JP2003273441A - Heat sink, and semiconductor laser device and semiconductor laser stack device using it - Google Patents
Heat sink, and semiconductor laser device and semiconductor laser stack device using itInfo
- Publication number
- JP2003273441A JP2003273441A JP2002072731A JP2002072731A JP2003273441A JP 2003273441 A JP2003273441 A JP 2003273441A JP 2002072731 A JP2002072731 A JP 2002072731A JP 2002072731 A JP2002072731 A JP 2002072731A JP 2003273441 A JP2003273441 A JP 2003273441A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- semiconductor laser
- flat plate
- layer
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、本発明は、半導体
デバイス等の発熱体の放熱に用いられるヒートシンク並
びにこれを用いた半導体レーザ装置及び半導体レーザス
タック装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat sink used for radiating heat from a heating element such as a semiconductor device, a semiconductor laser device using the same, and a semiconductor laser stack device.
【０００２】[0002]
【従来の技術】半導体デバイス等の多量の熱を発生する
発熱体の冷却に用いられるヒートシンクとして、例え
ば、ＷＯ００／１１７１７号公報に開示されているよう
な、複数の銅製の平板状部材を組み合せることにより形
成した冷却水路を有し、該冷却水路内に冷却水を還流さ
せる構成有するヒートシンクが知られている。2. Description of the Related Art As a heat sink used for cooling a heating element that generates a large amount of heat such as a semiconductor device, a plurality of flat plate members made of copper as disclosed in, for example, WO00 / 11717 are combined. There is known a heat sink having a cooling water channel formed by the above and having a configuration in which cooling water is circulated in the cooling water channel.
【０００３】上記ヒートシンクの冷却水路は、加圧され
た冷却水が供給される供給水路と、冷却水を排出する排
出水路と、供給水路に供給された冷却水を排出水路内に
噴出させる噴出孔とを備えて構成される。上記噴出孔か
ら高圧で噴出された冷却水は、噴出孔の真上にあたる冷
却水路の上部に載置された発熱体と熱交換して該発熱体
を冷却する。The cooling water passage of the heat sink has a supply water passage to which pressurized cooling water is supplied, a discharge water passage for discharging the cooling water, and an ejection hole for ejecting the cooling water supplied to the supply water passage into the discharge water passage. And is configured. The cooling water jetted at high pressure from the jet holes exchanges heat with the heating element placed on the upper part of the cooling water channel just above the jet hole to cool the heating element.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記公
報に記載されたヒートシンクに代表される従来のヒート
シンクにおいては、以下に示す冷却水路の腐食を充分に
防止することができず、長期にわたり冷却すべき発熱体
を効率よくかつ安定的に冷却することができないという
問題があった。However, in the conventional heat sink represented by the heat sink described in the above publication, it is not possible to sufficiently prevent the corrosion of the cooling water passage described below, and it is necessary to cool it for a long period of time. There is a problem that the heating element cannot be cooled efficiently and stably.
【０００５】すなわち、ヒートシンクの冷却水路内を流
通する冷却水は、空気中の二酸化炭素の溶解により定常
的にｐHが７未満となっており、このような酸性の条件
の下では、下記式（１）及び（２）で表される銅の酸化
反応と、溶存酸素の還元反応等の反応が進行して、冷却
水路の内壁面の腐食が進行してしまう。腐食が進行する
と水漏れや漏電によるショート等の問題が発生する。
Cu → Cu2+ + 2e-…（１）
O2 + 4H+ + 4e- → 2H2O…（２）That is, the cooling water flowing through the cooling water passage of the heat sink has a constant pH of less than 7 due to the dissolution of carbon dioxide in the air. Under such acidic conditions, the following formula ( The oxidation reaction of copper represented by 1) and (2) and the reaction such as the reduction reaction of dissolved oxygen proceed, so that the corrosion of the inner wall surface of the cooling water path progresses. When corrosion progresses, problems such as water leakage and short circuit due to electric leakage occur. Cu → Cu 2+ + 2e - ... (1) O 2 + 4H + + 4e - → 2H 2 O ... (2)
【０００６】例えば、半導体レーザ素子が一次元的に多
数配列した構成を有する半導体レーザアレイを複数積層
してスタック構造とし、高出力化を図る場合には、複数
のヒートシンクが積層された各半導体レーザアレイの間
にそれぞれ挿入されるようにして配置される。For example, when a plurality of semiconductor laser arrays each having a structure in which a large number of semiconductor laser elements are arranged one-dimensionally are stacked to form a stack structure and a high output is achieved, each semiconductor laser in which a plurality of heat sinks are stacked is stacked. The arrays are arranged so as to be inserted between the arrays.
【０００７】この場合、各ヒートシンクは各半導体レー
ザアレイの冷却を行うだけでなく、各各半導体レーザア
レイの間で電気的導通路の役割も果すため、各半導体レ
ーザアレイの作動中にはヒートシンクにも電界が印加さ
れるので、上記のような腐食反応はよりいっそう進行す
ることになる。更に、この場合、冷却水路の腐食により
生成したCu2+イオンやその他の金属イオンが不純物とし
て冷却水中に存在すると、電界の印加によりこれらが冷
却水路の内壁面に金属として析出し、水路の目詰まりを
起す場合もある。In this case, each heat sink not only cools each semiconductor laser array, but also serves as an electrical conduction path between each semiconductor laser array. Also, since the electric field is applied, the above-mentioned corrosion reaction further progresses. Furthermore, in this case, if Cu 2+ ions and other metal ions generated by corrosion of the cooling water channel are present as impurities in the cooling water, they are deposited as metal on the inner wall surface of the cooling water channel by the application of an electric field, and the It may also cause a blockage.
【０００８】冷却水と空気との接触を完全に防止するこ
とは困難であるため、上記の問題に対して、例えば、特
開平５−１２１６１１号公報には、Ｎｉ又はＳｂからな
るめっき膜を形成することにより冷却水路の腐食の防止
を意図したヒートシンクが提案されている。しかし、本
発明者らは、特開平５−１２１６１１号公報に記載のヒ
ートシンクであっても、長期にわたって使用した場合
に、Ｎｉの酸化又はＳｂの酸化反応と上記の式（２）の
酸素還元反応等が進行してＮｉ又はＳｂからなるめっき
膜の腐食が進行し、冷却水路の腐食を充分に防止するこ
とができないことを見出した。Since it is difficult to completely prevent the contact between the cooling water and the air, in order to solve the above problem, for example, in Japanese Patent Laid-Open No. 5-121611, a plating film made of Ni or Sb is formed. Therefore, a heat sink intended to prevent corrosion of the cooling water passage has been proposed. However, the inventors of the present invention have found that even if the heat sink described in JP-A-5-121611 is used for a long period of time, the oxidation reaction of Ni or Sb and the oxygen reduction reaction of the above formula (2) are performed. It has been found that the corrosion of the plating film made of Ni or Sb progresses due to the progress of the above, and the corrosion of the cooling water channel cannot be sufficiently prevented.
【０００９】本発明は、上記従来技術の有する課題に鑑
みてなされたものであり、長期にわたり使用しても冷却
すべき発熱体を安定的に冷却することのできる長寿命の
ヒートシンク並びにこれを用いた半導体レーザ装置及び
半導体レーザスタック装置を提供することを目的とす
る。The present invention has been made in view of the above problems of the prior art, and a long-life heat sink capable of stably cooling a heating element to be cooled even after long-term use and a heat sink using the same. Another object of the present invention is to provide a semiconductor laser device and a semiconductor laser stack device.
【００１０】[0010]
【課題を解決するための手段】本発明者らは、上記目的
を達成すべく鋭意研究を重ねた結果、ヒートシンクの冷
却水路の内壁面に、比較的大きな正の値の標準酸化還元
電位を有しておりかつ式（２）で表される酸素還元反応
に対する比較的大きな過電圧を有する特定の金属を主成
分とする膜をコーティングすることで、酸性の冷却水を
使用した場合であっても、上記の腐食反応の進行を十分
に抑制できることを見出した。As a result of intensive studies to achieve the above object, the present inventors have found that the inner wall surface of the cooling water passage of the heat sink has a relatively large standard redox potential. Even when acidic cooling water is used by coating a film mainly composed of a specific metal having a relatively large overvoltage with respect to the oxygen reduction reaction represented by the formula (2). It was found that the above corrosion reaction can be sufficiently suppressed.
【００１１】更に、本発明者らは、単に上記の金属の膜
をコーティングするだけでは、ヒートシンクを製造する
際の熱処理を施される際や高温の発熱源の冷却に用いら
れる際に、この膜を構成する金属原子が水路の内壁面
（Cu表面）からCuバルク中に熱拡散し、膜が消失してし
まうことを見出した。そして、本発明者らは、これにつ
いて検討し、特定の金属を主成分とする別の膜を、水路
の内壁面と上述の大きな正の値の標準酸化還元電位を有
する特定の金属を主成分とする膜との間に更に配置する
ことにより、上記の熱拡散を充分に防止できることを見
出し、本発明に到達した。Further, the inventors of the present invention simply coated the above-mentioned metal film when the film was subjected to heat treatment for manufacturing a heat sink or used for cooling a high temperature heat source. It was found that the metal atoms that compose the film are thermally diffused from the inner wall surface (Cu surface) of the channel into the Cu bulk, and the film disappears. Then, the inventors of the present invention examined this, and provided another membrane containing a specific metal as a main component with a specific metal having an inner wall surface of the water channel and the above-described large positive standard oxidation-reduction potential as a main component. The inventors have found that the above-mentioned thermal diffusion can be sufficiently prevented by further arranging it between the film and the film.
【００１２】すなわち、本発明は、略直方体状の銅製部
材の内部に形成されており、部材の外部から水を含む流
体を流入させる流入口と、該流体を部材の外部に流出さ
せる流出口とを有する少なくとも１本の流体流路を有し
ており、部材の外壁面の所定領域に熱的接触を保つ状態
で配置される冷却すべき発熱体と少なくとも１本の流体
流路内を流通する流体との間で熱交換をさせることによ
り発熱体を冷却するヒートシンクであって、流体が流通
する流体流路の内壁面には、該内壁面を被覆して該内壁
面と流体との接触を防止する膜状の接触防止層が形成さ
れており、接触防止層は、流体に接触する第１の層と、
該第１の層と内壁面との間に配置される第２の層とを有
しており、第１の層がＡｕ、Ａｕ合金、Ａｇ又はＡｇ合
金を主成分として構成されており、第２の層がＮｉ、Ｍ
ｏ、Ｗ又はＴｉを主成分として構成されていること、を
特徴とするヒートシンクを提供する。That is, the present invention is formed inside a substantially rectangular parallelepiped member made of copper, and has an inlet for introducing a fluid containing water from the outside of the member and an outlet for letting the fluid out of the member. Having at least one fluid flow path, and flowing in at least one fluid flow path with a heating element to be cooled arranged in a predetermined region of the outer wall surface of the member while maintaining thermal contact A heat sink for cooling a heating element by exchanging heat with a fluid, wherein an inner wall surface of a fluid passage through which the fluid flows covers the inner wall surface to prevent contact between the inner wall surface and the fluid. A film-shaped contact-preventing layer for preventing the contact is formed, and the contact-preventing layer includes a first layer that comes into contact with a fluid,
A second layer disposed between the first layer and the inner wall surface, wherein the first layer is mainly composed of Au, Au alloy, Ag or Ag alloy, and The second layer is Ni, M
Provided is a heat sink characterized by comprising o, W or Ti as a main component.
