200908817 九、發明說明 【發明所屬之技術領域】 本發明是有關一種令藉由微波產 晶圓等施行處理之際所使用的電漿處 板構件。 【先前技術】 近年隨著半導體製品的高密度化 體製品之製造製程中，爲了成膜、鈾 . 理，使用電漿處理裝置的情形具多。 1 3 . 3 mP a )〜數Torr (數百Pa)左右 狀態也很穩定，能使電漿直立，而有 密度電漿之微波電漿處理裝置的傾向 係揭示於日本專利文獻1〜5的（專手I 3 - 1 9 1 073號公報、專利文獻2 :特開 、專利文獻3 :特開平9- 1 8 1 052號公 開2003 -3 3 2326號公報、專利文獻： 號公報）。 在此，邊參照第8圖及第9圖、 波的一般電槳處理裝置之一例。第8 電漿處理裝置的槪略構造圖，第9圖 放大剖面圖。 如第8圖所示，在習知的電漿處 空吸引的處理容器4內，設有載置4 生的電漿，對半導體 理裝置及使用彼之頂 及高微細化，在半導 刻、灰化等之各種處 特別是在O.lmTorr ( 之壓力較低的高真空 使用利用微波產生高 。此種電漿處理裝置 J文獻1 :特開平 平5-343334號公報 報、專利文獻4 :特 ;:特開 2005- 1 0093 1 邊槪略的說明利用微 圖是表不習知一般的 是表示其頂板構件的 理裝置2中，在可真 :導體晶圓W的載置 -5- 200908817 台6。在面對該載置台6的頂部，氣密的設有透過微波的 圓板狀的頂板構件8。頂板構件8是以鋁或氮化錫、石英 等的介電質板所形成。而且，在處理容器4的側壁’設有 作爲用以將既定的氣體導入到處理容器4內的氣體導入手 段，例如氣體噴嘴1 0。又’在處理容器4的側壁’設有 搬出/搬入晶圓W用的開口部1 2。在該開口部1 2設有氣 密的開閉彼之閘閥G。又，在處理容器4的底部設有排氣 口 14。在該排氣口 14連接著圖未示的真空排氣系統’就 能將處理容器4內吸引成真空。 而且，在頂板構件8的上側，設有將電漿形成用的微 波導入到處理容器4內的微波導入手段1 6。具體上，微 波導入手段1 6具有：設置在頂板構件8之上面厚度數 mm左右的圓板狀平面天線構件1 8、和用以縮短該平面天 線構件1 8之半徑方向的微波波長之例如以介電質所形成 的遲波構件20。平面天線構件1 8例如以銅板所形成。而 且，在平面天線構件1 8形成有多數的例如以長槽狀貫通 孔所形成的微波放射用的狹縫22。該狹縫22 —般是同心 圓狀配置，或渦輪狀配置。 而且，同軸導波管24的中心導體24A，是連接在平 面天線構件1 8，且同軸導波管24A的外側導體24b是連 接於覆蓋遲波構件20之整體的導波箱25的中央部。而且 ，藉由微波產生器26產生之例如2.45GHz的微波，會利 用模式變換器28變換成既定的振動模式，然後導向平面 天線構件1 8或遲波構件20。而且，微波會邊朝天線構件 -6- 200908817 1 8的半徑方向放射狀的傳遞、邊從設置在平面天線構件 18的各狹縫22放射，微波會穿透頂板構件8，導向下方 的處理容器4內。電漿會因該微波直立在處理容器4的處 理空間S，對半導體晶圓W施行蝕刻或成膜等之既定的電 漿處理。又，在導波箱25的上面設有用來冷卻因微波之 介質耗損被加熱的遲波構件20的冷卻器30。 雖然構成頂板構件8的介電質板之板厚，也有均勻形 成整個面的情形，但爲了達到處理空間S之面內方向的電 槳密度之均勻化，得要各種辦法完成。例如：如第9圖所 示（參照專利文獻5 )，得以在頂板構件8之中心部的大 氣部（上面側），形成取消該部分的微波，用以避免電場 集中的凹部3 2。又，分別在頂板構件8之下面側的中心 部、中周部及外周部，設有斷面梯形或斷面三角形的突起 部3 4 a、3 4 b、3 4 c，形成對微波的共振區域。此種情形下 ’得以產生由低的壓力到高的壓力形成穩定的電漿。 可是’作爲構成半導體裝置之例如層間絕緣膜等的材 料’以動作速度更進一步提昇等爲目的，傾向使用例如以 SiOC膜、SiOCH膜、CF膜等爲代表的低介電常數材料（ 所謂的Low-k材料）。而且，爲了讓以低介電常數材料的 層間絕緣膜等之電性質更良好，希望在可得到合理性之生 產量的範圍’儘可能讓成膜處理時壓力形成低壓例如 5 0m T 〇 r r ( 6.7 P a )以下。 如周知’處理容器4內的壓力過低的話，即使加大投 入的微波電力，電漿也不會點燃。因此在以往，電漿點燃 200908817 時一旦將處理容器4內的壓力設定的稍微高標，在電漿點 燃之後，降低處理容器4內的壓力，進行成膜處理。再者 ，電漿一旦點燃的話’即使其後處理容器4內的壓力降的 過低，還是具有充分維持穩定的特性。 但是如上述’電漿點燃時’即使暫時將處理容器4內 的壓力設定昇高電漿能點燃的話’因爲於點燃時正要流入 成膜用氣體，所以雖是短時間但卻是在電漿壓力很高的狀 態下進行低介電常數材料的成膜。而且，此時堆積的薄膜 ，會使絕緣膜整體的電性質下降。 一方面，爲了改善電漿的點燃性，亦考慮在頂板構件 之下面中央部向下方形成大的突起部，於此產生電場集中 。但在此情形下，電漿點燃之後，也會在該部分持續性的 產生電場集中，平面方向的電槳密度之均勻性大爲崩解。 【發明內容】 本發明是著眼於如上的問題，爲有效解決問題所發明 的。本發明之目的在於提供一種即使處理容器內的壓力依 舊很低，亦使用不讓電漿之點燃性下降的頂板構件及使用 彼之電發處理裝置。 本發明是一種頂板構件’爲藉由因微波而產生的電漿 對被處理體施行處理，以設置在可真空吸引的處理容器的 頂部，具有透過前述微波之功能的介電質板所形成的頂板 構件，其特徵爲：在該頂板構件的前述處理容器內側，設 有於電漿點燃時供進行電場集中的點燃用凹部。 -8 - 200908817 藉由該特徵，即使依舊降低處理容器內的壓力’還是 能維持電漿的點燃性。因而’在處理容器內的壓力爲較高 的狀態下，可避免完成成膜，還可避免形成的低介電常數 材料的絕緣膜等的電性質下降。 例如前述點燃用凹部具有前述微波的前述介電質板中 的波長爲λ ，2· A/8SDS4· λ/8之範圍內的直徑D。 又，例如前述點燃用凹部具有前述微波的前述介電質 板中的波長爲λ ，2· λ/8$Η$4. λ/8之範圍內的深度 Η。 又，例如前述點燃用凹部之內側的側面，設定在對垂 直方向±10度以內。 又，例如在前述頂板構件之中央部的前述處理容器內 側，爲了形成對前述微波的共振區域，以突出的方式設有 斷面梯形的突起部，前述點燃用凹部形成在該突起部。 又’例如藉由本發明的頂板構件設計成前述處理容器 內的壓力’在電漿點燃時，設定在lOmTorr〜2Torr的範 圍內。 又’本發明爲一種電漿處理裝置，其特徵爲：具備： 頂壁部能開口、內部可真空吸引的處理容器、和用以載置 被處理體，設置在前述處理容器內的載置台、和用以將氣 體導入到前述處理容器內的氣體導入手段、和氣密的安裝 在前述處理容器的頂壁部之具有前述任一特徵的頂板構件 、和經由前述頂板構件朝前述處理容器內導入微波的微波 導入手段。 -9- 200908817 此情形下，即使依舊降低處理容器內的壓力’還是能 維持電漿的點燃性。因而，在處理容器內的壓力爲較高的 狀態下，可避免形成成膜，還可避免形成的低介電常數材 料的絕緣膜等的電性質下降。 例如前述微波導入手段是設置在前述頂板構件上，以 形成有放射微波的複數個狹縫的平面天線構件、和產生前 述微波的微波產生器、和將在前述微波產生器所產生的微 波導向前述平面天線構件的導波管所形成。 或者例如前述微波導入手段是設置在前述頂板構件上 ’以形成有放射微波的複數個狹縫的導波管、和產生前述 微波的微波產生器所形成。 又’本發明爲一種控制裝置，係爲控制具備：頂壁部 能開口、內部可真空吸引的處理容器、和用以載置被處理 體’設置在前述處理容器內的載置台、和用以將氣體導入 到前述處理容器內的氣體導入手段、和氣密的安裝在前述 處理容器的頂壁部之具有前述任一特徵的頂板構件、和經 由前述頂板構件朝前述處理容器內導入微波的微波導入手 段爲特徴的電槳處理裝置的控制裝置，其特徵爲：前述處 理容器內的壓力’在電漿點燃時，設定在l〇mT〇rr〜 2Torr的範圍內。 又’本發明爲一種記憶媒體’其特徵爲：記憶控制程 式’該控制程式爲將具備：頂壁部能開口、內部可真空吸 引的處理容器、和用以載置被處理體’設置在前述處理容 器內的載置台、和用以將氣體導入到前述處理容器內的氣 -10- 200908817 體導入手段、和氣密的安裝在前述處理容器的頂壁部之具 有前述任一特徵的頂板構件、和經由前述頂板構件朝前述 處理容器內導入微波的微波導入手段的電漿處理裝置，控 制成前述處理容器內的壓力，在電漿點燃時，設定在 lOmTorr〜2Torr的範圍內。 【實施方式】 [用以實施發明的最佳形態] 以下’針對實施本發明的最佳形態，根據所附圖面做 詳述。第I圖是表示本發明之電槳處理裝置的第1實施形 態的槪略構造圖。第2圖是表示第1圖之電漿處理裝置的 頂板構件的放大剖面圖。第3圖是表示第2圖之頂板構件 的下面的俯視圖。第4圖是表示設置在頂板構件的點燃用 凹部的直徑與電漿點燃等之該點燃用凹部之內周面的電場 強度之關係的座標圖。 如圖所示’本實施形態的電漿處理裝置42，是藉由 鋁等的導體構成側壁和底部，整體具有形成筒狀例如圓筒 體狀的處理容器44。處理容器44的內部是構成作爲密閉 的處理空間S’在該處理空間S形成電漿。又，處理容器 4 4本體被接地。 在處理容器44內，收容著在上面載置被處理體之例 如半導體晶圓W的載置台46。該載置台46是例如藉由已 被氧化鋁膜處理的鋁等，形成平坦的略圓板狀，例如夾介 著以絕緣性材料形成的支柱4 7，自容器底部立起。 -11 - 200908817 在載置台46的上面，設有用以在此保持晶圓的靜電 夾盤或夾具機構（圖未示）。再者，載置台46例如也有 連接於1 3.5 6MHz之偏壓用高頻電源的情形。又，配合需 要，也可在載置台46設置加熱用加熱器。又’在載置台 46，設有在搬出/搬入晶圓W之際，頂起該晶圓W的頂料 銷（圖未不）。 在處理容器44的側壁設有：作爲氣體導入手段48， 對處理容器內供給電漿用氣體（例如氬氣）的例如石英管 製的電漿氣體供給噴嘴48a、對處理容器內導入處理氣體 (例如沉積氣體）的例如石英管製的處理氣體供給噴嘴 48b ° 各氣體由該等的各噴嘴4 8 a、4 8 b，邊控制流量邊供 給。再者’氣體導入手段48例如也有使用石英製之淋浴 頭等的情形。 又’在容器側壁設有對處理容器44的內部用以搬入/ 搬出晶圓的開口 5〇。在該開口部5〇設有晶圓搬出/搬入時 進行開閉的閘閥5 2。又，在容器底部設有排氣口 5 4。在 該排氣□ 54連接有介設圖未示的真空泵和壓力調整閥的 排氣管路56°藉此，配合需要得以將處理容器44內真空 吸引到既定的壓力。 處理容器4 4的頂部被開口，於此夾介〇形環等的密 封構件6G氣密的設有頂板構件5 8。該頂板構件60是例 如藉由氮化銘（A1N )、氧化鋁（Al2〇3 )等的陶瓷構件、 石英等之透過微波（亦即具有透過性）的介電質板6 2所 -12- 200908817 構成。該介電質板62的厚度考慮到耐壓性，例如設定在 20mm左右。而且，在該介電質板62的下面，臨近處理 容器44內的面側（亦即處理容器內側），設有在電漿點 燃時供進行電場集中之本發明特徵的點燃用凹部64。有 關包括該點燃用凹部64的頂板構件5 8的構造，於後詳述 〇 在頂板構件5 8的上面側，設有用以經由該頂板構件 58朝處理容器44內導入微波的微波導入手段66。具體上 ，微波導入手段66具有設置在頂板構件68之上面的平面 天線構件68，在該平面天線構件68上設置具有高介電常 數特性的遲波構件70。又，平面天線構件68亦作爲覆 蓋遲波構件70之上方整面的導電性之中空圓筒狀容器的 導波箱72之底板的功能，面對處理容器44內的載置台 4 6° 導波箱7 2及平面天線構件6 8的周邊部共同接地。又 ，在導波箱70之上部的中心，連接有同軸導波管74的外 管74a，導波箱70之內部的內部導體74b，是通過遲波構 件7 0之中心的貫通孔，連接到平線天線構件6 8的中心部 。而且’同軸導波管74是介設模式變換器76及矩形導波 管78，連接到具有匹配電路80之例如2.45GHz的微波產 生器（微波產生手段）82，對平面天線構件68傳遞微波 。因而，模式變換器76是介設在以矩形導波管78與同軸 導波管7 4所形成的導波管的中途。 在此’從微波產生器82放射出例如TE模式的微波 -13 - 200908817 ，利用模式變換器7 6變換成例如τ Ε Μ模式。該頻率不限 於2.4 5GHz ’也可爲其他頻率例如8.35GHz或1 .98GHz。 再者’也可在導波箱72的上部設置圖未示的頂壁冷卻套 。而且，在導波箱72內，設置在平面天線構件68之上面 側具有高介電常數特性的遲波構件70，會因該波長縮短 效果而縮短微波的管內波長。作爲該遲波構件70例如可 使用與上述介電質板62相同的材料。 雖然平面天線構件6 8亦根據晶圓尺寸，但例如對應 8吋晶圓的情形下，例如以直徑爲3 00〜400mm、厚度1 〜數mm的導電性材料之銅板或鋁板所形成。該圓板的表 面例如鍍銀。爲了在該圓板放射微波，例如形成有藉由長 槽狀的貫通孔所形成的多數個狹縫84。該狹縫84的配置 形態未特別限定，例如可爲同心圓狀、渦輪狀或放射狀配 置，也可爲均勻的分佈在天線構件整面。 形成頂板構件5 8的介電質板62之上面側是形成大致 平坦。對此，在介電質板62的下面側亦即臨近處理容器 44之處理空間S側的面，形成有如日本特開2005 - 1 0093 1 號公報所揭示的突起部。具體上如第2圖及第3圖所示， 在介電質板62的微波導入部的中心部與中周部、外周部 ，分別形成有突起部86、88、90，亦即改變介電質板62 的板厚。在此，中心部之突起部8 6的周邊面成爲錐面 86a，中周部之突起部88的內外周面成爲錐面88a，外周 部之突起部90的內周面成爲錐面90a。 外周部的突起部90及中周部的突起部88是沿著介電 -14 - 200908817 質板62的周方向形成環狀。突起部9〇其內周側成爲錐面 ’突起部8 8其內外周側成爲錐面。 又’中心部的突起部8 6是成爲斷面梯形或截頭圓錐 形’亦即其周狀的側面成爲錐面。在此，微波從平面天線 構件68導入到介電質板62側的話，在介電質板62之正 下方產生的電漿’作爲對微波形成強烈的反射板作用（此 種電漿稱爲「表面波電漿」）。此結果，微波在介電質板 62內，一邊重複在上面側與下面側反射、—邊形成上下 方向振動的定在波。在此情形下，因爲各突起部86、88 、90的一側面或兩側面成爲錐面，所以在介電質板62內 存在著上下方向振動的振幅與各突起部86、88、90之面 方向的厚度一致的區域，於此形成共振區域，得以提高電 漿密度。 而且，如前述，對應介電質板6 2的中心部（自上方 導入微波的微波導入部），形成有供電漿點燃時進行電場 集中的點燃用凹部64。在此，點燃用凹部64是形成在突 起部86的中央。該點燃用凹部64是以斷面圓形的孔所形 成。由於即使在電漿壓力爲50mT〇rr以下的低壓’也不會 讓電漿發生點燃，因此其直徑D係以微波的介電質板62 中的波長爲λ ,設定在2. λ /8 λ /8的範圔內。 此情形下，直徑D設定在3 . λ /8更佳。 又，有關點燃用凹部64的深度H，亦設定在2 · λ /8 ‘ H S 4 . λ /8的範圍內。