JP2003270661A - Substrate for liquid crystal display device, liquid crystal display device provided with the same, and defect repair method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a liquid crystal display device used in a display part of an information apparatus or the like, which has short-circuit defects easily repaired to improve the yield of manufacturing and to provide a substrate for the liquid crystal display device and a defect repair method for the liquid crystal display device. <P>SOLUTION: A TFT substrate 100 has a gate electrode forming layer 140 formed on a transparent glass substrate 102, an insulating film 142 formed on the gate electrode forming layer 140, and a drain electrode forming layer 144 formed on the insulating film 142, and an inter-layer short-circuit brought about between the gate electrode forming layer 140 and the drain electrode forming layer 144 through a pinhole part 122 piercing the insulating film 142 and the gate electrode forming layer 140 is repaired by radiating laser light from the side of the TFT substrate 100 to remove a portion of the drain electrode forming layer 144 in the pinhole part 122. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate for a liquid crystal display device used in a display section of information equipment, a liquid crystal display device including the substrate, and a defect repairing method therefor.

[0002]

2. Description of the Related Art A liquid crystal display device includes a thin film transistor (TFT) for each pixel.
The TFT substrate on which r) is formed and the counter substrate arranged so as to face the TFT substrate are bonded together, and liquid crystal is sealed between both substrates.

FIG. 12 shows the configuration of one pixel when a conventional liquid crystal display device is viewed from the TFT substrate side. As shown in FIG. 12, a plurality of gate bus lines 110 extending in the left-right direction in the drawing are formed in parallel with each other on a glass substrate 102 forming a TFT substrate. A drain bus line 11 that intersects the gate bus line 110 via an insulating film (gate insulating film) not shown and extends in the vertical direction in the drawing.
A plurality of 2 are formed in parallel with each other. Each region surrounded by the plurality of gate bus lines 110 and the drain bus lines 112 becomes a pixel region.

A TFT 114 is formed near the intersection of the gate bus line 110 and the drain bus line 112. The drain electrode 118 of the TFT 114 is drawn from the drain bus line 112, and is located on one end side of the operating semiconductor layer formed on the gate bus line 110 and the channel protection film (not shown) formed thereon. Is formed. On the other hand, the TFT 114
The source electrode 120 is formed so as to face the drain electrode 118 with a predetermined gap and to be located on the other end side of the operating semiconductor layer and the channel protective film. The region directly below the channel protection film of the gate bus line 110 is the TFT1.
14 functions as a gate electrode. The source electrode 120 is electrically connected to the pixel electrode 116 via a contact hole (not shown).

The TFT 114 and each bus line 11
0 and 112 are formed by the photolithography process, and "film formation → resist application → development → etching → resist peeling".
It is formed by repeating a series of semiconductor processes.

By the way, the pinhole portion 122 may be formed in the insulating film in the film forming process, for example. When a pinhole portion is formed in a region where conductive layers are stacked with an insulating film sandwiched between them, an interlayer short circuit occurs. In addition, the region exposed by the pinhole portion 122 may be removed in a subsequent process such as development or etching, and the pinhole portion 122 may be formed in the conductive layer.

In FIG. 12, a pinhole portion 122 is formed at the intersection of the gate bus line 110 and the drain bus line 112. The pinhole portion 122 is formed in the gate bus line 110 formed of the gate electrode formation layer and the insulating film. An interlayer short circuit occurs between the gate bus line 110 and the drain bus line 112 via the pinhole portion 122.

FIG. 13 shows another conventional liquid crystal display device as a TF.
The structure seen from the T substrate side is shown. As shown in FIG. 13, an interlayer short circuit occurs between the gate bus line 110 and the source electrode 120 of the TFT 114 via the pinhole portion 122.

FIG. 14 shows a configuration of a conventional liquid crystal display device in which a storage capacitor bus line 124 is formed, viewed from the TFT substrate side. As shown in FIG. 14, the storage capacitor bus line 124 is formed across substantially the center of the pixel region. The storage capacitor bus line 124 is formed of a gate electrode formation layer. The pinhole portion 1 is provided between the storage capacitor bus line 124 and the drain bus line 112.
An interlayer short circuit occurs via 22.

