JP2003285069A - Fluid cleaning device - Google Patents
Fluid cleaning deviceInfo
- Publication number
- JP2003285069A JP2003285069A JP2002091498A JP2002091498A JP2003285069A JP 2003285069 A JP2003285069 A JP 2003285069A JP 2002091498 A JP2002091498 A JP 2002091498A JP 2002091498 A JP2002091498 A JP 2002091498A JP 2003285069 A JP2003285069 A JP 2003285069A
- Authority
- JP
- Japan
- Prior art keywords
- photocatalyst
- mixed
- fluid
- substance
- purifying apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012530 fluid Substances 0.000 title claims abstract description 37
- 238000004140 cleaning Methods 0.000 title abstract description 6
- 239000011941 photocatalyst Substances 0.000 claims abstract description 155
- 230000001699 photocatalysis Effects 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 34
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 23
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 36
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 24
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 19
- 239000004020 conductor Substances 0.000 claims description 17
- 238000000746 purification Methods 0.000 claims description 16
- 239000000843 powder Substances 0.000 claims description 14
- 239000002253 acid Substances 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 6
- 238000007146 photocatalysis Methods 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 238000004220 aggregation Methods 0.000 claims description 2
- 230000002776 aggregation Effects 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 11
- 150000004706 metal oxides Chemical class 0.000 abstract description 11
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000013032 photocatalytic reaction Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910018104 Ni-P Inorganic materials 0.000 description 4
- 229910018536 Ni—P Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- -1 For example Chemical compound 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 150000003568 thioethers Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- 229910000963 austenitic stainless steel Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000006864 oxidative decomposition reaction Methods 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Landscapes
- Disinfection, Sterilisation Or Deodorisation Of Air (AREA)
- Treatment Of Water By Oxidation Or Reduction (AREA)
- Water Treatment By Electricity Or Magnetism (AREA)
- Exhaust Gas Treatment By Means Of Catalyst (AREA)
- Catalysts (AREA)
- Physical Water Treatments (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光触媒半導体を利
用し、気体や液体（流体という）中に浮遊している有機
化合物または無機化合物を除去する光触媒体を用いた流
体浄化装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fluid purification device that uses a photocatalytic semiconductor and uses a photocatalyst that removes an organic compound or an inorganic compound suspended in a gas or a liquid (referred to as a fluid).
【０００２】[0002]
【従来の技術】近年、光触媒を用いて空気、みずの浄
化、抗菌等の検討がされている。そして、光触媒を組み
込む方法として支持体上に光触媒の膜を形成することが
行われているが、この光触媒膜上に種々の付着物が固
し、光の遮断や表面の被覆により光触媒性能を妨げるこ
とがある。特に光触媒作用では分解できない金属化合物
は一度、付着すると、除去することが困難で、この金属
化合物を除去するためには酸等で溶解、剥離させる以外
方法を持たなかった2. Description of the Related Art In recent years, studies have been made on the purification of air, water, antibacterial activity, etc. using a photocatalyst. Then, as a method of incorporating the photocatalyst, a photocatalyst film is formed on the support, but various kinds of deposits are solidified on the photocatalyst film, and the photocatalytic performance is hindered by blocking light or coating the surface. Sometimes. In particular, metal compounds that cannot be decomposed by photocatalysis are difficult to remove once attached, and there is no method other than dissolving and peeling with an acid to remove this metal compound.
【０００３】光触媒の性能を改善した光触媒膜が特開平
８−２６６９０４号公報にて提案されている。この光触
媒膜は、支持体上に形成している光触媒性を有する複合
膜であって、支持体と接する側に金属よりなる電極膜を
形成し、この電極膜の表面に光触媒膜を形成している光
触媒性を有する複合膜である。また、この光触媒膜は、
支持体と接する側に形成している電極膜に例えば金線等
からなるアース部を接続することも可能である。電極膜
をアースすることで、電極膜に蓄積された電子を逃がす
ことができ、高い光触媒活性を維持することが可能にな
るとしている。しかし、この光触媒膜では、光触媒活性
を高めることが目的であって、表面に付着する光触媒で
は分解できない金属イオンや金属酸化物を除去すること
には効果がない。A photocatalytic film having improved photocatalytic performance has been proposed in Japanese Patent Laid-Open No. 8-266904. This photocatalytic film is a composite film having a photocatalytic property formed on a support, in which an electrode film made of metal is formed on the side in contact with the support, and the photocatalytic film is formed on the surface of this electrode film. It is a composite film having photocatalytic properties. Also, this photocatalytic film is
It is also possible to connect a ground portion made of, for example, a gold wire to the electrode film formed on the side in contact with the support. By grounding the electrode film, electrons accumulated in the electrode film can be released, and high photocatalytic activity can be maintained. However, the purpose of this photocatalyst film is to increase the photocatalytic activity, and it is not effective to remove metal ions and metal oxides that cannot be decomposed by the photocatalyst adhering to the surface.
【０００４】同様に光触媒の性能を改善する目的で電圧
を印加したものに特開平１１−１２８７５０号公報の光
触媒効果促進システムや特開２０００−３１７３１２号
公報の光触媒反応方法がある。これは基板上に導電膜を
形成し、その上に光触媒を成膜して導電膜に電圧をか
け、励起電子を分離し、光触媒内のホールと電子の再結
合を起きにくくすることで光触媒の効果、特にホールの
強い酸化力を促進させるものである。しかしながら先の
特開平８−２６６９０４号公報と同様に光触媒活性を高
めることが目的であって、表面に付着する光触媒では分
解できない金属イオンや金属酸化物を除去することには
効果がなく、また、光触媒を担持する導電膜には正極が
接続される。Similarly, a photocatalytic effect promoting system disclosed in Japanese Patent Laid-Open No. 11-128750 and a photocatalytic reaction method disclosed in Japanese Patent Laid-Open No. 2000-317312 are used for applying a voltage for the purpose of improving the performance of the photocatalyst. This is because the conductive film is formed on the substrate, the photocatalyst is formed on the film, a voltage is applied to the conductive film, the excited electrons are separated, and recombination of holes and electrons in the photocatalyst is less likely to occur. It promotes the effect, especially the strong oxidizing power of holes. However, the purpose is to increase the photocatalytic activity as in the above-mentioned JP-A-8-266904, and there is no effect in removing metal ions and metal oxides that cannot be decomposed by the photocatalyst adhering to the surface, and A positive electrode is connected to the conductive film carrying the photocatalyst.
