JP2003282522A - Resist-peeling device and method of controlling the same - Google Patents
Resist-peeling device and method of controlling the sameInfo
- Publication number
- JP2003282522A JP2003282522A JP2002086876A JP2002086876A JP2003282522A JP 2003282522 A JP2003282522 A JP 2003282522A JP 2002086876 A JP2002086876 A JP 2002086876A JP 2002086876 A JP2002086876 A JP 2002086876A JP 2003282522 A JP2003282522 A JP 2003282522A
- Authority
- JP
- Japan
- Prior art keywords
- stripping
- resist
- temperature
- peeling
- standby
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Weting (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、レジスト剥離装置
及びレジスト剥離装置の制御方法に関し、特にレジスト
剥離処理時と剥離処理待機時とで剥離液の温度を調節す
るレジスト剥離装置及びレジスト剥離装置の制御方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist stripping apparatus and a method for controlling a resist stripping apparatus, and more particularly to a resist stripping apparatus and a resist stripping apparatus for adjusting the temperature of stripping solution during resist stripping processing and standby of stripping processing. Regarding control method.
【0002】[0002]
【従来の技術】一般に、IC等の半導体装置を製造する
際に、製造工程において、該半導体装置を構成する半導
体ウェハの表面に塗布されたレジスト被膜を剥離させる
工程がある。このレジスト剥離工程には、例えば、レジ
スト剥離液浸漬工程、リンス液浸漬工程、アルコール浸
漬工程、純水洗浄工程等が含まれている。2. Description of the Related Art Generally, when manufacturing a semiconductor device such as an IC, there is a step of peeling a resist film applied on the surface of a semiconductor wafer constituting the semiconductor device in the manufacturing process. This resist stripping process includes, for example, a resist stripping liquid dipping process, a rinse liquid dipping process, an alcohol dipping process, and a pure water cleaning process.
【0003】このように構成されたレジスト被膜の剥離
処理によれば、表面にレジスト被膜が塗布された半導体
ウェハをレジスト剥離液が満たされた剥離液槽内に所定
時間浸漬することによって、レジスト被膜を剥離するこ
とができる。According to the stripping treatment of the resist coating thus constructed, the semiconductor wafer having the resist coating applied on its surface is immersed in a stripping solution tank filled with the resist stripping solution for a predetermined period of time to form the resist coating. Can be peeled off.
【0004】しかし、このとき剥離液槽内に水分が含ま
れていると、剥離液の液性が酸性またはアルカリ性に変
化することに起因して、半導体ウェハ上のアルミニウム
配線パターンが変質劣化し、断線や腐食が発生する等の
問題がある。However, if the stripping solution tank contains water at this time, the aluminum wiring pattern on the semiconductor wafer deteriorates and deteriorates due to the change of the stripping solution to acidic or alkaline. There are problems such as disconnection and corrosion.
【0005】そのため、通常、レジスト剥離装置では、
剥離液槽内に水分が混入しないように、剥離液温度を水
分が蒸発するに足る温度(100℃以上)に保持して使
用している。 また、一般に剥離液は、その液温を10
0℃以上で昇温させると剥離力が上昇し、引火性等の剥
離液の危険度に合わせて120℃以下で保持・使用して
いる。Therefore, normally, in the resist stripping apparatus,
The temperature of the stripping solution is maintained at a temperature (100 ° C. or higher) sufficient to evaporate the water, so that the stripping solution tank does not contain water. Further, in general, the stripping solution has a solution temperature of 10
When the temperature is raised to 0 ° C or higher, the peeling force increases, and the temperature is maintained and used at 120 ° C or lower according to the risk of the flammability of the peeling liquid.
