JP2003284431A - Method for cultivating long-day plant and facilities for cultivating the plant - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for cultivating long-day plants promoting growth and flowering of flowering plants belonging to long-day plants regardless of cultivation seasons even with relatively less equipment investment, and to provide facilities for cultivating plants suitably usable in the method. <P>SOLUTION: The method for cultivating long-day plants comprises the following processes: a first process of arranging long-day plants P in plant cultivation facilities H provided with a covering body 2 changing the light quality of the sunlight so that the photon flux density of red light/far red light is smaller than 1, a second process of irradiating the long-day plants P with the sunlight transmitted through the covering body 2 in the daytime, and a third process of irradiating the long-day plants P with artificial light where a photon flux density is >0.1 μmol m<SP>-2</SP>s<SP>-1</SP>, and also the photon flux density ratio of red light to far red light is <1. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a method for cultivating long-day plants and a plant cultivation facility suitable for cultivation thereof.

[0002]

2. Description of the Related Art Conventionally, when artificially cultivating flowers belonging to long-day plants in a greenhouse, etc., they are cultivated under conditions close to the growth environment (particularly day length and temperature) of the original seed of the flowers. It is said that the plant cultivation facility that can artificially reproduce the growing environment such as a greenhouse is used.

On the other hand, as a technique for controlling the day length, for example, Japanese Patent Laid-Open No. 4-349824 discloses a relatively simple plant cultivation device for controlling the day length by using sunlight, a fluorescent lamp and an incandescent light bulb in combination. Have been described. (Prior Art 1) Further, in Japanese Patent Application Laid-Open Nos. 10-178899 and 10-178901, the wavelength range and the irradiation amount of the light necessary for growing are different for each plant. Controls the light quantity and the irradiation time for each wavelength and for the ratio of the photon flux density for each wavelength on the surface of the plant to be cultivated. Moreover, in this plant cultivation apparatus, temperature, humidity, and carbon dioxide which are growth environments other than the above-mentioned light are also controlled. More specifically, the light sources are blue (X: 400 to 500 nm) and green (G: 50).
0 to 600 nm), red (Y: 600 to 700 nm) and deep red (Z: 700 to 800 nm) light emitting diodes of respective wavelengths are provided, and the irradiation amount of each light emitting diode is changed according to the type of plant to be cultivated, X: 0 to 50%, Y:
40 to 100%, Z: 0 to 10%, and X + Y + Z =
A light source configured to be 100%, or (X + Y +
Z): G = 30-80%: 20-70%, X + Y
It has a light source such that + Z + G = 100%.
(Prior Art 2) Thus, in the prior art 2, when growing a young strain in a long-day plant, after irradiating blue light and red light at the initial stage of its growth, and then irradiating deep red light, It grows in a cycle of extinguishing all the light, and when the strain is full, it irradiates light only with red and blue and does not include deep red to prevent flower bud formation in the juvenile state.

On the other hand, Japanese Patent Application Laid-Open No. 5-217556 discloses a plant breeding capable of promoting photosynthesis of plants and controlling morphogenesis such as plant height, leaf area and shape similar to growth under natural light. Fluorescent lamp for use is described. This fluorescent lamp has an emission peak wavelength of 440 to 4
70 nm, 540-560 nm and 600-620n
The photon flux included in the wavelength range of 600 to 700 nm, and the phosphor layer including the three types of rare earth element activated phosphors in m and the far-red emitting phosphor having a peak wavelength of 700 to 800 nm, Light is emitted with a ratio to a photon flux included in the wavelength range of 800 nm of 0.8 to 1.2. (Prior Art 3) Further, in JP-A-4-304822, wavelengths of 400 to 500 nm and 500 to 600 nm are disclosed.
And a fluorescent lamp having the same emission energy ratio of 600 nm or more are described. (Prior Art 4) Furthermore, when the far-red light of sunlight is absorbed by a copper sulfate solution and the red light / far-red light ratio of the transmitted light is made larger than 1, the chrysanthemum length and internode length are shortened. Has been shown in many reports (McMahon et al., 1991; Raja.
Paskse Kelly, 1992; Rajapas
kse et al., 1993, 1995) (Prior Art 5) From these, in order to suppress flowering of long-day plants, a wavelength of 600-
It has been found that irradiating with 700 nm red light is effective.

[0005]

[Problems to be solved by the invention] Flowers of long-day plants are
Since the differentiation and development of flower buds are suppressed during the short day low temperature period (autumn / winter), the number of days to reach flowering is prolonged and the growth of plant height is also suppressed.

Therefore, in order to solve this problem, the prior art 2
With reference to, long-day plants were cultivated in winter under natural daylight. As a result, the development of flower bud differentiation and flowering were suppressed, and the flower bud differentiation promoting effect required for flowering was not obtained.
Further, in the case of producing a large number of long-day plants, the cultivating apparatus described in the prior arts 1 and 2 requires three types of light sources, and in the conventional art 2, in addition to the above, humidity, temperature and carbonic acid are required. Since a gas concentration sensor and a controller equipped with a computer for controlling these are required, there is a problem that not only the initial equipment cost but also the running cost will increase. In addition, the producer
When mass-producing long-day plants, in order to meet diverse demands, it is often difficult to change the growth conditions for each type, because a plurality of long-day plants are often cultivated under the same growth environment.

Next, in the case of the prior arts 3 and 4, since a single fluorescent lamp always emits light containing a plurality of colors having a constant ratio, the ratio between the colored lights is changed as desired according to the situation. I can't.

Further, in the prior art 5, since a copper sulfate solution is used, it is not practical, and it is not mentioned that the growth and flowering are promoted although the growth of long-day plants can be suppressed. In particular, it promotes the growth of long-day plants in the low-temperature winter to extend the plant height, promotes flower bud formation and development, and promotes and suppresses the growth of long-day plants as desired in seasons other than winter. There is no mention of arbitrary control.

