JP2003293130A - Sputtering system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sputtering system which improves productivity by improving the use efficiency of a target. <P>SOLUTION: This sputtering system includes: a target 20 which is opposed to and spaced from a substrate holder 10a, has a rectangular and flat plate form, and has an elliptic arc-shaped projecting part 20aa added to both ends in a rectangular longitudinal direction; a magnet unit structure 32 opposed to and spaced from the rear side; a mounting member 34 and a plurality of magnet units 36 attached to the member 34; and a movement mechanism 38 to move the mounting member 34 reciprocately. Each end of the mounting member 34 includes: an elliptic arc-shaped yoke 36c set to be correspondent to an erosion region for the target 20; outer circumference magnets 36b formed along the outer circumference of the yoke 36c; and the magnet units 36 including central magnets 36a having a reverse polarity to the outer circumference magnets provided in the vicinity of the central part of the yoke 36c. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus, and more particularly to a sputtering apparatus aimed at improving productivity by devising the shapes of a target and a magnetron cathode.

[0002]

2. Description of the Related Art In a conventional general sputtering apparatus,
The film formation on the substrate was performed by sputtering with respect to one target having a size capable of forming a film on the film formation surface of the substrate.

FIG. 10 is a schematic view for explaining a main part in a sputtering process chamber (also referred to as a sputtering chamber) of a conventional sputtering apparatus, and is a plan view seen from above parallel to a substrate surface. The conventional example shown in FIG. 10 is an example of double-sided film formation. 100 is a substrate holder,
Reference numeral 102 is a gate valve, and reference numeral 104 is a substrate mounted on a substrate holder. As is well known, these substrates 104 are used for the gate valve 1 with respect to the sputtering chamber.
After 02, it is carried in and out in the direction of arrow a.

Reference numeral 110 denotes a cathode having a cathode mounting surface parallel to the substrate surface, and 112.
Is a target mounted on this cathode mounting surface.

The target 112 is usually larger than the size of the substrate. In a conventional sputtering chamber, one target is associated with one substrate, and the targets are arranged at positions suitable for film formation so as to face each other.
The film was being formed. Therefore, in the case of sequentially laminating films on one substrate using different types of targets,
Usually, the same number of dedicated sputtering chambers as the types of targets were prepared, and film formation was sequentially performed in each sputtering chamber.

Further, for example, Japanese Unexamined Patent Application Publication No.
No. 01-140069 discloses a sputtering apparatus for uniformly forming a thin film on a large rectangular substrate, in which a structure having a plurality of magnet units as a magnetron cathode is arranged on the back side of a rectangular target. A configuration for reciprocating this is known.

[0007]

However, when such a conventional magnetron cathode is used, it is difficult to make uniform the erosion of the target edge, especially regarding the erosion of the rectangular target. Therefore, it is unavoidable that there will be uncut material at the edge of the target, and the target will be used efficiently.
It was difficult to improve productivity.

That is, the object of the present invention is to improve the efficiency of use of the target and the productivity by increasing the uniformity of the erosion of the target by devising the shapes of the target and the magnetron cathode. Another object is to provide a sputtering device.

[0009]

In order to achieve this object, a sputtering apparatus of the present invention comprises a sputtering chamber, a substrate holder that is freely carried in and out of the sputtering chamber, and a magnetron cathode. . The magnetron cathode includes a target and a magnet unit structure. The target faces the substrate holder,
Further, they are provided so as to be separated from each other, and the overall planar shape thereof is a shape in which elliptical arc-shaped protrusions are added to both ends of the rectangle in the longitudinal direction. The magnet unit structure is provided so as to face the back surface side of the target and be separated from each other.

Further, the magnet unit structure is composed of a mounting member and a plurality of magnet units mounted on the mounting member, and is connected to a motion mechanism for reciprocating the target in the longitudinal direction.

Among the magnet units, the magnet units attached to both ends of the attaching member have an arc-shaped yoke having at least a part of an ellipse which is set so as to correspond to the erosion region with respect to the target, and the outer periphery of the yoke. And a central magnet having a polarity opposite to that of the peripheral magnet provided near the center of the yoke.

With such a structure of the magnetron cathode, erosion can be made uniform over almost the entire area of the target, and no uncut residue particularly occurs at the edge of the target. Therefore, the target can be efficiently used.

Further, in a preferred configuration example of the present invention, the overall planar shape of the magnet unit provided on the mounting member may be elliptical, and the number of magnet units installed may be one.

Further, in a preferred configuration example of the present invention, the mounting member is provided with two or more magnet units, and the two magnet units provided at both ends of the mounting member have the same elliptical shape. Is good.

By doing so, it is possible to easily adjust the erosion other than the edge portion of the target.

Further, in a preferred configuration example of the present invention, the mounting member may be provided with three or more magnet units having the same elliptical shape.

In this case, the magnet unit includes a circular yoke, an outer peripheral magnet provided along the outer periphery of the yoke, and a circular central magnet provided at the center of the yoke. Is preferred. That is, it is preferable that the magnet unit has a perfect circular shape when the entire unit is viewed in plan. At this time, the magnetic field strength of each of the plurality of magnet units can be appropriately changed in consideration of the erosion of the entire target, the film forming conditions, and the like. That is, when a plurality of magnet units are arranged, the magnetic field strengths of all the magnet units may or may not be uniform.

At this time, the entire magnet unit, that is, the yoke, the outer peripheral magnet and the central magnet are integrated, or only a part of the magnetic unit, that is, the outer peripheral magnet or the central magnet is
The yoke may be configured to be rotatable about the center of rotation.

Further, according to another preferred configuration example of the sputtering apparatus of the present invention, it is provided with two or more magnetron cathodes and two or more magnetron cathode positioning mechanisms provided on the magnetron cathodes. Good.

