JP2005300566A - Substrate for photomask, photomask blank and photomask - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a substrate for a large sized photomask of which the production of particles from a side face part is reduced and the handling of the side face part is hardly bothered with slipperiness. <P>SOLUTION: The substrate for the photomask is a transparent substrate for the photomask, which has principal surfaces comprising a top surface and a back surface, end surfaces T formed along the thickness thereof and chamfered surfaces C formed between the end surface T and the top surface and the back surface, wherein sizes of the principal surfaces of the substrate are 300 mm or more on sides L and the end surface T and the chamfered surface C are roughened surfaces having surface roughness (Ra) ranging from 0.03 to 0.3 μm. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a large photomask substrate used for pattern transfer in a lithography technique for manufacturing a display device.

A photomask is known as having a light shielding film pattern formed on a translucent substrate. The substrate used for this photomask is a substrate having a quadrilateral surface shape made of synthetic quartz glass or the like, but its surface is mirror-polished in consideration of light scattering when using the photomask. It is common. In addition, in order to prevent the dust present in the polishing grooves remaining on the side surface from adhering to the surface during photomask manufacturing and causing a foreign matter defect, the side surface of the substrate (end surface and chamfered surface) Is disclosed in Patent Document 1.
JP 56-46227 A

By the way, for photomasks, for example, when manufacturing display devices such as photomasks (reticles) used for pattern transfer using a reduction projection exposure apparatus (stepper) in semiconductor manufacturing, TFT arrays for liquid crystal displays, and the like. There are photomasks and the like used for pattern transfer using a mask aligner which is an exposure apparatus using a unitary batch exposure method. The size of the photomask differs between the photomask for the stepper and the photomask for the mask aligner. A photomask for a stepper is generally a 5 inch square or a 6 inch square, but in the case of a mask aligner photomask, a rectangular shape is generally used based on the monitor and TV display screen size. And this type of photomask tends to increase the size of the substrate due to the increase in the area of the display screen and the requirement to manufacture a large number of screens at once.
In a photomask for manufacturing a semiconductor, as described in Patent Document 1, it has been put into practical use that a side surface portion of a substrate is mirror-polished. However, in a large-sized photomask for a display device, there is no particular requirement for the side portion to be a mirror surface, and the actual situation is that the side portion remains rough. Furthermore, there is an example in which the photomask is detected on the side surface of the substrate by the mask aligner. In that case, there is a problem that the reflected light cannot be detected if the side surface of the substrate is a mirror surface. It was hoped to do.

However, in recent years, pattern miniaturization and high precision have been advanced in photomasks for display devices, and it has become necessary to more strictly manage foreign matter defects adhering to the photomask during the manufacturing process.
For example, as shown in FIG. 2, the end surface (T surface) and the chamfered surface (C surface) are polished by rotating a diamond tool having an appropriate roughness as shown in FIG. There is a polishing groove. Particles 2 potentially accumulate in the polishing groove 1 and are gradually discharged by cleaning, so that the particle 2 'adheres to the surface of the photomask. The situation is that a photomask cannot be obtained (see FIG. 3).
Furthermore, since most of the holding jigs such as a photomask storage jig and a cleaning device support the side surface portion of the substrate, the side surface portion having a rough surface comes into contact with the jig, so that the jig is There is also a problem that dust is generated by cutting.
Therefore, it is conceivable to make the side surface of the substrate a mirror surface even in the above-described large photomask. However, photomasks are usually handled and handled by hand during the manufacture and use, but as the size increases, the weight of the substrate increases (about 1 kg to 15 kg). Handling must be done very carefully. Under such circumstances, if the side part is made into a mirror surface, the side part is very slippery, and the risk of dropping the photomask during handling increases, making it impossible to handle the photomask safely. There was a problem.
The present invention has been made in view of the above problems, and an object of the present invention is to obtain a large photomask substrate that reduces the generation of particles from the side surface portion and is difficult to slip when handling the side surface portion. .

