TWI383454B - Microwave introduction device and plasma processing device - Google Patents

Description

Microwave introduction device and plasma processing device

The present invention relates to a microwave introducing device and a plasma processing device used when a plasma generated by microwaves is applied to a semiconductor wafer or the like.

In recent years, with the increase in density and high definition of semiconductor products, in the process of semiconductor products, there has been a tendency to use a plasma processing apparatus in various processes such as film formation, etching, and ashing. In particular, even in the case of a high-density plasma which can stably form a high vacuum under a high vacuum of 0.1 mTorr (13.3 mPa) to several Torr (hundreds of Pa), there is a tendency to prefer to use a microwave plasma device. For example, Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. .

Hereinafter, a conventional microwave plasma processing apparatus will be briefly described with reference to FIGS. 6 to 8. Fig. 6 is a longitudinal sectional view schematically showing a configuration of a plasma processing apparatus, and Fig. 7 is an enlarged view showing a central portion of a planar antenna member and a slow wave member shown in Fig. 6, and Fig. 8 shows a seventh figure. A perspective view of the center portion of the slow wave member shown in the drawing.

As shown in Fig. 6, the plasma processing apparatus 2 includes a processing container 4 capable of vacuum drawing, a mounting table 6 for mounting the semiconductor wafer W in the processing container 4, and a mounting table. The disc-shaped top plate 8 which is disposed in the opposite direction and which can open the opening of the top of the processing container 4 in an airtight manner. The top plate 8 is made of a material that allows microwaves to be transmitted, such as alumina, aluminum nitride or quartz. A gas introduction means for introducing a specific processing gas into the processing container 4, for example, a gas nozzle 10, is provided on the side wall of the processing container 4. In the side wall of the processing container 4, an opening 12 for carrying in and out of the wafer W is further provided, and a gate valve G is provided in the opening 12. An exhaust port 14 is disposed at the bottom of the processing container 4, and a vacuum exhaust system is connected to the exhaust port 14, and the inside of the processing container 4 can be vacuum-extracted as described above.

On the upper side of the top plate 8, a microwave introducing device 16 for introducing microwaves for plasma formation into the processing container 4 is provided. The microwave introducing device 16 includes a planar antenna member 18 formed of a copper disk having a thickness of about several mm provided on the upper surface of the top plate 8, and a dielectric medium for shortening the wavelength of the microwave in the radial direction of the planar antenna member 18. The slow wave member 20 is constructed. In the planar antenna member 18, a plurality of microwave radiation slots 22 formed of elongated through holes are formed. In general, the slots 22 are configured to be concentric or spiral. Further, as shown in FIGS. 7 and 8, a frustoconical power supply portion 26 that protrudes upward from the center portion of the slow wave member 20 is provided. A through hole 28 is formed in the power supply unit 26.

The center conductor 24A of the coaxial waveguide 24 is connected to the planar antenna member 18 through the through hole 28. The outer conductor 24B of the coaxial waveguide 24 is connected to the central portion of the waveguide 30 covering the entire slow wave member 20. The specific frequency number generated by the microwave generator 32, for example, a microwave of 2.45 GHz, is converted into a specific vibration mode by the mode converter 34, and then introduced to the planar antenna member 18 and the slow wave member 20. The microwave system is radially radiated toward the radial direction of the planar antenna member 18. In the process, it is radiated from each of the slots 22 provided in the planar antenna member 18, and introduced into the processing container 4 through the top plate 8. The semiconductor wafer W is subjected to a specific plasma treatment such as etching or film formation by the plasma generated by the microwave in the processing space S in the processing container 4. On the upper surface of the waveguide 30, a cooler 36 for cooling the slow-wave member 20 which generates heat due to dielectric loss of the microwave is provided.

In such a microwave introducing device 16, in order to increase the transmission efficiency of microwaves as much as possible, it is known that reflected waves must be suppressed as much as possible. Therefore, even if microwaves are introduced from the lower end portion of the coaxial waveguide 24 into the power feeding portion 26 of the planar antenna member 18 and the slow wave member 20, the characteristic impedance changes there from the viewpoint of suppression of reflection of the microwave. It is desirable to change as slowly as possible. Therefore, the power supply portion 26 is formed into a frustoconical shape as described above. As a result, the characteristic impedance is, for example, 50 Ω in the coaxial waveguide 24, 15.9 Ω at the boundary portion between the power supply portion 26 and the coaxial waveguide 24, and follows the downstream side of the transmission direction, which is sequentially from 7.4 Ω. After that, it changes slowly with 1.5Ω.

