JP2003292346A5 - - Google Patents

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JP2003292346A5
JP2003292346A5 JP2003015513A JP2003015513A JP2003292346A5 JP 2003292346 A5 JP2003292346 A5 JP 2003292346A5 JP 2003015513 A JP2003015513 A JP 2003015513A JP 2003015513 A JP2003015513 A JP 2003015513A JP 2003292346 A5 JP2003292346 A5 JP 2003292346A5
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substrate
sized
flatness
substrate according
producing
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JP4267333B2 (en
JP2003292346A (en
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【0018】
従って、本発明は、以下の大型基板及びその製造方法を提供する。
(I)平坦度/対角長が6.0×10-6以下である対角長が500mm以上の大型基板、
(II)合成石英ガラス基板であることを特徴とする(I)記載の大型基板、
(III)大型基板が、大型フォトマスク用基板であることを特徴とする(I)又は(II)記載の大型基板、
(IV)大型基板が、TFT液晶のアレイ側基板であることを特徴とする(I)乃至(III)のいずれか1項記載の大型基板、
(V)予め対角長が500mm以上の大型基板の平坦度を大型基板を垂直保持して測定し、そのデータを基に基板の凸部分を加工ツールを用いて部分的に除去して、上記大型基板の平坦度を高めることを特徴とする大型基板の製造方法、
(VI)予め対角長が500mm以上の大型基板の平坦度及び平行度を大型基板を垂直保持して測定し、そのデータを基に基板の凸部分及び厚い部分を加工ツールにより部分的に除去して、上記大型基板の平坦度及び平行度を高めることを特徴とする大型基板の製造方法、
(VII)大型基板が、合成石英ガラス基板であることを特徴とする(V)又は(VI)記載の大型基板の製造方法、
(VIII)部分除去方法が、研削、ラップ及び研磨のいずれか1以上の方法であることを特徴とする(V)、(VI)又は(VII)記載の大型基板の製造方法、
(IX)前記研削、ラップ及び研磨のいずれか1以上の方法が定圧で行われることを特徴とする(VIII)記載の大型基板の製造方法、
(X)部分除去方法が、サンドブラストによることを特徴とする(V)、(VI)又は(VII)記載の大型基板の製造方法、
(XI)基板及び/又は加工ツールを移動させて、基板表面の任意の位置を除去することを特徴とする(V)乃至(X)のいずれか1項記載の大型基板の製造方法。
[0018]
Therefore, the present invention provides the following large-sized substrate and its manufacturing method.
(I) Large-sized substrate with a diagonal length of 500 mm or more, with flatness / diagonal length of 6.0 × 10 -6 or less,
(II) The large-sized substrate according to (I), which is a synthetic quartz glass substrate,
(III) The large-sized substrate according to (I) or (II), wherein the large-sized substrate is a large-sized photomask substrate.
(IV) The large-sized substrate according to any one of (I) to (III), wherein the large-sized substrate is an array side substrate of TFT liquid crystal,
(V) The flatness of a large substrate having a diagonal length of 500 mm or more is measured in advance by vertically holding the large substrate, and the convex portion of the substrate is partially removed using a processing tool based on the data, A method of manufacturing a large substrate characterized by enhancing the flatness of a large substrate,
(VI) The flatness and parallelism of a large substrate having a diagonal length of 500 mm or more are measured in advance by vertically holding the large substrate, and the convex and thick portions of the substrate are partially removed by a processing tool based on the data To increase the flatness and parallelism of the large substrate, and a method of manufacturing the large substrate,
(VII) The method for producing a large-sized substrate according to (V) or (VI), wherein the large-sized substrate is a synthetic quartz glass substrate,
(VIII) The method for producing a large substrate according to (V), (VI) or (VII), wherein the partial removal method is any one or more of grinding, lapping and polishing.
(IX) The method for producing a large-sized substrate according to (VIII), wherein any one or more of the grinding, lapping and polishing is carried out at a constant pressure,
(X) The method for producing a large substrate according to (V), (VI) or (VII), wherein the partial removal method is sandblasting,
(XI) The method for producing a large-sized substrate according to any one of (V) to (X), wherein the substrate and / or the processing tool is moved to remove any position on the substrate surface.

Claims (11)

