JPH03191073A - Microwave plasma treating device - Google Patents

Abstract

PURPOSE:To prevent the thermal breakage of a microwave transmitting window and to simplify the structure of a microwave radiant section by closely attaching the surface of the window to a window holder to enable to uniformly cool the window. CONSTITUTION:The microwave plasma treating device is formed with a vacuum vessel 4, a microwave propagating and introducing means, a holder 108 for a sample 102 to be treated, etc., and the microwave is radiated from the microwave transmitting window 101 into a discharge space 107 vertically to the microwave propagating direction in the window 101, and the holder 117 for the window 101 is closely attached to the surface on the opposite side to the microwave radiant surface. The window 101 is provided with a conductor sheet 110 or conductor foil having a slit or slot 111 for radiating the microwave 109 on the microwave radiant surface. The microwave 109 is introduced into the discharge space 107 through the window 101 by the microwave propagating and introducing means.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a plasma processing apparatus. More specifically,
The present invention relates to a plasma processing apparatus suitable for etching, sputtering, cleaning or ashing of an object to be processed using plasma and for forming a film on a substrate.

[Prior Art] Plasma processing is a process in which a specific substance is turned into plasma to generate highly active radicals and ions, and these radicals and ions are brought into contact with an object to be processed to etch the object, form a deposited film, It refers to a processing method that performs treatments such as sputtering, cleaning, and ashing (ashing), and a plasma processing apparatus refers to an apparatus used to implement the plasma processing method.

Conventionally, such plasma processing apparatuses include a plasma processing chamber formed of a vacuum container having a raw material gas inlet and an exhaust port, and an electromagnetic wave that supplies energy to turn the raw material gas supplied to the plasma processing chamber into plasma. It consists of a supply device.

By the way, the plasma processing method relies on the strong activity of radicals and ions mentioned above, and by appropriately selecting the density of radicals and ions, the temperature of the object to be processed, etc., various treatments such as etching and deposited film formation can be performed. It is a feature of the plasma processing method that it can be performed as desired, and efficient generation of radicals and ions is important in this processing method.

Conventionally, as a medium that provides plasma energy, 1
High-frequency electromagnetic waves of about 3.56 MHz were used, but in recent years it has been found that high-density plasma can be efficiently generated by using microwaves of about 2.45 GHz. Treatment methods are attracting attention, and several devices have been proposed for this purpose.

For example, a microwave processing device proposed in Japanese Patent Application Laid-Open No. 61-252909 is shown in FIG.
802 is a sample to be processed; 803 is a waveguide; 804 is a plasma processing chamber; 805 is a microwave transmission window that maintains vacuum sealing;
806 is a vacuum exhaust port, and 806 is a processing gas inlet. Microwaves (usually 2,
45 GHz) is guided through a waveguide 803 onto a microwave transmission window 801 arranged parallel to the direction of microwave propagation, transmitted through the transmission window 801, and introduced into a plasma processing chamber 804.

On the other hand, in the plasma processing chamber 804, a sample 802 to be processed is placed parallel to the transmission window 801, and while vacuum is being drawn from the exhaust port 805, a reaction gas is introduced from the other gas inlet port 806 to reduce the degree of pressure reduction. 0. ITorr or number T
Make it about orr. Then, the inflowing reaction gas is turned into plasma by the microwave, and the plasma-excited gas reacts with the sample to be processed, thereby performing plasma etching.

Compared to vertical incidence processing equipment, horizontal incidence processing equipment has very little microwave reflection, excellent matching, and generates plasma efficiently, allowing the sample to be processed at high speed. be done.

[Problems to be Solved by the Invention] However, in the above conventional example, quartz or alumina are suitable materials for the microwave-transmitting window 801 that is vacuum-sealed and transmits microwaves. Since the window is heated to about 200℃ to 400℃, the thermal shock temperature of alumina is less than 200℃, so it is easily damaged, and even quartz has a large diameter and is thick (diameter of 200mm or more, thickness of 10mm). above) becomes vulnerable to thermal shock, and furthermore atmospheric pressure (~I Kg/cm2
), stress is constantly generated, and there is a drawback that serious accidents due to breakage are likely to occur.

The present invention has been made in view of the problems of the prior art described above, and provides a microwave plasma processing apparatus having a novel configuration related to a microwave transmission window.