Since the dielectric used as the material of the slow wave member 20 (specifically, quartz or ceramic such as aluminum nitride or aluminum oxide) is extremely high in hardness and brittle, it is extremely difficult to be processed under high processing precision. Processed. The taper surface processing (polishing processing) of the outer peripheral surface of the frustoconical power supply unit 26 having a height H0 of 3 to 10 mm is difficult to improve the processing precision, and the processing precision is relatively low at about ±0.5 mm at most. Degree. Therefore, as shown in Fig. 7, a relatively large gap 38 is often generated between the tapered side peripheral surface 26A of the power supply portion 26 and the inner surface of the waveguide case 30.

Due to this gap 38, the following problem arises, that is, the electric field of the microwave concentrates on the abnormal discharge caused by the gap 38, or the electric field distribution of the planar antenna member 18 loses the symmetry. In addition, since the gap 38 is unevenly generated, the characteristic impedance designed as designed values cannot be realized, and the problem of the reflectance of the microwave is also increased.

Further, when the gap 38 is generated, heat conduction from the power supply portion 26 to the waveguide box 30 (cooled by the cooler 36) is lowered, and the cooling efficiency in the vicinity of the power supply portion 26 may be lowered.

The present invention has been made in view of the above problems, and has been made in order to solve such problems more effectively. An object of the present invention is to improve the dimensional precision during processing by simplifying the shape of the power supply portion of the slow wave member, and thereby suppress the occurrence of a gap in the power supply portion which is a cause of various problems.

In order to achieve the above object, the present invention provides a microwave introducing device comprising: a microwave generator for generating microwaves; and a planar antenna member formed with a slot for microwave radiation; and having a center conductor and an outer conductor, and the microwave a microwave generated by the generator is transmitted to the coaxial waveguide of the planar antenna member; and a flat wave member provided to overlap the planar antenna member, and having a first surface facing the planar antenna member, and The second surface facing the first surface is formed on the second surface, and a slow wave member is formed on the second surface, and the power supply portion is configured by the protrusion protruding from the center portion and supplied from the coaxial waveguide. The center conduction system is connected to a central portion of the planar antenna member through a through hole formed in the power supply portion, and the power supply portion has a side wall perpendicular to a second surface of the slow wave member.

The slow wave member described above may be formed of a dielectric.

Preferably, the height of the power supply portion based on the second surface of the slow wave member is in a range of 6.5 to 13.0 mm. When the slow wave member is made of alumina, the height of the power supply portion based on the second surface of the slow wave member is preferably in the range of 6.5 to 8.5 mm. Further, when the slow wave member is formed of quartz, the height of the power supply portion based on the second surface of the slow wave member is preferably in the range of 11 to 13 mm.

The slow wave member can also be covered by a waveguide box made of a conductive material. Further, in the above-described waveguide box, a cooling means for cooling the slow wave member may be provided.

The frequency of the above microwaves can be set to 2.45 GHz or 8.35 GHz.

Further, according to the present invention, there is provided a plasma processing apparatus comprising: a processing container having an opening at a top portion and capable of vacuum drawing inside; and a load disposed in the processing container for placing the object to be processed And a top plate formed by the dielectric capable of transmitting microwaves; and a gas introduction means for introducing a desired processing gas into the processing container; and introducing microwaves into the above The microwave introduction device described in claim 1 is provided in the processing container and disposed above the top plate. The top plate and the slow wave member described above may be formed of the same material.

Hereinafter, a mode of an embodiment of the microwave introducing device and the plasma processing device of the present invention will be described with reference to additional drawings. 1 is a view showing an example of a plasma processing apparatus including a microwave introducing device according to the present invention, and FIG. 2 is an enlarged view showing a central portion of a planar antenna member and a slow wave member of the microwave introducing device, and FIG. A perspective view showing the center portion of the slow wave member.