In particular, if the number of magnetron cathodes is two or more, the same type of target can be mounted on a plurality of magnetron cathodes. For this reason,
Instead of using one large-sized target, it is divided into a plurality of small-sized targets, and by mounting the same type of target on the magnetron cathode,
It is possible to form a film with a more uniform film thickness on a common substrate. In particular, when the substrate is a glass substrate, the larger the size of the glass substrate, the more the targets can be arranged with the same area as the glass substrate of the smaller size. From the viewpoint of, it becomes more advantageous.

In a more preferable configuration example, one center-side magnetron cathode located opposite to the vicinity of the center of the substrate and two peripheral-side magnetron cathodes located on both sides of the center-side magnetron cathode are provided. A magnetron cathode is preferable.

Further, according to the configuration example of the sputtering apparatus of the present invention, preferably, the magnetron cathode includes a plurality of targets and a plurality of magnet unit structures corresponding to the number of the targets. Is good.

With such a configuration, a plurality of targets can be provided on one magnetron cathode. Therefore, if the targets of each magnetron cathode are of the same kind, the film formation is performed first. When a film having a component different from that of the above film is formed, the magnetron cathode can be rotated by a target positioning mechanism to select and position a target for forming a film having a different component. Therefore, it is possible to continuously form films of two or more different components on the same substrate in the same sputtering chamber.

For this reason, it is not necessary to carry in and carry out a substrate to and from a different sputtering chamber for each component of the film, and the work accompanying it, so that further space saving and higher throughput can be achieved as compared with the conventional apparatus.

According to another preferred configuration example of the present invention, the magnetron cathode is provided with two targets on two outer surfaces facing each other, and the magnet unit structure has one mounting member. On both sides of each of the two mounting members, or on one side of each of the two mounting members, at least at both ends.
Advantageously, the magnet unit is set to correspond to the erosion area for the edge of one target.

According to still another preferred configuration example of the sputtering device of the present invention, the magnetron cathode is provided with three targets on three outer surfaces, respectively, and the magnet unit structure has three targets. It is preferable to include three mounting members, and the protrusions at both ends of the main surfaces of the three mounting members are provided with magnet units set so as to correspond to the erosion area with respect to the target.

The sputtering apparatus of the present invention is preferably a double-sided film forming type. If you do this, 2
Since it is possible to perform film formation processing on one substrate at the same time, high throughput can be achieved.

[0028]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the sputtering apparatus of the present invention will be described below with reference to the drawings.
In these drawings, the shape, size, and arrangement relationship of each constituent element are only schematically shown so that the present invention can be understood. In addition, although a preferred configuration example of the present invention will be described below, the present invention is not limited to this preferred example, and many modifications and changes can be made without departing from the gist of the present invention.

[First Embodiment] FIG. 1 is a schematic diagram for explaining a sputtering apparatus 10 according to a first embodiment of the present invention. FIG. 1A is a schematic cross-sectional view mainly showing the positional relationship between a substrate 12 which is a main constituent element in a sputtering chamber 14 of a sputtering apparatus 10 of the present invention and a magnetron cathode 30 including a target 20. Is.

In the configuration example shown in FIG. 1A, one substrate 12, here, for example, a glass substrate, is mounted on the substrate holder 10a. The substrate 12 is erected in a direction perpendicular to the plane of the drawing and held by the substrate holder 10a. The film formation surface 12a of the substrate 12 is usually a flat surface.

The substrate 12 has a rectangular parallel flat plate, for example. The substrate holder 10a is mounted in the sputtering chamber 1 with the substrate 12 mounted in the direction of the arrow a.
4 can be carried in and out via the gate valve 16.

A target 20 is provided so as to face the film formation surface 12a of the substrate 12. In this configuration example, the target 20 is configured by a substantially rectangular flat plate when viewed in plan. Target 2
On the back surface side of 0, a magnet unit structure 32 in which a plurality of magnet units 36 are arranged in parallel and a magnet unit structure 3
2 includes a movement mechanism 38 that reciprocates the main surface 34a in the longitudinal direction of the main surface 34a, that is, in the direction of arrow a. Although a detailed description of the magnet unit structure 32 will be given later, the movement mechanism 38 preferably adopts a conventionally known structure such as a slide rail and a motor provided outside the magnetron cathode for sliding the slide rail. Therefore, detailed description is omitted.

FIG. 1B shows the target surface 20 of the magnetron cathode 30 of the sputtering apparatus of the present invention.
It is a schematic plan view seen from the a side.

The target 20 is a rectangular flat plate, and has a shape in which projections 20aa are attached to both ends in the longitudinal direction. The edge of the target 20, that is, the shape of the protrusion 20aa is a semicircle having a diameter of the short length of the target 20. Therefore, the target in this configuration example is composed of a central rectangular portion, that is, a rectangular portion, and a circular portion as a protruding portion integrally and continuously provided at both ends in the longitudinal direction. However, the purpose of providing the protruding portion 20aa is to reduce the uncut portion of the edge portion of the target 20 as much as possible, and thus the shape is not limited to this circular shape as long as this purpose is not impaired. Therefore, the shape of the protrusion 20aa can be, for example, a curve having an appropriate curvature, that is, a part of an arc of an ellipse including a perfect circle. Considering the simplification of the manufacturing process and the like, the semicircular shape shown in the drawing is preferable.

FIG. 2 is a schematic plan view for explaining the structure of a magnet unit structure suitable for application to the sputtering apparatus of the present invention.

FIG. 2A is a schematic plan view for explaining the structure of the magnet unit structure 32 of FIG. 1 when seen in plan from the magnet unit mounting surface.

The magnet unit structure 32 includes a flat plate-shaped mounting member 34. The shape of the mounting member 34 is not particularly limited as long as the designed magnet unit 36 can be mounted on the mounting member 34. However, as shown in the figure, the mounting member 34 has an end edge portion of the outer shape of the magnet unit 36, that is, the yoke 36c and the yoke 36c. It is preferable to mold it according to the contour of the peripheral magnets provided on it.