【０００５】[0005]
【発明が解決しようとする課題】光触媒を金属イオンを
含む水中で使用した場合、金属イオンが光触媒表面に析
出し、析出した金属は光触媒の酸化作用により酸化され
て金属酸化物となる。この現象が発生すると光触媒表面
が金属酸化物で覆われてしまうため光触媒に光が当たら
なくなり水浄化の目的の光触媒機能が著しく劣化する。When the photocatalyst is used in water containing metal ions, the metal ions are deposited on the surface of the photocatalyst, and the deposited metal is oxidized by the oxidizing action of the photocatalyst to become a metal oxide. When this phenomenon occurs, the surface of the photocatalyst is covered with the metal oxide, so that the photocatalyst is not exposed to light and the photocatalytic function for water purification is significantly deteriorated.
【０００６】この劣化についての対策は表面に付着した
金属酸化物を酸洗いなどの手段により除去する以外には
方法がない。しかしながら、酸洗浄は取り扱いが危険で
ある。また、金属酸化物の析出は容易に発生するため光
触媒性能はすぐに劣化を始めるので、酸洗浄は定期的か
つ比較的頻繁に行わなければならない。別の対策として
光触媒性能の低下が所定の程度を超えたら、光触媒表面
を研磨して付着した金属酸化物を除去する方法もある。
しかし、この方法は多くの手間を必要とするだけでなく
光触媒自体を消耗してしまう為に実用的ではない。There is no other countermeasure against this deterioration than removing the metal oxide adhering to the surface by means such as pickling. However, acid cleaning is dangerous to handle. In addition, since the precipitation of metal oxides easily occurs and the photocatalytic performance immediately begins to deteriorate, the acid cleaning must be performed regularly and relatively frequently. As another measure, there is also a method of polishing the photocatalyst surface to remove the adhered metal oxide when the deterioration of the photocatalytic performance exceeds a predetermined level.
However, this method is not practical because it not only requires a lot of trouble but also consumes the photocatalyst itself.
【０００７】本発明の目的は、上記の問題点を解決し、
光触媒表面での金属酸化物の析出を抑制することのでき
る流体浄化装置を提供することである。The object of the present invention is to solve the above problems,
An object of the present invention is to provide a fluid purification device capable of suppressing the deposition of metal oxides on the surface of a photocatalyst.
【０００８】[0008]
【課題を解決するための手段】本発明は、光触媒の酸化
および／または還元作用を利用する流体浄化装置であっ
て、光触媒表面に光触媒作用を阻害する金属イオンの極
性と同極性の電位を印加することを特徴とする流体浄化
装置である。The present invention is a fluid purification apparatus utilizing the oxidation and / or reduction action of a photocatalyst, in which a potential having the same polarity as the polarity of a metal ion which inhibits the photocatalysis is applied to the surface of the photocatalyst. The fluid purification device is characterized in that
【０００９】本発明では、光触媒が導電性の金属基板に
固定されていることが好ましい。その理由は次の通りで
ある。すなわち、光触媒膜と基板の間に導電層を設ける
と、導電層の材質、膜厚によっては電圧破壊が発生し、
高い電圧を印加できないことがある。また、導電膜と光
触媒膜の間に電気二重層が形成されることもあり、印加
する電圧の減少や反転が発生することがある。In the present invention, the photocatalyst is preferably fixed on a conductive metal substrate. The reason is as follows. That is, when a conductive layer is provided between the photocatalyst film and the substrate, voltage breakdown occurs depending on the material and film thickness of the conductive layer,
In some cases, a high voltage cannot be applied. In addition, an electric double layer may be formed between the conductive film and the photocatalyst film, and the applied voltage may be reduced or inverted.
【００１０】本発明では、光触媒がペルオキソチタン酸
水溶液とアナターゼ型酸化チタンゾルの混合溶液から生
成されることが好ましい。その理由は次の通りである。
すなわち、ペルオキソチタン酸水溶液を用いることで、
光触媒膜と金属基板との密着性が向上し、金属基板上に
強固な光触媒酸化チタン膜を形成することが出来る。こ
れはペルオキソチタン酸が酸化チタンの前駆体であり、
過剰な酸素も有していることから、金属基板表面で酸化
反応を引き起こしながら、酸化チタンに変化するためで
ある。また、ペルオキソチタン酸水溶液だけでは光触媒
性能が不充分であることも判明しているために、アナタ
ーゼ型酸化チタンゾルを混合し、光触媒活性を向上させ
ることができる。In the present invention, the photocatalyst is preferably produced from a mixed solution of an aqueous solution of peroxotitanic acid and anatase type titanium oxide sol. The reason is as follows.
That is, by using an aqueous solution of peroxotitanic acid,
The adhesion between the photocatalytic film and the metal substrate is improved, and a strong photocatalytic titanium oxide film can be formed on the metal substrate. This is because peroxotitanic acid is the precursor of titanium oxide,
This is because it also has an excess of oxygen and changes into titanium oxide while causing an oxidation reaction on the surface of the metal substrate. Further, since it has been found that the photocatalytic performance is insufficient only with the aqueous peroxotitanic acid solution, the photocatalytic activity can be improved by mixing the anatase type titanium oxide sol.
【００１１】本発明では、光触媒が金属基板上に固定さ
れており、２００〜４５０℃で熱処理されていることが
好ましい。その理由は次の通りである。すなわち、ペル
オキソチタン酸水溶液とアナターゼ型酸化チタンの混合
溶液は、常温でも光触媒性能を有しているが、ペルオキ
ソチタン酸水溶液は乾燥させただけでは非晶質であり、
光触媒活性を有していない。このペルオキソチタン酸水
溶液は酸化チタンの前駆体であり、加熱することで、脱
酸、アモルファス化、結晶化が起こり、純粋なアナター
ゼ型酸化チタンへと変化する。好ましくは３００〜４５
０℃で加熱することが好ましい。また、４５０℃以上で
加熱した場合はアナターゼ型酸化チタンの一部が光触媒
活性の低いルチル型酸化チタンに転移し始めるために、
４５０℃以上の加熱は好ましくない。In the present invention, the photocatalyst is preferably fixed on a metal substrate and heat-treated at 200 to 450 ° C. The reason is as follows. That is, the mixed solution of the peroxotitanic acid aqueous solution and the anatase-type titanium oxide has photocatalytic performance even at room temperature, but the peroxotitanic acid aqueous solution is amorphous only by drying,
It has no photocatalytic activity. This aqueous peroxotitanic acid solution is a precursor of titanium oxide, and when heated, it undergoes deoxidation, amorphization, and crystallization, and is transformed into pure anatase-type titanium oxide. Preferably 300-45
It is preferable to heat at 0 ° C. When heated at 450 ° C. or higher, part of the anatase-type titanium oxide starts to transfer to rutile-type titanium oxide having low photocatalytic activity.