The present invention has the following configuration.
(Configuration 1) A translucent photomask substrate having a main surface composed of a front surface and a back surface, an end surface formed in the thickness direction, and a chamfered surface formed between the end surface and the front surface and the back surface. In
The substrate has a main surface size of 300 mm or more on one side,
The end face and the chamfered surface are rough surfaces having a surface roughness (Ra) of 0.03 to 0.3 μm.
(Configuration 2) The photomask substrate according to Configuration 2, wherein the end surface and the chamfered surface are rough surfaces having a surface roughness (Ra) of 0.05 to 0.3 μm.
(Configuration 3) A translucent photomask substrate having a main surface composed of a front surface and a back surface, an end surface formed in the thickness direction, and a chamfered surface formed between the end surface and the front surface and the back surface. In
The size of the main surface of the substrate is 300 mm or more on a side, and the end surface and the chamfered surface are rough surfaces polished using a polishing jig having a particle size of # 700 to # 2400. Photomask substrate.
(Configuration 4) A translucent photomask substrate having a main surface composed of a front surface and a back surface, an end surface formed in the plate thickness direction, and a chamfered surface formed between the end surface and the front surface and the back surface. In
The substrate has a main surface size of 300 mm or more on one side,
A photomask substrate, wherein the end surface is a rough surface and the chamfered surface is a surface having a surface roughness smaller than that of the end surface.
(Structure 5) The photomask substrate according to Structure 4, wherein the end face has a surface roughness (Ra) of 0.05 μm or more.
(Structure 6) A photomask blank, comprising a light-shielding film on the surface of the photomask substrate according to one item selected from Structures 1 to 5.
(Structure 7) A photomask having a light-shielding film pattern on the surface of the photomask substrate according to one of the structures 1 to 5, which is selected from the structures 1 to 5.

  According to the present invention, it is possible to obtain a large photomask substrate that is difficult to slip when handling the side surface portion and that effectively reduces the generation of particles from the side surface portion according to various cleaning methods.

FIG. 1A is a side view of a large photomask substrate, FIG. 1B is a plan view of the large photomask substrate, and FIG. 3B is a partial enlarged view of a side portion of the large photomask substrate.
In the present invention, a large photomask means a rectangular substrate or a square substrate having one side (L) (preferably each side) of 300 mm or more. In the case of a rectangular substrate, the short side is 300 mm or more. Specifically, there are 330 × 450 mm, 390 × 610 mm, 500 × 750 mm, 520 × 800 mm, or more.
Note that the present invention is more effective for a larger photomask having all four sides of 300 mm or more.
In the large photomask, the thickness b is approximately 5 to 15 mm, and the width a of the chamfered surface (C surface) is 0.3 to 1.3 mm.

(Embodiment 1)
In the first embodiment, the chamfered surface (C surface) and the end surface (T surface) constituting the side surface portion of the large photomask substrate extend over the entire circumference of the substrate, and the surface roughness (Ra) is 0.03 to 0. It is an example of a large photomask substrate having a rough surface of 3 μm.
Here, if the surface roughness (Ra) of the C plane and the T plane is less than 0.03, it is slippery and very dangerous when held by hand. Further, when the surface roughness (Ra) of the C surface and the T surface is larger than 0.3, the generation of particles by the side surface portions is remarkable.
The preferable lower limit of the surface roughness (Ra) of the C plane and the T plane is preferably 0.05 μm or more, more preferably 0.1 μm or more, and further preferably 0.15 μm or more. The upper limit with preferable surface roughness (Ra) of C surface and T surface is 0.25 micrometer or less, and 0.2 micrometer or less is more preferable.
In other words, in the present invention, the “surface having a surface roughness (Ra) of 0.03 to 0.3 μm” on the side surface portion means that the generation of particles from the side surface portion is reduced and the side surface portion is handled. A rough surface having a predetermined surface roughness capable of effectively exhibiting both effects of being able to be made slippery. In addition, the rough surface said here is a surface rougher than the mirror surface of 0.01 micrometer or less normally, and a quasi-mirror surface (about 0.03-0.1 micrometer) is also included. From the viewpoint of handling, a ground glass-like (translucent) surface larger than 0.1 μm is preferable, but from the viewpoint of generation of particles, a quasi-mirror surface is preferable.

Next, an example of manufacturing a large photomask substrate according to the first embodiment will be described.
In order to obtain the rough surface in the predetermined range, a method of polishing by using a polishing jig having a particle size of # 700 to # 2400 and appropriately adjusting conditions such as the particle size can be applied. Examples of such a polishing jig include a diamond tool (a wheel-shaped polishing grindstone in which diamond particles having a predetermined roughness are embedded).
When a polishing jig having a particle size of # 700 or more is used, Ra ≦ 0.3 μm can be obtained.
When a polishing jig having a particle size of # 2400 or less is used, Ra ≧ 0.03 μm can be obtained.
It is more preferable to use a polishing jig having a particle size of # 800 to # 1000.
The polishing method for obtaining the rough surface in the predetermined range may be a polishing method using an abrasive and a polishing pad or a polishing brush. When this polishing method is used, even if the surface roughness is the same as that using a diamond tool, the curved surface constituting the polishing groove becomes gentle, and particles accumulated in the polishing groove can be reduced, which is preferable.

