0004】ヒータベース13上に、上部が閉塞された
円筒状の断熱材14を配し、前記断熱材14の内側にヒ
ータ15を設ける。前記ヒータベース13の下には、イ
ンレットアダプタ4が取り付けられ、前記インレットア
ダプタ4の内鍔に、上部が閉塞された円筒状の外側反応
管16と、円筒形の内側反応管3が、それぞれ前記イン
レットアダプタ4に対し気密で垂直に配される。また、
前記インレットアダプタ4にはガス供給口25及び排気
口17が取り付けされる。 【0005】被処理物である基板、例えばウエハ9を水
平姿勢で多段に保持するボート8をキャップ受け7上に
固定し、前記キャップ受け7とサポートフランジ18、
ベース19とロガワアーム20をそれぞれ固定する。 【0006】前記サポートフランジ18とシールキャッ
プ6は、伸縮性を有する壁、例えばベローズ21を用い
て気密に取付けられる。前記シールキャップ6は、前記
ベース19上に配した複数の弾性部材、例えばスプリン
グ22により保持される。また、前記ロガワアーム20
は、昇降スライダ5に取り付けられ、昇降機構(図示せ
ず)により、前記ボート8を昇降可能にする。 【0007】前記シールキャップ6にOリング23を設
け、前記インレットアダプタ4の下部に水平に設けられ
たフランジ部24と接することで、前記インレットアダ
プタ4と前記シールキャップ6を気密に保持する。前記
昇降機構の上昇作用により、前記Oリング23が前記フ
ランジ部24に接触した後も、前記Oリング23と前記
フランジ部24との間の有効な接触圧を得るために、わ
ずかに前記昇降機構を上昇させ、前記スプリング22の
弾性力により、前記インレットアダプタ4と前記シール
キャップ6を気密に保持する。前記シールキャップ6と
前記インレットアダプタ4と前記外側反応管16で気密
な反応室を構成し、基板の処理を行う。 【0008】 【発明が解決しようとする課題】上記した従来の縦型炉
では、前記シールキャップ6にて前記反応室開口部を密
閉する際、前記ボート8及び前記ウエハ9等の重さと、
前記スプリング22の反力により、前記ベース19は、
矢印Aで示すように、前記昇降スライダ5より遠い方が
下がり、前記ベース19は水平状態でなくなる。それゆ
え、前記ボート8にも矢印Bの方向の傾きが伝播し、前
記ボート8は前記内側反応管3及び前記外側反応管16に
対し平行に挿入されず、前記基板内、及び前記基板間の
温度均一性が維持できなくなると共に、前記内側反応管
3との接触、或いは前記ウエハ9の脱落などの恐れがあ
った。また、取付け誤差などの理由により前記内側反応
管3が垂直に保持されていない場合、前記内側反応管3
と前記ボート8が接触する恐れがあった。 【0009】本発明は斯かる実情に鑑み、反応室のの気
密性を維持すると共に、前記ボート8が前記内側反応管
3及び前記外側反応管16に対し平行に挿入される基板
処理装置を提供するものである。 【0010】 【課題を解決するための手段】本発明は、基板を収容し
て処理する反応室と、前記基板を水平姿勢で多段に保持
する基板保持具と、反応室開口部を気密に閉塞する蓋体
と、前記基板保持具を反応室に挿入、引き出しする移動
機構と、と備えた基板処理装置において、前記基板保持
具は前記蓋体に支持され、前記移動機構と前記蓋体とは
複数の弾性部材を介して連結したことを特徴とする基板
処理装置である。即ち、ボートをキャップ受け上に固定
し、シールキャップに対し垂直に設けた連結棒にて、前
記キャップ受けを前記シールキャップに対し平行に保持
する。また、ロガワアーム上にベースを固定し、前記ベ
ース上に配した複数の弾性部材、例えばスプリングによ
り、前記シールキャップを保持する。これにより、スプ
リングを用いることで前記シールキャップはインレット
アダプタのフランジ部に当接し気密性の維持がなされる
と同時に、前記ボートを内側反応管及び外側反応管に対
し平行に保持できるものである。 【0011】 【発明の実施の形態】以下、図1、及び図2を参照しつ
つ本発明の実施の形態を説明する。 【0012】なお、図1中、図2中において、又は図3
中で示したものと同等のものには同符号を付し説明を省
略する。 【0013】図2により縦型炉を備えた半導体製造装置
の概略を説明する。 【0014】この半導体製造装置は、筐体1の内部上方
に、反応炉2が設置されており、前記反応炉2の内部に
内側反応管3(本図では見えず)、及び外側反応管16
(本図では見えず)を備えている。前記外側反応管16
は、上部が閉塞された円筒形状であり、その下部に円筒
形のインレットアダプタ4が取り付けられる。前記外側
反応管16の下方には昇降機構(本図では図示せず)が
設けられ、前記昇降機構の昇降スライダ5(本図では図
示せず)には、前記インレットアダプタ4下部の開口部
を閉塞し、気密な反応室を構成するシールキャップ6が
設けられる。前記シールキャップ6の上方に配したキャ
ップ受け7(本図では図示せず)には、石英又はSiC製
のボート8が設置されている。前記ボート8には被処理
物である基板、例えばウエハ9(本図では図示せず)が
水平姿勢で多段に載置される。 【0015】前記昇降機構の側方にはウエハ移載機10