Heating above 450 ° C is not preferred.
【００１２】本発明では、光触媒に印加する電圧を光触
媒膜の破壊電圧以下にすることが好ましい。In the present invention, it is preferable that the voltage applied to the photocatalyst is equal to or lower than the breakdown voltage of the photocatalyst film.
【００１３】本発明では、光触媒に印加する直流電圧に
交流電圧を重畳することが好ましい。その理由は次の通
りである。すなわち、直流電流だけでは光触媒表面に一
度ついてしまった金属イオンを脱離させることは不可能
である。そのために、電圧的に振動している交流電圧を
重畳させることにより、付着してしまった金属イオンを
水中に脱離させることが可能となる。In the present invention, it is preferable to superimpose an AC voltage on the DC voltage applied to the photocatalyst. The reason is as follows. That is, it is impossible to desorb the metal ions once attached to the surface of the photocatalyst only by the direct current. Therefore, it is possible to desorb the adhered metal ions into water by superimposing an alternating voltage that vibrates in terms of voltage.
【００１４】本発明では、電圧を印加する光触媒におい
て、光触媒に電流が流れないようにすることが好まし
い。その理由は次の通りである。すなわち、光触媒に電
流が流れると電圧の大きさにより半導体で抵抗の大きな
酸化チタンの光触媒膜は短絡により破壊されることがあ
る。また、電流を流すと場合によっては光触媒活性に影
響を与えて、光触媒による酸化分解は阻害されることが
ある。また、光触媒表面から電流が水中に流れだし、思
わぬ事故を起こす恐れがあり、それを防ぐためには光触
媒が入った水の容器を絶縁させる必要があり、装置自体
が複雑になる。In the present invention, in the photocatalyst to which a voltage is applied, it is preferable that no current flows in the photocatalyst. The reason is as follows. That is, when a current flows through the photocatalyst, the titanium oxide photocatalyst film, which has a large resistance in the semiconductor, may be destroyed by a short circuit due to the magnitude of the voltage. In addition, when a current is applied, the photocatalytic activity may be affected in some cases, and oxidative decomposition by the photocatalyst may be hindered. In addition, an electric current may flow into the water from the surface of the photocatalyst, which may cause an unexpected accident. To prevent this, it is necessary to insulate the water container containing the photocatalyst, which complicates the apparatus itself.
【００１５】本発明では、電圧を印加する光触媒におい
て、光触媒基板が網状の形態をしていることが好まし
い。In the present invention, in the photocatalyst to which a voltage is applied, it is preferable that the photocatalyst substrate has a net shape.
【００１６】本発明では、電圧を印加する光触媒におい
て、光触媒基板上に金属粉末を焼結してあることが好ま
しい。In the present invention, in the photocatalyst to which a voltage is applied, it is preferable that metal powder is sintered on the photocatalyst substrate.
【００１７】本発明では、電圧を印加する光触媒におい
て、光触媒基板上に異形の金属粉末を焼結してあること
が好ましい。その理由は次の通りである。すなわち、光
触媒の反応は表面反応であり、表面積が大きいほど光触
媒反応は大きくなる。異形の粉末を基板上に焼結するこ
とにより、表面積を大きくし、光触媒反応を向上させる
ことができる。In the present invention, in the photocatalyst to which a voltage is applied, it is preferable that odd-shaped metal powder is sintered on the photocatalyst substrate. The reason is as follows. That is, the photocatalytic reaction is a surface reaction, and the larger the surface area, the greater the photocatalytic reaction. By sintering the irregularly shaped powder on the substrate, the surface area can be increased and the photocatalytic reaction can be improved.
【００１８】本発明では、電圧を印加する光触媒におい
て、光触媒基板が水中でも腐食しない金属で形成されて
いることが好ましい。In the present invention, in the photocatalyst to which a voltage is applied, the photocatalyst substrate is preferably formed of a metal that does not corrode in water.
【００１９】本発明では、電圧を印加する光触媒の膜層
の中に導電性物質を混合することが好ましい。その理由
は次の通りである。すなわち、光触媒である酸化チタン
は半導体ではあるが、抵抗が高く、厚膜で作製した場
合、電圧を掛けても酸化チタン表面に電圧が印加できな
い場合がある。そこで導電性物質を混合することによ
り、酸化チタン膜自体の抵抗を下げて、大きな電圧を印
加しなくても酸化チタン膜表面に電圧が印加できるよう
にする。本発明で使用できる導電性物質は、Ｎｉ−Ｐ，
白金，金などの貴金属元素，タングステン，ロジウム，
インジウムなどである。In the present invention, it is preferable to mix a conductive substance in the photocatalyst film layer to which a voltage is applied. The reason is as follows. That is, although titanium oxide, which is a photocatalyst, is a semiconductor, it has a high resistance, and when a thick film is used, a voltage may not be applied to the titanium oxide surface even if a voltage is applied. Therefore, by mixing a conductive material, the resistance of the titanium oxide film itself is lowered so that a voltage can be applied to the surface of the titanium oxide film without applying a large voltage. The conductive material that can be used in the present invention is Ni-P,
Noble metal elements such as platinum and gold, tungsten, rhodium,
For example, indium.
【００２０】本発明では、導電性物質を混合する光触媒
において、導電性物質は粉末状であることが好ましい。In the present invention, in the photocatalyst in which the electroconductive substance is mixed, the electroconductive substance is preferably in powder form.
【００２１】本発明では、導電性物質を混合する光触媒
において、光触媒に混合する導電性物質は金属粉末であ
ることが好ましい。In the present invention, in the photocatalyst mixed with a conductive substance, the conductive substance mixed with the photocatalyst is preferably a metal powder.