On the other hand, as a result of repeating various experiments over a long period of time, the present inventor has used a light conversion film on a long-day plant to determine the ratio of red light / far-red light photon flux density during the day. If you irradiate sunlight that is smaller than 1, or continue to irradiate far-red light at night using a far-red fluorescent lamp,
It was discovered that the flower height grows faster and the plant height grows faster regardless of the growing season, including the low temperature winter. The present invention has been completed based on this finding.

The present invention provides a method for cultivating a long-day plant that promotes the growth and flowering of flowers belonging to a long-day plant regardless of the cultivation season with a relatively small capital investment, and a plant cultivation facility suitable for use in the method. The purpose is to provide.

The present invention also provides a method for cultivating a long-day plant in which the growth and flowering of the long-day plant can be optimally controlled according to the season by additionally performing suitable light irradiation for each season. It is another object to provide a plant cultivation facility suitable for use in.

[0012]

The method for cultivating long-day plants according to the invention of claim 1 has a ratio of photon flux density of red / far red of 1
The first step of arranging long-day plants planted in a plant cultivation facility in which a cover for converting sunlight into light is arranged so as to be smaller; The second step of irradiating the plants with sunlight; the photon flux density is 0.1 μmol, mainly in the time period when there is no sunlight irradiation.
A third step of irradiating long-day plants with artificial light having a photon flux density ratio of red / far-red that is larger than m ⁻² · s ⁻¹ and is smaller than 1. It has a feature.

In the present invention and each of the following inventions, the definitions and technical meanings of terms are as follows unless otherwise specified.

About the First Step The first step is a step of arranging long-day plants planted in a plant cultivation facility having a predetermined structure, and corresponds to a preparatory stage for cultivation. The predetermined configuration of the plant cultivation facility is related to the fact that the long-day plant that has been planted is irradiated with the sunlight that has passed through the cover that converts the sunlight into light, and the light quality conversion is red / far-red photon. The contents are such that the bundle density ratio is smaller than 1.

Therefore, the plant cultivation facility may have any specific structure. Further, the covering body is allowed to have a film shape or a plate shape. The film-shaped cover can be easily obtained as a light quality conversion synthetic resin film. The plate-shaped cover is obtained by applying a light conversion thin film to a glass plate or a translucent constituent resin plate, or imparting light conversion characteristics to the glass or the translucent constituent resin plate itself. May be. Furthermore, the cover may be arranged so as to cover a long-day plant inside a plant cultivation structure such as a greenhouse, or may form a wall surface of the plant cultivation structure.

Next, "red" in light quality conversion means a wavelength of 600 to 700 nm (more precisely, 600 nm to 7 nm).
Radiation in the range of (less than 00 nm), and is defined as an integral value in the above wavelength range. On the other hand, “far red” means radiation in the wavelength range of 700 to 800 nm (more accurately, 700 nm to less than 800 nm), and is defined as an integral value within the above wavelength range. Therefore, "the ratio of red / far red photon flux density is smaller than 1" means that the red light energy intensity is less than the far red light energy intensity.

"Planted long-day plant" means the second
In the process, it means that long-day plants need to be in a planted state.Generally, after planting, the seedlings are grown until they are ready to be planted after germination, but there is no planting process. It may be a direct-seeded seedling grown in the field. Also,
The long-day plants may be not only flowers, especially cut flowers having a relatively high plant height, but also foliage plants and vegetables if necessary. Furthermore, the planting may be performed using pots or pots, or may be performed directly in the field.

Regarding the Second Step The second step is a step of irradiating the long-day plants with sunlight that has passed through the covering during the daytime. In the present invention, “daytime” refers to a time period when sunlight is present, but before and after sunrise of about 1 to 2 hours and before and after sunset of about 1 to 2 hours, if desired, to the third step. As a transitional period of (3), it is allowed to use the third step simultaneously. In addition, the "mainly time zone where there is no sunlight irradiation" in the third step described below refers to the remaining time zone from one day excluding the daytime.
However, the above time period is not only continuous, but also due to weather conditions even during the day, when long-day plants are not effectively exposed to sunlight. Is allowed to be treated as a time zone where there is no sunlight irradiation. Also, by irradiating general artificial light of visible light, when a time zone occurs where the dark state at night is interrupted, the time zone does not affect the growth of plants. In this case, it is permitted to handle the time zone mainly as a time zone where there is no sunlight irradiation. However, if necessary, it is permissible to uniformly manage the sunlight irradiation time zone as daytime. Further, if necessary, it is acceptable that some blank time zones can be formed before the third step is started when shifting from the daytime to the time zone where there is no sunlight irradiation.

Thus, in the second step, the sunlight irradiating the long-day plant is converted into a light quality when the sunlight is transmitted through the light quality converter, the red light is reduced, and the far-red light is relatively converted. It becomes the light that is included a lot.

About the third step In the third step, the photosynthetic effective photon flux density is larger than 0.1 μmol · m ⁻² · s ⁻¹ and the red / far is mainly in the time zone without sunlight irradiation. In this step, a long-day plant is irradiated with artificial light having a red photon density ratio of less than 1. Also,
“Artificial light” refers to artificially created light or artificially controlled light generated in the natural world, and can generally be generated by an artificial light source. Any artificial light source may be used to obtain artificial light having a red / far-red photon flux density ratio of less than 1, but a fluorescent lamp, a metal halide lamp, a light emitting diode, or the like is preferable. Fluorescent lamps can emit light with various spectral distributions depending on the types of phosphors that make up the phosphor layer disposed on the inner surface of the glass bulb, and of course easily generate artificial light that satisfies the above conditions. Can be made. Further, the light emitting diode can obtain light emission exhibiting various spectral distributions depending on the material composition of the semiconductor.