が設置され、前記ウエハ移載機10のさらに側方に、カ
セットストッカ11が設置されている。前記カセットス
トッカ11は、ウエハカセット12を所要数格納できる
もので、ウエハ9の半導体製造装置への搬入、搬出は前
記ウエハカセット12に装填した状態で行われる。 【0016】ウエハ9の処理を行う場合は、前記昇降機
構を上昇側に駆動して、ウエハ9の載置される前記ボー
ト8を前記内側反応管3に挿入する。その際、同時に上
昇する前記シールキャップ6が最後に前記反応室の開口
部を閉塞することで、前記反応室内が気密に保たれる。
ヒータ15にてウエハ9を所望の温度に加熱し、前記ガ
ス供給口25より反応ガスを前記反応室内に導入するこ
とで、前記ウエハ9に所望の処理を行う。所定の処理が
完了すると、処理後のガスを前記排気口17から排出
し、前記昇降機構を用いて、前記ボート8を降下させ、
処理済のウエハ9を搬出する。 【0017】次に図1に本発明による反応室開口部の封
止構造の実施例を説明する。 【0018】ボート8をキャップ受け7上に固定し、シ
ールキャップ6に対し垂直に設けた連結棒27にて、前
記キャップ受け7を前記シールキャップ6に対し平行に
保持する。また、ロガワアーム20上にベース19を固
定し、前記ベース19上に配した複数の弾性部材、例え
ばスプリング22により、前記シールキャップ6を保持
する。前記スプリング22は、ボート8にウエハ9が全
部積載された状態でも、前記シールキャップ6を前記ベ
ース19から弾性力を保った状態で支持するのに十分な
強度を持っており、反応室開口部の密閉時以外は、前記
シールキャップ6の下部に設けられた鍔状のリング受け
28とベース19が当接し、前記ボートが不安定な状態
になることを防止する。 【0019】前記ロガワアーム20の一端に前記ベース
19を固定し、他端を前記昇降スライダ5に固定し、前
記ボート8を昇降可能にする。 【0020】前記ボート8にウエハ9を多段に保持し、
前記昇降機構により、前記ボート8を上昇させ、前記内
側反応管3に装填する。前記シールキャップ6にOリン
グ23を設け、インレットアダプタ4の下部に水平に設
けたフランジ部24と接することで、前記反応室を密閉
する。前記昇降機構の上昇作用により、前記Oリング2
3が前記フランジ部24に接触した後も、前記Oリング
23と前記フランジ部24との間の有効な接触圧を得る
ために、わずかに前記昇降機構を上昇させ、前記スプリ
ング22の弾性力により、前記反応室の下部を密閉さ
せ、所望の処理を行う。 【0021】このとき、従来と同様、前記ベース19の
前記昇降スライダ5より遠い方は、前記ボート8及びウ
エハ9などの重みと前記スプリング22の反力により、
矢印Aで示すように下がり、前記ベース19は水平を維
持できなくなるが、前記シールキャップ6は前記フラン
ジ部24に密着しているため、反応室内の気密性が保持
されると同時に、前記フランジ部と同一平面になる。そ
れゆえ、前記ボート8は前記フランジ部に垂直、即ち前
記内部反応管3及び前記外側反応管16に対し平行に挿
入される。 【0022】 【発明の効果】以上述べた如く本発明によれば、ボート
をキャップ受け上に固定し、シールキャップに対し垂直
に設けられた連結棒にて、キャップ受けをシールキャッ
プに対し平行に保持し、また、ロガワアーム上にベース
を固定し、ベース上に配した複数の弾性部材、例えばス
プリングにより、シールキャップを保持したので、反応
室開口部閉塞時、ベースに傾きが生じたとしても、スプ
リングの弾性力により、シールキャップをインレットア
ダプタのフランジ部に密着でき、反応室の気密性を維持
できるのと同時に、ボートをフランジ部に対し垂直、即
ちボートを反応管に平行に挿入でき、基板内、及び基板
間の温度均一性が図れ、反応管との接触、或いはウエハ
の脱落などの防止を可能にする。また、取付け誤差など
の理由により内側反応管が垂直に保持されていない場合
でも、内側反応管とボートの接触を防止する。
Description: BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a substrate processing apparatus for performing chemical processing such as diffusion or CVD, and more particularly to a sealing structure for closing an opening of a reaction chamber. 