【００２２】本発明では、導電性物質を混合する光触媒
において、光触媒に混合する導電性物質の形状が球形で
あることが好ましい。その理由は次の通りである。すな
わち、異形の針状であったり角が多い形状のものでは、
その先端に電圧が集中してしまい、光触媒表面に電圧の
分布が出来てしまう。そのため、場合によっては金属イ
オンが逆に付着してしまう箇所が生じてしまい不具合と
なる。In the present invention, in the photocatalyst mixed with the electroconductive substance, it is preferable that the electroconductive substance mixed with the photocatalyst has a spherical shape. The reason is as follows. That is, in the case of a deformed needle shape or a shape with many corners,
The voltage is concentrated on the tip, and the voltage is distributed on the surface of the photocatalyst. Therefore, in some cases, there may be a place where the metal ions are conversely attached, which is a problem.
【００２３】本発明では、導電性物質を混合する光触媒
において、光触媒に混合する導電性物質の粒径が金属基
板上に形成される光触媒膜厚より小さいことが好まし
い。その理由は次の通りである。すなわち、導電性物質
が酸化チタン表面から出てしまっては、出た部分の回り
の酸化チタン膜が掛けた電圧と逆電位になる場合もあ
り、そうなるとその部位に逆に金属イオンが付着しやす
くなるので好ましくない。In the present invention, in the photocatalyst mixed with the electroconductive substance, it is preferable that the particle size of the electroconductive substance mixed with the photocatalyst is smaller than the photocatalyst film thickness formed on the metal substrate. The reason is as follows. That is, if the conductive substance comes out of the surface of titanium oxide, it may have a potential opposite to the voltage applied to the titanium oxide film around the exposed portion, and in that case, metal ions are likely to attach to the portion. Therefore, it is not preferable.
【００２４】本発明では、導電性物質を混合する光触媒
において、光触媒に混合する導電性物質の粒径が金属基
板上に形成される光触媒膜に埋没することが好ましい。In the present invention, in the photocatalyst mixed with the conductive material, it is preferable that the particle diameter of the conductive material mixed with the photocatalyst is buried in the photocatalyst film formed on the metal substrate.
【００２５】本発明では、導電性物質を混合する光触媒
において、光触媒に混合する導電性物質が凝集なく島状
に点在（分散）することが好ましい。その理由は次の通
りである。すなわち、混合した導電性物質が凝集してし
まうと光触媒膜内で抵抗のバラツキが出来てしまい、光
触媒表面でも電圧の分布が発生する。この電圧の分布は
場合によっては金属イオンが逆に付着してしまう箇所が
生じてしまい不具合となる。導電性物質を分散させる方
法としては導電性物質の表面に硝酸をまぶす方法や界面
活性剤を添加する方法がある。In the present invention, in the photocatalyst in which the electroconductive substance is mixed, it is preferable that the electroconductive substance mixed in the photocatalyst is scattered (dispersed) in an island shape without aggregation. The reason is as follows. That is, when the mixed conductive material is aggregated, the resistance is varied in the photocatalyst film, and the voltage distribution is generated even on the photocatalyst surface. In some cases, this voltage distribution causes a problem that metal ions are attached to the opposite side. As a method of dispersing the conductive material, there are a method of sprinkling nitric acid on the surface of the conductive material and a method of adding a surfactant.
【００２６】本発明では、導電性物質を混合する光触媒
において、光触媒を成膜する前に光触媒溶液に導電性物
質を混合した後に光触媒膜を金属基板に生成することが
好ましい。In the present invention, in the photocatalyst in which the electroconductive substance is mixed, it is preferable to form the photocatalyst film on the metal substrate after mixing the electroconductive substance in the photocatalyst solution before forming the photocatalyst.
【００２７】本発明では、導電性物質を混合する光触媒
において、光触媒に混合する導電性物質が光触媒作用で
酸化物を作らない物質または腐食しない物質で構成され
ることが好ましい。混合した導電性物質の表面が酸化さ
れると抵抗が増して、光触媒膜の抵抗を下げる目的で混
合しているにもかかわらず、かえって抵抗を増す場合も
ある。また、導電性物質の表面に電気二重層が形成され
るおそれがあり、逆電位が発生するおそれがあり、本発
明の充分な効果が得られないばかりが、逆に金属イオン
を付着させる場合もある。また、本発明で使用するペル
オキソチタン酸溶液は前記した様に過剰な酸素を内在し
ており、混合、塗布、加熱の工程で他の成膜方法よりも
溶液中で酸化しやすい。光触媒作用で酸化物を作らない
物質には、例えばＮｉ−Ｐ，白金，金などの貴金属元
素，タングステン，ロジウム，インジウムなどである。In the present invention, in the photocatalyst mixed with the electroconductive substance, it is preferable that the electroconductive substance mixed with the photocatalyst is composed of a substance which does not form an oxide by the photocatalytic action or a substance which does not corrode. When the surface of the mixed conductive material is oxidized, the resistance increases, and the resistance may increase on the contrary even though the conductive material is mixed for the purpose of lowering the resistance of the photocatalyst film. In addition, there is a possibility that an electric double layer may be formed on the surface of the conductive substance, and a reverse potential may be generated, so that not only the sufficient effect of the present invention cannot be obtained, but also when a metal ion is adhered. is there. Further, the peroxotitanic acid solution used in the present invention contains excess oxygen as described above, and is more easily oxidized in the solution in the steps of mixing, coating and heating than other film forming methods. Examples of substances that do not form oxides by photocatalysis include precious metal elements such as Ni-P, platinum, and gold, tungsten, rhodium, and indium.
【００２８】本発明では、導電性物質を混合する光触媒
において、光触媒に混合する導電性物質が光触媒作用で
水中に溶出しない物質で構成されることが好ましい。そ
のような物質は、例えばＮｉ−Ｐ，白金，金などの貴金
属元素，タングステン，ロジウム，インジウムなどであ
る。In the present invention, in the photocatalyst mixed with the electroconductive substance, it is preferable that the electroconductive substance mixed with the photocatalyst is composed of a substance which is not eluted into water by the photocatalytic action. Such substances are, for example, precious metal elements such as Ni-P, platinum and gold, tungsten, rhodium and indium.
【００２９】[0029]
【発明の実施の形態】以下に本発明の実施形態のいくつ
かを例を挙げて説明する。BEST MODE FOR CARRYING OUT THE INVENTION Some of the embodiments of the present invention will be described below with examples.