[Means for Solving the Problems] The present invention provides a vacuum vessel having a discharge space and a means for supplying raw material gas to the discharge space, propagating microwaves from a microwave oscillator, and transmitting microwaves onto a microwave emitting surface. microwave propagation/introduction means for introducing microwaves into the discharge space through a microwave transmission window provided with a conductor plate or conductor foil having slits or slots for radiating microwaves; In a plasma processing apparatus comprising at least a sample holding table to be processed which is arranged in parallel with each other, the direction of radiation of the microwave emitted from the microwave transmission window into the discharge space is from the direction of microwave propagation within the transmission window. According to the present invention, there is provided a microwave plasma processing apparatus characterized by comprising a microwave transmission window holding means that is vertical and in close contact with the surface of the transmission window opposite to the microwave emission surface. It becomes possible to uniformly perform desired processing without fear of damage to the transmission window.

In the present invention, since the microwave radiation direction is perpendicular to the microwave propagation direction, the surface (back surface) opposite to the microwave radiation surface of the microwave transmission window (hereinafter referred to as transmission window)
There is no need to expose the window to the waveguide, and by holding the waist in close contact with the microwave transmission core holding means, the transmission window will not be damaged even if a load due to the pressure difference between the pressure in the discharge space and the atmospheric pressure acts on the transmission window. etc., and because it has the above structure, the back side of the transparent window is applied to the transparent window cooling means, and the holding member as a holding means that closely adheres to the meaning of the word is directly cooled with cooling water etc. This allows the transmission window to be efficiently and uniformly cooled, thereby stabilizing microwave radiation.

The apparatus of the present invention basically comprises a vacuum container having a discharge space and equipped with a raw material gas supply means, a microwave propagation/introduction means for emitting microwaves through a microwave transmission window, a holding table on which a sample to be processed is mounted, and a transmission window holding means that is held in close contact with the back surface of the transmission window, and may include various other means as long as it has the above configuration. For example, one that is equipped with a means for applying a magnetic field using an air-core coil in order to increase the efficiency of plasma generation generated by microwaves, one that is equipped with a means that can apply high-frequency power to a sample holding table to be processed in order to accelerate the generated ions, Similarly, those equipped with a means for applying high frequency power to a microwave transmitting window holder, etc., and those equipped with an electrode below the discharge space to increase ion energy, etc. Etching and ashing of the material to be processed by plasma generation. Alternatively, the present invention can be applied to all apparatuses capable of performing film formation processing and the like.

Further, the microwave emitting surface of the transmission window includes a conductor plate provided with slots or slits for uniformly emitting microwaves, and a protection plate that transmits microwaves to prevent metal sputtering from the conductor plate. etc. may be provided, and the plasma density distribution generated by microwave radiation can be made more uniform.

In the present invention, when the microwave radiation direction is perpendicular to the microwave propagation direction, microwaves are introduced from the side or central part of a transmission window having a predetermined thickness, and the microwave is transmitted in a direction perpendicular to the thickness direction. The transmission window is arranged so that the microwave is propagated and the microwave is radiated into the discharge space from a direction perpendicular to the propagation path. Materials constituting the transmission window that can be used in the present invention include quartz, alumina,
Any material that transmits microwaves can be used, such as aluminum nitride, silicon nitride, forsterite, boron nitride, machinable ceramics containing aluminum nitride as a main component and boron nitride, or magnesia.

The transmission window holding means that holds the transmission window is a means that can hold the transmission window on a surface other than the microwave emission surface and the microwave incidence surface of the transmission window and prevent damage due to pressure loads, etc. It only needs to be a conductor that is difficult for waves to pass through and that comes into close contact with the back surface of the transmission window, and it may be one that is integrated with the vacuum vessel body that constitutes the discharge space of the plasma processing equipment or that simply holds the transmission window. good.

The holding means preferably includes cooling means. In the present invention, the cooling means is a means for cooling the transmission window from the back side of the transmission window, and is capable of directly cooling the part of the transmission window holding means that comes into close contact with the waist (hereinafter referred to as the transmission window holding part). It is a means. As a means to directly cool the transparent window holding part that is in close contact with the back surface of the transparent window, it is possible to use a water circulation system, a cooling system using a refrigerant such as chlorofluorocarbon gas, etc., or a water cooling system is simple and efficient. The energy may be set according to the amount of heat generated by the transmission window generated by the plasma, so that the transmission window can be controlled within a predetermined temperature range.

Aluminum, copper, etc. can be used as the material constituting the transmission window holding means, but preferably it has properties such as high electrical conductivity and high thermal conductivity.