2. Description of the Related Art In a semiconductor manufacturing process, there is a process of forming a thin film on a substrate such as a wafer or performing a process such as diffusion of an impurity. An apparatus for performing such a process includes a vertical furnace. . [0003] A conventional sealing structure for an opening of a reaction chamber of a vertical furnace will be described with reference to FIG. [0004] A cylindrical heat insulating material 14 whose upper part is closed is disposed on a heater base 13, and a heater 15 is provided inside the heat insulating material 14. An inlet adapter 4 is attached below the heater base 13, and a cylindrical outer reaction tube 16 whose upper part is closed and a cylindrical inner reaction tube 3 are attached to the inner flange of the inlet adapter 4, respectively. It is arranged airtight and perpendicular to the inlet adapter 4. Also,
A gas supply port 25 and an exhaust port 17 are attached to the inlet adapter 4. A boat 8 for holding a substrate to be processed, for example, a wafer 9 in multiple stages in a horizontal position, is fixed on a cap receiver 7, and the cap receiver 7 and a support flange 18 are fixed.
The base 19 and the Loga arm 20 are fixed respectively. [0006] The support flange 18 and the seal cap 6 are hermetically attached using a stretchable wall, for example, a bellows 21. The seal cap 6 is held by a plurality of elastic members disposed on the base 19, for example, a spring 22. In addition, the Rogawa arm 20
Is attached to the elevating slider 5, and the elevating mechanism (not shown) allows the boat 8 to be raised and lowered. [0007] An O-ring 23 is provided on the seal cap 6 and is brought into contact with a flange portion 24 provided horizontally below the inlet adapter 4, thereby keeping the inlet adapter 4 and the seal cap 6 airtight. Due to the lifting action of the lifting mechanism, even after the O-ring 23 comes into contact with the flange part 24, in order to obtain an effective contact pressure between the O-ring 23 and the flange part 24, the lifting mechanism is slightly moved. And the elastic force of the spring 22 keeps the inlet adapter 4 and the seal cap 6 airtight. An airtight reaction chamber is formed by the seal cap 6, the inlet adapter 4, and the outer reaction tube 16, and the substrate is processed. In the above-mentioned conventional vertical furnace, when the opening of the reaction chamber is sealed by the seal cap 6, the weight of the boat 8 and the wafer 9 and the like are reduced.