點燃用凹部64所需要的功能， 是爲了在電漿點燃時’在此部分產生電場集中’在電^點 -15 - 200908817BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma plate member for use in processing by a microwave wafer or the like. [Prior Art] In recent years, in the manufacturing process of high-density chemical products for semiconductor products, there have been many cases in which plasma processing apparatuses are used for film formation and uranium processing. The state of 1 3 . 3 mP a ) to several Torr (hundreds of Pa) is also stable, and the plasma can be erected, and the tendency of the microwave plasma processing apparatus having the density plasma is disclosed in Japanese Patent Publications 1 to 5. (Patent No. I3 - 1 9 1 073, Patent Document 2: Japanese Patent Laid-Open Publication No. JP-A No. Hei No. Hei No. Hei. Here, an example of a general electric paddle processing apparatus of Figs. 8 and 9 and a wave will be referred to. Fig. 9 is a schematic structural view of the eighth plasma processing apparatus, and Fig. 9 is an enlarged sectional view. As shown in Fig. 8, in the processing container 4 in which the conventional plasma is suctioned, four plasmas are placed, and the semiconductor device and the top of the semiconductor are used to be highly refined. Various types of ashing, etc., especially in O.lmTorr (the use of high-pressure vacuum is high in the use of microwaves. Such a plasma processing apparatus J. Document 1: Japanese Patent Laid-Open No. Hei 5-343334, Patent Document 4 :Special;:Special opening 2005-1 0093 1 Explanation of the use of micrographs It is not known in general that the top device is a device 2, which is true: the placement of the conductor wafer W-5 - 200908817 Table 6. On the top of the mounting table 6, a disk-shaped top plate member 8 that transmits microwaves is provided in an airtight manner. The top plate member 8 is made of a dielectric plate such as aluminum or tin nitride or quartz. Further, a side wall 'of the processing container 4 is provided with a gas introduction means for introducing a predetermined gas into the processing container 4, for example, a gas nozzle 100. Further, 'the side wall of the processing container 4' is provided with a carry-out/ The opening portion 1 2 for loading the wafer W. The opening portion 1 2 is provided with a gas-tight opening and closing gate valve G Further, an exhaust port 14 is provided at the bottom of the processing container 4. A vacuum evacuation system (not shown) is connected to the exhaust port 14 to draw the inside of the processing container 4 into a vacuum. Further, in the top plate member 8 The upper side is provided with a microwave introducing means 16 for introducing microwaves for forming plasma into the processing container 4. Specifically, the microwave introducing means 16 has a disk shape provided on the upper surface of the top plate member 8 to a thickness of about several mm. The planar antenna member 18 and the late wave member 20 formed of, for example, a dielectric for shortening the wavelength of the microwave in the radial direction of the planar antenna member 18. The planar antenna member 18 is formed, for example, of a copper plate. The planar antenna member 18 is formed with a plurality of slits 22 for microwave radiation formed, for example, by long-groove through holes. The slits 22 are generally arranged concentrically or in a turbine shape. Moreover, the coaxial waveguide The center conductor 24A of 24 is connected to the planar antenna member 18, and the outer conductor 24b of the coaxial waveguide 24A is connected to the central portion of the waveguide case 25 covering the entirety of the delayed wave member 20. Moreover, it is generated by microwave. 26 generated For example, a microwave of 2.45 GHz is converted into a predetermined vibration mode by the mode converter 28, and then guided to the planar antenna member 18 or the delayed wave member 20. Moreover, the microwave is directed toward the radial direction of the antenna member -6-200908817 18 The radial transfer is radiated from the slits 22 provided in the planar antenna member 18, and the microwaves penetrate the top plate member 8 and are guided to the lower processing container 4. The plasma is erected in the processing space of the processing container 4 due to the microwave. S, the semiconductor wafer W is subjected to a predetermined plasma treatment such as etching or film formation, and a cooler 30 for cooling the delayed wave member 20 heated by the dielectric loss of the microwave is provided on the upper surface of the waveguide box 25. Although the thickness of the dielectric plate constituting the top plate member 8 is uniform, the entire surface is uniformly formed. However, in order to achieve uniformization of the pitch density in the in-plane direction of the processing space S, various methods are required. For example, as shown in Fig. 9 (see Patent Document 5), the microwave portion (upper side) at the center portion of the top plate member 8 can be formed with a recessed portion 32 for eliminating the electric field from being concentrated. Further, protrusions 3 4 a, 3 4 b, and 3 4 c having a trapezoidal or triangular cross section are formed on the center portion, the middle portion, and the outer peripheral portion of the lower surface side of the top plate member 8 to form a resonance with respect to microwaves. region. In this case, a stable plasma is formed from a low pressure to a high pressure. However, for the purpose of further improving the operating speed, for example, a material constituting a semiconductor device such as an interlayer insulating film, a low dielectric constant material such as a SiOC film, a SiOCH film, a CF film or the like is used (so-called Low). -k material). Further, in order to make the electrical properties of the interlayer insulating film or the like having a low dielectric constant material better, it is desirable to form a low pressure, for example, 50 m T 〇rr (wherein the film formation process is possible as far as possible in the range of yields at which rationality can be obtained). 6.7 P a ) below. As is well known, if the pressure in the processing container 4 is too low, the plasma will not ignite even if the microwave power to be injected is increased. Therefore, in the past, when the plasma was ignited in 200908817, the pressure in the processing container 4 was set slightly higher, and after the plasma was ignited, the pressure in the processing container 4 was lowered to perform a film forming process. Further, once the plasma is ignited, it has a characteristic of sufficiently maintaining stability even if the pressure drop in the post-treatment container 4 is too low. However, as described above, 'when the plasma is ignited', even if the pressure in the processing container 4 is temporarily raised, the plasma can be ignited. 