【００１３】ここで、本発明において、第１の層及び第
２の層が「Ｘを主成分として構成されている」とは、各
層中のＸの含有率が３０原子％以上であることを示す。
なお、「Ｘ」は、Ａｕ、Ａｕ合金、Ａｇ、Ａｇ合金、Ｎ
ｉ、Ｍｏ、Ｗ又はＴｉを示す。In the present invention, the expression "the first layer and the second layer are mainly composed of X" means that the content of X in each layer is 30 atomic% or more. Show.
Note that “X” means Au, Au alloy, Ag, Ag alloy, N
i, Mo, W or Ti is shown.
【００１４】上記の接触防止層の第１の層は、酸性の水
等の液中においても酸化されにくいＡｕ、Ａｕ合金、Ａ
ｇ又はＡｇ合金を主成分とするので充分に流体流路の内
壁面の腐食を防止することができる。また、流体流路の
内壁面と第１の層との間に第２の層を配置することによ
り、ヒートシンクの製造時や作動時に高温の雰囲気下に
置かれても、第１の層を構成する金属元素が流体流路の
内部（Ｃｕバルク）への熱拡散を充分に防止することが
できる。The first layer of the contact prevention layer is Au, Au alloy, A which is not easily oxidized even in a liquid such as acidic water.
Since g or Ag alloy is the main component, corrosion of the inner wall surface of the fluid channel can be sufficiently prevented. Further, by disposing the second layer between the inner wall surface of the fluid flow path and the first layer, the first layer is configured even when placed in a high temperature atmosphere during manufacturing or operation of the heat sink. It is possible to sufficiently prevent heat diffusion of the metal element to the inside (Cu bulk) of the fluid channel.
【００１５】これは、第２の層は、高温の雰囲気下に置
かれても主成分となる金属原子が流体流路の内部へ熱拡
散せずに膜状の形状を保持することができ、然も、この
第２の層に対して第１の層の主成分となる金属原子の熱
拡散が充分に防止されるためであると考えられる。従っ
て、本発明のヒートシンクによれば、長期にわたり使用
しても冷却すべき発熱体を安定的に冷却することができ
る。This is because the second layer can maintain a film-like shape even when placed in a high temperature atmosphere, without the metal atoms as the main component thermally diffusing into the inside of the fluid channel. However, it is considered that this is because the thermal diffusion of the metal atoms, which are the main components of the first layer, is sufficiently prevented in the second layer. Therefore, according to the heat sink of the present invention, it is possible to stably cool the heating element to be cooled even if it is used for a long period of time.
【００１６】また、例えば、多くの場合、ヒートシンク
は流体流路を画成するための溝などを形成した複数の銅
製の部材を組み合せて接合することにより製造される。
その接合の手法としては部材を高温状態で直接はり合せ
て接合（拡散接合）する。その他の接合の手法として
は、接着剤による接合、半田接合、ネジ止めによる接合
があるが、ヒートシンクを上述の導体レーザアレイスタ
ック装置の冷却に用いる場合、接着剤による接合では充
分な導電性を得ることができないという欠点があり、半
田接合では半田厚を均等に制御することが困難で、半田
厚のばらつきがあると電流が複数の半導体レーザアレイ
のうちの特定のアレイに集中してしまうという欠点があ
り、ネジ止めによる接合の場合にはヒートシンクの小型
化に限界があるという欠点があった。Further, for example, in many cases, the heat sink is manufactured by combining and joining a plurality of copper members each having a groove or the like for defining a fluid flow path.
As a joining method, the members are directly bonded and joined (diffusion joining) in a high temperature state. Other joining methods include joining by an adhesive, solder joining, and joining by screwing, but when the heat sink is used for cooling the above-mentioned conductor laser array stack device, joining by an adhesive obtains sufficient conductivity. However, it is difficult to evenly control the solder thickness in solder bonding, and if there is a variation in the solder thickness, the current concentrates on a specific array among multiple semiconductor laser arrays. However, in the case of joining by screwing, there is a drawback that there is a limit to miniaturization of the heat sink.
【００１７】これに対し、本発明のヒートシンクによれ
ば、上記の拡散接合の手法を採用しながら、耐腐食の極
めて高い流体流路を構成することができる。また、上記
の拡散接合の手法を採用することができるため、本発明
のヒートシンクは小型化を図ることも容易にできる。On the other hand, according to the heat sink of the present invention, it is possible to construct a fluid passage having extremely high corrosion resistance while adopting the above-mentioned diffusion bonding method. Further, since the above diffusion bonding method can be adopted, the heat sink of the present invention can be easily miniaturized.
【００１８】また、本発明は、上述の本発明のヒートシ
ンクと、ヒートシンクの第２の平板状部材の上面に載置
された半導体レーザとを備えることを特徴とする半導体
レーザ装置を提供する。このように、上述の長寿命の本
発明のヒートシンクを備えた半導体レーザ装置半導体レ
ーザアレイの冷却効率の変動を十分に防止できるので、
長期にわたり安定した出力を得ることができる。また、
上述のヒートシンクを用いることで、半導体レーザ装置
の小型化が可能となる。Further, the present invention provides a semiconductor laser device comprising the above-mentioned heat sink of the present invention and a semiconductor laser mounted on the upper surface of the second flat plate-shaped member of the heat sink. As described above, since it is possible to sufficiently prevent the fluctuation of the cooling efficiency of the semiconductor laser device semiconductor laser array including the above-described long-life heat sink of the present invention,
A stable output can be obtained over a long period of time. Also,
By using the above heat sink, the semiconductor laser device can be downsized.
【００１９】また、本発明は、第１のヒートシンクと、
第２のヒートシンクと、第１の半導体レーザと、第２の
半導体レーザとを備え、第１のヒートシンク及び第２の
ヒートシンクは、それぞれ上述の本発明のヒートシンク
であり、第１の半導体レーザは、第１のヒートシンクの
第２の平板状部材の上面と、第２のヒートシンクの第１
の平板状部材の下面との間に配置されており、第２の半
導体レーザは、第２のヒートシンクの第２の平板状部材
の上面に載置されていること、を特徴とする半導体レー
ザスタック装置を提供する。The present invention also includes a first heat sink,
A second heat sink, a first semiconductor laser, and a second semiconductor laser are provided, and the first heat sink and the second heat sink are the above-described heat sinks of the present invention, and the first semiconductor laser is The upper surface of the second flat plate-shaped member of the first heat sink and the first upper surface of the second heat sink.
Of the second flat plate-shaped member, and the second semiconductor laser is placed on the upper surface of the second flat plate-shaped member of the second heat sink. Provide a device.
【００２０】このように、上述の長寿命の本発明のヒー
トシンクを備えた半導体レーザスタック装置は、半導体
レーザアレイの冷却効率の変動を十分に防止できるの
で、長期にわたり安定した出力を得ることができる。ま
た、上述のヒートシンクを用いることで、半導体レーザ
スタック装置の小型化が可能となる。As described above, the semiconductor laser stack device provided with the above-described long-life heat sink of the present invention can sufficiently prevent the fluctuation of the cooling efficiency of the semiconductor laser array, so that a stable output can be obtained for a long period of time. . Further, by using the heat sink described above, the semiconductor laser stack device can be downsized.
【００２１】[0021]
【発明の実施の形態】以下、図面を参照して本発明の好
適な実施形態について詳細に説明する。なお、図中同一
又は相当部分には同一符号を付することとする。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. The same or corresponding parts in the drawings will be denoted by the same reference numerals.
【００２２】図１は、本発明の半導体レーザスタック装
置の好適な一実施形態の基本構成を示す斜視図である。
まず、本実施形態に係る半導体レーザスタック装置の構
成について説明する。本実施形態にかかる半導体レーザ
スタック装置１は、図１に示すように、３つの半導体レ
ーザ２ａ〜２ｃ、２つの銅板３ａ及び３ｂ、２つのリー
ド板４ａ及び４ｂ、供給管５、排出管６、４つの絶縁部
材７ａ〜７ｄ、及び、３つのヒートシンク１０ａ〜１０
ｃを備えて構成される。FIG. 1 is a perspective view showing the basic structure of a preferred embodiment of the semiconductor laser stack device of the present invention.
First, the configuration of the semiconductor laser stack device according to this embodiment will be described. As shown in FIG. 1, the semiconductor laser stack device 1 according to the present embodiment includes three semiconductor lasers 2a to 2c, two copper plates 3a and 3b, two lead plates 4a and 4b, a supply pipe 5, a discharge pipe 6, Four insulating members 7a-7d and three heat sinks 10a-10
It is configured with c.
【００２３】以下、各構成要素について説明する。尚、
説明の便宜上、図１のｚ軸正方向を上、ｚ軸負方向を下
として説明する。Each constituent element will be described below. still,
For convenience of explanation, the z-axis positive direction in FIG. 1 will be described as the upper side and the z-axis negative direction as the lower side.
【００２４】半導体レーザ２ａ〜２ｃは、所定方向（ｙ
軸方向）に配列された複数のレーザ出射点を有する。半
導体レーザ２ａは、ヒートシンク１０ａの上面（後述の
上側平板部材１６の上面。以下同じ。）とヒートシンク
１０ｂの下面（後述の下側平板部材１２の下面。以下同
じ。）との間に配置され、半導体レーザ２ｂは、ヒート
シンク１０ｂの上面とヒートシンク１０ｃの下面との間
に配置され、半導体レーザ２ｃは、ヒートシンク１０ｃ
の上面に載置されている。The semiconductor lasers 2a to 2c are arranged in a predetermined direction (y
It has a plurality of laser emission points arranged in the axial direction). The semiconductor laser 2a is disposed between the upper surface of the heat sink 10a (the upper surface of the upper flat plate member 16 described later. The same applies hereinafter) and the lower surface of the heat sink 10b (the lower surface of the lower flat plate member 12 described below. The same applies hereinafter). The semiconductor laser 2b is arranged between the upper surface of the heat sink 10b and the lower surface of the heat sink 10c, and the semiconductor laser 2c is the heat sink 10c.
Is placed on the upper surface of.
【００２５】ここで、各半導体レーザ２ａ〜２ｃの複数
のレーザ出射点は、ヒートシンク１０ａ〜１０ｃの上側
平板部材１６の上面に略垂直な同一平面上であり、か
つ、該平面とヒートシンク１０ａ〜１０ｃの上側平板部
材１６の上面との交線に略平行な直線上にそれぞれ配列
されている。また、半導体レーザ２ａ〜２ｃそれぞれの
複数のレーザ出射点を含む出射面と、ヒートシンク１０
ａ〜１０ｃのそれぞれが有する一つの側面とは、略同一
平面上に配置されている。Here, the plurality of laser emission points of the semiconductor lasers 2a to 2c are on the same plane substantially perpendicular to the upper surface of the upper flat plate member 16 of the heat sinks 10a to 10c, and the planes and the heat sinks 10a to 10c. Are arranged on straight lines substantially parallel to the line of intersection with the upper surface of the upper flat plate member 16. In addition, an emission surface including a plurality of laser emission points of each of the semiconductor lasers 2 a to 2 c and the heat sink 10.
One side surface of each of a to 10c is arranged on substantially the same plane.
