JP2003299966A - Method for producing highly active photocatalytic titanimu oxide - Google Patents
Method for producing highly active photocatalytic titanimu oxideInfo
- Publication number
- JP2003299966A JP2003299966A JP2002107886A JP2002107886A JP2003299966A JP 2003299966 A JP2003299966 A JP 2003299966A JP 2002107886 A JP2002107886 A JP 2002107886A JP 2002107886 A JP2002107886 A JP 2002107886A JP 2003299966 A JP2003299966 A JP 2003299966A
- Authority
- JP
- Japan
- Prior art keywords
- tio
- substrate
- photocatalytic
- film
- titanium dioxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001699 photocatalysis Effects 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000000151 deposition Methods 0.000 claims abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 33
- 239000010936 titanium Substances 0.000 abstract description 21
- 239000004408 titanium dioxide Substances 0.000 abstract description 13
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract description 11
- 239000011941 photocatalyst Substances 0.000 abstract description 8
- 229910052723 transition metal Inorganic materials 0.000 abstract description 5
- 150000003624 transition metals Chemical class 0.000 abstract description 5
- 238000001704 evaporation Methods 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 2
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 13
- 238000007740 vapor deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 6
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 5
- 229960000907 methylthioninium chloride Drugs 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- -1 copper Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000013032 photocatalytic reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光触媒として有用
な二酸化チタン（ＴｉＯ2）の製造方法に関する。本発
明は、具体的には、遷移金属等を用いることなく、酸化
チタンのみを用いることにより光触媒効率を向上させる
ことができる二酸化チタン光触媒の製造方法に関する。
本発明は、更に、高効率でしかもリサイクルが可能な光
触媒薄膜の製造に関する。TECHNICAL FIELD The present invention relates to a method for producing titanium dioxide (TiO 2 ) useful as a photocatalyst. The present invention specifically relates to a method for producing a titanium dioxide photocatalyst that can improve the photocatalytic efficiency by using only titanium oxide without using a transition metal or the like.
The invention further relates to the production of highly efficient and recyclable photocatalytic thin films.
【０００２】[0002]
【従来の技術】二酸化チタンは有用な光触媒材料であ
る。これまでの光触媒二酸化チタンに関する技術におい
ては、光触媒の高効率化のため二酸化チタンに銅、クロ
ムなどの遷移金属を添加したり、プラチナなどの貴金属
を担持させたりすることによって光触媒活性を高めるこ
とが行われてきた。Titanium dioxide is a useful photocatalytic material. In the conventional photocatalyst titanium dioxide technology, the photocatalytic activity can be increased by adding a transition metal such as copper or chromium to titanium dioxide or supporting a noble metal such as platinum in order to improve the efficiency of the photocatalyst. Has been done.
【０００３】[0003]
【発明が解決しようとする課題】本発明においては、光
触媒の高効率化のために従来行われてきた遷移金属等の
添加を行うことなく、二酸化チタン光触媒の効率を向上
させることを課題とする。SUMMARY OF THE INVENTION It is an object of the present invention to improve the efficiency of a titanium dioxide photocatalyst without adding a transition metal or the like which has been conventionally carried out for increasing the efficiency of the photocatalyst. .
【０００４】[0004]
【課題を解決するための手段】本発明者らは、上記課題
を解決するため鋭意研究をした結果、組成比の異なる酸
化チタンを積層させることにより二酸化チタンの光触媒
活性を向上させることができることを発見し、本発明を
完成させた。Means for Solving the Problems As a result of intensive studies for solving the above problems, the present inventors have found that the photocatalytic activity of titanium dioxide can be improved by stacking titanium oxides having different composition ratios. Discovered and completed the present invention.
【０００５】即ち、本発明は、基板上にＴｉＯ2を１０
０〜２００ｎｍの厚さで成膜した後ＴｉＯ2膜の上にＴ
ｉ2Ｏ3を部分的に蒸着する、光触媒二酸化チタンの製造
方法であって、ＴｉＯ2の光触媒活性が増大されること
を特徴とする方法を課題解決手段とするものである。That is, according to the present invention, 10 TiO 2 is deposited on the substrate.
After forming a film with a thickness of 0 to 200 nm, T is formed on the TiO 2 film.
A method for producing a photocatalytic titanium dioxide in which i 2 O 3 is partially vapor-deposited, characterized in that the photocatalytic activity of TiO 2 is increased, is a means for solving the problems.
【０００６】本発明は、更に、基板温度４００〜６００
℃において、レーザ蒸着法により酸素を含む雰囲気下で
ＴｉＯ2を成膜し真空下でＴｉ2Ｏ3を蒸着する上記方法
を課題解決手段とする。The present invention further provides a substrate temperature of 400-600.