'Because the film forming gas is flowing during ignition, it is in a short time but in the plasma. Film formation of a low dielectric constant material is performed under high pressure. Further, the film deposited at this time deteriorates the electrical properties of the entire insulating film. On the other hand, in order to improve the ignitability of the plasma, it is also conceivable to form a large projection portion downward in the central portion of the lower surface of the top plate member, thereby generating electric field concentration. However, in this case, after the plasma is ignited, the electric field concentration is continuously generated in this portion, and the uniformity of the electric blade density in the planar direction is largely disintegrated. SUMMARY OF THE INVENTION The present invention has been made in view of the above problems and has been invented for solving the problems. SUMMARY OF THE INVENTION An object of the present invention is to provide a top plate member which does not deteriorate the ignitability of plasma, and an electric hair processing device using the same, even if the pressure in the processing container is still low. The present invention is a top plate member which is formed by treating a body to be processed by a plasma generated by microwaves to be disposed on the top of a vacuum-aspitable processing container, and having a dielectric plate that transmits the microwave function. The top plate member is characterized in that, inside the processing container of the top plate member, a recess for igniting for concentrating an electric field when the plasma is ignited is provided. -8 - 200908817 With this feature, the ignitability of the plasma can be maintained even if the pressure in the processing container is still lowered. Therefore, in the state where the pressure in the processing container is high, film formation can be prevented, and the electrical properties of the insulating film or the like of the formed low dielectric constant material can be prevented from deteriorating. For example, the recess for ignition has a diameter D in a range of wavelengths λ, 2·A/8SDS4·λ/8 in the dielectric plate of the microwave. Further, for example, the recess for igniting has a depth Η in a range of λ, 2· λ/8$ Η $4. λ/8 in the dielectric plate of the microwave. Further, for example, the side surface on the inner side of the recessed portion for ignition is set to be within ±10 degrees from the vertical direction. Further, for example, in the inner side of the processing container at the center portion of the top plate member, in order to form a resonance region with respect to the microwave, a projection having a trapezoidal cross section is provided so as to protrude, and the recess for ignition is formed in the projection. Further, for example, the pressure of the inside of the processing container by the top plate member of the present invention is set to be in the range of 10 mTorr to 2 Torr when the plasma is ignited. Further, the present invention provides a plasma processing apparatus comprising: a processing container in which a top wall portion can be opened, a vacuum suction inside; and a mounting table provided in the processing container, and a processing container for placing the object to be processed; And a gas introduction means for introducing a gas into the processing container, and a top plate member having any of the above features attached to the top wall portion of the processing container, and introducing microwaves into the processing container via the top plate member The means of microwave introduction. -9- 200908817 In this case, the ignitability of the plasma can be maintained even if the pressure inside the processing container is still lowered. Therefore, in a state where the pressure in the processing container is high, formation of a film can be avoided, and deterioration of electrical properties of an insulating film or the like of the formed low dielectric constant material can be avoided. For example, the microwave introducing means is a planar antenna member provided on the top plate member to form a plurality of slits for radiating microwaves, and a microwave generator for generating the microwave, and a microwave generated by the microwave generator to be guided to the foregoing The waveguide tube of the planar antenna member is formed. Alternatively, for example, the microwave introducing means may be formed by a waveguide provided on the top plate member to form a plurality of slits for radiating microwaves, and a microwave generator for generating the microwave. Further, the present invention is a control device comprising: a processing container having a top wall portion that can be opened, a vacuum suction inside, and a mounting table for placing the object to be processed in the processing container; a gas introduction means for introducing a gas into the processing container, and a top plate member having any of the above features attached to the top wall portion of the processing container, and a microwave introduction for introducing microwaves into the processing container via the top plate member The device is a control device for a special electric blade processing device, characterized in that the pressure in the processing container is set in a range of l〇mT〇rr to 2 Torr when the plasma is ignited. Further, the present invention is a memory medium characterized by: a memory control program 'the control program is provided with a processing container capable of opening the top wall portion, vacuuming the inside, and placing the object to be processed' a mounting table in the processing container, and a gas introduction means for introducing a gas into the processing container, and a top plate member having any of the above features, which is airtightly attached to a top wall portion of the processing container, The plasma processing apparatus of the microwave introduction means for introducing microwaves into the processing container through the top plate member is controlled to be in the pressure in the processing container, and is set in a range of 10 mTorr to 2 Torr when the plasma is ignited. [Embodiment] [Best Mode for Carrying Out the Invention] Hereinafter, the best mode for carrying out the invention will be described in detail with reference to the drawings. Fig. 1 is a schematic structural view showing a first embodiment of the electric blade processing apparatus of the present invention. Fig. 2 is an enlarged cross-sectional view showing a top plate member of the plasma processing apparatus of Fig. 1. Fig. 