The plasma processing apparatus 42 includes a cylindrical processing container 44 in which the side wall and the bottom wall are made of a conductor such as aluminum. The interior of the processing vessel 44 is partitioned into a cylindrical closed processing space S. Processing vessel 44 is grounded.

In the processing container 44, a substrate to be processed is placed thereon, for example, a disk-shaped mounting table 46 of a semiconductor wafer W. The mounting table 46 is fixed to the bottom of the container via a support 48 made of aluminum. A carry-out port 50 for carrying out and loading the wafer W into the inside of the processing container 44 is provided on the side wall of the processing container 44. The carry-out port 50 is provided with a gate valve 52 that can be sealed in an airtight manner.

In the processing container 44, a gas introduction means 54 for introducing a necessary processing gas into the processing container 44 is provided. In the present example, the gas introduction means 54 has a gas nozzle 54A penetrating the side wall of the processing container 44, and supplies a necessary processing gas while controlling the flow rate as necessary. Further, a plurality of gas nozzles 54A may be provided to introduce different types of gases into the processing container 44 individually. Further, the gas introduction means 54 may have a so-called shower head provided in an upper portion of the processing container 44 instead of the above.

An exhaust port 56 is provided on the bottom wall of the processing vessel 44. In the exhaust port 56, an exhaust path 62 for sequentially connecting the pressure control valve 58 and the vacuum pump 60 is connected, and the inside of the processing container 44 can be evacuated to a specific pressure as necessary.

A plurality of lift pins 64 for lifting and lowering the wafer W at the time of loading and unloading the wafer W are provided below the mounting table 46, for example, three lift pins 64 (only two are shown in Fig. 1). The lifting rod 68 penetrates the bottom wall of the processing container 44, and the lifting rod 68 is surrounded by the bellows 66 that is retractable in order to ensure airtightness in the processing container 44. The lifter 68 lifts the lift pins 64. On the mounting table 46, a pin through hole 70 for inserting the lift pin 64 is formed. The mounting table 46 is formed of a heat resistant material such as ceramics such as alumina. A heating means 72 is provided in the mounting table 46. The heating means 72 can be constituted by an electric resistance heater which is embedded in the thin plate shape of the entire area of the mounting table 46. The heating means 72 is connected to the heater power source 76 through the wiring 74 in the support 48.

A thin plate-shaped electrostatic chuck 80 is provided on the upper surface side of the mounting table 46. The electrostatic chuck 80 may be configured to have a conductor line 78 arranged in a mesh shape inside. The electrostatic chuck 80 can be adsorbed by the wafer W placed on the mounting table 46, that is, the electrostatic chuck 80 by electrostatic attraction. The conductor line 78 of the electrostatic chuck 80 is connected to the DC power source 84 for applying a voltage for electrostatic adsorption to the conductor line 78 through the wiring 82. Further, in order to apply a specific frequency, for example, a bias high frequency power of 13.56 MHz to the conductor wire 78 of the electrostatic chuck 80 when necessary, a bias high frequency power source 86 is further connected to the wiring 82. Further, the high frequency power supply 86 for biasing may be omitted depending on the type of processing performed by the plasma processing apparatus.

The processing container 44 is formed with an opening at the upper end thereof, and the opening is sealed in an airtight manner by the top plate 88 via a sealing member 90 such as an O-ring. The top plate 88 is made of a material that is transparent to microwaves, specifically, quartz or a dielectric such as alumina (Al ₂ O ₃ ) or aluminum nitride (AlN). The thickness of the top plate 88, for example, can be formed to be about 20 mm under consideration of pressure resistance.

On the upper surface side of the top plate 88, the microwave introduction device 92 of the present invention is provided. The microwave introducing device 92 has a disk-shaped planar antenna member 94 for introducing microwaves into the processing container 44. The underside of the planar antenna member 94 is in contact with the upper surface of the top plate 88. The planar antenna member 94 is made of a conductive material, and is preferably made of copper or aluminum after silver plating. When the plasma processing apparatus is configured to process a wafer having a size of 300 mm, the planar antenna member 94 can be formed to have a diameter of about 400 to 500 mm and a thickness of 1 to several mm. In the planar antenna member 94, a plurality of microwave radiation slots 96 formed of elongated through holes are formed. The slots 96 can be configured to be concentric, scroll or radial. Slots 96 may also be uniformly distributed throughout the planar antenna member 94. This planar antenna member 94 is a so-called antenna called RLSA (Radial Line Slot Antenna), and can form a plasma of low electron energy in the processing container 44 at a high density.