On both ends of one side of the mounting member 34 of the magnet unit structure 32, that is, the mounting member main surface 34a, a circular yoke 3 having a rectangular short length of the mounting member 34 as a diameter.
6c and the central magnet 3 provided at the center of the yoke 36c
6a and a central magnet 36a that are concentrically provided so as to surround the central magnet 36a along the outer circumference of the yoke.
Magnet unit 3 including an outer peripheral magnet 36b having a polarity opposite to
It has 6. Here, the protrusion 34aa of the mounting member 34 has a semicircular shape according to the shape of the outer peripheral magnet 36b, but it does not necessarily have to match the shape of the magnet unit.

Particularly, the shapes and arrangements of the magnet units 36 provided at the two end edges of the mounting member 34, that is, the center magnet 36a and the outer peripheral magnet 36b, follow the shape of the end edges of the target set as described above. Then, the erosion generation area 33 is set to be generated. The erosion generation area 33 is particularly the central magnet 36a and the outer peripheral magnet 3
It is an erosion region generated in the target by the action of 6b. Therefore, the erosion generation region 33 includes the center magnet 3 so as to include the edge portion of the target without excess or deficiency.
The magnet unit 36 is designed so that the shape, size and properties of the 6a and the outer peripheral magnet 36b, and the positional relationship between the center magnet 36a and the outer peripheral magnet 36b are optimized, and the magnet unit 36 is provided at the end edge of the mounting member 34.

At this time, the two magnet units 36 provided on both end edges of the mounting member 34 may be combined as a unit to provide one magnet unit 36 as the entire magnet unit structure 32. As a specific example, an outer peripheral magnet 36a having an elliptical shape, preferably a circular shape.
It is preferable to provide one magnet unit 36 including the center magnet 36b and the center magnet 36b.

Since the object of the present invention is to prevent the uncut portion from occurring particularly at the edge portion of the target, it is necessary to ensure the erosion uniformity of the entire target, except for the edge portion of the mounting member 34. The shape, size, and generated magnetic field strength of the magnet unit 36 provided in the above can be arbitrary. That is, the mounting member 34
One or two or more magnet units 36 provided by being sandwiched between the two magnet units 36 provided at the edge of
A shape different from the magnet unit provided at the edge,
It can be of size and nature. Specifically, for example, as a conventionally used rectangular shape, properties such as magnetic field strength can be appropriately selected in order to make the erosion of the entire target uniform.

In the magnet unit structure 32 of FIG. 2A, the three magnet units 36 are mounted at equal intervals on the mounting member 3.
4 shows an example in which they are installed in parallel. At this time, the magnet units provided on the end edge portion of the mounting member 34 are all the same shape, the same size, and the circular shape.
As described above, since it is to prevent the uncut portion that particularly occurs at the target edge portion, the shape of the magnet unit does not always have to be as shown in the figure as long as it is possible to prevent the uncut portion particularly at the target edge portion. It is not limited to a perfect circle. Specifically, as described above, it is preferable that the shape of a part of an arc of an ellipse including a perfect circle is matched with the shape of the target to be used, particularly the edge portion.

FIG. 2B is a schematic view for explaining the structure of the magnet unit structure 32 having a structure different from that of the magnet unit shown in FIG. FIG.

Since the configuration other than the magnet unit 36 is the same as that described above, detailed description will be omitted.

In this example, the magnet units 36 provided at both ends of the mounting member 34 have a semicircular shape. That is, the erosion region 33 is set so as to include the shape of the edge portion of the target used without excess or deficiency, and the yoke 36c and the central magnet 36a are formed into a semicircular shape based on the erosion region 33, and the shape of the outer peripheral magnet is changed. It is an arc of a semicircle. The semi-circular arc is provided on the end edge of the mounting member 34 so that it is directed outward.

At this time, when viewed in plan, the mounting member 34
Although the shape of the two magnet units 36 provided at the edge portions of the magnets cannot be said to be the same, the two magnet units 3 having the same shape
When mounting 6 on the mounting member 34, in this case 180 °
Since it suffices to rotate the magnet units 36 in this specification, the magnet units 36 provided as in this example have the same shape.

The spacing between the plurality of adjacent magnet units 36 described above is preferably the width of the magnet unit 36, that is, the magnet unit 3 having a circular shape, for example.
In the case of 6, the diameter is preferably 1/10 or more. With this setting, the target erosion uniformity is further improved.

Further, the magnet unit 36 has the yoke 36c, the outer peripheral magnet 36b, and the central magnet 36a integrally, or a part of the magnet unit 36, that is, the outer peripheral magnet 36b or the central magnet 36a, with the rotation axis C as the center. As an alternative, the structure may be freely rotatable in the direction of arrow b.

With such a structure, the erosion of the target can be made more efficient.

[Second Embodiment] FIG. 3 is a schematic cross-sectional view for explaining an arrangement relationship of main components of a sputtering apparatus 10 according to a second embodiment of the present invention. In this embodiment, an example in which a plurality of magnetron cathodes are provided will be described.

According to the sputtering apparatus of this embodiment, a plurality of films are formed facing the film formation surface 12a of the substrate 12.
Here, as an example, three magnetron cathodes, that is, the center side magnetron cathodes 30 arranged in the center are used.
B, and two peripheral magnetron cathodes 30A and 30C disposed on either side thereof.

In this example, an example in which three magnetron cathodes are provided will be described, but the present invention is not limited to this, and by adding a center side magnetron cathode and / or a peripheral side magnetron cathode, more than three magnetron cathodes can be provided. It can be configured to be provided. For example, when four magnetron cathodes are provided, the number of center side magnetron cathodes may be two. These three magnetron cathodes rotate (also referred to as rotation) about the central axes C1, C2, and C3, respectively, and are stopped at appropriate rotation positions so that they can be positioned at the stop positions. It has a positioning mechanism.

Unless otherwise specified, the plurality of magnetron cathodes may have the same structure, but the structure is not limited to this.