3 is a plan view showing the lower surface of the top plate member of Fig. 2; Fig. 4 is a graph showing the relationship between the diameter of the illuminating recessed portion provided in the top plate member and the electric field intensity of the inner peripheral surface of the igniting recessed portion such as plasma ignition. As shown in the figure, the plasma processing apparatus 42 of the present embodiment has a side wall and a bottom portion formed of a conductor such as aluminum, and has a processing container 44 formed in a cylindrical shape, for example, a cylindrical shape as a whole. The inside of the processing container 44 is formed as a sealed processing space S' to form a plasma in the processing space S. Further, the body of the processing container 44 is grounded. In the processing container 44, a mounting table 46 on which a semiconductor wafer W such as a semiconductor wafer W is placed is placed. The mounting table 46 is formed in a flat, slightly disk shape by, for example, aluminum or the like which has been treated with an aluminum oxide film. For example, the pillars 47 formed of an insulating material are interposed from the bottom of the container. -11 - 200908817 On the upper surface of the mounting table 46, an electrostatic chuck or a jig mechanism (not shown) for holding the wafer therein is provided. Further, the mounting table 46 may be connected to, for example, a bias high frequency power supply of 13.56 MHz. Further, a heating heater may be provided on the mounting table 46 in accordance with the need for cooperation. Further, the mounting table 46 is provided with a top pin for lifting the wafer W when loading/unloading the wafer W (not shown). In the side wall of the processing container 44, as the gas introduction means 48, for example, a plasma-controlled plasma gas supply nozzle 48a for supplying a plasma gas (for example, argon gas) into the processing container is introduced, and a processing gas is introduced into the processing container ( For example, a quartz gas-regulated process gas supply nozzle 48b for a deposition gas) is supplied from each of the nozzles 4 8 a and 4 8 b while controlling the flow rate. Further, the gas introduction means 48 may be, for example, a shower head made of quartz or the like. Further, an opening 5 for carrying in/out the wafer inside the processing container 44 is provided on the side wall of the container. The opening portion 5 is provided with a gate valve 52 that opens and closes when the wafer is carried out/loaded. Further, an exhaust port 504 is provided at the bottom of the container. An exhaust line 56 through which a vacuum pump and a pressure regulating valve (not shown) are connected is connected to the exhaust port 54, whereby the vacuum in the processing container 44 is sucked to a predetermined pressure as needed. The top of the processing container 44 is opened, and the sealing member 6G of the sandwiching ring or the like is airtightly provided with the top plate member 58. The top plate member 60 is, for example, a ceramic member such as Niobium (A1N) or alumina (Al2〇3), or a dielectric plate (e.g., transmissive) having a microwave (i.e., permeability). 200908817 constitutes. The thickness of the dielectric plate 62 is set to be about 20 mm in consideration of pressure resistance. Further, on the lower surface of the dielectric plate 62, adjacent to the surface side of the inside of the processing container 44 (i.e., inside the processing container), an illuminating concave portion 64 for carrying out electric field concentration at the time of plasma ignition is provided. The structure of the top plate member 58 including the illuminating recessed portion 64 will be described later. 微波 On the upper surface side of the top plate member 58, a microwave introducing means 66 for introducing microwaves into the processing container 44 via the top plate member 58 is provided. Specifically, the microwave introducing means 66 has a planar antenna member 68 disposed above the top plate member 68, and a late wave member 70 having a high dielectric constant characteristic is disposed on the planar antenna member 68. Further, the planar antenna member 68 also functions as a bottom plate of the waveguide box 72 covering the conductive hollow cylindrical container over the entire upper surface of the delayed wave member 70, and faces the mounting table in the processing container 44. The box 7 2 and the peripheral portion of the planar antenna member 68 are commonly grounded. Further, an outer tube 74a of the coaxial waveguide 74 is connected to the center of the upper portion of the waveguide box 70, and the inner conductor 74b inside the waveguide box 70 is connected to the through hole at the center of the late wave member 70. The center portion of the flat wire antenna member 68. Further, the coaxial waveguide 74 is provided with a mode converter 76 and a rectangular waveguide 78, and is connected to a microwave generator (microwave generating means) 82 of, for example, 2.45 GHz having a matching circuit 80, and transmits microwaves to the planar antenna member 68. Therefore, the mode converter 76 is interposed in the middle of the waveguide formed by the rectangular waveguide 78 and the coaxial waveguide 74. Here, the microwave generator - for example, TE mode -13 - 200908817 is radiated from the microwave generator 82, and is converted into, for example, the τ Μ Μ mode by the mode converter 76. The frequency is not limited to 2.4 5 GHz' and may be other frequencies such as 8.35 GHz or 1.98 GHz. Further, a top wall cooling jacket (not shown) may be provided on the upper portion of the waveguide box 72. Further, in the waveguide box 72, the evanescent member 70 having a high dielectric constant characteristic provided on the upper surface side of the planar antenna member 68 shortens the intra-tube wavelength of the microwave due to the wavelength shortening effect. As the late wave member 70, for example, the same material as the above dielectric plate 62 can be used. Although the planar antenna member 68 is also in accordance with the wafer size, for example, in the case of a 8-inch wafer, for example, a copper plate or an aluminum plate of a conductive material having a diameter of 300 to 400 mm and a thickness of 1 to several mm is formed. The surface of the disc is, for example, silver plated. In order to radiate microwaves to the disk, for example, a plurality of slits 84 formed by long through-holes are formed. The arrangement of the slits 84 is not particularly limited, and may be, for example, a concentric shape, a turbine shape, or a radial