JP2003297818A5

JP2003297818A5 -

Info

Publication number: JP2003297818A5
Application number: JP2002104011A
Authority: JP
Filing date: 2002-04-05
Publication date: 2005-03-03
Anticipated expiration: 2022-04-05

Claims

  A reaction chamber for storing stacked substrates;
  A gas introduction part;
  A substrate processing apparatus comprising a buffer chamber,
  The gas introduction part is provided along the stacking arrangement direction of the substrates, introduces a substrate processing gas into the buffer chamber,
  The buffer chamber has a plurality of gas supply ports provided along the stacking direction of the substrates, and the processing gas introduced from the gas introduction unit is transferred from the gas supply ports to the reaction chamber. A substrate processing apparatus characterized by being supplied.

The substrate processing apparatus according to claim 1,
The substrate processing apparatus, wherein the plurality of gas supply ports provided in the buffer chamber have substantially the same opening area.

The substrate processing apparatus according to claim 1, wherein the gas introduction unit is provided with a plurality of gas introduction ports along a stacking direction of the substrates.

The gas introduction unit includes a gas supply pipe provided in the buffer chamber, and the gas supply pipe is provided with a plurality of gas introduction ports along a stacking arrangement direction of the substrates. The substrate processing apparatus according to claim 1 or 2.

The substrate processing apparatus according to claim 3, wherein an opening area of the plurality of gas introduction ports of the gas introduction portion increases from the upstream side toward the downstream side.

3. The substrate processing apparatus according to claim 1, wherein the plurality of gas supply ports of the buffer chamber are arranged at the same pitch as the pitch of the stacked substrates.

The substrate processing apparatus according to claim 1, further comprising another buffer chamber.

The substrate processing apparatus according to claim 1, wherein a gas activation member that activates the substrate processing gas is provided in the buffer chamber.

9. The substrate processing apparatus according to claim 8, wherein the gas activation member is an electrode for generating plasma.

The substrate processing apparatus according to claim 9, wherein a protective member is provided on the electrode so that the buffer chamber atmosphere and the electrode are not in contact with each other.

11. The substrate processing apparatus according to claim 10, wherein the protective member is filled with an inert gas or the protective member is purged with an inert gas.

A remote plasma unit connected to the gas introduction unit;
The substrate processing apparatus according to claim 1, wherein the substrate processing gas activated by the remote plasma unit is introduced into the buffer chamber from the gas introduction unit.

A reaction chamber for storing stacked substrates;
  Multiple buffer chambers;
  A substrate processing apparatus comprising a plurality of gas introduction portions for introducing a substrate processing gas into each of the plurality of buffer chambers,
  The plurality of buffer chambers each have a plurality of gas supply ports provided along a stacking arrangement direction of the substrates, and supply the processing gases respectively introduced from the plurality of gas introduction portions. A substrate processing apparatus, wherein the substrate processing apparatus supplies the reaction chamber through a mouth.

A reaction chamber for storing stacked substrates;
  Multiple buffer chambers;
  A plurality of gas introduction portions for introducing substrate processing gases into the plurality of buffer chambers, respectively,
  The plurality of buffer chambers each have a plurality of gas supply ports provided along the stacking direction of the substrates, and the substrate processing gases respectively introduced from the plurality of gas introduction portions are supplied to the plurality of buffer chambers. A reaction vessel that is supplied to each of the reaction chambers from a gas supply port.

At least one of the plurality of gas introduction portions is along a stacking direction of the substrates. The reaction container according to claim 14, wherein the reaction container is provided.

A reaction chamber for storing stacked substrates;
  A gas introduction part;
  A reaction vessel comprising a buffer chamber,
  The gas introduction part is provided along the stacking arrangement direction of the substrates, introduces a substrate processing gas into the buffer chamber,
  The buffer chamber has a plurality of gas supply ports provided along the stacking direction of the substrates, and the processing gas introduced from the gas introduction unit is transferred from the gas supply ports to the reaction chamber. A reaction vessel characterized by being supplied.

A processing chamber containing a plurality of substrates;
  A first gas supply unit including a plurality of first gas supply ports;
  A second gas supply unit including a plurality of second gas supply ports;
  A substrate processing apparatus comprising: a third gas supply unit including a plurality of third gas supply ports;
  A first processing gas used for processing the substrate in an activated state, wherein the first processing gas supplied to the second gas supply unit is the plurality of second gas supplies. The first processing gas supplied from the opening into the first gas supply unit and further supplied from the second gas supply unit is supplied from the plurality of first gas supply ports into the processing chamber;
  The substrate processing apparatus, wherein the second processing gas that is not activated and is supplied to the third gas supply unit is supplied into the processing chamber from the plurality of third gas supply ports.

The first processing gas is activated in the first gas supply section after being supplied into the first gas supply section from the plurality of second gas supply ports. 18. The substrate processing apparatus according to 17.

A reaction chamber capable of storing a plurality of substrates;
  Multiple buffer chambers;
  A plurality of gas introduction portions capable of introducing a substrate processing gas into each of the plurality of buffer chambers, and an elongated reaction vessel comprising:
  The plurality of buffer chambers each have a plurality of gas supply ports provided along a longitudinal direction of the reaction vessel, and the substrate processing gases respectively introduced from the plurality of gas introduction portions are supplied to the plurality of gases. A reaction vessel capable of being supplied to each of the reaction chambers from a supply port.

The reaction container according to claim 19, wherein at least one of the plurality of gas introduction portions is provided along a longitudinal direction of the reaction container.

A reaction chamber capable of storing a plurality of substrates;
  A gas introduction part;
  An elongated reaction vessel comprising a buffer chamber,
  The plurality of gas introduction portions can introduce a substrate processing gas into the buffer chamber, and are provided along the longitudinal direction of the reaction vessel.
  The buffer chamber has a plurality of gas supply ports provided along the longitudinal direction of the reaction vessel, and the substrate processing gas introduced from the gas introduction unit is supplied from the gas supply ports to the reaction chamber. A reaction vessel characterized in that it can be supplied to the reactor.