FIG. 15 shows a structure of a liquid crystal display device in which the storage capacitor electrode 126 is formed, as viewed from the TFT substrate side. As shown in FIG. 15, the storage capacitor electrode 126 is
A drain electrode forming layer is formed on the storage capacitor bus line 124. An interlayer short circuit occurs between the storage capacitor bus line 124 and the storage capacitor electrode 126 via the pinhole portion 122.

FIG. 16 shows a so-called Cs-on-Gate.
The structure which looked at the liquid crystal display device of a structure from the TFT substrate side is shown. As shown in FIG. 16, a storage capacitor electrode 127 is formed of a drain electrode forming layer below the pixel region in the figure. A storage capacitor Cs is formed by the storage capacitor electrode 127, the gate bus line 110 adjacent to the lower side in the drawing, and an insulating film (not shown). An interlayer short circuit occurs between the gate bus line 110 and the storage capacitor electrode 127 via the pinhole portion 122.

FIG. 17 is a graph showing drive waveforms for almost two frames of the liquid crystal display device. The horizontal axis represents time,
The vertical axis represents the voltage level. The waveform Vg shows the gate voltage Vg applied to a certain gate bus line 110,
The waveform Vd shows the gradation voltage Vd applied to a certain drain bus line 112. The waveform Vcom indicates the common voltage Vcom applied to the storage capacitor bus line 124 and the common electrode formed on the counter substrate.

Generally, in order to prevent deterioration of the liquid crystal, the liquid crystal display device is driven by frame inversion drive in which the polarity of the gradation voltage Vd is inverted frame by frame with a substantially constant common voltage Vcom as the center.

When the gate pulse voltage Vgon is applied to the gate bus line 110, the gate bus line 11 concerned.
The TFT 114 connected to 0 is turned on. FIG. 17
In the first frame, when the TFT 114 is turned on, the gradation voltage Vd1 is applied to the pixel electrode 116. At this time, a voltage (Vd1-Vcom) which is the difference between the pixel electrode 116 potential and the counter electrode potential is applied to the liquid crystal of the pixel. In the second frame, when the TFT 114 is turned on, the gradation voltage Vd2 is applied to the pixel electrode 116. At this time, the liquid crystal of the pixel has a voltage (Vd2) of the opposite polarity to that of the first frame.
-Vcom) is applied.

When the gate-off voltage Vgoff is applied to the gate bus line 110, the TFT 114 connected to the gate bus line 110 is turned off.
After the grayscale voltage Vd is applied to the pixel electrode 116, TF
In order to surely turn off T114 and hold the gradation voltage until the next frame, the gate-off voltage Vgoff is
It is lower than the minimum level gradation voltage Vd2.

As shown in FIG. 17, the gate bus line 1
The gate-off voltage Vgoff is almost always applied to the gate 10, and the gate bus line 11 is applied only once in one frame.
The gate pulse voltage Vgon is applied only when the TFT 114 whose gate electrode is connected to 0 is turned on.

As shown in FIG. 12, the gate bus line 11
If an interlayer short circuit occurs between 0 and the drain bus line 112, the gate off voltage Vgoff is almost always applied to the drain bus line 112. That is, the drain bus line 1 via the TFT 114
In each pixel connected to 12, the voltage (V
goff-Vcom) is applied and is visually recognized as a line defect on the display screen. Potential difference | Vgoff-Vco
m | is larger than the potential difference | Vd−Vcom | (| Vgo
ff-Vcom |> | Vd-Vcom |), the line defect is displayed as a bright line in the normally black mode liquid crystal display device.

As shown in FIG. 13, the gate bus line 11
0 and the source electrode 120 of the TFT 114 causes an interlayer short circuit, the pixel electrode 116 connected to the source electrode 120 is almost always gate-off voltage Vgoff.
Will be applied. The voltage (Vgof
Since f-Vcom) is applied, it is visually recognized as a point defect on the display screen. In a normally black mode liquid crystal display device, the point defect is displayed as a bright spot.

As shown in FIG. 14, the storage capacitor bus line 1
If an interlayer short circuit occurs between the drain bus line 112 and the drain bus line 112, the common voltage Vcom is almost always applied to the drain bus line 112. That is, in each pixel connected to the drain bus line 112 via the TFT 114, a voltage is almost not always applied to the liquid crystal, and a line defect is visually recognized on the display screen.
In a normally black mode liquid crystal display device, the line defect is displayed as a dark line.