Next, the operation of the present invention will be described. Since the present invention irradiates a lot of far-red light during the daytime and at night, regardless of the season, therefore, any of autumn-wintering overwintering cultivation, spring-sown cultivation, and summer-sown cultivation,
The growth of long-day plants such as cut flowers and internodes is increased, and flowering is promoted to shorten the number of days from planting to harvesting such as flowering. As a result, the utilization rate of the plant cultivation facility is improved, and the heating cost in winter can be reduced. Further, since the number of means for obtaining artificial light, such as the type of artificial light source, can be simply reduced, the initial capital investment amount is reduced.

The method for cultivating a long-day plant according to the invention of claim 2 is
The photon flux density is 0.1 μmol · m when the ambient temperature is 17 ° C or less, mainly during the time when there is no sunlight irradiation.
^{- 2} · s ^-1 a greater artificial light, and primarily red / far-red smaller first than photon flux ratio of density 1
When the plant is exposed to artificial light for a long day and the ambient temperature is 25 ° C or higher, the photosynthetic effective photon flux density is 0.1 μmol · m ^−2.
-Long day plants are irradiated with a second artificial light having a wavelength of 400 to 500 nm, which is larger than s- ¹ , and the ambient temperature is 17 to 2
When the temperature is 5 ° C., a second light irradiation step of irradiating long-day plants with the first and second artificial light is mainly provided.

The present invention defines a configuration in which the light irradiation conditions of long-day plants are changed according to the ambient temperature.
That is, the light irradiation conditions are changed by dividing the process of irradiating artificial light mainly during the time period when there is no sunlight irradiation, typically at night, into three depending on the ambient temperature.

The first category is when the ambient temperature is below 17 ° C., which mainly corresponds to the winter season. During this season, long-day plants are at low temperatures, so that growth is suppressed and flowering tends to be delayed. The second category is when the ambient temperature is 25 ° C. or higher, which mainly corresponds to summer. During this season, the flower bud differentiation action of long-day plants becomes active, and flowering tends to be promoted despite the short plant height.
The third category is when the ambient temperature is 17-25 ° C,
It mainly falls in the middle of the first and second sections and corresponds to autumn (and spring). During this season, no particular tendency is observed in the growth and flowering of long-day plants.

Next, the artificial light will be described. The first artificial light has the same configuration as the artificial light in claim 1.
On the other hand, the second artificial light mainly has a wavelength of 400 to
Any structure may be used as long as it has a wavelength of 500 nm, but it can be obtained by using, for example, a fluorescent lamp or a light emitting diode. Then, when the ambient temperature, which is the first division, is 17 ° C. or lower (winter season), the first artificial light is applied to the long-day plants. When the ambient temperature is 25 ° C. or higher, which is the second category (in summer), the second artificial light is emitted. When the ambient temperature is 17 to 25 ° C. which is the third section (autumn / spring), the first and second artificial lights are irradiated.

In the present invention, the light irradiation conditions during the day are not limited. That is, the light may be irradiated with natural light that has not been subjected to light quality conversion, or may be irradiated with sunlight that has been subjected to light quality conversion as in claim 1.

The operation of the present invention will be described. In the low temperature season of winter, by irradiating light with far-red light, which is stronger than red light, mainly at night, growth of long-day plants is promoted and flowering is accelerated. Therefore, long-day plants of autumn sowing are cultivated over the winter, and the plant height is long from winter to spring,
It becomes possible to grow high-quality cut flowers with large flowers and ship them.

Further, during the high temperature period of summer, by mainly irradiating with blue light at night, the flower bud differentiation action is suppressed, so that flower bud formation cannot be performed in a short plant height without shading. , Cut flowers with long plant height can be obtained as in spring and autumn. Therefore, according to the present invention, it becomes possible to grow long-day plants of spring sowing into high-quality cut flowers having a long plant height and large flowers and shipping them even from summer to autumn.

Further, in the middle temperature period of autumn (spring), mainly the light of far red light and the blue light, which are stronger than the red light, are radiated mainly at night, so that balanced light irradiation is performed. The plant height and flower size can be well cultivated. Therefore, the long-day plants of summer are cultivated into high-quality cut flowers with long plants and large flowers from autumn to winter.
It will be possible to ship.

A method for cultivating a long-day plant according to the invention of claim 3 is
The first step of arranging a long-day plant planted in a plant cultivation facility in which a cover for converting the quality of sunlight is arranged so that the ratio of red / far-red photon flux density is smaller than 1; In the second step of irradiating the long-day plants with sunlight that has passed through the coating; the photon flux density is 0.1 μmol. m ^{- 2} · s ^-1 a greater artificial light, and primarily red / ratio of far red photon flux density is irradiated a small first artificial light than one long-day plant, ambient temperature 25 ° C. or higher When the photon flux density is 0.1 μmol
・ Wavelengths of 400 to 50 that are larger than m ^-2 s ^-1
A third light irradiation step of irradiating a long-day plant with a second artificial light of 0 nm, and mainly irradiating the long-day plant with the first and second artificial lights when the ambient temperature is 17 to 25 ° C .; It is characterized by having.

The present invention is the same as claim 2 in that the light irradiation condition of the long-day plant is changed mainly at night according to the ambient temperature, but the daytime light is used. The irradiation conditions are also specified. That is, in addition to the mainly nighttime light irradiation of claim 2, during the daytime time when there is sunlight irradiation, as in the case of claim 1, far-red light of far-red light is compared with red light by light quality conversion. Irradiate plants with strong light for long days.

The operation of the present invention will be described. In the low temperature period of winter, by irradiating light with far-red light which is stronger than red light during daytime and nighttime, growth of long-day plants is promoted and flowering is accelerated. Therefore, it becomes possible to cultivate long-day plants of autumn sowing overwintering, to grow high-quality cut flowers with long plants and large flowers from winter to spring before shipment.