(Example 1 according to Embodiment 1)
The side portions (C surface and T surface) of the photomask substrate were polished with a diamond tool having a particle size of # 800 over the entire periphery of the substrate. As a result, the side surfaces (C surface and T surface) were finished to a rough surface with Ra of 0.2 μm. This surface is a translucent surface that is not transparent when viewed. Here, the surface roughness Ra was measured on a line of about 10 mm at an arbitrary location on the side surface.
The photomask blank having a light shielding film formed on the substrate was subjected to dip cleaning. Thereafter, when the foreign matter inspection on the surface of the photomask blank after the cleaning was performed, particles that seemed to be generated from the side surface portion of the substrate were hardly detected.
Further, this substrate could be handled manually without any problem.

(Embodiment 2)
In the second embodiment, the chamfered surface (C surface) and the end surface (T surface) constituting the side surface portion of the large photomask substrate extend over the entire circumference of the substrate, the end surface T is a rough surface, and the chamfered surface C is It is an example of the board | substrate for large sized photomasks made into the surface where surface roughness is smaller than an end surface.
Here, by making the chamfered surface C a surface having a surface roughness smaller than that of the end surface, there are the following advantages.
First, in the cleaning of a substrate, photomask blank, and photomask, (1) In addition to so-called dip cleaning in which the substrate is immersed in a cleaning solution and (2) so-called spin cleaning in which the substrate is rotated while supplying the cleaning solution. (3) There is so-called scrub cleaning in which the surface of the substrate is rubbed while contacting a cleaning jig such as a sponge or brush. In scrub cleaning, the entire surface of the substrate is rubbed while moving the substrate and / or the cleaning jig. At that time, the cleaning jig comes into contact with the C surface. (See FIG. 4). Therefore, by making the C surface a surface having a surface roughness smaller than that of the end surface, the number of polishing grooves on the C surface is smaller than that of the T surface, thereby significantly reducing particles generated from the C surface in scrub cleaning. It is possible to reduce particles generated from the side portion.
Second, when the substrate is supported by a side surface of the substrate when the substrate is supported by a holding jig or the like such as a photomask storage jig or a cleaning device, the C surface is often in contact (see FIG. 5). In particular, when the substrate is set, since the C surface is often slid on the guide, the jig is often rubbed by the C surface. Therefore, by making the C surface a surface having a surface roughness smaller than that of the end surface, it is possible to significantly reduce dust generated from the side surface portion.
Here, it is desirable that the surface having a surface roughness smaller than that of the end surface is such that there is substantially no polishing groove. Specifically, the surface roughness (Ra) of the chamfered surface (C surface) is preferably a mirror surface or quasi-mirror surface of less than 0.1 μm, more preferably 0.05 μm.
In the second embodiment, by making the end surface T rough, it becomes difficult to slip and can be handled safely. In addition, the end face T has little contact with a cleaning jig (sponge, brush, etc.) in scrub cleaning, so that there is little risk that dust causing particles will be swept out of the polishing groove. It doesn't matter so much.
Here, the degree of roughness (lower limit) of the end face T is preferably such that the surface roughness (Ra) is greater than 0.05 μm, more preferably a ground glass (translucent) surface of 0.1 μm or more, and More preferably, it is 15 μm or more.
Incidentally, the degree of roughness (upper limit) of the end face T may be such that the surface roughness (Ra) is larger than 0.3 μm, but is preferably 0.3 μm or less so that it can be removed from the end face by dipping or the like. Generation of particles can be prevented. As for the degree (upper limit) of the rough surface of the end face T, the surface roughness (Ra) is preferably 0.25 μm or less, and more preferably 0.2 μm or less.

Next, according to the second embodiment, “the C surface and the T surface constituting the side surface portion of the large photomask substrate are extended over the entire circumference of the substrate, the end surface T is a rough surface, and the chamfered surface C is formed from the end surface. An example of a manufacturing method of “a large photomask substrate having a surface with a small surface roughness” will be described.
As an example of the manufacturing method, a method of polishing using a diamond tool or the like separately or together so that the C surface and the T surface have different roughness can be applied.
In addition, it is good also as the grinding | polishing method using an abrasive | polishing agent and a grinding | polishing jig (a grinding | polishing pad or a grinding | polishing brush etc.) only for C surface mirror polishing. When this polishing method is used, even if the surface roughness is the same as that using a diamond tool, the curved surface constituting the polishing groove becomes gentle, and particles accumulated in the polishing groove can be reduced, which is preferable.