As shown in FIG. 15, the storage capacitor bus line 1
If an interlayer short circuit occurs between the storage capacitor electrode 126 and the storage capacitor electrode 126, the common voltage Vcom is almost always applied to the pixel electrode 116 electrically connected to the storage capacitor electrode 126. That is, almost no voltage is applied to the liquid crystal, and the liquid crystal is visually recognized as a point defect on the display screen. In a normally black mode liquid crystal display device, the point defect is displayed as a dark spot.

As shown in FIG. 16, the gate bus line 11
If an inter-layer short circuit occurs between 0 and the storage capacitor electrode 127, the gate-off voltage Vgoff is almost always applied to the pixel electrode 116 electrically connected to the storage capacitor electrode 127. That is, since a voltage (Vgoff-Vcom) is applied to the liquid crystal layer almost all the time, it is visually recognized as a point defect on the display screen. In a normally black mode liquid crystal display device, the point defect is displayed as a bright spot.

[0022]

In order to repair the interlayer short circuit shown in FIGS. 12 and 14 which is visually recognized as a line defect among the above defects, first, the drain bus line is formed before and after the region where the interlayer short circuit occurs. 112 is cut. Next, T
The drain wiring 112 is electrically connected to the repair wiring formed on the outer peripheral portion of the FT substrate and the peripheral circuit portion for driving the liquid crystal display panel. in this way,
Defects can be repaired by using the repair wiring to bypass the gradation signal.

However, since the process of repairing the interlayer short circuit using the repair wiring is complicated as described above, there is a problem that the manufacturing cost increases. In addition, the number of repair wirings to be formed is limited due to a demand for a narrower frame of the liquid crystal display device. The drain bus line 112 can be repaired by the above method only for the number of repair wirings provided in advance. Therefore, when the number of drain bus lines 112 that is larger than the number of repair wirings causes an interlayer short circuit or the like, the drain bus line 112 is repaired. I can't. In addition, the interlayer short circuit shown in FIGS. 13, 15 and 16 which is visually recognized as a point defect cannot be repaired. Since the liquid crystal display device having these irreparable defects must be discarded, there arises a problem that the manufacturing yield of the liquid crystal display device is reduced.

An object of the present invention is to provide a liquid crystal display device capable of easily repairing a short-circuit defect and improving the manufacturing yield, a liquid crystal display device substrate used therefor, and a defect repairing method thereof.

[0025]

The above object is to form a first conductive layer formed on a transparent substrate, an insulating film formed on the first conductive layer, and an insulating film formed on the insulating film. A liquid crystal including a first substrate having a second conductive layer, a second substrate opposed to the first substrate, and a liquid crystal sealed between the first and second substrates. In a defect repairing method for repairing a defect of a display device, an interlayer short circuit generated between the first and second conductive layers via a pinhole portion penetrating the insulating film and the first conductive layer, This is accomplished by a defect repairing method for a liquid crystal display device, which comprises repairing by irradiating laser light from the first substrate side to remove the second conductive layer in the pinhole portion.

[0026]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A substrate for a liquid crystal display device, a liquid crystal display device including the same and a defect repairing method therefor according to an embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a cross-sectional view showing the configuration of the liquid crystal display device according to the present embodiment. As shown in FIG. 1, the liquid crystal display device includes a TFT substrate 100 in which a TFT is formed for each pixel,
It has a counter substrate 101 arranged to face the TFT substrate 100. The two substrates 100 and 101 are attached to each other with a sealing material 130 applied around them, and a liquid crystal 132 is sealed between the two substrates 100 and 101.