Further, the larger the area of the contact portion between the transmitting window holder and the rear surface of the transmitting window, the better the cooling efficiency, and it is preferable that the contact portion be in close contact with each other on all surfaces other than the microwave incidence side and the microwave emission side.

The degree of adhesion is preferably such that there is no gap at all, and another substance such as an adhesive material may be used as a means for adhesion.

[Example] The present invention will be further explained below with reference to Examples.

Example 1 FIG. 1 is a schematic diagram showing an embodiment of the apparatus that best represents the features of the present invention. In the figure, 101 is a transmission window that transmits microwaves and is sealed in vacuum, 102 is a sample to be processed,
103 is a waveguide, 104 is a plasma processing chamber, 105 is an evacuation system for evacuating the plasma processing chamber and maintaining a constant degree of vacuum, 106 is a gas inlet for introducing processing gas into the plasma processing chamber, 107 108 is a sample holding stage; 109 is a microwave propagation path; 110 is a conductor plate with slots; 111
112 is the slot for radiating microwaves, and 112 is the conductor plate 1.
113 is a cooling water inlet for cooling the transmission window 101, 114 is the same outlet, 115 is a cooling water channel for cooling the transmission window, and 116 is a discharge An air-core coil for generating a magnetic field in the space 107, 117 a holding part for holding the transmission window 101, and 118 a mode converter for converting a propagation mode suitable for slot excitation.

A case in which this apparatus is used to etch a Si wafer as a sample to be processed will be described below. In the configuration shown in Fig. 1, microwaves (usually 2.45G) generated by a magnetron (not shown) pass through an isolator (not shown) that absorbs reflected waves returning to the magnetron, and are connected to the load side. The mode converter 11 passes through an EH tuner or stub tuner (not shown) for matching.
Enter 8. Here, the microwave is converted into TEsoEs and supplied from the side of the transmission window 101 through the waveguide 103. The microwaves that have entered the transmission window 101 are sequentially radiated into the discharge space 107 along the propagation path 109 through the slot 111 shown in FIG. 2, which shows a front view and a bottom view as an example. The rate at which microwaves are radiated from the slot 111 is the slot length, β is λ. /(2Jε
), where λ increases. is the wavelength of the microwave in vacuum, and ε is the dielectric constant of the transmission window).Also, as the inclination angle θ of the slit with respect to the direction of incidence of the microwave approaches 90°, it increases, and at O, almost no microwave is emitted. Therefore, by adjusting these C1θ, the slot width W, the slot interval S, and the slot row interval d, it is possible to make the processing uniform. Note that the arrangement of the slots is not limited to that shown in FIG. 2, and may have any shape as long as the microwaves are uniformly radiated. Usually, when alumina is used as the microwave transmitting window material, It = 1 (1 to 23 mm, θ = 60'' to 90 @
, W=1~2mm, s=5~20mm, d=80
~150mm is sufficient.

Note that the same effect as using a conductor plate having slots can be obtained even if a conductor (copper, nickel, etc.) slot pattern is plated on the surface of the transmission window instead of the conductor plate. Further, even if the conductor plate is not used, the uniformity may be slightly inferior, but it can be carried out in the same manner for applications such as cleaning where uniformity is strictly required. This is because plasma is a conductor and exhibits the same effect as a conductor plate. Also, the protective plate is an insulating plate to prevent metal spatter from the conductor plate, but metal contamination will occur even if it is not used, but the present invention can be carried out.The material of the protective plate is the same as that of the transparent window. That's fine.

Further, the plasma density distribution by the slots can be made uniform by measuring the plasma density distribution using, for example, a Langmuir probe, and adjusting the shape, arrangement, etc. of the slots to obtain a desired distribution.