Due to the reaction force of the spring 22, the base 19
As shown by an arrow A, a portion farther from the lift slider 5 is lowered, and the base 19 is no longer in a horizontal state. Therefore, the inclination in the direction of the arrow B propagates to the boat 8 as well, and the boat 8 is not inserted parallel to the inner reaction tube 3 and the outer reaction tube 16, and the inside of the substrate and the space between the substrates are not inserted. Temperature uniformity could not be maintained, and there was a risk of contact with the inner reaction tube 3 or dropping of the wafer 9. If the inner reaction tube 3 is not held vertically due to a mounting error or the like, the inner reaction tube 3
And the boat 8 may come into contact with each other. In view of such circumstances, the present invention provides a substrate processing apparatus in which the boat 8 is inserted in parallel with the inner reaction tube 3 and the outer reaction tube 16 while maintaining the airtightness of the reaction chamber. Is what you do. According to the present invention, there is provided a reaction chamber for accommodating and processing a substrate, a substrate holder for holding the substrate in multiple stages in a horizontal posture, and a reaction chamber opening is hermetically closed. In a substrate processing apparatus comprising: a lid to be inserted; and a moving mechanism for inserting and pulling the substrate holder into and out of the reaction chamber, the substrate holder is supported by the lid, and the moving mechanism and the lid are A substrate processing apparatus characterized by being connected via a plurality of elastic members. That is, the boat is fixed on the cap receiver, and the cap receiver is held parallel to the seal cap by a connecting rod provided perpendicular to the seal cap. Further, the base is fixed on the Rogawa arm, and the seal cap is held by a plurality of elastic members, for example, springs arranged on the base. Thus, by using a spring, the seal cap comes into contact with the flange portion of the inlet adapter to maintain airtightness, and at the same time, the boat can be held parallel to the inner reaction tube and the outer reaction tube. An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. It should be noted that FIG. 1, FIG. 2, or FIG.
The same reference numerals are given to those equivalent to those shown in FIG. The outline of a semiconductor manufacturing apparatus provided with a vertical furnace will be described with reference to FIG. In this semiconductor manufacturing apparatus, a reaction furnace 2 is installed above the inside of a housing 1, and an inside reaction tube 3 (not shown in FIG. 1) and an outside reaction tube 16 are provided inside the reaction furnace 2.
(Not visible in this figure). The outer reaction tube 16
Has a cylindrical shape whose upper part is closed, and a cylindrical inlet adapter 4 is attached to its lower part. An elevating mechanism (not shown in this figure) is provided below the outer reaction tube 16, and an elevating slider 5 (not shown in the figure) of the elevating mechanism is provided with an opening at the lower part of the inlet adapter 4. A seal cap 6 that is closed and forms an airtight reaction chamber is provided. A boat 8 made of quartz or SiC is installed on a cap receiver 7 (not shown in the figure) disposed above the seal cap 6. Substrates to be processed, for example, wafers 9 (not shown in this drawing) are mounted on the boat 8 in multiple stages in a horizontal posture. A wafer transfer device 10 is provided beside the lifting mechanism.
And a cassette stocker 11 is provided further to the side of the wafer transfer machine 10. The cassette stocker 11 is capable of storing a required number of wafer cassettes 12, and the loading and unloading of wafers 9 into and from the semiconductor manufacturing apparatus is performed while the wafers 9 are loaded in the wafer cassette 12. When the processing of the wafer 9 is performed, the lifting mechanism is driven upward to insert the boat 8 on which the wafer 9 is mounted into the inner reaction tube 3. At that time, the seal cap 6 which rises at the same time finally closes the opening of the reaction chamber, thereby keeping the reaction chamber airtight.
