JP2003306775A - Patterning method for plating - Google Patents

Patterning method for plating

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Publication number
JP2003306775A
JP2003306775A JP2002112951A JP2002112951A JP2003306775A JP 2003306775 A JP2003306775 A JP 2003306775A JP 2002112951 A JP2002112951 A JP 2002112951A JP 2002112951 A JP2002112951 A JP 2002112951A JP 2003306775 A JP2003306775 A JP 2003306775A
Authority
JP
Japan
Prior art keywords
plating
patterning method
treatment
pattern mask
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2002112951A
Other languages
Japanese (ja)
Inventor
Takahiro Ishizawa
孝博 石澤
Yuki Yamagata
由紀 山形
Isamu Tei
偉 鄭
Yoshihiko Watanabe
嘉彦 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yazaki Corp
Original Assignee
Yazaki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yazaki Corp filed Critical Yazaki Corp
Priority to JP2002112951A priority Critical patent/JP2003306775A/en
Publication of JP2003306775A publication Critical patent/JP2003306775A/en
Abandoned legal-status Critical Current

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  • Manufacturing Of Printed Wiring (AREA)
  • Chemically Coating (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a patterning method for plating in which no resist is used and no influence is produced upon a pattern mask and which is capable of repeated use and requires relatively low equipment cost and can cope with the recent demand for finer pattern. <P>SOLUTION: In the patterning method for plating, the surface of a substrate is etched, irradiated with plasma using a pattern mask together, and then subjected to catalyst treatment and electroless plating. <P>COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】 【0001】 【発明の属する技術分野】本発明は、非導電性基材表面
に電気回路形成あるいは各種意匠賦与のためにパターン
を有する金属層を形成するめっきのパターニング方法に
関する。 【0002】 【従来の技術】非導電性基板などの表面に化学めっきを
利用して電気回路などのパターンを有するめっきを形成
する方法としては下記の4つの方法が知られていた。し
かしながらそれぞれの方法は一長一短でそれぞれ欠点を
有していた。具体的に示すと次のようになる。 【0003】レジストを利用するフォトエッチング:
フォトレジスト及び残留金属の除去工程が必要である。 パターンマスクを利用した金属蒸着:設備コストが大
きく、作業が複雑で長時間かかる、またパターンマスク
へ金属が堆積するためその除去あるいは定期的な交換が
必要になる。 【0004】パターンマスクを利用する溶射:基板の
ダメージが大きく、設備コストも大きく、微細なパター
ン形成に対応できず、かつ、パターンマスクへ金属が堆
積するためその除去あるいは定期的な交換が必要にな
る。 【0005】紫外線によるめっきのパターン化(特開
平6−77626号):紫外線はプラスチック基板表面
の不活性化力に対し発熱力が高いため、紫外線ランプか
らプラスチック基板への距離と不活性化力との調整が困
難であり、充分なめっきのパターン化が行えず、めっき
回路形成方法としては実用的でない。 【0006】このように、レジストを用いることなし
に、また、パターンマスクへの影響がなく、繰り返し使
用が可能で設備コストが比較的小さく、微細なパターン
に対応できるめっきのパターニング方法が求められてい
た。 【0007】 【発明が解決しようとする課題】本発明は、上記した従
来の問題点を改善する、すなわち、レジストを用いるこ
となしに、また、パターンマスクへの影響がなく、繰り
返し使用が可能で設備コストが比較的小さく、微細なパ
ターンに対応できるめっきのパターニング方法を提供す
ることを目的とする。 【0008】 【課題を解決するための手段】本発明のめっきのパター
ニング方法は上記課題を解決するため、請求項1に記載
の通り、基材表面をエッチングした後、パターンマスク
を併用して該基材表面にプラズマを照射し、次いで、キ
ャタリスト処理を行った後、無電解めっきを行うめっき
のパターニング方法であり、このような構成により、レ
ジストを用いることなしに、また、パターンマスクへの
影響がなく、繰り返し使用が可能で設備コストが比較的
小さく、微細なパターンに対応できる。 【0009】 【発明の実施の形態】本発明のめっきのパターニング方
法において、基材としては、アクリロニトリル−ブタジ
エン−スチレン共重合体を有するABS系樹脂、ポリエ
ステル、ポリカーボネート、ポリアセタール等、触媒を
必要とする無電解めっき法が存在する材料からなるもの
であれば用いることが出来る。 【0010】基材のめっきを施す部分には、必要に応じ
て、有機溶媒、中性洗剤等によって、脱脂処理を施し、
表面の指紋、油脂、ごみ等を除去する。次いでエッチン
グ処理を行う(図1(a)にイメージ図を示す)。 【0011】エッチングは基材のめっきを施す部分の一
面に対して行う必要がある。このエッチングにより基材
表面を化学的に粗化してめっき層との間にアンカー効果
が得られるようにする。また、同時にこのエッチングに
より、基材表面にカルボキシル基(−COOH)、スル
ホン基(−SO3H)が導入される。このようなエッチ
ングは、例えば無水クロム酸と硫酸とを併用することに
より達成される。 【0012】エッチングの際に用いた薬液はその後、充
分に洗浄・除去する必要がある。無水クロム酸を用いた
場合には必要に応じて還元を行い、その後希塩酸、水等
で充分洗浄する。 【0013】その後、基材表面にパターンマスクを併用
してプラズマを照射する(図1(b)にイメージ図を示
す)。このプラズマ処理により、プラズマが照射された
部分は後述するキャタリスト処理による触媒の吸着量が
少なくなり、結果として、無電解めっきによるめっき層
が形成されない。このため、パターンマスクとしては、
形成したいめっきパターンに対して反転した「ネガパタ
ーン」を有するものを用いる。 【0014】パターンマスクはプラズマが照射されるだ
けであるため、耐久性の素材、例えばステンレス、ポリ
イミド系などのプラスチック製フィルムなどを用いれ
ば、半永久的に反復使用することができる。 【0015】プラズマ照射条件としては、照射される部
分に最終的にめっき層が形成されなければよく、長時間
の処理、あるいは、厳しい条件であると基材が熱変形す
るおそれがあるため、可能な限り穏和な条件で行われ