The planar antenna member 94 is provided with a slow-wave member 98 having a thin circular plate shape as a whole. The lower surface of the slow wave member 98, that is, the first surface, is in contact with the planar antenna member 94. The slow wave member 98 is formed of a high dielectric material for shortening the wavelength of the microwave, and may be formed of, for example, quartz or ceramic such as alumina or aluminum nitride. The slow wave member 98 covers substantially the entire surface of the planar antenna member 94. The power supply unit 100 (see FIG. 3) in the form of a columnar protrusion that protrudes upward from the upper surface of the slow wave member 98, that is, the central portion of the second surface is formed. The power supply unit 100 has a height H1 based on the upper surface of the slow wave member 98. The surface of the side wall 100A of the power supply unit 100 is not a tapered surface that is inclined to the upper surface of the slow wave member as in the conventional power supply unit (see FIG. 8), but is perpendicular to the slow wave as shown in FIG. The top of the component.

Therefore, since the shape of the side wall 100A can be easily formed by mechanical processing such as polishing, the side wall 100A can be processed with high processing precision. The processing precision of the conventional power supply unit (the figure 26 in Fig. 8) having the outer peripheral surface of the tapered surface is about ±0.5 mm, but according to the present invention, it is confirmed that it is perpendicular to the upper surface of the slow wave member 98. The processing precision of the power supply unit 100 having the side wall 100A is about ±0.1 mm. The height H1 of the power supply unit 100 differs depending on the material constituting the slow wave member 98. However, in order to suppress the reflectance of the microwave, it can be set in the range of 6.5 to 13.0 mm. In the power supply unit 100, a through hole 102 that penetrates the center in the vertical direction is formed. The lower portion of the through hole 102 is increased in diameter as it is closer to the lower end. The material of the slow wave member 98 takes into consideration the effect of shortening the wavelength of the microwave, and the same material as the top plate 88 can be used.

A thin cylindrical waveguide box 104 composed of a conductor covers all of the upper surface and the side surface of the slow wave member 98. The planar antenna member 94 forms the bottom plate of the waveguide box 104. A cooling jacket 106 as a cooling means for cooling the cold coal is provided on the upper surface of the waveguide box 104.

The waveguide box 104 and the peripheral portion of the planar antenna member 94 are both electrically connected to the processing container 44. A coaxial waveguide 108 is connected to the power supply unit 100. The coaxial waveguide 108 is composed of a center conductor 108A and an outer conductor 108B having a circular cross section disposed at a predetermined interval therebetween. The outer conductor 108B is connected to the central portion of the upper portion of the waveguide case 104, and the center conductor 108A is connected to the central portion of the planar antenna member 94 through the through hole 102 at the center of the slow wave member 98.

The side wall 100A of the power supply unit 100 in the form of a columnar projection that has been processed under high machining precision is in close contact with the inner wall surface of the outer conductor 108B. The coaxial waveguide 108 is connected to the 2.45 GHz microwave generator 114 via the mode converter 110 and the rectangular waveguide 112 having a matching device (not shown) in the middle, and transmits the microwave to the planar antenna. Member 94 and slow wave member 98. The frequency of the microwave is not limited to 2.45 GHz, and may be other frequency numbers, for example, 8.35 GHz.

The operation of the entire plasma processing apparatus 42 is controlled by a control means 116 composed of a microcomputer or the like. The program of the computer that performs this operation is stored in a memory medium 118 such as a floppy disk, a CD (Compact Disc), or a flash memory. By the command from the control means 116, various processing gas supply and flow rate control, microwave and high frequency supply and power control, and process temperature and process pressure control are performed.

Next, an example of a processing method executed by the plasma processing apparatus 42 will be described. First, the gate valve 52 is opened, and the semiconductor wafer W is stored in the processing container 44 through the carry-out port 50 by the transfer arm (not shown), and the lift pin 64 is moved up and down to mount the wafer W on the mounting table. The mounting surface of 46 is then adsorbed by the electrostatic chuck 80. This wafer W can be maintained at a particular process temperature by heating means 72 as necessary. Among the gas sources not shown in the drawing, while controlling the flow rate, a specific processing gas is supplied into the processing container 44 through the gas nozzle 54A of the gas introducing means 54, and the pressure control valve 58 is controlled to maintain the inside of the processing container 44. Specific process pressure.