【0006】[0006]
【発明が解決しようとする課題】ところが、従来の剥離
液は、処理時と未処理時で同じ設定温度に保持され、剥
離力を上昇するために剥離液槽内の液温の設定温度を高
くし処理を行った後もその高い温度で保持されるため、
剥離液の蒸発が促進され、温度設定前後で未処理の剥離
液の消耗度合い大きくなるという問題点があった。ま
た、一連のレジスト処理工程には処理時間差があるた
め、次の半導体ウェハの剥離処理に移るまでには所定の
間隔があり、その間液温を保持することによる無駄な電
力及び剥離液消費が避けられなかった。However, the conventional stripper is kept at the same set temperature during treatment and untreated, and the set temperature of the liquid temperature in the stripper tank is increased to increase the stripping force. Since it is kept at that high temperature even after the treatment,
There is a problem in that the evaporation of the stripping solution is promoted, and the degree of consumption of the untreated stripping solution increases before and after the temperature is set. In addition, since there is a processing time difference between the series of resist processing steps, there is a predetermined interval before moving to the next semiconductor wafer stripping process, and wasteful power consumption and stripping solution consumption due to maintaining the liquid temperature during that period are avoided. I couldn't do it.
【0007】そこで、本発明は、上述した課題に鑑みて
なされたものであり、レジスト剥離液の蒸発による消耗
を低減するとともに無駄な電力消費を低減することを可
能とするレジスト剥離装置及びレジスト剥離装置の制御
方法を提供することを目的とする。Therefore, the present invention has been made in view of the above-described problems, and a resist stripping apparatus and a resist stripping apparatus that can reduce the consumption of the resist stripping solution due to evaporation and the wasteful power consumption. An object is to provide a method of controlling a device.
【0008】[0008]
【課題を解決するための手段】上述の目的を達成するた
めに、本発明に係るレジスト剥離装置は、レジスト被膜
が塗布された半導体ウェハの該レジスト被膜を剥離液に
より剥離処理するレジスト剥離装置において、剥離液を
満たした剥離液槽と、剥離液の温度を調節する温度調節
手段と、剥離液槽の温度を剥離処理時にはレジスト剥離
処理温度とし、剥離処理待機時には待機温度とする温度
制御手段とを備えている。In order to achieve the above object, a resist stripping apparatus according to the present invention is a resist stripping apparatus for stripping a resist coating of a semiconductor wafer coated with a resist coating with a stripping solution. A stripping solution tank filled with the stripping solution, a temperature control means for controlling the temperature of the stripping solution, and a temperature control means for setting the temperature of the stripping solution tank to the resist stripping processing temperature during stripping processing and to the standby temperature during standby for stripping processing. Is equipped with.
【0009】このようなレジスト剥離装置は、剥離処理
時と剥離処理待機時とで剥離液槽の温度を調節すること
により、剥離液の蒸発を低減するとともに待機時の電力
消費を低減する。In such a resist stripping apparatus, the temperature of the stripping solution tank is adjusted during stripping processing and standby of stripping processing to reduce evaporation of stripping solution and power consumption during standby.
【0010】ここで、剥離処理温度は、100℃〜12
0℃であることが好ましい。The peeling treatment temperature is 100 ° C. to 12 ° C.
It is preferably 0 ° C.
【0011】また、上述した目的を達成するために、本
発明に係るレジスト剥離装置の制御方法は、レジスト被
膜が塗布された半導体ウェハの該レジスト被膜を剥離液
により剥離処理するレジスト剥離装置の制御方法であっ
て、剥離液を満たした剥離液槽の温度を、剥離処理する
剥離処理工程時にはレジスト剥離処理温度とし、剥離処
理待機時には待機温度とする温度制御工程を有する。In order to achieve the above-mentioned object, a method of controlling a resist stripping apparatus according to the present invention is a method of controlling a resist stripping apparatus for stripping a resist coating on a semiconductor wafer with a stripping solution. The method has a temperature control step in which the temperature of the stripping solution tank filled with the stripping solution is the resist stripping temperature during the stripping step of stripping and the standby temperature during the standby of stripping.