The three magnetron cathodes 30A, 30B and 30C shown in the figure have the same structure, that is, the same shape and the same size, and are sequentially arranged in the carrying-in / carrying-out direction of the substrate holder 10a.

Targets 20a, 20c and 20e are provided on the surfaces of the magnetron cathodes 30A, 30B and 30C facing the film-forming surface 12a, and targets 20b, 20d and 20f are provided on the opposite surfaces. Each is provided.

In FIG. 3, the centers of the rectangular cross sections of the magnetron cathodes 30A, 30B and 30C are the central axes, that is, the rotation axes C1, C2 and C3 in this configuration example. These rotation axes C1, C2, and C3 are parallel to the film formation surface, and the rotation axes are also parallel to each other. The magnetron cathodes 30A, 30B and 30C are, as shown by arrows b around the rotation axes C1, C2 and C3,
It is configured to rotate in both forward and reverse directions.

The rotation axis C2 of the center side magnetron cathode 30B is aligned with the center of the substrate 12, and the rotation axis C1 of the peripheral side magnetron cathodes 30A and 30C on both sides.
And C3 are positioned equidistant from the axis of rotation C2. Further, the rotation axes C1 and C3 are positioned at the same distance from the film formation surface 12a, that is, the substrate surface, and are closer to the substrate surface than the rotation axis C2 of the center-side magnetron cathode 30B. In any case, the targets mounted on these magnetron cathodes are positioned so as to have an optimum positional relationship for film formation with the film formation surface 12a and between the targets.

These three magnetron cathodes 30
Of the targets mounted on A, 30B and 30C,
The targets mounted on the film formation surface 12a side are targets of the same type. The target mounted on the opposite side of the film formation surface 12a of each of the three magnetron cathodes is of a different type from the target mounted on the film formation surface 12a side, and the three magnetron cathodes 3
0A, 30B, and 30C are targets of the same type.

The center-side magnetron cathode 30B is positioned so that the target 20c or 20d, that is, the sputtering target surface of these targets is parallel to the film formation surface 12a. Similarly, the targets 20a, 20 of the peripheral side magnetron cathodes 30A and 30C on both sides of the center side magnetron cathode 30B are centered.
The sputtering target surfaces b, 20e, and 20f are positioned so as to face the film formation surface 12a.

In this case, for example, the targets 20a, 20 of the peripheral side magnetron cathodes 30A and 30C are used.
The intersection angle between the extension line of e and the extension line of the film formation surface 12a is set to be equal to each other at α (angle) (0 ° <α <90 °). Thus, the peripheral side magnetron cathodes 30A and 30C
Targets 20a, 20b and 20e, 20f of the target 20c of the center side magnetron cathode 30B,
It is tilted with respect to the target 20a of the center-side magnetron cathode 30B so as to approach the film formation surface 12a as the distance from 20d increases. As a result, the target sputtering surface of the peripheral side magnetron cathodes 30A and 30C and the film formation surface 12a are inclined (intersect) at an angle α.

The target positioning mechanism for controlling the rotation of the magnetron cathode and the distance adjusting mechanism for adjusting the distance between the target and the film-forming surface and the distance between the magnetron cathodes will be described later.

FIG. 4 shows a target 2 including the substrate 12 and the magnetron cathodes 30A, 30B and 30C in the configuration example using three magnetron cathodes.
It is the schematic for demonstrating the relative positional relationship with 0a, 20c, and 20e. These targets 20a, 20c
And 20e have a rectangular strip shape with semi-circular protrusions attached to the edges as described with reference to FIG. Board 12
Has a long length in the transport direction (x-direction) and a short length in the direction in which the substrate is erected (vertical direction is the z-direction) orthogonal thereto. When the central axes of the respective targets are 01, 02, and 03, the central axes of the targets are parallel to each other and the substrate 12
Is positioned so as to be parallel to the short-side direction of. The center axis 02 of the center target 20c is preferably aligned with the center of the substrate 12. In the configuration example shown in FIG. 3, when the substrate side is viewed in plan from the target side, the targets 20a and 20c facing the substrate peripheral side are the edge side portions on the side away from the target 20b on the center side, That is, a part of the width region in the x direction is separated from the substrate 12,
It is positioned. The relative position of the target with respect to the substrate depends on the positioning of the magnetron cathode. These relative positions may be determined so that an appropriate film can be formed according to the type and size of the target to be mounted and any other suitable conditions. Therefore, when the substrate side is viewed in plan from the target side, the width region of the target may be provided within the substrate surface.

Of course, the shapes and sizes of these targets and the number of the targets facing the substrate at the same time can be arbitrarily set according to the design.

FIG. 5 is a diagram showing a structural example of a magnetron cathode suitable for application to the sputtering apparatus of the present invention. The cross-sectional shape of these magnetron cathodes is rectangular, for example, a rectangular body in which the facing surfaces of the cross-section are parallel planes,
Therefore, the cross section is rectangular as an example. In the magnetron cathode of the sputtering apparatus of the present invention, the illustration and description of the specific configuration of the cathode and the configuration of the electrodes and the like incidental thereto are not the gist of the present invention, so the description thereof is omitted here.

Here, of the three magnetron cathodes 30A, 30B and 30C shown in FIG. 3, the magnetron cathode 30A located on the left side will be described as an example. The configurations of the other two magnetron cathodes are the same, and detailed description thereof will be omitted.

FIG. 5A is a plan view showing a magnetron cathode 30A in which three magnet units 36 are provided on the opposite main surfaces of the mounting member 34, respectively.

Two targets 2 are provided on the two outer surfaces corresponding to the opposite parallel planes of the magnetron cathode 30A.
0a and 20b are provided respectively. Although the target 20b will be described below, the same applies to the target 20a (not shown) present on the lower surface side of the magnetron cathode 30A. The target 20b mounted on the surface of the magnetron cathode 30A is in the shape of a rectangular plate, and has projections 20ba on both end edges thereof.