FIG. 2 shows the cross-sectional structure of the intersection of the gate bus line 110 formed of the gate electrode formation layer and the drain bus line 112 formed of the drain electrode formation layer of the TFT substrate 100. As shown in FIG. 2, a TFT substrate 100 having a bottom gate structure has a gate electrode formation layer (first conductive layer) 1 made of, for example, aluminum (Al) having a film thickness of 150 nm on a transparent glass substrate 102.
Has 40. The gate electrode formation layer 140 may be formed of an alloy containing Al as a main component, or may be formed of Al.
Alternatively, it may be formed of a laminated film of an alloy containing Al as a main component and a refractory metal (for example, molybdenum (Mo)).
On the gate electrode formation layer 140, for example, a film thickness of 350 nm
An insulating film (gate insulating film) 142 made of a silicon nitride film (SiN film) is formed. On the insulating film 142, for example, titanium (Ti) and Al are formed in this order to form a drain electrode forming layer (second conductive layer) having a film thickness of 150 nm.
144 is formed.

Next, a method of repairing defects in the liquid crystal display device according to this embodiment will be described. 3 to 5 are process cross-sectional views showing a state in which a defect due to an interlayer short circuit occurs between the gate electrode formation layer 140 and the drain electrode formation layer 144. As shown in FIG. 3, when the insulating film 142 is formed on the gate electrode forming layer 140 formed on the glass substrate 102, the pinhole portion 122 ′ is formed in the insulating film 142.
May be formed. In this case, as shown in FIG. 4, in the process of developing or etching a resist when patterning the upper layer of the insulating film 142 when forming the TFT 114, or removing the natural oxide film on the surface of the operating semiconductor layer, as shown in FIG. The lower gate electrode formation layer 140 is removed, and the pinhole portion 122 penetrating the insulating film 142 and the gate electrode formation layer 140 is formed. In particular, the gate electrode formation layer 140 according to the present embodiment formed of Al or the like.
Is easily corroded by a developing solution used for developing the resist or hydrofluoric acid used for etching, and is easily removed. After that, when the drain electrode formation layer 144 is formed on the insulating film 142, an interlayer short circuit occurs between the gate electrode formation layer 140 and the drain electrode formation layer 144 as shown in FIG.

The pinhole portion 122 can be visually recognized from the back surface side (downward in the figure) of the glass substrate 102 by using a microscope or the like. Therefore, it is possible to identify the short-circuited portion. Therefore, when the pinhole portion 122 ′ is formed in the insulating film 142, the pinhole portion 122 penetrating to the gate electrode formation layer 140 is provided so that the short circuit portion can be easily visually recognized from the back surface side of the glass substrate 102. It is rather preferred that the are formed. When the gate electrode forming layer 140 is formed of Al or an alloy containing Al as a main component or a laminated film of Al or an alloy containing Al as a main component and a refractory metal, the pinhole portion 122 can be easily formed. Become.

FIG. 6 shows a sectional structure of a liquid crystal display device in which a polarizing plate 150 is attached to the back surface of the TFT substrate 100. In this way, the short-circuited portion can be identified even when the polarizing plate is attached to the back surface of the TFT substrate 100.

Next, the pinhole portion 12 as shown in FIG.
A method for repairing a defect in a liquid crystal display device in which an interlayer short circuit has occurred between the gate electrode formation layer 140 and the drain electrode formation layer 144 through Step 2 will be described with reference to FIGS. 7 and 8 are sectional views showing a method of repairing defects in the liquid crystal display device according to the present embodiment. As a premise of the defect repairing method for the liquid crystal display device according to the present embodiment, after the two substrates are bonded to each other to seal the liquid crystal, the pinhole portion 122 is detected from the TFT substrate 100 side by an inspection using a microscope or the like.
The position of is confirmed.

As shown in FIG. 7, from the TFT substrate 100 side (lower side in the drawing) to the pinhole portion 122 of the liquid crystal display device,
Laser light (indicated by an arrow in the figure) is irradiated. At this time, for example, if a YAG laser device with an oscillation wavelength of 1064 nm is used, connection between the other repair wiring and the drain bus line 112 can be performed by the laser device, so that the number of steps can be reduced. Further, as a result, it is possible to implement the defect repairing method for the liquid crystal display device according to the present embodiment by utilizing the defect repairing device that has been conventionally used, and thus it is possible to reduce the initial cost.

The laser beam applied to the pinhole portion 122 is the drain electrode forming layer 144 in the pinhole portion 122.
Melt / scatter. As a result, as shown in FIG.
The gate electrode formation layer 140 and the drain electrode formation layer 144 that have been short-circuited are electrically separated.

