JP2003268545A - Film deposition system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition system with which the warpage of a substrate is suppressed in a stage of removing moisture from the substrate, so that film deposition can satisfactorily be performed, and both a stage of removing moisture from the substrate and the stage of depositing the film on the substrate can be performed in one stage. <P>SOLUTION: The film deposition system is provided with a drying apparatus with a microwave generator in a frequency of 2.45 GHz and an output of 1.5 kW. microwaves are oscillated at 2.45±0.015 GHz from the microwave oscillator 200. The oscillated microwaves are introduced into a vacuum tank 101 through a low loss coefficient material 202, and is applied from the back side of a substrate 100 (the side in contact with a holder 302) to the substrate 100. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a liquid crystal and an organic EL.
The present invention relates to a film forming apparatus used in a manufacturing process of a circuit board in which a circuit including a thin film transistor and wiring is formed on a plastic substrate, which is used in a display device including (Electro Luminescence), an inorganic EL, or the like.

[0002]

2. Description of the Related Art Conventional LSIs in the semiconductor field
For thin film laminated devices such as (Large Scale Integration) and liquid crystal displays, hard substrates that hardly absorb moisture, such as silicon wafers and glass substrates, have been used for a long time.

However, recent IT (Information
Due to the revolution and technological innovation, devices are required to have portability and flexibility. Therefore, a plastic substrate has been attracting attention as an example of a lightweight and highly flexible substrate, and research and technological development for manufacturing an element such as a transistor on the plastic substrate have been actively conducted.

However, in general, plastic has a very high water absorption property and has the property of releasing water when the temperature rises. Chemical Va
In the vacuum film forming process using a por deposition apparatus, it is necessary to sufficiently remove the water absorbed by the plastic substrate in the photolithography process or the peeling / cleaning process in the previous process before film formation.

FIG. 4 shows a film forming apparatus for drying a substrate by a conventional heating device. In the conventional film forming apparatus shown in FIG. 4, a hot plate 104 for heating the plastic substrate 100 is provided inside a vacuum chamber 101 in which air is sucked by a vacuum pump 102 to be in a vacuum state. Then, with the plastic substrate 100 placed on the hot plate 104, the heater 103
The hot plate 104 is heated by the electric current flowing therethrough. As a result, the plastic substrate 100 is heated and the water content of the plastic substrate 100 is removed.

On the other hand, Japanese Patent Laid-Open No. 2-287934 discloses another method for removing water from a plastic substrate. As shown in FIG. 5, the plastic substrate 100 is placed on the substrate holder 302 in the oven 301 having no vacuum evacuation means, and moisture is removed from the plastic substrate 100 by heating with the microwave from the microwave generator 200. It In this method, after the water is removed, the plastic substrate 100 from which the water is removed
Must be transported to the film forming apparatus.

[0007]

When the water content of the plastic substrate is removed by using the heating device in the film forming apparatus of the prior art, there are the following problems.

If the heating device in the conventional film-forming apparatus is used to remove the moisture from the plastic substrate, the heat conduction to the plastic substrate is poor, so that there is a problem that heat is not readily transmitted to the moisture. Further, since the vacuum film formation process is a very important process that affects device characteristics, it is necessary to sufficiently remove water before film formation. Therefore, when a film is formed using a conventional film forming apparatus, baking is performed for a long time of about 1 hour using a heating device before film formation.

In order to carry out the above-mentioned long-time heating in a short time, it may be considered to heat at a high temperature, but since plastic has a lower heat resistance than silicon wafers and glass, various problems occur when heated at a high temperature. Occurs. Therefore, when a device is formed on a plastic substrate by using a film forming apparatus provided with a conventional heating device, it is necessary to heat the substrate for a long time in the vacuum film forming process, which is an important factor in productivity. It is a very big issue from a viewpoint.

Further, in the conventional heater heating method, since the plastic has a low thermal conductivity, the temperature and the amount of water absorbed in the plastic substrate become uneven, and the plastic substrate warps during heating. If film formation is started in a state where the plastic substrate is warped, a portion of the plastic substrate that does not reach the required film formation temperature will be generated, resulting in uneven distribution of film quality and film thickness.
In order to prevent the occurrence of uneven distribution in film quality and film thickness, the conventional film forming apparatus is provided with a warpage preventing jig 105 as shown in FIG. 4 for suppressing the warp of the substrate.