【００２６】半導体レーザ２ａの下面は、銅板３ａを介
してリード板４ａに電気的に接続されているとともに、
半導体レーザ２ｃの上面は、銅板３ｂを介してリード板
４ｂに電気的に接続されている。ここで、リード板４ａ
とリード板４ｂとの間に電圧を印加することで、半導体
レーザ２ａ〜２ｃからレーザ光を出力させることが可能
となる。The lower surface of the semiconductor laser 2a is electrically connected to the lead plate 4a via the copper plate 3a, and
The upper surface of the semiconductor laser 2c is electrically connected to the lead plate 4b via the copper plate 3b. Here, the lead plate 4a
By applying a voltage between the lead plate 4b and the lead plate 4b, it becomes possible to output laser light from the semiconductor lasers 2a to 2c.
【００２７】供給管５、排出管６のそれぞれは、ヒート
シンク１０ａ〜１０ｃを貫通して設けられている。より
詳細には、供給管５は、ヒートシンク１０ａ〜１０ｃそ
れぞれに形成された流入口４４（詳細は後述）と接続さ
れており、排出管６は、ヒートシンク１０ａ〜１０ｃそ
れぞれに形成された流出口４６（詳細は後述）と接続さ
れている。従って、供給管５からヒートシンク１０ａ〜
１０ｃに対して、冷却水などの流体を供給することが可
能となり、また、ヒートシンク１０ａ〜１０ｃから排出
管６に対して上記冷却水を流出させることが可能とな
る。Each of the supply pipe 5 and the discharge pipe 6 is provided so as to penetrate the heat sinks 10a to 10c. More specifically, the supply pipe 5 is connected to an inflow port 44 (details will be described later) formed in each of the heat sinks 10a to 10c, and the discharge pipe 6 is connected to an outflow port 46 formed in each of the heat sinks 10a to 10c. (Details will be described later). Therefore, from the supply pipe 5 to the heat sinks 10a ...
A fluid such as cooling water can be supplied to 10c, and the cooling water can be discharged from the heat sinks 10a to 10c to the discharge pipe 6.
【００２８】ヒートシンク１０ａの下面側、ヒートシン
ク１０ａの上面とヒートシンク１０ｂの下面との間隙、
ヒートシンク１０ｂの上面とヒートシンク１０ｃの下面
との間隙、ヒートシンク１０ｃの上面側それぞれには、
供給管５及び排出管６を囲むように、ゴム製の絶縁部材
７ａ，７ｂ，７ｃ，７ｄが設けられている。絶縁部材７
ａ〜７ｄは、各ヒートシンク間の絶縁を確保するととも
に、冷却水の漏洩を防止する役割を果たす。The lower surface of the heat sink 10a, the gap between the upper surface of the heat sink 10a and the lower surface of the heat sink 10b,
The gap between the upper surface of the heat sink 10b and the lower surface of the heat sink 10c, and the upper surface side of the heat sink 10c,
Insulating members 7a, 7b, 7c, 7d made of rubber are provided so as to surround the supply pipe 5 and the discharge pipe 6. Insulation member 7
The components a to 7d ensure the insulation between the heat sinks and prevent the leakage of cooling water.
【００２９】次に、ヒートシンク１０ａ〜１０ｃについ
て説明する。なお、ヒートシンク１０ａ〜１０ｃそれぞ
れは同一の構成を有するため、以下、ヒートシンク１０
ａについてのみ説明する。Next, the heat sinks 10a to 10c will be described. Since each of the heat sinks 10a to 10c has the same configuration, the heat sink 10 will be described below.
Only a will be described.
【００３０】図２は、図１に示す半導体レーザスタック
装置１に搭載されるヒートシンク１０ａの基本構成を示
す分解斜視図である。また、図３は、図２に示すヒート
シンク１０ａを上方（図１のＺ軸方向）から見た場合の
正面透視図である。更に、図４は、図２のIV−IV線に沿
ってみた場合のヒートシンク１０ａの内部の基本構成を
示す断面図である。また、図５は、図２のV−V線に沿っ
てみた場合のヒートシンク１０ａの内部の基本構成を示
す断面図である。更に、図６は、図２のVI−VI線に沿っ
てみた場合のヒートシンク１０ａの内部の基本構成を示
す断面図である。FIG. 2 is an exploded perspective view showing the basic structure of the heat sink 10a mounted on the semiconductor laser stack device 1 shown in FIG. 3 is a front perspective view of the heat sink 10a shown in FIG. 2 as viewed from above (Z-axis direction in FIG. 1). Further, FIG. 4 is a cross-sectional view showing the basic configuration inside the heat sink 10a when viewed along the line IV-IV in FIG. Further, FIG. 5 is a cross-sectional view showing the basic configuration of the inside of the heat sink 10a when viewed along the line VV in FIG. Further, FIG. 6 is a cross-sectional view showing the basic structure of the inside of the heat sink 10a when viewed along the line VI-VI in FIG.
【００３１】ヒートシンク１０は、図２に示すように、
下側平板部材１２（第１の平板部材）、中間平板部材１
４（仕切り板）、上側平板部材１６（第２の平板部材）
を順次積層し、接触面を拡散接合法を用いて接合して形
成されている。The heat sink 10, as shown in FIG.
Lower flat plate member 12 (first flat plate member), intermediate flat plate member 1
4 (partition plate), upper flat plate member 16 (second flat plate member)
Are sequentially laminated and the contact surfaces are joined together by using a diffusion joining method.
【００３２】下側平板部材１２は約４００μｍ程度の厚
さを有する銅製の平板で、２つの貫通口１８，２０を有
している。下側平板部材１２の上面（中間平板部材１４
と接触する面）側には、深さが約２００μｍの流入水路
用溝部２２（第１の溝部）が形成されている。流入水路
用溝部２２は、一方の端部側が上記貫通口１８につなが
っており、他方の端部側は下側平板部材１２の幅方向
（図１のｙ軸方向）に拡がっている。また、流入水路用
溝部２２は、ヒートシンク１０ａ内を流れる冷却水の流
動抵抗を小さくし、よどみを少なくするため、隅部２２
ａが曲面形状となっている。ここで、流入水路用溝部２
２は、下側平板部材１２の上面をエッチングすることに
よって形成されている。The lower flat plate member 12 is a copper flat plate having a thickness of about 400 μm and has two through holes 18 and 20. The upper surface of the lower flat plate member 12 (the intermediate flat plate member 14
An inflow channel groove portion 22 (first groove portion) having a depth of about 200 μm is formed on the surface (contact surface) side. One end side of the inflow channel groove 22 is connected to the through hole 18, and the other end side is expanded in the width direction of the lower flat plate member 12 (y-axis direction in FIG. 1). In addition, the inflow channel groove 22 reduces the flow resistance of the cooling water flowing in the heat sink 10a and reduces the stagnation.
a has a curved shape. Here, the inflow channel groove 2
2 is formed by etching the upper surface of the lower flat plate member 12.
【００３３】上側平板部材１６も約４００μｍ程度の厚
さを有する銅製の平板で、下側平板部材１２の貫通口１
８，２０それぞれに対応する位置に、２つの貫通口２
６，２８を有している。上側平板部材１６の下面（中間
平板部材１４と接触する面）側には、深さが約２００μ
ｍの流出水路用溝部３０（第２の溝部）が形成されてい
る。流出水路用溝部３０は、一方の端部側が上記貫通口
２８につながっており、他方の端部側は上側平板部材１
６の幅方向に拡がっている。ここで、流出水路用溝部３
０の少なくとも一部は、下側平板部材１２に形成された
流入水路用溝部２２と重なる部分（図２の斜線部）に形
成されている。また、流出水路用溝部３０は、ヒートシ
ンク１０ａ内を流れる冷却水の流動抵抗を小さくし、よ
どみを少なくするため、隅部３０ａが曲面形状となって
いる。ここで、流出水路用溝部３０は、上側平板部材１
６の下面をエッチングすることによって形成されてい
る。The upper flat plate member 16 is also a copper flat plate having a thickness of about 400 μm, and the through hole 1 of the lower flat plate member 12 is formed.
Two through holes 2 are provided at positions corresponding to 8 and 20, respectively.
It has 6, 28. A depth of about 200 μm is formed on the lower surface (the surface that contacts the intermediate flat plate member 14) of the upper flat plate member 16.
An outflow water channel groove 30 (second groove) of m is formed. One end of the outflow water channel groove 30 is connected to the through hole 28, and the other end thereof is on the upper flat plate member 1.
6 is widened in the width direction. Here, the groove 3 for the outflow water channel
At least a part of 0 is formed in a portion that overlaps with the inflow channel groove portion 22 formed in the lower flat plate member 12 (hatched portion in FIG. 2). Further, the outflow channel groove 30 has a curved corner portion 30a in order to reduce the flow resistance of the cooling water flowing in the heat sink 10a and reduce the stagnation. Here, the groove 30 for the outflow water channel is the upper flat plate member 1
It is formed by etching the lower surface of 6.
【００３４】中間平板部材１４は、１００μｍ程度の厚
さを有する銅製の平板で、下側平板部材１２の貫通口１
８，２０それぞれに対応する位置に、２つの貫通口３
４，３６を有している。また、下側平板部材１２に形成
された流入水路用溝部２２と上側平板部材１６に形成さ
れた流出水路用溝部３０との重なる部分には、複数の導
水孔３８が形成されている。ここで、導水孔３８は、中
間平板部材１４を両面からエッチングすることによって
形成されている。The intermediate flat plate member 14 is a copper flat plate having a thickness of about 100 μm, and the through hole 1 of the lower flat plate member 12 is formed.
Two through holes 3 at the positions corresponding to 8 and 20 respectively.
It has 4, 36. Further, a plurality of water guiding holes 38 are formed in a portion where the inflow water channel groove portion 22 formed in the lower flat plate member 12 and the outflow water channel groove portion 30 formed in the upper flat plate member 16 overlap. Here, the water guide holes 38 are formed by etching the intermediate flat plate member 14 from both sides.
【００３５】ここで、特に、上側平板部材１６の上面
は、冷却すべき発熱体である半導体レーザ２ａが搭載さ
れる半導体レーザ搭載領域Ｒ２ａを有しており、複数の
導水孔３８は、当該半導体レーザ搭載領域Ｒ２ａに対向
する位置に設けられている。すなわち、半導体レーザ２
ａがほぼ直方体形状を有しているため、半導体レーザ搭
載領域Ｒ２ａは長方形状となり、複数の導水孔３８は、
かかる長方形状の長手方向（図１のｙ軸方向）に対して
一列に配列して形成されている。Here, in particular, the upper surface of the upper flat plate member 16 has a semiconductor laser mounting region R2a in which the semiconductor laser 2a, which is a heating element to be cooled, is mounted, and the plurality of water guiding holes 38 are provided in the semiconductor. It is provided at a position facing the laser mounting region R2a. That is, the semiconductor laser 2
Since a has a substantially rectangular parallelepiped shape, the semiconductor laser mounting region R2a has a rectangular shape, and the plurality of water guiding holes 38 are
The rectangular shapes are arranged in a line in the longitudinal direction (y-axis direction in FIG. 1).