On the other hand, into the plasma processing chamber 104, a processing gas such as SFa for etching Si wafers is introduced from a gas inlet 106, and a vacuum exhaust system is used to introduce a processing gas of 10-2 to 10'''To.
The pressure is maintained at rr, and the microwave radiated into the discharge space from the slot 111 generates plasma in the discharge space 107, and the generated ions, SF,",F", radicals SF,',F" ( n is 1 to 6). The Si substrate is etched at a lower pressure (10-2 Torr or less, especially 3 X 10-' to 3 X 10-' Torr).
), in order to perform efficient discharge, a magnetic field (2.45Gt(
(in the case of Z, about 875 gauss) is applied, and high density plasma is generated even at low pressure using electron cyclotron resonance to perform etching. However, if a magnetic field is not required, an air-core coil is not required. Since the transmission window is in close contact with the holding part 117, the heat received from the plasma is absorbed by the transmission window 1.
The entire top surface of the 01 can be uniformly cooled by the cooling water flowing through the cooling water channel 115, thereby causing almost no temperature difference except in the thickness direction of the word. If cooling water is not used, the temperature of the transmission window is 200℃, depending on the material.
The temperature rises to about 400℃. In the case of an alumina transmission window with a diameter of 200 mm and a thickness of about 100 mm, the temperature of the transmission window can be suppressed to about 21 to 32 °C by supplying cooling water at about 20 °C at about 1 to 2 β/min. can.

Even in the thickness direction, in the case of alumina with a thickness of 20 mm or less, the temperature difference in the thickness direction is 10° C. or less, and there is no risk of thermal damage. Even when the transmission window is constructed using other materials, the temperature rise can be suppressed within a desired range by adjusting the temperature and supply amount of the cooling water. Also, instead of cooling water, other types of refrigerants (alcohol, fluorocarbon, etc.) can be used for cooling in the same way.

As a means for bringing the transmission window into close contact with the holding portion, adhesives such as silicone adhesive, conductive epoxy, allyl, or cyanoacrylate adhesive can be used.

When ashing novolac-based photoresist adhered to a Si wafer using this equipment, oxygen gas is introduced into the plasma processing chamber from the gas inlet and the pressure is set to 0.1 to I
The temperature is maintained at about Torr, and ashing is performed using oxygen plasma.

Next, when depositing a silicon nitride film using this apparatus, SiH4, Nt gas is introduced into the plasma processing chamber from the gas inlet, the pressure is set to 0.05 to 0,] Torr, plasma is generated, and the sample is placed on the sample holding table 108. deposited on a wafer mounted on a wafer.

Next, when cleaning a Si wafer with this device, introduce gas A from the gas inlet and adjust the pressure to lo-2~
Set to I Torr, microwave is supplied to generate plasma, and the argon ions in the plasma clean the dirt by sputtering effect.

Example 2 FIG. 3 shows a schematic diagram showing another embodiment of the device of the present invention.

In the figure, 210 is a conductor plate having a slot pattern as shown in FIG. 4, 218 is a coaxial converter, 219 is a coaxial tube, 217 is a transmission window holder equipped with a cooling mechanism, and 220 is a
Part of the taper for suppressing the reflected waves and propagating the microwave transmitted by the coaxial tube 219 in the radial direction through the transmission window.Those with the same symbols as those in Figure 1 have the same names as in Figure 1. Show things.

In this embodiment, similarly to the first embodiment, the generated microwaves are transmitted through the waveguide 103, and the coaxial converter 21
8 converts the microwave waveguide into a coaxial tube 219,
According to the microwave propagation path 109, the transmission Z101 is fed. The transmission window has a disk shape, and the propagation direction of the microwaves entering from the center is changed in the radial direction by the tapered portion 220, and the microwaves are gradually transmitted from the center through the slot 111 made in the conductor plate 210. Protective plate 112
While radiating into the discharge space 107 through the microwaves, the microwaves are directed toward the outer periphery and are completely radiated at the outermost slot row. As in the first embodiment, a processing gas is introduced into the plasma processing chamber, plasma is generated by microwaves emitted from the microwave transmission H1o1, and processing is performed in the same manner.

Adjustment of the microwave radiation distribution is performed in the same manner as in the first embodiment. In particular, in this embodiment, the transmission window 101 can be cooled by adhering the transmission window holding part 217 and the transmission window 101 with silicone adhesive, conductive epoxy, aryl, cyanoacrylate adhesive, etc. in an airtight manner. If this is done sufficiently, the atmospheric pressure applied to the transmission window 101 will be limited to the coaxial tube at the center, and the applied stress will be drastically reduced, making it difficult to break. Even in this embodiment, plasma is generated even without the conductor plate 210, and the structure is simple, so uniformity does not pose much of a problem, but it can be applied to cleaning, etc.

In addition, when alumina is used as the microwave transmission window material in this slot, 5 = 15 to 20 mm, w = 1
~2mm%d=5-10mm, θ=60-90, β=1
It is about 0 to 23 mm.