However, since it is not easy to suppress the warp in the film forming apparatus, the wiring pattern or the like may not be formed well, and the warp prevention jig 1 may be used.
Since 05 has a complicated device configuration, there is a problem that the manufacturing cost increases.

Further, when the water content of the plastic substrate is removed by using the microwave heating device of the prior art,
Since the process of removing moisture by microwave heating and the film forming process of forming a film on the substrate after that must be performed separately, two dedicated devices are required. There is a problem that the cost of the apparatus increases because a mechanism for preventing absorption of water is further required.

The present invention has been made in view of the above-mentioned problems. A first object of the present invention is to perform good film formation while suppressing the occurrence of warpage of the substrate in the process of removing water from the substrate. In addition to the above, it is an object of the present invention to provide a film forming apparatus capable of performing the step of removing water from a substrate and the step of forming a film on the substrate with one apparatus.

Further, since the process steps in the LSI and the display device are complicated, the water absorption amount of the plastic substrate before each step is often different due to the difference in the film structure on the plastic substrate and the processing conditions of the previous step. Also,
The amount of residual water before film formation is an important parameter because removal of water in the vacuum film formation process greatly affects device characteristics.

However, in the conventional film-forming apparatus, there is a problem in that the water absorption state of the plastic substrate immediately before the film formation cannot be known because there is a time interval between the removal of water from the plastic and the film formation.

The present invention has been made in view of the above problems, and a second object thereof is to provide a film forming apparatus capable of grasping the water absorption state of a substrate.

Further, as a peculiar property of microwaves,
It has the property of being reflected by the metal surface. In the structure of the conventional heating device that uses microwaves, microwaves are radiated from the surface of the substrate, so if there is a metal film such as wiring on the plastic substrate, the microwaves will be reflected by the metal There is a problem that microwaves do not hit. For this reason, there are problems that the evaporation of water becomes uneven and the processing time becomes long.

The present invention has been made in view of the above problems, and a third object thereof is to provide a film forming apparatus capable of preventing unevenness in water evaporation of a substrate.

[0019]

A film forming apparatus of the present invention includes a chamber for forming a film on a substrate therein, a holder for holding the substrate in the chamber, and a substrate held by the holder for drying. And a drying means for causing the drying means to evaporate the water content of the substrate using the microwave generated by the microwave generator.

According to the above construction, since the microwave is used to remove the water content of the substrate, it is possible to heat and evaporate the water by vibrating only the water molecules without heating the substrate itself. Therefore, the warp of the substrate due to heating the substrate is suppressed.
As a result, for example, in the step of forming the wiring pattern on the substrate, it is possible to prevent the wiring pattern from being satisfactorily formed due to the misalignment between the substrate and the wiring pattern. Further, since the step of removing the water content of the substrate can be performed in the film forming apparatus, there is no need for a step of drying using a drying device in addition to the film forming apparatus.

In the film forming apparatus of the present invention, it is preferable that the microwave generator is installed at a position facing the main surface of the substrate, and the microwave is irradiated substantially perpendicularly to the main surface of the substrate.

According to the above structure, the microwave can be efficiently introduced into the substrate by irradiating the main surface of the substrate with the microwave substantially perpendicularly, so that the time for removing the moisture can be increased. It can be shortened.

In the film forming apparatus of the present invention, the microwave generator is provided outside the chamber, and the chamber is mainly composed of a low loss coefficient material having a microwave loss coefficient lower than that of other portions. Is preferred.

According to the above arrangement, the microwaves can reach the substrate without being attenuated as much as possible, so that the power consumption of the microwave generator can be reduced.

The film forming apparatus of the present invention is further provided with a grounding jig for preventing electrification of the substrate when metal wiring is provided on the main surface of the substrate. It may be configured so that the potential of the metal wiring can be fixed.

According to the above construction, by removing the electric charges charged on the main surface of the substrate, it is possible to prevent the metal wirings on the substrate from being short-circuited with each other, so that the yield in the manufacturing process can be improved. it can.

The film forming apparatus of the present invention further comprises a reflection plate for reflecting microwaves in the chamber, and the reflection plate is configured to reflect the microwaves introduced into the chamber to the substrate. It is preferable.

According to the above structure, since the microwave reflected by the reflecting plate is irradiated from the surface side of the substrate other than the surface facing the microwave generator, the moisture in the substrate is efficiently removed. be able to. Therefore, the power consumption of the microwave generator can be reduced.