【００３０】（実施形態１）図１は本発明の実施形態の
流体浄化装置を模式的に示すものである。被浄化水１中
に浸漬された光触媒体２（金属基板とその上に固定され
た光触媒膜とからなる）には交流電源３と直流電源４と
コンデンサー５が直列接続される。光触媒体２には直流
電源４の正極側を接続する。光触媒体２には正の印加電
圧７が生じ、被浄化水１中の正に荷電した金属イオン６
は同極性であるため光触媒体２に付着し析出することを
防止することができる。(Embodiment 1) FIG. 1 schematically shows a fluid purification apparatus according to an embodiment of the present invention. An AC power supply 3, a DC power supply 4, and a capacitor 5 are connected in series to the photocatalyst body 2 (comprising a metal substrate and a photocatalyst film fixed thereon) immersed in the water to be purified 1. The positive electrode side of the DC power supply 4 is connected to the photocatalyst 2. A positive applied voltage 7 is generated on the photocatalyst 2, and the positively charged metal ions 6 in the water to be purified 1
Since they have the same polarity, they can be prevented from adhering to and depositing on the photocatalyst body 2.
【００３１】基本的には水中の金属イオンはすべて正の
極性でイオン化されている。性能劣化を引き起こす金属
イオンはアルミ、ケイ素、銀、マグネシュウム等でこれ
らはすべて正のイオンである。負のイオンで水中に存在
すると考えられるものは塩素、臭素、硫化物、アンモニ
アであるが、これらは酸化されて光触媒表面に析出する
ことは考え難い。唯一、硫化物が酸化されると発生する
硫酸イオンが考えられるが、これは水中での溶解度が大
きく、発生しても水中に溶けてしまうために性能劣化は
おこらない。ただし、空気中では光触媒表面にとどまり
劣化することは考えられる。同様にアンモニアも酸化さ
れて硝酸イオンが発生しますが、水中ではすぐに溶けて
しまい光触媒表面には残らない。Basically, all metal ions in water are ionized with a positive polarity. The metal ions that cause performance deterioration are aluminum, silicon, silver, magnesium, etc., all of which are positive ions. Negative ions that are considered to exist in water are chlorine, bromine, sulfides, and ammonia, but it is unlikely that these will be oxidized and deposited on the photocatalyst surface. Sulfuric acid ions, which are generated when sulfides are oxidized, are considered to be the only ones, but they have a large solubility in water and even if they are generated, they dissolve in water and do not cause performance deterioration. However, it is conceivable that it will remain on the surface of the photocatalyst and deteriorate in the air. Similarly, ammonia is also oxidized to generate nitrate ions, but they dissolve immediately in water and do not remain on the photocatalyst surface.
【００３２】（実施形態２）図２は本発明の別の実施形
態の流体浄化装置を模式的に示すものである。ここでは
光触媒体と電源系のみを示した。光触媒体２は金属基板
８とその上に固定された光触媒膜９とから構成される。
光触媒膜９の中には導電性物質１０が混合、分散されて
いる。(Embodiment 2) FIG. 2 schematically shows a fluid purifying apparatus according to another embodiment of the present invention. Only the photocatalyst and the power supply system are shown here. The photocatalyst body 2 is composed of a metal substrate 8 and a photocatalyst film 9 fixed thereon.
A conductive substance 10 is mixed and dispersed in the photocatalyst film 9.
【００３３】本発明で用いる光触媒体は被処理流体との
接触面積を増大させるために網状の形態を採用すること
が好ましい。図３にそのような光触媒体の例を示す。こ
の光触媒体の金属基板は網状金属基板１１の表面に金属
粉末の焼結層１２を担持させた構造を有する（ａ）。焼
結層１２により更に金属基板の表面積を増大させること
ができる。焼結層１２上に光触媒膜を成膜する。光触媒
膜は膜厚１〜５μm（実質は２〜３μm）であるため焼結
層１２の凹凸を埋めることなく倣うように形成される。
そのため焼結層１２の表面積に近い膜面積が得られる
（ｂ）。The photocatalyst used in the present invention preferably adopts a net-like form in order to increase the contact area with the fluid to be treated. FIG. 3 shows an example of such a photocatalyst. The metal substrate of this photocatalyst has a structure in which a sintered layer 12 of metal powder is carried on the surface of a mesh metal substrate 11 (a). The sintered layer 12 can further increase the surface area of the metal substrate. A photocatalyst film is formed on the sintered layer 12. Since the photocatalytic film has a film thickness of 1 to 5 μm (substantially 2 to 3 μm), it is formed so as to follow the unevenness of the sintered layer 12 without filling it.
Therefore, a film area close to the surface area of the sintered layer 12 can be obtained (b).
【００３４】[0034]
【実施例】図２の実施形態の流体浄化装置を用いて水の
浄化実験を行った。実験条件を以下に示す。
浴槽水：２０リットル
浴槽水中の金属イオン： Ａｌ（アルミ）０．０９４ｍｇ／Ｌ
Ｓｉ（ケイ素）１２ｍｇ／Ｌ
光触媒体：１０×２０ｃｍ（網状金属基板両面成膜）
紫外線量：０．５ｍＷ／ｃｍ２
直流電源：電圧８Ｖ
交流電源：電圧５Ｖ，周波数５０ｋＨｚ
光触媒膜厚：３μm
導電性物質：Ｎｉ−Ｐ粉末（粒径１μm，球形状）EXAMPLE Using the fluid purifying apparatus of the embodiment of FIG.
A purification experiment was conducted. The experimental conditions are shown below.