(Example 2 according to Embodiment 2)
The side portions (C surface and T surface) of the photomask substrate were polished with a diamond tool having a roughness of # 400. As a result, each of the side surfaces (C surface and T surface) was finished into a rough surface with Ra of 0.4 μm. This surface is a translucent surface that is not transparent when viewed.
Next, the C surface was mirror-finished using a # 2400 diamond tool in which only the C surface was polished. The C surface is a transparent surface when visually observed. The surface roughness (Ra) of the C surface was a mirror surface smaller than 0.05 μm. The surface roughness Ra was measured in the same manner as in Example 1 according to Embodiment 1.
The photomask blank having the light shielding film formed on the substrate was scrubbed. Thereafter, when the foreign matter inspection on the surface of the photomask blank after the cleaning was performed, particles that seemed to be generated from the side surface portion of the substrate were hardly detected.
In addition, since this substrate has a rough T surface, it can be handled manually without any particular problem.

(Comparative Example 1)
The side portions (C surface and T surface) of the photomask substrate were polished with a diamond tool having a roughness of # 400. As a result, each of the side surfaces (C surface and T surface) was finished into a rough surface with Ra of 0.4 μm.
This substrate was subjected to dip cleaning. Thereafter, when a foreign matter inspection was performed on the surface of the photomask blank after the cleaning, many particles that appeared to be generated from the side surface of the substrate were present. And even if washing | cleaning was repeated 8 times or more, the number of particles did not reduce to the predetermined range. The result of scrub cleaning this substrate was also the same, and the number of particles did not decrease to a predetermined range even after many cleanings.

1 (1) is a side view of a large photomask substrate, FIG. 1 (2) is a plan view of the large photomask substrate, and FIG. 1 (3) is a partially enlarged view of a side portion of the large photomask substrate. is there. It is a figure for demonstrating the grinding | polishing method to which the diamond tool which can grind | polishes an end surface (T surface) and a chamfering surface (C surface) simultaneously is applied. It is a figure for demonstrating a mode that a particle | grain generate | occur | produces from the grinding | polishing groove | channel formed with the diamond tool of FIG. It is a figure for demonstrating that the foreign material which exists potentially in C surface by a contact with C surface and a cleaning jig becomes a problem especially in scrub cleaning. It is a figure for demonstrating the state etc. which set the photomask to the storage jig, FIG.5 (1) is a side view, FIG.5 (2) is the elements on larger scale of FIG.5 (1). It is a figure for demonstrating the grinding | polishing method to which the diamond tool with which only the C surface used in Embodiment 2 is grind | polished is applied.

Explanation of symbols

1 Polishing groove 2 Particle 2 'particle T face End face C face Chamfer

Claims (7)

In a translucent photomask substrate having a main surface composed of a front surface and a back surface, an end surface formed in the plate thickness direction, and a chamfered surface formed between the end surface and the front surface and the back surface,
The substrate has a main surface size of 300 mm or more on a side, and the end surface and the chamfered surface are rough surfaces having a surface roughness (Ra) of 0.03 to 0.3 μm. Mask substrate. 3. The photomask substrate according to claim 2, wherein the end surface and the chamfered surface are rough surfaces having a surface roughness (Ra) of 0.05 to 0.3 μm. In a translucent photomask substrate having a main surface composed of a front surface and a back surface, an end surface formed in the plate thickness direction, and a chamfered surface formed between the end surface and the front surface and the back surface,
The substrate has a main surface size of 300 mm or more on one side,
The end face and the chamfered surface are rough surfaces polished using a polishing jig having a particle size of # 700 to # 2400. In a translucent photomask substrate having a main surface composed of a front surface and a back surface, an end surface formed in the plate thickness direction, and a chamfered surface formed between the end surface and the front surface and the back surface,
The substrate has a main surface size of 300 mm or more on one side,
A photomask substrate, wherein the end surface is a rough surface and the chamfered surface is a surface having a surface roughness smaller than that of the end surface. The photomask substrate according to claim 4, wherein the end face has a surface roughness (Ra) of 0.05 μm or more. A photomask blank comprising a light-shielding film on a surface of the photomask substrate according to claim 1 selected from claims 1 to 5. A photomask having a light-shielding film pattern on a surface of the photomask substrate according to claim 1, which is selected from claims 1 to 5.

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