arrangement, or may be uniformly distributed over the entire surface of the antenna member. The upper surface side of the dielectric plate 62 forming the top plate member 58 is formed to be substantially flat. On the lower surface side of the dielectric material plate 62, that is, the surface on the side of the processing space S of the processing container 44, a projection portion as disclosed in Japanese Laid-Open Patent Publication No. 2005-10093 is formed. Specifically, as shown in FIGS. 2 and 3, protrusions 86, 88, and 90 are formed in the central portion, the middle portion, and the outer peripheral portion of the microwave introduction portion of the dielectric plate 62, that is, the dielectric is changed. The thickness of the plate 62. Here, the peripheral surface of the projection portion 86 of the center portion is a tapered surface 86a, the inner and outer peripheral surfaces of the projection portion 88 of the middle peripheral portion are tapered surfaces 88a, and the inner circumferential surface of the projection portion 90 of the outer peripheral portion is a tapered surface 90a. The projection portion 90 of the outer peripheral portion and the projection portion 88 of the middle peripheral portion are formed in a ring shape along the circumferential direction of the dielectric plate 62 of the dielectric -14 - 200908817. The projection portion 9 has a tapered surface on the inner peripheral side. The projection portion 8 has a tapered surface on the inner and outer peripheral sides. Further, the projection portion 86 of the center portion has a trapezoidal shape or a frustoconical shape, that is, the circumferential side surface thereof becomes a tapered surface. Here, when the microwave is introduced from the planar antenna member 68 to the side of the dielectric plate 62, the plasma generated immediately below the dielectric plate 62 acts as a strong reflecting plate for the microwave (this plasma is called " Surface wave plasma"). As a result, in the dielectric plate 62, the microwaves are repeatedly reflected on the upper side and the lower side, and a fixed wave which vibrates in the up and down direction is formed. In this case, since one side surface or both side surfaces of the projections 86, 88, and 90 are tapered, the amplitude of the vibration in the vertical direction and the surface of each of the projections 86, 88, and 90 are present in the dielectric sheet 62. The region of uniform thickness in the direction forms a resonance region here to increase the plasma density. Further, as described above, the center portion of the dielectric plate 626 (the microwave introducing portion into which the microwave is introduced from above) forms the illuminating concave portion 64 for concentrating the electric field when the power supply slurry is ignited. Here, the ignition recess 64 is formed at the center of the projection 86. The ignition recess 64 is formed by a circular hole having a circular cross section. Since the low voltage ' below the plasma pressure of 50 mT 〇rr does not ignite the plasma, the diameter D is set to 2. λ /8 λ in the microwave dielectric plate 62. /8 of Fan Yi. In this case, the diameter D is set to be 3. λ / 8 is more preferable. Further, the depth H of the recess 64 for ignition is also set in the range of 2 · λ /8 ‘ H S 4 . λ /8. The function required to ignite the recess 64 is to generate an electric field concentration in the portion of the plasma when it is ignited at the electric point -15 - 200908817
場 述 部 述 在 左 之 土 該 產 如 的 s c 據 各 率 行 器 W 燃後’提昇電漿密度之處理空間S的均勻性，解決該電 集中。爲了滿足此種功能，有關點燃用凹部64之如上 的尺寸條件就很重要。尤其上述尺寸條件內，點燃用凹 64的直徑D的條件就相當重要。亦即，直徑d脫離上 之範圍內的話’不足以產生電場的集中，電漿不可能 5 0mTorr以下的低壓點燃。 在本實施形態中’當中一例，直徑D設定在20mm 右’且深度Η設定在10mm左右。又，點燃用凹部64 內側的側面64a，設定在對垂直方向（重力方向）94, 度以內的角度範圍內爲宜。脫離該角度範圍，如果 側面6 4 a爲傾斜很大的錐面’就不會在點燃用凹部6 4 生足夠的電場集中，無法引起電漿點燃。 又’如上形成的電漿處理裝置4 2的整體動作，例 藉由以電腦等所形成的控制手段96控制。進行該動作 電腦的程式’得以記憶在可撓性碟片、CD ( c〇mpact Di )、快閃記憶體、硬碟等的記憶媒體9 8。具體上，根 來自控制手段96的指令’執行各氣體的供給/停止、 氣體的流量控制、微波或頻率的供給/停止、微波或頻 的電力控制、製程溫度、製程壓力等的控制等。 其次，針對使用如上所構成的電漿處理裝置4 2進 的處理方法做說明。首先’打開閘閥52，經由開口 50 將丰導體晶圓W藉由運送臂（圖未示）運入到處理容 4 4內’使頂料銷（圖未示）上下移動，藉此將該晶圓 載置在載置台46之上面的載置面。 -16- 200908817 而且，對處理容器44內，從電漿氣體供給噴嘴48a 例如一邊流量控制一邊供給氬氣，並且從處理氣體供給噴 嘴4 8 b配合處理形態例如成膜處理的話，~邊流量控制一 邊供給成膜用氣體。同時，在微波產生器28產生的微波 ’經由矩形導波管7 8及同軸導波管7 4，供給到平面天線 構件68。而且，對處理空間S，導入因遲波構件70縮短 波長的微波。藉此在處理空間S產生電漿，進行既定的電 漿處理。 在此’在微波產生器82產生的例如2.45GHz之TE 模式的微波，經矩形導波管7 8傳遞後，利用模式變換器 76變換成TEM模式。該TEM模式的微波，如上述，傳遞 到同軸導波管7 4內’到達導波箱7 2內的平面天線構件 68 ’從連接著內部導體74b之圓板狀的平面天線構件68 之中心部’放射狀的傳遞到周邊部。而且該微波在該傳遞 期間’從多數形成在平面天線構件68的狹縫84，通過頂 板構件58，導入到平面天線構件68之正下方的處理空間 S。因該微波被激勵的氬氣，會解離而電漿化，擴散到該 下方’使處理氣體活性化’製作特性種。藉由該活性種的 作用，對晶圓W的表面施行既定的電漿處理。 在此’在本貫施形態中，由於改變因電漿CVD而成 膜的低介電常數（L 〇 w - k )之薄膜的電性質，因此處理容 器44內的壓力（亦即製程壓力）也包括電漿點燃時，成 膜中設定在常時低壓例如50mTorr以下。 在習知之電漿處理裝置，電漿點燃時的壓力在 -17- 200908817 5 0mT〇rr以下，由於壓力過低’電槳不會產生點燃。因而 ，電獎點燃時，稍微提高設定處理容器內的壓力’電漿點 燃後使壓力下降。對此在本實施形態的情形下’如上述’ 在構成頂板構件58的介電質板62之中央部（微波導入部 )的下面側，設置點燃用凹部64 ’藉此在該部分產生電 場集中，即使處理容器44內的壓力爲50mTorr以下的低 壓’也能使電漿點燃。而且’電漿點燃後’亦能依舊將處 理容器44內的壓力（製程壓力）維持在5〇mTorr以下進 行成膜處理。 即使本實施形態，電漿點燃的話’也因爲利用點燃用 凹部64解決電場集中，所以在點燃用凹部64的電漿密度 不會過度昇高。此理由係如前述’一旦在處理空間S產生 電漿，爲了生成表面波電漿’微波會一邊上下反射一邊朝 半徑方向外邊傳遞到介電質板62內’從周邊部反射。該 點燃用凹部的尺寸設定成因該反射波而在點燃用凹部64 內微波互相抵消。 又，在本實施形態中，由於分別在介電質板6 2之中 央部、中周部及周邊部，設置具有錐面的突起部86、88 、90，因此亦如日本特開2005- 1 0093 1號公報所說明的， 無論哪種電漿條件都能形成共振區域。因此，例如即使製 程壓力產生變化，也能提高電漿密度，穩定的形成電漿。 在此，針對點燃用凹部64的直徑D與電漿點燃時的 點燃用凹部64的內周面（更詳細是凹部的側面與底面的 角部）的電漿強度之關係進行評估。有關該評估結果參照 -18- 200908817 第4圖做說明。 在第4圖中，A是表示介電質板62之微波的波長。 由第4圖即可明白，在直徑D爲3. λ /8時，產生電場集 中，電場強度最大，亦即電場強度的峰値點。以此峰値點 爲中心，電場強度在左右急遽的下降。而且，在2·又/8 及4 · λ /8時，電場強度下降到峰値時之電場強度的65% 左右。電場集中比此時的電場強度更爲下降的話，在 5 OmTorr以下的低壓不會產生電漿點燃。因而，可以理解 點燃用凹部64的直徑D的上限爲4 . λ /8，下限爲2 · λ /8 ° 再者，在實際的電漿處理中，膜質沒有問題的話，也 包括電漿點燃時的壓力，製程壓力的上限爲2T〇rr左右。 像這樣，在頂板構件5 8之介電質板6 2的處理容器 4 4側，設有供電漿點燃時進行電場集中的點燃用凹部6 4 ，藉此即使依舊降低處理容器44內的壓力，還是能維持 (提昇）電漿的點燃性。 因而，在處理容器44內的壓力爲較高的狀態下，可 避免完成成膜，還可避免形成的低介電常數材料的絕緣膜 等的電性質下降。 <因模擬的電場強度之變化> 其次，藉由模擬求得電漿點燃時的頂板構件之電場強 度的變化。針對其模擬結果做說明。 第5A圖是表示電漿點燃時及電漿點燃後之習知的頂 -19- 200908817 板構件的電場強度（電場分佈）之模擬結果的模式圖。第 5B圖是表示電漿點燃時及電漿點燃後之藉由本發明的頂 板構件的電場強度（電場分佈）之模擬結果的模式圖。 第5 A圖所示的習知頂板構件8是與第9圖所說明的 頂板構件相同的構造。其材料是氮化鋁，形成在其中央部 之上面的凹部直徑D，爲了抵消傳遞於此的微波，防止電 場集中，設定在30mm左右。 一方面，第5B圖所示的本發明之頂板構件，是與先 前說明的頂板構件相同的構造。其材料是氮化鋁，點燃用 凹部64的直徑D設定在20mm。 再者，微波的頻率同時設置在2.4 5GHz。 如第5 A圖所示，在習知的頂板構件8，在電漿點燃 時及電漿點燃後，電場集中幾乎不會發生在頂板構件的中 心部，電場分佈比較均勻。藉此可理解形成的電漿很穩定 〇 對此如第5 B圖所示，在本發明的頂板構件5 8，可理 解在電漿點燃時，大多的電場集中是發生在中央的點燃用 凹部64且也可理解一旦發生電漿點燃，使電漿穩定化的 話，點燃用凹部64的電場集中會解除，電場分佈比較均 勻。 像這樣，在本發明的頂板構件58中，可藉由上述模 擬確認，只有在電漿點燃時電場集中會發生在點燃用凹部 64，點燃後該電場集中會被解除。 -20- 200908817 <有關實際之頂板構件的驗證> 其次’實際製作在上述之模擬的頂板構件，驗證有無 電漿點燃。針對其結果做說明。 第6A圖是表示有關習知之頂板構件，驗證有無（可 否）電漿點燃之結果的表圖。第6B圖是表示有關藉由本 發明之頂板構件，驗證有無（可否）電漿點燃之結果的表 圖。在此，處理容器內的電槳點燃時的壓力是在1〇〜 200mT〇rr的範圍內做各種變化，並且微波的功率也在 10G0〜30 00瓦特的範圍內做各種變化。