Bath water: 20 liters
Metal ions in bath water: Al (aluminum) 0.094 mg / L
Si (silicon) 12 mg / L
Photocatalyst body: 10 × 20 cm (film formation on both sides of reticulated metal substrate)
Ultraviolet ray amount: 0.5 mW / cmTwo
DC power supply: voltage 8V
AC power supply: voltage 5V, frequency 50kHz
Photocatalytic film thickness: 3 μm
Conductive material: Ni-P powder (particle size 1 μm, spherical shape)
【００３５】〔光触媒体製造〕オーステナイト系ステン
レス鋼ＳＵＳ３１６を線材とした平畳織金網（＃４０／
２００メッシュ）を圧下率３０％で圧延して厚さ２８０
μｍの基体を準備し、その両面に平均粒径１０μｍのＳ
ＵＳ３１６Ｌ粉末を６０μｍの厚さに塗布後焼結し（９
５０℃×１０ｈｒ）下地膜とする。ついで平均粒径１２
μｍのＳＵＳ３１６Ｌ粉末を６０μｍの厚さに塗布後、
圧延（圧下率１５％）し、その後焼結（水素雰囲気中で
７３０℃×１０ｈｒ）して平均孔径３μｍ、厚さ０．３
４ｍｍの網状金属基板を作成した。ＳＵＳ３１６Ｌ粉末
の焼結には水をバインダーとして用いた。[Manufacture of Photocatalyst] Plain tatami woven wire mesh (# 40 / using austenitic stainless steel SUS316 as a wire rod)
(200 mesh) is rolled at a rolling reduction of 30% to a thickness of 280
A substrate with a diameter of 10 μm is prepared on both sides of the substrate.
US316L powder was applied to a thickness of 60 μm and then sintered (9
50 ° C. × 10 hours) As a base film. Then average particle size 12
After applying μm SUS316L powder to a thickness of 60 μm,
Rolled (reduction ratio 15%) and then sintered (730 ° C. × 10 hr in hydrogen atmosphere) to obtain an average pore diameter of 3 μm and a thickness of 0.3.
A 4 mm mesh metal substrate was prepared. Water was used as a binder for sintering the SUS316L powder.
【００３６】次に光触媒機能材として、アモルファス型
過酸化チタン水溶液（０．８４ｗ％）：アナターゼ型酸
化チタンゾル水溶液（０．８４ｗ％）：コロイダルシリ
カ水溶液（０．８４ｗ％）を３：７：０．１の割合で混
合して基板の表面に０．１ｇ／２５ｃｍ2 (ｗｅｔ状態)
の吹き付けをする。そして、常温乾燥の上、加熱乾燥
（３００℃×１ｈｒ）をして光触媒体とした。Next, as a photocatalyst functional material, an amorphous titanium peroxide aqueous solution (0.84 w%): anatase titanium oxide sol aqueous solution (0.84 w%): colloidal silica aqueous solution (0.84 w%) was used at 3: 7: 0. 0.1 g / 25 cm 2 (wet state) on the surface of the substrate after mixing at a ratio of 0.1
To spray. Then, it was dried at room temperature and dried by heating (300 ° C. × 1 hr) to obtain a photocatalyst.
【００３７】浴槽の水に光触媒体を入れ、光触媒に紫外
線を照射した時間と水の中のＴＯＣ（トータルカーボン
量）の変化を測定した。実験は「直流電源のみ」「印加
電源なし」についても同様にして実施した。その結果を
図４に示す。初期のＴＯＣ量を１００としている。印加
電源なしの場合はＴＯＣ量の低下速度が遅く光触媒作用
の劣化が顕著に認められた。劣化した光触媒体表面をＥ
ＳＣＡで分析するとＡｌ、Ｓｉが析出しており、状態は
Ａｌ２Ｏ３、ＳｉＯ２であることが判明した。直流電源
と交流電源を重畳して印加する場合が最も効率良く光触
媒が作用する。浴槽水の中に光触媒作用を劣化させる原
因となる金属イオンが存在していても、光触媒表面に析
出することが無く性能劣化が非常に少ない。直流電源の
みの印加では光触媒作用の劣化は見られるものの、光触
媒体表面のＡｌ、Ｓｉの析出量は比較的少なく一定の析
出抑制効果は認められる。A photocatalyst was placed in water in a bath, and changes in TOC (total carbon content) in water and time when the photocatalyst was irradiated with ultraviolet rays were measured. The experiment was similarly performed for "only DC power supply" and "no applied power supply". The result is shown in FIG. The initial TOC amount is 100. When the applied power source was not used, the rate of decrease in TOC amount was slow, and the deterioration of the photocatalytic action was remarkably observed. E to the deteriorated photocatalyst surface
Analysis by SCA revealed that Al and Si were precipitated and the states were Al 2 O 3 and SiO 2 . The photocatalyst works most efficiently when a DC power supply and an AC power supply are applied in a superimposed manner. Even if metal ions that cause deterioration of the photocatalytic action are present in the bath water, the performance is very small without being deposited on the photocatalyst surface. Although the deterioration of the photocatalytic action is observed when only a DC power source is applied, the amount of Al and Si deposited on the surface of the photocatalyst is relatively small, and a certain effect of inhibiting deposition is observed.
【００３８】[0038]
【発明の効果】本発明によれば光触媒を金属イオンを含
む水中で使用した場合、金属イオンが光触媒表面に析出
することを抑制することができるので、光触媒反応の効
率と速度を上げることができる。According to the present invention, when the photocatalyst is used in water containing metal ions, it is possible to prevent the metal ions from depositing on the photocatalyst surface, so that the efficiency and speed of the photocatalytic reaction can be increased. .
【図１】本発明の実施形態の流体浄化装置を模式的に示
す図である。FIG. 1 is a diagram schematically showing a fluid purification device according to an embodiment of the present invention.
【図２】本発明の別の実施形態の流体浄化装置を模式的
に示す図である。FIG. 2 is a diagram schematically showing a fluid purification device according to another embodiment of the present invention.
【図３】本発明で用いる光触媒体の例を示す写真であ
る。FIG. 3 is a photograph showing an example of a photocatalyst used in the present invention.
【図４】実施例と比較例における光触媒に紫外線を照射
した時間と水の中のＴＯＣの変化の関係。FIG. 4 shows the relationship between the time for which the photocatalyst was irradiated with ultraviolet rays and the change in TOC in water in Examples and Comparative Examples.