The above method for forming a film of TiO 2 in an atmosphere containing oxygen at a temperature of ℃ and vapor depositing Ti 2 O 3 under vacuum is used as a means for solving the problems.
【０００７】[0007]
【発明の実施の形態】本発明は、組成比の異なる酸化チ
タンを積層させることにより、光触媒活性を向上させる
ことができる、高活性光触媒二酸化チタンの製造方法で
ある。BEST MODE FOR CARRYING OUT THE INVENTION The present invention is a method for producing a highly active photocatalytic titanium dioxide in which the photocatalytic activity can be improved by laminating titanium oxides having different composition ratios.
【０００８】本発明の一態様においては、まず、酸素を
含む雰囲気下で、焼結体である酸化チタン円板をレーザ
照射することによって、ＴｉＯ2膜を基板上に蒸着させ
る（レーザ蒸着法）。酸素を含む雰囲気は、レーザ照射
により蒸発したチタンが雰囲気中の酸素と反応してＴｉ
Ｏ2を形成できるものであればよく、例えば、１０-3Ｔ
ｏｒｒ程度の酸素ガス雰囲気である。本発明に用いるこ
とができる基板は、シリコン単結晶基板、サファイア単
結晶基板、又は石英ガラス基板であり、成膜の際の基板
温度は４００〜６００℃である。基板上に成膜する二酸
化チタンの厚さは１００〜２００ｎｍ程度が好ましい。
また、レーザは、照射により酸化チタン焼結体を蒸発さ
せることができるものであればいずれであってもよい。In one aspect of the present invention, first, a titanium oxide disk, which is a sintered body, is irradiated with laser in an atmosphere containing oxygen to deposit a TiO 2 film on a substrate (laser vapor deposition method). . In an atmosphere containing oxygen, titanium vaporized by laser irradiation reacts with oxygen in the atmosphere to generate Ti.
Any material capable of forming O 2 may be used, for example, 10 −3 T
An oxygen gas atmosphere of about orr. A substrate that can be used in the present invention is a silicon single crystal substrate, a sapphire single crystal substrate, or a quartz glass substrate, and the substrate temperature during film formation is 400 to 600 ° C. The thickness of titanium dioxide formed on the substrate is preferably about 100 to 200 nm.
The laser may be any laser as long as it can evaporate the titanium oxide sintered body by irradiation.
【０００９】次に、１０-5Ｔｏｒｒ程度の真空下で、Ｔ
ｉ2Ｏ3を、成膜されたＴｉＯ2の上にレーザ蒸着法によ
り部分的に蒸着させる。このときの基板温度は、ＴｉＯ
2成膜の際と同様、４００〜６００℃である。本発明に
おいて、「部分的に蒸着させる」とは、Ｔｉ2Ｏ3の被覆
率が０ＭＬより大きく１ＭＬ未満であることを意味し、
Ｔｉ2Ｏ3によってＴｉＯ2が完全に覆われないことをい
う。Ｔｉ2Ｏ3の蒸着によりＴｉＯ2膜表面全体が完全に
覆われること、またＴｉ2Ｏ3膜の厚さが厚くなること
は、ＴｉＯ2の光触媒活性が失われることから望ましく
ない。Next, under a vacuum of about 10 -5 Torr, T
i 2 O 3 is partially vapor-deposited on the formed TiO 2 by a laser vapor deposition method. The substrate temperature at this time is TiO 2.
2 As in the case of film formation, the temperature is 400 to 600 ° C. In the present invention, “partially vapor-deposited” means that the coverage of Ti 2 O 3 is more than 0 ML and less than 1 ML,
It means that TiO 2 is not completely covered by Ti 2 O 3 . Completely covering the entire surface of the TiO 2 film by vapor deposition of Ti 2 O 3 and increasing the thickness of the Ti 2 O 3 film are not desirable because the photocatalytic activity of TiO 2 is lost.
【００１０】本発明の二酸化チタン光触媒の製造法にお
いては、用いる基板の種類、及び積層するＴｉ2Ｏ3の厚
さが重要な項目である。以下、本発明を実施例に基づい
て説明する。In the method for producing a titanium dioxide photocatalyst of the present invention, the type of substrate used and the thickness of Ti 2 O 3 to be laminated are important items. Hereinafter, the present invention will be described based on examples.