FIG. 9 shows a modification of the defect repairing method for the liquid crystal display device according to this embodiment. As shown in FIG. 9, the laser light is emitted with a width W2 wider than the width W1 of the pinhole portion 122. In this way, the laser light is seen in the direction perpendicular to the surface of the glass substrate 122, and the pinhole portion 12
Irradiation may be performed in a range wider than 2.

FIG. 10 is a graph showing the relationship between the irradiation energy of laser light and the degree of melting of the gate electrode formation layer 140 and the drain electrode formation layer 144. The horizontal axis represents the irradiation energy of laser light, and the vertical axis represents the degree of melting. A curve A shows the degree of melting of the drain electrode forming layer 144, and a curve B shows the degree of melting of the gate electrode forming layer 140. As shown in FIG. 10, when the irradiation energy is less than the energy E1, the drain electrode forming layer 1
44 is not melted sufficiently and the short circuit defect cannot be repaired. Further, when the irradiation energy is larger than the energy E2, the gate electrode formation layer 140 is melted and the gate electrode formation layer 140 and the drain electrode formation layer 144 are electrically connected. That is, if laser light having irradiation energy of energy E1 or more and energy E2 or less is used,
As shown in FIG. 9, the short-circuit defect can be repaired by irradiating the area wider than the pinhole portion 122 with the laser light. Since the irradiation range of the pinhole portion 122 is widened, it is easy to repair the short-circuit defect.

For example, in the liquid crystal display device according to the present embodiment, when laser light having an irradiation energy of 0.5 μJ or more (irradiation spot size is 8 μm square) is irradiated, the drain electrode forming layer 144 in the pinhole portion 122 is formed. Melts sufficiently. Further, when the laser light having the irradiation energy of 2.2 μJ or more is irradiated, the gate electrode formation layer 140 is melted. Therefore, in this embodiment, E1 = 0.6
μJ and E2 = 2.2 μJ.

It is desirable that the laser beam is irradiated once. The laser light irradiated with the irradiation energy in the above range is likely to melt the gate electrode formation layer 140 as the irradiation frequency increases, and the curve B moves to the left in the graph shown in FIG. . By setting the number of times of laser light irradiation to a minimum of 1, the probability that the gate electrode formation layer 140 and the drain electrode formation layer 144 are electrically connected can be reduced, and the short-circuit defect can be reliably repaired. .

Further, the gate electrode forming layer 140 may be formed thicker than the drain electrode forming layer 144. The irradiation energy of the laser beam required for melting the metal layer depends on the film thickness of the metal layer. Therefore, if the film thickness of the gate electrode forming layer 140 increases, the gate electrode forming layer 14
The irradiation energy E2 for melting 0 increases. If the difference in film thickness between the gate electrode formation layer 140 and the drain electrode formation layer 144 increases, the curve B in the graph shown in FIG. 10 moves relatively to the right, and the irradiation energy allowable range becomes wider.

FIG. 11 shows a modified example of the defect repairing method for the liquid crystal display device according to the present embodiment, which shows the TF after the pinhole portion 122 is irradiated with laser light of a predetermined irradiation energy.
The cross-sectional structure of the T substrate 100 is shown. As shown in FIG. 11, the drain electrode forming layer 144 has the pinhole portion 12
The distance L1 from the end of No. 2 is removed in the range of 1.5 times or more of the film thickness D1 of the insulating film 142. By irradiating the drain electrode formation layer 144 with laser light so that the drain electrode formation layer 144 is removed in a wider area than the pinhole portion 122, a leak current generated between the gate electrode formation layer 140 and the drain electrode formation layer 144 can be reduced, which is reliable. Can repair short circuit defects.

In the defect repairing method for the liquid crystal display device according to this embodiment, the polarizing plate 15 is provided on the back surface of the TFT substrate 100.
It is possible even after 0 is pasted. Therefore, the short-circuit defect can be repaired even in the process after confirming the defect position by the lighting display inspection of the liquid crystal display device.

Further, in the defect repairing method for the liquid crystal display device according to this embodiment, the gate electrode forming layer 140 and the insulating film 1 are used.
If the pinhole portion 122 is formed in 42, and an interlayer short circuit occurs between the gate electrode formation layer 140 and the drain electrode formation layer 144 via the pinhole portion 122, it can be applied to a conventional liquid crystal display device.