Further, in the high temperature season of summer, long-day plants can be well grown by irradiating light with far-red light which is stronger than daytime red light, and irradiating with blue light at night. so,
Since the flower bud differentiation effect is suppressed, flower bud formation will not be performed in a short plant length even if shade is not applied, and the plant grows to a long plant length from summer to autumn, and moreover,
It is possible to flower while adjusting the flower bud differentiation time.
Therefore, it is possible to grow long-day plants of spring sowing into high-quality cut flowers, which have a long plant height from summer to autumn and have large flowers in the same manner as in autumn (spring), and to ship them.

Further, during the middle temperature period of autumn (spring), by irradiating light with far-red light which is stronger than red light during the day and at night, the growth of long-day plants is promoted and at night. In addition to the above, mainly blue light is also radiated, so that balanced light irradiation can be performed, and plant height and flower size can be satisfactorily grown. for that reason,
From summer to long-day plants, it is possible to grow high-quality cut flowers with long plants and large flowers from autumn to winter before shipment.

A plant cultivation facility according to a fourth aspect of the present invention includes a facility structure for housing long-day plants; a facility structure for surrounding long-day plants in the facility structure, and a red / far red color A cover for converting the quality of sunlight so that the ratio of photon flux density is smaller than 1; and a photosynthetic effective photon flux density of greater than 0.1 μmol · m ⁻² · s ⁻¹ , and
An artificial light source arranged in a facility structure so as to irradiate a long-day plant with artificial light having a red / far-red photon density ratio of less than 1.

The present invention defines the structure of a plant cultivation facility suitable for carrying out the invention of claim 1. In the present invention,
The "facility structure" is a structure that defines a space for accommodating long-day plants, and includes a frame structure made of a light-transmissive member without a wall surface, a light-transmissive panel or a sheet-shaped cover. Greenhouse (house) structures that are assembled in the framework are applicable.
The frame is a so-called plastic tunnel that is formed by assembling an extruded frame such as a metal pipe or aluminum, or is a so-called plastic tunnel in which a plurality of synthetic resin pipes are bent against elasticity and are separated in the longitudinal direction and laid in a tunnel shape. Allow to be.

The "cover" means a member that surrounds a long-day plant housed in a plant cultivation facility with a space therebetween. In addition, the covering may cover the facility structure or be arranged so as to be fitted into the facility structure to form a greenhouse, or a bag-like body such as a mosquito net to which long-day plants are attached indoors in the greenhouse. It is allowed to have various structures such as. Further, in the present invention, the covering body has a function of converting the quality of sunlight into light so that the ratio of the red / far-red photon flux density becomes smaller than 1. Furthermore, when the temperature inside the cover rises above a predetermined level, by displacing a part of the enclosure or disposing a ventilation fan,
It can be configured to provide internal ventilation.

Next, the artificial light source emits artificial light having a red / far-red photon density ratio of less than 1, and emits light having a photon flux density of more than 0.1 μmol · m ⁻² · s ^−1. There is no particular limitation as long as it can irradiate long-day plants. As an artificial light source that can satisfy this condition, for example, the following configuration can be adopted.

That is, when the artificial light source is constituted by a fluorescent lamp, it is preferable to use a fluorescent lamp which is made of iron-activated lithium aluminate phosphor and has a phosphor layer for emitting far-red light having an emission peak at a wavelength of 740 nm. it can. The above phosphor has a general formula of LiAl ₂ : Fe. In addition, on the surface of the phosphor particles, MgO, CaO, Sr
One or more kinds of metal oxide fine particles selected from the group consisting of O, BaO and Y ₂ O ₃ are contained in a mass ratio of 0.01.
The luminous flux maintenance factor can be improved by adhering to 1.0%. Instead of the above structure, the general formula Gd ₃ G
A fluorescent lamp having a phosphor layer containing an a ₅ O ₁₂ : Cr phosphor can be used.

When the artificial light source is composed of a light emitting diode, it is a quaternary mixed crystal of aluminum / indium / gallium nitride and has a wavelength of 600 to 700 nm.
It is possible to use a light emitting diode provided with a light emitting diode element (chip) that emits light within the range.

Further, the arrangement of the artificial light source is not particularly limited as long as it is arranged so as to illuminate the long-day plant mainly with far-red light. Therefore, it may be arranged inside or outside the envelope, but the one arranged inside the envelope does not cause a loss of light when passing through the envelope,
Since it is close to a long-day plant, the irradiation illuminance can be increased and the irradiation efficiency can be improved, which is preferable. Further, the artificial light source may be any light source such as a fluorescent lamp, a metal halide lamp and a light emitting diode, but the fluorescent lamp is currently economical in terms of cost. In the case of a fluorescent lamp, a bulb-type fluorescent lamp is easier to use in a plant cultivation facility where the cultivation scale is relatively small, but if the cultivation scale is large, it is effective to use a straight tube fluorescent lamp or the like. In particular, since the bulb-type fluorescent lamp can be arranged by attaching a screw-in type lamp socket and screwing the base of the bulb-type fluorescent lamp into the socket, the structure and handling of the plant cultivating device are very simple and easy.

Thus, in the present invention, the long-day plants housed in the facility structure are covered with the enclosure to convert sunlight into light, so that the structure is simple, continuous, and inexpensive. The light quality can be converted to. Further, the artificial light source may be provided at a low cost because only the one that mainly emits far-red light is provided. Therefore, the plant cultivation device of the present invention requires less initial capital investment as a whole. The plant cultivation device of the present invention is effective when carrying out the invention of claim 2, but can be used for other cultivation methods.