又，氬氣是作爲 電槳用的氣體供給。 在圖中，“〇”印記表示發生電漿點燃，無印記（空 白）表示電漿無法點燃。 如第6A圖所示，在習知之頂板構件的情形下，處理 容器內的壓力在80〜200mTorr的範圍，微波功率在1〇〇〇 〜3000瓦特的範圍內，全部會發生電漿點燃。可是壓力 在50mTorr以下，無論在上述範圍內怎樣變化微波功率， 都不會發生電漿點燃。 對此，如第6 B圖所示，在本發明之頂板構件的情形 下，處理容器內的壓力在80〜200mTorr的範圍，與第6A 圖的習知頂板構件同樣的，微波功率在1〇〇〇〜3 000瓦特 的範圍內，全部會發生電漿點燃。又，雖然處理容器內的 壓力在 10〜50mTorr的範圍，微波功率在1000〜1600瓦 特的範圍內，不會發生電漿點燃，但微波功率在1800〜 3000瓦特的範圍內，會發生電漿點燃。 -21 - 200908817 —般雖然微波多數使用在2500瓦特附近，但 此情形下’藉由本發明的頂板構件，連習知頂板構 進行電漿點燃的1 0〜50mTorr的低壓，都能充分的 漿點燃。 <第2實施形態> 在前述第1實施形態中，在頂板構件5 8的下 有突起部86' 88、90。可以只設置該三種突起部 一種或兩種的突起部，或者也可以在未設突起部之 的頂板構件的下面設置點燃用凹部。 第7圖是表示有關本發明之頂板構件的第2實 的剖面圖。在此，在扁平狀（平面狀）的頂板構件 中心部的下面設有點燃用凹部64。本實施形態的 凹部64的直徑 '深度的尺寸條件與第1實施形態相 此種第2實施形態的情形，有關電場分佈的均 略比第1實施形態低。可是連在10〜50mTorr左右 ，都能發生電漿點燃的此點，就能發揮與第1實施 樣的作用效果。 再者，在以上的各實施形態的說明中，雖以使 天線構件68的電漿處理裝置作爲微波導入手段66 分爲例做說明，但不限於此。例如日本特開平11 公報所揭示，本發明也可應用在所謂的在環狀導波 面直接形成狹縫，具有該狹縫的導波管直接設置在 件的上面的導波管狹縫型的電漿處理裝置。 確認在 件無法 進行電 面，設 之中的 扁平狀 施形態 58之 點燃用 I同。 勻性， 的低壓 形態同 用平面 的一部 -40397 管的下 頂板構 -22- 200908817 又，在以上的說明中，雖是以電漿成膜處理作爲電漿 處理爲例來說明，但有關所謂的電漿鈾刻處理、電漿灰化 處理、電漿冷卻處理等的電漿處理，可應用本發明。 進而，雖以氬氣作爲電漿用氣體爲例做說明，但不限 於此，可以使用He、Ne等的其他惰性氣體，且不限於惰 性氣體，如果藉由電漿進行解離的氣體（例如C4F8、（：5F8 等的CF系氣體），什麼樣的氣體都可使用。 又，在此雖以半導體晶圓作爲被處理體爲例做說明， 但不限於此，本發明也可應用在玻璃基板、LCD基板、陶 瓷基板等。 【圖式簡單說明】 第1圖是表示本發明之電漿處理裝置的第1實施形態 的槪略構造圖。 第2圖是表示第1圖之電駿處理裝置的頂板構件的放 大剖面圖。 第3圖是表示第2圖之頂板構件的下面的俯視圖。 第4圖是表示設置在頂板構件的點燃用凹部的直徑與 電漿點燃等之該點燃用凹部之內周面的電場強度之關係白勺 座標圖。 第5 A圖是表示電漿點燃時及電漿點燃後之習知的頂 板構件的電場強度之模擬結果的模式圖。 第5B圖是表示電漿點燃時及電漿點燃後之藉由本發 明的頂板構件的電場強度之模擬結果的模式圖。 -23- 200908817 第6A圖是表示有關習知之頂板構件，驗證有無（可 术）電獎點燃之結果的表圖。 第6B圖是表不有關藉由本發明之頂板構件’驗證有 (句·否）電漿點燃之結果的表圖。 無 第7圖是表不有關本發明之頂板構件的第2實施形態 的剖面圖。 第8圖是表示習知一般的電漿處理裝置之一例槪略構 造圖。 第9圖是表示第8圖之電漿處理裝置的頂板構件的放 大剖面圖。 ^主要元件符號說明】 S :處理空間 42 ··電漿處理裝置 4 4 :處理容器 46 :載置台 47 :支柱 48 :氣體導入手段 4 8 a :電漿氣體供給噴嘴 48b :處理氣體供給噴嘴 50 :開口 5 2 :閘閥 5 4 :排氣口 5 6 :排氣管路 -24- 200908817 5 8 :頂板構 6 〇 :密封構 62 :介電質 64 :點燃用 64a :側面 66 :微波導 68 :平面天 70 :遲波構 72 :導波箱 74 :同軸導 74a :外管 7 4b :內部_ 76 :模式變 7 8 :矩形導 8 0 :匹配電 8 2 :微波產 84 :狹縫 86 、 88 、 90 86a、 88a、 94 :垂直方 9 6 :控制手 9 8 :記憶媒 W :晶圓 D :直徑 件 件 板 凹部 入手段 線構件 件 波管 f體 換器 波管 路 生器（微波產生手段） :突起部 90a :錐面 向（重力方向） 段 體 -25-The s c of the left-hand soil is solved according to the uniformity of the processing space S of the plasma density after the fuel cell is burned to solve the electric concentration. In order to satisfy such a function, the above dimensional conditions regarding the igniting recess 64 are important. Especially in the above dimensional conditions, the condition of the diameter D of the recess 64 for ignition is quite important. That is, if the diameter d is out of the range, it is not sufficient to cause concentration of the electric field, and the plasma may not be ignited at a low pressure of 50 mTorr or less. In one of the embodiments, the diameter D is set to 20 mm right and the depth Η is set to about 10 mm. Further, it is preferable that the side surface 64a on the inner side of the illuminating recessed portion 64 is set within an angle range within a degree of the vertical direction (gravity direction) 94. Deviation from this angle range, if the side surface 6 4 a is a tapered surface having a large inclination, a sufficient electric field concentration is not generated in the ignition recess portion 64, and the plasma cannot be ignited. Further, the overall operation of the plasma processing apparatus 42 formed as described above is controlled by a control means 96 formed by a computer or the like. The program of the computer is stored in a memory medium such as a flexible disc, a CD (c〇mpact Di), a flash memory, a hard disk, or the like. Specifically, the command "from the control means 96" performs supply/stop of each gas, flow control of the gas, supply/stop of microwave or frequency, control of microwave or frequency power, control of process temperature, process pressure, and the like. Next, a description will be given of a processing method using the plasma processing apparatus 42 constructed as above. First, the gate valve 52 is opened, and the conductive conductor wafer W is transported into the processing capacity 4 through the transport arm (not shown) via the opening 50 to move the top pin (not shown) up and down, thereby loading the wafer. The mounting surface is placed on the upper surface of the mounting table 46. In the processing container 44, for example, when the argon gas is supplied from the plasma gas supply nozzle 48a while the flow rate is being controlled, and the processing gas supply nozzle 48b is processed in a form, for example, a film formation process, the flow rate control is performed. The film forming gas is supplied. At the same time, the microwave ' generated by the microwave generator 28 is supplied to the planar antenna member 68 via the rectangular waveguide 74 and the coaxial waveguide 74. Further, in the processing space S, microwaves whose wavelengths are shortened by the delayed wave member 70 are introduced. Thereby, plasma is generated in the processing space S, and a predetermined plasma treatment is performed. Here, the microwave of the TE mode of, for example, 2.45 GHz generated by the microwave generator 82 is transmitted through the rectangular waveguide 78, and then converted into the TEM mode by the mode converter 76. The TEM mode microwave, as described above, is transmitted to the coaxial waveguide member 74. The planar antenna member 68' that reaches the waveguide box 7 2 is connected from the center portion of the disk-shaped planar antenna member 68 to which the inner conductor 74b is connected. 'radial transmission to the peripheral part. Further, the microwave is introduced into the processing space S directly below the planar antenna member 68 from the slit 84 formed in the planar antenna member 68 by the top plate member 58 during the transfer. The argon gas excited by the microwave is dissociated and plasmad, and diffused below the 'activation of the processing gas' to produce a characteristic species. The surface of the wafer W is subjected to a predetermined plasma treatment by the action of the active species. Here, in the present embodiment, the pressure in the processing vessel 44 (that is, the process pressure) is changed by changing the electrical properties of the film having a low dielectric constant (L 〇 w - k ) formed by plasma CVD. When the plasma is also ignited, the film formation is set to a normal low pressure of, for example, 50 mTorr or less. In the conventional plasma processing apparatus, the pressure at which the plasma is ignited is below -17-200908817 50 mT 〇rr, and the electric paddle does not ignite due to the low pressure. Therefore, when the electric prize is ignited, the pressure in the setting processing container is slightly increased, and the