A desired process is performed on the wafer 9 by heating the wafer 9 to a desired temperature by the heater 15 and introducing a reaction gas into the reaction chamber from the gas supply port 25. When the predetermined process is completed, the gas after the process is discharged from the exhaust port 17, and the boat 8 is lowered using the lifting mechanism,
The processed wafer 9 is unloaded. Next, an embodiment of a sealing structure for an opening of a reaction chamber according to the present invention will be described with reference to FIG. The boat 8 is fixed on the cap receiver 7, and the cap receiver 7 is held parallel to the seal cap 6 by a connecting rod 27 provided perpendicular to the seal cap 6. Further, the base 19 is fixed on the Rogawa arm 20, and the seal cap 6 is held by a plurality of elastic members, for example, springs 22 arranged on the base 19. The spring 22 has sufficient strength to support the seal cap 6 with the elastic force kept from the base 19 even when the wafers 9 are all loaded on the boat 8. When the boat is not closed, the flange-shaped ring receiver 28 provided at the lower part of the seal cap 6 and the base 19 are in contact with each other to prevent the boat from becoming unstable. The base 19 is fixed to one end of the Loga arm 20, and the other end is fixed to the lifting slider 5, so that the boat 8 can be raised and lowered. The boat 8 holds wafers 9 in multiple stages,
The boat 8 is raised by the elevating mechanism and loaded into the inner reaction tube 3. An O-ring 23 is provided on the seal cap 6, and the O-ring 23 is in contact with a flange 24 provided horizontally below the inlet adapter 4 to seal the reaction chamber. Due to the lifting action of the lifting mechanism, the O-ring 2
3, even after contact with the flange portion 24, in order to obtain an effective contact pressure between the O-ring 23 and the flange portion 24, the lifting mechanism is slightly raised, and the elastic force of the spring 22 The lower part of the reaction chamber is sealed, and a desired treatment is performed. At this time, as in the conventional case, the portion of the base 19 farther than the lifting slider 5 is moved by the weight of the boat 8 and the wafer 9 and the reaction force of the spring 22.
As shown by arrow A, the base 19 cannot be maintained horizontal. However, since the seal cap 6 is in close contact with the flange 24, airtightness in the reaction chamber is maintained, and at the same time, the flange 19 is closed. And the same plane. Therefore, the boat 8 is inserted perpendicular to the flange, that is, parallel to the inner reaction tube 3 and the outer reaction tube 16. As described above, according to the present invention, the boat is fixed on the cap receiver, and the cap receiver is parallel to the seal cap with the connecting rod provided perpendicular to the seal cap. Holding, the base is fixed on the Loga arm, and the seal cap is held by a plurality of elastic members arranged on the base, for example, a spring. Due to the elastic force of the spring, the seal cap can be in close contact with the flange portion of the inlet adapter, and the airtightness of the reaction chamber can be maintained. At the same time, the boat can be inserted perpendicular to the flange portion, that is, the boat can be inserted parallel to the reaction tube, The temperature uniformity inside and between the substrates can be achieved, and it is possible to prevent the contact with the reaction tube or the falling off of the wafer. Further, even when the inner reaction tube is not held vertically due to a mounting error or the like, contact between the inner reaction tube and the boat is prevented.