The film forming apparatus of the present invention further comprises a movable mechanism for moving the holder, and the movable mechanism holds the main surface of the substrate uniformly with the microwave generated from the microwave generator. Is preferably movable.

According to the above structure, unevenness in the removal of water from the substrate is prevented, and the water can be removed at high speed, so that power consumption can be reduced.

The film forming apparatus of the present invention further comprises a moisture sensor for detecting the amount of moisture generated from the substrate, and a display monitor for displaying the amount of moisture detected by the moisture sensor. preferable.

With the above arrangement, it is possible to remove the moisture from the substrate while successively monitoring the amount of the moisture generated from the substrate. Therefore, by removing the water while estimating the amount of the water remaining on the substrate, the drying time can be shortened.

The film forming apparatus of the present invention preferably further comprises a decompression device for decompressing the inside of the chamber.

According to the above construction, by reducing the pressure in the chamber by using the decompression device, it is possible to prevent the state where the electric charge remains attached to the surface of the substrate, so that the wiring is formed on the substrate. It is possible to prevent the wirings from being short-circuited with each other.

In the film forming apparatus of the present invention, when the metal wiring is provided on one main surface of the substrate, the holder is arranged so that the microwave is introduced into the substrate from the other main surface side of the substrate. It may be configured to be able to hold the substrate.

According to the above structure, the microwave generated from the microwave generator is introduced into the substrate without being blocked by the metal wiring, so that the moisture removal efficiency of the substrate can be improved.

[0037]

BEST MODE FOR CARRYING OUT THE INVENTION A film forming apparatus according to an embodiment of the present invention will be described below with reference to the drawings.

(Embodiment 1) The film forming apparatus of the present embodiment will be described with reference to FIG. Note that FIG.
FIG. 3 is a cross-sectional view of the film forming apparatus of this embodiment.

The film forming apparatus of this embodiment has a volume of 0.0
A vacuum chamber 101 made of 5 m ³ made of SUS304 and having a water content monitor 204 and a size of quartz glass 6
A 0 × 60 mm ² substrate holder 302 is provided, and a plastic substrate 100 made of epoxy resin and having a size of 50.8 × 50.8 mm ² is arranged on the substrate holder 302. This plastic substrate 10
For 0, for example, a metal film made of tantalum or a wiring pattern is formed.

A ground jig 206 made of SUS321 is provided on the peripheral edge of the substrate holder 302 so as to be in contact with the metal film (metal wiring portion) of the plastic substrate 100.

Further, a low loss coefficient material 202, which will be described later, is provided under the substrate 302, and the low loss coefficient material 202 is provided.
54.6 mm in length x 109.2 mm in width (JIS standard WRJ-2) x length 300 m made of aluminum
m waveguide 201 is arranged. This waveguide 201
An air-cooled isolator 203 is provided on the side wall of the. The microwave generator 20 is provided below the waveguide 201.
0 is placed.

Further, at the base of the side wall of the vacuum chamber 101,
There is a microwave introduction point, and this introduction point has a length of 54.6 mm and a width of 109.
A low-loss-coefficient material 202 having a size of 2 mm × thickness of 50 mm and having a lower microwave transmission loss than other portions is arranged.

The vacuum chamber 1 is provided outside the vacuum chamber 101.
A vacuum pump 102 for reducing the pressure inside 01 is arranged.

In the above structure, the vacuum pump 102 is
The air in the vacuum chamber 101 is drawn out, and the atmospheric pressure in the vacuum chamber 101 is set to 10 ⁻⁶ Pa, which is the degree of vacuum required for film formation.

Next, the microwave generated by the microwave generator 200 passes through the waveguide 201 and the low-loss-coefficient material 202 installed in the vacuum chamber 101, and the vacuum chamber 101.
Guide inside.

Here, in the drying device provided in the film forming apparatus of this embodiment, a microwave generator having a frequency of 2.45 GHz and an output of 1.5 KW used in a microwave oven is used. 2.45 ± 0.015GH from generator
The microwave is oscillated by z, and the oscillated microwave is introduced into the vacuum chamber 101 through the waveguide 201 and the low loss coefficient material 202. Then, the introduced microwave is applied to the substrate 100 from the back surface (the surface side in contact with the holder) of the substrate 100.

Further, the substrate holder 302 used in the drying device provided in the film forming apparatus of this embodiment is made of quartz glass which has high heat resistance and allows microwaves to pass through well. Therefore, the microwave oscillated from the microwave generator 200 is transmitted without interruption and the substrate 10
It is transmitted to 0.