The plant cultivation facility according to claim 5 is a facility structure for accommodating a long-day plant; a red / far-red photon flux is disposed in the facility structure so as to surround the long-day plant in the facility structure. A coating for converting the quality of sunlight so that the density ratio becomes smaller than 1; the photon flux density is 0.1 μmol · m
-A first artificial light source arranged in the facility structure so as to irradiate long-day plants with artificial light having a ratio of photon density flux of red / far-red that is larger than ^-2 · s ^-1 and smaller than 1. A second artificial light source having a photon flux density of greater than 0.1 μmol · m ⁻² · s ⁻¹ and arranged in a facility structure so as to irradiate a long-day plant with a second artificial light having a wavelength of 400 to 500 nm. It is characterized by having and;

The present invention defines the structure of a plant cultivation facility suitable for carrying out the invention of claim 2. Wavelength 400-50
The artificial light of 0 nm is blue light, but a known light source such as a fluorescent lamp, a metal halide lamp, or a light emitting diode can be used. As an artificial light source that satisfies this condition, for example, the following configuration can be adopted.

That is, when the second artificial light source is composed of a fluorescent lamp, europium-activated strontium,
Calcium, barium phosphate or europium activated barium, magnesium aluminate, wavelength 4
A fluorescent lamp having a phosphor layer containing a blue-emitting phosphor having an emission peak in the range of 00 to 500 nm can be used.

When the second artificial light source is composed of a light emitting diode, it is equipped with a light emitting diode element (chip) which is a ternary mixed crystal of indium gallium nitride and emits light in the wavelength range of 400 to 500 nm. Light emitting diodes can be used.

The plant cultivating apparatus of the present invention is characterized by claim 2.
However, it can be used for other cultivation methods.

The plant cultivation facility of the invention of claim 6 is a facility structure for accommodating a long-day plant; and is arranged in the facility structure so as to surround the long-day plant in the facility structure and has a red / far red color. A coating for converting the quality of sunlight so that the ratio of photon flux density is less than 1; the photon flux density is 0.1 μmo
The first structure arranged in the facility structure to irradiate long-day plants with artificial light having a ratio of photon flux density of red / far-red that is larger than 1 · m ⁻² · s ⁻¹ and smaller than 1. An artificial light source; substantially including a first emission within a wavelength range of 400 to 500 nm and a second emission within a wavelength range of 600 to 700 nm, and having an integrated value of a photon flux of the first emission of a second emission. And a third artificial light source arranged in the facility structure so as to emit artificial light larger than the integrated value of the photon flux of the emitted light.

When controlling the shipping time by suppressing the flowering of long-day plants such as eustoma that bloom when the daytime exceeds a certain level, conventionally, a shade such as a dark curtain is hung over the entire house to shorten the daytime. is doing. However, for example, the work of putting a dark curtain on the whole house of 500 m ² is
It is very hard work for humans.

The present invention defines a structure suitable for delaying the flowering time without shade-working. That is, the long-day plant is irradiated with light from the second artificial light source, the light having an integrated value of photon flux in the wavelength range of 400 to 500 nm larger than the integrated value of photon flux in the wavelength range of 600 to 700 nm. As an artificial light source that satisfies this condition,
For example, the following configuration can be adopted.

That is, when the third artificial light source is composed of a fluorescent lamp, europium-activated strontium,
Calcium, barium phosphate or europium activated barium, magnesium aluminate, wavelength 4
A blue light-emitting phosphor having an emission peak in the range of 0 to 500 nm and europium-activated yttrium oxide or europium, magnesium, titanium-activated yttrium sulfate or manganese-activated magnesium fluorogermanate, and having a wavelength of 600 to 700 nm. A fluorescent lamp provided with a phosphor layer containing a red-emitting phosphor having an emission peak can be used.

When the third artificial light source is composed of a light emitting diode, the first light emitting diode element (chip) which is a ternary mixed crystal of indium gallium nitride and emits light in the wavelength range of 400 to 500 nm. And a second light emitting diode element (chip) that emits light in the wavelength range of 600 to 700 nm with a quaternary mixed crystal of aluminum, indium, and gallium nitride can be used. The first and second light emitting diode elements (chips) may be apparently one element embedded in a common lens, or may be embedded in lenses separated from each other. It may be a plateau that apparently constitutes a plurality of elements.

Thus, in the present invention, the above-mentioned constitution makes it possible to effectively delay the flowering time. Further, since the work of applying a shade such as a dark curtain can be avoided, the work becomes easy. The plant cultivating apparatus of the present invention is effective in delaying the flowering time by using the third artificial light source as described above, but by using the first artificial light source, It can also be used in a cultivation method for the purpose of promoting the growth defined in 1 above and accelerating flowering.

[0054]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

1 to 5 show an embodiment of a method for cultivating a long-day plant of the present invention, a first embodiment of a plant cultivation facility and a comparative example, and FIG. 1 is a conceptual diagram of the plant cultivation facility. 2 is a graph showing the spectral transmittance characteristics of the coating, FIG.
Is a graph showing the spectral distribution characteristics of artificial light, and FIG. 4 is a comparative example 1.
5 is a graph showing the spectral distribution characteristics of FIG. 5, and FIG. 5 is a graph showing the spectral distribution characteristics of Comparative Example 2. In FIG. 1, H is a plant cultivation facility, F is a cultivation bed, and P is a long-day plant.

First, the plant cultivation facility H will be described.
The plant cultivation facility H includes a facility structure 1, a cover 2, an artificial light source 3, X, and Y. The facility structure 1 is composed of a framework.
Then, it is divided into a plurality of test sections corresponding to the artificial light sources 3, X, and Y, and each test section is separated by a light-reflecting sheet (product name: silver poly film) 5.

The cover 2 is made of a light quality conversion film that suppresses the transmittance of red light, has the spectral transmittance characteristics as shown in FIG. 2, and surrounds the facility structure 1 from the outside. is doing. That is, in the spectral transmittance characteristic of the covering body 2, the transmittance in the wavelength range of 600 to 700 nm is lowered. Therefore, the sunlight passing through the cover 2 has a photon flux density of red light smaller than that of far red light. Therefore, the red color of the sunlight passing through the covering 2
The ratio of far-red photon flux density is less than 1.