According to this embodiment, the interlayer short circuit between the gate electrode formation layer 140 and the drain electrode formation layer 144 shown in FIGS. 12 and 14 which is visually recognized as a line defect is repaired without using the repair wiring. it can. For this reason, the interlayer short circuit generated in the drain bus lines 112 larger than the number of repair wirings can be easily repaired without causing new point defects. Further, according to the present embodiment, the interlayer short circuit shown in FIGS. 13, 15 and 16 which is visually recognized as a point defect can be easily repaired. Therefore, the number of steps of the defect repair process of the liquid crystal display device can be reduced, and a liquid crystal display device with a high manufacturing yield can be realized.

The present invention is not limited to the above embodiment, but various modifications can be made. For example, in the above embodiment, the bottom-gate type liquid crystal display device substrate has been described as an example, but the present invention is not limited to this and is also applicable to a top-gate type liquid crystal display device substrate.

The substrate for a liquid crystal display device, the liquid crystal display device including the same and the defect repairing method therefor according to the embodiments described above can be summarized as follows. (Supplementary Note 1) A first conductive layer formed on a transparent substrate, an insulating film formed on the first conductive layer, and a second conductive layer formed on the insulating film. A first substrate, a second substrate facing the first substrate, and the first substrate
And a liquid crystal sealed between a second substrate and a defect repairing method for repairing a defect of a liquid crystal display device, wherein the insulating film and the first conductive layer are penetrated through a pinhole portion. An interlayer short circuit between the first and second conductive layers,
A method for repairing defects in a liquid crystal display device, which comprises repairing by irradiating a laser beam from the first substrate side to remove the second conductive layer in the pinhole portion.

(Supplementary Note 2) In the defect repairing method for a liquid crystal display device according to Supplementary Note 1, the laser light is applied with an irradiation energy such that the first conductive layer is not melted but the second conductive layer is melted. A defect repairing method for a liquid crystal display device, comprising:

(Supplementary Note 3) The defect repairing method for a liquid crystal display device according to Supplementary Note 1 or 2, wherein the laser beam is irradiated only once.

(Supplementary note 4) In the defect repairing method for a liquid crystal display device according to any one of supplementary notes 1 to 3, the laser light is in a range wider than the pinhole portion when viewed in a direction perpendicular to the substrate surface. A method for repairing defects in a liquid crystal display device, which is characterized by being irradiated.

(Additional remark 5) In the defect repairing method for a liquid crystal display device according to any one of additional remarks 1 to 4, the laser beam has a distance from an end of the pinhole portion to a film thickness of the insulating film. The method for repairing defects in a liquid crystal display device is characterized in that irradiation is performed so as to remove the second conductive layer in a range of 1.5 times or more of the above.

(Supplementary Note 6) In the defect repairing method for a liquid crystal display device according to any one of Supplementary Notes 1 to 5,
A method for repairing defects in a liquid crystal display device, wherein a polarizing plate is attached to the back surface of the substrate.

(Supplementary Note 7) A single layer film of aluminum or an alloy containing aluminum as a main component, or aluminum or aluminum is mainly used so that the transparent substrate and the region in which the pinhole portion is formed are easily removed. A first conductive layer formed on the substrate by a laminated film of an alloy as a component and a refractory metal, an insulating film formed on the first conductive layer, and formed on the insulating film A substrate for a liquid crystal display device, comprising a second conductive layer.

(Supplementary Note 8) In the liquid crystal display device substrate according to Supplementary Note 7, the first conductive layer has a thickness larger than that of the second conductive layer. substrate.

(Supplementary Note 9) In the defect repairing method for a liquid crystal display device according to any one of Supplementary Notes 1 to 6, the first
9. The defect repairing method for a liquid crystal display device, wherein the substrate for a liquid crystal display device according to appendix 7 or 8 is used as the substrate.

(Supplementary note 10) A liquid crystal display device comprising two substrates which are opposed to each other and a liquid crystal which is sealed between the substrates, wherein one of the substrates has the liquid crystal according to supplementary note 7 or 8. A liquid crystal display device using a substrate for a display device.