FIG. 5 (B) is a schematic sectional view of the magnetron cathode of FIG. 5 (A), taken along the broken line CC of FIG.

Two facing magnetron cathodes 30A
Two targets 20a and 20b are provided on one outer surface, respectively.

Internal space 2 of magnetron cathode 30A
1 shows a magnet unit structure 3 in which a plurality of magnet units 36 are juxtaposed on the two main surfaces 34a of the mounting member 34.
The magnet unit structure 32 is provided with the magnet 2 and a movement mechanism 38 that reciprocates the magnet unit structure 32 in its longitudinal direction, that is, the direction of the arrow a.

The magnet unit structure 32 includes a mounting member 34.
Magnet unit 3 provided on the two main surfaces 34a
6 while maintaining a state in which they are equidistantly spaced from the inner space 21 side of the magnetron cathode 30A to the respective back surfaces of the targets 20a and 20b.
Is arranged so that it can be operated by.

Although an example in which the magnet units are provided on the front and back of one mounting member 34 has been described here, FIG.
As described in FIGS. 2A and 2A, the mounting member 34
The two magnet unit structures 32 each having the magnet unit 36 provided on only one surface (main surface) may be provided such that the surfaces not provided with the magnet unit 36 face each other and are bonded if desired. Good.

FIG. 5C is a schematic plan view for explaining the structure of the magnet unit structure 32 described above.
This configuration is the same as that described with reference to FIG. 2A, except that the magnet units 36 are respectively provided on the two opposing main surfaces 34a of the mounting member 34 of the magnet unit structure 32. Therefore, detailed description thereof will be omitted.

The movement mechanism 38 can preferably employ a conventionally known structure such as a slide rail. In FIGS. 5B and 5C, the protrusion 34aa is provided, but it may be provided on the side surface of the attachment member 34, for example. In addition, the internal space 21 of the magnetron cathode 30A
The structure actuating mechanism 38 is not limited to the inside, but may be provided outside thereof.

The stroke of the reciprocating motion of the magnet unit structure 32 of the sputtering apparatus of the present invention is preferably about the sum of the length of the diameter of the magnet unit 36 and the length of the interval between the magnet units 36.

In the magnet unit structure 32 of the sputtering apparatus of the present invention, the separation distance between the magnet unit 36, that is, the magnet unit structure 32 and the target is
For example, it is preferable to have a mechanism (not shown) that can be adjusted according to the integrated power input to the target.

The magnet unit structure 32 is preferably configured so as to rotate integrally when the magnetron cathode is rotationally moved. With such a configuration, it becomes easier to achieve erosion of the target and uniformization of the film thickness.

In the above-mentioned configuration example, while one of the plurality of targets attached to the magnetron cathode is selected for film formation, the remaining targets which are not used and are retracted are cleaned. You can go.
In this way, when one target is formed, the other target that does not face the substrate is preliminarily cleaned to reduce the formal cleaning work during the main film formation. Can be shortened,
Alternatively, the number of cleanings can be reduced.

[Third Embodiment] FIG. 6 is a sectional view similar to FIG. 3, schematically showing a structural example in the case where the sputtering apparatus is a double-sided film forming type. In this case, substrates 12, 12 ', which are glass substrates, for example, are mounted on both sides of the substrate holder 10a in the sputtering chamber.
This is a configuration example in which film formation is simultaneously performed on the film formation surfaces of both substrates 12 and 12 '. In this configuration example, in addition to the magnetron cathodes and the like shown in FIG. 3, in addition to these, another magnetron cathode and the like are symmetrical with respect to the substrate holder 10a.
A surface 12'a opposite to the main surface 12a of the substrate holder 10a
Is also provided. The magnetron cathode and other required constituent elements newly provided symmetrically are indicated by adding a ′ to the reference numerals of the constituent elements shown in FIG.
These additionally provided magnetron cathodes and the like may have the same configuration as the magnetron cathodes and the like described in FIG. 3, and since they have the same action (or function), duplicated detailed description thereof will be omitted. . Also in this configuration example, the magnetron cathodes 30A, 30B,
30C, 30'A, 30'B and 30'C are axes of rotation C
1, C2, C3, C'1, C'2 and C'3 are rotatable in both forward and reverse directions as indicated by arrow c.

According to this structure, it is possible to successively form films of a plurality of components on two substrates in the same sputtering chamber. In that case, during simultaneous film formation on one substrate 12 and the other substrate 12 ′, by rotation of the magnetron cathode,
A target suitable for each film formation is selected and positioned. By doing so, it is also possible to form films of different components on the respective substrates.

Further, in the configuration example shown in FIGS. 3 and 6,
Since two types of targets can be mounted on one magnetron cathode, two types of films can be stacked on the film formation surface of one substrate in the same sputtering chamber. Also,
Even in the case of the double-sided film forming apparatus, film formation may be performed by mounting only one substrate.

FIG. 7 is a schematic plan view for explaining another configuration example in which the present invention is applied to a double-sided film forming apparatus. This configuration example has basically the same configuration as the configuration example of FIG. 5, but differs in that one magnetron cathode includes three targets. Therefore, in this configuration example, description will be given with attention paid to this difference, and detailed description of the same configuration parts as those described above will be omitted.

In the configuration example shown in FIG. 7, three magnetron cathodes having the same configuration are provided on each side of the substrate holder 10a. Magnetron cathode 50, 52, 54, 5
0 ', 52', and 54 'are 30 shown in FIG. 6, respectively.
A, 30B, 30C, 30'A, 30'B and 30'C
It corresponds to. Each of these magnetron cathodes has a substantially hexagonal prism shape, but every other side surface has a large side surface, and a target is provided on these side surfaces. That is, it has a substantially triangular shape in which the corners of the triangle formed by the sides of the triangular magnetron cathode are cut off. Each magnetron cathode rotates (rotates) in the forward and reverse directions about the central axis C50, C52, ... As a rotation axis, and stops at an appropriate rotational position, and then stops. It is formed so that the target can be positioned at a location. The central axis of each magnetron cathode is parallel to the film-forming surface and parallel to the central axis, like the central axes of the magnetron cathodes 30A, 30B, and 30C described above.