At the same time, by the microwave generator 114 driving the microwave introducing device 92, the microwave generated by the microwave generator 114 is transmitted from the power supply unit 100 to the planar antenna member 94 and slowly through the rectangular waveguide 112 and the coaxial waveguide 108. Wave member 98. The microwave after the wavelength is shortened by the slow wave member 98 is transmitted to the processing space S by the transmission of the top plate 88, whereby plasma is generated in the processing space S, and the plasma is used for specific processing.

Here, the case where the microwave is transmitted from the lower end portion of the coaxial waveguide 108 will be described in detail. The microwaves transmitted through the coaxial waveguide 108 are transmitted through the power supply unit 100 provided at the central portion of the slow wave member 98, and are radially transmitted toward the slow wave member 98 and the peripheral portion of the planar antenna member 94. In this process, the microwave system is radiated from the respective slots 96 toward the processing space S below, and is introduced into the processing container 44.

As described above, the power supply unit 100 having a novel shape according to the present invention can be processed at a high processing precision, and can be embedded in the lower end portion of the outer conductor 108B of the coaxial waveguide 108 without generating a gap. . Therefore, the problem of abnormal discharge occurring between the power supply portion 100 and the outer conductor 108B due to the gap can be prevented, and the problem that the electric field distribution of the planar antenna member 94 loses symmetry can be prevented.

Further, since the gap is not generated, the characteristic impedance designed as the design value can be realized, whereby the reflection of the microwave in the power supply portion 100 and its vicinity can be suppressed. Further, when the cooling means 106 is provided in the coaxial waveguide 108, since the power supply unit 100 and the inner wall surface of the coaxial waveguide 108 can be closely contacted, the thermal conductivity between the two members can be improved, and the power supply unit 100 can be improved. Cooling efficiency.

However, if the power supply unit 100 is formed in a cylindrical shape, the power supply unit 100 may be configured to have a frustoconical shape (see FIGS. 7 and 8), which may cause a sharp change in the characteristic impedance and increase the microwave. Reflectivity. However, this problem can be solved by optimizing the height H1 of the power supply unit 100.

The optimum height H1 is in the range of 6.5 to 8.5 mm when the material of the slow wave member 98 and the power supply unit 100 is a relative dielectric constant of about 9.8, and is about a quartz having a relative dielectric constant of about 3.8. , is located in the range of 11~13mm. By optimizing the height H1 of the power supply unit 100 in this manner, it is possible to suppress an increase in the reflectance of the microwave and suppress it to 5% or less.

<Change in characteristic impedance and reflectance>

Next, a discussion result of the optimization of the height H1 of the power supply unit 100 will be described with reference to FIGS. 4 and 5. Fig. 4 is a view showing a model of a central portion of a slow wave member which is a basis for calculation of a characteristic impedance, and Fig. 5 is a view showing a relationship between a height of a power supply portion of a slow wave member and a reflectance of microwave. In the present model, the frequency of the microwave is set to 2.45 GHz, but the number of frequencies is not limited to this.

Fig. 4(A) shows a model around the power supply unit of the conventional slow wave member, and Fig. 4(B) shows a model around the power supply unit of the slow wave member of the present invention.

This is calculated based on the following premise.

Material of slow wave member: alumina (relative dielectric constant 9.8) thickness of slow wave member d: radius of through hole of 4 mm power supply part d1: 8.45 mm radius of power supply part d2: characteristic impedance of 19.4 mm coaxial waveguide : Height of the 50 Ω power supply unit H0 (prior art): Height H1 of the 6 mm power supply unit (invention): 8 mm

The characteristic impedance is obtained by the following equation.