【００３６】下側平板部材１２の上面と中間平板部材１
４の下面、中間平板部材１４の上面と上側平板部材１６
の下面とを接合することにより、図３〜図６に示す如
く、下側平板部材１２に形成された流入水路用溝部２２
と中間平板部材１４の下面とによって、冷却水が供給さ
れる流入水路４０（第１の空間）が画成され、同様に上
側平板部材１６に形成された流出水路用溝部３０と中間
平板部材１４の上面とによって、冷却水を流出させる流
出水路４２（第２の空間）が画成される。The upper surface of the lower flat plate member 12 and the intermediate flat plate member 1
4, the upper surface of the intermediate flat plate member 14 and the upper flat plate member 16
As shown in FIGS. 3 to 6, the inflow channel groove portion 22 formed in the lower flat plate member 12 by being joined to the lower surface of the
And the lower surface of the intermediate flat plate member 14 define an inflow water channel 40 (first space) to which cooling water is supplied, and similarly, the outflow water channel groove portion 30 formed in the upper flat plate member 16 and the intermediate flat plate member 14 are defined. And an upper surface of the cooling water define an outflow water channel 42 (second space) through which the cooling water flows out.
【００３７】下側平板部材１２に形成された貫通口１
８、中間平板部材１４に形成された貫通口３４、上側平
板部材１６に形成された貫通口２６は連結されて、流入
水路４０に冷却水を供給するための流入口４４を形成
し、下側平板部材１２に形成された貫通口２０、中間平
板部材１４に形成された貫通口３６、上側平板部材１６
に形成された貫通口２８は連結されて、流出水路４２か
ら冷却水を流出させる流出口４６を形成する。Through-hole 1 formed in the lower flat plate member 12
8, the through hole 34 formed in the intermediate flat plate member 14 and the through hole 26 formed in the upper flat plate member 16 are connected to each other to form an inflow port 44 for supplying cooling water to the inflow water channel 40, and the lower side Through hole 20 formed in flat plate member 12, through hole 36 formed in intermediate flat plate member 14, upper flat plate member 16
The through holes 28 formed in the above are connected to each other to form an outflow port 46 through which the cooling water flows out from the outflow water channel 42.
【００３８】そして、図３〜図６に示すように、流入水
路４０（第１の空間）、流出水路４２（第２の空間）及
び導水孔３８により冷却水路（流体流路）が構成されて
いる。また、この冷却水路は、上述の流入口４４及び流
出口４６を有している。ここで、上記導水孔３８は、流
入水路４０に供給された冷却水を流出水路４２に噴出さ
せるために後述の流入水路４０の断面積よりも十分小さ
い断面積を有している。As shown in FIGS. 3 to 6, the inflow water channel 40 (first space), the outflow water channel 42 (second space) and the water guiding hole 38 constitute a cooling water channel (fluid channel). There is. Further, the cooling water passage has the inflow port 44 and the outflow port 46 described above. Here, the water guide hole 38 has a cross-sectional area that is sufficiently smaller than the cross-sectional area of the inflow water channel 40 described below in order to eject the cooling water supplied to the inflow water channel 40 to the outflow water channel 42.
【００３９】また、図４〜図６に示すように、このヒー
トシンク１０ａにおいては、流入水路４０、流出水路４
２及び導水孔３８からなる冷却水路に内壁面（流入口４
４及び流出口４６の内壁面も含む）には、該内壁面を被
覆して該内壁面と流体との接触を防止する膜状の接触防
止層３００が形成されている。Further, as shown in FIGS. 4 to 6, in the heat sink 10a, the inflow water channel 40 and the outflow water channel 4 are provided.
2 and an inner wall surface (inflow port 4
4 and the inner wall surface of the outflow port 46) is formed with a film-like contact prevention layer 300 that covers the inner wall surface and prevents contact between the inner wall surface and a fluid.
【００４０】この接触防止層３００は、冷却水に接触す
る第１の層１００と、該第１の層１００と冷却水路の内
壁面との間に配置される第２の層２００とを有してい
る。第１の層１００はＡｕ、Ａｕ合金、Ａｇ又はＡｇ合
金を主成分として構成されており、第２の層２００はＮ
ｉ、Ｍｏ、Ｗ又はＴｉを主成分として構成されている。This contact prevention layer 300 has a first layer 100 that contacts cooling water and a second layer 200 that is arranged between the first layer 100 and the inner wall surface of the cooling water passage. ing. The first layer 100 is mainly composed of Au, Au alloy, Ag or Ag alloy, and the second layer 200 is N
It is composed mainly of i, Mo, W or Ti.
【００４１】第１の層１００の主成分となるＡｕ合金
は、ＡｕとＧｅとの合金、又は、ＡｕとＺｎとの合金で
あることが好ましい。また、第１の層１００の主成分と
なるＡｇ合金は、ＡｇとＧｅとの合金、ＡｇとＮｉとの
合金、又は、ＡｇとＭｎとの合金であることが好まし
い。The Au alloy as the main component of the first layer 100 is preferably an alloy of Au and Ge or an alloy of Au and Zn. Further, the Ag alloy as the main component of the first layer 100 is preferably an alloy of Ag and Ge, an alloy of Ag and Ni, or an alloy of Ag and Mn.
【００４２】上記の接触防止層の第１の層１００は、酸
性の水等の液中においても酸化されにくい金属を主成分
とするので充分に冷却水路の内壁面の腐食を防止するこ
とができる。また、冷却水路の内壁面と第１の層１００
との間に第２の層２００を配置することにより、ヒート
シンク１０ａの製造時や作動時に高温の雰囲気下に置か
れても、第１の層１００を構成する金属元素の原子の冷
却水路の内壁面への熱拡散を充分に防止することができ
る。The first layer 100 of the contact prevention layer is composed mainly of a metal that is difficult to be oxidized even in a liquid such as acidic water, so that the inner wall surface of the cooling water passage can be sufficiently prevented from corroding. . In addition, the inner wall surface of the cooling water channel and the first layer 100
By arranging the second layer 200 between and, even if the heat sink 10a is placed in a high temperature atmosphere during manufacturing or operation, the cooling water channels of the atoms of the metal element forming the first layer 100 It is possible to sufficiently prevent heat diffusion to the wall surface.
【００４３】例えば、第２の層２００をＮｉからなる層
とした場合、電気抵抗率は約６．９×１０-8Ω・ｍ、熱
伝導率は約８８Ｗ／ｍ・Ｋとなり、充分な導電性と熱伝
導を得ることができる。また、厚さを１．０〜７．０μ
ｍとした場合に銅製の冷却水路の内壁面に対する優れた
密着性を得ることができる。なお、この場合に厚さが
７．０μｍを超えると、銅製の冷却水路の内壁面から剥
がれ易くなる傾向が大きくなり、厚さが１．０μｍ未満
となると、第１の層１００の主成分となる金属の原子の
銅製の冷却水路の内壁面への拡散防止効果が十分に得ら
れなくなる傾向が大きくなる。For example, when the second layer 200 is a layer made of Ni, the electrical resistivity is about 6.9 × 10 −8 Ω · m and the thermal conductivity is about 88 W / m · K. And heat conduction can be obtained. In addition, the thickness is 1.0 to 7.0 μ.
When m is set, excellent adhesion to the inner wall surface of the copper cooling water passage can be obtained. In this case, if the thickness exceeds 7.0 μm, it tends to be easily peeled off from the inner wall surface of the cooling water channel made of copper, and if the thickness is less than 1.0 μm, it becomes the main component of the first layer 100. There is a large tendency that the effect of preventing diffusion of atoms of the metal to the inner wall surface of the cooling water channel made of copper cannot be sufficiently obtained.
【００４４】例えば、第２の層２００をＭｏからなる層
とした場合、電気抵抗率は約５．７×１０-8Ω・ｍと、
熱伝導率は約１４２Ｗ／ｍ・Ｋとなり、充分な導電性と
熱伝導を得ることができる。また、厚さを０．５〜２．
０μｍとした場合に銅製の冷却水路の内壁面に対する優
れた密着性を得ることができる。なお、この場合に厚さ
が２．０μｍを超えると、銅製の冷却水路の内壁面から
剥がれ易くなる傾向が大きくなり、厚さが０．５μｍ未
満となると、第１の層１００の主成分となる金属の原子
の銅製の冷却水路の内壁面への拡散防止効果が十分に得
られなくなる傾向が大きくなる。For example, when the second layer 200 is a layer made of Mo, the electric resistivity is about 5.7 × 10 −8 Ω · m,
The thermal conductivity is about 142 W / m · K, and sufficient conductivity and thermal conductivity can be obtained. Further, the thickness is 0.5 to 2.
When the thickness is 0 μm, excellent adhesion to the inner wall surface of the cooling water channel made of copper can be obtained. In this case, if the thickness exceeds 2.0 μm, it tends to be easily peeled off from the inner wall surface of the cooling water channel made of copper, and if the thickness is less than 0.5 μm, it becomes the main component of the first layer 100. There is a large tendency that the effect of preventing diffusion of atoms of the metal to the inner wall surface of the cooling water channel made of copper cannot be sufficiently obtained.
【００４５】例えば、第２の層２００をＷからなる層と
した場合、電気抵抗率は約５．４×１０-8Ω・ｍ、熱伝
導率は約１６７Ｗ／ｍ・Ｋとなり、充分な導電性と熱伝
導を得ることができる。また、厚さを０．５〜２．０μ
ｍとした場合に銅製の冷却水路の内壁面に対する優れた
密着性を得ることができる。なお、この場合に厚さが
２．０μｍを超えると、銅製の冷却水路の内壁面から剥
がれ易くなる傾向が大きくなり、厚さが０．５μｍ未満
となると、第１の層１００の主成分となる金属の原子の
銅製の冷却水路の内壁面への拡散防止効果が十分に得ら
れなくなる傾向が大きくなる。For example, when the second layer 200 is a layer made of W, the electrical resistivity is about 5.4 × 10 −8 Ω · m and the thermal conductivity is about 167 W / m · K. And heat conduction can be obtained. Moreover, the thickness is 0.5 to 2.0 μ.
When m is set, excellent adhesion to the inner wall surface of the copper cooling water passage can be obtained. In this case, if the thickness exceeds 2.0 μm, it tends to be easily peeled off from the inner wall surface of the cooling water channel made of copper, and if the thickness is less than 0.5 μm, it becomes the main component of the first layer 100. There is a large tendency that the effect of preventing diffusion of atoms of the metal to the inner wall surface of the cooling water channel made of copper cannot be sufficiently obtained.
【００４６】例えば、第２の層２００をＴｉからなる層
とした場合、電気抵抗率は約５４×１０-8Ω・ｍ、熱伝
導率は約１６Ｗ／ｍ・Ｋとなり、上記のＮｉ、Ｍｏ、Ｗ
と比較すると導電性で劣るものの第２の層２００として
使用する場合の充分な導電性と熱伝導を得ることができ
る。また、厚さを０．３〜１．５μｍとした場合に銅製
の冷却水路の内壁面に対する優れた密着性を得ることが
できる。なお、この場合に厚さが１．５μｍを超える
と、銅製の冷却水路の内壁面から剥がれ易くなる傾向が
大きくなり、厚さが０．３μｍ未満となると、第１の層
１００の主成分となる金属の原子の銅製の冷却水路の内
壁面への拡散防止効果が十分に得られなくなる傾向が大
きくなる。For example, when the second layer 200 is a layer made of Ti, the electric resistivity is about 54 × 10 −8 Ω · m, the thermal conductivity is about 16 W / m · K, and the above Ni and Mo are obtained. , W
Although it is inferior in conductivity as compared with, it is possible to obtain sufficient conductivity and heat conduction when used as the second layer 200. Further, when the thickness is 0.3 to 1.5 μm, excellent adhesion to the inner wall surface of the copper cooling water passage can be obtained. In this case, if the thickness exceeds 1.5 μm, it tends to be easily peeled off from the inner wall surface of the cooling water channel made of copper, and if the thickness is less than 0.3 μm, it becomes the main component of the first layer 100. There is a large tendency that the effect of preventing diffusion of atoms of the metal to the inner wall surface of the cooling water channel made of copper cannot be sufficiently obtained.