Of these six magnetron cathodes, the center side and one peripheral side magnetron cathode 50
And 52 will be described as representatives, and the configuration and operation of the remaining magnetron cathodes are the same as those of either of the magnetron cathodes 50 and 52, so redundant description will be omitted.

The respective rotation axes of the magnetron cathodes 50 and 52 are C50 and C52, and the targets 70a, 70b, and
70c, 72a, 72b, 72c are mounted, respectively. The three targets for one magnetron cathode are different types of targets. Targets of the same type are mounted in the same order position between the magnetron cathodes. Therefore, targets of the same type are made to face the substrate at the same time.

In the configuration example shown in FIG. 7, each magnetron cathode is rotated and first targets of the same kind are positioned so as to face the substrate, and film formation is performed.
In the second film formation, each magnetron cathode is rotated to form a film by positioning the second targets of the same kind as the first target, which are different from the first target, so as to face the substrate. To do. In the third film formation, each magnetron cathode was further rotated and positioned so that the third targets of the same kind as the first and second targets, but of the same kind, face the substrate. , Film formation is performed. Thus, in the same sputtering chamber, on one substrate 12,
Films of three different components can be deposited.

Also in the configuration example shown in FIG. 7, as in the case described with reference to FIG. 3, the sputtering target surface of the target facing the deposition surface of the substrate at the time of deposition, that is, the target of the magnetron cathode is located on the center side. In the case of the magnetron cathode 52, it is parallel to the deposition surface 12a, while in the peripheral magnetron cathode 50, it is inclined at an angle α with respect to the deposition surface 12a. However, the sputtering surfaces of all targets facing the substrate during film formation may be parallel to this substrate surface.

In the configuration example shown in FIG. 7, a shield (also referred to as an attachment jig) 80, 82, 84, 80 ', 82', 8 for covering each magnetron cathode is further provided.
4'are provided respectively. These shields, ie, adhesion preventive jigs, are provided along the central axis direction of the respective magnetron cathodes so as to substantially cover the entire length of the target in the vertical direction. The shields 80, 82, 84, 80 ', 82', 84 'are provided so as to surround the magnetron cathode and not to hinder the rotation of the magnetron cathode. Further, this shield is made so that the targets 70a and 72a facing the film formation surface of the substrate at the time of film formation are exposed from the shields 80 and 82, that is, the targets 70a and 72a which are sputtered at the time of film formation. It is formed so as to be surrounded.

In the configuration example shown in FIG. 7, the cross section of this shield is substantially C-shaped. Therefore, the C-shaped shields 80, 82, 84, 80 ', 82',
84 'vertically divided openings 80a, 82a, 84a, 8
Targets necessary for film formation are positioned on 0'a, 82'a, 84'a.

As described above, by providing the shield, sputtered atoms and undesired particles flying at the time of film formation are deposited on the surface of the target or cathode which is not used at the time of film formation and is retracted. Can be prevented.

The shield can be driven in conjunction with the magnetron cathode by a shield drive mechanism described later, and can also be released from the magnetron cathode. With this shield drive mechanism, it is possible to select the interlocking drive and the interlock release automatically or by an external command. This shield and magnetron cathode are driven in conjunction with each other when adjusting the crossing angle (tilt angle) α between the target sputtering surface and the substrate deposition surface, or within a certain tilt angle (α) range. This is performed when the magnetron cathode is rotationally oscillated within a certain rotation angle range, such as when the tilt angle is periodically changed. Therefore, when the magnetron cathode is rotated to select a target to be sputtered during film formation, the shield and the magnetron cathode are disengaged from each other. In that case, the shield is stationary. .

Further, by providing a cleaning device inside each shield, preliminary cleaning can be carried out for each magnetron cathode without affecting other magnetron cathodes and the substrate.

FIG. 8 is a schematic plan view for explaining a modification of the magnetron cathode. In the configuration example shown in FIG. 8, the magnetron cathode 90 has a triangular columnar structure having a triangular cross section as a whole, and targets 92 are individually fixed on the three surfaces thereof.
The magnetron cathode 90 is rotatable about its central axis (rotational axis) C90.

An internal space 91 is provided in the magnetron cathode 90, and in this internal space 91, a yoke 36c, a central magnet (not shown), and a central magnet (not shown) are provided on one side, as described with reference to FIG. The three magnet unit structures 32 in which the magnet units 36 including the peripheral magnets 36b are arranged are housed, and the magnet units 36 are equidistant from each other on the back surface of the target 92 so that the cross section becomes an equilateral triangle. It is integrally configured so as to face the. The structure and operating mechanism of the magnet unit structure 36 are the same as those in the above-described example, and thus detailed description thereof will be omitted.

The structure in which these three magnet unit structures are combined is suitable for application to the structure of the sputtering apparatus described with reference to FIG.

According to this structure, it becomes possible to successively form films of more components in succession while improving the utilization efficiency of the target. In that case, by rotating the magnetron cathode, a target suitable for each film formation is selected and positioned. At this time,
It is preferable that the magnet unit structure 32 in the internal space 91 also integrally rotates.

Next, the target positioning mechanism and the distance adjusting mechanism will be briefly described with reference to FIG.

FIG. 9A is a schematic explanatory diagram for explaining the target positioning mechanism. 2 in FIG. 9 (A)
Reference numeral 6 is a magnetron cathode, 28 is a rotating shaft provided on the magnetron cathode, and 41 is a rotating mechanism for rotationally driving the rotating shaft, which includes, for example, a motor and a power transmission unit. Reference numeral 45 is a control unit that drives and controls this rotating mechanism. The rotary shaft 28, the rotating mechanism 41, and the control unit 45 form a target positioning mechanism 40. The rotation mechanism 41 and the control unit 45 of the target positioning mechanism 40
Can be easily configured using any suitable technique known in the art. However, in the present invention, the magnetron cathode 2
The rotational drive of No. 6 can be rotated in the forward and reverse directions within an angle range of 360 degrees, and the rotational drive may be stopped at an appropriate rotational position during that time to position the magnetron cathode. Alternatively, if necessary, the magnetron cathode 26 can be alternately rotated in the forward and reverse directions within the required rotation angle range, that is, can be rotationally oscillated.