平坦度/対角長が6.0×10-6以下である対角長が500mm以上の大型基板。Large substrate with a diagonal length of 500 mm or more, with flatness / diagonal length of 6.0 × 10 -6 or less. 合成石英ガラス基板であることを特徴とする請求項1記載の大型基板。The large-sized substrate according to claim 1, which is a synthetic quartz glass substrate. 大型基板が、大型フォトマスク用基板であることを特徴とする請求項1又は2記載の大型基板。The large substrate according to claim 1 or 2, wherein the large substrate is a substrate for a large photomask. 大型基板が、TFT液晶のアレイ側基板であることを特徴とする請求項1乃至3のいずれか1項記載の大型基板。The large substrate according to any one of claims 1 to 3, wherein the large substrate is an array side substrate of TFT liquid crystal. 予め対角長が500mm以上の大型基板の平坦度を大型基板を垂直保持して測定し、そのデータを基に基板の凸部分を加工ツールにより部分的に除去して、上記大型基板の平坦度を高めることを特徴とする大型基板の製造方法。The flatness of a large substrate having a diagonal length of 500 mm or more is measured in advance by vertically holding the large substrate, and the convex portion of the substrate is partially removed by a processing tool based on the data to obtain flatness of the large substrate. A method of manufacturing a large substrate, characterized in that 予め対角長が500mm以上の大型基板の平坦度及び平行度を大型基板を垂直保持して測定し、そのデータを基に基板の凸部分及び厚い部分を加工ツールにより部分的に除去して、上記大型基板の平坦度及び平行度を高めることを特徴とする大型基板の製造方法。The flatness and parallelism of a large substrate with a diagonal length of 500 mm or more are measured in advance by vertically holding the large substrate, and the convex and thick portions of the substrate are partially removed by a processing tool based on the data. A method of manufacturing a large-sized substrate characterized by enhancing the flatness and parallelism of the large-sized substrate. 大型基板が、合成石英ガラス基板であることを特徴とする請求項5又は6記載の大型基板の製造方法。The method for producing a large-sized substrate according to claim 5 or 6, wherein the large-sized substrate is a synthetic quartz glass substrate. 部分除去方法が、研削、ラップ及び研磨のいずれか1以上の方法であることを特徴とする請求項5、6又は7記載の大型基板の製造方法。The method for producing a large-sized substrate according to claim 5, 6 or 7, wherein the partial removal method is any one or more methods of grinding, lapping and polishing. 前記研削、ラップ及び研磨のいずれか1以上の方法が定圧で行われることを特徴とする請求項8記載の大型基板の製造方法。9. The method for producing a large-sized substrate according to claim 8, wherein any one or more of the grinding, lapping and polishing is performed at a constant pressure. 部分除去方法が、サンドブラストによることを特徴とする請求項5、6又は7記載の大型基板の製造方法。The method for producing a large substrate according to claim 5, 6, or 7, wherein the partial removal method is sandblasting. 基板及び/又は加工ツールを移動させて、基板表面の任意の位置を除去することを特徴とする請求項5乃至10のいずれか1項記載の大型基板の製造方法。The method for manufacturing a large-sized substrate according to any one of claims 5 to 10, wherein the substrate and / or the processing tool is moved to remove an arbitrary position on the substrate surface.
JP2003015513A 2002-01-31 2003-01-24 Manufacturing method of large synthetic quartz glass substrate Expired - Lifetime JP4267333B2 (en)

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JP2002023416 2002-01-31
JP2002-23416 2002-01-31
JP2003015513A JP4267333B2 (en) 2002-01-31 2003-01-24 Manufacturing method of large synthetic quartz glass substrate

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JP2004249820A Division JP4340893B2 (en) 2002-01-31 2004-08-30 Manufacturing method for large substrates

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JP2003292346A JP2003292346A (en) 2003-10-15
JP2003292346A5 true JP2003292346A5 (en) 2004-12-16
JP4267333B2 JP4267333B2 (en) 2009-05-27

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Publication number Priority date Publication date Assignee Title
DE602005001710T2 (en) 2004-02-18 2008-04-30 Shin-Etsu Chemical Co., Ltd. Method for preparing a large-area substrate
JP4362732B2 (en) 2005-06-17 2009-11-11 信越化学工業株式会社 Large glass substrate for photomask and manufacturing method thereof, computer-readable recording medium, and mother glass exposure method
US7608542B2 (en) 2005-06-17 2009-10-27 Shin-Etsu Chemical Co., Ltd. Large-size glass substrate for photomask and making method, computer-readable recording medium, and mother glass exposure method
JP2008151916A (en) 2006-12-15 2008-07-03 Shin Etsu Chem Co Ltd Method for recycling large-size photomask substrate
CN101681092B (en) * 2007-05-09 2012-07-25 株式会社尼康 Photomask substrate, photomask substrate forming member, photomask substrate manufacturing method, photomask, and exposure method using photomask
JP5584884B2 (en) * 2007-10-01 2014-09-10 シャープ株式会社 Glass substrate defect correction method, glass substrate manufacturing method
JP5365137B2 (en) * 2008-10-29 2013-12-11 東ソー株式会社 Photomask substrate and manufacturing method thereof
JP5526895B2 (en) * 2009-04-01 2014-06-18 信越化学工業株式会社 Manufacturing method of large synthetic quartz glass substrate
JP5578708B2 (en) * 2010-04-19 2014-08-27 Hoya株式会社 Reproduction photomask substrate production method for FPD production, reproduction photomask blank production method, reproduction photomask production method with pellicle, and pattern transfer method
JP5937409B2 (en) * 2011-04-13 2016-06-22 Hoya株式会社 Photomask substrate, photomask, photomask manufacturing method, and pattern transfer method
CN112338644A (en) * 2020-10-30 2021-02-09 江苏汇鼎光学眼镜有限公司 Lens surface treatment process

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