【００１１】[0011]
【実施例】（実施例１）いずれも鏡面研磨した（１０
０）面のシリコン単結晶基板、（０００１）面のサファ
イア単結晶基板、及び石英ガラス基板上に、二酸化チタ
ン（ＴｉＯ2）膜を基板温度５００℃、約５×１０-3Ｔ
ｏｒｒの酸素雰囲気下でＫｒＦレーザ（波長：２４８ｎ
ｍ、エネルギー：１５０ｍＪ／pulse、周波数：１０Ｈ
ｚ）蒸着法により蒸着した。その後、Ｔｉ2Ｏ3を同じ基
板温度、約１０-5Ｔｏｒｒの真空下でＴｉＯ2膜上に同
様に蒸着して、光触媒二酸化チタン試料を作製した。基
板の大きさはいずれも９×９（ｍｍ）である。Examples (Example 1) All were mirror-polished (10
A titanium dioxide (TiO 2 ) film was formed on a (0) plane silicon single crystal substrate, a (0001) plane sapphire single crystal substrate, and a quartz glass substrate at a substrate temperature of 500 ° C. and about 5 × 10 −3 T.
KrF laser (wavelength: 248n under oxygen atmosphere of orr)
m, energy: 150 mJ / pulse, frequency: 10H
z) It vapor-deposited by the vapor deposition method. Then, Ti 2 O 3 was similarly vapor-deposited on the TiO 2 film under the same substrate temperature and a vacuum of about 10 −5 Torr to prepare a photocatalytic titanium dioxide sample. The size of each substrate is 9 × 9 (mm).
【００１２】Ｔｉ2Ｏ3の蒸着時間即ち蒸着量を変えて作
製した試料の光触媒性能を、光吸収によるメチレンブル
ー溶液の分解により評価した。各々の試料をメチレンブ
ルー溶液（３ｍｌ）に浸しケミカルランプを２時間照射
して、照射後のメチレンブルーの分解量を測定した。メ
チレンブルー分解量は、吸収極大付近の約６６４ｎｍの
波長での光吸収による吸光度の変化を測定した。結果を
図１に示す。図１の縦軸は、メチレンブルー分解量（色
素除去率，％）を示している。分解量の比較から、Ｔｉ
2Ｏ3の蒸着時間が１０〜３０秒である試料はＴｉＯ2の
みの試料（蒸着時間０秒）より光触媒性能が向上してい
ることが分かった。蒸着時間１０〜３０秒でのＴｉ2Ｏ3
蒸着量は０＜Ｔｉ2Ｏ3＜１（ＭＬ）に対応する。このこ
とは、ＴｉＯ2膜上に部分的に蒸着されたＴｉ2Ｏ3と、
基板に蒸着したＴｉＯ2との相互作用により光触媒活性
が増加されることを示している。また、図１に示すよう
に、石英ガラス基板及びシリコン基板はサファイア基板
より光触媒性能が高いことが分かった。The photocatalytic performance of the samples prepared by changing the deposition time of Ti 2 O 3 , that is, the deposition amount was evaluated by decomposing the methylene blue solution by light absorption. Each sample was immersed in a methylene blue solution (3 ml) and irradiated with a chemical lamp for 2 hours to measure the amount of methylene blue decomposed after irradiation. The amount of methylene blue decomposed was determined by measuring the change in absorbance due to light absorption at a wavelength of about 664 nm near the absorption maximum. The results are shown in Fig. 1. The vertical axis of FIG. 1 represents the amount of methylene blue decomposed (dye removal rate,%). From the comparison of the amount of decomposition, Ti
It was found that the sample having a deposition time of 2 O 3 of 10 to 30 seconds has improved photocatalytic performance as compared with the sample of TiO 2 alone (deposition time 0 seconds). Ti 2 O 3 with a deposition time of 10 to 30 seconds
The vapor deposition amount corresponds to 0 <Ti 2 O 3 <1 (ML). This means that Ti 2 O 3 partially deposited on the TiO 2 film,
It is shown that the photocatalytic activity is increased by the interaction with TiO 2 deposited on the substrate. Further, as shown in FIG. 1, it was found that the quartz glass substrate and the silicon substrate have higher photocatalytic performance than the sapphire substrate.
【００１３】（比較例１）実施例１と同様の蒸着条件に
おいて、Ｔｉ2Ｏ3の蒸着時間が６分以上の試料はＴｉＯ
2のみの試料（蒸着時間０秒）よりも光触媒性能が低下
した。更に、蒸着時間７０分の試料では試料表面全体に
Ｔｉ2Ｏ3が蒸着され、光触媒活性は示さなかった。この
ことは、試料表面がＴｉ2Ｏ3で完全に覆われると光触媒
活性が低下することを示している。(Comparative Example 1) Under the same vapor deposition conditions as in Example 1, a sample having a vapor deposition time of Ti 2 O 3 of 6 minutes or more was TiO 2.
The photocatalytic performance was lower than that of the sample of No. 2 only (deposition time 0 second). Further, in the sample having a vapor deposition time of 70 minutes, Ti 2 O 3 was vapor-deposited on the entire surface of the sample and showed no photocatalytic activity. This indicates that the photocatalytic activity decreases when the sample surface is completely covered with Ti 2 O 3 .