The artificial light source 3 is a bulb-type fluorescent lamp that emits far-red light.
If it has a spectral distribution characteristic as shown in FIG.
Both are directed downward by the mounting member 4 above the inside of the cover 2.
It is installed in the The above bulb-shaped fluorescent lamp is
The phosphor layer is made of iron-activated lithium aluminate phosphor,
It emits far-red light having an emission peak at a wavelength of 740 nm.
U The spectral distribution characteristic of the artificial light source 3 has a wavelength of 600 to 700.
From the photon flux in the range of nm,
The photon flux in the circle is larger. Therefore, the person
The red / far-red photon flux density ratio of the light source 3 is less than 1.
Become. Further, the artificial light source 3 is a photosynthetic effective light amount of far-red light.
The bundle density is 0.1 μmol · m^-2・ S ^-1Greater than
It is arranged so that.

The cultivation bed F is arranged below the artificial light source 3 inside the cover 2.

The long-day plants P are planted in flower pots and arranged in the cultivation bed F. The long-day plants P are illuminated by the sunlight passing through the cover 2 during the day, and the artificial light source at other times. It is irradiated with light.

The experimental results will be described below.

First, the experimental specifications are shown below. 1. Specifications of Cover 2, Artificial Light Source 3 (Invention), X (Comparative Example 1), Y (Comparative Example 2) (1) Cover 2: Red light transmission suppressing film (Mitsui Chemicals)
(Manufactured by SXE-4 type), photon flux density ratio is 0.73 (2) Artificial light source 3: Far-red light emitting bulb type fluorescent lamp (manufactured by Toshiba Lighting & Technology Corp.), spectral distribution characteristics are shown in Fig. 3. As of. (3) Artificial light source X: Red light emitting bulb type fluorescent lamp (manufactured by Toshiba Lighting & Technology Corp.), spectral distribution characteristics are as shown in FIG. (4) Artificial light source Y: blue light emitting bulb type fluorescent lamp (manufactured by Toshiba Lighting & Technology Co., Ltd.), spectral distribution characteristics are as shown in FIG. 2. Experimental conditions (1) Long-day plant: Gypsophila paniculata (Bristofariae) (2) Experimental method (2-1) Day / night temperature (6:00 to 18: 00/18: 00)
0-6: 00) is 17/12 ° C, 24/19 ° C, 30 /
Nine light irradiation sections were provided by combining the cultivation temperature of three stages of 25 ° C. and the above-mentioned three kinds of artificial light sources 3, X and Y. (2-2) One plant was planted in No. 5 pot on April 18 to make three pieces, and 10 plants were tested in one irradiation zone. Each artificial light source 3, Z, Y has a length of 105 cm and a width of 70 cm.
B. One light was placed in a frame surrounded by the covering 2 having a height of 115 cm, and the lights were set at a height of 90 cm from the floor. (2-3) Second step: Cultivated under natural light from 9.00 am to 5:00 pm. (2-4) Third step: From 5 pm to 9 am the next morning, the artificial light sources 3, X, and Y were used to irradiate the light, and the photoperiod was adjusted to 24 hours. (2-5) The experiment started on May 14 and after the start of light irradiation 2
It was terminated on October 2, the 0th week. 3. Experimental Results Experimental results will be described below with reference to FIGS. 6 to 11.

6 to 11 show the experimental results in the first embodiment of the method for cultivating a long-day plant of the present invention as Comparative Example 1.
6 is a graph showing the plant height, FIG. 7 is a graph showing the flowering rate, FIG. 8 is a graph showing the plant height and the flowering rate at the same time, and FIG. 9 is a graph showing the relationship between the growth temperature condition and the cut flower length. FIG. 10 is a graph showing the relationship between growth temperature conditions and flower weight, and FIG. 11 is a graph showing relationship between growth temperature conditions and stem diameter. (1) Plant height: The results shown in FIG. 6 were obtained. In addition,
In the figure, curve A represents the present invention, curve B represents Comparative Example 1, and curve C represents Comparative Example 2. As is clear from the figure, according to the present invention, the plant height started to grow remarkably from the third week as compared with Comparative Examples 1 and 2, and about 100 cm around the 16th week.
Reached

On the other hand, in Comparative Example 1, as compared with Comparative Example 2, the growth of the plant height became remarkable from around the 10th week, but the growth stopped at around the 15th week, and was only 40 cm. There wasn't.

Further, in Comparative Example 2, the growth was extremely suppressed, and the growth was stopped at about 20 cm even at the end of the experiment. (2) Flowering branch rate: The results shown in FIG. 7 were obtained. Each curve A, B, C has the same meaning as in FIG. As is clear from the figure, according to the present invention, a part of the flowers begins to bloom from the first week and then blooms sequentially, and at about 15th week, almost 100%.
Flowered However, the flowering of Comparative Examples 1 and 2 was significantly delayed. In Comparative Example 2, the flowering branch rate was almost 0% until the end. Fig. 8 shows the combined plant height and flowering branch rate for household chores. (3) Next, growth temperature conditions, cut flower length, cut flower weight,
The experimental results regarding the relationship with the stem diameter will be described with reference to FIGS. 9 to 11.

The cut flower length, flower weight and stem diameter all decreased in the order of 17 ° C./12° C., 24 ° C./19° C., 30 ° C./25° C., and the lower the growth temperature, the better the growth. . The difference was significant in the order of cut flower weight, cut flower length, and stem diameter.

12 to 14 illustrate the spectral distribution characteristics of the first artificial light source and the second artificial light source in the second embodiment of the plant cultivation facility of the present invention, and FIG. 12 shows the first artificial light source. 13 is a graph showing the spectral distribution characteristic of the third artificial light source, and FIG.
The graph showing the range of m, FIG.
It is a graph which shows the range of 00 nm. This embodiment corresponds to claim 6 and each light source is constituted by a light emitting diode.