１ 被浄化水 ２ 光触媒体 ３ 交流電源 ４ 直流電源 ５ コンデンサー ６ 金属イオン ７ 印加電圧 ８ 金属基板 ９ 光触媒膜 １０ 導電性物質 １１ 網状金属基板 １２ 焼結層 1 Purified water 2 Photocatalyst 3 AC power supply 4 DC power supply 5 condenser 6 metal ions 7 Applied voltage 8 metal substrates 9 Photocatalyst film 10 Conductive material 11 Reticulated metal substrate 12 Sintered layer
フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｂ０１Ｊ 35/02 Ｃ０２Ｆ 1/70 Ｚ ４Ｇ０６９ Ｃ０２Ｆ 1/32 1/72 １０１ 1/70 1/46 １０１Ｃ 1/72 １０１ Ｂ０１Ｄ 53/36 Ｊ Ｆターム(参考） 4C080 AA07 AA10 BB02 BB05 CC02 HH05 JJ04 KK08 LL10 MM02 QQ11 4D037 AA09 AB01 BA18 CA04 4D048 BA07X BA41X BB03 BB07 EA01 4D050 AA10 AB07 BC06 BC09 BC10 4D061 DA08 DB20 EA02 EB01 EB06 EB31 EB33 FA16 4G069 AA03 AA08 BA04B BA17 BA48A CA05 DA06 EA08 EA11 EA12 Front page continuation (51) Int.Cl. 7 Identification code FI theme code (reference) B01J 35/02 C02F 1/70 Z 4G069 C02F 1/32 1/72 101 1/70 1/46 101C 1/72 101 B01D 53/36 JF Term (Reference) 4C080 AA07 AA10 BB02 BB05 CC02 HH05 JJ04 KK08 LL10 MM02 QQ11 4D037 AA09 AB01 BA18 CA04 4D048 BA07X BA41X BB03 BB07 FB07 A06 A06 A06 A16 BN01A16 BB01 BB01 DB01 BC31 DB08 DB31 BC08 DB31 DB08 BC01 BC08 DB31 DB08 BC03 4 BA04B BA17 BA48A CA05 DA06 EA08 EA11 EA12
Claims (22)
利用する流体浄化装置であって、光触媒表面に光触媒作
用を阻害する金属イオンの極性と同極性の電位を印加す
ることを特徴とする流体浄化装置。1. A fluid purification device that utilizes the oxidation and / or reduction action of a photocatalyst, characterized in that a potential having the same polarity as the polarity of a metal ion that inhibits the photocatalysis is applied to the surface of the photocatalyst. apparatus.
いる事を特徴とする請求項１の流体浄化装置。2. The fluid purifying apparatus according to claim 1, wherein the photocatalyst is fixed to a conductive metal substrate.
ナターゼ型酸化チタンゾルの混合溶液から生成される事
を特徴とする請求項１の流体浄化装置。3. The fluid purifier according to claim 1, wherein the photocatalyst is produced from a mixed solution of an aqueous peroxotitanic acid solution and anatase type titanium oxide sol.
２００〜４５０℃で熱処理されている事を特徴とする請
求項１の流体浄化装置。4. A photocatalyst is fixed on a metal substrate,
The fluid purifying apparatus according to claim 1, wherein the fluid purifying apparatus is heat-treated at 200 to 450 ° C.
圧以下にする事を特徴とする請求項１の流体浄化装置。5. The fluid purifying apparatus according to claim 1, wherein the voltage applied to the photocatalyst is set to be equal to or lower than the breakdown voltage of the photocatalyst film.
を特徴とする請求項１の流体浄化装置。6. The fluid purifying apparatus according to claim 1, wherein a frequency is applied to the voltage applied to the photocatalyst.
に電流が流れない様にする事を特徴とする請求項１の流
体浄化装置。7. The fluid purifying apparatus according to claim 1, wherein in the photocatalyst to which a voltage is applied, no current flows in the photocatalyst.
基板が網状の形態をしている事を特徴とする請求項１の
流体浄化装置。8. The fluid purifying apparatus according to claim 1, wherein in the photocatalyst to which a voltage is applied, the photocatalyst substrate has a net-like shape.
基板上に金属粉末を焼結してある事を特徴とする請求項
１の流体浄化装置。9. The fluid purifying apparatus according to claim 1, wherein in the photocatalyst to which a voltage is applied, metal powder is sintered on a photocatalyst substrate.
媒基板上に金属粉末が異形の粉末である事を特徴とする
請求項１の流体浄化装置。10. The fluid purification device according to claim 1, wherein in the photocatalyst to which a voltage is applied, the metal powder is an irregularly shaped powder on the photocatalyst substrate.
媒基板が水中でも腐食しない金属で形成されている事を
特徴とする請求項１の流体浄化装置。11. The fluid purifying apparatus according to claim 1, wherein in the photocatalyst to which a voltage is applied, the photocatalyst substrate is formed of a metal that does not corrode in water.
電性物質を混合する事を特徴とする請求項１の流体浄化
装置。12. The fluid purifying apparatus according to claim 1, wherein a conductive substance is mixed in the film layer of the photocatalyst to which a voltage is applied.
て、導電性物質を粉末状にする事を特徴とする請求項１
２の流体浄化装置。13. A photocatalyst for mixing a conductive substance, wherein the conductive substance is powdered.
2. Fluid purification device.
て、光触媒に混合する導電性物質は金属粉末であること
を特徴とする請求項１２の流体浄化装置。14. The fluid purifying apparatus according to claim 12, wherein in the photocatalyst mixed with the conductive material, the conductive material mixed with the photocatalyst is metal powder.
て、光触媒に混合する導電性物質の形状が球形である事
を特徴とする請求項１２の流体浄化装置。15. The fluid purifying apparatus according to claim 12, wherein, in the photocatalyst mixed with the conductive material, the shape of the conductive material mixed with the photocatalyst is spherical.
て、光触媒に混合する導電性物質の粒径が金属基板上に
形成される光触媒膜厚より小さい事を特徴とする請求項
１２の流体浄化装置。16. The fluid purifying apparatus according to claim 12, wherein in the photocatalyst mixed with the electroconductive substance, the particle diameter of the electroconductive substance mixed with the photocatalyst is smaller than the film thickness of the photocatalyst formed on the metal substrate.
て、光触媒に混合する導電性物質の粒径が金属基板状に
形成される光触媒膜に埋没する事を特徴とする請求項１
２の流体浄化装置。17. A photocatalyst mixed with a conductive substance, wherein the particle size of the conductive substance mixed with the photocatalyst is buried in a photocatalyst film formed on a metal substrate.
2. Fluid purification device.
て、光触媒に混合する導電性物質が凝集なく島状に点在
する事を特徴とする請求項１２の流体浄化装置。18. The fluid purifier according to claim 12, wherein in the photocatalyst mixed with the electroconductive substance, the electroconductive substance mixed with the photocatalyst is scattered in an island shape without aggregation.