pressure is lowered after the plasma is ignited. In the case of the present embodiment, the illuminating recess 64' is provided on the lower surface side of the central portion (microwave introducing portion) of the dielectric plate 62 constituting the top plate member 58 as described above, thereby generating electric field concentration in the portion. Even if the pressure in the processing vessel 44 is a low pressure of 50 mTorr or less, the plasma can be ignited. Further, after the "plasma is ignited", the pressure in the processing vessel 44 (process pressure) can be maintained at 5 Torr or less to carry out the film forming treatment. In the present embodiment, even if the plasma is ignited, the electric field concentration is solved by the igniting recess 64, so that the plasma density of the igniting recess 64 does not excessively increase. For this reason, as described above, "once the plasma is generated in the processing space S, the surface wave plasma is generated, and the microwave is transmitted to the inside of the dielectric plate 62 in the radial direction while being reflected up and down" from the peripheral portion. The size of the recess for ignition is set such that the microwaves cancel each other out in the recess 64 for ignition due to the reflected wave. Further, in the present embodiment, since the projections 86, 88, and 90 having the tapered surfaces are provided in the central portion, the intermediate portion, and the peripheral portion of the dielectric plate 62, respectively, it is also disclosed in Japanese Laid-Open Patent Publication No. 2005-1. As explained in the 0093 publication, the resonance region can be formed regardless of the plasma condition. Therefore, for example, even if the process pressure changes, the plasma density can be increased and the plasma can be stably formed. Here, the relationship between the diameter D of the illuminating concave portion 64 and the plasma strength of the inner circumferential surface of the igniting concave portion 64 (more specifically, the corner portion of the concave portion and the bottom surface) when the plasma is ignited is evaluated. The results of this assessment are described in Figure 4 of -18- 200908817. In Fig. 4, A is a wavelength indicating the microwave of the dielectric plate 62. As can be understood from Fig. 4, when the diameter D is 3. λ / 8, an electric field is generated, and the electric field intensity is the largest, that is, the peak point of the electric field intensity. With this peak point as the center, the electric field strength drops sharply to the left and right. Further, at 2··/8 and 4·λ /8, the electric field strength drops to about 65% of the electric field strength at the peak 値. When the electric field concentration is more degraded than the electric field strength at this time, the plasma is not ignited at a low voltage of 5 OmTorr or less. Therefore, it can be understood that the upper limit of the diameter D of the illuminating recess 64 is 4. λ /8, and the lower limit is 2 · λ /8 ° Further, in the actual plasma processing, if there is no problem in the film quality, the plasma is also ignited. The pressure, the upper limit of the process pressure is about 2T 〇rr. In this way, on the side of the processing container 44 of the dielectric plate 62 of the top plate member 58, the illuminating recessed portion 6 4 for concentrating the electric field when the power supply slurry is ignited is provided, whereby the pressure in the processing container 44 is still lowered. Still able to maintain (lift) the ignitability of the plasma. Therefore, in a state where the pressure in the processing container 44 is high, film formation can be prevented, and the electrical properties of the insulating film or the like of the formed low dielectric constant material can be prevented from deteriorating. <Change in electric field strength due to simulation> Next, a change in the electric field intensity of the top plate member at the time of plasma ignition was obtained by simulation. Explain the simulation results. Fig. 5A is a schematic view showing the simulation results of the electric field strength (electric field distribution) of the conventional -19-200908817 plate member when the plasma is ignited and after the plasma is ignited. Fig. 5B is a schematic view showing the simulation results of the electric field strength (electric field distribution) of the top plate member of the present invention when the plasma is ignited and after the plasma is ignited. The conventional top member 8 shown in Fig. 5A has the same configuration as the top member described in Fig. 9. The material is aluminum nitride, and the diameter D of the concave portion formed on the upper surface of the central portion thereof is set to be about 30 mm in order to cancel the microwave transmitted therethrough and prevent the concentration of the electric field. On the other hand, the top plate member of the present invention shown in Fig. 5B has the same configuration as the above-described top plate member. The material is aluminum nitride, and the diameter D of the igniting recess 64 is set at 20 mm. Furthermore, the frequency of the microwave is simultaneously set at 2.4 5 GHz. As shown in Fig. 5A, in the conventional top plate member 8, when the plasma is ignited and the plasma is ignited, electric field concentration hardly occurs in the center portion of the top plate member, and the electric field distribution is relatively uniform. From this, it can be understood that the formed plasma is very stable. As shown in Fig. 5B, in the top plate member 5 of the present invention, it is understood that when the plasma is ignited, most of the electric field concentration occurs in the central igniting recess. 