る。 【0016】ラジカルの状態で基板にプラズマ処理を施
すことの出来る方法であると、カルボキシル基、スルホ
ン基などの触媒付与を補助する官能基の不活性化を効果
的に達成することができる。ここで、窒素ガスを用いた
場合よりも酸素ガスを用いたプラズマ処理の方が高い効
果が得られるので好ましい。 【0017】プラズマ照射処理後、キャタリスト処理を
行う(図1(c)にイメージ図を示す)。これはエッチ
ングされた基材表面のうち、プラズマ照射されなかった
部分に、触媒であるパラジウム−すず複合錯化合物を吸
着させる工程である。 【0018】キャタリスト処理の後、基板がアクリロニ
トリル−ブタジエン−スチレン共重合体系樹脂からなる
場合には塩酸ないし希塩酸によるアクセレーター処理を
行って、過剰なスズを除去すると共にパラジウムを活性
化する。 【0019】次いで、無電解めっきを行う(図1(d)
にイメージ図を示す)。無電解めっき浴は様々なものが
市販されており、本発明では触媒付与を行うものであれ
ばすべて応用可能で、銅、ニッケル、銀、金、コバルト
などのめっき浴を用いることができる。 【0020】めっき後、必要に応じて洗浄を行う。な
お、無電解めっきによって形成されためっき部分を電極
として、さらに同じ金属、あるいは、異なる金属を電気
めっきしても良い。 【0021】 【実施例】以下に本発明のめっきのパターニング方法に
ついて具体的に説明する。 <基板表面の脱脂処理>基材としてアクリロニトリル−
ブタジエン−スチレン共重合体からなる10cm×5c
m、厚さ3mmの平板(以下「基板」)を用いた。この
基板を奥野製薬工業社製洗浄剤エースクリーンA−22
0の50g/L水溶液(約50℃)に4分間浸漬、液内
で振動させて洗浄し、その後、水洗した。 【0022】<エッチング処理>エッチング液としては
無水クロム酸400gと濃硫酸400gとを水を加えて
1Lとした水溶液を用いた。 【0023】上記基板を68℃に保ったこのエッチング
液に10分間浸漬して、そのめっき層形成面にエッチン
グ処理を施し、次いで5重量%−亜硫酸水素ナトリウム
水溶液で洗浄して残留した六価クロムを三価に還元し、
その後、希塩酸で洗浄し、表面のクロムを除去した。得
られた基板についてXPS(X線光電子分光法)により
解析を行ったところ、その表面にカルボキシル基及びス
ルホン基が導入されていることが確認された。 【0024】<プラズマ処理>上記基板表面に、所望の
回路形状を有するステンレス(SUS−304)製パタ
ーンマスク(ただし、ネガパターン)を密着させてプラ
ズマ処理を行った。 【0025】電極間処理を40mm、試料位置を下部電
極として、RF電源として150W、ガス種としては酸
素ガス、圧力は27Paで、10分間照射した。表面の
XPS解析を行ったところマスクされた部分のカルボキ
シル基、スルホン基には変化がなかったが、プラズマ処
理された部分ではカルボキシル基、スルホン基共に減少
していることが確認された。 【0026】<キャタリスト処理>上記でプラズマ処理
を行った基板をパラジウム−スズ錯化合物(奥野製薬工
業社製キャタリストC40mL)を濃塩酸150mLと
ともに水に加えて1Lとして得たキャタリスト溶液(室
温)に約3分間浸漬し、引き上げた後、40℃の希硫酸
に5分浸漬してアクセレーター処理を行った(なお、希
塩酸を用いる場合には35℃とすることが望ましい)。 【0027】<無電解めっき処理>予めアンモニア水溶
液でpHを8.5〜9.5の範囲に調整した奥野製薬工
業社製TMP化学ニッケルめっき浴(30℃)を用い
て、7分間のめっき処理を行った。得られためっき部分
について詳細に観察した結果、所望の形状(プラズマ処
理で用いたパターンマスクのネガ像)に形成され、めっ
き厚さは約0.3μmであることが確認された。 【0028】 【発明の効果】本発明のめっきのパターニング方法は、
優れためっきのパターニング方法である。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating patterning method for forming a metal layer having a pattern on the surface of a non-conductive substrate for forming an electric circuit or applying various designs. About. 2. Description of the Related Art The following four methods have been known as methods for forming plating having a pattern such as an electric circuit on a surface of a non-conductive substrate or the like by utilizing chemical plating. However, each method had advantages and disadvantages, and had disadvantages. Specifically, it is as follows. [0003] Photoetching using a resist:
A photoresist and residual metal removal step is required. Metal deposition using a pattern mask: The equipment cost is large, the operation is complicated and it takes a long time, and since the metal is deposited on the pattern mask, its removal or periodic replacement is required. [0004] Thermal spraying using a pattern mask: The damage to the substrate is large, the equipment cost is large, it is not possible to cope with the formation of a fine pattern, and since metal is deposited on the pattern mask, its removal or periodic replacement is necessary. Become. [0005] Patterning of plating by ultraviolet rays (Japanese Patent Application Laid-Open No. Hei 6-77626): Since ultraviolet rays have a high heating power with respect to the deactivating power of the plastic substrate surface, the distance from the ultraviolet lamp to the plastic substrate and the deactivating power are high. Is difficult to adjust, and sufficient plating patterning cannot be performed, which is not practical as a plating circuit forming method. As described above, there is a need for a plating patterning method which can be used repeatedly without using a resist, has no influence on a pattern mask, has relatively small equipment cost, and can cope with a fine pattern. Was. The present invention solves the above-mentioned conventional problems, that is, it can be used repeatedly without using a resist and without affecting a pattern mask. It is an object