て、光触媒を成膜する前に光触媒溶液に導電性物質を混
合した後に光触媒を金属基板に生成する事を特徴とする
請求項１２の流体浄化装置。19. The fluid purification apparatus according to claim 12, wherein in the photocatalyst for mixing the conductive material, the photocatalyst is formed on the metal substrate after mixing the conductive material in the photocatalyst solution before forming the photocatalyst. .
て、光触媒に混合する導電性物質が光触媒作用で酸化物
を作らない物質で構成される事を特徴とする請求項１２
の流体浄化装置。20. A photocatalyst mixed with a conductive substance, wherein the conductive substance mixed with the photocatalyst is composed of a substance which does not form an oxide by a photocatalytic action.
Fluid purification device.
て、光触媒に混合する導電性物質が光触媒作用で腐食し
ない物質で構成される事を特徴とする請求項１２の流体
浄化装置。21. The fluid purifying apparatus according to claim 12, wherein in the photocatalyst mixed with the conductive substance, the conductive substance mixed with the photocatalyst is composed of a substance which is not corroded by the photocatalytic action.
て、光触媒に混合する導電性物質が光触媒作用で溶出し
ない物質で構成される事を特徴とする請求項１２の流体
浄化装置。22. The fluid purifying apparatus according to claim 12, wherein the photocatalyst mixed with the electroconductive substance is composed of a substance which is not eluted by the photocatalytic action of the electroconductive substance mixed with the photocatalyst.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002091498A JP2003285069A (en) | 2002-03-28 | 2002-03-28 | Fluid cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002091498A JP2003285069A (en) | 2002-03-28 | 2002-03-28 | Fluid cleaning device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003285069A true JP2003285069A (en) | 2003-10-07 |
Family
ID=29236566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002091498A Pending JP2003285069A (en) | 2002-03-28 | 2002-03-28 | Fluid cleaning device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003285069A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007094189A1 (en) * | 2006-02-13 | 2007-08-23 | Osaka Titanium Technologies Co., Ltd. | Photpcatalyst type antifouling device |
| WO2008038529A1 (en) | 2006-09-27 | 2008-04-03 | Ube Industries, Ltd. | Silica base composite photocatalyst and process for producing the same |
| JP2008533675A (en) * | 2005-03-18 | 2008-08-21 | フラウンホッファー−ゲゼルシャフト ツァー フェーデルング デア アンゲバンテン フォルシュング エー ファー | Apparatus and method for heating a fuel cell or fuel cell stack |
| JP2009233634A (en) * | 2008-03-28 | 2009-10-15 | Ube Ind Ltd | Method for regenerating photocatalyst |
| JP2019523406A (en) * | 2016-07-26 | 2019-08-22 | シー−テック イノベーション リミテッド | Electrolytic treatment for nuclear decontamination |
-
2002
- 2002-03-28 JP JP2002091498A patent/JP2003285069A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008533675A (en) * | 2005-03-18 | 2008-08-21 | フラウンホッファー−ゲゼルシャフト ツァー フェーデルング デア アンゲバンテン フォルシュング エー ファー | Apparatus and method for heating a fuel cell or fuel cell stack |
| WO2007094189A1 (en) * | 2006-02-13 | 2007-08-23 | Osaka Titanium Technologies Co., Ltd. | Photpcatalyst type antifouling device |
| WO2008038529A1 (en) | 2006-09-27 | 2008-04-03 | Ube Industries, Ltd. | Silica base composite photocatalyst and process for producing the same |
| US8003562B2 (en) | 2006-09-27 | 2011-08-23 | Ube Industries, Ltd. | Silica base composite photocatalyst and process for producing the same |
| JP2009233634A (en) * | 2008-03-28 | 2009-10-15 | Ube Ind Ltd | Method for regenerating photocatalyst |
| JP2019523406A (en) * | 2016-07-26 | 2019-08-22 | シー−テック イノベーション リミテッド | Electrolytic treatment for nuclear decontamination |
| JP7018426B2 (en) | 2016-07-26 | 2022-02-10 | シー－テック イノベーション リミテッド | Electrolytic treatment for nuclear decontamination |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Gao et al. | Non-precious Co3O4-TiO2/Ti cathode based electrocatalytic nitrate reduction: Preparation, performance and mechanism | |
| US9073009B2 (en) | Air purification system | |
| TWI284684B (en) | Coatings for the inhibition of undesirable oxidation in an electrochemical cell | |
| He et al. | Photocatalytic activity of metal (Pt, Ag, and Cu)-deposited TiO2 photoelectrodes for degradation of organic pollutants in aqueous solution | |
| US20050014066A1 (en) | Electrode | |
| JP2003285069A (en) | Fluid cleaning device | |
| Hui et al. | In-situ synthesis of TiO2 rutile/anatase heterostructure by DC magnetron sputtering at room temperature and thickness effect of outermost rutile layer on photocatalysis | |
| WO2004111310A2 (en) | Electrode | |
| JP3228035B2 (en) | Manufacturing method of antibacterial material | |
| TW506851B (en) | Gas purifying system | |
| JP4296337B2 (en) | Method for producing organohalogen compound decomposing agent | |
| JP2009190008A (en) | Method for producing dielectric laminate and apparatus for removing particulate carbon-containing compound by using the laminate obtained thereby | |
| Karunakaran et al. | Solar photocatalytic detoxification of cyanide by different forms of TiO 2 | |
| JP2008126151A (en) | Catalytic body using anodic aluminum oxide film | |
| CN107815703B (en) | Hydrogen evolution activity cathode and preparation method thereof and electrolytic cell comprising the hydrogen evolution activity cathode | |
| JP2006183102A (en) | Porous diamond layer, method for producing porous diamond particle and electrode for electrochemistry using them | |
| JP2003299965A (en) | Photocatalyst material and production method of the same | |
| WO2005087375A1 (en) | Method for recovering noble metal from catalyst device having metal carrier | |
| JPH09299810A (en) | Photocatalyst and its preparation | |
| JP3988483B2 (en) | Treatment of free chlorine in water | |
| JPH10130887A (en) | Production of porous titanium oxide film, porous titanium oxide film and photocatalyst for decomposing gaseous nox | |
| JP2000254667A (en) | Water treating device using photocatalyst | |
| JP4554683B2 (en) | Electrochemical device | |
| KR101697298B1 (en) | Apparatus for electrochemical water treatment and method of manufacturing the same | |
| JPH07313887A (en) | Fibrous catalyst and its production |