Furthermore, the substrate holder 302 is provided with a grounding jig 206 which is grounded, and the metal wiring portion on the plastic substrate 100 is grounded (potential is fixed) by the grounding jig 206. Therefore, the microwave prevents the plastic substrate 100 from being charged. If the metal wiring on the plastic substrate 100 is short-circuited around the plastic substrate 100, the metal wiring can be prevented from being broken. As a result, it is possible to reduce the manufacturing cost of the product.

Further, when the metal is irradiated with microwaves in a vacuum state, electric charges are generated in the metal part, but when the electrically weak insulator film is in contact with the metal part, a high electric field is applied to the insulator film. May result in dielectric breakdown. Since the plastic substrate 100 is electrically weaker than the glass substrate, when a high electric field is applied to the plastic substrate 100, dielectric breakdown may occur and short circuit may occur. In the film forming apparatus of this embodiment mode, by using a vacuum device, the plastic substrate 100
Since the electric charge of the metal part on the surface of the plastic substrate 100 can be removed, the short circuit of the plastic substrate 100 can be prevented.

Next, when the plastic substrate 100 is irradiated with microwaves, the inside of the vacuum chamber 101 is decompressed, so that the plastic substrate 1 is irradiated even if the irradiation intensity is low.
Sufficient kinetic energy can be supplied to the water molecules in 00, and the water in the plastic substrate 100 can be efficiently removed. That is, energy conversion (microwave-thermal energy) efficiency can be improved. Therefore, the power consumption of the drying device can be reduced, and the manufacturing cost can be reduced.

Generally, the heat conversion power loss P when the microwave hits the substance is expressed by the following proportional expression.

P ∝ εr × tan δ εr: relative permittivity of substance, tan δ: dielectric loss angle of substance, εr
× tan δ: loss factor (loss factor at 3 GHz: water = about 12, plastic =
About 0.001, glass = about 0.06) According to the above equation, microwave heats a substance with a large loss coefficient such as moisture by vibrating the substance thermally,
It has a characteristic that it hardly permeates a substance having a small loss coefficient such as glass or plastic and transmits the substance. When microwaves are applied to the plastic substrate 100 that absorbs moisture, the microwaves can heat and evaporate only the moisture without heating the plastic itself. It is possible to irradiate the output microwave, and it is possible to instantly remove the moisture evenly.

Furthermore, since the water is drawn by the vacuum pump, the water can be removed in a short time, and the vacuum in the vacuum chamber 101 suppresses the attenuation of the microwaves. Further, since the moisture inside the plastic substrate 100 is directly heated, there is no unevenness in temperature and water absorption, and the plastic substrate does not warp. Further, since the microwave is used to remove the water from the plastic substrate 100, the water can be directly heated and evaporated. Therefore, due to the warp of the plastic substrate 100,
It is possible to prevent the pattern from being satisfactorily formed due to the misalignment between the plastic substrate and the wiring pattern when the wiring pattern is formed on the plastic substrate. Therefore, the manufacturing cost of the product can be reduced.

Further, in the drying device provided in the film forming apparatus of this embodiment, microwaves are applied from the back surface of the plastic substrate (the surface side in contact with the holder on which the metal wiring is not formed). Therefore, the plastic substrate 1
The microwaves can be efficiently introduced into the plastic substrate 100 without being blocked or reflected by the metal wiring (or the metal film formed on the entire surface) formed on the metallization 00. As a result, the power consumption of the drying device can be reduced, so that the manufacturing cost of the product can be reduced.

Further, an isolator 203 is provided on the inner wall of the waveguide 201. Therefore, the reflected wave from the opposite direction (a part of the microwave is reflected on the surface of the substrate holder 302, transmitted through the plastic substrate, and propagated to the microwave generator 200 side) is suppressed, and the microwave generated by the reflected wave is suppressed. Generation of wave transmission loss can be suppressed.
Therefore, low power consumption can be achieved.

Further, in the drying device provided in the film forming apparatus of this embodiment, in order to increase the efficiency of energy conversion (microwave-thermal energy), the rotary metal reflector is provided above the plastic substrate 100. 205 is installed, by which microwaves penetrating the plastic substrate 100 are reflected and irradiated again to the plastic substrate.

Therefore, the microwaves can be irradiated from both sides of the substrate, and the moisture in the substrate can be removed efficiently, so that the drying efficiency can be improved.