That is, as shown in FIG. 12, the first artificial light source has a light emission peak of 730 nm and is composed of a light emitting diode made of a quaternary mixed crystal of aluminum / indium / gallium nitride.

The second artificial light source has an emission peak at 445 nm as shown in FIG.
As shown in FIG. 14, the first light emitting diode made of a ternary mixed crystal of gallium nitride had an emission peak of 66.
It is 0 nm and is constituted by a second light emitting diode made of a quaternary mixed crystal of aluminum, indium and gallium nitride.

[0070]

According to the first aspect of the present invention, planting is carried out in a plant cultivation facility in which a cover for converting the quality of sunlight is arranged so that the ratio of red / far-red photon flux density becomes smaller than 1. Arranged long-day plants, in the daytime, irradiate long-day plants with sunlight that has penetrated the cover, mainly at night,
Photon flux density 0.1 [mu] mol · m - greater than ^{2 ·} s ^-1, and, by the ratio of red / far-red photon flux density irradiates the smaller artificial light than 1 in long-day plants, relatively small Even with capital investment, it is possible to provide a method for cultivating a long-day plant that promotes the growth and flowering of flowers belonging to the long-day plant regardless of the cultivation season.

According to the invention of claim 2, artificial light having a photon flux density higher than 0.1 μmol · m ⁻² · s ⁻¹ mainly at night when the ambient temperature is 17 ° C. or lower, and When the long-day plant is irradiated with the first artificial light having a ratio of photon flux density of red / far red mainly smaller than 1, the photon flux density is 0.1 μmol when the ambient temperature is 25 ° C. or higher.
・ Wavelengths of 400 to 50, which are larger than m ⁻² · s ⁻¹
By irradiating a long-day plant with 0 nm second artificial light, and mainly by irradiating the long-day plant with the first and second artificial light when the ambient temperature is 17 to 25 ° C. It is possible to provide a method for cultivating a long-day plant capable of optimally controlling the growth and flowering of the long-day plant depending on the season regardless of whether or not sunlight is converted to light.

According to the third aspect of the present invention, the length of a plant planted in a plant cultivation facility in which a cover for converting the quality of sunlight is arranged so that the ratio of the red / far-red photon flux density is smaller than 1. Day plants are arranged, and sunlight is transmitted through the covering to the long day plants during the day, and the photon flux density is 0.1 μmo mainly at night when the ambient temperature is 17 ° C. or less.
artificial light larger than l · m ⁻² · s ⁻¹ , and
When the long-day plant is irradiated with the first artificial light having a ratio of red / far-red photon flux density smaller than 1, the photon flux density is 0.1 μmol · m ⁻² · s when the ambient temperature is 25 ° C. or higher.
^{-1 with a} wavelength of 400 to 500 nm
Long-day plants are irradiated with artificial light of, and the ambient temperature is 17 to 25 ° C.
In this case, by irradiating the long-day plant mainly with the first and second artificial lights, it is possible to provide a method for cultivating a long-day plant that can optimally control growth and flowering of the long-day plant according to the season. .

According to the invention of claim 4, the facility structure and the long-day plant in the facility structure are arranged so as to surround the facility structure, and the ratio of the red / far-red photon flux density is smaller than 1. And a coating that converts the quality of sunlight into light so that the photon flux density is greater than 0.1 μmol · m ⁻² · s ⁻¹ and the ratio of red / far red photon flux density is less than 1 Since it is equipped with an artificial light source arranged in the facility structure to irradiate long-day plants with light, the growth and flowering of flowers belonging to long-day plants can be used in the cultivation season with a relatively small capital investment. Regardless, it is possible to provide a plant cultivation facility that promotes it.

According to the fifth aspect of the present invention, the facility structure and the long-day plant in the facility structure are arranged so as to surround the facility structure, and the photon flux density ratio of red / far red is smaller than 1. And a coating that converts the quality of sunlight into light so that the photon flux density is greater than 0.1 μmol · m ⁻² · s ⁻¹ and the ratio of red / far red photon flux density is less than 1 The first artificial light source arranged in the facility structure to irradiate the plant with light for a long day, and the photon flux density is 0.1 μmo
Mainly wavelengths of 400 to 5 larger than 1 · m ⁻² · s ⁻¹
A plant cultivation facility most suitable for carrying out the invention of claim 2, comprising a second artificial light source arranged in the facility structure so as to irradiate the long-day plant with the second artificial light of 00 nm. Can be provided.

According to the sixth aspect of the present invention, the facility structure and the long-day plant in the facility structure are arranged so as to surround the facility structure, and the photon flux density ratio of red / far red is smaller than 1. And a coating that converts the quality of sunlight into light so that the photon flux density is greater than 0.1 μmol · m ⁻² · s ⁻¹ and the ratio of red / far red photon flux density is less than 1 A first artificial light source arranged in the facility structure so as to irradiate a long-day plant with light, a first light emission within a wavelength range of 400 to 500 nm, and a second light emission within a wavelength range of 600 to 700 nm. A third artificial light source that is substantially included and is arranged in the facility structure so as to emit artificial light in which the integrated value of the photon flux of the first emission is larger than the integrated value of the photon flux of the second emission. Long-day plant growth at the desired time by having It is possible to provide a plant cultivation facility that controls flowering by controlling flowering.

[Brief description of drawings]

FIG. 1 is a conceptual diagram of a plant cultivation facility showing an embodiment of a method for cultivating a long-day plant of the present invention, a first embodiment of a plant cultivation facility, and a comparative example.

FIG. 2 is a graph showing the spectral transmittance characteristics of the coated body as well.

FIG. 3 is a graph showing a spectral distribution characteristic of artificial light.

FIG. 4 is a graph showing a spectral distribution characteristic of Comparative Example 1 as well.