of the present invention to provide a plating patterning method that has a relatively small facility cost and can handle a fine pattern. [0008] In order to solve the above-mentioned problems, the plating patterning method of the present invention, as described in claim 1, etches the surface of a base material and then uses a pattern mask together with the etching. Irradiating the substrate surface with plasma, and then performing a catalyst process, is a plating patterning method of performing electroless plating.With such a configuration, without using a resist, it is also possible to use a pattern mask. It has no effect, can be used repeatedly, has relatively low equipment cost, and can handle fine patterns. DETAILED DESCRIPTION OF THE INVENTION In the plating patterning method of the present invention, a base material requires a catalyst such as an ABS resin having an acrylonitrile-butadiene-styrene copolymer, polyester, polycarbonate, polyacetal and the like. Any material can be used as long as it is made of a material in which the electroless plating method exists. The portion of the substrate to be plated is subjected to a degreasing treatment with an organic solvent, a neutral detergent or the like, if necessary.
Removes fingerprints, oils, dirt, etc. on the surface. Next, an etching process is performed (an image diagram is shown in FIG. 1A). The etching needs to be performed on one surface of the portion of the base material to be plated. This etching chemically roughens the base material surface so that an anchor effect can be obtained between the base material surface and the plating layer. At the same time, a carboxyl group (—COOH) and a sulfone group (—SO 3 H) are introduced into the substrate surface by this etching. Such etching is achieved by using, for example, chromic anhydride and sulfuric acid in combination. After that, the chemical used at the time of etching must be sufficiently washed and removed. When chromic anhydride is used, reduction is performed if necessary, and then sufficient washing is performed with dilute hydrochloric acid, water, or the like. Thereafter, the substrate surface is irradiated with plasma by using a pattern mask together (FIG. 1B shows an image diagram). Due to this plasma treatment, the portion irradiated with the plasma has a reduced amount of catalyst adsorbed by the later-described catalyst treatment, and as a result, a plating layer is not formed by electroless plating. Therefore, as a pattern mask,
A plate having a "negative pattern" which is inverted with respect to a plating pattern to be formed is used. Since the pattern mask is merely irradiated with plasma, if a durable material, for example, a plastic film such as stainless steel or polyimide is used, the pattern mask can be used semipermanently repeatedly. [0015] The plasma irradiation condition is not required as long as the plating layer is not finally formed on the irradiated portion, and the substrate may be thermally deformed under a long-time treatment or under severe conditions. It is performed under as mild a condition as possible. According to a method capable of subjecting a substrate to a plasma treatment in a radical state, inactivation of a functional group such as a carboxyl group or a sulfone group which assists in providing a catalyst can be effectively achieved. Here, plasma treatment using oxygen gas is more preferable than using nitrogen gas because a higher effect can be obtained. After the plasma irradiation process, a catalyst process is performed (an image diagram is shown in FIG. 1C). This is a step of adsorbing a palladium-tin complex complex compound as a catalyst on a portion of the etched substrate surface that has not been irradiated with plasma. After the catalyst treatment, when the substrate is made of an acrylonitrile-butadiene-styrene copolymer resin, an accelerator treatment with hydrochloric acid or dilute hydrochloric acid is performed to remove excess tin and activate palladium. Next, electroless plating is performed (FIG. 1D).