【００４７】例えば、第１の層１００をＡｕからなる層
とした場合、電気抵抗率は約２．３×１０-8Ω・ｍ、熱
伝導率は約２９３Ｗ／ｍ・Ｋとなり、充分な導電性と熱
伝導を得ることができる。また、この場合の厚さは銅の
腐食反応を十分に防止できる厚さであれば、特に限定さ
れず、成膜の容易性も考慮して適宜設定される。For example, when the first layer 100 is a layer made of Au, the electric resistivity is about 2.3 × 10 −8 Ω · m, and the thermal conductivity is about 293 W / m · K. And heat conduction can be obtained. Further, the thickness in this case is not particularly limited as long as it is a thickness that can sufficiently prevent the corrosion reaction of copper, and is appropriately set in consideration of easiness of film formation.
【００４８】例えば、第１の層１００をＡｕとＧｅとの
合金からなる層とした場合、電気抵抗率は約２．３×１
０-8Ω・ｍ、熱伝導率は約２９３Ｗ／ｍ・Ｋとなり、充
分な導電性と熱伝導を得ることができる。また、この場
合の厚さも銅の腐食反応を十分に防止できる厚さであれ
ば、特に限定されず、成膜の容易性も考慮して適宜設定
される。For example, when the first layer 100 is a layer made of an alloy of Au and Ge, the electrical resistivity is about 2.3 × 1.
The thermal conductivity is 0 -8 Ω · m, and the thermal conductivity is about 293 W / m · K, and sufficient conductivity and thermal conductivity can be obtained. Further, the thickness in this case is not particularly limited as long as it is a thickness that can sufficiently prevent the corrosion reaction of copper, and is appropriately set in consideration of easiness of film formation.
【００４９】例えば、第１の層１００をＡｕとＺｎとの
合金からなる層とした場合、電気抵抗率は約２．３×１
０-8Ω・ｍ、熱伝導率は約２９３Ｗ／ｍ・Ｋとなり、充
分な導電性と熱伝導を得ることができる。また、この場
合の厚さも銅の腐食反応を十分に防止できる厚さであれ
ば、特に限定されず、成膜の容易性も考慮して適宜設定
される。For example, when the first layer 100 is a layer made of an alloy of Au and Zn, the electric resistivity is about 2.3 × 1.
The thermal conductivity is 0 -8 Ω · m, and the thermal conductivity is about 293 W / m · K, and sufficient conductivity and thermal conductivity can be obtained. Further, the thickness in this case is not particularly limited as long as it is a thickness that can sufficiently prevent the corrosion reaction of copper, and is appropriately set in consideration of easiness of film formation.
【００５０】例えば、第１の層１００をＡｇからなる層
とした場合、電気抵抗率は約１．６×１０-8Ω・ｍ、熱
伝導率は約４１９Ｗ／ｍ・Ｋとなり、充分な導電性と熱
伝導を得ることができる。また、この場合の厚さも銅の
腐食反応を十分に防止できる厚さであれば、特に限定さ
れず、成膜の容易性も考慮して適宜設定される。For example, when the first layer 100 is a layer made of Ag, the electric resistivity is about 1.6 × 10 −8 Ω · m and the thermal conductivity is about 419 W / m · K. And heat conduction can be obtained. Further, the thickness in this case is not particularly limited as long as it is a thickness that can sufficiently prevent the corrosion reaction of copper, and is appropriately set in consideration of easiness of film formation.
【００５１】例えば、第１の層１００をＡｇとＧｅとの
合金からなる層とした場合、電気抵抗率は約１．６×１
０-8Ω・ｍ、熱伝導率は約４１９Ｗ／ｍ・Ｋとなり、充
分な導電性と熱伝導を得ることができる。また、この場
合の厚さも銅の腐食反応を十分に防止できる厚さであれ
ば、特に限定されず、成膜の容易性も考慮して適宜設定
される。For example, when the first layer 100 is a layer made of an alloy of Ag and Ge, the electric resistivity is about 1.6 × 1.
The thermal conductivity is 0 -8 Ω · m, and the thermal conductivity is about 419 W / m · K, and sufficient conductivity and thermal conductivity can be obtained. Further, the thickness in this case is not particularly limited as long as it is a thickness that can sufficiently prevent the corrosion reaction of copper, and is appropriately set in consideration of easiness of film formation.
【００５２】例えば、第１の層１００をＡｇとＮｉとの
合金からなる層とした場合、電気抵抗率は約１．６×１
０-8Ω・ｍ、熱伝導率は約４１９Ｗ／ｍ・Ｋとなり、充
分な導電性と熱伝導を得ることができる。また、この場
合の厚さも銅の腐食反応を十分に防止できる厚さであれ
ば、特に限定されず、成膜の容易性も考慮して適宜設定
される。For example, when the first layer 100 is a layer made of an alloy of Ag and Ni, the electric resistivity is about 1.6 × 1.
The thermal conductivity is 0 -8 Ω · m, and the thermal conductivity is about 419 W / m · K, and sufficient conductivity and thermal conductivity can be obtained. Further, the thickness in this case is not particularly limited as long as it is a thickness that can sufficiently prevent the corrosion reaction of copper, and is appropriately set in consideration of easiness of film formation.
【００５３】例えば、第１の層１００をＡｇとＭｎとの
合金からなる層とした場合、電気抵抗率は約１．６×１
０-8Ω・ｍ、熱伝導率は約４１９Ｗ／ｍ・Ｋとなり、充
分な導電性と熱伝導を得ることができる。また、この場
合の厚さも銅の腐食反応を十分に防止できる厚さであれ
ば、特に限定されず、成膜の容易性も考慮して適宜設定
される。For example, when the first layer 100 is a layer made of an alloy of Ag and Mn, the electric resistivity is about 1.6 × 1.
The thermal conductivity is 0 -8 Ω · m, and the thermal conductivity is about 419 W / m · K, and sufficient conductivity and thermal conductivity can be obtained. Further, the thickness in this case is not particularly limited as long as it is a thickness that can sufficiently prevent the corrosion reaction of copper, and is appropriately set in consideration of easiness of film formation.
【００５４】以上説明した第１の層１００と第２の層２
００との組み合わせとしては、酸性の冷却水が供給され
た場合の耐腐食性、電気抵抗率、熱伝導率、銅製の冷却
水路との密着性、及び、成膜の容易さの観点から、第１
の層１００がＡｕ又はＡｕ合金を主成分として構成され
ており、第２の層２００がＮｉを主成分として構成され
てることが好ましい。また、この組み合わせの場合、Ａ
ｕ合金は、ＡｕとＧｅとの合金、又は、ＡｕとＺｎとの
合金であることが好ましい。The first layer 100 and the second layer 2 described above
As a combination with 00, from the viewpoint of corrosion resistance when an acidic cooling water is supplied, electrical resistivity, thermal conductivity, adhesion with a cooling channel made of copper, and ease of film formation, 1
It is preferable that the layer 100 is made of Au or an Au alloy as a main component, and the second layer 200 is made of Ni as a main component. In the case of this combination, A
The u alloy is preferably an alloy of Au and Ge or an alloy of Au and Zn.
【００５５】第１の層１００及び第２の層２００を冷却
水路の内壁面に形成する方法は、特に限定されず、電界
メッキ法等のメッキ法や、スパッタ法、蒸着法（抵抗加
熱法、電子ビーム法）等の公知の薄膜製造技術により形
成することができる。例えば、上側平板部材１６の下面
（中間平板部材１４の上面と対向する面）、中間平板部
材１４の両面（上側平板部材１６の下面及び下側平板部
材１２の上面にそれぞれ対向する面）、及び、下側平板
部材１２の上面のそれぞれに上記の方法により第２の層
２００を形成し、次いで第１の層１００を予め形成して
おき、下側平板部材１２の上面と中間平板部材１４の下
面、中間平板部材１４の上面と上側平板部材１６の下面
とを組み合せて拡散接合することにより製造することが
できる。The method of forming the first layer 100 and the second layer 200 on the inner wall surface of the cooling water channel is not particularly limited, and plating methods such as electric field plating, sputtering, vapor deposition (resistance heating, It can be formed by a known thin film manufacturing technique such as an electron beam method. For example, a lower surface of the upper flat plate member 16 (a surface facing the upper surface of the intermediate flat plate member 14), both surfaces of the intermediate flat plate member 14 (a surface facing the lower surface of the upper flat plate member 16 and the upper surface of the lower flat plate member 12), and The second layer 200 is formed on each of the upper surfaces of the lower flat plate members 12 by the method described above, and then the first layer 100 is formed in advance, and the upper surface of the lower flat plate member 12 and the intermediate flat plate member 14 are formed. It can be manufactured by combining the lower surface, the upper surface of the intermediate flat plate member 14 and the lower surface of the upper flat plate member 16 and performing diffusion bonding.
【００５６】半導体レーザスタック装置１は、下側平板
部材１２、中間平板部材１４及び上側平板部材１６とい
う３つの平板部材によってヒートシンク１０ａ〜１０ｃ
を構成している。従って、ヒートシンク１０ａ〜１０ｃ
を極めて薄く構成することができ、その結果、半導体レ
ーザスタック装置１を極めて小型に構成することができ
る。The semiconductor laser stack device 1 includes heat sinks 10a to 10c by three flat plate members including a lower flat plate member 12, an intermediate flat plate member 14 and an upper flat plate member 16.
Are configured. Therefore, the heat sinks 10a to 10c
Can be made extremely thin, and as a result, the semiconductor laser stack device 1 can be made extremely small.
【００５７】また、ヒートシンク１０ａ〜１０ｃは、流
入水路用溝部２２、流出水路用溝部３０といった溝部の
形成、及び、導水孔３８といった孔の形成など、比較的
簡単な公知の技術によって製造が可能となり、製造が比
較的容易である。その結果、半導体レーザスタック装置
１の製造が比較的容易となる。Further, the heat sinks 10a to 10c can be manufactured by a relatively simple known technique such as formation of groove portions such as the inflow water channel groove portion 22 and the outflow water channel groove portion 30 and the formation of the water guide hole 38. , Relatively easy to manufacture. As a result, the manufacture of the semiconductor laser stack device 1 becomes relatively easy.
【００５８】また、本実施形態にかかる半導体レーザス
タック装置１は、ヒートシンク１０ａ〜１０ｃにおい
て、導水孔３８の形成位置を半導体レーザ搭載領域Ｒ２
ａに対向する中間平板部材１４の位置に設けていること
で、冷却すべき半導体レーザ２ａ〜２ｃを効果的に冷却
することが可能となる。その結果、半導体レーザ２ａ〜
２ｃから安定したレーザ光を出力することが可能とな
る。Further, in the semiconductor laser stack device 1 according to this embodiment, in the heat sinks 10a to 10c, the position where the water guiding hole 38 is formed is set to the semiconductor laser mounting region R2.