FIG. 5 is a graph showing a spectral distribution characteristic of Comparative Example 2 as well.

FIG. 6 is a graph showing the plant height as an experimental result in the first embodiment of the method for cultivating a long-day plant of the present invention while comparing it with those of Comparative Examples 1 and 2.

[Fig. 7] Similarly, a graph showing the flowering branch ratio

FIG. 8 is a graph showing the plant height and the flowering branch rate at the same time.

FIG. 9 is a graph showing the relationship between growth temperature conditions and cut flower length.

FIG. 10 is a graph showing the relationship between growth temperature conditions and cut flower weight.

FIG. 11 is a graph showing the relationship between growth temperature condition and stem diameter.

FIG. 12 is a graph showing the spectral distribution characteristics of the first artificial light source in the second embodiment of the plant cultivation facility of the present invention.

FIG. 13 is a graph showing a wavelength range of 400 to 500 nm in the spectral distribution characteristic of the third artificial light source.

FIG. 14 is a graph showing a wavelength range of 600 to 700 nm.

[Explanation of symbols]

1 ... Facility structure, 2 ... Cover, 3 ... Artificial light source, F ... Cultivation bed, H ... Plant cultivation facility, P ... Long-day plant

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Masahisa Yoshimura             2-9-4 Natorigaoka, Natori City, Miyagi Prefecture (72) Inventor Keiko Katsuta             53-5 Gojincho, Wakabayashi-ku, Sendai City, Miyagi Prefecture (72) Inventor Moriyama             4-3-1, Higashishinagawa, Shinagawa-ku, Tokyo             Itec Co., Ltd. F-term (reference) 2B022 DA08                 2B024 DA04

Claims (6)

[Claims] 1. A long-day plant arranged in a plant cultivation facility in which a cover for converting the quality of sunlight is arranged so that the ratio of red / far-red photon flux density is smaller than 1. The second step of irradiating a long-day plant with sunlight that has passed through the coating in the daytime; and the photosynthetic effective photon flux density is 0.1 μm mainly in a time period when there is no sunlight irradiation.
a third step of irradiating a long-day plant with artificial light having a ratio of photon densities of red / far-red that is larger than mol · m ⁻² · s ⁻¹ and is smaller than 1; A method of cultivating a long-day plant characterized. 2. When the ambient temperature is 17 ° C. or less, the photon flux density is about 0.
A long-day plant is irradiated with a first artificial light that is an artificial light larger than 1 μmol · m ⁻² · s ⁻¹ and mainly having a red / far-red photon flux density ratio of less than 1, and an ambient temperature of 25 When the temperature is above ℃, the photon flux density is 0.1 μmol.
wavelengths larger than m ⁻² · s ⁻¹ mainly 400 to 500
The long-day plant is irradiated with the second artificial light of nm, and the ambient temperature is 1
A method for cultivating a long-day plant, which comprises a light irradiation step of mainly irradiating the long-day plant with the first and second artificial lights at a temperature of 7 to 25 ° C. 3. The ratio of red / far-red photon flux density is from 1
A coating that converts the quality of sunlight is arranged so that it becomes smaller.
The first to place long-day plants planted in the plant cultivation facility
Process and; In the daytime, the sunlight that has passed through the coating is long
The second step of irradiating the plant;
Light intensity when the ambient temperature is 17 ° C or less
The bundle density is 0.1 μmol · m^-2・ S^-1Greater than
Artificial light and mainly red / far-red photons
The first artificial light with a bundle density ratio of less than 1 illuminates long-day plants.
And the photon flux density is 0.
1 μmol · m ^-2・ S^-1Greater than wavelength 4
Irradiate a long-day plant with a second artificial light of 0 to 500 nm,
When the ambient temperature is 17 to 25 ° C, the
A third light irradiation step of irradiating a long-day plant with the artificial light of 2;
A method for cultivating a long-day plant characterized by comprising: 4. A facility structure accommodating a long-day plant; arranged in the facility structure so as to surround the long-day plant in the facility structure, and having a ratio of red / far-red photon flux density smaller than 1. And a coating for converting the quality of sunlight into light; a photon flux density of greater than 0.1 μmol · m ⁻² · s ⁻¹ ,
And a artificial light source arranged in a facility structure for irradiating a long-day plant with artificial light having a red / far-red photon flux density ratio of less than 1; Facility. 5. A facility structure accommodating a long-day plant; arranged in the facility structure so as to surround the long-day plant in the facility structure, and having a ratio of red / far-red photon flux density of less than 1. And a coating for converting the quality of sunlight into light; a photon flux density of greater than 0.1 μmol · m ⁻² · s ⁻¹ ,
And a first artificial light source arranged in a facility structure to irradiate a long-day plant with artificial light having a red / far-red photon flux density ratio of less than 1; a photon flux density of 0.1 μmol.
wavelengths larger than m ⁻² · s ⁻¹ mainly 400 to 500
and a second artificial light source arranged in a facility structure so as to irradiate a long-day plant with a second artificial light of nm. 6. A facility structure for accommodating a long-day plant; arranged in the facility structure so as to surround the long-day plant in the facility structure, and having a ratio of red / far-red photon flux density of less than 1. And a coating for converting the quality of sunlight into light; a photon flux density of greater than 0.1 μmol · m ⁻² · s ⁻¹ ,
And a first artificial light source arranged in a facility structure to irradiate a long-day plant with artificial light having a red / far-red photon flux density ratio of less than 1; a photon flux density of 0.1 μmol.
wavelengths larger than m ⁻² · s ⁻¹ mainly 400 to 500
First emission in the range of nm and wavelength 600-700n
substantially including a second emission within the range of m
A third artificial light source arranged in the facility structure so as to emit artificial light whose integrated value of the photon flux of the emitted light is larger than the integrated value of the photon flux of the second emitted light. Plant cultivation facility to be.