Is shown in the image). Various electroless plating baths are commercially available. In the present invention, any plating bath capable of imparting a catalyst can be applied, and a plating bath of copper, nickel, silver, gold, cobalt, or the like can be used. After plating, washing is performed if necessary. The plated portion formed by the electroless plating may be used as an electrode, and the same metal or a different metal may be further electroplated. The following is a specific description of the plating patterning method of the present invention. <Degreasing treatment of substrate surface> Acrylonitrile as base material
10cm × 5c made of butadiene-styrene copolymer
A flat plate (hereinafter, “substrate”) having a thickness of 3 mm and a thickness of 3 mm was used. This substrate was washed with Okuno Pharmaceutical Co., Ltd. detergent A-screen A-22.
The sample was immersed in a 50 g / L aqueous solution (about 50 ° C.) for 4 minutes, washed by vibrating in the solution, and then washed with water. <Etching treatment> As an etching solution, an aqueous solution was prepared by adding water to 400 g of chromic anhydride and 400 g of concentrated sulfuric acid to make 1 L. The substrate is immersed in this etching solution maintained at 68 ° C. for 10 minutes to perform an etching treatment on the surface on which the plating layer is formed, and then washed with a 5% by weight aqueous solution of sodium hydrogen sulfite to remove the remaining hexavalent chromium. To trivalent,
Thereafter, the surface was washed with dilute hydrochloric acid to remove chromium on the surface. When the obtained substrate was analyzed by XPS (X-ray photoelectron spectroscopy), it was confirmed that a carboxyl group and a sulfone group were introduced on the surface. <Plasma Treatment> A stainless steel (SUS-304) pattern mask (a negative pattern) having a desired circuit shape was brought into close contact with the substrate surface to perform a plasma treatment. Irradiation was performed for 10 minutes at an interelectrode treatment of 40 mm, a sample position as a lower electrode, an RF power source of 150 W, an oxygen gas as a gas type, and a pressure of 27 Pa. XPS analysis of the surface confirmed that there was no change in the carboxyl group and the sulfone group in the masked portion, but it was confirmed that both the carboxyl group and the sulfone group were reduced in the plasma-treated portion. <Catalyst treatment> A palladium-tin complex compound (Catalyst C 40 mL, Okuno Pharmaceutical Co., Ltd.) was added to water together with 150 mL of concentrated hydrochloric acid to water to obtain a 1 L catalyst solution (room temperature). ) For about 3 minutes, lifted, and then immersed in dilute sulfuric acid at 40 ° C. for 5 minutes to perform accelerator treatment (when dilute hydrochloric acid is used, the temperature is preferably 35 ° C.). <Electroless Plating Treatment> A plating treatment for 7 minutes using a TMP chemical nickel plating bath (30 ° C.) manufactured by Okuno Pharmaceutical Co., Ltd., which was previously adjusted to pH 8.5 to 9.5 with an aqueous ammonia solution. Was done. As a result of observing the obtained plated portion in detail, it was confirmed that the plated portion was formed into a desired shape (a negative image of the pattern mask used in the plasma treatment) and the plating thickness was about 0.3 μm. The plating patterning method of the present invention comprises:
This is an excellent plating patterning method.