64 It is also understood that when the plasma is ignited and the plasma is stabilized, the electric field concentration of the ignition recess 64 is released, and the electric field distribution is relatively uniform. As described above, in the top plate member 58 of the present invention, it can be confirmed by the above-described simulation that the electric field concentration occurs in the ignition recess portion 64 only when the plasma is ignited, and the electric field concentration is released after ignition. -20- 200908817 <Verification of actual roof member> Next, the top plate member of the above-described simulation was actually fabricated to verify the presence or absence of plasma ignition. Explain the results. Fig. 6A is a table showing the results of the conventional top plate member for verifying the presence or absence of plasma ignition. Fig. 6B is a view showing the result of verifying the presence or absence of plasma igniting by the top member of the present invention. Here, the pressure at which the electric paddle in the processing container is ignited is varied in the range of 1 〇 to 200 mT 〇rr, and the power of the microwave is also varied in the range of 10 G0 to 30 00 watts. Further, argon gas is supplied as a gas for the electric paddle. In the figure, the “〇” mark indicates that plasma is ignited, and no mark (blank) indicates that the plasma cannot be ignited. As shown in Fig. 6A, in the case of the conventional top plate member, the pressure in the processing container is in the range of 80 to 200 mTorr, and the microwave power is in the range of 1 Torr to 3,000 watts, all of which may be plasma ignited. However, if the pressure is below 50 mTorr, no matter how the microwave power is changed within the above range, plasma ignition does not occur. On the other hand, as shown in Fig. 6B, in the case of the top member of the present invention, the pressure in the processing container is in the range of 80 to 200 mTorr, which is the same as the conventional top member of Fig. 6A, and the microwave power is 1 Torr. In the range of 〇〇~3 000 watts, all plasma igniting will occur. Moreover, although the pressure in the processing vessel is in the range of 10 to 50 mTorr, and the microwave power is in the range of 1000 to 1600 watts, plasma ignition does not occur, but the microwave power is in the range of 1800 to 3000 watts, and plasma ignition occurs. . -21 - 200908817 Generally, although microwaves are mostly used in the vicinity of 2,500 watts, in this case, by the top plate member of the present invention, even the low pressure of 10 to 50 mTorr in which the plasma is ignited by the conventional roof structure can be sufficiently ignited. . <Second Embodiment> In the first embodiment, the top plate member 58 has projections 86' 88 and 90 below. It is possible to provide only one or two kinds of protrusions of the three kinds of protrusions, or to provide a recess for lighting on the lower surface of the top plate member where the protrusions are not provided. Figure 7 is a second cross-sectional view showing the top member of the present invention. Here, the recessed portion 64 for ignition is provided on the lower surface of the center portion of the flat (planar) top plate member. In the case of the second embodiment of the diameter "depth" of the recessed portion 64 of the present embodiment, the electric field distribution is substantially lower than that of the first embodiment. However, even if the plasma is ignited at a temperature of about 10 to 50 mTorr, the effect of the first embodiment can be exhibited. In the above description of the embodiments, the plasma processing apparatus for the antenna member 68 is described as an example of the microwave introducing means 66. However, the present invention is not limited thereto. For example, the present invention is also applicable to a so-called slit formed directly on a circular waveguide surface, and a waveguide having the slit is directly disposed on the upper surface of the member. Slurry treatment unit. It is confirmed that the electric parts are not available, and the flat shape of the setting 58 is the same as that of the ignition. The uniformity, the low-pressure form is the same as the plane of the lower top plate of the -4097 tube. -22- 200908817 In the above description, although the plasma film forming process is used as the plasma treatment as an example, but The present invention can be applied to plasma treatment such as plasma uranium engraving treatment, plasma ashing treatment, plasma cooling treatment, and the like. Further, although argon gas is used as the plasma gas as an example, the gas is not limited thereto, and other inert gases such as He or Ne may be used, and it is not limited to an inert gas, and if it is dissociated by plasma (for example, C4F8) In addition, although a semiconductor wafer is used as a to-be-processed object as an example, it is not limited to this, and this invention is also applicable to a glass substrate. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic structural view showing a first embodiment of a plasma processing apparatus according to the present invention. Fig. 2 is a view showing a circuit processing apparatus of the first embodiment. Fig. 3 is a plan view showing the lower surface of the top plate member of Fig. 2. Fig. 4 is a view showing the diameter of the recessed portion for ignition of the top plate member and the recess for ignition such as plasma ignition. A graph showing the relationship between the electric field strength of the inner peripheral surface. Fig. 5A is a schematic view showing the simulation results of the electric field strength of the conventional top plate member when the plasma is ignited and after the plasma is ignited. Fig. 5B is a diagram showing electricity. Slurry point A schematic diagram of the simulation results of the electric field strength of the top plate member of the present invention after ignition and plasma ignition. -23- 200908817 Fig. 6A is a diagram showing the results of the conventional top plate member, verifying the presence or absence of the electric prize. Figure 6B is a table showing the result of verifying that the (sentence/no) plasma is ignited by the top member of the present invention. No. 7 is a second representation of the top member of the present invention. Fig. 8 is a schematic cross-sectional view showing an example of a conventional plasma processing apparatus. Fig. 9 is an enlarged cross-sectional view showing a top plate member of the plasma processing apparatus of Fig. 8. DESCRIPTION OF SYMBOLS S: Processing space 42 · Plasma processing apparatus 4 4 : Processing container 46 : Mounting table 47 : Support 48 : Gas introduction means 4 8 a : Plasma gas supply nozzle 48b : Process gas supply nozzle 50 : Opening 5 2: Gate valve 5 4 : Exhaust port 5 6 : Exhaust line -24 - 200908817 5 8 : Top plate structure 6 〇: Sealing structure 62 : Dielectric 64 : Ignition 64a : Side 66 : Microwave guide 68 : Plane day 70: late wave structure 72: waveguide box 74: coaxial guide 74a: Outer tube 7 4b : internal _ 76 : mode change 7 8 : rectangular guide 8 0 : matching electric 8 2 : microwave production 84 : slit 86 , 88 , 90 86a , 88a , 94 : vertical square 9 6 : control hand 9 8 : Memory medium W: Wafer D: Diameter piece plate recessed part means wire member wave tube f body converter wave line generator (microwave generation means): protrusion 90a: cone face (gravity direction) segment body -25 -