Here, in the drying device provided in the film forming apparatus of the present embodiment, a metal film is formed (metal wiring is formed) on the front surface side of the plastic substrate 100.
When there is no metal film on the surface side, microwaves may be irradiated from the surface side as well because the efficiency of removing water can be improved.

Further, in the drying apparatus provided in the film forming apparatus of this embodiment, the substrate holder 302 is a fixed type, but a rotary type substrate holder may be used.
In this case, since the plastic substrate rotates in the vacuum chamber 101, the microwaves reflected by the rotary metal reflection plate 205 are evenly applied to the substrate 100 to prevent unevenness in water removal, and at a high speed. Can be removed.

Further, the drying device provided in the film forming apparatus of the present embodiment has a water content monitor 204 in the vacuum chamber 101.
Is installed, it is possible to monitor the amount of water in the plastic substrate 100 at the time of microwave irradiation. By monitoring the water content, the water removal processing conditions can be automatically controlled. As a result, moisture can be removed while successively monitoring the water absorption state of the plastic substrate 100, so that the heating time can be shortened and the manufacturing cost of the product can be reduced.

Further, since the vacuum chamber is provided, it is possible to provide a vacuum gauge, a mass spectrometer and the like, so that it is possible to monitor the amount of water removed from the plastic substrate 100 by using them. Then, the obtained data can be fed back to the microwave generator 200 to automatically control the moisture removal processing condition. By using the drying device of this embodiment, it is possible to know the plastic water absorption state before film formation in the film forming device and prevent deterioration of the formed film and device characteristics due to residual moisture.

FIG. 2 shows an epoxy-based plastic substrate (size 50.8 mm × 50.8 m) which is immersed in water and absorbs water.
The experimental data of the H ₂ O partial pressure measured by the mass spectrometer when the microwave is irradiated to (m × 0.2 mm) are shown. In addition, FIG. 2 also shows experimental data of H ₂ O partial pressure when a resistance heater which is a conventional technique is used.

It can be seen from FIG. 2 that the moisture can be removed more quickly by using the microwave drying method than the conventional heater heating method.

Further, in Table 1, after the moisture removal time before film formation was performed for 10 minutes by the plasma CVD apparatus, n ⁺ -S
Data showing the comparison of the resistance values when i is deposited is shown. That is, Table 1 shows the partial pressure of H ₂ O and the resistance value data of the n ⁺ -Si film during 10 minutes before the film formation bake of the plastic substrate 100.

[0065]

[Table 1]

In the conventional heater heating method, the resistance value of n ⁺ -Si is very high because the water content cannot be sufficiently removed, but in the microwave drying method, the resistance value of n ⁺ -Si is the production specification. It is 20 GΩ or less. From the experimental results of the inventors of the present application, it is known that the resistance value of n ⁺ -Si does not decrease unless the H ₂ O partial pressure becomes 10 ⁻⁴ Pa or less, so that the H ₂ O partial pressure is 10 ⁻⁴ Pa. The film formation is set not to start until the following.

Further, since there is a possibility that electric discharge will occur when microwaves are radiated at a low degree of vacuum (in the present experimental apparatus, electric discharge occurred at about 10 Pa). The vacuum chamber 101 is controlled so as not to occur. However, in the drying device provided in the film forming apparatus of the embodiment, the pressure gauge is omitted in the figure.

(Embodiment 2) A drying apparatus provided in the film forming apparatus of this embodiment will be described with reference to FIG.

The drying device provided in the film forming apparatus of the present embodiment considers the case where a substance that blocks microwaves is present in the plastic substrate 100 or the time for removing moisture is further shortened. The microwave generator 200, the waveguide 201, and the low-loss-coefficient material 202 are provided at both the position facing the back surface side and the position facing the front surface side of 100.

In the drying device provided in the film forming apparatus of this embodiment, microwaves are radiated from both sides of the plastic substrate 100 almost vertically. Therefore, the rotary metal reflection plate 205 in the drying device according to the first embodiment is not provided.

Further, in the film forming apparatus of the present embodiment, the plastic substrate made of the epoxy resin having the metal wiring pattern is used as the material to be dried by the drying apparatus, but the metal film is formed on the entire surface of the substrate. Alternatively, a plastic substrate provided with or a plastic substrate not provided with a pattern may be used. In addition, a substrate in which carbon fiber, an inorganic substance, or the like is contained in the resin may be used.