By providing the intermediate flat plate member 14 at a position facing a, it is possible to effectively cool the semiconductor lasers 2a to 2c to be cooled. As a result, the semiconductor lasers 2a ...
It is possible to output stable laser light from 2c.
【００５９】また、本実施形態にかかる半導体レーザス
タック装置１は、ヒートシンク１０ａ〜１０ｃにおい
て、複数の導水孔３８を有している。その結果、半導体
レーザ２ａ〜２ｃを均一かつ広範囲に冷却することがで
きる。その結果、空間的に均一なレーザ光を出力するこ
とが可能となる。Further, the semiconductor laser stack device 1 according to the present embodiment has a plurality of water guiding holes 38 in the heat sinks 10a to 10c. As a result, the semiconductor lasers 2a to 2c can be cooled uniformly and in a wide range. As a result, spatially uniform laser light can be output.
【００６０】さらに、本実施形態にかかる半導体レーザ
スタック装置１は、ヒートシンク１０ａ〜１０ｃの導水
孔３８が、流入水路４０に供給された冷却水を流出水路
４２に噴出させるために十分小さい断面積を有してい
る。従って、流出水路４２の内壁における境界層を破る
ことができ、半導体レーザ２ａ〜２ｃの冷却効率が増
す、その結果、半導体レーザ２ａ〜２ｃそれぞれからさ
らに安定したレーザ光を出力することが可能となる。Further, in the semiconductor laser stack device 1 according to the present embodiment, the water guiding holes 38 of the heat sinks 10a to 10c have a sufficiently small cross-sectional area for ejecting the cooling water supplied to the inflow water channel 40 to the outflow water channel 42. Have Therefore, the boundary layer on the inner wall of the outflow water channel 42 can be broken, and the cooling efficiency of the semiconductor lasers 2a to 2c is increased. As a result, more stable laser light can be output from each of the semiconductor lasers 2a to 2c. .
【００６１】さらに、本実施形態にかかる半導体レーザ
スタック装置１は、ヒートシンク１０ａ〜１０ｃそれぞ
れの流入口４４に接続された一つの供給管５、及び、ヒ
ートシンク１０ａ〜１０ｃそれぞれの流出口４６に接続
された一つの排出管６とを備えることで、供給管５と流
入口４４とを接続する他の接続管、あるいは、排出管６
と流出口４６とを接続する他の接続管等が不要となり、
より一層の小型化が図れる。Further, the semiconductor laser stack device 1 according to this embodiment is connected to one supply pipe 5 connected to the inlets 44 of the heat sinks 10a to 10c and the outlet 46 of each of the heat sinks 10a to 10c. By providing only one discharge pipe 6, another connection pipe that connects the supply pipe 5 and the inflow port 44, or the discharge pipe 6
And other connecting pipes connecting the outlet 46 and the outlet 46 are unnecessary,
Further miniaturization can be achieved.
【００６２】以上、本発明の好適な実施形態について詳
細を説明したが、本発明は上記実施形態に限定されるも
のではない。Although the preferred embodiments of the present invention have been described in detail above, the present invention is not limited to the above embodiments.
【００６３】例えば、上側平板部材１６の下面、中間平
板部材１４の両面、及び、下側平板部材１２の上面のそ
れぞれに第２の層２００を形成し、次いで第１の層１０
０を形成した後、上側平板部材１６の下面、中間平板部
材１４の両面、及び、下側平板部材１２の上面のそれぞ
れの外縁部分にエッチングなどの表面処理を施して、該
外縁部分の第１の層１００及び第２の層２００を除去し
て銅の表面を露出させ、この銅の露出面の部分を接合面
として上側平板部材１６、中間平板部材１４、及び、下
側平板部材１２を接合し、図７に示す冷却水路を有する
ヒートシンク１０Ａを構成してもよい。For example, the second layer 200 is formed on each of the lower surface of the upper flat plate member 16, both surfaces of the intermediate flat plate member 14, and the upper surface of the lower flat plate member 12, and then the first layer 10 is formed.
After forming 0, the outer surface of each of the lower surface of the upper flat plate member 16, the both surfaces of the intermediate flat plate member 14, and the upper surface of the lower flat plate member 12 is subjected to a surface treatment such as etching to form the first outer edge part. Layer 100 and the second layer 200 are exposed to expose the surface of copper, and the upper flat plate member 16, the intermediate flat plate member 14, and the lower flat plate member 12 are joined using the exposed copper portion as a joining surface. However, the heat sink 10A having the cooling water passage shown in FIG. 7 may be configured.
【００６４】[0064]
【実施例】以下、実施例及び比較例に基づいて本発明を
より具体的に説明するが、本発明は以下の実施例に限定
されるものではない。EXAMPLES The present invention will be described in more detail based on the following examples and comparative examples, but the present invention is not limited to the following examples.
【００６５】（実施例１）図２〜図６に示したヒートシ
ンク１０ａと同様の構成を有するヒートシンクを作製し
た。銅製の上側平板部材（１２ｍｍ×２０ｍｍ、厚さ：
５００μｍ）の下面、銅製の中間平板部材（１２ｍｍ×
２０ｍｍ、厚さ：２００μｍ）の両面、及び、銅製の下
側平板部材（１２ｍｍ×２０ｍｍ、厚さ：５００μｍ）
の上面のそれぞれに形成した接触防止層の第１の層はＡ
ｕからなる層（厚さ：２μｍ）とし、第２の層はＮｉ層
（厚さ：３μｍ）とした。Example 1 A heat sink having the same structure as the heat sink 10a shown in FIGS. 2 to 6 was produced. Upper plate member made of copper (12 mm x 20 mm, thickness:
500 μm) lower surface, copper intermediate flat plate member (12 mm ×
20 mm, thickness: 200 μm) on both sides, and a copper lower flat plate member (12 mm × 20 mm, thickness: 500 μm)
The first layer of the contact prevention layer formed on each of the upper surfaces of the
A layer made of u (thickness: 2 μm) was used, and a second layer was a Ni layer (thickness: 3 μm).
【００６６】なお、第１の層及び第２の層はともに電解
めっき法により作製した。また、第１の層及び第２の層
をそれぞれ形成した上側平板部材、中間平板部材及び下
側平板部材の接合は、これら平板部材を組み合わせ、約
７００℃程度の温度条件のもとで、上側平板部材の上面
の側と下側平板部材の下面の側から加圧（約１ＭＰａ）
し、拡散接合することにより行った。Both the first layer and the second layer were formed by electrolytic plating. Further, the upper flat plate member, the intermediate flat plate member and the lower flat plate member on which the first layer and the second layer are respectively formed are joined by combining these flat plate members under a temperature condition of about 700 ° C. Pressurization (approx. 1 MPa) from the upper surface side of the flat plate member and the lower surface side of the lower flat plate member
Then, diffusion bonding was performed.
【００６７】このヒートシンク上に半導体レーザアレイ
を載置し、ヒートシンクの冷却水路にイオン交換水を還
流させながら５０００時間作動させた後、ヒートシンク
を取り外して分解し、冷却水路の表面を研削することに
より第一の層表面と、冷却水路の内壁面（銅のバルク表
面）の状態を観察した。なお、この表面の状態の観察に
は、目視の他に、エネルギー分散型Ｘ線分析装置（ＥＤ
Ｘ）（商品名：EMAX ENERGY EX-200、ＨＯＲＩＢＡ社
製）を用い、分析位置の組成分析とＳＥＭ写真を撮影す
ることにより行った。目視でもＥＤＸによる分析でも、
第一の層表面の腐食は認められず、また、第１の層のＡ
ｕ原子の冷却水路の内壁面（銅のバルク表面）から内部
への熱拡散も認められなかった。By placing the semiconductor laser array on this heat sink and operating it for 5000 hours while circulating ion-exchanged water in the cooling water passage of the heat sink, the heat sink is removed and disassembled, and the surface of the cooling water passage is ground. The state of the first layer surface and the inner wall surface of the cooling water channel (copper bulk surface) was observed. In addition to the visual observation, an energy dispersive X-ray analyzer (ED
X) (trade name: EMAX ENERGY EX-200, manufactured by HORIBA) was used to analyze the composition at the analysis position and take an SEM photograph. Whether visually or by EDX analysis,
No corrosion of the surface of the first layer was observed, and A of the first layer was
No heat diffusion from the inner wall surface (bulk surface of copper) of the cooling channel of u atoms to the inside was observed.
【００６８】（実施例２）上側平板部材の下面、中間平
板部材の両面及び下側平板部材の上面のそれぞれに形成
した接触防止層の第１の層をＡｇからなる層とした以外
は、実施例１と同様の構成を有するヒートシンクを作製
した。(Example 2) Implementation was carried out except that the first layer of the contact prevention layer formed on each of the lower surface of the upper flat plate member, both surfaces of the intermediate flat plate member and the upper surface of the lower flat plate member was made of Ag. A heat sink having the same structure as in Example 1 was manufactured.
【００６９】そして、実施例１と同様に、このヒートシ
ンク上に半導体レーザアレイを載置し、ヒートシンクの
冷却水路にイオン交換水を還流させながら５０００時間
作動させた後、ヒートシンクを取り外して分解し、冷却
水路の表面を研削することにより第一の層表面と、冷却
水路の内壁面（銅のバルク表面）の状態を観察した。な
お、この場合、ヒートシンクの冷却水路に供給するイオ
ン交換水は、硫化物イオンを充分に除去した。目視でも
ＥＤＸによる分析でも、第一の層表面の腐食は認められ
ず、また、第１の層のＡｇ原子の冷却水路の内壁面（銅
のバルク表面）から内部への熱拡散も認められなかっ
た。Then, in the same manner as in Example 1, the semiconductor laser array was placed on this heat sink, and after operating for 5000 hours while circulating ion-exchanged water in the cooling water passage of the heat sink, the heat sink was removed and disassembled. By grinding the surface of the cooling water channel, the state of the first layer surface and the inner wall surface (copper bulk surface) of the cooling water channel were observed. In this case, sulfide ions were sufficiently removed from the ion-exchanged water supplied to the cooling water passage of the heat sink. Corrosion of the surface of the first layer was not recognized by visual inspection or analysis by EDX, and thermal diffusion of the Ag atoms of the first layer from the inner wall surface (bulk surface of copper) of the cooling channel to the inside was not recognized. It was
【００７０】（比較例１）次に、接触防止層として、Ａ
ｕからなる層（厚さ：２μｍ）のみの層を形成した以外
は、実施例１と同様の構成を有するヒートシンクを作製
した。そして、実施例１と同様に、このヒートシンク上
に半導体レーザアレイを載置し、ヒートシンクの冷却水
路にイオン交換水を還流させながら５０００時間作動さ
せた後、ヒートシンクを取り外して分解し、冷却水路の
表面を研削することにより第一の層表面と、冷却水路の
内壁面（銅のバルク表面）の状態を観察した。目視でも
ＥＤＸによる分析でも、第一の層のＡｕ原子が冷却水路
内部へ熱拡散し消滅していることが確認され、その結果
露出した冷却水路の表面も腐食が進行していた。(Comparative Example 1) Next, A was used as a contact prevention layer.
A heat sink having the same configuration as in Example 1 was prepared except that only a layer made of u (thickness: 2 μm) was formed. Then, in the same manner as in Example 1, the semiconductor laser array was placed on this heat sink, and after operating for 5000 hours while circulating ion-exchanged water in the cooling water channel of the heat sink, the heat sink was removed and disassembled to remove the cooling water channel. By grinding the surface, the state of the first layer surface and the inner wall surface of the cooling water channel (copper bulk surface) was observed. Both visually and by EDX analysis, it was confirmed that the Au atoms in the first layer were thermally diffused into the cooling channel and disappeared, and as a result, the exposed surface of the cooling channel was also corroded.