【図面の簡単な説明】 【図1】本発明のめっきのパターニング方法の各工程を
示すイメージ図である。 (a)エッチング処理 (b)パターンマスクを併用する基材表面へのプラズマ
照射処理 (c)キャタリスト処理 (d)無電解めっき処理
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an image view showing each step of a plating patterning method of the present invention. (A) Etching treatment (b) Plasma irradiation treatment on substrate surface using pattern mask together (c) Catalyst treatment (d) Electroless plating treatment

───────────────────────────────────────────────────── フロントページの続き (72)発明者 鄭 偉 静岡県裾野市御宿1500 矢崎総業株式会社 内 (72)発明者 渡辺 嘉彦 静岡県裾野市御宿1500 矢崎総業株式会社 内 Fターム(参考) 4K022 AA11 AA23 AA41 AA42 BA01 BA03 BA06 BA08 BA14 BA35 CA07 CA29 DA01 5E343 AA02 AA37 BB44 BB71 CC38 CC43 CC50 CC52 CC54 CC73 DD33 EE36 ER02 GG08 GG11   ────────────────────────────────────────────────── ─── Continuation of front page    (72) Inventor Zheng Wei             1500 Yajuku Sogyo Co., Ltd., Susono City, Shizuoka Prefecture             Inside (72) Inventor Yoshihiko Watanabe             1500 Yajuku Sogyo Co., Ltd., Susono City, Shizuoka Prefecture             Inside F term (reference) 4K022 AA11 AA23 AA41 AA42 BA01                       BA03 BA06 BA08 BA14 BA35                       CA07 CA29 DA01                 5E343 AA02 AA37 BB44 BB71 CC38                       CC43 CC50 CC52 CC54 CC73                       DD33 EE36 ER02 GG08 GG11

Claims (1)

【特許請求の範囲】 【請求項1】 基材表面をエッチングした後、パターン
マスクを併用して該基材表面にプラズマ照射し、次い
で、キャタリスト処理を行った後、無電解めっきを行う
ことを特徴とするめっきのパターニング方法。
Claims: 1. After etching a substrate surface, irradiating the substrate surface with plasma using a pattern mask, performing a catalyst process, and then performing electroless plating. A patterning method for plating.
JP2002112951A 2002-04-16 2002-04-16 Patterning method for plating Abandoned JP2003306775A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002112951A JP2003306775A (en) 2002-04-16 2002-04-16 Patterning method for plating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002112951A JP2003306775A (en) 2002-04-16 2002-04-16 Patterning method for plating

Publications (1)

Publication Number Publication Date
JP2003306775A true JP2003306775A (en) 2003-10-31

Family

ID=29395270

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002112951A Abandoned JP2003306775A (en) 2002-04-16 2002-04-16 Patterning method for plating

Country Status (1)

Country Link
JP (1) JP2003306775A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235629A (en) * 2007-03-22 2008-10-02 Fujitsu Ltd Circuit board and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235629A (en) * 2007-03-22 2008-10-02 Fujitsu Ltd Circuit board and its manufacturing method

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