[0054]

As described above, according to the present invention, it is possible to realize a liquid crystal display device capable of easily repairing a short circuit defect and improving the manufacturing yield.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a configuration of a liquid crystal display device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a configuration of a liquid crystal display device substrate according to an embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating a defect repairing method for a liquid crystal display device according to an embodiment of the present invention.

FIG. 4 is a sectional view illustrating a defect repairing method for a liquid crystal display device according to an embodiment of the present invention.

FIG. 5 is a cross-sectional view illustrating a defect repairing method for a liquid crystal display device according to an embodiment of the present invention.

FIG. 6 is a cross-sectional view illustrating a defect repairing method for a liquid crystal display device according to an embodiment of the present invention.

FIG. 7 is a cross-sectional view showing a defect repairing method for a liquid crystal display device according to an embodiment of the present invention.

FIG. 8 is a cross-sectional view showing a defect repairing method for a liquid crystal display device according to an embodiment of the present invention.

FIG. 9 is a cross-sectional view showing a modified example of the defect repairing method for the liquid crystal display device according to the embodiment of the present invention.

FIG. 10 is a graph showing the relationship between the irradiation energy of laser light and the degree of melting of the gate electrode formation layer and the drain electrode formation layer.

FIG. 11 is a cross-sectional view showing another modification of the defect repairing method for the liquid crystal display device according to the embodiment of the present invention.

FIG. 12 is a diagram showing a configuration of a conventional liquid crystal display device.

FIG. 13 is a diagram showing a configuration of a conventional liquid crystal display device.

FIG. 14 is a diagram showing a configuration of a conventional liquid crystal display device.

FIG. 15 is a diagram showing a configuration of a conventional liquid crystal display device.

FIG. 16 is a diagram showing a configuration of a conventional liquid crystal display device.

FIG. 17 is a diagram showing drive waveforms of a liquid crystal display device.

[Explanation of symbols]

100 TFT substrate 101 counter substrate 102 glass substrate 110 gate bus line 112 drain bus line 114 TFT 116 pixel electrode 118 drain electrode 120 source electrode 122, 122 'Pinhole part 124 Storage capacity bus line 126, 127 storage capacitor electrodes 130 sealing material 132 LCD 140 Gate electrode forming layer 142 insulating film 144 drain electrode forming layer 160 Polarizer

   ─────────────────────────────────────────────────── ─── Continued front page    F term (reference) 2H088 FA15 HA02 HA04 KA29 MA20                 2H092 JA25 JA26 JA37 JA41 JB22                       JB31 JB38 JB56 JB73 KA18                       KB04 KB25 MA48 NA29                 5F110 AA27 BB01 CC03 DD02 EE03                       EE04 EE14 FF03 HK03 HK04                       HK21 NN72 NN73

Claims (5)

[Claims] 1. A first conductive layer formed on a transparent substrate,
A first substrate having an insulating film formed on the first conductive layer and a second conductive layer formed on the insulating film;
A defect repairing method for repairing a defect of a liquid crystal display device, comprising: a second substrate facing the first substrate; and a liquid crystal sealed between the first and second substrates. The interlayer short circuit generated between the first and second conductive layers via the pinhole portion penetrating the film and the first conductive layer is irradiated with laser light from the side of the first substrate, A defect repairing method for a liquid crystal display device, which comprises repairing by removing the second conductive layer in a pinhole portion. 2. The defect repairing method for a liquid crystal display device according to claim 1, wherein the laser light is applied with an irradiation energy that does not melt the first conductive layer but melts the second conductive layer. A defect repairing method for a liquid crystal display device, comprising: 3. A transparent substrate, and a single-layer film made of aluminum or an alloy containing aluminum as a main component, or aluminum or aluminum as a main component, so that a region in which a pinhole portion is formed is easily removed. A first conductive layer formed on the substrate by a laminated film of an alloy for forming a high melting point metal, an insulating film formed on the first conductive layer, and a second film formed on the insulating film. A substrate for a liquid crystal display device. 4. The substrate for a liquid crystal display device according to claim 3, wherein the first conductive layer has a thickness larger than that of the second conductive layer. . 5. A liquid crystal display device comprising two substrates arranged to face each other and a liquid crystal sealed between the substrates, wherein one of the substrates has the liquid crystal display according to claim 3 or 4. A liquid crystal display device using a device substrate.