【００７１】[0071]
【発明の効果】以上説明したように、本発明のヒートシ
ンクによれば、長期にわたり使用しても冷却すべき発熱
体を安定的に冷却することができる。そして、この長寿
命のヒートシンクを備えた半導体レーザ装置及び半導体
レーザスタック装置は、半導体レーザアレイの冷却効率
の変動を十分に防止できるので、長期にわたり安定した
出力を得ることができる。As described above, according to the heat sink of the present invention, it is possible to stably cool the heating element to be cooled even if it is used for a long period of time. Since the semiconductor laser device and the semiconductor laser stack device provided with this long-life heat sink can sufficiently prevent the fluctuation of the cooling efficiency of the semiconductor laser array, a stable output can be obtained for a long time.
【図１】本発明の半導体レーザスタック装置の好適な一
実施形態の基本構成を示す斜視図である。FIG. 1 is a perspective view showing a basic configuration of a preferred embodiment of a semiconductor laser stack device of the present invention.
【図２】図１に示す半導体レーザスタック装置に搭載さ
れるヒートシンクの基本構成を示す分解斜視図である。FIG. 2 is an exploded perspective view showing a basic configuration of a heat sink mounted on the semiconductor laser stack device shown in FIG.
【図３】図２に示すヒートシンクを上方（図１のＺ軸方
向）から見た場合の正面透視図である。3 is a front perspective view of the heat sink shown in FIG. 2 as viewed from above (Z-axis direction in FIG. 1).
【図４】図２のIV−IV線に沿ってみた場合のヒートシン
クの内部の基本構成を示す断面図である。FIG. 4 is a cross-sectional view showing the basic structure of the inside of the heat sink when viewed along the line IV-IV in FIG.
【図５】図２のV−V線に沿ってみた場合のヒートシンク
の内部の基本構成を示す断面図である。5 is a cross-sectional view showing the basic structure of the inside of the heat sink when viewed along the line VV in FIG.
【図６】図２のVI−VI線に沿ってみた場合のヒートシン
クの内部の基本構成を示す断面図である。FIG. 6 is a cross-sectional view showing the basic structure of the inside of the heat sink when viewed along line VI-VI in FIG.
【図７】本発明のヒートシンクの他の実施形態をの基本
構成を示す断面図である。FIG. 7 is a cross-sectional view showing the basic structure of another embodiment of the heat sink of the present invention.
１・・・半導体レーザスタック装置、２ａ，２ｂ，２ｃ・・・
半導体レーザ、３ａ，３ｂ・・・銅板、４ａ，４ｂ・・・リー
ド板、５・・・供給管、６・・・排出管、７ａ，７ｂ，７ｃ，
７ｄ・・・絶縁部材、１０ａ，１０ｂ，１０ｃ，１０Ａ・・
ヒートシンク、１２・・・下側平板部材（第１の平板状部
材）、１４・・・中間平板部材（仕切り板）、１６・・・上側
平板部材（第２の平板状部材）、１８，２０・・・貫通
口、２２・・・流入水路用溝部、２２ａ・・・隅部、２６，２
８・・・貫通口、３０・・・流出水路用溝部、３０ａ・・・隅
部、３４，３６・・・貫通口、３８・・・導水孔（孔）、４０
・・・流入水路、４２・・・流出水路、４４・・・流入口、４６・
・・流出口、１００・・・第１の層、２００・・・第２の層、３
００・・・接触防止層、Ｒ２ａ・・・半導体レーザ搭載領域。1 ... Semiconductor laser stack device, 2a, 2b, 2c ...
Semiconductor lasers 3a, 3b ... Copper plates, 4a, 4b ... Lead plates, 5 ... Supply pipes, 6 ... Discharge pipes, 7a, 7b, 7c,
7d ... Insulating member, 10a, 10b, 10c, 10A ...
Heat sink, 12 ... Lower flat plate member (first flat plate member), 14 ... Intermediate flat plate member (partition plate), 16 ... Upper flat plate member (second flat plate member), 18, 20 ... through-holes, 22 ... inflow channel grooves, 22a ... corners, 26, 2
8 ... through port, 30 ... outflow channel groove part, 30a ... corner part, 34, 36 ... through port, 38 ... water guide hole (hole), 40
... Inflow channel, 42 ... Outflow channel, 44 ... Inflow port, 46 ...
..Outlet, 100 ... first layer, 200 ... second layer, 3
00 ... Contact prevention layer, R2a ... Semiconductor laser mounting region.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 名倉 稔 静岡県浜松市泉１−10−19 アスター株式 会社内 (72)発明者 上野 信幸 静岡県浜松市泉１−10−19 アスター株式 会社内 Ｆターム(参考） 5F036 AA01 BA10 BB01 BB41 BD01 5F073 FA14 FA26 FA28 FA30 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Minoru Nagura 1-10-19 Izumi, Hamamatsu City, Shizuoka Prefecture Aster stock In the company (72) Inventor Nobuyuki Ueno 1-10-19 Izumi, Hamamatsu City, Shizuoka Prefecture Aster stock In the company F-term (reference) 5F036 AA01 BA10 BB01 BB41 BD01 5F073 FA14 FA26 FA28 FA30
Claims (9)
ており、前記部材の外部から水を含む流体を流入させる
流入口と、該流体を前記部材の外部に流出させる流出口
とを有する少なくとも１本の流体流路を有しており、 前記部材の外壁面の所定領域に熱的接触を保つ状態で配
置される冷却すべき発熱体と前記少なくとも１本の流体
流路内を流通する前記流体との間で熱交換をさせること
により前記発熱体を冷却するヒートシンクであって、 前記流体が流通する前記流体流路の内壁面には、該内壁
面を被覆して該内壁面と前記流体との接触を防止する膜
状の接触防止層が形成されており、 前記接触防止層は、前記流体に接触する第１の層と、該
第１の層と前記内壁面との間に配置される第２の層とを
有しており、 前記第１の層がＡｕ、Ａｕ合金、Ａｇ又はＡｇ合金を主
成分として構成されており、 前記第２の層がＮｉ、Ｍｏ、Ｗ又はＴｉを主成分として
構成されていること、を特徴とするヒートシンク。1. A copper-made member having a substantially rectangular parallelepiped shape, which has an inlet for introducing a fluid containing water from the outside of the member and an outlet for allowing the fluid to flow out of the member. It has at least one fluid flow path, and circulates in the at least one fluid flow path with a heating element to be cooled which is arranged in a predetermined region of the outer wall surface of the member in a state of maintaining thermal contact. A heat sink that cools the heating element by exchanging heat with the fluid, wherein the inner wall surface of the fluid channel through which the fluid flows covers the inner wall surface and the inner wall surface. A film-shaped contact prevention layer for preventing contact with a fluid is formed, and the contact prevention layer is disposed between the first layer in contact with the fluid and between the first layer and the inner wall surface. And a second layer formed of Au, Au, Gold, Ag or Ag alloy is configured as a main component, a heat sink wherein the second layer and wherein Ni, Mo, be configured to W or Ti as a main component, a.
又は、ＡｕとＺｎとの合金であり、 前記Ａｇ合金が、ＡｇとＧｅとの合金、ＡｇとＮｉとの
合金、又は、ＡｇとＭｎとの合金であること、を特徴と
する請求項１に記載のヒートシンク。2. The Au alloy is an alloy of Au and Ge,
Alternatively, it is an alloy of Au and Zn, and the Ag alloy is an alloy of Ag and Ge, an alloy of Ag and Ni, or an alloy of Ag and Mn. Heatsink as described.
分として構成されており、 前記第２の層がＮｉを主成分として構成されており、 前記Ａｕ合金が、ＡｕとＧｅとの合金、又は、ＡｕとＺ
ｎとの合金であること、を特徴とする請求項１に記載の
ヒートシンク。3. The first layer is composed of Au or an Au alloy as a main component, the second layer is composed of Ni as a main component, and the Au alloy is composed of Au and Ge. Alloy, or Au and Z
It is an alloy with n, The heat sink of Claim 1 characterized by the above-mentioned.
材の前記下面との間に配置される仕切り板と、から構成
されており、 前記仕切り板には、該仕切り板の下面及び前記第１の溝
部により画成される第１の空間と、該仕切り板の上面及
び前記第２の溝部により画成される第２の空間とを連通
する少なくとも１つの孔が形成され、前記第１の空間、
前記第２の空間及び前記孔により前記流体流路が構成さ
れており、 前記流体流路の前記流入口は、前記第１の空間を画成す
る第１の平板状部材又は前記仕切り板に設けられてお
り、 前記流体流路の前記流出口は、前記第２の空間を画成す
る第２の平板状部材又は前記仕切り板に設けられている
こと、を特徴とする請求項１〜３の何れかに記載のヒー
トシンク。4. The copper member comprises: a first flat plate-shaped member having a first groove portion formed on an upper surface thereof; a second flat plate-shaped member having a second groove portion formed at a lower surface thereof; A partition plate disposed between the upper surface of the flat plate member and the lower surface of the second flat plate member, and the partition plate includes a lower surface of the partition plate and the first plate. At least one hole that communicates the first space defined by the groove portion with the upper surface of the partition plate and the second space defined by the second groove portion is formed, and the first space,
The fluid flow path is configured by the second space and the hole, and the inflow port of the fluid flow path is provided in the first flat plate-shaped member or the partition plate that defines the first space. The outlet of the fluid flow path is provided in a second flat plate-shaped member that defines the second space or in the partition plate. The heat sink according to any of the above.
された半導体レーザとを備えることを特徴とする半導体
レーザ装置。5. A semiconductor laser device comprising: the heat sink according to claim 4; and a semiconductor laser mounted on an upper surface of the second flat plate-shaped member of the heat sink.
点を有しており、 前記複数のレーザ出射点は、前記第２の平板状部材の上
面に略垂直な同一平面上であり、かつ、該平面と前記第
２の平板状部材の上面との交線に略平行な直線上にそれ
ぞれ配列されていること、を特徴とする請求項５に記載
の半導体レーザ装置。6. The semiconductor laser has a plurality of laser emission points, and the plurality of laser emission points are on the same plane substantially perpendicular to the upper surface of the second flat plate-shaped member, and The semiconductor laser device according to claim 5, wherein the semiconductor laser devices are arranged on straight lines substantially parallel to a line of intersection between the flat surface and an upper surface of the second flat plate-shaped member.
ンクと、第１の半導体レーザと、第２の半導体レーザと
を備え、 前記第１のヒートシンク及び第２のヒートシンクは、そ
れぞれ請求項４に記載のヒートシンクであり、 前記第１の半導体レーザは、前記第１のヒートシンクの
前記第２の平板状部材の上面と、前記第２のヒートシン
クの前記第１の平板状部材の下面との間に配置されてお
り、 前記第２の半導体レーザは、前記第２のヒートシンクの
前記第２の平板状部材の上面に載置されていること、を
特徴とする半導体レーザスタック装置。7. A first heat sink, a second heat sink, a first semiconductor laser, and a second semiconductor laser are provided, and the first heat sink and the second heat sink are respectively defined in claim 4. The heat sink according to claim 1, wherein the first semiconductor laser is provided between an upper surface of the second flat plate-shaped member of the first heat sink and a lower surface of the first flat plate-shaped member of the second heat sink. The semiconductor laser stack device is arranged, and the second semiconductor laser is mounted on an upper surface of the second flat plate-shaped member of the second heat sink.