Further, the substrate material is not limited to the epoxy type,
If it is a resin substrate, it may be an acrylic resin, a polyimide resin, an aramid resin, or a polycarbonate resin.

The drying apparatus provided in the film forming apparatus of the present embodiment can be applied to various film forming apparatuses as long as it is an apparatus that accompanies a substrate drying process such as a plasma CVD apparatus and a sputtering apparatus. . In particular, in a film forming apparatus that requires a vacuum chamber, after the drying process, film formation can be continuously performed while maintaining a vacuum state, so that power consumption can be reduced. Furthermore, since the adhesion of dust can be prevented, the manufacturing yield of products can be improved.

It should be understood that the embodiments disclosed this time are illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description but by the scope of the claims, and is intended to include meanings equivalent to the scope of the claims and all modifications within the scope.

[0075]

According to the film forming apparatus of the present invention, since microwaves are used for removing water from the substrate, only the water molecules are vibrated to heat and evaporate by heating only the substrate itself. be able to. Therefore, the warp of the substrate due to heating the substrate is suppressed. As a result, for example, in the step of forming the wiring pattern on the substrate, it is possible to prevent the wiring pattern from being satisfactorily formed due to the misalignment between the substrate and the wiring pattern. Further, since the step of removing the water content of the substrate can be performed in the film forming apparatus, there is no need for a step of drying using a drying device in addition to the film forming apparatus.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a film forming apparatus provided with a drying device according to a first embodiment of the present invention.

FIG. 2 is experimental data of H ₂ O partial pressure when a plastic substrate is irradiated with microwaves.

FIG. 3 is a sectional view of a film forming apparatus provided with a drying device according to a second embodiment of the present invention.

FIG. 4 is a cross-sectional view of a film forming apparatus provided with a drying device using a heating device according to the related art.

FIG. 5 is a cross-sectional view of a conventional microwave drying apparatus.

[Explanation of symbols]

100 plastic substrate, 101 vacuum chamber, 102
Vacuum pump, 103 heater, 104 hot plate, 105 warpage prevention jig, 301 oven, 302
Substrate holder, 200 Microwave generator, 201
Waveguide, 202 low loss coefficient material, 203 isolator, 204 moisture monitor, 205 rotating metal reflector, 206 earth jig.

   ─────────────────────────────────────────────────── ─── Continued front page    F term (reference) 4K029 AA11 AA24 BD02 EA05 GA01                 4K030 CA07 CA12 DA09 JA06 KA39                       LA15

Claims (9)

[Claims] 1. A chamber for internally forming a film on a substrate, a holder for holding the substrate in the chamber, and a drying means for drying the substrate held by the holder. The film forming apparatus, wherein the drying means evaporates the water content of the substrate by using the microwave generated by the microwave generator. 2. The microwave generator according to claim 1, wherein the microwave generator is installed at a position facing a main surface of the substrate, and radiates the microwave substantially perpendicularly to the main surface of the substrate. Membrane device. 3. The microwave generator is provided outside the chamber, and the chamber is mainly composed of a low loss coefficient material having a lower loss coefficient in a portion through which the microwave is transmitted than in other portions. The film forming apparatus according to claim 1 or 2, which is provided. 4. When a metal wiring is provided on the main surface of the substrate, a grounding jig is further provided to prevent the substrate from being charged, and the metal wiring is provided by the grounding jig. The film forming apparatus according to any one of claims 1 to 3, which is configured to be able to fix the electric potential of. 5. The chamber further comprises a reflection plate for reflecting microwaves, the reflection plate being configured to reflect the microwaves introduced into the chamber to the substrate. The film forming apparatus according to any one of 1 to 4. 6. A moving mechanism for moving the holder is further provided, wherein the moving mechanism moves the holder so that the microwave generated from the microwave generator is uniformly applied to the main surface of the substrate. The film forming apparatus according to claim 1, wherein the film forming apparatus is movable. 7. A moisture sensor for detecting the amount of moisture generated from the substrate, and a display monitor for displaying the amount of moisture detected by the moisture sensor. The film forming apparatus according to any one of 1. 8. The film forming apparatus according to claim 1, further comprising a decompression device for decompressing the inside of the chamber. 9. When the metal wiring is provided on one main surface of the substrate, the holder is configured so that the microwave is introduced into the substrate from the other main surface side of the substrate. Configured to be able to hold the substrate,
The film forming apparatus according to claim 1.