GB2548980B - Microwave plasma chemical vapour deposition reactors and methods for depositing polycrystalline diamond films - Google Patents
Microwave plasma chemical vapour deposition reactors and methods for depositing polycrystalline diamond films Download PDFInfo
- Publication number
- GB2548980B GB2548980B GB1703380.4A GB201703380A GB2548980B GB 2548980 B GB2548980 B GB 2548980B GB 201703380 A GB201703380 A GB 201703380A GB 2548980 B GB2548980 B GB 2548980B
- Authority
- GB
- United Kingdom
- Prior art keywords
- methods
- vapour deposition
- polycrystalline diamond
- microwave plasma
- chemical vapour
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662302883P | 2016-03-03 | 2016-03-03 | |
US15/444,772 US20170253963A1 (en) | 2016-03-03 | 2017-02-28 | Method of Efficient Coaxial Delivery of Microwaves into a Mode Stabilized Resonating Chamber for the Purpose of Deposition of Microwave Plasma CVD Polycrystalline Diamond Films |
Publications (3)
Publication Number | Publication Date |
---|---|
GB201703380D0 GB201703380D0 (en) | 2017-04-19 |
GB2548980A GB2548980A (en) | 2017-10-04 |
GB2548980B true GB2548980B (en) | 2020-08-19 |
Family
ID=58543903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1703380.4A Active GB2548980B (en) | 2016-03-03 | 2017-03-02 | Microwave plasma chemical vapour deposition reactors and methods for depositing polycrystalline diamond films |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2548980B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108624870B (en) * | 2018-07-05 | 2023-07-28 | 成都纽曼和瑞微波技术有限公司 | Tunable round-parabolic cavity type high-power microwave plasma chemical vapor deposition device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03191073A (en) * | 1989-12-21 | 1991-08-21 | Canon Inc | Microwave plasma treating device |
GB2486781A (en) * | 2010-12-23 | 2012-06-27 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB2497661A (en) * | 2011-12-16 | 2013-06-19 | Element Six Ltd | Large area optical quality synthetic polycrystalline diamond window |
-
2017
- 2017-03-02 GB GB1703380.4A patent/GB2548980B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03191073A (en) * | 1989-12-21 | 1991-08-21 | Canon Inc | Microwave plasma treating device |
GB2486781A (en) * | 2010-12-23 | 2012-06-27 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
GB2497661A (en) * | 2011-12-16 | 2013-06-19 | Element Six Ltd | Large area optical quality synthetic polycrystalline diamond window |
Also Published As
Publication number | Publication date |
---|---|
GB201703380D0 (en) | 2017-04-19 |
GB2548980A (en) | 2017-10-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3122918A4 (en) | Precursor and process design for photo-assisted metal atomic layer deposition (ald) and chemical vapor deposition (cvd) | |
SG10201700452RA (en) | High temperature atomic layer deposition of silicon-containing films | |
SG11201911413UA (en) | Methods of atomic layer deposition for selective film growth | |
GB2526639B (en) | Methods of fabricating diamond using microwave plasma activated chemical vapour deposition techniques and products obtained using said methods | |
SG10201600099VA (en) | Integrating atomic scale processes: ald (atomic layer deposition) and ale (atomic layer etch) | |
SG11201610304SA (en) | Design of susceptor in chemical vapor deposition reactor | |
EP3204962A4 (en) | Atomic layer deposition chamber with thermal lid | |
EP3183376A4 (en) | System and method based on low-pressure chemical vapor deposition for fabricating perovskite film | |
GB2506969B (en) | Thick polycrystalline synthetic diamond wafers for heat spreading applications and microwave plasma chemical vapour deposition synthesis techniques | |
EP3228161A4 (en) | Plasma source utilizing a macro-particle reduction coating and method of using a plasma source utilizing a macro-particle reduction coating for deposition of thin film coatings and modification of surfaces | |
EP3512978A4 (en) | Apparatus and methods for atomic layer deposition | |
SG11201406391YA (en) | Apparatus for growing diamonds by microwave plasma chemical vapour deposition process and substrate stage used therein | |
EP3307426A4 (en) | Continuous spatial atomic layer deposition process and apparatus for applying films on particles | |
EP3353339A4 (en) | Vapor deposition apparatus and techniques using high purity polymer derived silicon carbide | |
LU92445B1 (en) | Method for forming regular polymer thin films using atmospheric plasma deposition | |
SG10201701713TA (en) | Components such as edge rings including chemical vapor deposition (cvd) diamond coating with high purity sp3 bonds for plasma processing systems | |
EP3087585A4 (en) | Uniform chemical vapor deposition coating on a 3-dimensional array of uniformly shaped articles | |
SG10201607942YA (en) | High-throughput multichamber atomic layer deposition systems and methods | |
EP2989229A4 (en) | Methods for the photo-initiated chemical vapor deposition (picvd) of coatings and coatings produced by these methods | |
EP3338299A4 (en) | Process-specific wafer carrier correction to improve thermal uniformity in chemical vapor deposition systems and processes | |
EP3396703A4 (en) | Wafer supporting mechanism, chemical vapor deposition apparatus, and epitaxial wafer manufacturing method | |
EP3312137A4 (en) | Deposition of graphene layers by means of plasma-enhanced chemical vapour deposition | |
EP3288954A4 (en) | Organometallic compounds useful for chemical phase deposition | |
SG11202105622YA (en) | Method and apparatus for atomic layer deposition or chemical vapor deposition | |
GB201703485D0 (en) | Method of manufacture of free stand ng microwave plasma CVD polycrystalline diamond films with major dimensions on the order of one wavelength |