【００１４】[0014]
【発明の効果】組成比の異なる酸化チタンからなるＴｉ
2Ｏ3／ＴｉＯ2膜は、銅などの遷移金属を使用しなくて
も光触媒反応効率を向上させることができ、これにより
光触媒材料のリサイクル利用も容易になる。EFFECTS OF THE INVENTION Ti made of titanium oxide having a different composition ratio
The 2 O 3 / TiO 2 film can improve the photocatalytic reaction efficiency without using a transition metal such as copper, which facilitates recycling of the photocatalytic material.
【図１】 図１は、それぞれシリコン単結晶基板、サフ
ァイア単結晶基板、又は石英ガラス基板を基板とする本
発明のＴｉ2Ｏ3／ＴｉＯ2膜の光触媒性能を示す図であ
る。FIG. 1 is a diagram showing the photocatalytic performance of a Ti 2 O 3 / TiO 2 film of the present invention using a silicon single crystal substrate, a sapphire single crystal substrate, or a quartz glass substrate as a substrate, respectively.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 伊藤 久義 群馬県高崎市綿貫町1233番地 日本原子力 研究所高崎研究所内 Ｆターム(参考） 4G047 CA02 CB04 CC03 CD02 4G069 AA03 AA08 BA04A BA04B BB04A BB04B BC50A BC50B DA05 EA08 EB15X EC28 FA01 FA03 FB02 FC06 FC07 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Hisayoshi Ito 1233 Watanuki-cho, Takasaki-shi, Gunma Japan Nuclear Power Research Institute Takasaki Research Center F-term (reference) 4G047 CA02 CB04 CC03 CD02 4G069 AA03 AA08 BA04A BA04B BB04A BB04B BC50A BC50B DA05 EA08 EB15X EC28 FA01 FA03 FB02 FC06 FC07
Claims (3)
の厚さで成膜した後ＴｉＯ2膜の上にＴｉ2Ｏ3を部分的
に蒸着する、光触媒二酸化チタンの製造方法であって、
ＴｉＯ2の光触媒活性が増大されることを特徴とする方
法。1. TiO 2 100-200 nm on a substrate
And then partially vapor depositing Ti 2 O 3 on the TiO 2 film.
A process characterized in that the photocatalytic activity of TiO 2 is increased.
ーザ蒸着法により酸素を含む雰囲気下でＴｉＯ2を成膜
し真空下でＴｉ2Ｏ3を蒸着する、請求項１記載の方法。2. The method according to claim 1, wherein at a substrate temperature of 400 to 600 ° C., a TiO 2 film is formed by a laser deposition method in an atmosphere containing oxygen and Ti 2 O 3 is deposited under vacuum.
ア単結晶基板、又は石英ガラス基板である、請求項１又
は２に記載の方法。3. The method according to claim 1, wherein the substrate is a silicon single crystal substrate, a sapphire single crystal substrate, or a quartz glass substrate.
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|---|---|---|---|
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|---|---|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006054954A1 (en) * | 2004-11-22 | 2006-05-26 | Water And Environmental Technologies Pte. Ltd | Fabrication of a densely packed nano-structured photocatalyst for environmental applications |
| CN1330413C (en) * | 2004-09-15 | 2007-08-08 | 上海师范大学 | Process for preparing TiO2 light catalytic transparent film |
| WO2021176946A1 (en) * | 2020-03-06 | 2021-09-10 | 株式会社村田製作所 | Photocatalyst article, manufacturing method thereof, manufacturing method of photocatalytic reaction product using photocatalyst article, and photocatalytic reaction device |
-
2002
- 2002-04-10 JP JP2002107886A patent/JP2003299966A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1330413C (en) * | 2004-09-15 | 2007-08-08 | 上海师范大学 | Process for preparing TiO2 light catalytic transparent film |
| WO2006054954A1 (en) * | 2004-11-22 | 2006-05-26 | Water And Environmental Technologies Pte. Ltd | Fabrication of a densely packed nano-structured photocatalyst for environmental applications |
| WO2021176946A1 (en) * | 2020-03-06 | 2021-09-10 | 株式会社村田製作所 | Photocatalyst article, manufacturing method thereof, manufacturing method of photocatalytic reaction product using photocatalyst article, and photocatalytic reaction device |
| JPWO2021176946A1 (en) * | 2020-03-06 | 2021-09-10 | ||
| JP7311024B2 (en) | 2020-03-06 | 2023-07-19 | 株式会社村田製作所 | Photocatalytic product, method for producing the same, method for producing a photocatalytic reaction product using the same, and photocatalytic reaction device |
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