Z=V/I=60d/(r ε)r: distance from the center of the slow wave member ε: relative dielectric constant

In the conventional slow wave member shown in Fig. 4(A), the characteristic impedance is 15.9 Ω at the boundary between the coaxial waveguide and the power supply portion, and is 10 Ω in the oblique cross section of the terminal point including the outer periphery of the power supply portion. It is 3.95 Ω on the lower section above the termination point including the periphery of the power supply section. At this time, the reflectance of the microwave was 3.6%, which was confirmed to be significantly lower than 4.5% of the prior art.

Here, in the model of the slow wave member of the present invention shown in FIG. 4(B), the dependence of the reflectance of the microwave on the height H1 of the power supply portion will be discussed. Figure 5 (A) shows the results. As shown in Fig. 5(A), in the range where the height H1 of the power supply portion is 6 to 9 mm, the reflection of the microwave exhibits a downward concave curve, and when the height H1 is 8 mm, the lowest reflectance is exhibited. About 3.5. Here, when the allowable limit (upper limit) of the reflectance is 5%, it is confirmed that the reflectance can be controlled within the allowable limit by setting the height H1 to a range of 6.5 to 8.5 mm. Further, when the allowable limit of the reflectance was 4%, it was confirmed that the reflectance was controlled within the above tolerance by setting the height H1 to be in the range of 7.0 to 8.1 mm.

Next, the plasma processing apparatus using the slow-wave member of the power supply unit 100 having the height H1 of 8 mm according to the shape of the present invention was actually operated to confirm the state of the generated plasma. That is, it was confirmed by visual observation that even if the microwave power was changed within the range of 1000 to 3,500 watts and the pressure in the processing container was changed within the range of 50 to 200 mTorr, the plasma could be stably formed.

The material of the slow wave member was changed from alumina to quartz, and the same discussion as above was carried out. Fig. 5(B) shows the relationship between the height H1 of the power supply portion and the reflectance at this time. Here, the thickness d of the slow wave member composed of quartz is 7 mm, and the relative dielectric constant ε of quartz is 3.8. As can be seen from Fig. 5(B), in order to make the reflectance of the microwave reach 5% or less, the height H1 may be set to be in the range of 11.0 to 13.0 mm. In addition, the relative dielectric constant of aluminum nitride (AlN) is 8.0, which is substantially the same as that of the aluminum oxide. Therefore, when the material of the slow-wave member is aluminum nitride, the above-mentioned size obtained for the para-alumina can also be obtained. Apply it.

The configuration of the plasma processing apparatus described above is merely an example and is not limited thereto. Further, the material and relative dielectric constant of the slow wave member 98 are only shown as an example and are not limited thereto. In particular, it is preferable that the height H1 of the power supply unit 100 is optimized in accordance with the relative dielectric constant of the material to be used. Further, the object to be processed which is processed by the plasma processing apparatus is not limited to the semiconductor wafer, and may be another type of object to be processed such as a glass substrate, an LCD substrate, or a ceramic substrate.

2, 42. . . Plasma processing device

4, 44. . . Processing container

6, 46. . . Mounting table

8, 88. . . roof

10, 54. . . Gas introduction means

12. . . Opening

14, 56. . . exhaust vent

16, 92. . . Microwave introduction device

18, 94. . . Planar antenna member

20, 98. . . Slow wave component

22, 96. . . Slot

24,108. . . Coaxial waveguide

24A, 108A. . . Center conductor

24B, 108B. . . Outer conductor

26. . . Power supply department

26A. . . Lateral surface

28, 102. . . Through hole

30, 104. . . Guide box

32, 114. . . Microwave generator

34, 110. . . Mode converter

36. . . Cooler

38. . . gap

48. . . pillar

50. . . Move out of the entrance

54A. . . Gas nozzle

58. . . Pressure control valve

60. . . Vacuum pump

62. . . Exhaust path

64. . . Lift pin

66. . . Bellows

68. . . Lifting rod

70. . . Bolt through hole

72. . . Heating means

74, 82. . . Wiring

76. . . Heater power supply

78. . . Conductor wire

80. . . Electrostatic adsorption disk

84. . . DC power supply

86. . . Bias high frequency power supply

90. . . Sealing member

100. . . Power supply department

100A. . . Side wall

106. . . Cooling jacket

112. . . Rectangular waveguide

116. . . Control means

118. . . Memory media

G, 52. . . gate

S. . . Processing space

W. . . Semiconductor wafer

Fig. 1 is a longitudinal cross-sectional view schematically showing a configuration of a plasma processing apparatus equipped with a microwave introducing device according to an embodiment of the present invention.