In order to perform the required control such as the rotation drive, the rotation stop, and the rotational vibration, a program is stored in the control unit 45 in advance, and an automatic command is issued by an external command or without the command. In line with that program,
Desired drive control such as rotation, rotation vibration, and stop may be performed.

Unlike this configuration example, instead of directly connecting the rotating mechanism to the rotating shaft 28, the magnetron cathode 26 itself is mounted on a rotating plate (not shown) which rotates about its central axis, The rotating plate may be configured to be rotated by a rotating mechanism, but which method is used is merely a design problem and is not an essential matter of the present invention.

Further, the target positioning mechanism 40
Can be provided inside or outside the sputtering chamber, and which is provided is only a design matter.

On the other hand, FIG. 9B is a schematic explanatory view for explaining the distance adjusting mechanism. In FIG. 9, reference numeral 42 denotes a stage on which the magnetron cathode 26 and the above-described rotating mechanism 41 are mounted and supported. The stage 42 can be configured by using any suitable method known in the related art. In this configuration example, the two-dimensional or three-dimensional drive mechanism 44
The drive of the stage 42 is controlled by the control unit 45 which controls the drive of the drive mechanism 44. Therefore, the distance adjusting mechanism 46 includes the stage 42, the driving mechanism 44, and the control unit 45.
It consists of and. The drive mechanism 44 moves the stage 42 in two horizontal directions, x and y, and in some cases, in the vertical direction, that is, the z direction, according to a program of the control unit 45
Can be driven.

The distance adjusting mechanism 46 can be provided inside or outside the sputtering chamber. Which one is provided is merely a design problem.

The data necessary for controlling and driving each of the target positioning mechanism 40 and the distance adjusting mechanism 46, the driving procedure, and the like are programmed based on the data obtained in advance by experiments, etc., and the control unit 45 is preliminarily programmed. You can store it in.

These necessary data include, for example, the number of magnetron cathodes, the number of targets attached to one magnetron cathode, the substrate size, the target size and type, the adjustable distance range between the centers of the magnetron cathodes, and the substrate surface. And an adjustable distance range between each magnetron cathode and the center of each magnetron cathode, an adjustable tilt angle range with the substrate surface of the peripheral magnetron cathode, and other appropriate data. These data are obtained in advance as a set of data for obtaining the optimum film as designed for each target type by actual measurement. Each control drive described above may be performed by a program created based on the obtained data.

Further, in the above-mentioned configuration example, the distance adjusting mechanism 46 is configured such that the rotating mechanism 36 is mounted on the stage 42, but the magnetron cathode is moved in each of the x direction, the y direction and the z direction. Any other suitable configuration is also possible as long as it is capable of achieving the above.

Since how to perform such drive control is not an essential matter of the present invention, further description will be omitted.

By the way, in each of the above-mentioned configuration examples described above, it is preferable to provide a cleaning device for cleaning the target not used for sputtering during film formation. This cleaning device
At least for each cathode on which each target is mounted, a dedicated DC or high-frequency power source and a gas supply unit used for cleaning are provided. If necessary, it is preferable that the sputtering chamber is further provided with a shielding means between the region on the film formation side and the region on the cleaning side so that unwanted sputter atoms, gas, and flying particles do not cross each other. These cleaning device and shielding means may have any suitable configuration depending on the design.

In the above-described embodiments, the example in which the glass substrate is mainly used as the substrate has been described, but the present invention is applicable even if a silicon substrate for semiconductors or other substrates is used instead of the glass substrate. In this case, the effect of the present invention can be obtained as in the case of the glass substrate.

In the above-described sputtering apparatus, the characteristic parts of the present invention have been described in detail, but it goes without saying that the sputtering apparatus may be, for example, a vacuum exhaust system, a gas supply system for sputtering, a transport system, a load / unload system. It also has the normally required components such as chambers and other processing chambers. However, since these ordinary components are not essential to the present invention, illustration and description thereof are omitted.

[0111]

As is apparent from the above description, according to the structure of the sputtering apparatus of the present invention, the erosion area by the magnet unit structure of the magnetron cathode is set in accordance with the shape of the target, particularly the edge portion. As described above, the magnet unit is configured to prevent the uncut portion of the target end edge portion, which cannot be avoided in the past, and to make the erosion of the target end edge portion uniform, so that the target can be efficiently used.

Further, according to the sputtering apparatus of the present invention, a plurality of films can be sequentially laminated on the same substrate in the same sputtering chamber. Therefore, there is an advantage that a different sputtering chamber is not required for each film to be formed unlike the conventional sputtering device.

Further, according to the sputtering apparatus of the present invention, the target having the component to be film-formed in one sputtering chamber is divided into a plurality of targets and arranged so as to face the substrate. For this reason, it is possible to use a small-sized target with low manufacturing cost, and it is possible to finely adjust the film formation conditions according to the local area of the substrate surface. The film thickness of the film formed over can be made uniform.

[Brief description of drawings]

FIG. 1 is a schematic diagram for explaining a sputtering device according to a first embodiment of the present invention.

2A and 2B are schematic plan views for explaining an example of a configuration of a magnet unit structure suitable for application to the sputtering apparatus of the present invention.

FIG. 3 is a schematic cross-sectional view of a main part for explaining the configuration of the sputtering apparatus of the present invention, showing an example of a configuration in which three targets are used to simultaneously form a film on one substrate. Is.

FIG. 4 is a schematic explanatory diagram for explaining a relative positional relationship between a cathode of a magnetron cathode and a substrate used in the sputtering apparatus of the present invention.