【0012】この制御方法によれば、剥離液槽の温度が
剥離処理時と剥離処理待機時とで調節されるため、剥離
液の蒸発が低減されるとともに待機時の電力消費が低減
される。According to this control method, since the temperature of the stripping solution tank is adjusted during the stripping process and when the stripping process is on standby, the evaporation of the stripping solution is reduced and the power consumption during standby is reduced.
【0013】[0013]
【発明の実施の形態】以下に、本発明の具体例について
図面を参照して詳細に説明する。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, specific examples of the present invention will be described in detail with reference to the drawings.
【0014】図1は、本発明の具体例として示すレジス
ト剥離装置を説明する図である。レジスト剥離装置1
は、剥離液浸漬部11と、リンス液浸漬部12と、アル
コール浸漬部13と、純水洗浄部14とから構成されて
いる。このレジスト剥離装置1によれば、表面にレジス
ト被膜が塗布された半導体ウェハ10を剥離液浸漬部1
1において剥離液槽内の剥離液中に一定時間浸漬させる
ことにより、この半導体ウェハ表面のレジスト被膜が剥
離される。FIG. 1 is a diagram for explaining a resist stripping apparatus as a specific example of the present invention. Resist stripping device 1
Is composed of a stripping solution immersion section 11, a rinse solution immersion section 12, an alcohol immersion section 13, and a pure water cleaning section 14. According to this resist stripping apparatus 1, the semiconductor wafer 10 having the surface coated with the resist film is removed by the stripping solution immersion section 1
In No. 1, the resist film on the surface of the semiconductor wafer is peeled off by immersing it in the peeling liquid in the peeling liquid tank for a certain time.
【0015】続いて、リンス液浸漬部12にて、半導体
ウェハ10をリンス液に浸漬し、さらにアルコール浸漬
部13においてアルコール液に浸漬し、最後に純水洗浄
部14において純水洗浄する。これにより、半導体ウェ
ハ10は、表面のレジスト被膜が完全に剥離された状態
となる。Then, the semiconductor wafer 10 is dipped in the rinse liquid in the rinse liquid immersion unit 12, further immersed in the alcohol liquid in the alcohol immersion unit 13, and finally purified water is cleaned in the pure water cleaning unit 14. As a result, the semiconductor wafer 10 is in a state where the resist coating on the surface is completely peeled off.
【0016】図2は、本具体例のレジスト剥離装置1に
おける剥離液浸漬部11の具体的な構成を示したもので
ある。剥離液浸漬部11は、剥離液21が満たされた剥
離液槽22と、剥離液を循環させる循環ポンプ23と、
温度センサ24と、剥離液槽を加熱する加熱器25と、
温度調節器26と、温度制御回路27とを備えている。
剥離液21としては、脱水処理されたアミン系剥離液を
用いる。FIG. 2 shows a specific structure of the stripping solution immersion section 11 in the resist stripping apparatus 1 of this specific example. The stripping solution immersion section 11 includes a stripping solution tank 22 filled with the stripping solution 21, a circulation pump 23 for circulating the stripping solution,
A temperature sensor 24 and a heater 25 for heating the stripping solution tank,
A temperature controller 26 and a temperature control circuit 27 are provided.
As the stripping solution 21, a dehydrated amine-based stripping solution is used.
【0017】温度制御回路27は、温度調節器26を制
御して、剥離液槽22内の剥離液の温度を、レジスト剥
離処理する剥離処理工程時にはレジスト剥離処理温度と
し、剥離処理待機時には待機温度に調節している。ま
た、温度制御回路27は、未処理時間によって剥離処理
温度と待機温度に調節している。The temperature control circuit 27 controls the temperature controller 26 to set the temperature of the stripping solution in the stripping solution tank 22 to the resist stripping processing temperature during the stripping processing step of resist stripping processing, and to the standby temperature during the stripping processing standby. Is adjusted to. Further, the temperature control circuit 27 adjusts the stripping processing temperature and the standby temperature depending on the unprocessed time.
