JP2003298187A5 - - Google Patents
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- Publication number
- JP2003298187A5 JP2003298187A5 JP2003082487A JP2003082487A JP2003298187A5 JP 2003298187 A5 JP2003298187 A5 JP 2003298187A5 JP 2003082487 A JP2003082487 A JP 2003082487A JP 2003082487 A JP2003082487 A JP 2003082487A JP 2003298187 A5 JP2003298187 A5 JP 2003298187A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/106,678 US6813295B2 (en) | 2002-03-25 | 2002-03-25 | Asymmetric InGaAsN vertical cavity surface emitting lasers |
| US10/106678 | 2002-03-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003298187A JP2003298187A (ja) | 2003-10-17 |
| JP2003298187A5 true JP2003298187A5 (ja) | 2006-05-18 |
Family
ID=27804354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003082487A Withdrawn JP2003298187A (ja) | 2002-03-25 | 2003-03-25 | 非対称ＩｎＧａＡｓＮ垂直空胴表面放出レーザ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6813295B2 (ja) |
| EP (1) | EP1349246B1 (ja) |
| JP (1) | JP2003298187A (ja) |
| DE (1) | DE60230383D1 (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4722404B2 (ja) * | 2004-02-24 | 2011-07-13 | 日本電信電話株式会社 | 長波長帯面発光半導体レーザ |
| US7372886B2 (en) | 2004-06-07 | 2008-05-13 | Avago Technologies Fiber Ip Pte Ltd | High thermal conductivity vertical cavity surface emitting laser (VCSEL) |
| US8253166B2 (en) * | 2004-09-14 | 2012-08-28 | Finisar Corporation | Band offset in AlInGaP based light emitters to improve temperature performance |
| DE102005004582A1 (de) * | 2005-01-26 | 2006-07-27 | Philipps-Universität Marburg | III/V-Halbleiter |
| JP5369325B2 (ja) * | 2005-01-26 | 2013-12-18 | フィリップス ウニベルジテート マールブルグ | Ｉｉｉ／ｖ半導体 |
| US7817691B2 (en) | 2006-05-19 | 2010-10-19 | Nec Corporation | Light emitting device |
| US8355421B2 (en) * | 2009-09-16 | 2013-01-15 | Furukawa Electric Co., Ltd | Vertical-cavity surface emitting laser |
| RU2672776C2 (ru) * | 2014-02-25 | 2018-11-19 | Конинклейке Филипс Н.В. | Светоизлучающие полупроводниковые устройства с геттерным слоем |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US50934A (en) | 1865-11-14 | Improvement in devices for opening artesian wells | ||
| GB2277405A (en) * | 1993-04-22 | 1994-10-26 | Sharp Kk | Semiconductor colour display or detector array |
| US5912913A (en) * | 1995-12-27 | 1999-06-15 | Hitachi, Ltd. | Vertical cavity surface emitting laser, optical transmitter-receiver module using the laser, and parallel processing system using the laser |
| JPH09213918A (ja) * | 1996-02-01 | 1997-08-15 | Furukawa Electric Co Ltd:The | 光電子集積回路素子 |
| JP3788831B2 (ja) * | 1996-08-30 | 2006-06-21 | 株式会社リコー | 半導体素子およびその製造方法 |
| JP3449516B2 (ja) * | 1996-08-30 | 2003-09-22 | 株式会社リコー | 半導体多層膜反射鏡および半導体多層膜反射防止膜および面発光型半導体レーザおよび受光素子 |
| US6304588B1 (en) * | 1997-02-07 | 2001-10-16 | Xerox Corporation | Method and structure for eliminating polarization instability in laterally-oxidized VCSELs |
| KR100413792B1 (ko) * | 1997-07-24 | 2004-02-14 | 삼성전자주식회사 | 질화갈륨 층과 공기층이 반복 적층된 분산브래그 반사기를구비한 단파장 면발광 반도체 레이저장치 및 그 제조 방법 |
| US5903586A (en) | 1997-07-30 | 1999-05-11 | Motorola, Inc. | Long wavelength vertical cavity surface emitting laser |
| US5978398A (en) * | 1997-07-31 | 1999-11-02 | Motorola, Inc. | Long wavelength vertical cavity surface emitting laser |
| US6015979A (en) * | 1997-08-29 | 2000-01-18 | Kabushiki Kaisha Toshiba | Nitride-based semiconductor element and method for manufacturing the same |
| US6207973B1 (en) * | 1998-08-19 | 2001-03-27 | Ricoh Company, Ltd. | Light emitting devices with layered III-V semiconductor structures |
| US6238944B1 (en) * | 1999-12-21 | 2001-05-29 | Xerox Corporation | Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source |
| US6931042B2 (en) * | 2000-05-31 | 2005-08-16 | Sandia Corporation | Long wavelength vertical cavity surface emitting laser |
| WO2001093387A2 (en) * | 2000-05-31 | 2001-12-06 | Sandia Corporation | Long wavelength vertical cavity surface emitting laser |
| JP3735047B2 (ja) * | 2000-07-31 | 2006-01-11 | 古河電気工業株式会社 | 半導体レーザ素子及びその作製方法 |
| KR100374796B1 (ko) * | 2001-02-02 | 2003-03-03 | 삼성전기주식회사 | Ｐ형 전극과 활성층 사이에 효과적인 정공 확산을 위한 스페이서를 구비하는 ＧａＮ 면 발광 레이저 다이오드 및그 제조 방법 |
| JP2003017812A (ja) * | 2001-04-25 | 2003-01-17 | Furukawa Electric Co Ltd:The | 半導体レーザ素子 |
| US6680964B2 (en) * | 2001-12-07 | 2004-01-20 | Agilent Technologies, Inc. | Moisture passivated planar index-guided VCSEL |
| US6455340B1 (en) * | 2001-12-21 | 2002-09-24 | Xerox Corporation | Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff |
-
2002
- 2002-03-25 US US10/106,678 patent/US6813295B2/en not_active Expired - Fee Related
- 2002-10-22 EP EP02023534A patent/EP1349246B1/en not_active Expired - Fee Related
- 2002-10-22 DE DE60230383T patent/DE60230383D1/de not_active Expired - Fee Related
-
2003
- 2003-03-25 JP JP2003082487A patent/JP2003298187A/ja not_active Withdrawn