FIG. 5 is a diagram for explaining an example of a magnetron cathode suitable for application to the sputtering apparatus of the present invention,
(A) is a schematic plan view, (B) is a schematic sectional view,
(C) is a plan view of the magnet unit structure and its operating mechanism.

FIG. 6 is a schematic cross-sectional view of a main part for explaining another configuration example of the sputtering apparatus of the present invention, and is a diagram showing a configuration example in which the present invention is applied to a double-sided film forming apparatus.

FIG. 7 is a schematic plan view of a main part for explaining still another configuration example of the sputtering apparatus of the present invention, showing a configuration example applied to a double-sided film deposition apparatus.

FIG. 8 is a schematic plan view for explaining another configuration example of the magnetron cathode used in the sputtering apparatus of the present invention.

9A is an explanatory diagram for explaining a target positioning mechanism used in the sputtering apparatus of the present invention, and FIG. 9B is an explanatory diagram for explaining a distance adjusting mechanism.

FIG. 10 is used for explaining a conventional sputtering apparatus,
It is a schematic plan view of a main part.

[Explanation of symbols]

10: Sputtering device 10a: Substrate holder 12, 12 ': Substrate 12a, 12'a: Deposition surface 14: Sputtering chamber 16: Gate valves 20, 20a, 20b, 20c, 20d, 20e, 20
f: target 21: internal spaces 26, 30, 30A, 30B, 30C: magnetron cathode 28: rotating shaft 32: magnet unit structure 34: mounting member 34a: main surfaces 20aa, 20ba, 34aa: protrusion 36: magnet unit 36a : Central magnet 36b: Peripheral magnet 36c: Yoke 38: Moving mechanism 40: Target positioning mechanism 41: Rotating mechanism 42: Stage 44: Driving mechanism 45: Control unit 46: Distance adjusting mechanism 80, 82, 84, 80 ', 82 ', 84': Shield (anti-adhesion jig) C1, C2, C3, C'1, C'2, C'3, C50,
C52, C90: (Magnetron cathode) central axis (rotation axis) 01, 02, 03: (Target) central axis

Claims (12)

[Claims] 1. A sputtering apparatus comprising: a sputtering chamber; a substrate holder that can be carried in and out of the sputtering chamber; and a magnetron cathode, wherein the magnetron cathode faces the substrate holder and is separated from the substrate holder. Includes a target having a shape in which elliptical arc-shaped protrusions are added to both ends of a rectangular longitudinal direction, and a magnet unit structure that is provided facing the back surface side of the target and spaced apart from each other. The magnet unit structure includes an attachment member and a plurality of magnet units attached to the attachment member, and is connected to a motion mechanism that reciprocates in the longitudinal direction of the target. The magnet units attached to both ends of the attachment member correspond to erosion regions for the target. The arc-shaped yoke having at least a part of an ellipse, the outer peripheral magnet provided along the outer periphery of the yoke, and the outer peripheral magnet provided near the center of the yoke have opposite polarities. A sputtering apparatus comprising a magnet unit including a central magnet. 2. A sputtering apparatus comprising a sputtering chamber, a substrate holder that can be carried in and out of the sputtering chamber, and a magnetron cathode, wherein the magnetron cathode faces the substrate holder and is separated from the substrate holder. Includes a target having a shape in which elliptical arc-shaped protrusions are added to both ends of a rectangular longitudinal direction, and a magnet unit structure that is provided facing the back surface side of the target and spaced apart from each other. The magnet unit structure includes an attachment member and one magnet unit attached to the attachment member, and the magnet unit structure is connected to a motion mechanism that reciprocates in the longitudinal direction of the target. An at least elliptical yoke set to correspond to the erosion region for the target; A sputtering apparatus comprising: a magnet unit including an outer peripheral magnet provided along an outer periphery and a central magnet provided in the vicinity of a central portion of the yoke and having a polarity opposite to that of the outer peripheral magnet. 3. The attachment member is provided with two or more magnet units, and the two magnet units provided at both ends of the attachment member have the same elliptical shape. The sputtering apparatus according to claim 1. 4. The sputtering apparatus according to claim 1, wherein the attachment member is provided with three or more magnet units having the same elliptical shape. 5. The magnet unit includes a circular yoke, an outer peripheral magnet provided along the outer periphery of the yoke, and a circular central magnet provided at the center of the yoke. The sputtering device according to any one of claims 2 to 4. 6. The magnet unit rotates with the center of the yoke as a rotation axis.
Or the sputtering device according to any one of 5. 7. One or more magnetron cathodes, and one or two provided on the magnetron cathodes.
The sputtering apparatus according to claim 1, further comprising at least one magnetron cathode positioning mechanism. 8. The magnetron cathode comprises one center-side magnetron cathode located near the center of the substrate and facing each other, and two peripheral-side magnetron cathodes located on both sides of both ends of the center-side magnetron cathode. The sputtering apparatus according to claim 7, wherein the sputtering apparatus comprises three magnetron cathodes. 9. The sputtering apparatus according to claim 7, wherein each of the magnetron cathodes comprises a plurality of targets and a number of magnet unit structures corresponding to the number of the targets. . 10. The magnetron cathode is provided with two targets on two outer surfaces facing each other, and the magnet unit structure is provided on both surfaces of one mounting member or one surface of the two mounting members, respectively. 9. The sputtering apparatus according to claim 7, wherein at least the protrusions at both ends are provided with a magnet unit set so as to correspond to an erosion region with respect to the edge portions of the two targets. 11. The magnetron cathode is provided with three targets on three outer surfaces respectively, and the magnet unit structure includes three mounting members, and the three main mounting surfaces of the three mounting members. 10. The sputtering apparatus according to claim 7, wherein a magnet unit set to correspond to an erosion region with respect to the target is provided on the protrusions at both ends. 12. The sputtering apparatus according to claim 1, which is a double-sided film forming type.