【0018】このときの剥離処理温度とは、100℃〜
120℃が好ましい。100℃以下であると、剥離液に
水分が混入し、剥離液の液性がアルカリ性に変化するこ
とに起因して半導体ウェハ10上のアルミニウム配線パ
ターンが変質劣化し、断線や腐食が発生するおそれがあ
るからである。また、剥離液の液温が120℃を越える
と、剥離液の蒸発量が増加するとともに、剥離液の引火
性が高まるからである。The peeling treatment temperature at this time is from 100 ° C to
120 ° C. is preferred. When the temperature is 100 ° C. or lower, moisture may be mixed in the stripping solution, and the aluminum wiring pattern on the semiconductor wafer 10 may deteriorate and deteriorate due to the change in the liquidity of the stripping solution to alkaline, which may cause disconnection or corrosion. Because there is. Further, when the temperature of the stripping solution exceeds 120 ° C., the evaporation amount of the stripping solution increases and the flammability of the stripping solution increases.
【0019】本具体例では、剥離処理温度は、レジスト
剥離処理の効率を考慮して、特に120℃に設定し、待
機温度は、100℃に設定している。また、未処理時間
を例えば10分に設定し、剥離装置1の主電源OFF
後、10分後に待機温度100℃に設定され、剥離装置
1の主電源ON後、剥離処理温度120℃に設定され
る。 このように、レジスト剥離処理時と剥離処理待機
時とで剥離液の液温を調節することにより、剥離処理待
機時の剥離液及び電力消費が低減できる。In this example, the stripping temperature is set to 120 ° C., and the standby temperature is set to 100 ° C., considering the efficiency of the resist stripping process. In addition, the unprocessed time is set to, for example, 10 minutes, and the main power of the peeling device 1 is turned off.
After 10 minutes, the standby temperature is set to 100 ° C., the main power of the peeling apparatus 1 is turned on, and then the peeling processing temperature is set to 120 ° C. Thus, by adjusting the liquid temperature of the stripping solution during the resist stripping process and during the stripping process standby, the stripping solution and power consumption during the stripping process standby can be reduced.
【0020】なお、本発明は上述した実施の形態のみに
限定されるものではなく、本発明の要旨を逸脱しない範
囲において種々の変更が可能であることは勿論である。
例えば、剥離液浸漬部、リンス液浸漬部、アルコール浸
漬部、純水洗浄部は、それぞれ一槽に限らず複数槽にし
てもよい。この場合、レジスト被膜が確実に剥離され
る。The present invention is not limited to the above-described embodiments, and it goes without saying that various modifications can be made without departing from the gist of the present invention.
For example, the stripping solution immersion section, the rinse solution immersion section, the alcohol immersion section, and the pure water cleaning section are not limited to one tank, but may be a plurality of tanks. In this case, the resist film is reliably peeled off.
【0021】[0021]
【発明の効果】以上詳細に説明したように、本発明に係
るレジスト剥離装置によれば、レジスト剥離処理時と剥
離処理待機時とで剥離液槽の温度を調節することができ
るため、レジスト剥離液の蒸発による消耗を低減すると
ともに待機時の無駄な電力消費を低減することができ
る。As described above in detail, according to the resist stripping apparatus according to the present invention, the temperature of the stripping solution tank can be adjusted during the resist stripping process and during the stripping process standby. It is possible to reduce consumption due to evaporation of the liquid and reduce unnecessary power consumption during standby.
【0022】また、本発明に係るレジスト剥離装置の制
御方法によれば、剥離液槽の温度が剥離処理時と剥離処
理待機時とで調節できるため、レジスト剥離液の蒸発に
よる消耗を低減するとともに待機時の無駄な電力消費を
低減することができる。Further, according to the method of controlling the resist stripping apparatus according to the present invention, the temperature of the stripping solution tank can be adjusted during the stripping process and during the stripping process standby, so that the consumption of the resist stripping solution due to evaporation can be reduced. It is possible to reduce unnecessary power consumption during standby.