体レーザのそれぞれは、複数のレーザ出射点を有してお
り、 前記複数のレーザ出射点は、前記第１のヒートシンクの
前記第２の平板状部材の上面に略垂直な同一平面上であ
り、かつ、該平面と前記第１のヒートシンクの前記第２
の平板状部材の上面との交線に略平行な直線上にそれぞ
れ配列されていること、を特徴とする請求項７に記載の
半導体レーザスタック装置。8. The first semiconductor laser and the second semiconductor laser each have a plurality of laser emission points, and the plurality of laser emission points are the second laser emission points of the first heat sink. It is on the same plane substantially perpendicular to the upper surface of the flat plate-shaped member, and the plane and the second surface of the first heat sink.
8. The semiconductor laser stack device according to claim 7, wherein the semiconductor laser stack devices are arranged on straight lines substantially parallel to the intersecting line with the upper surface of the flat plate-shaped member.
前記第２のヒートシンクの前記流入口との双方に接続さ
れた供給管と、 前記第１のヒートシンクの前記流出口と前記第２のヒー
トシンクの前記流出口との双方に接続された排出管と、
を更に備えたこと、を特徴とする請求項７又は８に記載
の半導体レーザスタック装置。9. A supply pipe connected to both the inlet of the first heat sink and the inlet of the second heat sink, the outlet of the first heat sink and the second heat sink. A discharge pipe connected to both the outlet of the
9. The semiconductor laser stack device according to claim 7, further comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002072731A JP2003273441A (en) | 2002-03-15 | 2002-03-15 | Heat sink, and semiconductor laser device and semiconductor laser stack device using it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002072731A JP2003273441A (en) | 2002-03-15 | 2002-03-15 | Heat sink, and semiconductor laser device and semiconductor laser stack device using it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003273441A true JP2003273441A (en) | 2003-09-26 |
Family
ID=29202644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002072731A Pending JP2003273441A (en) | 2002-03-15 | 2002-03-15 | Heat sink, and semiconductor laser device and semiconductor laser stack device using it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003273441A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005060057A1 (en) * | 2003-12-16 | 2005-06-30 | Hamamatsu Photonics K.K. | Semiconductor laser device and method of producing the same |
| WO2006006455A1 (en) * | 2004-07-08 | 2006-01-19 | Hamamatsu Photonics K.K. | Semiconductor laser device |
| JP2006294943A (en) * | 2005-04-12 | 2006-10-26 | Sony Corp | Semiconductor laser apparatus and heat sink |
| WO2006137219A1 (en) * | 2005-06-20 | 2006-12-28 | Hamamatsu Photonics K.K. | Heat sink, laser apparatus provided with such heat sink, and laser stack apparatus |
| JP2007184349A (en) * | 2006-01-05 | 2007-07-19 | T Rad Co Ltd | Water-cooled heat sink |
| GB2442484A (en) * | 2006-10-05 | 2008-04-09 | Siemens Magnet Technology Ltd | Heat sink comprising a corrosion resistant surface coating |
| US7371615B2 (en) | 2003-09-18 | 2008-05-13 | Fuji Electric Systems, Co., Ltd. | Heat sink and method for its production |
| WO2009052814A2 (en) * | 2007-10-26 | 2009-04-30 | Dirk Lorenzen | Cooling device for semiconductor elements, semiconductor cooling arrangement and method for producing the same |
| WO2009052815A2 (en) * | 2007-10-26 | 2009-04-30 | Dirk Lorenzen | Microchannel heat sink for cooling semiconductor elements and method for treating the surfaces thereof |
| WO2009052817A2 (en) * | 2007-10-26 | 2009-04-30 | Dirk Lorenzen | Corrosion-resistant microchannel heat sink and semiconductor cooling device comprising said microchannel heat sink |
| US20120291995A1 (en) * | 2007-05-31 | 2012-11-22 | Sony Corporation | Heat sink and laser diode |
| JPWO2013118478A1 (en) * | 2012-02-09 | 2015-05-11 | 富士電機株式会社 | Semiconductor device |
| CN111326949A (en) * | 2018-12-15 | 2020-06-23 | 深圳市中光工业技术研究院 | Laser chip manufacturing method and laser chip |
-
2002
- 2002-03-15 JP JP2002072731A patent/JP2003273441A/en active Pending
Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7371615B2 (en) | 2003-09-18 | 2008-05-13 | Fuji Electric Systems, Co., Ltd. | Heat sink and method for its production |
| CN100416953C (en) * | 2003-12-16 | 2008-09-03 | 浜松光子学株式会社 | Semiconductor laser device and method of producing the same |
| EP1696526A1 (en) * | 2003-12-16 | 2006-08-30 | Hamamatsu Photonics K. K. | Semiconductor laser device and method of producing the same |
| WO2005060057A1 (en) * | 2003-12-16 | 2005-06-30 | Hamamatsu Photonics K.K. | Semiconductor laser device and method of producing the same |
| EP1696526A4 (en) * | 2003-12-16 | 2008-02-27 | Hamamatsu Photonics Kk | Semiconductor laser device and method of producing the same |
| US7486710B2 (en) | 2003-12-16 | 2009-02-03 | Hamamatsu Photonics K.K. | Semiconductor laser device and method of manufacturing the same |
| WO2006006455A1 (en) * | 2004-07-08 | 2006-01-19 | Hamamatsu Photonics K.K. | Semiconductor laser device |
| US7522643B2 (en) | 2004-07-08 | 2009-04-21 | Hamamatsu Photonics K.K. | Semiconductor laser device |
| JP2006294943A (en) * | 2005-04-12 | 2006-10-26 | Sony Corp | Semiconductor laser apparatus and heat sink |
| US8208510B2 (en) | 2005-04-12 | 2012-06-26 | Sony Corporation | Semiconductor laser device and heat sink used therein |
| WO2006137219A1 (en) * | 2005-06-20 | 2006-12-28 | Hamamatsu Photonics K.K. | Heat sink, laser apparatus provided with such heat sink, and laser stack apparatus |
| JP2006352019A (en) * | 2005-06-20 | 2006-12-28 | Hamamatsu Photonics Kk | Heat sink, laser device having the same, and laser stacking device |
| JP4675690B2 (en) * | 2005-06-20 | 2011-04-27 | 浜松ホトニクス株式会社 | Laser stack equipment |
| US7944956B2 (en) | 2005-06-20 | 2011-05-17 | Hamamatsu Photonics K.K. | Heat sink, laser apparatus provided with such heat sink, and laser stack apparatus |
| JP2007184349A (en) * | 2006-01-05 | 2007-07-19 | T Rad Co Ltd | Water-cooled heat sink |
| GB2442484B (en) * | 2006-10-05 | 2008-11-05 | Siemens Magnet Technology Ltd | Heat sinks and methods of making them |
| GB2442484A (en) * | 2006-10-05 | 2008-04-09 | Siemens Magnet Technology Ltd | Heat sink comprising a corrosion resistant surface coating |
| US20120291995A1 (en) * | 2007-05-31 | 2012-11-22 | Sony Corporation | Heat sink and laser diode |
| WO2009052814A2 (en) * | 2007-10-26 | 2009-04-30 | Dirk Lorenzen | Cooling device for semiconductor elements, semiconductor cooling arrangement and method for producing the same |
| WO2009052815A3 (en) * | 2007-10-26 | 2009-08-27 | Dirk Lorenzen | Microchannel heat sink for cooling semiconductor elements and method for treating the surfaces thereof |
| WO2009052817A3 (en) * | 2007-10-26 | 2009-08-27 | Dirk Lorenzen | Corrosion-resistant microchannel heat sink and semiconductor cooling device comprising said microchannel heat sink |
| WO2009052814A3 (en) * | 2007-10-26 | 2009-09-24 | Dirk Lorenzen | Cooling device for semiconductor elements, semiconductor cooling arrangement and method for producing the same |
| DE102007051797B3 (en) * | 2007-10-26 | 2009-06-04 | Jenoptik Laserdiode Gmbh | Corrosion resistant microchannel heat sink |
| DE102007051796A1 (en) | 2007-10-26 | 2009-05-07 | Jenoptik Laserdiode Gmbh | Cooling device for semiconductor devices |
| WO2009052817A2 (en) * | 2007-10-26 | 2009-04-30 | Dirk Lorenzen | Corrosion-resistant microchannel heat sink and semiconductor cooling device comprising said microchannel heat sink |
| WO2009052815A2 (en) * | 2007-10-26 | 2009-04-30 | Dirk Lorenzen | Microchannel heat sink for cooling semiconductor elements and method for treating the surfaces thereof |
| JPWO2013118478A1 (en) * | 2012-02-09 | 2015-05-11 | 富士電機株式会社 | Semiconductor device |
| CN111326949A (en) * | 2018-12-15 | 2020-06-23 | 深圳市中光工业技术研究院 | Laser chip manufacturing method and laser chip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2003273441A (en) | Heat sink, and semiconductor laser device and semiconductor laser stack device using it | |
| WO2005088789A1 (en) | Semiconductor laser equipment | |
| US6297441B1 (en) | Thermoelectric device and method of manufacture | |
| JP4929612B2 (en) | Semiconductor laser device and heat sink | |
| JP4675690B2 (en) | Laser stack equipment | |
| US6970485B1 (en) | Cooling device, semiconductor laser light source device, semiconductor laser source unit, method of manufacturing semiconductor laser light source unit and solid state laser device | |
| JP4224217B2 (en) | Semiconductor laser stack equipment | |
| US7371615B2 (en) | Heat sink and method for its production | |
| JP5846212B2 (en) | Microchannel cooling device, microchannel cooling system, and electronic apparatus | |
| US20040234378A1 (en) | Method and apparatus for low-cost electrokinetic pump manufacturing | |
| US20140319386A1 (en) | Micro-channel-cooled high heat load light emitting device | |
| US7486710B2 (en) | Semiconductor laser device and method of manufacturing the same | |
| JP2008300596A (en) | Heat sink and semiconductor laser device | |
| JP7324837B2 (en) | Heat exchanger for cooling vehicle batteries | |
| EP1605220B1 (en) | Heat sunk, laser module, laser device, and laser-processing device | |
| US20120008655A1 (en) | Heat sink, method of producing same, and semiconductor laser device | |
| JP2006024798A (en) | Semiconductor laser device | |
| WO2016009622A1 (en) | Semiconductor laser device | |
| Treusch et al. | Reliability of water-cooled high-power diode laser modules | |
| JP2009124186A (en) | Cooling device, semiconductor laser light source device, semiconductor laser light source unit, and solid state laser device | |
| JP4305524B2 (en) | Cooling device, semiconductor laser light source device, semiconductor laser light source unit, and solid-state laser device | |
| JP2011067770A (en) | Electrostatic atomizer | |
| JP4984955B2 (en) | Power element mounting unit, power element mounting unit manufacturing method, and power module | |
| JP2001308423A (en) | Cooling block, ld device mounted with it and solid-state laser device using it as excitation light source | |
| CN221202838U (en) | Circuit board heat radiation structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041004 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070809 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070814 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071015 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071204 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080401 |