【図面の簡単な説明】 【図1】本発明の実施の形態を示す反応室開口部の断面
図である。 【図2】本発明で問題とする縦型炉を備えた半導体製造
装置の概略斜視図である。 【図3】従来例を示す反応室開口部の断面図である。 【符号の説明】 2 反応炉 4 インレットアダプタ 6 シールキャップ 7 キャップ受け 8 ボート 18 サポートフランジ 19 ベース 20 ロガワアーム 21 ベローズ 22 スプリング 27 連結棒 28 リング受け
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view of a reaction chamber opening showing an embodiment of the present invention. FIG. 2 is a schematic perspective view of a semiconductor manufacturing apparatus provided with a vertical furnace which is a problem in the present invention. FIG. 3 is a sectional view of a reaction chamber opening showing a conventional example. [Description of Signs] 2 Reactor 4 Inlet adapter 6 Seal cap 7 Cap receiver 8 Boat 18 Support flange 19 Base 20 Rogawa arm 21 Bellows 22 Spring 27 Connecting rod 28 Ring receiver

───────────────────────────────────────────────────── フロントページの続き (72)発明者 高島 義和 東京都中野区東中野三丁目14番20号 株式 会社日立国際電気内 Fターム(参考) 4K030 CA12 EA03 GA02 GA13 KA10 KA11 5F045 BB01 DP19 EB10    ────────────────────────────────────────────────── ─── Continuation of front page    (72) Inventor Yoshikazu Takashima             3-14-20 Higashinakano, Nakano-ku, Tokyo Stock             Hitachi Kokusai Electric Inc. F term (reference) 4K030 CA12 EA03 GA02 GA13 KA10                       KA11                 5F045 BB01 DP19 EB10

Claims (1)

【特許請求の範囲】 【請求項1】基板を収容して処理する反応室と、前記基
板を水平姿勢で多段に保持する基板保持具と、反応室開
口部を気密に閉塞する蓋体と、前記基板保持具を反応室
に挿入、引き出しする移動機構と、と備えた基板処理装
置において、前記基板保持具は前記蓋体に支持され、前
記移動機構と前記蓋体とは複数の弾性部材を介して連結
したことを特徴とする基板処理装置。
Claims: 1. A reaction chamber for accommodating and processing a substrate, a substrate holder for holding the substrate in multiple stages in a horizontal posture, a lid for hermetically closing an opening of the reaction chamber, In a substrate processing apparatus comprising: a moving mechanism for inserting and pulling the substrate holder into and out of the reaction chamber; and the substrate holder is supported by the lid, and the moving mechanism and the lid include a plurality of elastic members. A substrate processing apparatus, wherein the substrate processing apparatus is connected via a link.
JP2002116265A 2002-04-18 2002-04-18 Substrate processing equipment Expired - Lifetime JP4342765B2 (en)

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JP4342765B2 JP4342765B2 (en) 2009-10-14

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176262A (en) * 2010-01-27 2011-09-08 Hitachi Kokusai Electric Inc Substrate treating apparatus
US20130025539A1 (en) * 2007-05-21 2013-01-31 Centrotherm Photovoltaics Ag Device for doping, deposition or oxidation of semiconductor material at low pressure
US9803926B2 (en) 2014-01-28 2017-10-31 Tokyo Electron Limited Support mechanism and substrate processing apparatus
CN109837527A (en) * 2017-11-24 2019-06-04 北京北方华创微电子装备有限公司 A kind of admission gear
KR20210098518A (en) 2019-02-20 2021-08-10 가부시키가이샤 코쿠사이 엘렉트릭 Substrate processing apparatus, furnace closure unit, and manufacturing method of a semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130025539A1 (en) * 2007-05-21 2013-01-31 Centrotherm Photovoltaics Ag Device for doping, deposition or oxidation of semiconductor material at low pressure
US8460468B2 (en) * 2007-05-21 2013-06-11 Centrotherm Photovoltaics Ag Device for doping, deposition or oxidation of semiconductor material at low pressure
JP2011176262A (en) * 2010-01-27 2011-09-08 Hitachi Kokusai Electric Inc Substrate treating apparatus
US9803926B2 (en) 2014-01-28 2017-10-31 Tokyo Electron Limited Support mechanism and substrate processing apparatus
CN109837527A (en) * 2017-11-24 2019-06-04 北京北方华创微电子装备有限公司 A kind of admission gear
KR20210098518A (en) 2019-02-20 2021-08-10 가부시키가이샤 코쿠사이 엘렉트릭 Substrate processing apparatus, furnace closure unit, and manufacturing method of a semiconductor device

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