【図1】本発明の具体例として示すレジスト剥離装置に
よるレジスト剥離工程を説明する模式図である。FIG. 1 is a schematic diagram illustrating a resist stripping process by a resist stripping apparatus shown as a specific example of the present invention.
【図2】本発明の具体例として示すレジスト剥離装置に
おける剥離液浸漬部を説明する概略図である。FIG. 2 is a schematic diagram illustrating a stripping solution immersion section in a resist stripping apparatus as a specific example of the present invention.
1 レジスト剥離装置 10 半導体ウェハ 11 剥離液浸漬部 12 リンス液浸漬部 13 アルコール浸漬部 14 純水洗浄部 21 剥離液 22 剥離液槽 23 循環ポンプ 24 温度センサ 25 加熱器 26 温度調節器 27 温度制御回路 1 Resist stripping device 10 Semiconductor wafer 11 Stripping solution immersion part 12 Rinse solution immersion part 13 Alcohol immersion part 14 Pure water cleaning section 21 Stripper 22 Stripping liquid tank 23 Circulation pump 24 Temperature sensor 25 heater 26 Temperature controller 27 Temperature control circuit
Claims (3)
の該レジスト被膜を剥離液により剥離処理するレジスト
剥離装置において、 上記剥離液を満たした剥離液槽と、 上記剥離液の温度を調節する温度調節手段と、 上記剥離液槽の温度を剥離処理時にはレジスト剥離処理
温度とし、剥離処理待機時には待機温度とする温度制御
手段とを備えることを特徴とするレジスト剥離装置。1. A resist stripping apparatus for stripping a resist coating of a semiconductor wafer coated with a resist coating with a stripping solution, comprising: a stripping solution tank filled with the stripping solution; and temperature control for adjusting the temperature of the stripping solution. A resist stripping apparatus comprising: means for controlling the temperature of the stripping solution tank to be a resist stripping processing temperature during stripping processing; and a temperature control means for maintaining a standby temperature during stripping processing standby.
℃であることを特徴とする請求項1記載のレジスト剥離
装置。2. The peeling treatment temperature is 100 ° C. to 120 ° C.
The resist stripping apparatus according to claim 1, wherein the resist stripping apparatus has a temperature of ° C.
の該レジスト被膜を剥離液により剥離処理するレジスト
剥離装置の制御方法であって、 上記剥離液を満たした剥離液槽の温度を、上記剥離処理
する剥離処理工程時にはレジスト剥離処理温度とし、剥
離処理待機時には待機温度とする温度制御工程を有する
ことを特徴とするレジスト剥離装置の制御方法。3. A method of controlling a resist stripping apparatus for stripping a resist coating of a semiconductor wafer coated with a resist coating with a stripping solution, wherein the temperature of a stripping solution tank filled with the stripping solution is set to the stripping processing. A method of controlling a resist stripping apparatus, comprising a temperature control step of setting a resist stripping processing temperature during a stripping processing step and a standby temperature during a stripping processing standby state.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002086876A JP2003282522A (en) | 2002-03-26 | 2002-03-26 | Resist-peeling device and method of controlling the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002086876A JP2003282522A (en) | 2002-03-26 | 2002-03-26 | Resist-peeling device and method of controlling the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2003282522A true JP2003282522A (en) | 2003-10-03 |
Family
ID=29233317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002086876A Pending JP2003282522A (en) | 2002-03-26 | 2002-03-26 | Resist-peeling device and method of controlling the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2003282522A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105593971A (en) * | 2013-09-25 | 2016-05-18 | 芝浦机械电子株式会社 | Substrate treatment device, method for separating bonded substrate, and method for removing adhseive |
-
2002
- 2002-03-26 JP JP2002086876A patent/JP2003282522A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105593971A (en) * | 2013-09-25 | 2016-05-18 | 芝浦机械电子株式会社 | Substrate treatment device, method for separating bonded substrate, and method for removing adhseive |
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