Fig. 2 is an enlarged view showing a central portion of a planar antenna member and a slow wave member of the microwave introducing device shown in Fig. 1.

Fig. 3 is a perspective view showing a central portion of the slow wave member shown in Fig. 2.

Fig. 4 is a model diagram showing the dimensions of the respective portions of the central portion of the slow wave member used in obtaining the characteristic impedance.

Fig. 5 is a view showing the relationship between the height of the power supply portion of the slow wave member and the reflectance of the microwave.

Fig. 6 is a longitudinal sectional view schematically showing the configuration of a conventional plasma processing apparatus.

Fig. 7 is an enlarged view showing a central portion of a planar antenna member and a slow wave member of the plasma processing apparatus of Fig. 6.

Fig. 8 is a perspective view showing a central portion of the slow wave member shown in Fig. 7.

42. . . Plasma processing device

44. . . Processing container

46. . . Mounting table

48. . . pillar

50. . . Move out of the entrance

52. . . gate

54. . . Gas introduction means

54A. . . Gas nozzle

56. . . exhaust vent

58. . . Pressure control valve

60. . . Vacuum pump

62. . . Exhaust path

64. . . Lift pin

66. . . Bellows

68. . . Lifting rod

70. . . Bolt through hole

72. . . Heating means

74. . . Wiring

76. . . Heater power supply

78. . . Conductor wire

80. . . Electrostatic adsorption disk

82. . . Wiring

84. . . DC power supply

86. . . Bias high frequency power supply

88. . . roof

90. . . Sealing member

92. . . Microwave introduction device

94. . . Planar antenna member

96. . . Slot

98. . . Slow wave component

100. . . Power supply department

104. . . Guide box

106. . . Cooling jacket

108. . . Coaxial waveguide

108A. . . Center conductor

108B. . . Outer conductor

110. . . Mode converter

112. . . Rectangular waveguide

114. . . Microwave generator

116. . . Control means

118. . . Memory media

S. . . Processing space

W. . . Semiconductor wafer

Claims (9)

A microwave introduction device comprising: a microwave generator for generating microwaves; and a planar antenna member formed with a slot for microwave radiation; and a center conductor and an outer conductor, and the microwave generator generates a coaxial waveguide that transmits the microwave to the planar antenna member; and a flat wave member that is provided to overlap the planar antenna member, and has a first surface facing the planar antenna member, and an orientation and the first a second surface of the opposite direction, wherein the second surface is formed with a slow wave member composed of a protrusion protruding from the center portion and supplied from the coaxial waveguide; the center conduction system a through hole formed in the power supply portion is connected to a center portion of the planar antenna member; the power supply portion has a side wall perpendicular to a second surface of the slow wave member; and the second surface of the slow wave member is The height of the above-mentioned power supply unit of the reference is in the range of 6.5 to 13.0 mm. The microwave introducing device according to claim 1, wherein the slow wave member is formed of a dielectric. The microwave introducing device according to claim 1, wherein the slow wave member is made of alumina, and the height of the power feeding portion of the slow wave member based on the second surface is located. Within the range of 6.5~8.5mm. The microwave introducing device according to claim 1, wherein the slow wave member is made of quartz, and the height of the power feeding portion of the slow wave member based on the second surface is 11 to 13 mm. Within the scope. The microwave introducing device according to claim 1, wherein the slow wave member is covered with a waveguide box made of a conductive material. The microwave introducing device according to claim 5, wherein the waveguide box is provided with a cooling means for cooling the slow wave member. The microwave introducing device according to claim 1, wherein the frequency of the microwave is 2.45 GHz or 8.35 GHz. A plasma processing apparatus comprising: a processing container having an opening at a top portion and capable of vacuum drawing inside; and a mounting table disposed in the processing container for placing the object to be processed; a top plate formed of the dielectric capable of transmitting microwaves in a gastight manner; and a gas introduction means for introducing a desired processing gas into the processing container; and introducing microwaves into the processing container The microwave introduction device described in claim 1 is provided above the top plate. The plasma processing apparatus according to claim 8, wherein the top plate and the slow wave member are formed of the same material.