Embodiment 3 Next, as another aspect of the apparatus of the present invention, a device for applying high frequency power to the sample holder 108 is shown in FIG. 5. In FIG. The insulator 522 is a high frequency power source for supplying high frequency power to the sample holder, and 523 is a capacitor for DC floating the holder. Other parts with the same reference numerals as in FIGS. 1 and 4 indicate the same parts as in FIGS. 1 and 4.

To explain the operation of this device, plasma is generated in the discharge space 107 using microwaves in the same manner as in the embodiment described above. At the same time, when high-frequency power is applied to the sample holder, the sample holder is biased negatively because it is DC-floated by the capacitor 523, and ions are accelerated toward the sample 102 by the bias voltage, promoting processing by ions. be done. The energy of the ions is determined by the bias voltage, and the bias voltage is determined by the radio frequency power, so the energy of the ions can be controlled by the radio frequency power.

In the case of etching using this apparatus, for example, when etching SiO□ which requires a certain amount of ion energy, if the ion energy is controlled to 100 V or less, there will be no damage due to ion collisions and a high etching rate can be obtained. In addition, when depositing a SiO□ film, if the energy of the ions is controlled, the film can be deposited while simultaneously proceeding with appropriate etching due to ion bombardment, thereby eliminating unevenness on the film and forming a flat film.

The frequency of the high frequency used is 2 to 3 MHz or more, and the energy of ions can be controlled by a bias voltage, and an industrial high frequency of 13.56 J) Iz is usually used. On the other hand, at high frequencies below 2-3 M)lz, the energy of ions cannot be controlled by bias voltage, but since the ions are directly accelerated by the high-frequency electric field, the energy of ions can be controlled in the same way. 100 K) Iz to 500 KHz. In this case, the high frequency is not transmitted through the sample holder, but through the coaxial tube 219.
The voltage may be applied to the microwave transmission window holder 217 and the conductor plate 210, which face each other through the microwave. This is usually the slot spacing S
This is because the slot row interval d1 and the slot length β are 25 mm or less, and the slot width S is 2 mrrI or less, so it can be regarded as a flat plate in terms of high frequency (≦13.56M) Iz).

Example 4 Another embodiment is shown in FIG. In Fig. 6, 622 is a device for blocking high frequency waves from going to a coaxial converter with a tuner, and for example, it may have a chip structure commonly used in microwave circuits. This is an insulator for electrically insulating the transmission window holding part 217, and the same reference numerals as those in FIGS. 1, 3, and 5 refer to those in FIGS. To explain the operation of this zero-order device, which is the same as that shown in FIG. 5, the discharge chamber 10 is
Plasma is generated in 7, and a high frequency is applied to the transmission window holder 217 and the conductor plate 210 by the high frequency power supply 522, and the conductor plate 210 - the plasmer sample holder 108 (or the sample 1
02) A high frequency electric field is generated in between, and ions are accelerated by this electric field, allowing efficient etching, ashing, film formation, etc.

On the two sides to which high frequency waves are simultaneously applied as described above, the conductor plate 210 and the sample holder 108 act as opposing electrodes of the parallel plate type reaction device, so the high frequency electric field is simply applied to one side.
Unlike the case where there is no facing plate electrode, the mask-plasma-
A uniform high-frequency electric field is generated between the sample holders, allowing uniform etching, ashing, film formation, etc.

Embodiment 5 As the next embodiment, FIG. 7 shows an apparatus in which ions are extracted from the plasma generated in the discharge chamber 107 using an electrode group and irradiated onto the sample 102 for treatment.

In Fig. 7, 724 is an insulating inner container made of quartz, alumina, etc. that transmits microwaves and is made of the same material as the transparent window for insulating the plasma generated in the discharge chamber from the vacuum vessel, and 725, 726,727 are a large number of insulating inner containers that transmit microwaves. Ion extraction electrode with holes opened and optically aligned with each other, 728
729 is a DC power source for applying DC voltage to the extraction electrodes 725 and 726, 730 is a processing chamber, and 106' is a gas inlet provided in the processing chamber. Items with the same symbols as those shown in Figure 3 of the envoy refer to the same items as in Figure 4.

The operation of the apparatus shown in FIG. 7 will be explained. The microwave radiated from the slot 111 of the conductor plate 210 passes through the insulating inner container 724 and is supplied to the discharge chamber 107.

Next, a processing gas such as N2 gas is introduced from 106 when depositing a SiN film on a Si substrate as a sample.
More SiH4 gas is introduced. Plasma is generated in the discharge chamber 107 by the same action as in the embodiment shown in FIG. 3, and the plasma diffuses along the lines of magnetic force and reaches the ion extraction electrode 725. Ions in plasma (mainly N”
. stand 108
The sample 102 placed on the
Deposit an iN film. The extraction electrodes need not be limited to the three-layer structure shown in FIG. 7, and the same effect can be obtained with one or two electrodes.

The distribution of ions extracted from the plasma chamber 107 largely depends on the distribution of plasma in the plasma chamber, and an ion beam is obtained by generating uniform plasma by emitting microwaves from the slit conductor plate 210. be able to. With this ion beam, 10
By etching under the pressure of the -' Torr stage, the ion beam with the same direction reaches the sample, and etching proceeds in the direction of ion travel, making anisotropic etching possible.

In the devices shown in FIGS. 3 and 5 to 7 described above, the same effect can be obtained even if the microwave radiating portion is the same as the device shown in FIG. 1.

[Effects of the Invention] As explained above, by introducing microwaves into the transmission window from the side or the center and by bringing the surface of the microwave transmission window opposite to the discharge chamber side into close contact with the transmission window holder, the microwaves can be transmitted. The window can be easily and uniformly cooled, the transmission window can be prevented from being damaged by heat, and the structure of the microwave radiating section can be simplified.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram showing the configuration of a plasma processing apparatus in Example 1 of the present invention, FIG. 2 is a cross-sectional view and a plan view of a conductive plate with a rectangular slot used in the apparatus of FIG. 1, and FIG. is a schematic diagram showing the configuration of the device in Example 2 of the present invention, FIG. 4 is a plan view of the conductor plate used in the example of FIG. 3,
FIG. 5 is a schematic diagram showing the configuration of a device for applying high-frequency power to the sample holding table in Example 3, and FIG. 6 is a schematic diagram showing the configuration of a device for applying high-frequency power to the microwave transmission window in Example 4. FIG. 7 is a schematic diagram showing the configuration of an apparatus having an ion extraction electrode in Example 5. FIG. 8 is a sectional view of a conventional microwave plasma processing apparatus. 101: Microwave transmission window 102: Sample to be processed 103: Waveguide 104: Plasma processing chamber 105/evacuation system 106.106°: Gas inlet 1o7: Discharge space 108: Sample holding table 1o9: Electrical propagation path 210. 110: Conductor plate 111 Nislot 112: Protective plate 113: Cooling water inlet 114: Cooling water outlet 115/Cooling water channel 116: Air core coil 217.117/Holding section 118: Mode converter 218: Coaxial converter 219: Coaxial Pipe 22o: Tapered part 521: Insulator 522: High frequency power source 523: Capacitor 621: Insulator 622: High frequency blocking section 724: Insulating inner container 725, 726, 727: Electrode 728, 729 = DC power source 730: Processing chamber 801: Microwave transmission window 802: Sample to be processed 803: Waveguide 804: Plasma processing chamber 805: Vacuum exhaust port 806: Processing gas inlet

Claims (4)

[Claims] (1) A vacuum container having a discharge space and a means for supplying raw material gas to the discharge space, a slit or slot for propagating microwaves from a microwave oscillator and emitting microwaves on a microwave radiation surface. microwave propagation/introduction means for introducing microwaves into the discharge space through a microwave transmission window provided with a conductor plate or conductor foil, and a sample holding table to be processed disposed in the discharge space facing the microwave transmission window. In the plasma processing apparatus having at least A microwave plasma processing apparatus characterized by comprising a microwave transmission window holding means that is in close contact with a surface opposite to a radiation surface. (2) The microwave plasma processing according to claim (1), wherein the microwave transmission window holding means includes a cooling means for cooling a surface of the transmission window opposite to the microwave emission surface. Device. (3) The microwave transmitting window is made of quartz, alumina, aluminum nitride, silicon nitride, forsterite, boron nitride, matunable ceramics mainly composed of alumina nitride and containing boron nitride, or magnesia. The microwave plasma processing apparatus according to claim 1, characterized in that: (4) A silicone adhesive or a conductive epoxy, allyl, or cyanoacrylate adhesive is used as a means for bringing the microwave-transmitting window holding means into close contact with the surface of the microwave-transmitting window opposite to the microwave-emitting surface. The microwave plasma processing apparatus according to claim 1, characterized in that: